CN102856272A - Insulating and radiating electronic subassembly - Google Patents
Insulating and radiating electronic subassembly Download PDFInfo
- Publication number
- CN102856272A CN102856272A CN2011101757227A CN201110175722A CN102856272A CN 102856272 A CN102856272 A CN 102856272A CN 2011101757227 A CN2011101757227 A CN 2011101757227A CN 201110175722 A CN201110175722 A CN 201110175722A CN 102856272 A CN102856272 A CN 102856272A
- Authority
- CN
- China
- Prior art keywords
- insulating
- heat
- building brick
- dielectric film
- electronic building
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to an insulating and radiating electronic subassembly which comprises a heating electronic device (1), a radiating substrate (3), and an insulating heat conduction material (3) distributed between the heating electronic device (1) and the radiating substrate (3), wherein the insulating heat conduction material (2) comprises an insulating film (5), and metal welding layers (4) and (6) firmly attached on the front surface and the back surface of the insulating film; the intermediate insulating film (5) has the thickness less than 100 microns; and the two metal welding layers (4) and (6) can be respectively connected with the heating electronic device (1) and the radiating substrate (3) in a manner of welding. With the adoption of the insulating and radiating electronic subassembly, the insulating heat conduction material (2) can be welded, the fixing and connecting performance between the insulating heat conduction material (2) and the heating electronic device (1) can be improved; the high heat conduction effect can be achieved while achieving the high-temperature insulating performance; and the insulating and radiating electronic subassembly is low in cost, simple to process, good in fixing effect, and suitable for being applied in large scale.
Description
Technical field
The present invention relates to a kind of insulating radiation electronic building brick.
Background technology
Along with the development of science and technology, the electronic device that more and more generates heat enters life or industry, and too much heat generation and can't leaving becomes and hinders the heating electronic device and keep the major obstacle of working normally and efficiently.
Light-emitting diode LED is a kind of by utilizing after the charge carrier that semi-conductive p-n junction structure injects, the more compound and luminous new device by minority carrier (electronics and hole).Light-emitting diode LED has low power consumption and long-life, and the antivibration characteristic; Display element and backlight have been used as.Yet, light occurrence features according to LED, the energy of input LED only has 20% to be converted to light, the residue 80% of input energy then is converted to the heat in the knot (junction portion), thereby increased inner temperature, the increase of internal temperature descends the performance of LED to a large extent; When long-time use LED, the caloric value of LED can increase, thereby can shorten the life-span of LED.
Integrated circuit, semiconductor device etc. can produce a large amount of heats after long work, and need in the course of the work and adjacent device isolation, and good insulation heat-conducting property can guarantee stable and security performance well.
In the solar-photovoltaic technology, photovoltaic cell after temperature is greater than 25 ℃, 1 ℃ of every rising, decrease in efficiency 0.2%～0.5%; In existing condensation photovoltaic battery component technology, because irradiation intensity is high, necessarily require good heat dissipation design; And the series winding of the group between the cell piece connects and safety standard requirements need good substrate electric insulation.Comparatively common encapsulation technology is EVA glue and TPT encapsulation technology in the photovoltaic industry, and main effect and function are aqueous vapor barrier, electric insulating quality, dimensional stability, workability and resistance to tearing etc., and holistic cost is high, and radiating effect is not good; The Chinese patent of the photovoltaic concentrator module of application number 200720120801.7 proposes, a kind of photovoltaic concentrator module, near close attachment one deck electric insulation layer on the surface of photovoltaic cell monomer one side, all scribbling heat-conducting silicone grease at radiator between photovoltaic cell monomer and the electric insulation layer and between conductive connecting piece and the electric insulation layer; Connect by elastic pressuring clamping device between the toughened glass of photovoltaic surface and the radiator.This structural insulation layer is thicker, heat-conducting layer viscosity insufficient strength, and the uniformity of coat is also very large to the influential effect of insulating barrier, and As time goes on its insulating properties also can not get good assurance.
Summary of the invention
The insulation, the heat conduction that the object of the invention is to better solve heating electronic device itself reach fixedly packing problem.
For addressing the above problem, the invention provides a kind of insulating radiation electronic building brick, comprise the insulating heat-conduction material of generate heat electronic device, heat-radiating substrate and the two intermediate arrangement; Described insulating heat-conduction material comprises that dielectric film and firm attachment are at the double-edged metal solderable layer of dielectric film; The double-level-metal solderable layer is welded to connect respectively in heating electronic device and heat-radiating substrate.
Further, described insulator film thickness to reduce thermal resistance, strengthens heat-sinking capability less than 100 microns.
Preferably, described insulator film thickness with further minimizing thermal resistance, is applicable to the more heat radiation occasion of high power density less than 30 microns, reduces thermal resistance.
Further, described metal solderable layer adopts vacuum coating technology to be attached directly to the dielectric film surface, with the cancellation adhesive linkage, reduces gross thickness, reduces thermal resistance, and obtains more excellent combination power.
Further, described metal solderable layer adopts first vacuum coating to plate a thin metal layer, for example the 0.2-5 micron; Adopt again the electricity of wet process depositing process to plate the metal level of identical or different kind, for example first vacuum chromium-coated, again water copper facing.
Further, the rete constituent of described metal solderable layer is the combination of Cr, Cu and Sn, and wherein the Cr layer is as the transition binder course, directly be combined with dielectric film, composite deposition Cu layer gradually on the Cr layer deposits the Sn layer again on the Cu layer, as weld interface, strengthen solderability.
Further, the membranous layer ingredient of described metal solderable layer can be in Cr, Cu, the Sn material one or both.
Further, described dielectric film is macromolecule membrane, films such as PET, PC, PMMA, PP, PI and polytetrafluoroethylene.
Preferably, described dielectric film has good heat resistance, in order to adapt to follow-up welding sequence, such as films such as PP, PI and polytetrafluoroethylene.
Further, described dielectric film can be splitting, has the good capacity of heat transmission and insulation characterisitic, and high temperature resistant.
Further, described heating electronic device is photovoltaic cell, light-emitting diode or the devices such as triode, integrated circuit device.
Further, described photovoltaic cell is the multiple light Electroconversion cells such as GaAs battery, monocrystalline silicon concentrator cell, CIGS light-gathering film battery.
Further, described photovoltaic cell, light-emitting diode etc. connect for the array group string mode.
Further, the back electrode of described photovoltaic cell is directly welded with the upper metal level that is attached to above the dielectric film, the increased thermal conductivity energy, and bed knife is provided.
Further, described heat-radiating substrate can be fixed on the other heat abstractor, with further raising heat-sinking capability.
The present invention compares with traditional insulating radiation electronic building brick, and have the following advantages: 1, the dielectric film steady quality is reliable, and insulation property are good, and along with time-shift may without electric leakage; 2, heat conductivility is excellent, because fixed form is welding, can not produce mechanical pressure and damage to dielectric film and heating electronic device, allow to use very thin dielectric film, also be fit to sheet device such as photovoltaic cell, and the double-sided metal solderable layer is connected with the heat-radiating substrate direct metal with the heating electronic device respectively, and heat-conducting effect is better; 3, adopt solder technology to finish the fixing of assembly, certain circuit group series winding connection function can be provided simultaneously, convenient and reliable.
Description of drawings
Below with reference to accompanying drawings specific embodiments of the present invention is described in detail, in the accompanying drawings:
Fig. 1 is insulating radiation electronic component structure schematic diagram of the present invention;
Fig. 2 is insulating heat-conduction material structural representation of the present invention;
Fig. 3 is the insulating radiation electronic component structure schematic diagram that array group string mode of the present invention connects the heating electronic device;
Fig. 4 is the mode that is connected in parallel of the heating electronic device of array group string mode of the present invention;
Fig. 5 is the mode that is connected in series of the heating electronic device of array group string mode of the present invention.
Embodiment
Fig. 1 is insulating radiation electronic component structure schematic diagram of the present invention; As shown in Figure 1, this insulating radiation electronic building brick comprises the insulating heat-conduction material 2 of generate heat electronic device 1, heat-radiating substrate 3 and the two intermediate arrangement; This insulating heat-conduction material 2 comprises that dielectric film and firm attachment are at the double-edged metal solderable layer of dielectric film; The intermediate insulation thickness is less than 100 microns, and for example thickness is 80 microns; The double-level-metal solderable layer is respectively by being welded to connect in heating electronic device 1 and heat-radiating substrate 3.This heating electronic device 1 is photovoltaic cell, light-emitting diode or the devices such as triode, integrated circuit device; When the heating electronic device 1 be photovoltaic cell, this photovoltaic cell can be the multiple light Electroconversion cells such as GaAs battery, monocrystalline silicon concentrator cell, CIGS light-gathering film battery; And photovoltaic cell 1 can also be the photovoltaic battery array string, and in order to receive the sunlight of assembling, a sunlight part is transformed into electric energy, and another part is converted to heat energy; When heating electronic device 1 is integrated circuit or light-emitting diode or light emitting transistor, begin acting after the energising, some of electric energy conversions become heat, conduct to it contacted metal solderable layer by insulating heat-conduction material 2, pass insulating film layer, pass through again another metal solderable layer, heat is conducted to heat-radiating substrate 3; Fix by full contact of welding realization between heating electronic device 1 and insulating heat-conduction material 2 and insulating heat-conduction material 2 and the heat-radiating substrate 3, be conducive to the quick transmission of heat.Further, heat-radiating substrate 3 can be fixed on another radiator again, with the overall heat-sinking capability of further reinforcement.
Fig. 2 is insulating heat-conduction material structural representation of the present invention; Insulating heat-conduction material 2 comprises intermediate insulating film 5 as shown in Figure 2, and thickness is less than 30 microns, and for example thickness is 12.5 microns, is guaranteeing can to reduce thermal resistance under the prerequisite of insulation property as far as possible, is useful in the application of high heat radiation power density more; Firm attachment is at the double-edged metal solderable layer 4 of dielectric film and metal solderable layer 6; Metal solderable layer 4 is connected in the heating electronic device; And metal solderable layer 6 is connected in heat-radiating substrate.The metal solderable layer adopts vacuum coating technology to be attached directly to dielectric film 5 surfaces or adopts vacuum coating technology elder generation's Direct precipitation layer of metal thin layer (such as the 0.2-5 micron) to carry out conductive treatment, adopt again the conventional wet electroplating technology to plate identical or different kind of metal level, also can directly all obtain the metal solderable layer by vacuum coating technology, to cancel the adhesive linkage that adopts in the common manufacture method, with the gross thickness that reduces insulated part (generally, common similar material structure is followed successively by 18 microns of Copper Foils, 20 microns of adhesive layers, 25 microns of PI films, 18 microns of 20 microns of adhesive layers and Copper Foils), reduce thermal resistance, and obtain more excellent combination power.Metal solderable layer rete constituent is the combination of Cr, Cu and Sn, and wherein the Cr layer directly is combined with dielectric film as the transition binder course, and composite deposition Cu layer gradually on the Cr layer deposits the Sn layer again on the Cu layer, as weld interface, strengthens solderability.The metallic diaphragm composition can be in Cr, Cu, the Sn material one or both.Dielectric film is macromolecule membrane, films such as PET, PC, PMMA, PP, PI and polytetrafluoroethylene; Dielectric film 5 has good heat resistance, in order to adapt to follow-up welding sequence, such as films such as PP, PI and polytetrafluoroethylene.Preferably, dielectric film 5 can be splitting, has the good capacity of heat transmission and insulation characterisitic, and high temperature resistant.Dielectric film is take thin PI film as example, and thickness is 12.5um, the about 0.6-1W/mk of thermal conductivity, but because enough thin, its thermal resistance is very little, is good heat carrier; The metal solderable layer is whole fine and close, and contacted heating electronic device and heat-radiating substrate are welded to connect with it, bulk strength is high, and insulation effect, long service life, replaced traditional use EVA and TPT encapsulation technology, avoided by a series of unstable and situations such as pressure damage Thin film cell or insulation film of insulation heat-conducting property that cause such as mechanical external force elasticity pressings.
Fig. 3 is the insulating radiation electronic component structure schematic diagram that array group string mode of the present invention connects the heating electronic device; As shown in Figure 3, the heating electronic device of a plurality of arrays is 1-1 and 1-3 for example, be welded on the heat-radiating substrate 3 by insulating heat-conduction material 2, a plurality of heating electronic devices for example comprise that a utmost point (for example anodal) at the back of the photovoltaic battery array that heating electronic device 1-1 or heating electronic device 1-3 form can be connected to the metal welding junction of insulating heat-conduction material; The increased thermal conductivity energy, and bed knife is provided.
Fig. 4 is the mode that is connected in parallel of the heating electronic device of array group string mode of the present invention, as shown in Figure 4, insulating heat-conduction material 2, comprise continuous metal solderable layer 4, dielectric film 5 and metal solderable layer 6, heat-radiating substrate 3 is welded to each other with metal solderable layer 6 and is connected, and the heating electronic device for example back of 1-1 or 1-3 all is directly welded on the metal solderable layer 4; By electrical connector 7, for example wire connects the mutual electricity of adjacent heating electronic device, can finish being connected in parallel of the electronic device that respectively generates heat at the heating electronic device.
Fig. 5 is the mode that is connected in series of the heating electronic device of array group string mode of the present invention, as shown in Figure 5, insulating heat-conduction material 2, comprise interrupted metal solderable layer 4, continuous dielectric film 5 and metal solderable layer 6, heat-radiating substrate 3 is welded to each other with metal solderable layer 6 and is connected, the heating electronic device for example back of 1-1 or 1-2 all is directly welded in each self-corresponding metal solderable layer, 4-1 for example, or on the 4-2; The heating electronic device is by electrical connector 7, wire for example, be connected on the metal solderable layer that adjacent generating hot-electron device is corresponding with it, for example the electrical connector 7 electronic device 1-1 that will generate heat links to each other with metal solderable layer 4-2, with adjacent heating electronic device for example 1-1 be connected with the mutual electricity of 1-2, can finish being connected in parallel of the electronic device that respectively generates heat.
Patent cost of the present invention is cheap, and processing is simple, and fixed effect is good, suitable extensive the use.
Obviously, under the prerequisite that does not depart from true spirit of the present invention and scope, the present invention described here can have many variations.Therefore, the change that all it will be apparent to those skilled in the art that all should be included within the scope that these claims contain.The present invention's scope required for protection is only limited by described claims.
Claims (12)
1. insulating radiation electronic building brick comprises the insulating heat-conduction material (2) of generate heat electronic device (1), heat-radiating substrate (3) and the two intermediate arrangement; Described insulating heat-conduction material (2) comprises that dielectric film (5) and firm attachment are in the double-edged metal solderable layer of dielectric film (5) (4) and (6); Double-level-metal solderable layer (4) and (6) are respectively by being welded to connect in heating electronic device (1) and heat-radiating substrate (3).
2. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that, the thickness of dielectric film (5) is no more than 100 microns.
3. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that, the thickness of dielectric film (5) is no more than 30 microns.
4. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that, but all or part of employing technique for vacuum coating in described metal layer (4) and (6) is attached to dielectric film (5) surface.
5. a kind of insulating radiation electronic building brick according to claim 4 is characterized in that, but the film layer group of described metal layer (4) and (6) becomes among Cr, Cu or the Sn at least a kind.
6. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that, described dielectric film (5) is the insulating polymer film.
7. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that, described dielectric film (5) is the macromolecule membranes such as PET, PC, PMMA, PP, PI and polytetrafluoroethylene.
8. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that, described dielectric film (5) is splitting.
9. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that, described heating electronic device (1) is photovoltaic cell, light-emitting diode or the devices such as triode, integrated circuit device.
10. a kind of insulating radiation electronic building brick according to claim 9 is characterized in that, described photovoltaic cell is the multiple light Electroconversion cells such as GaAs battery, monocrystalline silicon concentrator cell, CIGS light-gathering film battery.
11. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that, described heating electronic device (1) is by dielectric film (5) but top metal layer (4) carries out the heating electronics combination of devices that the array group series winding connects.
12. a kind of insulating radiation electronic building brick according to claim 1 is characterized in that described heat-radiating substrate (3) is fastened on the heat abstractor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101757227A CN102856272A (en) | 2011-06-27 | 2011-06-27 | Insulating and radiating electronic subassembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101757227A CN102856272A (en) | 2011-06-27 | 2011-06-27 | Insulating and radiating electronic subassembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102856272A true CN102856272A (en) | 2013-01-02 |
Family
ID=47402726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101757227A Pending CN102856272A (en) | 2011-06-27 | 2011-06-27 | Insulating and radiating electronic subassembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102856272A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595346A (en) * | 2013-11-05 | 2014-02-19 | 常州银河世纪微电子有限公司 | Protecting device of solar photovoltaic cell module |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10223810A (en) * | 1997-02-06 | 1998-08-21 | Toyota Motor Corp | Board for heat dissipation use and manufacture thereof |
| CN1815720A (en) * | 2005-01-19 | 2006-08-09 | 富士电机电子设备技术株式会社 | Semiconductor device and method for producing the same |
| CN101061580A (en) * | 2005-09-15 | 2007-10-24 | 三菱麻铁里亚尔株式会社 | Insulating circuit board and insulating circuit board provided with cooling sink section |
| CN101315913A (en) * | 2008-06-12 | 2008-12-03 | 上海芯光科技有限公司 | Light packaging member of power machine with high heat transfer efficiency |
| JP2010232545A (en) * | 2009-03-27 | 2010-10-14 | Honda Motor Co Ltd | Semiconductor device |
| CN101908521A (en) * | 2009-06-04 | 2010-12-08 | 本田技研工业株式会社 | Semiconductor device with and preparation method thereof |
| CN101981692A (en) * | 2008-03-25 | 2011-02-23 | 昭和电工株式会社 | Insulating substrate and method for producing the same |
| CN202259251U (en) * | 2011-06-27 | 2012-05-30 | 北京兆阳能源技术有限公司 | Insulating heat radiation electronic assembly |
-
2011
- 2011-06-27 CN CN2011101757227A patent/CN102856272A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10223810A (en) * | 1997-02-06 | 1998-08-21 | Toyota Motor Corp | Board for heat dissipation use and manufacture thereof |
| CN1815720A (en) * | 2005-01-19 | 2006-08-09 | 富士电机电子设备技术株式会社 | Semiconductor device and method for producing the same |
| CN101061580A (en) * | 2005-09-15 | 2007-10-24 | 三菱麻铁里亚尔株式会社 | Insulating circuit board and insulating circuit board provided with cooling sink section |
| CN101981692A (en) * | 2008-03-25 | 2011-02-23 | 昭和电工株式会社 | Insulating substrate and method for producing the same |
| CN101315913A (en) * | 2008-06-12 | 2008-12-03 | 上海芯光科技有限公司 | Light packaging member of power machine with high heat transfer efficiency |
| JP2010232545A (en) * | 2009-03-27 | 2010-10-14 | Honda Motor Co Ltd | Semiconductor device |
| CN101908521A (en) * | 2009-06-04 | 2010-12-08 | 本田技研工业株式会社 | Semiconductor device with and preparation method thereof |
| CN202259251U (en) * | 2011-06-27 | 2012-05-30 | 北京兆阳能源技术有限公司 | Insulating heat radiation electronic assembly |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103595346A (en) * | 2013-11-05 | 2014-02-19 | 常州银河世纪微电子有限公司 | Protecting device of solar photovoltaic cell module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101215694B1 (en) | Solar Cell Module And Manufacturing Method Thereof | |
| US20090025778A1 (en) | Shading protection for solar cells and solar cell modules | |
| KR20120038347A (en) | Radiant heat structure of solar cell for photovoltaic power generation | |
| US8933324B2 (en) | Thermally mounting electronics to a photovoltaic panel | |
| CN101924157A (en) | The photovoltaic concentrator system receiver that is used for III-V family semiconductor solar cell | |
| TW200945606A (en) | Solar cell module | |
| CN103563092B (en) | For the solar battery array of concentrator photovoltaic module | |
| CN101866972A (en) | Integral component of solar cell and radiator | |
| CN102683432A (en) | Photovoltaic module | |
| KR101891236B1 (en) | Photovoltaic thermal system and method | |
| US20160013343A1 (en) | Integrated photovoltaic and thermal module (pvt) | |
| CN116247120A (en) | Manufacturing method of photovoltaic cell assembly and photovoltaic cell assembly | |
| CN111739969B (en) | Photovoltaic module and series connection method thereof | |
| JP2012109414A (en) | Solar cell module | |
| CN202259251U (en) | Insulating heat radiation electronic assembly | |
| US20220085757A1 (en) | Hybrid solar panel for producing electrical energy and thermal energy | |
| KR20150032889A (en) | Solar cell module and manufacturing method for same | |
| CN102856272A (en) | Insulating and radiating electronic subassembly | |
| CN203839391U (en) | Solar photovoltaic and photo-thermal composite assembly | |
| CN102184996A (en) | Method for improving temperature stability of photovoltaic module and solar photovoltaic module | |
| EP2869462A1 (en) | Junction box and photovoltaic module including the same | |
| KR20150123443A (en) | Solar cell module with internal heat-transfer element | |
| JP2011054660A (en) | Solar-cell string and solar-cell module using the same | |
| CN209981247U (en) | Curved surface shingled photovoltaic module | |
| CN203721747U (en) | Flexible crystalline silicon solar energy assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130102 |