CN107910423A - A kind of high-color development LED quartz wafer, quartz wafer stent and crystal filament and preparation method thereof - Google Patents
A kind of high-color development LED quartz wafer, quartz wafer stent and crystal filament and preparation method thereof Download PDFInfo
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- CN107910423A CN107910423A CN201711090420.3A CN201711090420A CN107910423A CN 107910423 A CN107910423 A CN 107910423A CN 201711090420 A CN201711090420 A CN 201711090420A CN 107910423 A CN107910423 A CN 107910423A
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- quartz wafer
- quartz
- stent
- wafer
- led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention discloses a kind of high-color development LED quartz wafer, quartz wafer material is synthetic quartz, and the synthetic quartz is using transparency not less than 90%, weight in 5~100g, SiO2Hybrid particles of the component not less than 99.9% cultivate seed crystal 12~16 days, 16~17MPa of synthesis pressure in autoclave, 430~470 °C of temperature；Then 1700 °~1800 °C are heated to by long crystal furnace, so as to crystalline forming when holding 2~3 is small, then cooling annealing of successively decreasing forms complete crystal block；0.01~0.03g graphenes are plated by vapor deposition method.The present invention not only instead of traditional incandescent lamp and energy-saving lamp, greatlys save energy consumption, reduces use cost；The light percent of pass of LED is also improved at the same time, realizes 360 degree of well-balanced all-round luminous lightings of LED colour temperatures.
Description
Technical field
The present invention relates to field of LED illumination, more particularly to a kind of high-color development LED quartz wafer, quartz wafer stent and water
Brilliant filament and preparation method thereof.
Background technology
LED as a kind of solid-state semiconductor lighting engineering, with long lifespan, it is pollution-free, light efficiency is high the features such as just progressively substitute
Incandescent lamp and fluorescent light, the LED chip in LED lamp are installed in the substrate for carrying LED chip, and substrate is used for
Connection and heat dissipation.The material of LED substrate at present more uses Metal Substrate, resin base or ceramic base.The LED substrate of above-mentioned material
All each there is defect in dilatancy, stability, thermal conductivity, operability and cost.
LED filament in LED lamp is then mutually spliced by a plurality of LED filament to be formed.At present, LED filament generally use
The non-transparent substrate such as metal substrate, can only single side printing opacity, which greatly limits the illumination effect of LED light.
The content of the invention
Present invention aims to solve the deficiencies of the prior art, and provides a kind of a kind of high-color development LED quartz wafer, quartz wafer branch
Frame and crystal filament and preparation method thereof.
The technical solution adopted by the present invention is：A kind of high-color development LED quartz wafer, quartz wafer material are synthetic quartz,
The synthetic quartz is using transparency not less than 90%, weight in 5~100g, SiO2Hybrid particles of the component not less than 99.9% exist
Seed crystal 12~16 days, 16~17MPa of synthesis pressure, 430~470 °C of temperature are cultivated in cryogenic high pressure kettle；Then long crystal furnace is passed through
1700 °~1800 °C are heated to, so as to crystalline forming when holding 2~3 is small, then cooling annealing of successively decreasing forms complete crystal block；Pass through
Vapor deposition method plates 0.01~0.03g graphenes；The vapor deposition method for be heated in vacuum growth furnace 1700 °~
1800 °C, it is ensured that the uniform cladding in synthetic quartz surface, so as to allow uniformly to plate graphene with one or more form of single sheet.
A kind of high-color development LED quartz wafer stent, includes the quartz wafer and sheet iron strip of synthetic quartz material, the crystal base
Plate is connected with sheet iron strip by rivet punching press, nickel plating on the sheet iron strip.
A kind of high-color development LED crystal filament, includes the quartz wafer stent of synthetic quartz material, the quartz wafer stent
35~40mm, wide 0.5~1.0mm, 0.3~0.5mm of thickness are grown, is packaged with 24~30 be serially connected on the quartz wafer stent
LED chip.
A kind of production method of high-color development LED quartz wafer, includes the following steps：Step 1: the making of synthetic quartz, is adopted
With transparency not less than 90%, weight in 5~100g, SiO2Hybrid particles of the component not less than 99.9% are trained in cryogenic high pressure kettle
Educate seed crystal 12~16 days, 16~17MPa of synthesis pressure, 430~470 °C of temperature；Then by long crystal furnace be heated to 1700 °~
1800 °C, so as to crystalline forming when holding 2~3 is small, then cooling annealing of successively decreasing forms complete crystal block；Plated by vapor deposition method
0.01~0.03g graphenes；The vapor deposition method is that 1700 °~1800 °C are heated in vacuum growth furnace, it is ensured that artificial
The uniform cladding of crystal surface, so as to allow uniformly to plate graphene with one or more form of single sheet；Step 2: quartz plate adds
Work, carries out crystal block sawing sheet by the synthetic quartz made, then carries out chip cutting, the wafer surface of well cutting is ground
Processing, then carries out surface polishing, so that wafer surface light transmittance is up to more than 95%；Step 3: cutting, passes through laser point
Cut 40~80mm of chip cut growth, wide 0.5~1.0mm, the silver of 0.1~0.5mm of thickness.
A kind of production method of high-color development LED quartz wafer stent, includes the following steps：Step 1: the system of quartz wafer
Make；Step 2: functional areas process, nickel plating is carried out on sheet iron strip, 40 silver layers advanced in years form functional areas in leads plated；Step 3: water
Brilliant substrate holder processing, carries out rivet punching press by quartz wafer and sheet iron strip by positioning, then carries out braid；Step 4: it will compile
Cut, cleaned and packed with good product.
A kind of production method of high-color development LED crystal filament, includes the following steps：Step 1: quartz wafer makes；Step
2nd, quartz wafer stent makes, and etches efficient circuit；Step 3: encapsulation, quartz wafer stent is fixed on by LED chip series connection
On, then carry out the fluorescent glue encapsulation of mould top.
The beneficial effect that the present invention uses is：The present invention not only instead of traditional incandescent lamp and energy-saving lamp, greatly save
Energy consumption, reduces use cost；The light percent of pass of LED is also improved at the same time, realizes 360 degree of well-balanced all-round hairs of LED colour temperatures
Optical illumination.
Embodiment
With reference to embodiment, the present invention is described further.
A kind of high-color development LED quartz wafer, quartz wafer material are synthetic quartz, and the synthetic quartz uses transparency not
Less than 90%, weight in 5~100g, SiO2Component not less than 99.9% hybrid particles cultivated in cryogenic high pressure kettle seed crystal 12~
16 days, 16~17MPa of synthesis pressure, 430~470 °C of temperature；Then 1700 °~1800 °C are heated to by long crystal furnace, keep 2
~3 it is small when so as to crystalline forming, then cooling annealing of successively decreasing forms complete crystal block；0.01~0.03g is plated by vapor deposition method
Graphene；The vapor deposition method is that 1700 °~1800 °C are heated in vacuum growth furnace, it is ensured that synthetic quartz surface is uniform
Cladding, so as to allow uniformly to plate graphene with one or more form of single sheet.By tungsten heating rod, by 5 ° per minute of speed
Degree is heated to 1700 °~1800 °, and crystalline forming when stop 2~3 is small, then cooling of successively decreasing are annealed, and form complete crystal block.Treat complete
After crystal block is formed, 0.01~0.03g graphenes are plated by vapor deposition method；The vapor deposition method is in vacuum growth furnace
It is heated to 1700 °~1800 °C, it is ensured that the uniform cladding in synthetic quartz surface, so as to allow uniform with one or more form of single sheet
Plate graphene.After plating graphene, the thermal conductivity and intensity of synthetic quartz are greatly enhanced.
A kind of high-color development LED quartz wafer stent includes the quartz wafer and sheet iron strip of synthetic quartz material, the crystal base
Plate is connected with sheet iron strip by rivet punching press, nickel plating on the sheet iron strip.Quartz wafer material, quartz wafer are made using synthetic quartz
For the quartz wafer described in claim 1.The synthetic quartz high heat conductance and high intensity for being coated with graphene are given full play to, so as to adjust
High overall performance, substitutes the sapphire of high price and the ceramic substrate of brightness defect, realizes that heat-conducting effect is more preferable, luminous flux is well-balanced
360 degree it is all-round shine.
A kind of high-color development LED crystal filament, includes the quartz wafer stent of synthetic quartz material, the quartz wafer stent
35~40mm, wide 0.5~1.0mm, 0.3~0.5mm of thickness are grown, is packaged with 24~30 be serially connected on the quartz wafer stent
LED chip.Quartz wafer stent is the quartz wafer stent described in claim 2.
A kind of production method of high-color development LED quartz wafer, includes the following steps：
Step 1: the making of synthetic quartz, using transparency not less than 90%, weight in 5~100g, SiO2Component is not less than
99.9% hybrid particles cultivate seed crystal 12~16 days, 16~17MPa of synthesis pressure, 430~470 ° of temperature in cryogenic high pressure kettle
C；Then 1700 °~1800 °C are heated to by long crystal furnace, so as to crystalline forming when holding 2~3 is small, then cooling annealing shape of successively decreasing
Into complete crystal block；0.01~0.03g graphenes are plated by vapor deposition method；The vapor deposition method is in vacuum growth furnace
It is heated to 1700 °~1800 °C, it is ensured that the uniform cladding in synthetic quartz surface, so as to allow uniform with one or more form of single sheet
Plate graphene；
Step 2: quartz plate is processed, the synthetic quartz made is subjected to crystal block sawing sheet, chip cutting is then carried out, will cut
Good wafer surface is ground processing, then progress surface polishing, so that wafer surface light transmittance is up to more than 95%；
Step 3: cutting, by laser separation by 40~80mm of chip cut growth, wide 0.5~1.0mm, 0.1~0.5mm of thickness
Silver, plus-minus tolerance 0.02mm.
A kind of production method of high-color development LED quartz wafer stent, includes the following steps：
Step 1: the making of quartz wafer；
Step 2: functional areas process, nickel plating is carried out on sheet iron strip, 40 silver layers advanced in years form functional areas in leads plated；
Step 3: quartz wafer stent is processed, quartz wafer and sheet iron strip are carried out by rivet punching press by positioning, then compiled
Band；
Step 4: the good product of braid is cut, cleaned and packed.
A kind of production method of high-color development LED crystal filament, includes the following steps：
Step 1: quartz wafer makes；
Step 2: quartz wafer stent makes, efficient circuit is etched；
Step 3: encapsulation, LED chip series connection is fixed on quartz wafer stent, then carry out the fluorescent glue encapsulation of mould top.
Embodiment 1, the first step：Synthetic quartz makes.It is 92%, weight in 20g, SiO to use transparency2Component 99.96%
Hybrid particles seed crystal is cultivated in autoclave 14 days, synthesis pressure 16.5MPa, 450 °C of temperature；Then heated by long crystal furnace
To 1800 °C, so as to crystalline forming when holding 2 is small, then cooling annealing of successively decreasing forms complete crystal block；Plated by vapor deposition method
0.02g graphenes；The vapor deposition method is that 1800 °C are heated in vacuum growth furnace, it is ensured that synthetic quartz surface is uniformly multiple
Layer, so as to allow uniformly to plate graphene with one or more form of single sheet.
Second step：Quartz wafer is processed.Artificial crystals material is chosen, is cut by crystal block sawing sheet-chip --- chip table
--- --- surface polishing --- laser separation --- detects face milled processed, is fabricated to the wall scroll water of 30*0.8*0.4mm for external form processing
Brilliant substrate achieves surface light transmittance more than 95%.
3rd step：Crystal stent is processed.Nickel plating is carried out on sheet iron strip, 40 step silver layer formation functional areas in leads plated, pass through
By quartz wafer and sheet iron strip progress rivet punching press, --- --- cutting --- cleaning --- packaging, completes quartz wafer stent for braid for positioning
Manufacturing process.The structure of different numbers of rows is formed, solid and reliable quartz wafer stent, can bear die bond, encapsulation, height when envelope is steeped
Temperature and do not fall off.
4th step：Encapsulation.The LED chip series connection of 28 0.02W is fixed on long 38mm, wide 0.8mm, the water of thick 0.4mm
On brilliant stent, then the fluorescent glue encapsulation of mould top is carried out to realize.Driven in 12mA electric currents, voltage 70V, power 0.82W, light lead to
160lm/W can be reached for 127lm, light efficiency by measuring, if collocation red chip, colour rendering index can reach more than 100, have
The photoelectric properties of color.The LED illumination lamp similar to incandescent lamp form can also be produced with it, while also solves traditional ball bubble
The problems such as lamp power consumption is big, and service life is short, environmental pollution.
Test is lighted by what the filament processed carried out 100,000 hours, it, which radiates, stablizes, and reduces light decay.
5th step：Envelope bubble.
1）, driving power is put into Mao Pao upper ends, the heater lead of hair bubble passes through the outlet terminal of power supply（Pay attention to positive and negative
There is positive and negative anodes mark at pole, the back side of power panel）.
2）, hair bubble lead is welded to and connects the positive and negative of driving power（+、-）Terminals, cut filament anode lead；Retain
Negative terminal lead, is welded to lamp cap outer wall, when exchange N lines use.
3）, do insulation processing（Heat-shrinkable T bush fills insulating cement）, then it is inserted in lamp cap and completes welding, forms whole lamp.
The present invention not only instead of traditional incandescent lamp and energy-saving lamp, greatlys save energy consumption, reduces use cost；Together
When also improve the light percent of pass of LED, realize 360 degree of well-balanced all-round luminous lightings of LED colour temperatures.
Those skilled in the art, can also be it is to be understood that the protection scheme of the present invention is not limited only to the above embodiments
Various permutation and combination and conversion are carried out on the basis of above-described embodiment, on the premise of without prejudice to spirit of the invention, to the present invention
The various conversion carried out are all fallen within protection scope of the present invention.
Claims (6)
1. a kind of high-color development LED quartz wafer, it is characterized in that quartz wafer material is synthetic quartz, the synthetic quartz is using saturating
Lightness is not less than 90%, weight in 5~100g, SiO2Hybrid particles of the component not less than 99.9% cultivate seed in cryogenic high pressure kettle
It is 12~16 days, 16~17MPa of synthesis pressure brilliant, 430~470 °C of temperature；Then 1700 °~1800 ° are heated to by long crystal furnace
C, so as to crystalline forming when holding 2~3 is small, then cooling annealing of successively decreasing forms complete crystal block；0.01 is plated by vapor deposition method
~0.03g graphenes；The vapor deposition method is that 1700 °~1800 °C are heated in vacuum growth furnace, it is ensured that synthetic quartz
The uniform cladding in surface, so as to allow uniformly to plate graphene with one or more form of single sheet.
A kind of 2. quartz wafer stent made using high-color development LED quartz wafer as claimed in claim 1, it is characterized in that bag
The quartz wafer and sheet iron strip of synthetic quartz material are included, the quartz wafer is connected with sheet iron strip by rivet punching press, on the sheet iron strip
Nickel plating.
A kind of 3. crystal filament made using high-color development LED quartz wafer as claimed in claim 1, it is characterized in that including people
Make the quartz wafer stent of crystal material, the quartz wafer stent grows 35~40mm, wide 0.5~1.0mm, thickness 0.3~
0.5mm, is packaged with 24~30 LED chips being serially connected on the quartz wafer stent.
A kind of 4. production method for making high-color development LED quartz wafer as claimed in claim 1, it is characterized in that including following step
Suddenly：
Step 1: the making of synthetic quartz, using transparency not less than 90%, weight in 5~100g, SiO2Component is not less than
99.9% hybrid particles cultivate seed crystal 12~16 days, 16~17MPa of synthesis pressure, 430~470 ° of temperature in cryogenic high pressure kettle
C；Then 1700 °~1800 °C are heated to by long crystal furnace, so as to crystalline forming when holding 2~3 is small, then cooling annealing shape of successively decreasing
Into complete crystal block；0.01~0.03g graphenes are plated by vapor deposition method；The vapor deposition method is in vacuum growth furnace
It is heated to 1700 °~1800 °C, it is ensured that the uniform cladding in synthetic quartz surface, so as to allow uniform with one or more form of single sheet
Plate graphene；
Step 2: quartz plate is processed, the synthetic quartz made is subjected to crystal block sawing sheet, chip cutting is then carried out, will cut
Good wafer surface is ground processing, then progress surface polishing, so that wafer surface light transmittance is up to more than 95%；
Step 3: cutting, by laser separation by 40~80mm of chip cut growth, wide 0.5~1.0mm, 0.1~0.5mm of thickness
Silver.
A kind of 5. production method for making high-color development LED quartz wafer stent as claimed in claim 2, it is characterized in that including such as
Lower step：
Step 1: the making of quartz wafer；
Step 2: functional areas process, nickel plating is carried out on sheet iron strip, 40 silver layers advanced in years form functional areas in leads plated；
Step 3: quartz wafer stent is processed, quartz wafer and sheet iron strip are carried out by rivet punching press by positioning, then compiled
Band；
Step 4: the good product of braid is cut, cleaned and packed.
A kind of 6. production method for manufacturing high-color development LED crystal filament as claimed in claim 3, it is characterized in that including following step
Suddenly：
Step 1: quartz wafer makes；
Step 2: quartz wafer stent makes, efficient circuit is etched；
Step 3: encapsulation, LED chip series connection is fixed on quartz wafer stent, then carry out the fluorescent glue encapsulation of mould top.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711090420.3A CN107910423A (en) | 2017-11-08 | 2017-11-08 | A kind of high-color development LED quartz wafer, quartz wafer stent and crystal filament and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711090420.3A CN107910423A (en) | 2017-11-08 | 2017-11-08 | A kind of high-color development LED quartz wafer, quartz wafer stent and crystal filament and preparation method thereof |
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| Publication Number | Publication Date |
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| CN107910423A true CN107910423A (en) | 2018-04-13 |
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| CN203850340U (en) * | 2014-05-04 | 2014-09-24 | 泉州市金太阳照明科技有限公司 | LED structure |
| CN104393128A (en) * | 2014-11-19 | 2015-03-04 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial structure with SiC substrate and preparation method of nitride LED epitaxial structur |
| CN104409594A (en) * | 2014-11-20 | 2015-03-11 | 北京中科天顺信息技术有限公司 | SiC substrate-based nitride LED (Light Emitting Diode) film flip chip and preparation method thereof |
| CN104538526A (en) * | 2014-12-24 | 2015-04-22 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial wafer structure based on copper substrate and manufacturing method thereof |
| CN106783822A (en) * | 2016-12-28 | 2017-05-31 | 铜陵市同芯电子科技有限公司 | A kind of high-color development LED quartz wafer filament |
-
2017
- 2017-11-08 CN CN201711090420.3A patent/CN107910423A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203850340U (en) * | 2014-05-04 | 2014-09-24 | 泉州市金太阳照明科技有限公司 | LED structure |
| CN104393128A (en) * | 2014-11-19 | 2015-03-04 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial structure with SiC substrate and preparation method of nitride LED epitaxial structur |
| CN104409594A (en) * | 2014-11-20 | 2015-03-11 | 北京中科天顺信息技术有限公司 | SiC substrate-based nitride LED (Light Emitting Diode) film flip chip and preparation method thereof |
| CN104538526A (en) * | 2014-12-24 | 2015-04-22 | 北京中科天顺信息技术有限公司 | Nitride LED epitaxial wafer structure based on copper substrate and manufacturing method thereof |
| CN106783822A (en) * | 2016-12-28 | 2017-05-31 | 铜陵市同芯电子科技有限公司 | A kind of high-color development LED quartz wafer filament |
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