CN107394026A - A kind of LED with graphene heat-conducting layer - Google Patents
A kind of LED with graphene heat-conducting layer Download PDFInfo
- Publication number
- CN107394026A CN107394026A CN201610328817.0A CN201610328817A CN107394026A CN 107394026 A CN107394026 A CN 107394026A CN 201610328817 A CN201610328817 A CN 201610328817A CN 107394026 A CN107394026 A CN 107394026A
- Authority
- CN
- China
- Prior art keywords
- type
- semiconductor layers
- conducting layer
- led
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of LED with graphene heat-conducting layer, including lampshade, light-emitting device is installed inside the lampshade, light-emitting device is made up of N-type CaN semiconductor layers and p-type CaN semiconductor layers, the N-type CaN semiconductor layers lower surface is bonded with substrate, the substrate lower surface is provided with graphene layer, the N-type CaN semiconductor layers upper surface is provided with N-type electrode and luminescent layer, and there is gap between N-type electrode and luminescent layer, the p-type CaN semiconductor layers are located at the upper surface of luminescent layer, the p-type CaN semiconductor layers upper surface is provided with transparency conducting layer, the transparency conducting layer upper surface is provided with P-type electrode.
Description
Technical field
The present invention relates to electronic technology field field, specially a kind of LED with graphene heat-conducting layer.
Background technology
LED is a kind of simple in construction, small volume, the good lamp of illumination effect, but LED easily produces
Higher temperature, cause the life-span shorter.Graphene is a kind of is stripped out from graphite material, by carbon original
The two dimensional crystal of molecular only one layer of atomic thickness, it be have now been found that most thin, maximum intensity,
The most strong a kind of novel nano-material of heat conductivility, therefore, it is proposed that a kind of have graphene heat-conducting layer
LED.
The content of the invention
It is an object of the invention to provide a kind of LED with graphene heat-conducting layer, to solve the above-mentioned back of the body
The problem of being proposed in scape technology.
To achieve the above object, the present invention provides following technical scheme：It is a kind of with graphene heat-conducting layer
LED, including lampshade, light-emitting device is installed, light-emitting device is by N-type CaN half inside the lampshade
Conductor layer and p-type CaN semiconductor layers composition, the N-type CaN semiconductor layers lower surface are bonded with substrate,
The substrate lower surface is provided with graphene layer, and the N-type CaN semiconductor layers upper surface is provided with N-type electrode
And luminescent layer, and having gap between N-type electrode and luminescent layer, the p-type CaN semiconductor layers are positioned at hair
The upper surface of photosphere, the p-type CaN semiconductor layers upper surface are provided with transparency conducting layer, described transparent to lead
Electric layer upper surface is provided with P-type electrode.
Preferably, soldering is affixed leaded in the N-type electrode and P-type electrode, and the lead extends
Lampshade lower surface certain length.
Preferably, the lampshade is transparent material, and the substrate uses sapphire material.
Compared with prior art, the beneficial effects of the invention are as follows：This has the LED of graphene heat-conducting layer,
By setting graphene layer in substrate lower surface, because of its thinner thickness, overall structure is not influenceed, its
Distinctive high heat conduction characteristic can export amount of heat, increase the service life of LED.
Brief description of the drawings
Fig. 1 is schematic structural view of the invention.
In figure：1 lampshade, 2 transparency conducting layers, 3N types electrode, 4N type CaN semiconductor layers, 5 leads,
6 graphene layers, 7 substrates, 8 luminescent layers, 9P type CaN semiconductor layers, 10P type electrodes.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describing, it is clear that described embodiment is only part of the embodiment of the present invention, and
The embodiment being not all of.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
Go out under the premise of creative work the every other embodiment obtained, belong to the scope of protection of the invention.
Referring to Fig. 1, the present invention provides a kind of technical scheme：A kind of LED with graphene heat-conducting layer
Lamp, including lampshade 1, light-emitting device is installed inside the lampshade 1, light-emitting device is partly led by N-type CaN
Body layer 4 and p-type CaN semiconductor layers 9 are formed, and the lower surface of N-type CaN semiconductor layers 4 is bonded with
Substrate 7, the lower surface of substrate 7 are provided with graphene layer 6, the upper surface of N-type CaN semiconductor layers 4
Provided with N-type electrode 3 and luminescent layer 8, and there is gap between N-type electrode 3 and luminescent layer 8, the p-type
CaN semiconductor layers 9 are located at the upper surface of luminescent layer 8, and the upper surface of p-type CaN semiconductor layers 9 is provided with
Transparency conducting layer 2, the upper surface of transparency conducting layer 2 are provided with P-type electrode 10.
Soldering affixed leaded 5 in the N-type electrode 3 and P-type electrode 10, the lead 5 extends
The lower surface certain length of lampshade 1, the lampshade 1 are transparent material, and the substrate 7 uses sapphire material
Matter.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment,
And without departing from the spirit or essential characteristics of the present invention, can be real in other specific forms
The existing present invention.Therefore, no matter from the point of view of which point, embodiment all should be regarded as exemplary, and
It is nonrestrictive, the scope of the present invention is limited by appended claims rather than described above, therefore purport
Included by all changes fallen in the implication and scope of the equivalency of claim in the present invention.
Any reference in claim should not be considered as to the involved claim of limitation.
Claims (3)
1. a kind of LED with graphene heat-conducting layer, including lampshade (1), the lampshade (1) is interior
Portion is provided with light-emitting device, it is characterised in that：Light-emitting device is by N-type CaN semiconductor layers (4) and p-type
CaN semiconductor layers (9) form, and N-type CaN semiconductor layers (4) lower surface is bonded with substrate (7),
Substrate (7) lower surface is provided with graphene layer (6), N-type CaN semiconductor layers (4) upper table
Face is provided with N-type electrode (3) and luminescent layer (8), and between N-type electrode (3) and luminescent layer (8)
There is gap, the p-type CaN semiconductor layers (9) are located at the upper surface of luminescent layer (8), the p-type
CaN semiconductor layers (9) upper surface is provided with transparency conducting layer (2), transparency conducting layer (2) upper table
Face is provided with P-type electrode (10).
2. a kind of LED with graphene heat-conducting layer according to claim 1, its feature exist
In：Soldering is affixed leaded (5) on the N-type electrode (3) and P-type electrode (10), described to draw
Line (5) extends lampshade (1) lower surface certain length.
3. a kind of LED with graphene heat-conducting layer according to claim 1, its feature exist
In：The lampshade (1) is transparent material, and the substrate (7) uses sapphire material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610328817.0A CN107394026A (en) | 2016-05-17 | 2016-05-17 | A kind of LED with graphene heat-conducting layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610328817.0A CN107394026A (en) | 2016-05-17 | 2016-05-17 | A kind of LED with graphene heat-conducting layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107394026A true CN107394026A (en) | 2017-11-24 |
Family
ID=60338718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610328817.0A Pending CN107394026A (en) | 2016-05-17 | 2016-05-17 | A kind of LED with graphene heat-conducting layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107394026A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054849A (en) * | 2020-08-19 | 2020-12-08 | 浙江工业大学 | Infrared encryption communication device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202405254U (en) * | 2011-11-10 | 2012-08-29 | 杭州创元光电科技有限公司 | High power LED light source packaging structure made of graphene |
| CN202564439U (en) * | 2012-03-31 | 2012-11-28 | 泉州市博泰半导体科技有限公司 | Semiconductor luminescent device |
| CN102820397A (en) * | 2011-06-09 | 2012-12-12 | Lg伊诺特有限公司 | Light emitting diode, light emitting device package including the same and lighting system |
| CN104051596A (en) * | 2014-05-26 | 2014-09-17 | 广州市尤特新材料有限公司 | LED glass support and manufacturing method thereof |
| CN203850340U (en) * | 2014-05-04 | 2014-09-24 | 泉州市金太阳照明科技有限公司 | LED structure |
| CN104465895A (en) * | 2013-09-18 | 2015-03-25 | 上海蓝光科技有限公司 | Led chip and manufacturing method thereof |
| CN204289526U (en) * | 2014-12-31 | 2015-04-22 | 天际(吉安)光电信息有限公司 | Light emitting diode construction |
-
2016
- 2016-05-17 CN CN201610328817.0A patent/CN107394026A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820397A (en) * | 2011-06-09 | 2012-12-12 | Lg伊诺特有限公司 | Light emitting diode, light emitting device package including the same and lighting system |
| CN202405254U (en) * | 2011-11-10 | 2012-08-29 | 杭州创元光电科技有限公司 | High power LED light source packaging structure made of graphene |
| CN202564439U (en) * | 2012-03-31 | 2012-11-28 | 泉州市博泰半导体科技有限公司 | Semiconductor luminescent device |
| CN104465895A (en) * | 2013-09-18 | 2015-03-25 | 上海蓝光科技有限公司 | Led chip and manufacturing method thereof |
| CN203850340U (en) * | 2014-05-04 | 2014-09-24 | 泉州市金太阳照明科技有限公司 | LED structure |
| CN104051596A (en) * | 2014-05-26 | 2014-09-17 | 广州市尤特新材料有限公司 | LED glass support and manufacturing method thereof |
| CN204289526U (en) * | 2014-12-31 | 2015-04-22 | 天际(吉安)光电信息有限公司 | Light emitting diode construction |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054849A (en) * | 2020-08-19 | 2020-12-08 | 浙江工业大学 | Infrared encryption communication device |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171124 |
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| RJ01 | Rejection of invention patent application after publication |