CN106910691B - The radiator structure and packaging technology of IGBT module in power converter - Google Patents
The radiator structure and packaging technology of IGBT module in power converter Download PDFInfo
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- CN106910691B CN106910691B CN201710132139.5A CN201710132139A CN106910691B CN 106910691 B CN106910691 B CN 106910691B CN 201710132139 A CN201710132139 A CN 201710132139A CN 106910691 B CN106910691 B CN 106910691B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The present invention relates to the radiator structure and packaging technology of IGBT module in a kind of power converter, structure includes substrate, chip, heat sink, graphene heat dissipating layer, graphene-based interconnection material, busbar and silica gel；Using heat dissipating layer of the single-layer graphene film as chip surface of chemical vapour deposition technique preparation, by playing its excellent face heat conduction performance, by the rapid lateral transport of hot localised points heat of IGBT module in power converter to heat sink；Few layer of graphene powder prepared by oxidation-reduction method or solvent stripping method is filled into multi-modal Argent grain conducting resinl, enhance its electrical and thermal conductivity performance, and as chip and substrate, the heat sink interconnection material between substrate, longitudinal conducting power of the heat from chip to substrate is improved；Heat conduction path is shortened using the interconnection mode of chip attachment, enhances integrally-built heat dissipation performance, realizes effective heat dissipation of local high heat flux density hot spot, to reduce the maximum temperature of IGBT module in power converter, promotes device service life.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular in a kind of power converter the radiator structure of IGBT module and
Packaging technology.
Background technique
With the development of the new-generations technology such as wind-power electricity generation, solar energy power generating, distributed generation system increasingly at
For the effective way for meeting load growth demand, reducing environmental pollution, improving comprehensive utilization rate of energy source and power supply reliability.Hair
Energy conversion is carried out between motor and power grid and the power converter capacity requirement of storage is increasing, and this requires power devices
IGBT module will have higher power grade, and the failure spoilage of large capacity IGBT module can not be ignored.
Middle high-pressure power converter is because failure accounts for 90% or more caused by IGBT module failure, when IGBT module weight
When being switched on or off again, failure or fatigue effect, working life and reliability are generated under the repeated action of thermal shock by shadow
Ring the normal operation to whole device or system.Semiconductor silicon chips are responsible for completing the change of current in IGBT module and encapsulating structure then mentions
For miscellaneous functions such as electrical connection, heat dissipation, insulation and mechanical strengths.IGBT failure mainly binding lead, binding point and
Caused by the unbearable thermal stress of solder layer and deformation, therefore the heat dissipation technology of improvement IGBT module and encapsulating structure are to solve it
One of countermeasure of failure.
In recent years using graphene as the two-dimensional material of representative, due to its unique physical property, such as the electron transfer of superelevation
Rate, high heat conductance, high Young's modulus and high-specific surface area etc. show broad application prospect in electronics and photon field.
Wherein, high heat conductance becomes its outstanding advantages in electronic heat-pipe ought to be used, and is hopeful directly as encapsulating material pair
IGBT module radiates, and the ability that module bears thermal cycle can be improved, to improve the long-term reliability of device application.
Summary of the invention
In order to solve prior art problem, it is an object of the present invention to overcome the deficiencies of the prior art, and to provide one kind
The radiator structure and packaging technology of IGBT module in power converter, by grapheme material with the form of film that radiates applied to hot-fluid
The higher igbt chip surface of density is applied to chip and substrate, heat sink and substrate in the form of filling enhances electrically and thermally conductive adhesive
Between, and by the interconnection mode of chip attachment, solve the heat dissipation problem of IGBT module in power converter.
In order to achieve the above objectives, the present invention adopts the following technical solutions.The heat dissipation of IGBT module in the power converter
Structure includes: the first igbt chip, and upper surface is the first igbt chip collector bonding pad, and lower surface is equipped with the first IGBT
Chip emission pole bonding pad and the first igbt chip gate connection region；First graphene film heat dissipating layer and the first IGBT core
The contact of piece emitter bonding pad.
The radiator structure of IGBT module may also include that the second igbt chip, upper surface packet in the power converter
The second igbt chip emitter bonding pad and the second igbt chip gate connection region are included, lower surface is the second igbt chip current collection
Pole bonding pad；Second graphene film heat dissipating layer is contacted with the second igbt chip collector bonding pad.
The radiator structure of IGBT module may also include that in the power converter
Substrate, upper surface include the gate terminal of the first igbt chip, the first igbt chip emitter and second
The common exit of igbt chip collector；
Transversely attached metal or graphite with the first graphene film heat dissipating layer and the second graphene film heat dissipating layer
Heat sink, heat sink to be fixed among the first igbt chip and the second igbt chip, the heat sink longitudinal thickness is both less than first
The thickness of igbt chip emitter bonding pad, and less than the thickness of the second igbt chip collector bonding pad；
With the first graphene film heat dissipating layer, the second graphene film heat dissipating layer, heat sink, the first igbt chip grid
The electrically and thermally conductive adhesive for having graphene filling enhancing of the lower surface of bonding pad and upper surface of base plate contact；
Bracket is connected with above the substrate, busbar is supported by the bracket is fixed, and the busbar is equipped with: with described the
The first connected busbar terminal of the collector terminal of one igbt chip；It is connected with the gate terminal of first igbt chip
The second busbar terminal；It is connected with the common exit of the first igbt chip emitter and the second igbt chip collector
Third busbar terminal；The 4th busbar terminal being connected with the emitter exit of second igbt chip；With described second
The 5th connected busbar terminal of the gate terminal of igbt chip；
Silica gel is filled between the busbar and the bracket structure constituted and substrate.
The packaging technology of IGBT module radiator structure in a kind of power converter, comprising the following steps:
(1) single-layer graphene is grown in copper foil surface, graphene/copper foil structure layer is formed, in graphene/copper foil structure layer
One layer of polymetylmethacrylate of upper spin coating obtains PMMA/ graphene/copper foil structure coating systems as film support layer；
(2) it uses sodium hydroxide solution as electrolyte, DC power cathode is connected to PMMA/ graphene/copper foil knot
On the copper foil of structure coating systems, while DC power anode being connected on platinum electrode, electric current is gradually increased, to copper foil and PMMA
It is separated with graphene, obtains PMMA/ graphene-structured layer；
(3) PMMA/ graphene-structured layer is transferred to the first igbt chip emitter and the second igbt chip current collection respectively
It on extremely, binds directly single-layer graphene with chip, removes PMMA with acetone after natural air drying, is i.e. chip surface obtains single layer stone
Black alkene film；
(4) substrate is provided, there is electricity in upper surface according to the production of the mounting method of the first igbt chip and the second igbt chip
Pole lead line, including the gate terminal of the first igbt chip, the first igbt chip emitter and the second igbt chip
The common exit of collector, the collector terminal of the first igbt chip, the emitter exit of the second igbt chip, second
The gate terminal of igbt chip；The method of substrate surface silk-screen printing graphite alkene enhancing electrically and thermally conductive adhesive,
Substrate surface is adhesive in by graphene enhancing conductive and heat-conductive by heat sink；
(5) by the first igbt chip and the second igbt chip by way of attachment, i.e. the emitter of the first igbt chip
Downward with the collector of the second igbt chip, make single-layer graphene film enhance electrically and thermally conductive adhesive by graphene to be formed with substrate
Good contact；Meanwhile first igbt chip and the second igbt chip be individually positioned in heat sink both sides, and keep single-layer graphene thin
The collector of film, the emitter of the first igbt chip and the second igbt chip is all physically contacted with heat sink formation, so that chip office
The heat of portion's hot spot is passed to heat sink by single-layer graphene, and then passes to substrate；
(6) ladder-elevating temperature makes graphene enhance electrically and thermally conductive adhesive completion of cure, by the emitter of the first igbt chip and the
One igbt chip grid, the second igbt chip collector and substrate and heat sink formed between substrate interconnect；Use wire bonding
Method by metal wire respectively by the first igbt chip collector, the second igbt chip grid, the second igbt chip emitter
Exit corresponding on substrate is connected；Busbar and bracket are installed above substrate, in busbar and the structure and base of bracket composition
Filling gel between plate, room temperature curing.
Specifically, the method for above-mentioned steps (6) wire bonding passes through the first metal wire for the first igbt chip collector
It is connected with the collector terminal of the first igbt chip on substrate, by the second metal wire by the second igbt chip grid and base
The gate terminal of the second igbt chip on plate is connected, will be on the second igbt chip emitter and substrate by third metal wire
The second igbt chip emitter exit be connected.
Specifically, having multiple busbar terminals on step (6) described busbar, wherein the collector terminal of the first igbt chip
It is connected with the first busbar terminal, the gate terminal of the first igbt chip is connected with the second busbar terminal, the first igbt chip hair
The common exit of emitter-base bandgap grading and the second igbt chip collector is connected with third busbar terminal, and the emitter of the second igbt chip draws
Outlet is connected with the 4th busbar terminal, and the gate terminal of the second igbt chip is connected with the 5th busbar terminal.
The present invention compared with prior art, has the advantages that
1, the present invention can play heat biography in its excellent face using single-layer graphene film as the heat dissipating layer of chip surface
Performance is led, heat is transmitted to rapidly heat sink, and then is distributed by substrate, it is high for the part of IGBT module in power converter
Hot-fluid hot spot is very effective thermal management scheme；
2, the present invention using few layer of graphene powder filling enhancing electrically and thermally conductive adhesive as chip and substrate, heat sink and substrate it
Between interconnection material, longitudinal conductive performance of the heat from chip to substrate can be improved, while the interconnection mode of chip attachment can
To enhance integrally-built reliability, meet radiating requirements in the high-power IGBT module of high heat flux density.
Detailed description of the invention
Fig. 1 is the structural schematic diagram that graphene film of the embodiment of the present invention is applied to the first igbt chip surface.
Fig. 2 is the structural schematic diagram that graphene film of the embodiment of the present invention is applied to the second igbt chip surface.
Fig. 3 is the radiator structure schematic diagram of IGBT module in power converter proposed by the present invention.
Fig. 4 is PMMA/ graphene/Cu structure coating systems schematic diagram in present invention process implementation steps 1.1.
Fig. 5 is the PMMA/ graphene-structured layer schematic diagram in present invention process implementation steps 1.2.
Fig. 6 is the substrate schematic diagram in present invention process implementation steps 2.1.
Fig. 7 is heat sink attachment schematic diagram in present invention process implementation steps 2.2.
Fig. 8 is chip attachment schematic diagram in present invention process implementation steps 2.2.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
The invention proposes a kind of radiator structures of IGBT module in power converter, including substrate, chip, heat sink, stone
Black alkene heat dissipating layer, graphene-based interconnection material and busbar and silica gel.
The first igbt chip is wherein used for as heat dissipating layer using the single-layer graphene film of chemical vapour deposition technique preparation
12 surface of emitter and the second igbt chip 22 surface of collector, referring to Fig. 1 and Fig. 2.In Fig. 1 on the first igbt chip 11
There are the emitter 12 and grid 13 of the first igbt chip in surface, and the upper surface of the first igbt chip emitter 12 is the first single layer stone
Black alkene film 10.There is the collector 22 of the second igbt chip in 21 upper surface of the second igbt chip in Fig. 2, and upper surface is second single
Layer graphene film 20.
The few layer of graphene powder that the present invention is prepared using oxidation-reduction method or solvent stripping method is filled into multi-modal silver
Enhance electrical and thermal conductivity performance in grain conducting resinl, be then used as chip and substrate, the heat sink interconnection between substrate, radiate whole knot
Structure is referring to Fig. 3.There is electricity in the upper surface of substrate 31 according to the production of the mounting method of the first igbt chip 11 and the second igbt chip 21
Pole lead line, including the gate terminal 32 of the first igbt chip 11, the first igbt chip emitter 12 and second
The common exit 33 of igbt chip collector 22, the collector terminal 35 of the first igbt chip 11, the second igbt chip 21
Emitter exit 41, the gate terminal 38 of the second igbt chip 21.Heat sink 42 be metal or graphite, heat sink 42 and substrate
Between 31, used between the first igbt chip 11 and the second igbt chip 21 and substrate 31 graphene enhance electrically and thermally conductive adhesive 43 as
Interconnection material.First igbt chip 11 is installed on the substrate 31 in a manner of attachment, i.e. the collector 14 of the first igbt chip 11
Above, here is the emitter 12 and grid 13 of the first igbt chip 11, wherein on the emitter 12 of the first igbt chip 11
Post the first single-layer graphene film 10.Second igbt chip 21 is also installed in a manner of attachment on the substrate 31, i.e., and second
The grid 36 and emitter 39 of igbt chip 21 are above, and collector 22 is below, wherein the collector of the second igbt chip 21
The second single-layer graphene film 20 is posted on 22.First igbt chip collector 14 and the first igbt chip current collection on substrate 31
Pole exit 35 is connected by the first metal wire 34, and the second igbt chip grid 36 draws with the second igbt chip grid on substrate 31
Outlet 38 is connected by the second metal wire 37, and the second igbt chip emitter 39 draws with the second igbt chip emitter on substrate 31
Outlet 41 is connected by third metal wire 40.Also production has busbar 44 and bracket 45 on the substrate 31, and busbar 44 is by being connected to substrate
The fixed support of the bracket 45 of top, busbar 44 are equipped with multiple busbar terminals, and the upper end of busbar terminal is set to busbar 44 and bracket
The upper surface of 45 structures, wherein the collector terminal 35 of the first igbt chip 11 is connected with the first busbar terminal 46, first
The gate terminal 32 of igbt chip 11 is connected with the second busbar terminal 47, the emitter 12 and the 2nd IGBT of the first igbt chip
The exit 33 of the collector 22 of chip 21 is connected with third busbar terminal 48, the emitter exit 41 of the second igbt chip 21
It is connected with the 4th busbar terminal 49, the gate terminal 38 of the second igbt chip 21 is connected with the 5th busbar terminal 50.Busbar 44
And filling gel 51 between the structure constituted of bracket 45 and substrate 31.
The invention proposes a kind of packaging technologies of IGBT module radiator structure in power converter, including using chemical gas
Shifting process of the single-layer graphene film as igbt chip heat dissipating layer of phase sedimentation preparation, and use oxidation-reduction method or
Few layer of graphene powder of solvent stripping method preparation, being filled into multi-modal Argent grain conducting resinl enhances electrical and thermal conductivity performance, uses
In chip and two substrate, the heat sink interconnection process between substrate parts.
Wherein, in IGBT module radiator structure heat dissipating layer shifting process specific steps are as follows:
Step 1.1, as shown in figure 4,60 surface of copper foil with chemical vapor deposition method grow single-layer graphene 61, formed
Graphene/copper foil structure layer, then one strata methyl methacrylate (PMMA) 62 of spin coating is made on graphene/copper foil structure layer
For film support layer, PMMA/ graphene/Cu structure coating systems are obtained.
Step 1.2, use molar concentration be 0.25~1M NaOH solution as electrolyte, DC power cathode is connected
Onto PMMA/ graphene/Cu structure coating systems copper foil 60, while DC power anode being connected on platinum electrode, by electric current
Be gradually increased (such as start from scratch and be gradually increased to about 1A), copper foil 60 can be separated with PMMA/ graphene after 20~30 seconds, be obtained
PMMA/ graphene-structured layer, as shown in Figure 5.
PMMA/ graphene-structured layer is transferred on the first igbt chip emitter 12 by step 1.3, makes single-layer graphene
It is bound directly with chip, removes PMMA with acetone after natural air drying, is i.e. chip surface obtains the first single-layer graphene film 10, such as
Shown in Fig. 1.Step 1.1 and step 1.2 are repeated, PMMA/ graphene-structured layer is transferred on the second igbt chip collector 22,
It binds directly single-layer graphene with chip, removes PMMA with acetone after natural air drying, is i.e. chip surface obtains the second single layer stone
Black alkene film 20, as shown in Figure 2.
The specific steps of interconnection process in IGBT module radiator structure of the present invention are as follows:
Step 2.1, according to the mounting method of the first igbt chip 11 proposed by the present invention and the second igbt chip 21, design
Production has the substrate 31 on electrode outlet line road, as shown in Figure 6.The upper surface of substrate 31 is according to the first igbt chip 11 and second
The mounting method production of igbt chip 21 has electrode outlet line road, including the gate terminal 32 of the first igbt chip 11,
The common exit 33 of first igbt chip emitter 12 and the second igbt chip collector 22, the current collection of the first igbt chip 11
Pole exit 35, the emitter exit 41 of the second igbt chip 21, the gate terminal 38 of the second igbt chip 21.
Step 2.2, substrate 31 surface silk-screen printing method graphite alkene enhancing electrically and thermally conductive adhesive 43, heat sink 42
Enhance electrically and thermally conductive adhesive 43 by graphene and be sticked to 31 surface of substrate, as shown in Figure 7.By the first igbt chip 11 and the 2nd IGBT
For chip 21 by way of attachment, i.e. the first igbt chip emitter 12 and the second igbt chip collector 22 downward, make first
Single-layer graphene film 10 and the second single-layer graphene film 20 enhance electrically and thermally conductive adhesive 43 by graphene and are formed with substrate 31
Good contact, as shown in Figure 8.Meanwhile first igbt chip 11 and the second igbt chip 21 be individually positioned in heat sink 42 both sides,
And make the first single-layer graphene film 10 and the second single-layer graphene film 20, the first igbt chip emitter 12 and the 2nd IGBT
Chip collector 22 is all formed with heat sink 42 and is physically contacted, in this way can be by the first igbt chip emitter 12 and the 2nd IGBT core
The heat of piece collector 22 passes through high heat conductance in the face of the first single-layer graphene film 10 and the second single-layer graphene film 20
Heat sink 42 are passed to rapidly, and then pass to substrate 31.
Step 2.3, ladder-elevating temperature, such as heated 30 minutes at 110 DEG C, 140 DEG C are then warming up to, keeps the temperature 1.5 hours,
Make 43 completion of cure of graphene conductive heat-conducting glue, by the first igbt chip emitter 12 and grid 13, the second igbt chip current collection
Reliable interconnection is formed between pole 22 and heat sink 42, with substrate 31.It will by the first metal wire 34 with the method for wire bonding
First igbt chip collector 14 is connected with the collector terminal 35 of the first igbt chip on substrate 31, passes through the second metal
Second igbt chip grid 36 is connected by line 37 with the gate terminal 38 of the second igbt chip on substrate 31, passes through third gold
Belong to line 40 second igbt chip emitter 39 is connected with the emitter exit 41 of the second igbt chip on substrate 31.Installation
Busbar 44 and bracket 45, wherein the collector terminal 35 of the first igbt chip 11 is connected with the first busbar terminal 46, first
The gate terminal 32 of igbt chip 11 is connected with the second busbar terminal 47, the emitter 12 and the 2nd IGBT of the first igbt chip
The exit 33 of the collector 22 of chip 21 is connected with third busbar terminal 48, the emitter exit 41 of the second igbt chip 21
It is connected with the 4th busbar terminal 49, the gate terminal 38 of the second igbt chip 21 is connected with the 5th busbar terminal 50, such as Fig. 3 institute
Show.Filling gel 45, room temperature curing between busbar 44 and bracket 45 and substrate 31.
Heat dissipating layer of the present invention using the single-layer graphene film of chemical vapour deposition technique preparation as chip surface, passes through
Its excellent face heat conduction performance is played, the rapid lateral transport of hot localised points heat of IGBT module in power converter is arrived
It is heat sink；Few layer of graphene powder prepared by oxidation-reduction method or solvent stripping method is filled into multi-modal Argent grain conducting resinl,
Enhance its electrical and thermal conductivity performance, and as chip and substrate, the heat sink interconnection material between substrate, improves heat from core
Longitudinal conducting power of the piece to substrate；Heat conduction path is shortened using the interconnection mode of chip attachment, enhances integrally-built dissipate
Hot property realizes effective heat dissipation of local high heat flux density hot spot, to reduce the highest temperature of IGBT module in power converter
Degree promotes device service life.
The foregoing is merely the preferred embodiments of the invention, are not intended to limit the invention creation, all at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the invention within the spirit and principle of innovation and creation
Protection scope within.
Claims (4)
1. the radiator structure of IGBT module in power converter characterized by comprising the first igbt chip (11), thereon table
Face is first igbt chip collector (14) bonding pad, and lower surface is equipped with the first igbt chip emitter (12) bonding pad and the
One igbt chip grid (13) bonding pad；First graphene film heat dissipating layer (10) and the first igbt chip emitter (12)
Bonding pad contact；
Further include: the second igbt chip (21), upper surface include the second igbt chip emitter (39) bonding pad and second
Igbt chip grid (36) bonding pad, lower surface are second igbt chip collector (22) bonding pad；Second graphene film
Heat dissipating layer (20) is contacted with the second igbt chip collector (22) bonding pad；
Further include: substrate (31), upper surface include the gate terminal (32) of the first igbt chip, the transmitting of the first igbt chip
The common exit (33) of pole (12) and the second igbt chip collector (22)；
With the first graphene film heat dissipating layer (10) and the second graphene film heat dissipating layer (20) transversely attached metal or
Graphite is heat sink (42), and heat sink (42) are fixed on the first igbt chip (11) and the second igbt chip (21) is intermediate, described heat sink
(42) longitudinal thickness is not only less than the thickness of first igbt chip emitter (12) bonding pad, but also less than the second igbt chip current collection
The thickness of pole (22) bonding pad；
With the first graphene film heat dissipating layer (10), the second graphene film heat dissipating layer (20), heat sink (42), the first IGBT
The conductive and heat-conductive for having graphene filling enhancing of the lower surface of chip gate (13) bonding pad and the contact of substrate (31) upper surface
Glue (43)；
It is connected with bracket (45) above the substrate (31), busbar (44) is supported by the bracket (45) are fixed, the busbar
(44) it is equipped with: the first busbar terminal (46) being connected with the collector terminal (35) of first igbt chip；With it is described
The second connected busbar terminal (47) of the gate terminal (32) of first igbt chip；With the first igbt chip emitter and
The connected third busbar terminal (48) of the common exit (33) of second igbt chip collector；With second igbt chip
The 4th connected busbar terminal (49) of emitter exit (41)；It is connected with the gate terminal (38) of second igbt chip
The 5th busbar terminal (50)；
Silica gel (51) are filled between the busbar (44) and bracket (45) structure constituted and substrate (31).
2. the packaging technology of IGBT module radiator structure in power converter, which comprises the following steps:
(1) single-layer graphene (61) are grown on copper foil (60) surface, graphene/copper foil structure layer is formed, in graphene/copper foil knot
One layer of polymetylmethacrylate (62) of spin coating is used as film support layer on structure layer, obtains PMMA/ graphene/copper foil structure
Coating systems；
(2) it uses sodium hydroxide solution as electrolyte, DC power cathode is connected to PMMA/ graphene/copper foil structure layer
On the copper foil (60) of system, while DC power anode being connected on platinum electrode, electric current is gradually increased, to copper foil (60) with
PMMA and graphene separation, obtain PMMA/ graphene-structured layer；
(3) PMMA/ graphene-structured layer is transferred to the first igbt chip emitter (12) and the second igbt chip current collection respectively
It on pole (22), binds directly single-layer graphene with chip, removes PMMA with acetone after natural air drying, is i.e. chip surface obtains list
Layer graphene film；
(4) provide substrate (31), upper surface according to the first igbt chip (11) and the second igbt chip (21) mounting method
Production has electrode outlet line road, including the gate terminal (32) of the first igbt chip (11), the transmitting of the first igbt chip
The common exit (33) of pole (12) and the second igbt chip collector (22), the collector terminal of the first igbt chip (11)
(35), the emitter exit (41) of the second igbt chip (21), the gate terminal (38) of the second igbt chip (21)；Institute
The method for stating substrate (31) surface silk-screen printing graphite alkene enhancing electrically and thermally conductive adhesive (43), heat sink (42) are passed through into graphite
Alkene enhancing electrically and thermally conductive adhesive (43) is sticked to substrate (31) surface；
(5) by the first igbt chip (11) and the second igbt chip (21) by way of attachment, i.e. the hair of the first igbt chip
The collector (22) of emitter-base bandgap grading (12) and the second igbt chip downward, makes single-layer graphene film enhance conductive and heat-conductive by graphene
Glue (43) is formed with substrate (31) and is well contacted；Meanwhile first igbt chip (11) and the second igbt chip (21) place respectively
On heat sink (42) both sides, and make single-layer graphene film, the first igbt chip emitter (12) and the second igbt chip collection
Electrode (22) is all formed with heat sink (42) and is physically contacted, so that the heat of chip hot localised points passes to heat by single-layer graphene
Heavy (42), and then pass to substrate (31)；
(6) ladder-elevating temperature makes graphene enhance electrically and thermally conductive adhesive (43) completion of cure, by the emitter (12) of the first igbt chip
With the first igbt chip grid (13), the second igbt chip collector (22) and substrate (31) and heat sink (42) and substrate
(31) interconnection is formed between；With the method for wire bonding by metal wire respectively by the first igbt chip collector (14), second
Igbt chip grid (36), the second igbt chip emitter (39) are connected with corresponding exit on substrate (31)；In substrate
(31) top installation busbar (44) and bracket (45) are filled out in busbar (44) and bracket (45) structure constituted and between substrate (31)
Fill silica gel (51), room temperature curing.
3. the packaging technology of IGBT module radiator structure in power converter as claimed in claim 2, which is characterized in that step
(6) with the method for wire bonding by the first metal wire (34) by the on the first igbt chip collector (14) and substrate (31)
The collector terminal (35) of one igbt chip is connected, by the second metal wire (37) by the second igbt chip grid (36) and base
The gate terminal (38) of the second igbt chip on plate (31) is connected, and is sent out the second igbt chip by third metal wire (40)
Emitter-base bandgap grading (39) is connected with the emitter exit (41) of the second igbt chip on substrate (31).
4. the packaging technology of IGBT module radiator structure in power converter as claimed in claim 2, which is characterized in that step
(6) there are multiple busbar terminals on the busbar (44), wherein the collector terminal (35) of the first igbt chip and the first busbar
Terminal (46) is connected, and the gate terminal (32) of the first igbt chip is connected with the second busbar terminal (47), the first igbt chip
The common exit (33) of emitter (12) and the second igbt chip collector (22) is connected with third busbar terminal (48), and second
The emitter exit (41) of igbt chip is connected with the 4th busbar terminal (49), the gate terminal (38) of the second igbt chip
It is connected with the 5th busbar terminal (50).
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| CN108257856B (en) * | 2017-12-21 | 2019-05-24 | 秦皇岛京河科学技术研究院有限公司 | The preparation method and its structure of the SiC MOSFET power device of high temperature resistant low-power consumption |
| CN108321134A (en) * | 2018-04-09 | 2018-07-24 | 黄山宝霓二维新材科技有限公司 | The encapsulating structure and processing technology of the plastic sealed IPM modules of high power density |
| CN109887909B (en) * | 2019-03-13 | 2020-06-23 | 黄山学院 | Graphene-based IPM hybrid module packaging structure and processing technology |
| CN109786345B (en) * | 2019-03-13 | 2024-04-23 | 黄山谷捷股份有限公司 | Advanced packaging structure and processing technology of graphene-based IPM module |
| CN111048474B (en) * | 2019-08-29 | 2021-07-16 | 宜兴市三鑫电子有限公司 | Preparation process for heat dissipation package of compact IGBT module |
| CN112366188B (en) * | 2020-08-24 | 2023-07-25 | 杰群电子科技（东莞）有限公司 | Semiconductor device packaging structure with radiating fins and packaging method |
| CN112164679B (en) * | 2020-08-24 | 2023-07-21 | 杰群电子科技（东莞）有限公司 | Semiconductor device packaging structure with good heat dissipation and packaging method |
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| CN201478305U (en) * | 2009-07-27 | 2010-05-19 | 沈富德 | Flat type packaged dual insulated-gate bipolar transistor device |
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| CN106449402A (en) * | 2016-11-22 | 2017-02-22 | 南通沃特光电科技有限公司 | Manufacturing method of power device having graphene heat-radiating structure |
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