CN105720182A - Novel LED sapphire support - Google Patents
Novel LED sapphire support Download PDFInfo
- Publication number
- CN105720182A CN105720182A CN201510620597.4A CN201510620597A CN105720182A CN 105720182 A CN105720182 A CN 105720182A CN 201510620597 A CN201510620597 A CN 201510620597A CN 105720182 A CN105720182 A CN 105720182A
- Authority
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- China
- Prior art keywords
- sapphire
- wafer
- led
- chip
- new led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 73
- 239000010980 sapphire Substances 0.000 title claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 230000000630 rising effect Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 230000007246 mechanism Effects 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 238000010074 rubber mixing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 241000218202 Coptis Species 0.000 description 6
- 235000002991 Coptis groenlandica Nutrition 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a novel LED sapphire support. The novel LED sapphire support comprises a sapphire wafer, a metal line and LED chips, wherein the sapphire wafer is provided with the metal line, the metal line is provided with the multiple LED chips, and the light emitting angles of the LED chips are 0-360 degrees. The sapphire wafer is also plated with a metallic film, and a conventional gold line connection mode is replaced. The novel LED sapphire support is high in luminescence efficiency, good in transmittance and low in cost, and improves the yield of a product manufacturing process and the product reliability.
Description
Technical field
The present invention relates to LED support technical field, be specifically related to a kind of New LED sapphire support.
Background technology
LED cooling stand itself has preferably heat conductivity mainly by its cooling stand material, is derived from LED grain by thermal source.Therefore, we are from LED sinking path, LED cooling stand can be segmented two big classifications, respectively system circuit board and LED grain support, and LED grain support is the core component of LED heat radiation.LED grain support is broadly divided into ceramics bracket (aluminium oxide ceramics and aluminium nitride ceramics) and two kinds of thin-film ceramics support.
Ceramics bracket (Al2O3/ AlN) feature be that heat dispersion is good, pyroconductivity is about 24 ~ 170W/mk, and thickness is thin, size is little, its serviceable bife length, can anticorrosive, high temperature resistant, physical characteristic is stable, it is adaptable to high-capacity LED.
Thin-film ceramics support maximum operating temp, up to 800 DEG C, is suitable for High Operating Temperature, perfect heat-dissipating.
How reducing the thermal resistance of LED grain cooling stand and be effectively improved luminous efficiency for promoting one of LED over-all quantum efficiency major subjects at present, current technology Problems existing is as follows:
1, the wire mark mode of current more use be printed on support by circuit to exist because of half tone throw the net problem produce that circuit is coarse, para-position not phenomenon accurately, and all there is the tension force that causes inconsistent with crystal grain coefficient of thermal expansion in cooling stand, affect very much life-span and the quality of LED, and LED will require that size is more and more less in future, line requirements is increasingly finer, and this just requires LED cooling stand has excellent heat dispersion, metallic circuit adhesion property is good and crystal grain is close coefficient of thermal expansion, surfacing, good stability；
2, MCPCB substrate, ceramic substrate or the DCB substrates etc. commonly used at present, owing to material self light transmission is poor, the light that active layer sends can only send from the top of support, causes that LED light extraction efficiency is relatively low, for improving amount of light, it is necessary to increases reflector layer on substrate；
3, in conventional LED chip encapsulating structure, for obtaining good current expansion, requiring over evaporation coating technique and form layer of metal electrode layer on surface, P district, the existence of metal level can affect and make printing opacity newly can be deteriorated, and the existence of lead solder-joint also makes the light extraction efficiency of device be affected；
4, being generally connected by gold thread between multi-chip structure chips electrode to connect, solder joint is in the operation of follow-up painting fluorescent material, or in use procedure, vibrations are likely to cause solder joint and come off, and make product failure.
Summary of the invention
For the deficiency existed in prior art, the present invention seeks to be in that to provide a kind of New LED sapphire support, luminous efficiency is high, and light transmission is good, and cost is low, improves the yields of manufacture course of products and the reliability of product.
To achieve these goals, the present invention realizes by the following technical solutions: New LED sapphire support, including sapphire wafer, metallic circuit, LED chip, sapphire wafer is provided with metallic circuit, being provided with multiple LED chip on metallic circuit, the rising angle of described LED chip is 0-360 °.
As preferably, described sapphire wafer going back metal-plated membrane, instead of traditional gold thread connected mode.
As preferably, the roughness of described sapphire wafer is at Ra0.1-400nm, and thickness is 0.2-2mm.
As preferably, described New LED sapphire support uses the means of vacuum evaporation metallic film to carry out sapphire surface coating, vacuum evaporation coating membrane technology is in vacuum environment, material is heated and is plated on substrate, material to be filmed is placed in vacuum and is evaporated or distils by it, so as to the process precipitated out at workpiece or substrate surface.
As preferably, the metal film of described New LED sapphire rack surface plating can adopt all reasonable metal of the electric conductivity such as aluminum, copper and heat conductivity and alloy, facilitates the making of metallic circuit, and the processing technology of metallic circuit is similar with conventional ceramic substrate.
As preferably, the fixing means of the described LED chip on New LED sapphire support is: sapphire support is sent to operating position, first sapphire support will be needed the location point glue of bonding chip by point gum machine, then bonding arm moves to absorption chip position from origin position, chip is placed on the dilator wafer disk of film support, after bonding arm puts in place, suction nozzle moves downward, move upward jack-up chip, after pickup wafer, bonding arm returns origin position (leakage crystalline substance detection position), bonding arm moves to bonding position from origin position again, it is bonded arm after suction nozzle downbond wafer and again returns to origin position, it it is thus a complete die bond process.
As preferably, fluorescent material is mixed homogeneously by a certain percentage by described New LED sapphire support with thermal plastic insulation on rubber mixing machine, and it is pressed into certain thickness phosphor laminate by press mold mechanism, with automatic adhesive sticking machine by phosphor laminate to be coated on sapphire wafer in the way of pad pasting, relatively conventional technique is saved cost and can improve and light quality.
Beneficial effects of the present invention: the light extraction efficiency of (1), LED encapsulating products dramatically increases, owing to sapphire support light transmission is good, the MCPCB substrate of traditional demifacet printing opacity, ceramic substrate or DCB substrate, light extraction efficiency is improved by increasing reflector layer on substrate, increase operation, effect is also undesirable, uses sapphire support to compare traditional demifacet printing opacity and substantially has better luminous efficiency；
(2), sapphire substrate insulation, do not need dielectric layer, traditional LED chip encapsulation process needs the thermal diffusivity and the reliability that use heat sink, insulating barrier etc. to improve product, the insulating properties of sapphire substrate own are good, use upside-down mounting mode to encapsulate and can be effectively improved its heat dispersion, therefore use sapphire substrate to simplify LED packaging process further, reduce cost；
(3), sapphire support light transmission is good, the rising angle of LED module is close to 360 degree, and traditional LED product often can only go out light by demifacet, it is impossible to realizes LED and goes out effective utilization of light, the use of sapphire support makes LED product almost full angle go out light, more convenient use；
(4), sapphire is identical with substrates for epitaxy material conducts heat rate, can effectively support chip, avoid producing tension force, substrate used by general LED extension is Sapphire Substrate, sapphire is used to do support, it is almost identical with the thermal coefficient of expansion of LED grain, can the support crystal grain of high stability, it is to avoid because of the hot tensile strength impact on product reliability between crystal grain and support；
(5), mode at sapphire surface direct plating metal film replaces tradition gold thread connected mode, product reliability is improved while reducing cost, generally it is connected by gold thread between multi-chip structure chips electrode to connect, solder joint is in the operation of follow-up painting fluorescent material, or vibrations are likely to cause solder joint and come off in use procedure, make product failure, sapphire support technology adopts the mode of direct plating metal film to replace traditional chip electrode connected mode, reduce cost on the one hand, avoid the problem that gold thread falls off when meeting with significant shock on the other hand, improve the yields of manufacture course of products and the reliability of product.
Accompanying drawing explanation
The present invention is described in detail below in conjunction with the drawings and specific embodiments；
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the top view of Fig. 1.
Detailed description of the invention
For the technological means making the present invention realize, creation characteristic, reach purpose and effect and be easy to understand, below in conjunction with detailed description of the invention, the present invention is expanded on further.
With reference to Fig. 1-2, this detailed description of the invention is by the following technical solutions: New LED sapphire support, including sapphire wafer 1, metallic circuit 2, LED chip 3, sapphire wafer 1 is provided with metallic circuit 2, being provided with multiple LED chip 3 on metallic circuit 2, the rising angle of described LED chip 3 is 0-360 °.
It should be noted that and described sapphire wafer 1 goes back metal-plated membrane, instead of traditional gold thread connected mode.
Additionally, the roughness of described sapphire wafer 1 is at Ra0.1-400nm, thickness is 0.2-2mm.
Specific embodiment of the invention sapphire wafer needs just to be used as the making of metal film and metallic circuit in LED support through certain Surface Machining, generally sapphire needs to meet roughness at Ra0.1-400nm, and thickness range just can produce stable metallic circuit at 0.2-2mm.
The quality of sapphire wafer directly affects the technical performance of corresponding product.For producing high-quality sapphire wafer, it is necessary to the processing method continuously improving sapphire wafer, find significantly more efficient manufacturing process.Sapphire wafer processing method common at present has grinding, machine glazed finish, dry-type mechanical chemical polishing, wet type mechanochemistry and chemically mechanical polishing, hydration polishing, floating polishing etc., the present invention is intended that and with chemical means, sapphire is processed, chemical method is simple to operation, the most important thing is that treatment effect is more uniform, sapphire support after Surface Machining is carried out AFM(atomic force microscope), TEM(transmission electron microscope), SEM(scanning electron microscope) etc. characterized by techniques, it is ensured that sapphire processing after surface meet the requirements.
The present invention uses the means of vacuum evaporation metallic film to carry out sapphire surface coating, vacuum evaporation coating membrane technology is in vacuum environment, material is heated and is plated on substrate, material to be filmed is placed in vacuum and is evaporated or distils by it, so as to the process precipitated out at workpiece or substrate surface, it is uniform that this technology has plated film, efficient advantage, this project is intended to adopt aluminum at the metal film of sapphire rack surface plating, the all reasonable metal of the electric conductivity such as copper and heat conductivity and alloy, facilitate the making of metallic circuit, the processing technology of metallic circuit is similar with conventional ceramic substrate.
Sapphire support is sent to operating position, first sapphire support will be needed the location point glue of bonding chip by point gum machine, then bonding arm moves to absorption chip position from origin position, chip is placed on the dilator wafer disk of film support, after bonding arm puts in place, suction nozzle moves downward, move upward jack-up chip, after pickup wafer, bonding arm returns origin position (leakage crystalline substance detection position), bonding arm moves to bonding position from origin position again, it is bonded arm after suction nozzle downbond wafer and again returns to origin position, be thus a complete die bond process.
Fluorescent material is mixed homogeneously by a certain percentage by the present invention with thermal plastic insulation on rubber mixing machine, and it is pressed into certain thickness phosphor laminate by press mold mechanism, with automatic adhesive sticking machine by phosphor laminate to be coated on sapphire wafer in the way of pad pasting, relatively conventional technique is saved cost and can improve and light quality.
The ultimate principle of the present invention and principal character and advantages of the present invention have more than been shown and described.Skilled person will appreciate that of the industry; the present invention is not restricted to the described embodiments; described in above-described embodiment and description is that principles of the invention is described; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements both fall within the claimed scope of the invention.Claimed scope is defined by appending claims and equivalent thereof.
Claims (7)
1. New LED sapphire support, it is characterized in that, including sapphire wafer (1), metallic circuit (2), LED chip (3), sapphire wafer (1) is provided with metallic circuit (2), being provided with multiple LED chip (3) on metallic circuit (2), the rising angle of described LED chip (3) is 0-360 °.
2. New LED sapphire support according to claim 1, it is characterised in that go back metal-plated membrane on described sapphire wafer (1).
3. New LED sapphire support according to claim 1, it is characterised in that the roughness of described sapphire wafer (1) is at Ra0.1-400nm, and thickness is 0.2-2mm.
4. New LED sapphire support according to claim 1, it is characterized in that, described New LED sapphire support uses the means of vacuum evaporation metallic film to carry out sapphire surface coating, vacuum evaporation coating membrane technology is in vacuum environment, material is heated and is plated on substrate, material to be filmed is placed in vacuum and is evaporated or distils by it, so as to the process precipitated out at workpiece or substrate surface.
5. New LED sapphire support according to claim 1, it is characterised in that the metal film of described New LED sapphire rack surface plating adopts aluminum, copper metal or alloy.
6. New LED sapphire support according to claim 1, it is characterized in that, the fixing means of the described LED chip (3) on New LED sapphire support is: sapphire support is sent to operating position, first sapphire support will be needed the location point glue of bonding chip by point gum machine, then bonding arm moves to absorption chip position from origin position, chip is placed on the dilator wafer disk of film support, after bonding arm puts in place, suction nozzle moves downward, move upward jack-up chip, after pickup wafer, bonding arm returns origin position, bonding arm moves to bonding position from origin position again, it is bonded arm after suction nozzle downbond wafer and again returns to origin position, it it is thus a complete die bond process.
7. New LED sapphire support according to claim 1, it is characterized in that, fluorescent material is mixed homogeneously by a certain percentage by described New LED sapphire support with thermal plastic insulation on rubber mixing machine, and it is pressed into certain thickness phosphor laminate by press mold mechanism, with automatic adhesive sticking machine by phosphor laminate to be coated on sapphire wafer in the way of pad pasting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510620597.4A CN105720182A (en) | 2015-09-27 | 2015-09-27 | Novel LED sapphire support |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510620597.4A CN105720182A (en) | 2015-09-27 | 2015-09-27 | Novel LED sapphire support |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105720182A true CN105720182A (en) | 2016-06-29 |
Family
ID=56144952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510620597.4A Pending CN105720182A (en) | 2015-09-27 | 2015-09-27 | Novel LED sapphire support |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105720182A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987085A (en) * | 2020-08-21 | 2020-11-24 | 上海天马微电子有限公司 | Sensor, preparation method of sensor and electronic equipment |
| CN112909152A (en) * | 2021-01-22 | 2021-06-04 | 深圳市鑫业新光电有限公司 | Adhesive film packaging process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969438A (en) * | 2012-12-21 | 2013-03-13 | 左洪波 | Sapphire bracket for LED (Light-Emitting Diode) |
| CN203351646U (en) * | 2013-05-24 | 2013-12-18 | 大连德豪光电科技有限公司 | LED packaging structure |
| CN104183584A (en) * | 2014-08-19 | 2014-12-03 | 中国科学院半导体研究所 | LED array light source structure |
-
2015
- 2015-09-27 CN CN201510620597.4A patent/CN105720182A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969438A (en) * | 2012-12-21 | 2013-03-13 | 左洪波 | Sapphire bracket for LED (Light-Emitting Diode) |
| CN203351646U (en) * | 2013-05-24 | 2013-12-18 | 大连德豪光电科技有限公司 | LED packaging structure |
| CN104183584A (en) * | 2014-08-19 | 2014-12-03 | 中国科学院半导体研究所 | LED array light source structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987085A (en) * | 2020-08-21 | 2020-11-24 | 上海天马微电子有限公司 | Sensor, preparation method of sensor and electronic equipment |
| CN112909152A (en) * | 2021-01-22 | 2021-06-04 | 深圳市鑫业新光电有限公司 | Adhesive film packaging process |
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| C06 | Publication | ||
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Application publication date: 20160629 |