CN104485397A - High-thermal conductivity and high-light extracting efficiency ceramic and mirror aluminum composite substrate for LED and preparation process of substrate - Google Patents
High-thermal conductivity and high-light extracting efficiency ceramic and mirror aluminum composite substrate for LED and preparation process of substrate Download PDFInfo
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- CN104485397A CN104485397A CN201410652163.8A CN201410652163A CN104485397A CN 104485397 A CN104485397 A CN 104485397A CN 201410652163 A CN201410652163 A CN 201410652163A CN 104485397 A CN104485397 A CN 104485397A
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- Prior art keywords
- ceramic substrate
- ceramic
- copper
- substrate
- aluminium foil
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- 239000000919 ceramic Substances 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 28
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 239000002131 composite material Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000010949 copper Substances 0.000 claims abstract description 50
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 37
- 229910052802 copper Inorganic materials 0.000 claims abstract description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 34
- 238000005245 sintering Methods 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000005219 brazing Methods 0.000 claims abstract description 11
- 238000007747 plating Methods 0.000 claims abstract description 11
- 238000001465 metallisation Methods 0.000 claims abstract description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000005751 Copper oxide Substances 0.000 claims abstract description 6
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 6
- 239000005030 aluminium foil Substances 0.000 claims description 39
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- 239000004411 aluminium Substances 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 238000005476 soldering Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 239000011888 foil Substances 0.000 abstract 4
- 238000000059 patterning Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a high-thermal conductivity and high-light extracting efficiency ceramic and mirror aluminum composite substrate for an LED and a preparation process of the substrate. The preparation process includes the following steps that: (1) the upper surface of a ceramic substrate is coated or printed with a copper-based electronic paste; (2) sintering is performed in the air: a copper oxide layer is formed on the upper surface of the ceramic substrate, and the copper oxide layer and the ceramic substrate are made to be fully combined with each other; (3) sintering is performed under a reducing atmosphere: the copper oxide layer is completely reduced to copper, so that surface copper metallization of the ceramic substrate is realized; (4) electroless nickel plating is performed on the upper surface of a ceramic substrate copper metal layer; (5) electroless nickel plating is performed on the lower surface of aluminum foil; (6) brazing is performed between a ceramic substrate nickel plated layer and an aluminum foil nickel plated layer, so that the connection of the ceramic substrate and the aluminum foil can be realized; and (7) surface polishing processing is performed on the aluminum foil. The ceramic composite substrate manufactured through adopting the method of the invention has the advantages of high conductivity, high thermal conductivity and high adhesion. Secondary patterning elaborate processing can be performed on the ceramic composite substrate. The ceramic composite substrate can be applied to high-power LED encapsulation, so that a service life can be greatly prolonged, and reliability can be greatly improved.
Description
Technical field:
The present invention relates to a kind of high heat conduction, high light-emitting rate LED pottery and specular aluminium composite base plate and preparation technology, it belongs to electronics and optoelectronic packaging techniques field.
Background technology:
Along with the continuous increase of LED chip input power, the especially appearance of large power white light LED chip, thing followed thermal effect problem becomes the bottleneck that restriction LED performance improves further.The heat produced during LED chip work not only causes LED luminous efficiency to reduce, and the useful life of LED also can be declined along with the rising exponentially of chip node temperature.Therefore, the appearance of large power white light LED is had higher requirement to its encapsulating structure, and in system radiating, the encapsulating material of encapsulating structure reasonable in design and high heat radiation becomes research emphasis.
Novel ceramic substrate has that corrosion resistance is good, mechanical strength is high, thermal conductivity is high, chemical stability is good, and insulation property are high, the thermal coefficient of expansion that matches with chip and the high advantage of the good reliability of packaged stability, greatly can improve the luminous efficiency of LED.Although ceramic substrate has certain advantage, also there is ceramet wetability poor, metallization circuit preparation comparatively difficulty problem.
The main application of epoxy method for packing of current LED, due to the low heat conductivity (0.3W and mK) of epoxy resin, integral heat sink effect more can be had a strong impact on, and reduces the life-span of LED.
Therefore, necessary the deficiency solving prior art is improved to prior art.
Summary of the invention:
The present invention is directed to high-power LED encapsulation ceramic substrate preparation difficulty, the problem such as radiating effect and poor reliability, a kind of high heat conduction, high light-emitting rate LED pottery and specular aluminium composite base plate and preparation technology are provided, its technique is simple, cost of manufacture is low, good heat dissipation effect and can meet large power white light LED encapsulation requirement.
The present invention adopts following technical scheme: a kind of high heat conduction, high light-emitting rate LED pottery and specular aluminium composite base plate, the copper metal layer that it comprises ceramic substrate, sintering is arranged on ceramic substrate upper surface, aluminium foil above copper metal layer, be plated on copper metal layer upper surface ceramic substrate nickel coating, be plated on aluminium foil lower surface aluminium foil nickel coating and be brazed between ceramic substrate nickel coating and aluminium foil nickel coating to realize the brazing layer that ceramic substrate is connected with aluminium foil.
The present invention also adopts following technical scheme: a kind ofly prepare high heat conduction, high light-emitting rate LED pottery and the technique of specular aluminium composite base plate, and it comprises the steps:
(1) in the coating of ceramic substrate upper surface or print copper electronic paste;
(2) sinter in air: sintering temperature is 1000 DEG C ~ 1100 DEG C, and sintering time is 45 minutes, form Cu oxide layer at ceramic substrate upper surface, Cu oxide layer is combined completely with ceramic substrate;
(3) sinter under reducing atmosphere: sintering temperature is 600 DEG C ~ 900 DEG C, and sintering time is 30 minutes, make Cu oxide layer be reduced into copper completely, realize ceramic base plate surface copper metallization;
(4) at ceramic substrate copper metal layer upper surface chemical nickel plating;
(5) at aluminium foil lower surface chemical nickel plating;
(6) soldering between ceramic substrate nickel coating and aluminium foil nickel coating: brazing temperature is 250 DEG C, the holding time is 30 minutes, to realize the connection of ceramic substrate and aluminium foil;
(7) surface finish process is carried out to aluminium foil, increase reflecting rate and the fineness of pottery and specular aluminium composite base plate.
Further, the thickness of described copper oxide layer is 5-50 micron.
Further, described ceramic substrate is aluminium oxide or aluminium nitride ceramics.
Further, described brazing layer is SAC pricker layer.
The present invention has following beneficial effect:
(1). the pottery that the present invention produces and specular aluminium composite base plate any surface finish, have very high reflecting rate, and have the advantages such as desirable heat-conducting effect, low cost and stable physical property concurrently;
(2). the pottery that the present invention produces and specular aluminium composite base plate have height leads point, high heat conduction, high adhesion force, can carry out the superior functions such as secondary figure retrofit, is applied in high heat conduction, high light-emitting rate LED encapsulation and can significantly improves working life and reliability.
Accompanying drawing illustrates:
Fig. 1 is height heat conduction of the present invention, high light-emitting rate LED pottery and the cross-sectional schematic of specular aluminium composite base plate.
Fig. 2 is the high heat conduction prepared in Fig. 1, high light-emitting rate LED pottery and the flow chart of specular aluminium composite base plate.
Wherein:
1-ceramic substrate; 2-copper metal layer; 3-ceramic substrate nickel coating; 4-brazing layer; 5-aluminium foil nickel coating; 6-aluminium foil.
Embodiment:
Please refer to shown in Fig. 1, height heat conduction of the present invention, high light-emitting rate LED pottery and specular aluminium composite base plate comprise ceramic substrate 1, sintering is arranged on ceramic substrate 1 upper surface copper metal layer 2, aluminium foil 6 above copper metal layer 2, be plated on copper metal layer 2 upper surface ceramic substrate nickel coating 3, be plated on aluminium foil 6 lower surface aluminium foil nickel coating 5 and be brazed between ceramic substrate nickel coating 3 and aluminium foil nickel coating 5 and then realize the brazing layer 4 that ceramic substrate 1 is connected with aluminium foil 6.
Please refer to shown in Fig. 2, prepare height heat conduction of the present invention, high light-emitting rate LED technique that is ceramic and specular aluminium composite base plate comprises the steps:
(1) in the coating of ceramic substrate upper surface or print copper electronic paste;
(2) sinter in air: sintering temperature is 1000 DEG C ~ 1100 DEG C, and sintering time is 45 minutes, form Cu oxide layer at ceramic substrate upper surface, Cu oxide layer is combined completely with ceramic substrate;
(3) sinter under reducing atmosphere: sintering temperature is 600 DEG C ~ 900 DEG C, and sintering time is 30 minutes, make Cu oxide layer be reduced into copper completely, realize ceramic base plate surface copper metallization;
(4) at ceramic substrate copper metal layer upper surface chemical nickel plating;
(5) at aluminium foil lower surface chemical nickel plating;
(6) soldering between ceramic substrate nickel coating and aluminium foil nickel coating: brazing temperature is 250 DEG C, the holding time is 30 minutes, to realize the connection of ceramic substrate and aluminium foil;
(7) surface finish process is carried out to aluminium foil, increase reflecting rate and the fineness of pottery and specular aluminium composite base plate.
The thickness of the copper oxide layer formed in step of the present invention (2) is 5-50 micron.
In the present invention, ceramic substrate is aluminium oxide or aluminium nitride ceramics, the SAC pricker layer that brazing layer is mainly commercially available.
Below by a kind of concrete execution mode, height heat conduction of the present invention, high light-emitting rate LED pottery and the preparation technology of specular aluminium composite base plate are described:
(1) ceramic substrate upper surface copper coated electronic paste sinter 45 minutes at 1000 DEG C ~ 1100 DEG C in air, form Cu oxide layer at ceramic base plate surface, realize the combination of Cu oxide layer and ceramic substrate, oxide thickness is 20 microns;
(2) by the combination of the Cu oxide layer that obtains in step (1) and ceramic substrate, 800 DEG C ~ 900 DEG C are placed in, at N
2+ 5%H
2reducing atmosphere in sintering 30 minutes, Cu oxide is reduced into metallic copper completely, realizes ceramic base plate surface copper metallization;
(3) at ceramic substrate copper metal layer upper surface chemical nickel plating, aluminium foil lower surface chemical nickel plating;
(4) between ceramic substrate nickel coating and aluminium foil nickel coating, apply solder, at 250 DEG C, soldering 30 minutes, realizes the connection of aluminium foil and ceramic substrate;
(5) surface finish process is carried out to aluminium foil, increase fineness and the reflecting rate of aluminium foil, machinery, chemistry, electrobrightening combined treatment were entered to aluminium foil surface, when being applied to LED, light reflectance >=98%.
Better, vertical adhesive force is greater than 8Mpa for the copper metal layer of the present embodiment pottery and specular aluminium composite base plate and the adhesion of ceramic substrate.
The main technical characterstic of the present invention is after the oxidation of copper electronic paste and between ceramic substrate, chemical reaction occurs, realize the deposition of Cu oxide at ceramic substrate, the Cu oxide layer of ceramic base plate surface is reduced into copper under reducing atmosphere, realize ceramic substrate copper metallization, chemical nickel plating is carried out respectively again at copper metal layer upper surface and aluminium foil lower surface, again by applying the connection that solder realizes ceramic substrate and aluminium foil between ceramic substrate nickel coating and aluminium foil nickel coating, thereafter surface finish process is carried out to aluminium foil, increase reflecting rate and the fineness of pottery and specular aluminium composite base plate.
The above is only the preferred embodiment of the present invention, it should be pointed out that for those skilled in the art, can also make some improvement under the premise without departing from the principles of the invention, and these improvement also should be considered as protection scope of the present invention.
Claims (5)
1. a high heat conduction, high light-emitting rate LED pottery and specular aluminium composite base plate, it is characterized in that: comprise ceramic substrate (1), sintering is arranged on the copper metal layer (2) of ceramic substrate (1) upper surface, be positioned at the aluminium foil (6) of copper metal layer (2) top, be plated on the ceramic substrate nickel coating (3) of copper metal layer (2) upper surface, be plated on the aluminium foil nickel coating (5) of aluminium foil (6) lower surface, and be brazed between ceramic substrate nickel coating (3) and aluminium foil nickel coating (5) to realize the brazing layer (4) that ceramic substrate (1) is connected with aluminium foil (6).
2. prepare high heat conduction as claimed in claim 1, high light-emitting rate LED pottery and the technique of specular aluminium composite base plate, it is characterized in that: comprise the steps
(1) in the coating of ceramic substrate upper surface or print copper electronic paste;
(2) sinter in air: sintering temperature is 1000 DEG C ~ 1100 DEG C, and sintering time is 45 minutes, form Cu oxide layer at ceramic substrate upper surface, Cu oxide layer is combined completely with ceramic substrate;
(3) sinter under reducing atmosphere: sintering temperature is 600 DEG C ~ 900 DEG C, and sintering time is 30 minutes, make Cu oxide layer be reduced into copper completely, realize ceramic base plate surface copper metallization;
(4) at ceramic substrate copper metal layer upper surface chemical nickel plating;
(5) at aluminium foil lower surface chemical nickel plating;
(6) soldering between ceramic substrate nickel coating and aluminium foil nickel coating: brazing temperature is 250 DEG C, the holding time is 30 minutes, to realize the connection of ceramic substrate and aluminium foil;
(7) surface finish process is carried out to aluminium foil, increase reflecting rate and the fineness of pottery and specular aluminium composite base plate.
3. the technique of the ceramic and specular aluminium composite base plate of the high heat conduction of preparation as claimed in claim 2, high light-emitting rate LED, is characterized in that: the thickness of described copper oxide layer is 5-50 micron.
4. the technique of the ceramic and specular aluminium composite base plate of the high heat conduction of preparation as claimed in claim 2, high light-emitting rate LED, is characterized in that: described ceramic substrate is aluminium oxide or aluminium nitride ceramics.
5. the technique of the ceramic and specular aluminium composite base plate of the high heat conduction of preparation as claimed in claim 2, high light-emitting rate LED, is characterized in that: described brazing layer is SAC pricker layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410652163.8A CN104485397A (en) | 2014-11-17 | 2014-11-17 | High-thermal conductivity and high-light extracting efficiency ceramic and mirror aluminum composite substrate for LED and preparation process of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410652163.8A CN104485397A (en) | 2014-11-17 | 2014-11-17 | High-thermal conductivity and high-light extracting efficiency ceramic and mirror aluminum composite substrate for LED and preparation process of substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104485397A true CN104485397A (en) | 2015-04-01 |
Family
ID=52759922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410652163.8A Pending CN104485397A (en) | 2014-11-17 | 2014-11-17 | High-thermal conductivity and high-light extracting efficiency ceramic and mirror aluminum composite substrate for LED and preparation process of substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104485397A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870308A (en) * | 2016-04-30 | 2016-08-17 | 浙江单色电子科技有限公司 | Inorganic encapsulation direct-plug type violet LED and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011176303A (en) * | 2010-01-29 | 2011-09-08 | Asahi Glass Co Ltd | Substrate for mounting light emitting element and method for manufacturing the same |
| CN103855036A (en) * | 2012-11-30 | 2014-06-11 | 南京尚孚电子电路有限公司 | Manufacture method of polycrystalline chip on board (COB) encapsulation mirror surface aluminum substrate |
-
2014
- 2014-11-17 CN CN201410652163.8A patent/CN104485397A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011176303A (en) * | 2010-01-29 | 2011-09-08 | Asahi Glass Co Ltd | Substrate for mounting light emitting element and method for manufacturing the same |
| CN103855036A (en) * | 2012-11-30 | 2014-06-11 | 南京尚孚电子电路有限公司 | Manufacture method of polycrystalline chip on board (COB) encapsulation mirror surface aluminum substrate |
Non-Patent Citations (2)
| Title |
|---|
| 方军: ""大功率LED用COB陶瓷基板的制备及封装性能"", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
| 钱斐等: ""陶瓷基板及钎焊技术对LED散热性能的影响"", 《电子元件与材料》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870308A (en) * | 2016-04-30 | 2016-08-17 | 浙江单色电子科技有限公司 | Inorganic encapsulation direct-plug type violet LED and manufacturing method thereof |
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Application publication date: 20150401 |