CN203339224U - A SMD LED packaging structure - Google Patents
A SMD LED packaging structure Download PDFInfo
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- CN203339224U CN203339224U CN2013203447573U CN201320344757U CN203339224U CN 203339224 U CN203339224 U CN 203339224U CN 2013203447573 U CN2013203447573 U CN 2013203447573U CN 201320344757 U CN201320344757 U CN 201320344757U CN 203339224 U CN203339224 U CN 203339224U
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- ceramic layer
- smd led
- withstand voltage
- layer
- encapsulating structure
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Abstract
The utility model relates to a SMD LED packaging structure comprising a metallic basic body on which a voltage-withstanding ceramic layer is formed. Metallic circuit layers and a ceramic layer are formed on the voltage-withstanding ceramic layer. A SMN LED lamp bead is disposed on the metallic circuit layers and the ceramic layer. In the SMD LED packaging structure, the ceramic layer is capable of achieving transverse and radical heat conduction. The voltage-withstanding ceramic layer has high voltage-breakdown-resistant performance.
Description
Technical field
The utility model belongs to electronic technology field, and in particular, the utility model relates to a kind of LED of the SMD for optics encapsulating structure.
Background technology
For the device of optics and/or electronics, as integrated circuit or laser diode all need to utilize heat conducting material to be conducted heat.Need to adopt metallic matrix for this reason, as the copper matrix, and often need the electricity isolation between the device of described optics and/or electronics and metallic matrix.And some ceramic material has higher heat conduction efficiency and electricity is insulated.The ceramic material for this reason used between the device of be everlasting optics and/or electronics and metallic matrix is as for providing electricity isolation and the conductive intermediate materials of maintaining heat still.For the efficient heat transfer from the device of optics and/or electronics to metallic matrix is provided, it is essential that good hot interface is provided between pottery and metallic matrix.Development along with the device of optics and/or electronics, performance requirement to them is also more and more harsher, for example need further to improve the integrated level of integrated circuit, need the luminous efficiency of raising LED etc., thereby the performance requirement to described ceramic inter-layer is also more and more higher, for example as ceramic inter-layer not only need to there is high thermal conductivity, the electric insulation rate, also need to there is high voltage breakdown intensity, also need to have fluorescent characteristic; And these performance requirements often are difficult to realize by single ceramic functional layer, and research also shows also to be difficult to meet all demands by composite ceramic coat, and composite ceramic coat due to the thermal coefficient of expansion of each component, often difference is larger, repeatedly experience under the circulation environment of different temperatures, the internal stress of generation may cause ceramic layer to crack and even cause fracture failure.
The utility model content
In order to solve above-mentioned technical problem of the prior art, the purpose of this utility model is to provide a kind of SMD LED encapsulating structure.
To achieve these goals, the utility model has adopted following technical scheme:
Described SMD LED encapsulating structure, comprise metallic matrix, and be formed with withstand voltage ceramic layer on described metallic matrix, on described withstand voltage ceramic layer, is formed with metallic circuit layer and ceramic layer; And be provided with SMD LED lamp pearl on described metallic circuit layer and ceramic layer.
Wherein, the thickness of described ceramic layer is 10-500um; And described ceramic layer can be selected AlN, AlON or SiN.Described ceramic layer can be realized laterally and the conduction of heat radially, solve the heat dissipation problem of SMD LED lamp pearl.
Wherein, the thickness of described withstand voltage ceramic layer is 10-500um; And described withstand voltage ceramic layer can be selected Al
2o
3, AlON or SiC.Described withstand voltage ceramic layer can prevent the problem of high electrical breakdown, improves the safety and stability of described structure.
Wherein, described ceramic layer soldered joint to described withstand voltage ceramic layer, thereby form brazing layer between the two.
Wherein, also there is transition zone between described withstand voltage ceramic layer and described metallic matrix.
The technical solution of the utility model has following beneficial effect compared to existing technology:
(1) in SMD LED encapsulating structure described in the utility model, the thermal conductivity of described ceramic layer is greater than 50W/mK, can realize laterally and the conduction of heat radially, solves the heat dissipation problem of optics and/or electronic unit.
(2) in SMD LED encapsulating structure described in the utility model, described withstand voltage ceramic layer has high proof voltage breakdown performance.
The accompanying drawing explanation
The schematic diagram that Fig. 1 is the described SMD LED of the utility model embodiment 1 encapsulating structure.
Embodiment
Embodiment 1
As shown in Figure 1, the described SMD LED of the present embodiment encapsulating structure, comprise metallic matrix 10, and be formed with withstand voltage ceramic layer 20 on described metallic matrix, on described withstand voltage ceramic layer 20, is formed with metallic circuit layer 30 and ceramic layer 40; And be provided with SMDLED lamp pearl 50 on described metallic circuit layer 30 and ceramic layer 40.The thickness of described ceramic layer is 10-500um; And described ceramic layer is preferably AlN, AlON or SiN.Described ceramic layer can be realized laterally and the conduction of heat radially, solve the heat dissipation problem of SMD LED lamp pearl.Described ceramic layer forms by powder sintering, and utilizes soldered joint to form the brazing layer (not shown) to described withstand voltage ceramic layer.The thickness of described withstand voltage ceramic layer is 10-500um; And described withstand voltage ceramic layer is preferably Al
2o
3, AlON or SiC.Described withstand voltage ceramic layer can prevent the problem of high electrical breakdown, improves the safety and stability of described structure.Described withstand voltage ceramic layer obtains by sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition legal system are standby.Preferably, obtain described withstand voltage ceramic layer by the arc deposited legal system is standby.In addition, as preferably, between described withstand voltage ceramic layer and described metallic matrix, also there is transition zone.And described metallic circuit layer is by sputter, evaporation, arc deposited, chemical vapour deposition (CVD) or plasma reinforced chemical vapour deposition metal level, and obtain described metallic circuit layer by dry ecthing.
For the ordinary skill in the art, be to be understood that and can not breaking away from the utility model scope of disclosure, can adopt to be equal to and replace or equivalent transformation form enforcement above-described embodiment.Protection range of the present utility model is not limited to the specific embodiment of embodiment part, as long as no the execution mode that breaks away from utility model essence, within all being interpreted as dropping on the protection range of the utility model requirement.
Claims (5)
1. a SMD LED encapsulating structure, comprise metallic matrix, it is characterized in that being formed with withstand voltage ceramic layer on described metallic matrix, and be formed with metallic circuit layer and ceramic layer on described withstand voltage ceramic layer; And be provided with SMD LED lamp pearl on described metallic circuit layer and ceramic layer.
2. SMD LED encapsulating structure according to claim 1, the thickness that it is characterized in that described ceramic layer is 10-500um.
3. SMD LED encapsulating structure according to claim 1 and 2, the thickness that it is characterized in that described withstand voltage ceramic layer is 10-500um.
4. SMD LED encapsulating structure according to claim 2, is characterized in that having brazing layer between described ceramic layer and described withstand voltage ceramic layer.
5. SMD LED encapsulating structure according to claim 1 and 2, is characterized in that having transition zone between described withstand voltage ceramic layer and described metallic matrix.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203447573U CN203339224U (en) | 2013-06-17 | 2013-06-17 | A SMD LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203447573U CN203339224U (en) | 2013-06-17 | 2013-06-17 | A SMD LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203339224U true CN203339224U (en) | 2013-12-11 |
Family
ID=49707884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203447573U Expired - Fee Related CN203339224U (en) | 2013-06-17 | 2013-06-17 | A SMD LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203339224U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106793471A (en) * | 2017-01-20 | 2017-05-31 | 昆山福烨电子有限公司 | A kind of ceramic circuit-board |
-
2013
- 2013-06-17 CN CN2013203447573U patent/CN203339224U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106793471A (en) * | 2017-01-20 | 2017-05-31 | 昆山福烨电子有限公司 | A kind of ceramic circuit-board |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: SUZHOU JINGPIN ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: SUZHOU JINGPIN PHOTOELECTRIC TECHNOLOGY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: Wujiang District of Suzhou City, Jiangsu province 215200 Lili town FENHU Road No. 558 Patentee after: Suzhou Jing Pin new material limited company Address before: FenHu FenHu Avenue in Wujiang District of Suzhou City, Jiangsu province 215211 No. 558 No. two on the third floor of the building of scientific research innovation park (South) Patentee before: Suzhou Jingpin Optical-Electronical Technology Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131211 Termination date: 20160617 |