CN101315913A - Light packaging member of power machine with high heat transfer efficiency - Google Patents
Light packaging member of power machine with high heat transfer efficiency Download PDFInfo
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- CN101315913A CN101315913A CN 200810038868 CN200810038868A CN101315913A CN 101315913 A CN101315913 A CN 101315913A CN 200810038868 CN200810038868 CN 200810038868 CN 200810038868 A CN200810038868 A CN 200810038868A CN 101315913 A CN101315913 A CN 101315913A
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- heat
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- radiating substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention relates to the technical field of packaging structures of power devices, in particular to a packaging part of a power device with light weight and high efficiency of thermal conductivity, which is characterized in that: an upper high thermal conductivity bonding interface layer, a heat sink thin film, a lower high thermal conductivity bonding interface layer and a radiating substrate are sequentially bonded on the back surface of a chip from top to bottom to form the packaging part; and the radiating substrate adopts high thermal conductivity graphite flake or high thermal conductivity nano-carbon tube/fiber composite material or high thermal conductivity pitch-based carbon-carbon composite material or carbon-copper or carbon-aluminum composite material, or aluminum-based or copper-based silicon carbide or boron nitride or aluminum nitride or silicon nitride ceramic composite material. Compared with the prior art, the back surface of the chip of the invention is directly bonded with the bonding film, the heat sink layer and the radiating substrate, when in work, the heat on the chip is directly guided out of a working region by the three-layer radiating structure, thus enhancing the radiation performance of the product, effectively reducing the heat stress between the chip and the radiating substrate and improving the reliability and the service life of the device.
Description
[technical field]
The present invention relates to power device encapsulating structure technical field, a kind of specifically packaging part of power device of light high heat conducting efficient.
[technical background]
Encapsulation field at integrated circuit, three development trends of encapsulation technology: the dwindling of size, function conversion and the raising of performance, the fusion of technology, along with the dense degree of integrated circuit in continuous increase, package dimension is constantly diminishing simultaneously, the heat that causes chip to produce is just more and more concentrated, the heat how effective loss semiconductor chip produces at work with useful life and the reliability of guaranteeing semiconductor chip, is a big problem of semiconductor packages industry always.
In the existing packing forms, because material that many packing colloids in order to the coating semiconductor chip all are poor thermal conductivity such as epoxy resin etc., because the conductive coefficient of capsulation material is not high, the heat that chip produces can not in time distribute, caused the chip operation temperature too high easily, make the reliability decrease of chip operation, chip power is restricted; Though and some packing forms can improve heat dispersion, cost is very high.So in semiconductor package part, add heat sink or heat-radiating substrate,, be present existing possible technique with heat-radiating substrate and the heat sink raising radiating efficiency of making by the good metal material of thermal diffusivity.
No. 5726079 and No. 5471366 and Chinese ZL01139258.4 in the U.S., ZL01129362.4, proposed to adopt the technology of heat-radiating substrate encapsulation in the patent such as ZL03121320.0 and ZL200510065667.0 respectively, this existing packaging part is directly to paste heat-radiating substrate on chip, the end face of this heat-radiating substrate exposes outside in order to coat the packing colloid of cover core sheet, because chip is direct and the heat-radiating substrate gluing, and the end face of heat-radiating substrate exposes outside packing colloid and directly contacts with atmosphere, so the heat that chip produces can directly be passed to heat-radiating substrate with loss to atmosphere, its heat radiation approach packing colloid that needn't stimulate the menstrual flow.But, how this type of technology is made by heat cured material, before not being heating and curing in order to the adhesive or the gluing paster of gluing chip and heat-radiating substrate, adhesive or gluing paster are soft state, make chip and heat-radiating substrate cohere the back formed structure height wayward; Simultaneously, in encapsulation process, be formed with excessive glue easily, thereby influence the radiating efficiency of heat-radiating substrate, and packaging cost can't be reduced on the heat-radiating substrate surface; Because the contact heat resistance of adhesive or gluing paster and chip chamber, in big electric current was used, the moment heat of chip gathered on the interface, and chip reliability and life-span are reduced; In addition, adopt heavier heat dissipation metal substrate such as copper etc., when device is worked, increase, chip and heat radiation are separated from substantially and cause component failure because of variation of temperature causes stress.
[summary of the invention]
The objective of the invention is design and overcome the deficiencies in the prior art, adopt the alternative high-density metal substrates of composite material such as light high heat conducting nano carbon, the thermal stress that produces when reducing chip operation, and adopt the bonding means to connect current material, solved problem such as use that when plastic packaging high interface resistance that heat-conductive bonding agent or gluing paster cause and distortion are moved.
For achieving the above object, design a kind of packaging part of power device of light high heat conducting efficient, comprise chip, heat-radiating substrate, it is characterized in that: by chip back from top to bottom successively high heat conduction bonded interface layer, heat sink film on the bonding, high heat conduction bonded interface layer, heat-radiating substrate constitute down; Wherein said heat-radiating substrate adopts high conductive graphite sheet or high heat conducting nano carbon pipe/fibrous composite or high thermal conductive asphalt base carbon-carbon composite, or carbon-copper or carbon-aluminium composite material, or the ceramic composite of the carborundum of aluminium base or copper base or boron nitride or aluminium nitride or silicon nitride.Described upper and lower high heat conduction bonded interface layer and employing thickness are the metal or the metal compound film material of the electric-conductivity heat-conductivity high of 10-100 nanometer, as metallic film Sn, In, Zn, Au, Ag, Cu, Ti, Ni, Fe, Co, Pd, Al, Mo or metal compound film CuIn, AgIn, AuIn, InSn, above-mentioned any one material of AgSn, AuSn.Described heat sink film, if chip is connected for insulation with heat-radiating substrate, heat sink film adopts polycrystalline diamond films, if chip is connected for conduction with heat-radiating substrate, heat sink film adopts aligned carbon nanotube film or orientated nano fibers film.When described heat sink film adopted aligned carbon nanotube film or orientated nano fibers film, following high heat conduction bonded interface layer adopted Fe or Co or Ni or Cu or Pd or Ti or Mo material.
The present invention compared with prior art, chip back and bonding film, heat-sink shell and heat-radiating substrate are directly connect, heat when making work on the chip is directly derived the working region by three layers of radiator structure, so the chip that is fixed on the heat-conducting layer can be kept certain working temperature, promoted the heat dispersion of product, more can reduce the thermal stress between chip and heat-radiating substrate effectively, improve the reliability and the useful life of device.
[description of drawings]
Fig. 1 is a kind of structural representation in the embodiment of the invention.
Appointment Fig. 1 is a Figure of abstract.
Referring to Fig. 1, wherein, 1 is chip; 2 is last high heat conduction bonded interface layer; 3 is heat sink film; 4 are following high heat conduction bonded interface layer; 5 is heat-radiating substrate.
[embodiment]
The invention will be further described below in conjunction with accompanying drawing, and this technology is still more clearly concerning this professional people.
Embodiment 1
Referring to accompanying drawing 1, by chip 1 back side from top to bottom successively high heat conduction bonded interface layer 2, heat sink film 3 on the bonding, high heat conduction bonded interface layer 4, heat-radiating substrate 5 constitute down, wherein,
Bonded interface layer 2 and 4 comprises Sn, In for having good heat conductive electric conductivity metal and alloy material thereof, Zn, Au, Ag, Cu, Ti, Ni, Al, Mo and alloy thereof such as CuIn, AgIn, AuIn, InSn, AgSn, AuSn etc., above-mentioned bonded interface layer adopts method preparations such as magnetron sputtering, evaporation, chemical deposition; Bonded interface layer 2 and 4 is thinner, and the about 10-100 nanometer of thickness has high thermal conductivity, is easy to chip 1 and heat sink film 3 welding.
Heat sink film 3, employing has the light material of high orientation heat conductivility, adopt materials such as insulation highly heat-conductive material diamond thin, heat sink thin-film material mainly adopts method preparations such as hot filament CVD, plasma chemical vapor deposition, wherein the thermal conductivity of diamond thin is 600-2500W/m*K, has good insulation performance.
Heat-radiating substrate 5, substrate as Chip Packaging, this layer material can be selected high conductive graphite sheet, high heat conducting nano carbon pipe/fibrous composite, high thermal conductive asphalt base carbon-carbon composite, carbon-carbon/carbon-copper composite material, carbon-aluminium composite material, any in the ceramic composite of aluminium base or copper base silicon carbide, boron nitride, aluminium nitride, silicon nitride has the characteristics of good heat conductivity, light weight.
In this example, bonded interface layer 2 is low with heat sink film 3 interface resistances; Bonded interface layer 4 has metallicity, with heat-sink shell 3 and heat radiation lamella 5 good associativity is arranged respectively, and connects by bonding method, and thermal conductivity is good.
Embodiment 2
Bonded interface layer among the embodiment 14 material selection metallic film are comprised Fe or Co or Ni or Cu or Pd or Ti or Mo material, and thickness is the 5-50 nanometer.Can adopt methods such as sputter, plating, chemical plating, electron beam evaporation directly to prepare bonded interface layer 4 on heat-radiating substrate 5 surfaces, the heat sink film 3 of direct growth comprises materials such as conduction highly-conductive hot carbon nano pipe film, carbon nano-fiber film then.The heat sink film 3 main methods such as hot filament CVD, plasma chemical vapor deposition or arc plasma deposition method that adopt prepare, and wherein the thermal conductivity of aligned carbon nanotube is 600-2000W/m*K, has good electrical conductivity.
The material technology of heat-radiating substrate 5 is same as embodiment 1.
In this example, bonded interface layer 4 has metallicity when having the growth catalytic action, with heat-sink shell 3 and heat radiation lamella 5 good associativity is arranged respectively, and connects by bonding method, and thermal conductivity is good.The encapsulating structure of this example is identical with embodiment 1.
Claims (4)
1, a kind of packaging part of power device of light high heat conducting efficient, comprise chip, heat-radiating substrate, it is characterized in that: by chip (1) back side from top to bottom successively high heat conduction bonded interface layer (2), heat sink film (3) on the bonding, high heat conduction bonded interface layer (4), heat-radiating substrate (5) constitute down; Wherein said heat-radiating substrate (5) adopts high conductive graphite sheet or high heat conducting nano carbon pipe/fibrous composite or high thermal conductive asphalt base carbon-carbon composite, or carbon-copper or carbon-aluminium composite material, or the ceramic composite of the carborundum of aluminium base or copper base or boron nitride or aluminium nitride or silicon nitride.
2, the packaging part of the power device of a kind of light high heat conducting efficient as claimed in claim 1, it is characterized in that: it is the metal or the metal compound film material of the electric-conductivity heat-conductivity high of 10-100 nanometer that thickness is adopted in described upper and lower high heat conduction bonded interface layer (2) and (4), as metallic film Sn, In, Zn, Au, Ag, Cu, Ti, Ni, Fe, Co, Pd, Al, Mo or metal compound film CuIn, AgIn, AuIn, InSn, above-mentioned any one material of AgSn, AuSn.
3, the packaging part of the power device of a kind of light high heat conducting efficient as claimed in claim 1, it is characterized in that: described heat sink film (3), if chip (1) is connected for insulation with heat-radiating substrate (5), heat sink film (3) adopts polycrystalline diamond films, if chip (1) is connected for conduction with heat-radiating substrate (5), heat sink film (3) adopts aligned carbon nanotube film or orientated nano fibers film.
4, as the packaging part of the power device of claim 1 or 3 described a kind of light high heat conducting efficient, it is characterized in that: when described heat sink film (3) adopted aligned carbon nanotube film or orientated nano fibers film, following high heat conduction bonded interface layer (4) adopted Fe or Co or Ni or Cu or Pd or Ti or Mo material.
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| CN 200810038868 CN101315913A (en) | 2008-06-12 | 2008-06-12 | Light packaging member of power machine with high heat transfer efficiency |
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| CN 200810038868 CN101315913A (en) | 2008-06-12 | 2008-06-12 | Light packaging member of power machine with high heat transfer efficiency |
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| CN101315913A true CN101315913A (en) | 2008-12-03 |
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| CN 200810038868 Pending CN101315913A (en) | 2008-06-12 | 2008-06-12 | Light packaging member of power machine with high heat transfer efficiency |
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Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840746A (en) * | 2009-03-18 | 2010-09-22 | 伊顿公司 | The electric interface that contains nano-particle layer |
| CN102299053A (en) * | 2010-06-22 | 2011-12-28 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| CN102544343A (en) * | 2012-03-02 | 2012-07-04 | 杭州电子科技大学 | Method for improving heat-dissipating performance of LED substrate |
| CN102651446A (en) * | 2011-02-25 | 2012-08-29 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) package structure and light source device |
| CN102840488A (en) * | 2012-09-11 | 2012-12-26 | 广东宏泰照明科技有限公司 | LED lamp provided with heat dissipation function |
| CN102856272A (en) * | 2011-06-27 | 2013-01-02 | 北京兆阳能源技术有限公司 | Insulating and radiating electronic subassembly |
| CN102967725A (en) * | 2012-12-03 | 2013-03-13 | 东南大学 | Thermal wind speed sensor encapsulated based on carbon nanotube array |
| CN103219251A (en) * | 2013-04-08 | 2013-07-24 | 上海上大瑞沪微系统集成技术有限公司 | Method for packaging large-size chip by using metal-based nano fiber composite heat dissipation material |
| CN103232256A (en) * | 2013-03-01 | 2013-08-07 | 西北工业大学 | Method for improving connection performances of C/C composite material-Li-Al-Si ceramic joint |
| CN103441109A (en) * | 2013-06-19 | 2013-12-11 | 日月光半导体制造股份有限公司 | Semiconductor element, semiconductor packaging structure and manufacturing method thereof |
| CN104465540A (en) * | 2014-12-22 | 2015-03-25 | 永新电子常熟有限公司 | Electronic chip with good stability |
| CN104733399A (en) * | 2013-12-24 | 2015-06-24 | 北京有色金属研究总院 | Layer-shaped high thermal conductive and insulating base plate and preparation method thereof |
| CN104896452A (en) * | 2015-06-11 | 2015-09-09 | 固态照明张家口有限公司 | Heat dissipation material, LED spot light radiator based on same, and LED spot light |
| CN105023990A (en) * | 2014-04-30 | 2015-11-04 | 严敏 | Method of manufacturing LED laminated circuit board based on inorganic substances |
| CN105322910A (en) * | 2014-07-16 | 2016-02-10 | 精工爱普生株式会社 | Package base, package, electronic device, electronic apparatus, and moving object |
| CN105374925A (en) * | 2014-08-22 | 2016-03-02 | 严敏 | Inorganic substance-based LED epitaxy lamination circuit board and preparation method thereof |
| CN109371303A (en) * | 2018-11-07 | 2019-02-22 | 中国科学院宁波材料技术与工程研究所 | Heat-conductive composite material and preparation method thereof, radiating piece |
| CN109643880A (en) * | 2016-08-30 | 2019-04-16 | 特拉迪欧德公司 | It is encapsulated using the high power laser light of carbon nanotube |
| CN110513606A (en) * | 2018-10-29 | 2019-11-29 | 永康市道可道科技有限公司 | Outdoor LED lamp mosquito repellent system |
| CN111584346A (en) * | 2020-05-28 | 2020-08-25 | 浙江大学 | GaN device with heat sink structure and preparation method thereof |
| CN112038457A (en) * | 2020-09-11 | 2020-12-04 | 扬州乾照光电有限公司 | Flip red light LED chip and manufacturing method thereof |
| CN116093046A (en) * | 2023-04-10 | 2023-05-09 | 北京华封集芯电子有限公司 | Preparation method of single chip and chip structure |
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2008
- 2008-06-12 CN CN 200810038868 patent/CN101315913A/en active Pending
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840746A (en) * | 2009-03-18 | 2010-09-22 | 伊顿公司 | The electric interface that contains nano-particle layer |
| CN101840746B (en) * | 2009-03-18 | 2015-06-03 | 伊顿公司 | Electrical interfaces including a nano-particle layer |
| CN102299053B (en) * | 2010-06-22 | 2014-04-02 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| CN102299053A (en) * | 2010-06-22 | 2011-12-28 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| CN102651446A (en) * | 2011-02-25 | 2012-08-29 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) package structure and light source device |
| CN102651446B (en) * | 2011-02-25 | 2014-12-10 | 展晶科技(深圳)有限公司 | Light emitting diode (LED) package structure and light source device |
| CN102856272A (en) * | 2011-06-27 | 2013-01-02 | 北京兆阳能源技术有限公司 | Insulating and radiating electronic subassembly |
| CN102544343A (en) * | 2012-03-02 | 2012-07-04 | 杭州电子科技大学 | Method for improving heat-dissipating performance of LED substrate |
| CN102840488A (en) * | 2012-09-11 | 2012-12-26 | 广东宏泰照明科技有限公司 | LED lamp provided with heat dissipation function |
| CN102967725A (en) * | 2012-12-03 | 2013-03-13 | 东南大学 | Thermal wind speed sensor encapsulated based on carbon nanotube array |
| CN102967725B (en) * | 2012-12-03 | 2014-06-11 | 东南大学 | Thermal wind speed sensor encapsulated based on carbon nanotube array |
| CN103232256A (en) * | 2013-03-01 | 2013-08-07 | 西北工业大学 | Method for improving connection performances of C/C composite material-Li-Al-Si ceramic joint |
| CN103219251A (en) * | 2013-04-08 | 2013-07-24 | 上海上大瑞沪微系统集成技术有限公司 | Method for packaging large-size chip by using metal-based nano fiber composite heat dissipation material |
| CN103219251B (en) * | 2013-04-08 | 2015-09-23 | 上海上大瑞沪微系统集成技术有限公司 | A kind of method using metal-based nano fiber composite heat sink material to encapsulate large size chip |
| CN103441109A (en) * | 2013-06-19 | 2013-12-11 | 日月光半导体制造股份有限公司 | Semiconductor element, semiconductor packaging structure and manufacturing method thereof |
| CN103441109B (en) * | 2013-06-19 | 2016-06-08 | 日月光半导体制造股份有限公司 | Method for manufacturing semiconductor packaging structure |
| CN104733399A (en) * | 2013-12-24 | 2015-06-24 | 北京有色金属研究总院 | Layer-shaped high thermal conductive and insulating base plate and preparation method thereof |
| CN105023990B (en) * | 2014-04-30 | 2018-03-23 | 环视先进数字显示无锡有限公司 | A kind of manufacture method of the composite LED laminated circuit board based on inorganic matter |
| CN105023990A (en) * | 2014-04-30 | 2015-11-04 | 严敏 | Method of manufacturing LED laminated circuit board based on inorganic substances |
| CN105322910A (en) * | 2014-07-16 | 2016-02-10 | 精工爱普生株式会社 | Package base, package, electronic device, electronic apparatus, and moving object |
| CN105322910B (en) * | 2014-07-16 | 2020-04-24 | 精工爱普生株式会社 | Package base, package, electronic device, electronic apparatus, and moving object |
| CN105374925A (en) * | 2014-08-22 | 2016-03-02 | 严敏 | Inorganic substance-based LED epitaxy lamination circuit board and preparation method thereof |
| CN105374925B (en) * | 2014-08-22 | 2018-07-13 | 无锡极目科技有限公司 | A kind of LED epitaxial growth laminated circuit board and preparation method thereof based on inorganic matter |
| CN104465540A (en) * | 2014-12-22 | 2015-03-25 | 永新电子常熟有限公司 | Electronic chip with good stability |
| CN104896452A (en) * | 2015-06-11 | 2015-09-09 | 固态照明张家口有限公司 | Heat dissipation material, LED spot light radiator based on same, and LED spot light |
| CN109643880A (en) * | 2016-08-30 | 2019-04-16 | 特拉迪欧德公司 | It is encapsulated using the high power laser light of carbon nanotube |
| CN110513606A (en) * | 2018-10-29 | 2019-11-29 | 永康市道可道科技有限公司 | Outdoor LED lamp mosquito repellent system |
| CN110513606B (en) * | 2018-10-29 | 2021-02-26 | 临海市小核桃工业设计服务部 | Outdoor LED lamp mosquito repellent system |
| CN109371303A (en) * | 2018-11-07 | 2019-02-22 | 中国科学院宁波材料技术与工程研究所 | Heat-conductive composite material and preparation method thereof, radiating piece |
| CN111584346A (en) * | 2020-05-28 | 2020-08-25 | 浙江大学 | GaN device with heat sink structure and preparation method thereof |
| CN112038457A (en) * | 2020-09-11 | 2020-12-04 | 扬州乾照光电有限公司 | Flip red light LED chip and manufacturing method thereof |
| CN112038457B (en) * | 2020-09-11 | 2021-10-29 | 扬州乾照光电有限公司 | Flip red light LED chip and manufacturing method thereof |
| CN116093046A (en) * | 2023-04-10 | 2023-05-09 | 北京华封集芯电子有限公司 | Preparation method of single chip and chip structure |
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