CN202658269U - Crystalline silicon ingot casting furnace provided with heat exchanging device - Google Patents
Crystalline silicon ingot casting furnace provided with heat exchanging device Download PDFInfo
- Publication number
- CN202658269U CN202658269U CN 201220241947 CN201220241947U CN202658269U CN 202658269 U CN202658269 U CN 202658269U CN 201220241947 CN201220241947 CN 201220241947 CN 201220241947 U CN201220241947 U CN 201220241947U CN 202658269 U CN202658269 U CN 202658269U
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- thermal baffle
- thermal insulation
- silicon ingot
- insulation cage
- thermal
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model provides a crystalline silicon ingot casting furnace provided with a heat exchanging device. The crystalline silicon ingot casting furnace provided with the heat exchanging device comprises a thermal insulation cage, wherein an upper heater and a lateral heater are arranged in the thermal insulation cage, a carrying table is arranged at the middle part of the thermal insulation cable, and is used for containing materials, a cooling plate is arranged at the lower end of the thermal insulation cage, a fixed heat insulating plate and a movable heat insulating plate are arranged between the carrying table and the cooling plate, the fixed heat insulating plate is fixedly connected to an inner wall of the thermal insulation cage, the movable heat insulating plate is movably arranged on the thermal insulation cage in an inserted manner, a pull rod is connected to one end of the movable heat insulating plate, an outer end of the pull rod is in transmission connection with a stepping motor, and the movable heat insulating plate is in fitting connection with the fixed heat insulating plate in a seamless manner, and can be driven by the stepping motor to move in parallel along the fixed heat insulating plate. According to the utility model, heat exchanging volume at the bottom can be quantitatively controlled by controlling the size of heat exchanging openings of upper and lower layers of heat insulating plates through the stepping motor, so that energy can be saved at a heating and melting stage, the heat exchanging volume can be controlled at a crystal growing stage, and time can be shortened at an annealing and cooling stage, and therefore production cycle of a silicon ingot can be shortened, and high-quality silicon ingot can be produced.
Description
Technical field
The utility model relates to a kind of medical equipment, relates in particular to a kind of crystalline silicon ingot casting furnace with heat exchanger.
Background technology
Sun power is human inexhaustible renewable energy source, and solar cell is exactly to utilize photovoltaic effectiveness sun power directly to be converted to a kind of device of electric energy.Make the at present main crystalline silicon material that adopts of solar cell, by the crystalline silicon material that directional solidification technique is produced, have higher cost performance.
Crystalline silicon ingot casting furnace is a kind of silicon melting equipment, is to produce the peculiar visual plant of large specification solar level cell polysilicon ingot.In the production, will meet the requirements of polycrystalline silicon material and pack in the stove, by vacuumize, heat, melt, long brilliant, annealing, cooling comes out of the stove.
Existing Base Heat switch is generally adapting table and cooling bottom plate and directly carries out heat exchange, consumed so very many heats in heating and thaw process, and in long brilliant process, crystal growth direction and speed is difficult to control, and crystal mass is relatively relatively poor; The device that also has the blinds of the openings of sizes of passing through control strip thermal baffle, but structure and principle are comparatively complicated; Also have by the pull thermofin to reach the device that opens and closes effect, this device can not reach the effect that quantitative heats exchange capacity.
The utility model content
The purpose of this utility model exactly in order to address the above problem, provides a kind of crystalline silicon ingot casting furnace with heat exchanger.
In order to achieve the above object, the utility model has adopted following technical scheme: a kind of crystalline silicon ingot casting furnace with heat exchanger, comprise Thermal insulation cage, be provided with upper heater and side well heater in the Thermal insulation cage, the Thermal insulation cage middle part is provided with the charging adapting table, the Thermal insulation cage lower end is provided with cooling plate, is provided with fixedly thermal baffle and movable thermal baffle between adapting table and cooling plate, and fixedly thermal baffle is fixedly connected on the inwall of Thermal insulation cage; Movable thermal baffle activity interts on Thermal insulation cage, and the one end is connected with pull bar, and the outer end of this pull bar links to each other with the stepper-motor transmission; Movable thermal baffle link to each other with the fixing seamless applying of thermal baffle and can be under the drive of stepper-motor the fixing thermal baffle parallel in edge.
All be provided with the identical a plurality of holes of rule on described fixedly thermal baffle and the movable thermal baffle, during two thermal baffle generation relative displacements, that the hole on two thermal baffles can form is not overlapping, overlap or whole overlapping working ordeies.
Described fixedly thermal baffle is that size is identical, the rectangle hole of proper alignment with a plurality of holes on the movable thermal baffle, and the hole of adjacent lines is crisscross arranged, and the hole of adjacent column is crisscross arranged.
Described fixedly thermal baffle and movable thermal baffle are formed by the manufacturing of graphite carbon felt material.
The crystalline silicon ingot casting furnace of the utility model band heat exchanger, size by two-layer thermal baffle heat exchange mouth about the electric machine control, can quantitatively control the Base Heat exchange capacity, not only in heating and melting stage conserve energy, and at the long brilliant controlled exchange capacity that heats of stage, be conducive to form a stable vertical temperature gradient, can shorten the time in annealing and cooling stages, thereby shorten the production cycle of silicon ingot, produce high-quality silicon ingot.
Description of drawings
Fig. 1 is one-piece construction synoptic diagram of the present utility model;
Fig. 2 is the local structure synoptic diagram of heat exchange mouth when opening wide fully
Fig. 3 is the fixing structural representation of thermal baffle;
Fig. 4 is the structural representation of movable thermal baffle.
Embodiment
Referring to Fig. 1, cooperation is referring to Fig. 2, Fig. 3, Fig. 4, the crystalline silicon ingot casting furnace of the utility model band heat exchanger, comprise Thermal insulation cage 1, be provided with upper heater 2 and side well heater 31,32 in the Thermal insulation cage 1, the Thermal insulation cage middle part is provided with charging adapting table 4, place crucible 5 on the adapting table 4, the Thermal insulation cage lower end is provided with cooling plate 6, is provided with fixedly thermal baffle 71 and movable thermal baffle 72 between adapting table 4 and cooling plate 6, and fixedly thermal baffle 71 is fixedly connected on the inwall of Thermal insulation cage; Movable thermal baffle 72 activities intert on Thermal insulation cage, and the one end is connected with pull bar 8, and the outer end of this pull bar links to each other with stepper-motor 9 transmissions; Movable thermal baffle 72 link to each other with fixing thermal baffle 71 seamless applyings and can be under the drive of stepper-motor the fixing thermal baffle parallel in edge.
When all being provided with identical a plurality of holes 10, the two thermal baffle generation relative displacement of rule on the fixedly thermal baffle in the utility model and the movable thermal baffle, that the hole on two thermal baffles can form is not overlapping, overlap or whole overlapping working ordeies.When not overlapping, thermal baffle is isolated the effect of cooling plate 6 fully, plays insulation effect.When overlapping or all overlapping, just form the heat exchange mouth 11 of up/down perforation, play cooling effect, as shown in Figure 2.By regulating the size of heat exchange mouth 11, can regulate heat exchange amount, reach the purpose of epitaxis, produce high-quality silicon ingot.
Fixedly thermal baffle in the utility model is that size is identical, the rectangle hole of proper alignment with a plurality of holes on the movable thermal baffle, and the hole of adjacent lines is crisscross arranged, and the hole of adjacent column is crisscross arranged.
Fixedly thermal baffle in the utility model and movable thermal baffle are formed by the manufacturing of graphite carbon felt material.
The principle of work of the crystalline silicon ingot casting furnace of the utility model band heat exchanger is that when thermal baffle was relatively motionless, hole was not overlapping on the two-layer thermal baffle up and down.When by motor pulling activity thermal baffle the time, two-layer thermal baffle generation relative displacement, hole is overlapped, form the heat exchange mouth, by regulating the size of heat exchange mouth, can regulate heat exchange amount, reach the purpose of directional crystal growth, produce high-quality silicon ingot, and reduce the energy consumption of castingprocesses and shorten the production cycle.It is reasonable in design, simple to operate, can improve the crystalline silicon growth quality.
Claims (4)
1. crystalline silicon ingot casting furnace with heat exchanger, comprise Thermal insulation cage, be provided with upper heater and side well heater in the Thermal insulation cage, the Thermal insulation cage middle part is provided with the charging adapting table, the Thermal insulation cage lower end is provided with cooling plate, it is characterized in that: be provided with fixedly thermal baffle and movable thermal baffle between adapting table and cooling plate, fixedly thermal baffle is fixedly connected on the inwall of Thermal insulation cage; Movable thermal baffle activity interts on Thermal insulation cage, and the one end is connected with pull bar, and the outer end of this pull bar links to each other with the stepper-motor transmission; Movable thermal baffle link to each other with the fixing seamless applying of thermal baffle and can be under the drive of stepper-motor the fixing thermal baffle parallel in edge.
2. according to claims 1 described crystalline silicon ingot casting furnace with heat exchanger, it is characterized in that: all be provided with the identical a plurality of holes of rule on described fixedly thermal baffle and the movable thermal baffle, during two thermal baffle generation relative displacements, that the hole on two thermal baffles can form is not overlapping, overlap or whole overlapping working ordeies.
3. according to claims 2 described crystalline silicon ingot casting furnaces with heat exchanger, it is characterized in that: a plurality of holes on described fixedly thermal baffle and the movable thermal baffle are identical for size, the rectangle hole of proper alignment, the hole of adjacent lines is crisscross arranged, and the hole of adjacent column is crisscross arranged.
4. according to claims 1 described crystalline silicon ingot casting furnace with heat exchanger, it is characterized in that: described fixedly thermal baffle and movable thermal baffle are formed by the manufacturing of graphite carbon felt material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220241947 CN202658269U (en) | 2012-05-25 | 2012-05-25 | Crystalline silicon ingot casting furnace provided with heat exchanging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220241947 CN202658269U (en) | 2012-05-25 | 2012-05-25 | Crystalline silicon ingot casting furnace provided with heat exchanging device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202658269U true CN202658269U (en) | 2013-01-09 |
Family
ID=47453188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220241947 Expired - Lifetime CN202658269U (en) | 2012-05-25 | 2012-05-25 | Crystalline silicon ingot casting furnace provided with heat exchanging device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202658269U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328492A (en) * | 2014-11-27 | 2015-02-04 | 吕铁铮 | Device for moving small insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
-
2012
- 2012-05-25 CN CN 201220241947 patent/CN202658269U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104328492A (en) * | 2014-11-27 | 2015-02-04 | 吕铁铮 | Device for moving small insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130109 |