CN202167485U - Secondary packaging piece of semiconductor light-emitting diode - Google Patents

Secondary packaging piece of semiconductor light-emitting diode Download PDF

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Publication number
CN202167485U
CN202167485U CN2011202594650U CN201120259465U CN202167485U CN 202167485 U CN202167485 U CN 202167485U CN 2011202594650 U CN2011202594650 U CN 2011202594650U CN 201120259465 U CN201120259465 U CN 201120259465U CN 202167485 U CN202167485 U CN 202167485U
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CN
China
Prior art keywords
light emission
diode package
emission diode
package member
joint
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Expired - Fee Related
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CN2011202594650U
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Chinese (zh)
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袁毅
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Individual
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Individual
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Led Device Packages (AREA)

Abstract

The utility model discloses a secondary packaging piece of a semiconductor light-emitting diode, which comprises a lead wire frame first end pin and a lead wire frame second end pin, wherein conductive viscose is arranged on the lead wire frame first end pin. The technical scheme is that a light-emitting diode packaging piece and a circuit device used for driving and controlling the light-emitting diode packaging piece are fixed on the conductive viscose. The light-emitting diode packaging piece is connected with the lead wire frame first end pin through a first bonding copper wire with the surface coated by a platinum layer, the light-emitting diode packaging piece is connected with the circuit device through a second bonding copper wire with the surface coated by a platinum layer, and the circuit device is connected with the lead wire frame second end pin through a third bonding copper wire with the surface coated by a platinum layer. Seal bodies used for packaging the light-emitting diode packaging piece, the circuit device and the bonding copper wires with the surfaces coated by the platinum layers are further arranged on the lead wire frame first end pin and the lead wire frame second end pin.

Description

A kind of semiconductor light-emitting-diode secondary packaging part
[technical field]
The utility model relates to semiconductor light-emitting-diode, a kind of semiconductor diode secondary packaging part of more specifically saying so.
[background technology]
Semiconductor light-emitting-diode secondary packaging part, its basic structure be with through semiconductor light-emitting-diode and its driving of encapsulation or control circuit device accomplish is connected after, seal with encapsulant, and export visible light.
The semiconductor light-emitting-diode of process encapsulation and its driving and control circuit device are bonded in respectively in lead frame support or the substrate, connect to come forming circuit through wire, then with the encapsulant sealing, and the output visible light.The metal current silk generally adopts bonding gold wire or aluminium silicon bonding wire, and passes through the combination that bonding equipment is accomplished contact, and cost is high, and raw material lack.
[utility model content]
The utility model purpose is the deficiency that has overcome prior art; Provide a kind of simple in structure, can improve reliability, hot transfer efficiency, power with optical index, the semiconductor light-emitting-diode packaging part that is connected of passing through of increasing the service life, the reduce production costs bonding brass wire that the surface coats platinum layer.
The utility model is realized through following technical scheme:
A kind of semiconductor light-emitting-diode secondary packaging part; Comprise the lead frame first end pin 1 and the lead frame second end pin 2; The described lead frame first end pin 1 is provided with conductive viscose 3; It is characterized in that: on described conductive viscose 3, be fixed with light emission diode package member 4 and the circuit devcie 5 that is used to drive and control light emission diode package member 4; First bonding brass wire 6 that coats platinum layer by the surface between described light emission diode package member 4 and the described lead frame first end pin 1 is connected; Second bonding brass wire 7 that coats platinum layer by the surface between described light emission diode package member 4 and the described circuit devcie 5 is connected; The bond copper wire 8 that coats platinum layer by the surface between described circuit devcie 5 and the described lead frame second end pin 2 is connected, also is provided with on the described lead frame first end pin 1 and the described lead frame second end pin 2 to be used for the seal 9 that the bonding brass wire with described light emission diode package member 4 and described circuit devcie 5 and surface coating platinum layer encapsulates.
Aforesaid semiconductor light-emitting-diode secondary packaging part; It is characterized in that: be fixed with a plurality of described light emission diode package members 4 on the described conductive viscose 3; Described circuit devcie 5 is provided with circuit devcie first joint 51 and a plurality of circuit devcie second joints 52; Described light emission diode package member 4 is provided with light emission diode package member first joint 61 and light emission diode package member second joint 62; Described circuit devcie first joint 51 is connected with the described lead frame second end pin 2 through described bond copper wire 8; Described circuit devcie second joint 52 is connected with light emission diode package member first joint 61 on each described light emission diode package member 4 through described second bonding brass wire 7 respectively, and light emission diode package member second joint 62 on each described light emission diode package member 4 passes through described first bonding brass wire 6 respectively and is connected with the described lead frame first end pin 1.
Aforesaid semiconductor light-emitting-diode secondary packaging part; It is characterized in that: be fixed with a plurality of described light emission diode package members 4 and a plurality of described circuit devcies 5 on the described said conductive viscose 3; Each described circuit devcie 5 is provided with circuit devcie first joint 51 and circuit devcie second joint 52; Described light emission diode package member 4 is provided with light emission diode package member first joint 61 and light emission diode package member second joint 62; Each described circuit devcie first joint 51 is connected with the described lead frame second end pin 2 through described bond copper wire 8 respectively; Each described circuit devcie second joint 52 through described second bonding brass wire 7 respectively with each described light emission diode package member 4 on light emission diode package member first joint 61 is connected, light emission diode package member second joint 62 on each described light emission diode package member 4 passes through described first bonding brass wire 6 respectively and is connected with the described lead frame first end pin 1.
Compared with prior art, the utility model has following advantage:
1, the utility model adopts the surface to coat the bonding brass wire connection of platinum layer, and optimum cost can be provided, and the raising on the obtained performance.
2, the thermal conductivity of the utility model copper, conductivity are higher than gold and aluminium, thereby can improve its hot transfer efficiency and power and optical index.And help prolonging LED useful life.
3, gold is very low relatively for the cost of the utility model copper, becomes a big advantage that substitutes welding material especially, helps reducing production costs.
[description of drawings]
Fig. 1 is the utility model embodiment 1 structural representation;
Fig. 2 is the utility model A portion enlarged drawing;
Fig. 3 is the utility model embodiment 2 plan structure sketch mapes;
Fig. 4 is the utility model embodiment 3 plan structure sketch mapes.
[embodiment]
Embodiment 1: like Fig. 1, shown in Figure 2; A kind of semiconductor light-emitting-diode secondary packaging part; Comprise the lead frame first end pin 1 and the lead frame second end pin 2; The described lead frame first end pin 1 is provided with conductive viscose 3; On described conductive viscose 3, be fixed with single light emission diode package member 4 and the single circuit devcie 5 that is used to drive and control light emission diode package member 4; First bonding brass wire 6 that coats platinum layer by the surface between described light emission diode package member 4 and the described lead frame first end pin 1 is connected; Second bonding brass wire 7 that coats platinum layer by the surface between described light emission diode package member 4 and the described circuit devcie 5 is connected; The bond copper wire 8 that coats platinum layer by the surface between described circuit devcie 5 and the described lead frame second end pin 2 is connected, also is provided with on the described lead frame first end pin 1 and the described lead frame second end pin 2 to be used for the seal 9 that the bonding brass wire with described light emission diode package member 4 and described circuit devcie 5 and surface coating platinum layer encapsulates.
Embodiment 2: as shown in Figure 3; Be to be fixed with on the described conductive viscose 3 a plurality of described light emission diode package members 4 with the difference of embodiment 1; Described circuit devcie 5 is provided with circuit devcie first joint 51 and a plurality of circuit devcie second joints 52; Described light emission diode package member 4 is provided with light emission diode package member first joint 61 and light emission diode package member second joint 62; Described circuit devcie first joint 51 is connected with the described lead frame second end pin 2 through described bond copper wire 8; Described circuit devcie second joint 52 is connected with light emission diode package member first joint 61 on each described light emission diode package member 4 through described second bonding brass wire 7 respectively, and light emission diode package member second joint 62 on each described light emission diode package member 4 passes through described first bonding brass wire 6 respectively and is connected with the described lead frame first end pin 1.
Embodiment 3: as shown in Figure 4; Be to be fixed with on the described said conductive viscose 3 a plurality of described light emission diode package members 4 and a plurality of described circuit devcies 5 with the difference of embodiment 1; Each described circuit devcie 5 is provided with circuit devcie first joint 51 and circuit devcie second joint 52; Described light emission diode package member 4 is provided with light emission diode package member first joint 61 and light emission diode package member second joint 62; Each described circuit devcie first joint 51 is connected with the described lead frame second end pin 2 through described bond copper wire 8 respectively; Each described circuit devcie second joint 52 through described second bonding brass wire 7 respectively with each described light emission diode package member 4 on light emission diode package member first joint 61 is connected, light emission diode package member second joint 62 on each described light emission diode package member 4 passes through described first bonding brass wire 6 respectively and is connected with the described lead frame first end pin 1.

Claims (3)

1. semiconductor light-emitting-diode secondary packaging part; Comprise lead frame first end pin (1) and the lead frame second end pin (2); The described lead frame first end pin (1) is provided with conductive viscose (3); It is characterized in that: on described conductive viscose (3), be fixed with light emission diode package member (4)) and be used for driving and the circuit devcie (5) of control light emission diode package member (4); First bonding brass wire (6) that coats platinum layer by the surface between described light emission diode package member (4) and the described lead frame first end pin (1) is connected; Second bonding brass wire (7) that coats platinum layer by the surface between described light emission diode package member (4) and the described circuit devcie (5) is connected; The bond copper wire (8) that coats platinum layer by the surface between described circuit devcie (5) and the described lead frame second end pin (2) is connected, also is provided with on the described lead frame first end pin (1) and the described lead frame second end pin (2) to be used for the seal (9) that the bonding brass wire with described light emission diode package member (4) and described circuit devcie (5) and surperficial coating platinum layer encapsulates.
2. semiconductor light-emitting-diode secondary packaging part according to claim 1; It is characterized in that: be fixed with a plurality of described light emission diode package members (4) on the described conductive viscose (3); Described circuit devcie (5) is provided with circuit devcie first joint (51) and a plurality of circuit devcie second joint (52); Described light emission diode package member (4) is provided with light emission diode package member first joint (61) and light emission diode package member second joint (62); Described circuit devcie first joint (51) is connected with the described lead frame second end pin (2) through described bond copper wire (8); Described circuit devcie second joint (52) is connected with light emission diode package member first joint (61) on each described light emission diode package member (4) through described second bonding brass wire (7) respectively, and light emission diode package member second joint (62) on each described light emission diode package member (4) passes through described first bonding brass wire (6) respectively and is connected with the described lead frame first end pin (1).
3. semiconductor light-emitting-diode secondary packaging part according to claim 1; It is characterized in that: be fixed with a plurality of described light emission diode package members (4) and a plurality of described circuit devcie (5) on the described said conductive viscose (3); Each described circuit devcie (5) is provided with circuit devcie first joint (51) and circuit devcie second joint (52); Described light emission diode package member (4) is provided with light emission diode package member first joint (61) and light emission diode package member second joint (62); Each described circuit devcie first joint (51) is connected with the described lead frame second end pin (2) through described bond copper wire (8) respectively; Each described circuit devcie second joint (52) through described second bonding brass wire (7) respectively with each described light emission diode package member (4) on light emission diode package member first joint (61) is connected, light emission diode package member second joint (62) on each described light emission diode package member (4) passes through described first bonding brass wire (6) respectively and is connected with the described lead frame first end pin (1).
CN2011202594650U 2011-07-21 2011-07-21 Secondary packaging piece of semiconductor light-emitting diode Expired - Fee Related CN202167485U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011202594650U CN202167485U (en) 2011-07-21 2011-07-21 Secondary packaging piece of semiconductor light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011202594650U CN202167485U (en) 2011-07-21 2011-07-21 Secondary packaging piece of semiconductor light-emitting diode

Publications (1)

Publication Number Publication Date
CN202167485U true CN202167485U (en) 2012-03-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011202594650U Expired - Fee Related CN202167485U (en) 2011-07-21 2011-07-21 Secondary packaging piece of semiconductor light-emitting diode

Country Status (1)

Country Link
CN (1) CN202167485U (en)

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120314

Termination date: 20130721