CN201478305U - Flat type packaged dual insulated-gate bipolar transistor device - Google Patents
Flat type packaged dual insulated-gate bipolar transistor device Download PDFInfo
- Publication number
- CN201478305U CN201478305U CN 200920232964 CN200920232964U CN201478305U CN 201478305 U CN201478305 U CN 201478305U CN 200920232964 CN200920232964 CN 200920232964 CN 200920232964 U CN200920232964 U CN 200920232964U CN 201478305 U CN201478305 U CN 201478305U
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- Prior art keywords
- pin
- gate bipolar
- bipolar transistor
- functional pin
- electrode
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The utility model relates to the technical field of packaged components, particularly to a flat type packaged dual insulated-gate bipolar transistor device, which comprises a lead frame. Two dual insulated-gate bipolar transistor chips are arranged on the lead frame, the periphery of the lead frame is packaged with insulating resin to form a flat structure, and a first functional pin, a second functional pin, a third functional pin, a fourth functional pin and a fifth functional pin are led out from the lower end of the lead frame. The second functional pin and the fourth functional pin are used as the control gate electrodes of the two dual insulated-gate bipolar transistor chips respectively, the first functional pin is used as the common electrode from the emitting electrode of one dual insulated-gate bipolar transistor chip and the collecting electrode of the other dual insulated-gate bipolar transistor chip, the third functional pin is used as the emitting electrode corresponding to the collecting electrode of the common electrode, and the fifth electrode is used as the collecting electrode corresponding to the emitting electrode of the common electrode. The flat type packaged dual insulated-gate bipolar transistor device has the advantages of flat structure, low thermal resistance, stable and reliable performance during usage, high anti-jamming property, simple production process, and applicability to volume production, and is suitable for a circuit board.
Description
Technical field
The utility model relates to encapsulation components and parts technical field, the two insulated gate bipolar transistor devices of especially a kind of flat encapsulation.
Background technology
At present, common two IGBT insulated gate bipolar transistor devices all adopt the standard module encapsulation, the bottom has copper soleplate, adding plastic housing seals, volume is very big, the production technology more complicated just seems very inapplicable for two IGBT devices of middle low power, has caused the increase of cost simultaneously and has taken up room problem such as big.
The utility model content
The technical problems to be solved in the utility model is: for shortcoming and the deficiency that solves above-mentioned existence, provide a kind of flat thing encapsulation two insulated gate bipolar power tube components and parts.
The technical scheme that its technical problem that solves the utility model adopts is: the two insulated gate bipolar transistor devices of a kind of flat encapsulation, has lead frame, lead frame is provided with two insulated gate bipolar power tube chips, the peripheral plastic packaging insulating resin of lead frame forms flat structure, the lower end leads to the function pin, the function pin comprises pin No. one, No. two, pin, No. three, pin, No. five, No. four, pin and pin, No. four, No. two, pin and pin are respectively as the control gate pole of two insulated gate bipolar power tube chips, pin is for No. one the public electrode as the collector electrode of the emitter of insulated gate bipolar power tube chip and another insulated gate bipolar power tube chip, pin is for No. three the emitter corresponding with the public electrode collector electrode, pin is for No. five the collector electrode corresponding with the public electrode emitter, when extremely adding positive voltage signal at control gate, collector electrode and emitter be confucian orthodoxy immediately, when control gate extremely adds suitable negative voltage signal, collector electrode and emitter can fully in time turn-off again, the frequency height of switch.
Further, for convenience with the fastening installation of heat abstractor, be provided with installing hole, the better function of heat radiation in the middle of the flat structure.
In order to make integrally-built volume little, the length of flat structure is that 35 ± 3mm, width are 23 ± 3mm, highly are 3 ± 1mm.
The beneficial effects of the utility model are the two insulated gate bipolar transistor devices of flat encapsulation of the present utility model, flat structure, volume is little, thermal resistance is low, and suitable wiring board is installed and used, stable performance during use, reliably anti-interference, production technology is simple, is fit to produce in batches, is widely used, production cost is low, and the installing space that takies is little.
Description of drawings
Below in conjunction with drawings and Examples the utility model is further specified.
Fig. 1 is a structure diagram of the present utility model;
Fig. 2 is a partial sectional view of the present utility model;
Fig. 3 is a structural representation of the present utility model;
Fig. 4 is that circuit of the present utility model connects sketch.
1. lead frames among the figure, 2. power tube chip, 3. insulating resin, 4. function pin, 5. installing hole are double-clicked in the insulation mountain.
Embodiment
With preferred embodiment the utility model is described in further detail in conjunction with the accompanying drawings now.These accompanying drawings are the schematic diagram of simplification, basic structure of the present utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
As Fig. 1, Fig. 2, Fig. 3, the two insulated gate bipolar transistor devices of the flat encapsulation of preferred forms shown in Figure 4, has lead frame 1, lead frame 1 is provided with two insulated gate bipolar power tube chips 2, the peripheral plastic packaging insulating resin 3 of lead frame 1 forms flat structure, the lower end leads to function pin 4, function pin 4 comprises 4-1 of pin, No. two 4-2 of pin, No. three 4-3 of pin, No. four 4-4 of pin and No. five 4-5 of pin, No. two 4-2 of pin and No. four 4-4 of pin are respectively as the control gate pole of two insulated gate bipolar power tube chips 2,4-1 of pin is the public electrode as the collector electrode of the emitter of insulated gate bipolar power tube chip 2 and another insulated gate bipolar power tube chip 2, No. three 4-3 of pin are the emitter corresponding with the public electrode collector electrode, No. five 4-5 of pin are the collector electrode corresponding with the public electrode emitter, when extremely adding positive voltage signal at control gate, the conducting immediately of collector electrode and emitter, when control gate extremely adds suitable negative voltage signal, collector electrode and emitter can fully in time turn-off again, the frequency height of switch, be provided with installing hole 5 in the middle of the flat structure, the length of flat structure is 35 ± 3mm, width is 23 ± 3mm, be 3 ± 1mm highly, make that the overall structure volume is little.
Installing hole 5 by the centre when the utility model uses is anchored on heat abstractor with it, each function pin 4 connects the homologous lines terminal, and by extremely adding voltage signal at control gate, the conducting elm of control sets electrode and emitter is turn-offed, the frequency height of switch is fit to the high frequency occasion and uses.
With above-mentioned foundation desirable embodiment of the present utility model is enlightenment, and by above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this utility model technological thought.The technical scope of this utility model is not limited to the content on the specification, must determine its technical scope according to the claim scope.
Claims (3)
1. two insulated gate bipolar transistor devices of a flat encapsulation, has lead frame (1), it is characterized in that: lead frame (1) is provided with two insulated gate bipolar power tube chips (2), the peripheral plastic packaging insulating resin (3) of lead frame (1) forms flat structure, the lower end leads to function pin (4), function pin (4) comprises No. one, pin (4-1), No. two, pin (4-2), No. three, pin (4-3), pin No. four (4-4) and No. five, pins (4-5), pin No. two (4-2) and pin No. four (4-4) are respectively as the control gate pole of two insulated gate bipolar power tube chips (2), pin No. one (4-1) is the public electrode as the collector electrode of the emitter of insulated gate bipolar power tube chip (2) and another insulated gate bipolar power tube chip (2), pin No. three (4-3) is the emitter corresponding with the public electrode collector electrode, and pin No. five (4-5) is the collector electrode corresponding with the public electrode emitter.
2. the two insulation of flat encapsulation according to claim 1 bipolar power components and parts is characterized in that: be provided with installing hole (5) in the middle of the described flat structure.
3. the two insulation of flat encapsulation according to claim 1 bipolar power components and parts is characterized in that: the length of described flat structure is that 35 ± 3mm, width are 23 ± 3mm, highly are 3 ± 1mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920232964 CN201478305U (en) | 2009-07-27 | 2009-07-27 | Flat type packaged dual insulated-gate bipolar transistor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200920232964 CN201478305U (en) | 2009-07-27 | 2009-07-27 | Flat type packaged dual insulated-gate bipolar transistor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201478305U true CN201478305U (en) | 2010-05-19 |
Family
ID=42414565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200920232964 Expired - Fee Related CN201478305U (en) | 2009-07-27 | 2009-07-27 | Flat type packaged dual insulated-gate bipolar transistor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201478305U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106910691A (en) * | 2017-03-07 | 2017-06-30 | 黄山学院 | The radiator structure and packaging technology of IGBT module in power converter |
| CN113394204A (en) * | 2020-03-11 | 2021-09-14 | 珠海格力电器股份有限公司 | Power semiconductor device and method for manufacturing power semiconductor device |
-
2009
- 2009-07-27 CN CN 200920232964 patent/CN201478305U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106910691A (en) * | 2017-03-07 | 2017-06-30 | 黄山学院 | The radiator structure and packaging technology of IGBT module in power converter |
| CN106910691B (en) * | 2017-03-07 | 2019-03-22 | 黄山学院 | The radiator structure and packaging technology of IGBT module in power converter |
| CN113394204A (en) * | 2020-03-11 | 2021-09-14 | 珠海格力电器股份有限公司 | Power semiconductor device and method for manufacturing power semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: Sirectifier Electronics Technology Corporation Assignor: Shen Fude Contract record no.: 2010320000300 Denomination of utility model: Flat type packaged dual insulated-gate bipolar transistor device Granted publication date: 20100519 License type: Exclusive License Record date: 20100324 |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100519 Termination date: 20110727 |