CN202585398U - 一种适用于单边多引线键合的塑封引线框架 - Google Patents

一种适用于单边多引线键合的塑封引线框架 Download PDF

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CN202585398U
CN202585398U CN2012202059256U CN201220205925U CN202585398U CN 202585398 U CN202585398 U CN 202585398U CN 2012202059256 U CN2012202059256 U CN 2012202059256U CN 201220205925 U CN201220205925 U CN 201220205925U CN 202585398 U CN202585398 U CN 202585398U
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lead frame
bonding
slide glass
stage casing
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李科
蔡少峰
陈凤甫
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SICHUAN LIPTAI ELECTRONIC CO Ltd
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Abstract

本实用新型涉及半导体封装的载片技术,是一种适用于单边多引线键合的塑封引线框架,主要是将引线管脚中间的连接管脚设置成上段、中段和下段,上段和下段通过中段连接,三段在纵向上错开分布,上段位于中段的左上部,中段位于下段的左上部,上段与载片区底部的左半部分连接;本实用新型载片设计简单合理,在确保功率器件单边满足大电流要求的情况下增大焊盘,另外一边根据小电流缩小焊盘,在确保产品生产工艺和质量情况下降低成本,能够很好的适应半导体封装器件的多变性。

Description

一种适用于单边多引线键合的塑封引线框架
技术领域
本实用新型涉及半导体封装的载片技术领域,特别是一种适用于单边多引线键合的塑封引线框架。
背景技术
半导体在我们的实际生活中引用极其广泛,有很多电子产品上面都有用到半导体器件。目前大功率半导体器件主要采用铝线键合技术,小功率、小电流器件主要采用金、铜键合技术封装。由于器件电流不同,要求其发射极或源极的焊线采用多根铝线,要求其焊接区域较大;基区或G区采用铜或金丝键合,焊接区域采用小焊盘。
由于目前用到的市面上的引线框架左右键合区域均一样大,如图1所示,导致小电流铜线键合焊盘太大浪费成本,大电流铝线焊接焊盘太小,所以存在键合困难的问题。
特别涉及单边多引线焊接类型的封装器件,要求使用的塑封引线框架,因为单边焊接多条内引线,对塑封引线框架的管脚焊区面积有一定要求,因此多条内引线在执行压焊键合时,若塑封引线框架管脚焊区面积不充足,将影响多条内引线的键合执行,也可能影响到焊接的键合强度,所以现有的常规塑封引线框架不能适应这种单边多引线焊接的要求。因此出现了一些关于铜铝线混合键合的半导体芯片封装技术,例如,中国专利文献,公开号为CN201655790U,公开日为20101124的实用新型专利,公开了一种铜铝线混合键合半导体芯片封装件,包括引线框架载体、半导体芯片、内引脚、金属丝和塑封体,所述半导体芯片上设置有大焊盘和小焊盘,所述金属丝为铝丝和铜丝,铝丝的一端与大焊盘电连接,另一端与内引脚电连接;铜丝的一端与小焊盘电连接,另一端与内引脚电连接;所述塑封体覆盖引线框架载体、半导体芯片、铝丝、铜丝和部分内引脚。这种铝线键合芯片大焊盘虽然能满足大电流要求,焊接面积还是和传统的一致,但是该技术方案的引线管脚设计没有变化,因此焊接面积还是很有限,所以需要一种具有更合理焊接面积的新型的塑封引线框架的设计方案。
实用新型内容
本实用新型为解决上述技术问题,提供了一种适用于单边多引线键合的塑封引线框架,结构简单,而且焊接面积足以实现大电流多引线键合技术的要求,同时还能降低器件成本。
本实用新型解决上述技术问题所涉及到技术方案为:
一种适用于单边多引线键合的塑封引线框架,包括上部的散热片、中部的载片区和下部的三个引线管脚,三个引线管脚由左管脚、中间的连接管脚和右管脚组成,所述载片区与中间的连接管脚连接,其特征在于:所述连接管脚设置成上段、中段和下段,上段和下段通过中段连接,三段在纵向上错开分布,上段位于中段的左上部,中段位于下段的左上部,上段与载片区底部的左半部分连接。
所述中段呈倾斜状,或者圆弧状。
因传统引线框架的左管脚和右管脚的焊接面积是对称设计的,中间的连接管脚与载片区底部的中心轴位置连接,所以无法满足单边对引线键合对塑封引线框架的特殊要求,因此本实用新型将左管脚的焊接面积减小,右管脚的焊接面积增大,打破了传统常规引线框架管脚的对称设计,同时将连接管脚的形状设计成异形,可以通过移动载片区与连接管脚的连接点位置,实现单边多引线键合。
所述右管脚左下角设置有倒角,倒角角度可以和中段的角度基本一致。
所述连接管脚的下段的左边缘可以设计成与上段的中线延长线重合。
所述左管脚的宽度范围为:2.35mm-2.45mm。因单边多引线键合对塑封引线框架的特殊要求,所以需要传统的引线框架的左管脚焊接面积减少,则是在保持左管脚左边缘不变化的情况下,将左管脚的右边缘向左边缘缩进,并保持高度不变。因为在执行单边对引线焊接时,引线框架的左管脚一般都是焊接铜丝或金丝,同时大多数也是只焊接一条键合线,可以有效降低成本,同时为了满足载片区与连接管脚的异形设计所需要的空间,也需要将左管脚的焊接面积向引线管脚的外边缘缩进。
所述右管脚的宽度范围为:2.75mm-3.85mm。因大电流器件引线键合在执行时,所述的引线框架的右管脚需要焊接两条、三条、四条,甚至更多条的键合线,键合线一般是粗铝线,涉及到内引线的线径较大,一般在300μm及以上尺寸的线径,在这种内引线数量众多且键合线径较大的情况下,传统引线框架的承载能力已经不能满足这种要求了,所以迫使需要加大右管脚的焊接面积,所以需要在保持右管脚的右边缘不变的情况下,将右管脚的左边缘向中间的连接管脚方向扩进,并且为适应连接管脚的异形设计所需要的空间,需要在右管脚的左下角处做倒角处理。
本实用新型的有益效果如下:
本实用新型结构简单,优化后的结构可以使左右管脚的焊接面积满足大电流单边多引线键合的要求,大大提高了大电流器件多铝线焊接可靠性,同时节省了器件引线成本;本实用新型适用于各类金-铝线混打器件、铜-铝线混打器件、功率三极管、MOS管件、IGBT器件等封装使用。
附图说明
图1是传统的常规引线框架结构示意图
图2是本实用新型的结构示意图
图3是本实用新型的连接管脚的结构示意图
图4是本实用新型的右管脚的结构示意图
图5是本实用新型的的整体引线框架示意图
图6是本实用新型的实际应用结构示意图
其中,附图标记为:1散热片,2载片区,3左管脚,4连接管脚,5右管脚,6连接管脚的上段,7连接管脚的中段,8连接管脚的下段,9倒角,10单根引线,11多根键合引线。
具体实施方式
如图2和5所示,一种适用于单边多引线键合的塑封引线框架,包括上部的散热片1、中部的载片区2和下部的三个引线管脚,三个引线管脚由左管脚3、中间的连接管脚4和右管脚5组成,所述载片区2与中间的连接管脚4连接,所述连接管脚4设置成上段6、中段7和下段8,上段6和下段8通过中段7连接,三段在纵向上错开分布,上段6位于中段7的左上部,中段7位于下段8的左上部,所述上段6与载片区2底部的左半部分连接。
如图3所示,连接管脚4的中段7可以设计成倾斜状;当然,也可以将中段7设计成弧形段。
本实施例将传统引线框架的“ I ”形连接结构修改为现在的异形连接结构,是因传统引线框架的左管脚3和右管脚5的焊接面积是对称设计的,中间的连接管脚4与载片区2底部的中心轴位置连接,所以无法满足单边对引线键合对塑封引线框架的特殊要求,因此本实用新型将左管脚3的焊接面积减小,右管脚5的焊接面积增大,打破了传统常规引线框架管脚的对称设计,同时将连接管脚4的形状设计成异形,可以通过移动载片区2与连接管脚4的连接点位置,实现单边多引线键合。
因此在有限的空间内,将连接管脚4向左管脚3方向移动,本实施例的移动量为0.66±0.05mm,其他封装所使用的引线框架的变化量根据具体实际框架而定。
移动后,连接管脚4的下段8的左边缘可以与上段6的中线延长线重合。
所述左管脚3的宽度范围为:2.4mm。因为传统的引线框架的左管脚3宽度为2.8mm,但是为了满足单边多引线键合对塑封引线框架的特殊要求,所以需要减少传统的引线框架的左管脚3焊接面积。实现方式就是在保持左管脚3左边缘不变化的情况下,将左管脚3的右边缘向左边缘缩进,并保持高度不变。因为在执行单边对引线焊接时,引线框架的左管脚3一般都是焊接铜丝或金丝,同时大多数也是只焊接一条键合线,可以有效降低成本,同时为了满足载片区2与连接管脚4的异形设计所需要的空间,也需要将左管脚3的焊接面积向引线管脚的外边缘缩进,本实施例的缩进范围为:0.4±0.05mm。但是,不同封装类型使用的塑封引线框架尺寸有很大差异,缩进尺寸也各不相同,具体要按照各封装所使用的引线框架而定。
所述右管脚5的宽度设计为3.8mm。因大电流器件引线键合在执行时,引线框架的右管脚5需要焊接两条、三条、四条,甚至更多条的键合线,键合线一般是粗铝线,涉及到内引线的线径较大,一般在300μm及以上尺寸的线径,在这种内引线数量众多且键合线径较大的情况下,传统引线框架的承载能力已经不能满足这种要求了,所以需要加大右管脚5的焊接面积,所以需要在保持右管脚5的右边缘不变的情况下,将右管脚5的左边缘向中间的连接管脚4方向扩进,,本实施例的扩进范围为:1.0±0.05mm。并且,为适应连接管脚4的异形设计所需要的空间,需要在右管脚5的左下角处做倒角9处理。
如图4所示,所述右管脚5左下角设计一个0.46mm(横向)*0.78mm(纵向)的倒角9,倒角9角度可以和中段7倾斜的角度一致。倒角9的设计是为了使与载片区2连接的连接管脚4中段7的异形设计的需要相对应。
如图6所示,本实用新型的应用实例,左侧键合单根引线10,可以是金线、铜线或细铝线,右侧键合多根键合引线11。本实用新型适合于半导体封装行业日益变化的封装形式,是一大新型设计,对半导体封装行业是一大利益点。

Claims (5)

1.一种适用于单边多引线键合的塑封引线框架,包括上部的散热片(1)、中部的载片区(2)和下部的三个引线管脚,三个引线管脚由左管脚(3)、中间的连接管脚(4)和右管脚(5)组成,所述载片区(2)与中间的连接管脚(4)连接,其特征在于:所述连接管脚(4)设置成上段(6)、中段和下段(8),上段(6)和下段(8)通过中段连接,三段在纵向上错开分布,上段(6)位于中段(7)的左上部,中段(7)位于下段(8)的左上部,上段(6)与载片区(2)底部的左半部分连接。
2.根据权利要求1所述的塑封引线框架,其特征在于:所述中段(7)设计为倾斜状。
3.根据权利要求1所述的塑封引线框架,其特征在于:所述中段(7)设计为弧形状。
4.根据权利要求1或2或3所述的塑封引线框架,其特征在于:所述右管脚(5)左下角设置有倒角(9)。
5.根据权利要求4所述的塑封引线框架,其特征在于:所述连接管脚(4)的下段(8)的左边缘与上段(6)的中线延长线重合。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928426A (zh) * 2014-03-28 2014-07-16 张轩 一种引线框架
CN109860139A (zh) * 2018-12-27 2019-06-07 长电科技(宿迁)有限公司 一种引线框架结构
CN110164832A (zh) * 2019-05-31 2019-08-23 无锡电基集成科技有限公司 大电流半导体功率器件

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928426A (zh) * 2014-03-28 2014-07-16 张轩 一种引线框架
CN109860139A (zh) * 2018-12-27 2019-06-07 长电科技(宿迁)有限公司 一种引线框架结构
CN109860139B (zh) * 2018-12-27 2021-12-24 长电科技(宿迁)有限公司 一种引线框架结构
CN110164832A (zh) * 2019-05-31 2019-08-23 无锡电基集成科技有限公司 大电流半导体功率器件

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