CN203351646U - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
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- CN203351646U CN203351646U CN 201320295265 CN201320295265U CN203351646U CN 203351646 U CN203351646 U CN 203351646U CN 201320295265 CN201320295265 CN 201320295265 CN 201320295265 U CN201320295265 U CN 201320295265U CN 203351646 U CN203351646 U CN 203351646U
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Abstract
The utility model provides an LED packaging structure which comprises a LED chip, a packaging adhesive, and a packaging substrate. The structure is characterized in that the bonding surface of the LED chip with the packaging adhesive and the bonding surface of the packaging substrate with the packaging adhesive are respectively provided with an insulating bonding layer. According to the utility model, the bonding surfaces of the LED chip and the packaging substrate respectively with the packaging adhesive are respectively provided with one insulating bonding layer, thereby enabling all parts of a packaged LED device to have consistent adhesive bonding performance and improving the reliability of the LED device. Meanwhile, the requirements for the bonding performance of the packaging adhesive are reduced, and the cost of the packaging adhesive is also reduced.
Description
Technical field
The utility model relates to the LED technical field, specifically a kind of LED encapsulating structure.
Background technology
LED(Light Emitting Diode, light-emitting diode) be a kind of solid-state semiconductor device, can convert electrical energy into luminous energy.Have that power consumption is little, spotlight effect good, reaction speed is fast, controllability is strong, can bear the advantages such as high impact forces, long service life, environmental protection.LED just progressively substitutes conventional light source, become novel the 4th generation light source.
At present, industry two kinds of LED chips comparatively commonly used: one is packed LED chip; Another is flip LED chips.Refer to Fig. 1, for adopting the encapsulating structure of packed LED chip, comprising: base plate for packaging 1, reflector 2, packaging plastic 3, LED chip 4, gold thread 5.LED chip 4 mainly comprises substrate, N-type layer, luminescent layer, P type layer and the N electrode, the P electrode that are connected with this N-type layer, this P type layer conduction respectively.LED chip 4 is fixed on base plate for packaging 1, and its N electrode, P electrode form conduction by gold thread 5 with the positive and negative electrode of base plate for packaging 1 respectively and be connected.Packaging plastic 3 covers on LED chip 4, and this LED chip 4 is coated.
Refer to Fig. 2, for adopting the encapsulating structure of flip LED chips, comprising: packaging plastic 40, LED chip 20, base plate for packaging 10, die bond layer 30.LED chip 20 mainly comprises substrate, N-type layer, luminescent layer, P type layer, reflector and the N electrode, the P electrode that are connected with this N-type layer, this P type layer conduction respectively.LED chip 20 is fixed on base plate for packaging 1, its N electrode, P electrode respectively by the conduction die bond layer 30(or, weld layer) with the positive and negative pad of base plate for packaging 10, be connected.Packaging plastic 3 covers on LED chip 20, and this LED chip 20 is coated.
No matter packed LED chip and flip LED chips, be all to send after class the light (as blue light) of monochromatic wavelength at electric field action by luminescent layer, then by packaging plastic, penetrates outside the LED device, according to the difference of packaging plastic material, forms the spectrum that contains the polychrome wavelength.Packaging plastic can be simple layer, can be also multilayer laminated, generally adopts fluorescent glue, epoxy resin, perspex or glass material.The packaging plastic be arranged on LED chip need to be attached to by the adhesive property of self surface of LED chip and base plate for packaging, and its adhesion property is along with the material difference of bonding interface there are differences.Such as, the sapphire material of LED chip and carbofrax material and packaging plastic to adhere to adhesive property just inconsistent; The metallic circuit on base plate for packaging surface part, nonmetal circuit part and packaging plastic to adhere to adhesive property also different.The adhesive property that adheres to of packaging plastic and LED chip, base plate for packaging all there are differences like this, and this kind of phenomenon greatly reduces the reliability of LED device; For improving the reliability of LED device, avoid occurring the phenomenon that packaging plastic breaks away from, therefore, need the packaging plastic that uses adhesive property comparatively excellent in encapsulation process, be unfavorable for the cost control of packaging plastic.
The utility model content
The purpose of this utility model is to provide a kind of LED encapsulating structure.
In order to achieve the above object, the utility model has adopted following technical scheme:
A kind of LED encapsulating structure, comprise LED chip, packaging plastic, base plate for packaging, and the bonding surface of this LED chip, this base plate for packaging and this packaging plastic is provided with the adhesive linkage of insulation.
As optimal technical scheme of the present utility model: the die bond layer between described LED chip and this base plate for packaging, itself and this bonding surface of packaging plastic is provided with the adhesive linkage of insulation.
As optimal technical scheme of the present utility model: the thickness of described tack coat is less than 1/4th of this LED chip emission wavelength.
As optimal technical scheme of the present utility model: the tack coat that described adhesive linkage is inorganic material.
As optimal technical scheme of the present utility model: the tack coat that described adhesive linkage is silicon dioxide or silicon nitride material.
Compared with prior art, at LED chip, base plate for packaging and packaging plastic, bonding surface arranges an adhesive linkage to the utility model, makes each position of the LED device of encapsulation have the consistent adhesive property that adheres to, and improves the reliability of LED device; Simultaneously, reduce the requirement to the packaging plastic adhesive property, reduce the cost of packaging plastic.
The accompanying drawing explanation
The encapsulating structure schematic diagram that Fig. 1 is packed LED chip in known technology.
The encapsulating structure schematic diagram that Fig. 2 is flip LED chips in known technology.
The schematic diagram that Fig. 3 is the utility model the first embodiment.
The schematic diagram that Fig. 4 is the utility model the second embodiment.
Fig. 5 is flow chart of steps one of the present utility model.
Fig. 6 is flow chart of steps two of the present utility model.
Embodiment
Embodiment mono-
In the present embodiment, it is preferred version that the LED chip of take adopts the LED chip of formal dress, is explained, but is not limited to this.
Refer to Fig. 3, the LED encapsulating structure shown in figure, comprise LED chip 102, packaging plastic 103, the base plate for packaging 101 of formal dress.This LED chip 102 directly is fixed on base plate for packaging 101, and this packaging plastic 103 coats this LED chip 102 fully.At this LED chip 102, this base plate for packaging 101 and this packaging plastic 103, bonding surface is provided with the adhesive linkage 104 of one deck insulation.
Preferably, the thickness of described tack coat 104 is less than 1/4th of these LED chip 102 emission wavelengths; The emission wavelength of LED chip commonly used according to current industry, the thickness of this tack coat 104 is generally less than 120 nanometers.This tack coat 104 can adopt inorganic material, preferably silicon dioxide or silicon nitride material.
Refer to Fig. 5, the method for packing of above-mentioned LED encapsulating structure, it comprises the following steps:
At first, the adhesive linkage 104 that respectively bonding Surface Creation one insulate at this LED chip 102, this base plate for packaging 101 and this packaging plastic 103.Wherein, the die bond zone (zone of fixed L ED chip) on this base plate for packaging 101 need be reserved, and does not need to generate adhesive linkage 104.
This adhesive linkage 104 can strengthen chemical vapour deposition technique (PECVD, Plasma-enhanced Chemical Vapor Deposition) generation by using plasma.Preferably, the thickness of this tack coat 104 is less than 1/4th of these LED chip 102 emission wavelengths; The emission wavelength of LED chip commonly used according to current industry, the thickness of this tack coat 104 is generally less than 120 nanometers.This tack coat 104 can adopt inorganic material, preferably silicon dioxide or silicon nitride material.Then, this LED chip 102 is fixed on to the die bond zone on this base plate for packaging 101; Finally, encapsulate this packaging plastic 103.
Perhaps, refer to Fig. 6, also can at first this LED chip 102 be fixed on to the die bond zone on this base plate for packaging 101.Then, at this LED chip 102, this base plate for packaging 101 and this packaging plastic 103, bonding surface generates respectively the adhesive linkage 104 of an insulation; Finally, encapsulate this packaging plastic 103.
Embodiment bis-
In the present embodiment, it is preferred version that the LED chip of take adopts the LED chip of upside-down mounting, is explained, but is not limited to this.
Refer to Fig. 4, the LED encapsulating structure shown in figure, comprise upside-down mounting LED chip 106, die bond layer 107(or, weld layer), packaging plastic 103, base plate for packaging 108.This LED chip 106 is fixed by die bond layer 107 and the welding disking area of base plate for packaging 108, and this packaging plastic 103 coats this LED chip 106 fully.At this LED chip 106, this base plate for packaging 108 and this packaging plastic 103, bonding surface is provided with the adhesive linkage 104 of one deck insulation.For further making LED chip, base plate for packaging have the consistent adhesive property that adheres to packaging plastic, preferably, the bonding surface (being the lateral surface of die bond layer 107 shown in figure) of die bond layer 107 and this packaging plastic 103 is provided with the adhesive linkage 104 of insulation.
Preferably, the thickness of above-mentioned tack coat 104 is less than 1/4th of these LED chip 106 emission wavelengths; The emission wavelength of LED chip commonly used according to current industry, the thickness of this tack coat 104 is generally less than 120 nanometers.This tack coat 104 can adopt inorganic material, preferably silicon dioxide or silicon nitride material.
Refer to Fig. 5, the method for packing of above-mentioned LED encapsulating structure, it comprises the following steps:
At first, the adhesive linkage 104 that respectively bonding Surface Creation one insulate at this LED chip 106, this base plate for packaging 108 and this packaging plastic 103.Wherein, the welding disking area on this base plate for packaging 108 (zone of fixed L ED chip) need be reserved, and does not need to generate adhesive linkage 104.
This adhesive linkage 104 can strengthen chemical vapour deposition technique (PECVD, Plasma-enhanced Chemical Vapor Deposition) generation by using plasma.Preferably, the thickness of this tack coat 104 is less than 1/4th of these LED chip 106 emission wavelengths; The emission wavelength of LED chip commonly used according to current industry, the thickness of this tack coat 104 is generally less than 120 nanometers.This tack coat 104 can adopt inorganic material, preferably silicon dioxide or silicon nitride material.Then, this LED chip 106 is fixed on to the welding disking area on this base plate for packaging 108; Finally, encapsulate this packaging plastic 103.
The LED chip 106 of upside-down mounting is fixed by die bond layer 107 and the welding disking area of base plate for packaging 108, while adopting above-mentioned method for packing to be encapsulated the encapsulating structure that adopts flip LED chips, because being first generates tack coat 104 at LED chip 106 and base plate for packaging 108, and then carry out die bond, so the bonding surface of die bond layer 107 and this packaging plastic 103 can't generate tack coat 104.In actual package is produced, for making the bonding Surface Creation tack coat 104 of die bond layer 107 and this packaging plastic 103, the preferred following method for packing of flip LED chips, refer to Fig. 6, can at first to LED chip 106, carry out the die bond operation, make LED chip 106 be fixed on the welding disking area of base plate for packaging 108 by die bond layer 107; Then, at the die bond layer 107 of 108 of this LED chip 106, this LED chip 106 and this base plate for packaging, this base plate for packaging 108 and this packaging plastic 103, bonding surface generates respectively the adhesive linkage 104 of an insulation; Finally, encapsulate this packaging plastic 103.
The foregoing is only preferred embodiment of the present utility model, not be used for limiting practical range of the present utility model; Every equivalence of doing according to the utility model changes and revises, and all by the scope of the utility model claims, is covered.
Claims (5)
1. a LED encapsulating structure, comprise LED chip, packaging plastic, base plate for packaging, it is characterized in that: the bonding surface of this LED chip, this base plate for packaging and this packaging plastic is provided with the adhesive linkage of insulation.
2. a kind of LED encapsulating structure according to claim 1, it is characterized in that: the die bond layer between described LED chip and this base plate for packaging, itself and this bonding surface of packaging plastic is provided with the adhesive linkage of insulation.
3. a kind of LED encapsulating structure according to claim 1 and 2, it is characterized in that: the thickness of described tack coat is less than 1/4th of this LED chip emission wavelength.
4. a kind of LED encapsulating structure according to claim 1 and 2, is characterized in that: the tack coat that described adhesive linkage is inorganic material.
5. a kind of LED encapsulating structure according to claim 4, is characterized in that: the tack coat that described adhesive linkage is silicon dioxide or silicon nitride material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320295265 CN203351646U (en) | 2013-05-24 | 2013-05-24 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320295265 CN203351646U (en) | 2013-05-24 | 2013-05-24 | LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203351646U true CN203351646U (en) | 2013-12-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320295265 Expired - Lifetime CN203351646U (en) | 2013-05-24 | 2013-05-24 | LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203351646U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346234A (en) * | 2013-05-24 | 2013-10-09 | 大连德豪光电科技有限公司 | LED packaging structure and packaging method thereof |
| CN105720182A (en) * | 2015-09-27 | 2016-06-29 | 重庆品鉴光电工程有限公司 | Novel LED sapphire support |
-
2013
- 2013-05-24 CN CN 201320295265 patent/CN203351646U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346234A (en) * | 2013-05-24 | 2013-10-09 | 大连德豪光电科技有限公司 | LED packaging structure and packaging method thereof |
| CN105720182A (en) * | 2015-09-27 | 2016-06-29 | 重庆品鉴光电工程有限公司 | Novel LED sapphire support |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131218 |
|
| CX01 | Expiry of patent term |