CN202246851U - 沉积腔 - Google Patents
沉积腔 Download PDFInfo
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- CN202246851U CN202246851U CN2011203300828U CN201120330082U CN202246851U CN 202246851 U CN202246851 U CN 202246851U CN 2011203300828 U CN2011203300828 U CN 2011203300828U CN 201120330082 U CN201120330082 U CN 201120330082U CN 202246851 U CN202246851 U CN 202246851U
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Application Number | Priority Date | Filing Date | Title |
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CN2011203300828U CN202246851U (zh) | 2011-09-05 | 2011-09-05 | 沉积腔 |
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CN2011203300828U CN202246851U (zh) | 2011-09-05 | 2011-09-05 | 沉积腔 |
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CN202246851U true CN202246851U (zh) | 2012-05-30 |
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CN2011203300828U Expired - Fee Related CN202246851U (zh) | 2011-09-05 | 2011-09-05 | 沉积腔 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104078398A (zh) * | 2014-07-25 | 2014-10-01 | 上海华力微电子有限公司 | 一种改善刻蚀副产物凝结缺陷的晶圆净化腔 |
CN108866505A (zh) * | 2018-08-02 | 2018-11-23 | 武汉华星光电半导体显示技术有限公司 | 一种化学气相沉积设备 |
CN109837526A (zh) * | 2017-11-24 | 2019-06-04 | 北京北方华创微电子装备有限公司 | 一种薄膜沉积设备及清洗方法 |
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2011
- 2011-09-05 CN CN2011203300828U patent/CN202246851U/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104078398A (zh) * | 2014-07-25 | 2014-10-01 | 上海华力微电子有限公司 | 一种改善刻蚀副产物凝结缺陷的晶圆净化腔 |
CN109837526A (zh) * | 2017-11-24 | 2019-06-04 | 北京北方华创微电子装备有限公司 | 一种薄膜沉积设备及清洗方法 |
CN108866505A (zh) * | 2018-08-02 | 2018-11-23 | 武汉华星光电半导体显示技术有限公司 | 一种化学气相沉积设备 |
CN108866505B (zh) * | 2018-08-02 | 2020-12-04 | 武汉华星光电半导体显示技术有限公司 | 一种化学气相沉积设备 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Free format text: FORMER OWNER: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION Effective date: 20130422 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201203 PUDONG NEW AREA, SHANGHAI TO: 100176 DAXING, BEIJING |
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TR01 | Transfer of patent right |
Effective date of registration: 20130422 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120530 Termination date: 20180905 |
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CF01 | Termination of patent right due to non-payment of annual fee |