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Radiating device integrating radiating plate and electrode and manufacturing method thereof

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Publication number
CN102110762A
CN102110762A CN 201010561114 CN201010561114A CN102110762A CN 102110762 A CN102110762 A CN 102110762A CN 201010561114 CN201010561114 CN 201010561114 CN 201010561114 A CN201010561114 A CN 201010561114A CN 102110762 A CN102110762 A CN 102110762A
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radiating
plate
electrode
device
layer
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CN 201010561114
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Chinese (zh)
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CN102110762B (en )
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张方辉
毕长栋
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陕西科技大学
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Abstract

The invention discloses a radiating device integrating a radiating plate and an electrode and a manufacturing method thereof. The radiating device comprises the radiating plate (1), a light-emitting diode (LED) chip (2) fixed onto the radiating plate (1), a fluorescent powder layer (3) coated on the radiating plate (1) and totally covering the LED chip (2), a silica gel sealing layer (4) coated on the fluorescent powder layer (3), an electrode pin (5) integrated on the radiating plate and an electrode lead (6) leaded from the electrode pin (5), wherein the silica gel sealing layer (4) is madeby mixing silica gel and nanometer or silica and micrometer particles. In the radiating device provided by the invention, the radiating plate is directly connected with the electrode pin, thereby improving the radiating efficiency of the chip and solving the problem of short service life of the device due to radiation problem; moreover, due to the elimination of bracket, the production cost is reduced and the invention is more favorable for commercial production.

Description

一种集散热板与电极于一体的散热器件及其制备方法 A set of radiator plate and the electrode member in the integrated radiator and preparation method

技术领域 FIELD

[0001] 本发明涉及一种散热器件,特别是一种集散热板与电极于一体的散热器件及其制备方法。 [0001] The present invention relates to a heat sink element, in particular a radiator device and method for preparing a set of radiator plate and the electrode in one.

背景技术 Background technique

[0002] LED被认为是21世纪最具发展前景的一种新型冷光源,LED产业是近年来被认为最具有发展潜力的产业之一,大家都期待LED能够进入普通照明市场,成为新照明光源。 [0002] LED is considered to be a new kind of cold light source the most promising in the 21st century, LED industry in recent years, is considered one of the most development potential of the industry, we are looking forward to enter the general LED lighting market, a new lighting source . 随着哥本哈根会议和低碳经济议题的发起,LED将大规模地进入普通照明市场,其经济产值已超过百亿美元。 With the Copenhagen conference and the launch of low-carbon economic issues, LED large-scale into the general lighting market, its economic output has more than ten billion US dollars. LED是一种固态的半导体器件,它可以直接把电转化为光,是比较理想的光源去代替传统的光源,它具有广泛的用途及众多优点,如:体积小、耗电量低、使用寿命长、 高亮度、低热量、环保、节能、坚固耐用等。 The LED is a solid state semiconductor devices, which can be converted directly into electricity to light, is an ideal light source to replace conventional light sources, it has a wide range of uses and many advantages, such as: small size, low power consumption, life long, high brightness, low-calorie, environmental protection, energy saving, durable and so on.

[0003] LED的发光机理是靠PN结中的电子在能带间跃迁产生光能,当它在外加电场作用下,电子与空穴的辐射复合发生电制作用将一部分能量转化为光能,而无辐射复合产生的晶格震荡将其余的能量转化为热能。 [0003] The LED is a light emission mechanism by the PN junction between the band electron transition generates light energy when it is under an applied electric field, radiative recombination of electrons and holes produced by the electrical generating portion of the energy into light, without radiative recombination generated the remainder of the lattice oscillation energy into thermal energy.

[0004] 散热是限制LED照明灯具发展的一个重要方面,由于LED属于半导体发光器件,而半导体器件随着自身温度的变化,其特性会有明显的变化。 An important aspect of the [0004] LED lighting is to limit the heat development, since the LED is a semiconductor light emitting device, and the semiconductor device itself with a change in temperature, change in the characteristics thereof will be apparent. 对于LED,结温的升高会导致器件各个方面性能的变化与衰减。 For the LED, the junction temperature rise causes a change various aspects of device performance and attenuation. LED的理论寿命能达到十万小时以上,实际使用中,LED的结温一般都比较高,70%的LED器件失效是由温度过高导致的,结温每升高10°C,LED的寿命将减少一半,因此,解决LED散热问题是LED能够产业化的一个重点研究方面。 The LED theoretical life can reach more than one hundred thousand hours, in actual use, the LED junction temperature is generally higher than 70% of the LED device failure caused by high temperature, the junction temperature is increased by 10 ° C, LED lifetime will be reduced by half, therefore, to solve the LED heat problem is a focus of research LED capable of industrialization.

发明内容 SUMMARY

[0005] 本发明所要解决的技术问题是提供一种集散热板与电极于一体的散热器件及其制备方法,解决芯片散热效果不好,使用寿命过短的问题。 [0005] The present invention solves the technical problem is to provide a heat sink device and a method for preparing a set of radiator plate and the electrode in one of the chip cooling solution ineffective, too short life problems.

[0006] 为实现上述目的,本发明提供了一种集散热板与电极于一体的散热器件,包括散热板、固定在散热板上的LED芯片、涂覆在散热板上并完全覆盖LED芯片的荧光粉层、涂覆在荧光粉层上的硅胶封装层,集成在散热板上的电极引脚,以及自电极引脚引出的电极引线,其中,芯片的电极引脚与散热板直接相连。 [0006] To achieve the above object, the present invention provides a heat collector plate and the electrode in one of the heat sink member, comprising a heat dissipation plate, the heat dissipation plate fixed to an LED chip, a heat dissipation plate coated and completely covers the LED chip phosphor layer coated on silica gel encapsulating layer phosphor layer, electrode pins integrated in the heat radiating plate, and the lead electrode leads extending from the electrode, wherein the electrode pins and the chip is directly connected to the heat dissipation plate.

[0007] 根据上述散热器件,本发明还提供一种集散热片与电极于一体的散热器件的制备方法,用点胶机将芯片和电极引脚固定在散热板上;用超声金丝球焊机将LED芯片与电极引脚之间形成良好接触;在散热板上涂覆荧光粉层,使荧光粉层完全覆盖LED芯片;最后, 在荧光粉层上涂覆硅胶封装层或装上外壳。 [0007] According to the heat sink member, the present invention also provides a method for preparing a heat sink member of a set of fins in one of the electrode, with the electrode pins and the chip dispenser is fixed to the radiating plate; gold ball bonding with an ultrasonic the machine is formed between the LED chip and the electrode pins good contact; phosphor layer coated on a heat dissipation plate, so that the phosphor layer completely cover the LED chip; and finally, the phosphor layer is coated on silica gel encapsulating layer or onto the housing.

[0008] 本发明与现有技术相比,至少具有以下优点:本发明将散热片与电极集成于一体, 更好地增加了芯片的散热,提高了芯片的使用寿命,由于直接将芯片电极封装到散热片上, 从而省去了支架,降低了成本,散热片的灵活设计、芯片的灵活排布,从而在保证散热较好的情况,延长使用寿命使其产品外形更加美观,满足使用者的需求。 [0008] Compared with the prior art the present invention has at least the following advantages: the present invention, the heat sink and the electrode are integrated in the better heat dissipation of the chip increases, to improve the life of the chip, the chip electrodes of a package due to the direct to the heat sink, thereby eliminating the need for a stent, reduces cost, flexible heat sink design, flexible arrangement of the chip, thus ensuring good heat dissipation case, extend the life of its products more attractive appearance to meet the needs of the user . 同时在封装胶里添加了纳米或微米粒子,从而扩大了发散角,增大了发光面积,使光线更加柔和、明亮。 While the plastic packaging was added a nano or micro particles, thereby expanding the divergence angle of the light emitting area is increased, so that the light softer, brighter. 附图说明 BRIEF DESCRIPTION

[0009] 图1是本发明散热器件的结构示意图; [0009] FIG. 1 is a schematic view of the present invention, the heat sink member;

[0010] 图2是图1的部分局部放大图。 [0010] FIG. 2 is a partially enlarged partial view of FIG.

[0011] 其中,1为散热板,2为LED芯片,3为荧光粉层,4为硅胶封装层,5为电极引脚,6 为电极引线。 [0011] wherein 1 is a heat dissipation plate, 2 LED chips, the phosphor layer 3, 4 is a silicone encapsulating layer, an electrode pin 5, 6 to the electrode lead.

具体实施方式 detailed description

[0012] 下面结合附图对本发明做详细描述: [0012] DRAWINGS detailed description of the invention:

[0013] 如图1、2所示,本发明集散热板与电极于一体的散热器件包括:散热板1、固定在散热板1上的LED芯片2、涂覆在散热板1上并完全覆盖LED芯片2的荧光粉层3、涂覆在荧光粉层3上的硅胶封装层4,集成在散热板1上的电极引脚5,以及自电极引脚5引出的电极引线6。 [0013] As shown, the present invention is set in one of the heat dissipation plate and the electrode heat sink member 2 comprising: a heat sink plate 1, the heat sink plate 1 is fixed to the LED chip 2, and the coating completely covers the heat sink plate 1 2 LED chip 3 of the phosphor layer, electrode lead wire 3 is coated on the phosphor layer silica gel encapsulation layer 4, a heat radiating plate on the integrated electrode pin 5, pin 5 and drawn out from the electrode 6.

[0014] 所述LED芯片2通过焊线串联、并联或混联等方式连接,并固定在散热板1上。 [0014] The LED chip 2 through the bonding wires connected in series, parallel or hybrid connection, etc., and is fixed to the heat sink plate 1.

[0015] 所述荧光粉层3涂覆在散热板1上,并覆盖LED芯片2。 [0015] The phosphor layer 3 is coated on the heat sink plate 1, and covers the LED chip 2.

[0016] 所述硅胶封装层4由硅胶和纳米或微米粒子混合而成,其中,硅胶与纳米或微米粒子的质量比为1 : 3〜3 : 1,可增大发光的面积,增大发射角,同时,使光线变得柔和,且均勻性良好;硅胶封装层4覆盖在荧光粉3层上,且硅胶封装层4的边缘稍大于荧光粉层3 的边缘。 [0016] The seal layer 4 mixture of silica and silica nano or microparticles together, wherein the mass ratio of silica gel with nano- or micro-particles is 1: 3~3: 1, a light emitting area can be increased, increasing the emission angle, while the light is softened, and good uniformity; silica gel encapsulation layer 4 coated on the phosphor layer 3, layer 4 and the edge silicone package is slightly greater than the edge of the phosphor layer 3.

[0017] 所述电极引脚5直接集成在散热板1上,更好地解决散热问题。 The [0017] electrode pin 5 is directly integrated on the heat sink plate 1, to better solve the heat problem.

[0018] 本发明器件的制备方法包括以下步骤: [0018] The device production method of the present invention comprises the following steps:

[0019] 1.散热板设计:根据具体使用需要,进行散热板的设计,可设计其形状、面积、厚 [0019] 1. The design of the heat dissipation plate: The specific use required, the heat dissipation plate design, design the shape, size, thickness

度等; Degree;

[0020] 2.散热板加工:根据设计的具体参数对散热板进行加工; [0020] 2. The heat radiating plate processing: processing for heat dissipation plate according to the specific design parameters;

[0021] 3.散热板清洗:对加工好的散热片板进行清洗工作,以便使用。 [0021] 3. The heat dissipation plate cleaning: good fin plate machining cleaning work to use.

[0022] 4.散热板上集成电极:将加工好的散热板与电极引脚进行集成,使用导热不导电的银胶使其具有良好的导热性且不会造成短路等情况,然后将芯片无支架直接封装到散热片上,通过金线焊接将芯片与电极连接起来,再根据设计需要将各芯片以串联、并联、混联等方式连接起来。 [0022] 4. The integrated electrode plate heat: The heat radiating plate processed integrated with electrode pins, using a thermally-conductive silver paste to have good thermal conductivity and does not cause a short circuit, etc., and then the chip no scaffold encapsulates a heat sink, connected by a gold wire bonding to the chip together with the electrode, depending on design requirements and then the chips in series, parallel, hybrid, etc. are connected.

[0023] 5.散热板上固晶:将进行过扩晶处理的LED芯片安置在刺晶台的夹具上,在显微镜下利用刺晶笔将LED芯片一个一个地刺到相应的位置; [0023] The heat dissipation plate crystalline solid: LED chip will be placed over the expanding crystal process thorn crystal on a jig table, using barbed crystal pen under a microscope, the LED chip to a corresponding stab position;

[0024] 6.金线焊接:用超声金丝球焊机使金丝在LED芯片的电极和外部的电极引线键合区之间形成良好的欧姆接触; [0024] 6. The gold wire welding: ultrasonic gold wire bonder gold wire to form a good ohmic contact between the electrode and the outer electrode lead of the LED chip bonding region;

[0025] 7.点荧光粉:将荧光粉直接点在散热板上,使荧光粉完全覆盖LED芯片; [0025] 7. Phosphor point: the point at the phosphor directly heat dissipation plate, so that the phosphor completely cover the LED chip;

[0026] 8.纳米粒子配光:将添加有纳米或微米粒子并搅拌均勻的硅胶按照荧光粉的涂覆区域封装到散热板上,形成硅胶封装层,其中,硅胶涂覆的区域的边缘稍大于荧光粉所在区域的边缘;接着,将上述得到的器件在135°C固化1小时,即得发光二极管; [0026] 8. The nanoparticles of the light distribution: adding the nano or micro particles of silica gel and stir the radiating plate package according phosphor coating area, silicone encapsulation layer is formed, wherein the silica-coated edge region slightly greater than the edge area where the phosphor; Next, the above-described device obtained cured for 1 hour at 135 ° C, to obtain a light emitting diode;

[0027] 9.安装外壳及测试:安装LED的外壳,然后对得到的发光二极管LED进行光电参数以及外形尺寸的测试。 [0027] 9. The mounting housing and Testing: mounting an LED housing, and the light-emitting diode LED photoelectrically parameters and dimensions of the test. [0028] 在本发明中,由于将散热板与电极集成于一体,很好地提高了散热效率,简化了生产步骤,降低了成本。 [0028] In the present invention, since the heat radiating plate and the electrode are integrated in the well improve the heat dissipation efficiency, simplify the production steps and reduce the cost. 通过在硅胶中添加有纳米或微米粒子,可以使LED有较好的出光效率和均勻性。 By adding nano or micron silica gel particles, the LED may have better light efficiency and uniformity.

[0029] 以上所述仅为本发明的一种实施方式,不是全部或唯一的实施方式,本领域普通技术人员通过阅读本发明说明书而对本发明技术方案采取的任何等效的变换,均为本发明的权利要求所涵盖。 [0029] The above description is only one embodiment of the present invention, not all of or the only embodiments, those of ordinary skill in the art of the present invention to take a reading of the description of the present invention, any equivalent transformations are present It encompassed by the claims of the invention.

Claims (7)

1. 一种集散热板与电极于一体的散热器件,其特征在于:包括散热板(1)、固定在散热板(1)上的LED芯片(2)、涂覆在散热板(1)上并完全覆盖LED芯片(2)的荧光粉层(3)、 涂覆在荧光粉层⑶上的硅胶封装层(4),集成在散热板上的电极引脚(5),以及自电极引脚(5)引出的电极引线(6),其中,芯片的电极引脚(5)与散热板⑴直接相连。 A radiator plate with the electrode set in one of the radiator member, characterized by: a heat sink plate (1), the heat dissipation plate fixed to the LED chip (2) (1), coated on the heat radiating plate (1) and completely cover the LED chip (2) a phosphor layer (3), the phosphor layer is coated on silica gel ⑶ encapsulation layer (4), integrated in the cooling plate electrode pins (5), and since the electrode pins (5) the electrode lead (6) leads, wherein the electrode pins of the chip (5) is directly connected with the heat dissipation plate ⑴.
2.如权利要求1所述的一种集散热板与电极于一体的散热器件,其特征在于:所述硅胶封装层(4)由按照质量比为1 : 3〜3 : 1的硅胶和纳米或微米粒子混合而成。 A set of heat sink as claimed in claim 1 and the electrode plate in one radiator element, characterized in that: said silicone encapsulation layer (4) consists of a mass ratio of 1: 3~3: 1 and silica nano or a mixture of microparticles.
3.如权利要求1所述的一种集散热板与电极于一体的散热器件,其特征在于:所述散热板为铝、铜、银金属或非金属具有良好散热性能的材料。 A set of said radiator plate 1 and the electrode in one radiator element as claimed in claim 3, wherein: said radiator plate material having good heat dissipation properties of aluminum, copper, silver metallic or non-metallic.
4.如权利要求1所述的一种集散热板与电极于一体的散热器件,其特征在于:所述硅胶封装层覆盖的区域大于荧光粉层的区域。 A set of heat sink as claimed in claim 1 and the electrode plate in one radiator element, characterized in that: the silica gel encapsulation layer region larger than the area covered by the phosphor layer.
5.根据权利要求1所述的集散热板与电极于一体的散热器件的制备方法,其特征在于:用点胶机将芯片和电极引脚固定在散热板上;用超声金丝球焊机将LED芯片与电极引脚之间形成良好接触;在散热板上涂覆荧光粉层,使荧光粉层完全覆盖LED芯片;最后,在荧光粉层上涂覆硅胶封装层或装上外壳。 The radiator plate collector electrode according to claim 1 and a method for preparing a heat sink integral member, characterized in that: the dispenser with a chip and the electrode pins fixed to the radiating plate; ultrasonic gold wire bonder formed between the LED chip and the electrode pins good contact; phosphor layer coated on a heat dissipation plate, so that the phosphor layer completely cover the LED chip; and finally, the phosphor layer is coated on silica gel encapsulating layer or onto the housing.
6.如权利要求5所述的一种集散热板与电极于一体的散热器件的制备方法,其特征在于:所述芯片之间采用串联、并联、混联中的任一种连接方式。 A set of the radiator plate 5 and the electrode 6. The method of preparation as claimed in claim radiator integral member, characterized in that: in series, in parallel between the chip, either mixed with the connection.
7.如权利要求5所述的一种集散热板与电极于一体的散热器件的制备方法,其特征在于:所述散热板与电极引脚通过导热不导电的银胶连接于一体。 7. The radiator plate 5 a set of electrodes according to the production method in one of the radiator member, characterized in that: the thermally conductive radiator plate and the electrode pins are connected electrically non-conductive silver paste in one pass.
CN 201010561114 2010-11-26 2010-11-26 Radiating device integrating radiating plate and electrode and manufacturing method thereof CN102110762B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956628A (en) * 2011-08-18 2013-03-06 乐金显示有限公司 Light emitting diode package
CN103929927A (en) * 2013-01-15 2014-07-16 艾默生网络能源-嵌入式计算有限公司 Integrated thermal inserts and cold plate
CN104134745B (en) * 2014-04-28 2017-02-15 绍兴宝之能照明电器有限公司 Aluminum packaging process led to mcob

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030116769A1 (en) * 2001-12-24 2003-06-26 Samsung Electro-Mechanics Co., Ltd. Light emission diode package
CN2590181Y (en) * 2002-09-10 2003-12-03 山西至诚科技有限公司 High power white light diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030116769A1 (en) * 2001-12-24 2003-06-26 Samsung Electro-Mechanics Co., Ltd. Light emission diode package
CN2590181Y (en) * 2002-09-10 2003-12-03 山西至诚科技有限公司 High power white light diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956628A (en) * 2011-08-18 2013-03-06 乐金显示有限公司 Light emitting diode package
US9373607B2 (en) 2011-08-18 2016-06-21 Lg Display Co., Ltd. Light emitting diode package
CN103929927A (en) * 2013-01-15 2014-07-16 艾默生网络能源-嵌入式计算有限公司 Integrated thermal inserts and cold plate
US9713287B2 (en) 2013-01-15 2017-07-18 Artesyn Embedded Computing, Inc. Integrated thermal inserts and cold plate
CN103929927B (en) * 2013-01-15 2017-08-11 艾默生网络能源-嵌入式计算有限公司 Integrated thermal insert and the cooling plate
CN104134745B (en) * 2014-04-28 2017-02-15 绍兴宝之能照明电器有限公司 Aluminum packaging process led to mcob

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