CN203339214U - A multi-ceramic-layer LED packaging structure - Google Patents
A multi-ceramic-layer LED packaging structure Download PDFInfo
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- CN203339214U CN203339214U CN2013203449511U CN201320344951U CN203339214U CN 203339214 U CN203339214 U CN 203339214U CN 2013203449511 U CN2013203449511 U CN 2013203449511U CN 201320344951 U CN201320344951 U CN 201320344951U CN 203339214 U CN203339214 U CN 203339214U
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Abstract
The utility model relates to a multi-ceramic-layer LED packaging structure comprising a metallic basic body on which a voltage-withstanding ceramic layer and a high heat conductive ceramic layer are formed successively. Metallic circuit layers and a fluorescent ceramic layer are formed on the high heat conductive ceramic layer. A LED chip is disposed on the metallic circuit layers and the fluorescent ceramic layer. A printed circuit board described in the utility model comprises multiple functional ceramic layers and is capable of achieving purposes of heat conduction, high-voltage breakdown resistance, and increase in LED luminous efficiency.
Description
Technical field
The utility model belongs to electronic technology field, and in particular, the utility model relates to a kind of LED of many ceramic layers for optics encapsulating structure.
Background technology
For the device of optics and/or electronics, as integrated circuit or laser diode all need to utilize heat conducting material to be conducted heat.Need to adopt metallic matrix for this reason, as the copper matrix, and often need the electricity isolation between the device of described optics and/or electronics and metallic matrix.And some ceramic material has higher heat conduction efficiency and electricity is insulated.The ceramic material that for this reason between the device of be everlasting optics and/or electronics and metallic matrix, uses high heat conduction is as for providing electricity isolation and the conductive intermediate materials of maintaining heat still.For the efficient heat transfer from the device of optics and/or electronics to metallic matrix is provided, it is essential that good hot interface is provided between pottery and metallic matrix.Development along with the device of optics and/or electronics, performance requirement to them is also more and more harsher, for example need further to improve the integrated level of integrated circuit, need the luminous efficiency of raising LED etc., thereby the performance requirement to described ceramic inter-layer is also more and more higher, for example as ceramic inter-layer not only need to there is high thermal conductivity, the electric insulation rate, also need to there is high voltage breakdown intensity, also need to have fluorescent characteristic; And these performance requirements often are difficult to realize by single ceramic functional layer, and research also shows also to be difficult to meet all demands by composite ceramic coat, and composite ceramic coat due to the thermal coefficient of expansion of each component, often difference is larger, repeatedly experience under the circulation environment of different temperatures, the internal stress of generation may cause ceramic layer to crack and even cause fracture failure.
The utility model content
In order to solve above-mentioned technical problem of the prior art, the purpose of this utility model is to provide a kind of many ceramic layers LED encapsulating structure.
To achieve these goals, the utility model has adopted following technical scheme:
Many ceramic layers LED encapsulating structure described in the utility model, comprise metallic matrix, and be formed with successively withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating on described metallic matrix, on described highly heat-conductive carbon/ceramic enamel coating, is formed with metallic circuit layer and luminescent ceramic layer; And be provided with LED chip on described metallic circuit layer and luminescent ceramic layer.
Wherein, described luminescent ceramic layer is rear-earth-doped ceramic layer, and the thickness of described luminescent ceramic layer is 10-100 um; Described luminescent ceramic layer is for example the YAG layer of Ce doping or the SiN layer of Eu doping.
Wherein, the thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500 um; The example of described highly heat-conductive carbon/ceramic enamel coating is as AlN, AlON or SiN.Described highly heat-conductive carbon/ceramic enamel coating can be realized laterally and the conduction of heat radially, solves the heat dissipation problem of optics and/or electronic unit.
Wherein, the thickness of described withstand voltage ceramic layer is 10-500 um; The example of described withstand voltage ceramic layer is as Al
2o
3, AlON or SiC.Described withstand voltage ceramic layer can prevent the problem of high electrical breakdown, improves the safety and stability of described structure.
Wherein, described luminescent ceramic layer, highly heat-conductive carbon/ceramic enamel coating and withstand voltage ceramic layer can form by powder sintering.
Wherein, between described metal substrate and withstand voltage ceramic layer, between withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, and all there is brazing layer between highly heat-conductive carbon/ceramic enamel coating and luminescent ceramic layer.
The technical solution of the utility model has following beneficial effect compared to existing technology:
(1) in many ceramic layers LED encapsulating structure described in the utility model, described luminescent ceramic layer can be converted into visible ray by the LED blue light, thereby can significantly improve light efficiency.
(2), in many ceramic layers LED encapsulating structure described in the utility model, described highly heat-conductive carbon/ceramic enamel coating can be realized laterally and the conduction of heat radially, solves the heat dissipation problem of optics and/or electronic unit.
(3) in many ceramic layers LED encapsulating structure described in the utility model, described withstand voltage ceramic layer has high proof voltage breakdown performance.
The accompanying drawing explanation
The structural representation that Fig. 1 is the described many ceramic layers LED of the utility model embodiment 1 encapsulating structure.
Embodiment
embodiment 1
As shown in Figure 1, the described many ceramic layers LED of the present embodiment encapsulating structure, comprise metallic matrix 10, and be formed with successively withstand voltage ceramic layer 20 and highly heat-conductive carbon/ceramic enamel coating 30 on described metallic matrix 10, be formed with metallic circuit layer 40 and luminescent ceramic layer 50 on described highly heat-conductive carbon/ceramic enamel coating 30; And be provided with LED chip 60 on described metallic circuit layer 40 and luminescent ceramic layer 50.Described luminescent ceramic layer is rear-earth-doped ceramic layer, and the thickness of described luminescent ceramic layer is 10-100 um; And be preferably the YAG layer of Ce doping or the SiN layer of Eu doping.The thickness of described highly heat-conductive carbon/ceramic enamel coating is 10-500 um; And be preferably AlN, AlON or SiN.Described highly heat-conductive carbon/ceramic enamel coating can be realized laterally and the conduction of heat radially, solves the heat dissipation problem of optics and/or electronic unit.The thickness of described withstand voltage ceramic layer is 10-500 um; And be preferably Al
2o
3, AlON or SiC.Described withstand voltage ceramic layer can prevent the problem of high electrical breakdown, improves the safety and stability of described structure.Described luminescent ceramic layer, highly heat-conductive carbon/ceramic enamel coating and withstand voltage ceramic layer form by powder sintering.And between described metal substrate and withstand voltage ceramic layer, between withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, and all by soldered joint, form brazing layer between highly heat-conductive carbon/ceramic enamel coating and luminescent ceramic layer.
For the ordinary skill in the art, be to be understood that and can not breaking away from the utility model scope of disclosure, can adopt to be equal to and replace or equivalent transformation form enforcement above-described embodiment.Protection range of the present utility model is not limited to the specific embodiment of embodiment part, as long as no the execution mode that breaks away from utility model essence, within all being interpreted as dropping on the protection range of the utility model requirement.
Claims (5)
1. the encapsulating structure of ceramic layer LED more than a kind, comprise metallic matrix, it is characterized in that being formed with successively withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating on described metallic matrix, on described highly heat-conductive carbon/ceramic enamel coating, is formed with metallic circuit layer and luminescent ceramic layer; And be provided with LED chip on described metallic circuit layer and luminescent ceramic layer.
2. many ceramic layers LED encapsulating structure according to claim 1, the thickness that it is characterized in that described luminescent ceramic layer is 10-100 um.
3. many ceramic layers LED encapsulating structure according to claim 1 and 2, the thickness that it is characterized in that described highly heat-conductive carbon/ceramic enamel coating is 10-500 um.
4. many ceramic layers LED encapsulating structure according to claim 1 and 2, the thickness that it is characterized in that described withstand voltage ceramic layer is 10-500 um.
5. many ceramic layers LED encapsulating structure according to claim 1 and 2, is characterized in that between described metal substrate and withstand voltage ceramic layer, between withstand voltage ceramic layer and highly heat-conductive carbon/ceramic enamel coating, and have brazing layer between highly heat-conductive carbon/ceramic enamel coating and luminescent ceramic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203449511U CN203339214U (en) | 2013-06-17 | 2013-06-17 | A multi-ceramic-layer LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203449511U CN203339214U (en) | 2013-06-17 | 2013-06-17 | A multi-ceramic-layer LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203339214U true CN203339214U (en) | 2013-12-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203449511U Expired - Fee Related CN203339214U (en) | 2013-06-17 | 2013-06-17 | A multi-ceramic-layer LED packaging structure |
Country Status (1)
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354254A (en) * | 2013-06-17 | 2013-10-16 | 苏州晶品光电科技有限公司 | Multi-ceramic-layer LED packaging structure |
| CN108364941A (en) * | 2018-04-18 | 2018-08-03 | 广州东有电子科技有限公司 | Double-side LED light source structure based on COB encapsulating structures |
| CN109585626A (en) * | 2017-09-29 | 2019-04-05 | 李宜臻 | The compound material-strap structure of cermet and its manufacturing method and its light emitting diode |
-
2013
- 2013-06-17 CN CN2013203449511U patent/CN203339214U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354254A (en) * | 2013-06-17 | 2013-10-16 | 苏州晶品光电科技有限公司 | Multi-ceramic-layer LED packaging structure |
| CN103354254B (en) * | 2013-06-17 | 2015-11-18 | 苏州晶品光电科技有限公司 | Many ceramic layers LED encapsulation structure |
| CN109585626A (en) * | 2017-09-29 | 2019-04-05 | 李宜臻 | The compound material-strap structure of cermet and its manufacturing method and its light emitting diode |
| CN108364941A (en) * | 2018-04-18 | 2018-08-03 | 广州东有电子科技有限公司 | Double-side LED light source structure based on COB encapsulating structures |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SUZHOU JINGPIN ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: SUZHOU JINGPIN PHOTOELECTRIC TECHNOLOGY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: Wujiang District of Suzhou City, Jiangsu province 215200 Lili town FENHU Road No. 558 Patentee after: Suzhou Jing Pin new material limited company Address before: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee before: Suzhou Jingpin Optical-Electronical Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131211 Termination date: 20160617 |