CN204885218U - High -power LED's of high density packaging structure - Google Patents
High -power LED's of high density packaging structure Download PDFInfo
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- CN204885218U CN204885218U CN201520452901.4U CN201520452901U CN204885218U CN 204885218 U CN204885218 U CN 204885218U CN 201520452901 U CN201520452901 U CN 201520452901U CN 204885218 U CN204885218 U CN 204885218U
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- encapsulation base
- led
- high density
- led chip
- power led
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Abstract
The utility model discloses a high -power LED's of high density packaging structure, including the encapsulation base, be equipped with insulating part on the lateral wall of encapsulation base, the top of encapsulation base is equipped with the LED chip and is used for the reflection piece of light beam. The utility model discloses LED chips much more more that can integrate on the terminal surface of encapsulation base, the heat that LED chip during operation produced can improve LED chip integration degree through the quick release of large tracts of land cooling surface of encapsulation base, has lengthened the life of LED chip, has improved unit area's luminous power.
Description
Technical field
The utility model relates to the encapsulating structure of LED, particularly relates to a kind of encapsulating structure of high density great power LED.
Background technology
In the commercial Application of high-power LED light source, day by day improve the power demand of LED, the LED power improving unit are is also a problem of LED industry now.Normal practice now in application be by one or many great power LED wafer package on the LED support of ceramics bracket or special material, then on support, the electrode of LED wafer is drawn, forms a LED that can be used for LED Application Engineer to use.The drawback of this way is the complex manufacturing technology of the LED support of this pottery or special material, can must be provided by the industry supplier of specialty, cost is relatively high, but more outstanding drawback is can not integrated more great power LED wafer on a LED support, also the luminous power of unit are can not just be improved, because the small volume of support, be subject to the restriction of its structure, its area of dissipation is limited, if the more great power LED wafer of enclosed inside, the amount of heat produced during great power LED work can not shed in time, result is the useful life that gently then can affect LED, heavy then whole LEDs can be burnt out.
Utility model content
Technical problem to be solved in the utility model is: the encapsulating structure providing a kind of high density great power LED, the heat produced during LED work can discharge fast, improve LED chip integrated level, extend the useful life of LED chip, improve the luminous power of unit are.
For solving the problems of the technologies described above, the utility model proposes a kind of encapsulating structure of high density great power LED, comprise encapsulation base, the sidewall of described encapsulation base is provided with insulating element, and the top of described encapsulation base is provided with LED chip and the reflecting element for reflection ray.
Further, described encapsulation base is encapsulation copper coin, and described insulating element is be arranged on the insulating resin plate on the sidewall of encapsulation copper coin both sides.
Further, described encapsulation copper coin be provided with at least one cooling oil duct, described insulating resin plate is provided with the Cooling Holes corresponding with cooling oil duct.
Further, described reflecting element is the reflecting plate upwards extended from the end face of encapsulation base.
Further, described LED chip is in the same side of reflecting plate.
Further, the cross section of described reflecting plate is trapezoidal shape.
Technique scheme at least has following beneficial effect: the utility model adopts and be provided with insulating element on the sidewall of encapsulation base, LED chip and the reflecting element for reflection ray is provided with at the top of encapsulation base, can integrated more LED chip on the end face of encapsulation base, the heat produced during LED chip work can be discharged fast by the large area radiating surface of encapsulation base, improve LED chip integrated level, extend the useful life of LED chip, improve the luminous power of unit are.
Accompanying drawing explanation
Fig. 1 is the structural representation of the encapsulating structure not tape insulation parts of the utility model high density great power LED.
Fig. 2 is the structural representation of insulating element in the encapsulating structure of the utility model high density great power LED.
Fig. 3 is the structural representation of the encapsulating structure of the utility model high density great power LED.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below in conjunction with accompanying drawing, the utility model is described further.
As shown in Figure 1, Figure 3, the encapsulating structure of the utility model high density great power LED, comprises encapsulation base 1, insulating element 2, LED chip 3 and reflecting element 4, wherein,
Encapsulation base 1 is encapsulation copper coin, and as shown in Figure 1, what encapsulate copper coin is provided with two each and every one cooling oil ducts 11.
Insulating element 2, for being arranged on the insulating resin plate on the sidewall of encapsulation copper coin both sides, as shown in Figure 2, insulating resin plate is provided with the Cooling Holes 21 corresponding with cooling oil duct 11.
LED chip 3 is arranged on the top of encapsulation base 1, and is positioned at the same side of reflecting plate.
Reflecting element 4 is for reflection ray, and the end face perpendicular to encapsulation base 1 is upwards extended, as shown in Figure 1, the cross section of reflecting plate is designed to trapezoidal shape, can expands the reflection angle of light like this.
The utility model adopts and be provided with insulating element 2 on the sidewall of encapsulation base 1, LED chip 3 and the reflecting element 4 for reflection ray is provided with at the top of encapsulation base 1, can integrated more LED chip 3 on the end face of encapsulation base 1, the heat produced when LED chip 3 works can be discharged fast by the large area radiating surface of encapsulation base 1, improve LED chip 3 integrated level, extend the useful life of LED chip 3, improve the luminous power of unit are.
The above is embodiment of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some amendments, these amendments are also considered as protection range of the present utility model.
Claims (6)
1. an encapsulating structure for high density great power LED, is characterized in that, comprises encapsulation base, and the sidewall of described encapsulation base is provided with insulating element, and the top of described encapsulation base is provided with LED chip and the reflecting element for reflection ray.
2. the encapsulating structure of high density great power LED as claimed in claim 1, is characterized in that, described encapsulation base is encapsulation copper coin, and described insulating element is be arranged on the insulating resin plate on the sidewall of encapsulation copper coin both sides.
3. the encapsulating structure of high density great power LED as claimed in claim 2, is characterized in that, described encapsulation copper coin be provided with at least one cooling oil duct, described insulating resin plate is provided with the Cooling Holes corresponding with cooling oil duct.
4. the encapsulating structure of high density great power LED as claimed in claim 1, it is characterized in that, described reflecting element is the reflecting plate upwards extended from the end face of encapsulation base.
5. the encapsulating structure of high density great power LED as claimed in claim 4, it is characterized in that, described LED chip is in the same side of reflecting plate.
6. the encapsulating structure of high density great power LED as claimed in claim 4, it is characterized in that, the cross section of described reflecting plate is trapezoidal shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201520452901.4U CN204885218U (en) | 2015-06-26 | 2015-06-26 | High -power LED's of high density packaging structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520452901.4U CN204885218U (en) | 2015-06-26 | 2015-06-26 | High -power LED's of high density packaging structure |
Publications (1)
Publication Number | Publication Date |
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CN204885218U true CN204885218U (en) | 2015-12-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201520452901.4U Active CN204885218U (en) | 2015-06-26 | 2015-06-26 | High -power LED's of high density packaging structure |
Country Status (1)
Country | Link |
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CN (1) | CN204885218U (en) |
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2015
- 2015-06-26 CN CN201520452901.4U patent/CN204885218U/en active Active
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant |