CN202487666U

CN202487666U - Packaging structure for high-power LEDs

Info

Publication number: CN202487666U
Application number: CN2012200566311U
Authority: CN
Inventors: 王清平
Original assignee: GUANGDONG KELIYING PHOTOELECTRIC TECHNOLOGY Co Ltd
Current assignee: GUANGDONG KELIYING PHOTOELECTRIC TECHNOLOGY Co Ltd
Priority date: 2012-02-22
Filing date: 2012-02-22
Publication date: 2012-10-10
Anticipated expiration: 2022-02-22

Abstract

The utility model discloses a packaging structure for high-power LEDs. The packaging structure comprises a metal heat-radiation substrate and an LED chip arranged below the metal heat-radiation substrate and covered by fluorescent packaging adhesive. The metal heat-radiation substrate and the LED chip are sequentially provided with an aluminum nitride ceramic heat conductive layer, an insulation film and electrode pieces, wherein the electrode pieces includes a positive electrode piece and a negative electrode piece which are connected with pins of a positive electrode and a negative electrode of the LED chip respectively. In the high-insulation packaging structure improved reasonably and for high-power LEDs, the aluminum nitride ceramic heat conductive layer and the insulation film are arranged between the chip and the metal substrate, and aluminum nitride ceramic has excellent heat conductivity and electric insulation performance, is free of affecting heat radiation and capable of insulating the chip and the metal substrate.

Description

The encapsulating structure of great power LED

Technical field

The utility model relates to the LED field of illuminating device, is specially a kind of encapsulating structure of great power LED of effective raising insulation property.

Background technology

Along with LED lamp development of technology and people to energy-conservation pay attention to day by day; Compare the more energy-conservation LED luminaire of traditional lighting device and receive an acclaim day by day, use more and more wider, common led chip encapsulating structure and adopt conduction or non-conductive adhesive that led chip is contained on the radiating block; Use epoxy encapsulation again after connecting with lead; Its thermal resistance is up to 300 ℃/W, and the LED lamp outer casing also must be through the high-tension electricity test, to confirm safety standard.But in the such scheme, when light fixture was connected high-tension electricity, led chip, radiating block were connected with lamp outer casing; And radiating block is the metallic conduction material; Cause chip to damage easily, junction temperature of chip rising simultaneously and epoxy carbonization also can cause optical attenuation, therefore; Need a kind of ability through the high-tension electricity test, and with chip directly the scheme of encapsulation to address the above problem.

Summary of the invention

In order to overcome the deficiency of prior art, the utility model provides a kind of encapsulating structure of great power LED of effective raising insulation property.

The utility model solves the technical scheme that its technical problem adopted:

The encapsulating structure of great power LED; Comprise the heat dissipation metal substrate and be arranged on the led chip under the heat dissipation metal substrate; And cover led chip through the fluorescence packing colloid; Said heat dissipation metal substrate and led chip are disposed with aluminium nitride ceramics heat-conducting layer, insulating layer of thin-film and electrode slice, and wherein electrode slice is made up of electrode film and negative electrode plate, and said electrode film is connected with the pin of led chip positive and negative electrode respectively with negative electrode plate.

In order to guarantee insulation effect, said insulating layer of thin-film thickness is 2～5 μ m.

In order to improve radiating effect, said heat dissipation metal substrate top is provided with fin.

For the ease of the connection energising of led chip, said electrode film and negative electrode plate coiled semicircle arcuation respectively are distributed in the insulating layer of thin-film both sides.

The beneficial effect of the utility model is: this encapsulating structure is through the rational structure transformation; The high-power LED lamp encapsulating structure of its high insulating property uses aluminium nitride ceramics heat-conducting layer, insulating layer of thin-film between chip and radiating block; Aluminium nitride ceramics has good heat-conducting, and has the excellent electric insulating ability again, neither influence heat radiation; Make again between chip and the radiating block and insulate; The fluorescence packing colloid adopts the mixing fluorescent glue of laser ceramics and glue, even when temperature raises, also can keep bringing into play the effect that blue light changes white light, better reliability.

Description of drawings

Below in conjunction with accompanying drawing and embodiment the utility model is further specified.

Fig. 1 is the side-looking structure chart of the utility model;

Fig. 2 is the plan structure figure of the utility model.

Embodiment

With reference to Fig. 1, Fig. 2; The encapsulating structure of great power LED; Comprise heat dissipation metal substrate 1 and be arranged on the led chip 2 under the heat dissipation metal substrate 1; And cover led chip 2 get up through fluorescence packing colloid 3, said heat dissipation metal substrate 1 is disposed with aluminium nitride ceramics heat-conducting layer 4, insulating layer of thin-film 5 and electrode slice 6 with led chip 2.Electrode slice 6 is made up of electrode film 61 and negative electrode plate 62.Electrode film 61 and negative electrode plate 62 coiled semicircle arcuation respectively are distributed in insulating layer of thin-film 5 both sides, and said electrode film 61 is connected with the pin 21 of led chip 2 positive and negative electrodes respectively with negative electrode plate 62.

Said fluorescence packing colloid 3 can be selected YAG laser ceramics and the composite fluorescence packaging plastic of annular resin for use, and YAG fluorescent material passes through rare earth ions such as its Tb, Ce, Eu as fluorescent material.

Insulating layer of thin-film 5 can adopt aluminium nitride ceramics or magnetron sputtering plating, and wherein thickness is preferably 2～5 μ m.

In order to improve radiating effect, said heat dissipation metal substrate 1 top is provided with fin 11.

The utility model uses aluminium nitride ceramics heat-conducting layer 4, insulating layer of thin-film 5 between led chip 2 and heat dissipation metal substrate 1 through the rational structure transformation, and aluminium nitride ceramics has good heat-conducting; And have again excellent electric insulating can; Neither influence heat radiation makes insulation between led chip 2 and the heat dissipation metal substrate 1 again, and fluorescence packing colloid 3 adopts the mixing fluorescent glue of laser ceramics and glue; Even when temperature raises, also can keep bringing into play the effect that blue light changes white light, better reliability.

Claims

1. the encapsulating structure of great power LED; It is characterized in that: comprise heat dissipation metal substrate (1) and be arranged on the led chip (2) under the heat dissipation metal substrate (1); And cover led chip (2) through fluorescence packing colloid (3); Said heat dissipation metal substrate (1) and led chip (2) are disposed with aluminium nitride ceramics heat-conducting layer (4), insulating layer of thin-film (5) and electrode slice (6); Wherein electrode slice (6) is made up of electrode film (61) and negative electrode plate (62), and said electrode film (61) is connected with the pin (21) of led chip (2) positive and negative electrode respectively with negative electrode plate (62).

2. the encapsulating structure of great power LED according to claim 1, it is characterized in that: said insulating layer of thin-film (5) thickness is 2～5 μ m.

3. the encapsulating structure of great power LED according to claim 1, it is characterized in that: said heat dissipation metal substrate (1) top is provided with fin (11).

4. the encapsulating structure of great power LED according to claim 1, it is characterized in that: said electrode film (61) and negative electrode plate (62) coiled semicircle arcuation respectively are distributed in insulating layer of thin-film (5) both sides.