CN103296187A - Packaging structure for LED alternating-current driving high-voltage chip - Google Patents
Packaging structure for LED alternating-current driving high-voltage chip Download PDFInfo
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- CN103296187A CN103296187A CN2013102224750A CN201310222475A CN103296187A CN 103296187 A CN103296187 A CN 103296187A CN 2013102224750 A CN2013102224750 A CN 2013102224750A CN 201310222475 A CN201310222475 A CN 201310222475A CN 103296187 A CN103296187 A CN 103296187A
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Abstract
The invention discloses a packaging structure of an LED alternating-current driving high-voltage chip. The packaging structure comprises a rectangular chip body, a plurality of ultrahigh-voltage pins, a plurality of high-voltage pins and a plurality of low-voltage pins are arranged on the back of the chip body, pitches among the ultrahigh-voltage pins, among the high-voltage pins, among the ultrahigh-voltage pins and radiating fins and among the high-voltage pins and the radiating fins are larger than pitches among the low-voltage pins, namely that the pitches among the ultrahigh-voltage pins, among the high-voltage pins, among the ultrahigh-voltage pins and radiating fins and among the high-voltage pins and the radiating fins are large, so that the chip can meet requirements on voltage withstanding and safety. The radiating fins are attached on a substrate on the back of the chip body, so that the chip can quickly radiate via the radiating fins, and radiating efficiency and radiating effect are improved.
Description
Technical field
The present invention relates to the chip encapsulation technology field, relate in particular to a kind of encapsulating structure that drives the high pressure chip that exchanges for LED.
Background technology
LED(Light Emitting Diode, light-emitting diode) is to adopt semi-conducting material as the light source of new generation of electrical-optical transfer medium, has characteristics such as energy-saving and environmental protection, the life-span is long, volume is little, will become the main flow illumination substituting electricity-saving lamp soon.Along with global incandescent lamp cut-off taboo pin policy is implemented in regular turn, the LED lighting will be in the face of replacing the opportunity of incandescent lamp, and market scale is up to hundreds billion of.
Generally be applied in the LED drive system in the LED lighting, the common use LED driving chip that needs drives LED, and existing LED driving chip mostly is the low pressure chip design greatly, and this low-voltage driving chip resistance to pressure is poor, radiating effect is bad.Because it is that high pressure directly drives that LED exchange to drive, if prolong in the time of to cause different design to close safety requirement, particularly pin greater than 8 with general package design, be difficult to satisfy safety and the requirement of dispelling the heat, the encapsulation that is not complementary especially.
Summary of the invention
The objective of the invention is to provides a kind of LED that is used for that can satisfy high withstand voltage, high heat radiation, many pins and safety requirement to exchange the encapsulating structure that drives the high pressure chip at the deficiencies in the prior art.
To achieve these goals, the invention provides a kind of encapsulating structure that drives the high pressure chip that exchanges for LED, it comprises rectangular chip body, the back side of chip body is provided with a plurality of superhigh pressure pins, a plurality of high pressure pins, a plurality of low pressure pins, the superhigh pressure pin is arranged at the top at the chip body back side, the high pressure pin is arranged at the left side and the right at the chip body back side, the low pressure pin is arranged at the bottom at the chip body back side, the spacing between the superhigh pressure pin, spacing between the high pressure pin, spacing between superhigh pressure pin and the fin, spacing between high pressure pin and the fin is all greater than the spacing between the low pressure pin; The substrate at the back side of chip body is fitted with fin.
Preferably, the spacing between the described superhigh pressure pin is 1.5mm, and the spacing between superhigh pressure pin and the fin is 1.5mm.
Preferably, the spacing between the described high pressure pin is 1.5mm, and the spacing between high pressure pin and the fin is 1.25mm.
Preferably, described chip body adopts the QFN encapsulation.
Beneficial effect of the present invention is: the present invention is used for LED and exchanges the encapsulating structure that drives the high pressure chip, it comprises rectangular chip body, the back side of chip body is provided with a plurality of superhigh pressure pins, a plurality of high pressure pins, a plurality of low pressure pins, the superhigh pressure pin is arranged at the top at the chip body back side, the high pressure pin is arranged at the left side and the right at the chip body back side, the low pressure pin is arranged at the bottom at the chip body back side, spacing between the superhigh pressure pin, spacing between the high pressure pin, spacing between superhigh pressure pin and the fin, spacing between high pressure pin and the fin is all greater than the spacing between the low pressure pin, it is the spacing between the superhigh pressure pin, spacing between the high pressure pin, spacing between superhigh pressure pin and the fin, spacing between high pressure pin and the fin is all bigger, thereby makes chip of the present invention satisfy withstand voltage and the safety requirement; The substrate at the back side of chip body is fitted with fin, makes chip of the present invention can pass through the fin quick heat radiating, improves radiating efficiency, improves radiating effect.
Description of drawings
Fig. 1 is vertical view of the present invention.
Fig. 2 is upward view of the present invention.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.
Please refer to Fig. 1 and Fig. 2, the present invention is used for LED and exchanges the encapsulating structure that drives the high pressure chip, it comprises rectangular chip body 1, it is PIN that the back side of chip body 1 is provided with a plurality of superhigh pressure pin 2(), a plurality of high pressure pins 3, a plurality of low pressure pins 4, superhigh pressure pin 2 is arranged at the top at chip body 1 back side, high pressure pin 3 is arranged at the left side and the right at chip body 1 back side, low pressure pin 4 is arranged at the bottom at chip body 1 back side, spacing between the superhigh pressure pin 2, spacing between the high pressure pin 3, spacing between superhigh pressure pin 2 and the fin 5, spacing between high pressure pin 3 and the fin 5 is all greater than the spacing between the low pressure pin 4, it is the spacing between the superhigh pressure pin 2, spacing between the high pressure pin 3, spacing between superhigh pressure pin 2 and the fin 5, spacing between high pressure pin 3 and the fin 5 is all bigger, wherein, spacing between the low pressure pin 4 is the pin design of conventional low pressure, for example: the spacing e between the low pressure pin 4 is 0.65mm or 0.5mm, thereby makes chip of the present invention satisfy withstand voltage and the safety requirement; The substrate at the back side of chip body 1 is fitted with fin 5, and fin 5 can be fitted in the substrate at the back side of chip body 1 by modes such as heat conductive silica gels, makes chip of the present invention can pass through fin 5 quick heat radiatings, improves radiating efficiency, improves radiating effect.
More particularly, spacing between the superhigh pressure pin 2 of the present invention (is pitch, be the spacing between the central point of two pins) e1 is the 1.5mm(millimeter), the spacing k1 between superhigh pressure pin 2 and the fin 5 is 1.5mm, can satisfy the 500V(volt) withstand voltage safety requirement; Spacing e2 between the high pressure pin 3 is 1.5mm, and the spacing k2 between high pressure pin 3 and the fin 5 is 1.25mm, can satisfy the withstand voltage safety requirement of 400V; And the spacing between the low pressure pin 4 is the pin design of conventional low pressure, can satisfy the needs of the various function PAD of chip of the present invention, for example: the low pressure PAD that can connect chip; Wherein, chip body 1 adopts QFN(Quad Flat No-lead, quad flat non-pin) encapsulation, QFN is encapsulated as one of surface attaching type encapsulation, is also referred to as LCC.
Control device-first according to the GB19510.1-2009 lamp: generally require and safety requirements, be equal to international standard IEC61347-1-2007, it requires pin minimum spacing 1.25mm when crest voltage 400V; Require pin minimum spacing 0.5mm during crest voltage 100V.Therefore, superhigh pressure pin 2 of the present invention, high pressure pin 3, low pressure pin 4 all meet above requirement, reach the safety requirement.
Should be noted that at last; above embodiment is only in order to illustrate technical scheme of the present invention; but not limiting the scope of the invention; although with reference to preferred embodiment the present invention has been done to explain; those of ordinary skill in the art is to be understood that; can make amendment or be equal to replacement technical scheme of the present invention, and not break away from essence and the scope of technical solution of the present invention.
Claims (4)
1. one kind is used for the encapsulating structure that LED exchanges driving high pressure chip, it is characterized in that: comprise rectangular chip body, the back side of chip body is provided with a plurality of superhigh pressure pins, a plurality of high pressure pins, a plurality of low pressure pins, the superhigh pressure pin is arranged at the top at the chip body back side, the high pressure pin is arranged at the left side and the right at the chip body back side, the low pressure pin is arranged at the bottom at the chip body back side, the spacing between the superhigh pressure pin, spacing between the high pressure pin, spacing between superhigh pressure pin and the fin, spacing between high pressure pin and the fin is all greater than the spacing between the low pressure pin; The substrate at the back side of chip body is fitted with fin.
2. according to claim 1ly exchange to drive the encapsulating structure of high pressure chip for LED, it is characterized in that: the spacing between the described superhigh pressure pin is 1.5mm, and the spacing between superhigh pressure pin and the fin is 1.5mm.
3. according to claim 1ly exchange to drive the encapsulating structure of high pressure chip for LED, it is characterized in that: the spacing between the described high pressure pin is 1.5mm, and the spacing between high pressure pin and the fin is 1.25mm.
4. according to any described encapsulating structure for LED interchange driving high pressure chip of claim 1-3, it is characterized in that: described chip body adopts the QFN encapsulation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310222475.0A CN103296187B (en) | 2013-06-06 | 2013-06-06 | A kind of encapsulating structure driving high-voltage chip for LED alternating-current |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310222475.0A CN103296187B (en) | 2013-06-06 | 2013-06-06 | A kind of encapsulating structure driving high-voltage chip for LED alternating-current |
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| Publication Number | Publication Date |
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| CN103296187A true CN103296187A (en) | 2013-09-11 |
| CN103296187B CN103296187B (en) | 2016-01-20 |
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| CN201310222475.0A Active CN103296187B (en) | 2013-06-06 | 2013-06-06 | A kind of encapsulating structure driving high-voltage chip for LED alternating-current |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681517A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | Multi-chip QFN (Quad Flat No Lead) package suitable for LED (Light Emitting Diode) illuminating application |
| CN104779234A (en) * | 2014-01-10 | 2015-07-15 | 万国半导体股份有限公司 | Semiconductor device for inhibiting creepage phenomenon and preparation method thereof |
| TWI623079B (en) * | 2017-03-21 | 2018-05-01 | 笙泉科技股份有限公司 | Circuit Package |
| CN108666290A (en) * | 2017-03-27 | 2018-10-16 | 笙泉科技股份有限公司 | Circuit package |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030201462A1 (en) * | 2001-05-15 | 2003-10-30 | Richard Pommer | Small-scale optoelectronic package |
| CN101330070A (en) * | 2008-05-04 | 2008-12-24 | 北京巨数数字技术开发有限公司 | Drive chip for LED |
| CN102931182A (en) * | 2012-11-12 | 2013-02-13 | 杭州士兰微电子股份有限公司 | Packaging device of compact single-phase integrated drive circuit and single-phase integrated drive circuit |
-
2013
- 2013-06-06 CN CN201310222475.0A patent/CN103296187B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030201462A1 (en) * | 2001-05-15 | 2003-10-30 | Richard Pommer | Small-scale optoelectronic package |
| CN101330070A (en) * | 2008-05-04 | 2008-12-24 | 北京巨数数字技术开发有限公司 | Drive chip for LED |
| CN102931182A (en) * | 2012-11-12 | 2013-02-13 | 杭州士兰微电子股份有限公司 | Packaging device of compact single-phase integrated drive circuit and single-phase integrated drive circuit |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681517A (en) * | 2013-12-03 | 2015-06-03 | 上海北京大学微电子研究院 | Multi-chip QFN (Quad Flat No Lead) package suitable for LED (Light Emitting Diode) illuminating application |
| CN104779234A (en) * | 2014-01-10 | 2015-07-15 | 万国半导体股份有限公司 | Semiconductor device for inhibiting creepage phenomenon and preparation method thereof |
| TWI623079B (en) * | 2017-03-21 | 2018-05-01 | 笙泉科技股份有限公司 | Circuit Package |
| CN108666290A (en) * | 2017-03-27 | 2018-10-16 | 笙泉科技股份有限公司 | Circuit package |
| CN108666290B (en) * | 2017-03-27 | 2020-04-28 | 笙泉科技股份有限公司 | Circuit packaging piece |
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| Publication number | Publication date |
|---|---|
| CN103296187B (en) | 2016-01-20 |
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Owner name: SHENZHEN BOYONG TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: DONGGUAN BOYONG TECHNOLOGY CO., LTD. Effective date: 20150604 |
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Effective date of registration: 20150604 Address after: 518054 Guangdong city of Shenzhen province Qianhai Shenzhen Hong Kong cooperation zone before Bay Road No. 1 building 201 room A (located in Shenzhen Qianhai business secretary Co. Ltd.) Applicant after: SHENZHEN BOYONG TECHNOLOGY CO., LTD. Address before: 523808 Guangdong province Dongguan City Songshan Lake Industrial Road, building 6 floor 2 Songhu branch Applicant before: Dongguan Boyong Electronic Technology Co., Ltd. |
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Effective date of registration: 20191030 Address after: 314100 east side of No.33, sanjibang, Huitong village, Huimin street, Jiashan County, Jiaxing City, Zhejiang Province Patentee after: Jiashan Lianrui Electronic Technology Co., Ltd Address before: 518054 Guangdong city of Shenzhen province Qianhai Shenzhen Hong Kong cooperation zone before Bay Road No. 1 building 201 room A (located in Shenzhen Qianhai business secretary Co. Ltd.) Patentee before: SHENZHEN BOYONG TECHNOLOGY CO., LTD. |