CN105514231B - A kind of low-stress state compound substrate for GaN growth - Google Patents
A kind of low-stress state compound substrate for GaN growth Download PDFInfo
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Abstract
The invention discloses a kind of low-stress state compound substrate for GaN growth, the thermal conductivity substrate including a fusing point greater than 1000 DEG C, the high-melting-point thermal conductivity bonding medium layer on the substrate, GaN single crystal epitaxial layer and the stress compensation layer in the preparation of thermal conductivity substrate back.Wherein GaN epitaxy piece and thermal conductivity substrate are bonded together with High temperature diffusion bonding techniques.Compound substrate prepared by the present invention, both the advantages of having taken into account homoepitaxy that the compound substrate that previous transfer is realized has and can directly having prepared vertical structure device, there is low-stress state and high-temperature stability again, the quality of subsequent GaN epitaxy growth and chip preparation can be effectively improved.
Description
Technical field
The present invention relates to semiconductor photoelectronic device technical field, in particular to a kind of low stress shape for GaN growth
The compound substrate of state and high-temperature stable.
Background technique
Broad stopband GaN base semiconductor material have excellent photoelectric characteristic, be widely used in make light emitting diode,
Laser, ultraviolet detector and high temperature, high frequency, high power electronic device, and can apply to high-end micro- needed for preparation aerospace
Electronic device has become international photoelectron neck such as high mobility transistor (HEMT) and heterojunction transistor (HFET)
The research hotspot in domain.
Since preparing for GaN body monocrystalline is extremely difficult, large size single crystal GaN is difficult to directly obtain, and expensive, GaN
The epitaxial growth of material system is mainly based upon the heterogeneous epitaxial technology of big mismatch.Currently, industry the most commonly used is stability compared with
Two-step growth method extension GaN material is used in the Sapphire Substrate of good relative low price, it is this heterogeneous outer based on buffer layer
Prolong technology and achieve huge success, wherein blue and green light LED has been carried out commercialization, but process for sapphire-based GaN compound substrate
Shown biggish limitation, problem is mainly reflected in: (1) sapphire is insulating materials, and related device is caused to cannot achieve
Vertical structure can only use ipsilateral step electrode structure, and electric current is lateral injection, cause the current unevenness for flowing through active layer even,
Cause electric current to cluster round effect, reduce stock utilization, while increasing lithography and etching technique in device preparation, dramatically increases
Cost；(2) sapphire heating conduction is bad, and at 1000 DEG C, thermal conductivity is about 0.25W/cmK, and heat dissipation problem is prominent, influences
The electricity of GaN base device, optical characteristics and long-range functional reliability, and limit its answering on high temperature and high power device
With；(3) sapphire hardness is higher, and there are one 30 ° of angles between sapphire crystal lattice and GaN lattice, so being not easy cleavage, no
The Cavity surface of GaN base device can be obtained by the method for cleavage.
Silicon substrate have thermal conductivity is excellent, cost is relatively low, it is easy to accomplish large scale and it is integrated the advantages that, become close
One of the important subject of several years GaN base LED fields, however the lattice mismatch and thermal mismatching between silicon and GaN are serious, at present silicon
The technology also prematurity of GaN epitaxial layer is grown on substrate, compound substrate Dislocations density is higher, or even occurs being cracked and crackle.
Silicon carbide is the ideal substrate of extension GaN, its lattice mismatch and thermal mismatching between GaN is smaller, and has good thermally conductive lead
Electrical property can greatly simplify manufacture craft, but silicon carbide substrates is expensive, and there are adhesivenesses etc. between epitaxial layer and substrate
Problem should not carry out industrialized production.
With going deep into for research, there is a growing awareness that homoepitaxy is to obtain the optimal selection of high-performance GaN substrate.
In view of the high price of GaN single crystal substrate, some research institution begins to focus on medium bonding and mutually ties with laser lift-off
GaN epitaxy single crystalline layer is transferred on the substrate of the high conductivity of high heat conductance by the technology of conjunction, to eliminate the unfavorable of Sapphire Substrate
It influences.Existing patent (number of patent application are as follows: 201210068033.0 and number of patent application are as follows: 201210068026.0) to being based on
The compound substrate and preparation method thereof of low-temperature bonding and laser lift-off technique preparation for GaN growth is described, but at present
Thermal conductivity GaN compound substrate is prepared using medium bonding and laser lift-off, there are the following problems: (1) mainly adopting in the past
It is bonded with 600 DEG C or less lower temperatures, high-temperature stability is poor, under subsequent 1000 DEG C or more high temperature when epitaxial growth GaN
It can change again again through molding bonding structure, seriously affect the quality of later period homoepitaxy and chip preparation；(2) substrate
Larger stress is generated in the substrate of the variation of shifting process and thermal conductivity substrate after the transfer, causes compound substrate to occur certain
Warpage, or even wrinkle are formed on GaN epitaxy film, it is difficult to realize high-performance GaN single crystal extension and chip preparation.Poor high temperature
Stability and serious stress remnants be restrict substrate transfer technology further applied in high-performance GaN compound substrate it is main
Reason.
Summary of the invention
The object of the present invention is to provide a kind of low-stress state compound substrates for GaN growth, are expanded using high temperature
It dissipates bonding and GaN epitaxy film is transferred on thermal conductivity substrate by substrate desquamation technique from Sapphire Substrate, and in thermal conductivity
Transfer substrate back prepares stress compensation layer, to offset most of stress in transfer process in substrate, obtained composite lining
Bottom is suitable for homoepitaxy and prepares vertical structure LED device, is provided simultaneously with low-stress state and high-temperature stability, can effectively mention
High subsequent GaN epitaxy and the quality of chip preparation, have biggish development prospect.
A kind of low-stress state compound substrate for GaN growth of the present invention, including a thermal conductivity substrate and be located at should
High-melting-point thermal conductivity bonding medium layer and GaN single crystal epitaxial layer on substrate, and be prepared for using in thermal conductivity substrate back
In the stress compensation layer for offsetting stress.
As shown in Figure 1, a kind of low-stress state compound substrate for GaN growth proposed by the present invention, including (from it is lower to
On be arranged successively) stress compensation layer, thermal conductivity substrate, thermal conductivity bonding medium layer disposed thereon and GaN single crystal extension
Layer.
Above-mentioned thermal conductivity bonding medium layer with a thickness of 10 nanometers to 100 microns, preferably 500 nanometers to 20 microns；
Thermal conductivity substrate with a thickness of 10 microns to 3000 microns, preferably 50 microns to 1000 microns；The thickness of stress compensation layer
It is 0.1 micron to 300 microns, preferably 10 microns to 100 microns.
Above-mentioned bonding medium layer, thermal conductivity substrate and stress compensation layer are required to have following feature: 1) resistance to height
Temperature, fusing point are more than 1000 DEG C, and without violent diffusion phenomena；(2) has thermal conductivity.
The GaN epitaxy that above-mentioned stress compensation layer must come in the stress that thermal conductivity substrate back generates with transfer
GaN, SiN may be selected on the contrary, the stress compensation layer material in stress caused by layerxEqual nitride materials or molybdenum
(Mo), one of titanium (Ti), palladium (Pd), golden (Au), copper (Cu), tungsten (W), nickel (Ni), chromium (Cr) elemental metals or several
Alloy.
By requirements above, which can choose molybdenum (Mo), titanium (Ti), palladium (Pd), gold
(Au), one of copper (Cu), tungsten (W), nickel (Ni), chromium (Cr) elemental metals or several alloys or resin matrix and
One of conducting particles silver (Ag), golden (Au), copper (Cu), aluminium (Al), zinc (Zn), iron (Fe), nickel (Ni), graphite (C) are more
The particle and adhesive, solvent, auxiliary agent institute group of conducting polymer or one of the above or a variety of conducting particles that kind is constituted
At electrocondution slurry silicate-base high-temperature electric conduction glue (HSQ) or nickel (Ni), chromium (Cr), silicon (Si), boron (B) etc.
The high temperature alloy slurry that metal is formed.
By requirements above, which shifts substrate material, can choose molybdenum (Mo), titanium (Ti), palladium (Pd), copper
(Cu), one of tungsten (W), nickel (Ni), chromium (Cr) elemental metals or several alloys or silicon (Si) crystal, silicon carbide
(SiC) crystal or AlSi crystal.
Above-mentioned stress compensation layer and thermal conductivity bonding medium layer, may each be single or multi-layer structure.
GaN epitaxial layer used in above-mentioned substrate transfer process with a thickness of 1 micron to 100 microns, preferably 3 microns are extremely
50 microns, and GaN exists in the form of monocrystalline.
Above-mentioned stress compensation layer, it is heavy using magnetron sputtering, molecular beam epitaxy, plasma enhanced chemical vapor to may be selected
Product, Metallo-Organic Chemical Vapor deposition either vacuum thermal evaporation technology, prepare at the back side of thermal conductivity substrate.
Above-mentioned thermal conductivity bonding medium layer is prepared then using magnetron sputtering or vacuum thermal evaporation or wet processing in GaN
The surface of epitaxial film and thermal conductivity substrate.
Between above-mentioned thermal conductivity substrate and GaN single crystal epitaxial layer, by thermal conductivity bonding medium layer, expanded using high temperature
Scattered bonding method is attached.In temperature >=900 DEG C, the condition of 100 Kgf/square inch of pressure to 4 tons/square inch
Under, by the abundant diffusion of thermal conductivity bonding medium layer, the front of GaN epitaxy film and thermal conductivity substrate is bonded in one
It rises, as shown in Figure 2.
A kind of low-stress state compound substrate for GaN growth of the present invention, including saving stress compensation layer structure
Smaller stress state compound substrate, for example, tradeoff performance and cost and save stress compensation layer structure, only use High temperature diffusion
Bonding techniques realize for stablizing at a high temperature of GaN growth and compared with low residual stress compound substrate (as shown in Figure 3), also when belonging to
The range that this patent includes.
Compound substrate of the present invention, both having had can be used for GaN homoepitaxy and prepares the excellent of light emitting diode (LED) chip with vertical structure
Gesture, and the characteristics of High temperature diffusion is bonded with the high-temperature stable of stress compensation technology, low-stress state is combined, therefore have many
Unique advantage:
(1) compound substrate of the present invention, with one layer of GaN, it can be achieved that the homoepitaxy of GaN, improves epitaxial growth matter
Amount, and its thermal conductivity is preferable, can be directly used for preparing vertical structure LED device.To efficiently solve sapphire
Base GaN substrate thermal conductivity is poor, can not prepare vertical structure LED, and stock utilization is low, and hetero-epitaxy is second-rate,
And the complex process of epitaxial growth in Si substrate and SiC substrate, it is with high costs the problems such as.
(2) realize that GaN epitaxy film is connect with thermal conductivity substrate using High temperature diffusion bonding techniques, in its heating and cooling process
Middle bonding medium layer and diffusion and the phase transformation of shifting substrate etc. are completed entirely, under the hot conditions of subsequent epitaxial, bonding medium
Layer and transfer substrate will not generate variation (e.g., phase transformation, chemical reaction, physical diffusion, peeling etc.) again, i.e., diffusion interlinked technology obtains
The compound substrate obtained has very excellent high-temperature stability, so as to significantly improve the quality of GaN homoepitaxy.
(3) High temperature diffusion bonding techniques are used, the range of choice of alternative bonding medium layer material is had greatly expanded,
The refractory metal or high-temperature alloy material that some chemical activities are smaller, adhesiveness is poor can be used as dielectric layer, very small
Bonding pressure can obtain high-intensitive stable connection, therefore, be readily applicable to realize transfer of the GaN to the brittleness substrate such as Si.
(4) required pressure is very small when High temperature diffusion is bonded, therefore the longitudinal stress applied is substantially reduced, and passes through tune
Temperature-fall period after control key closes can play the role of stress relieving by annealing, so the residual stress in substrate can be effectively reduced.
(5) introducing of stress compensation layer can then offset the major part in the GaN epitaxy film being transferred on thermal conductivity substrate
Stress makes compound substrate be in lower stress state, inhibits the formation of substrate warpage and epitaxial film wrinkle, crackle, obtains high
The GaN compound substrate of performance, it is very useful to the improvement of subsequent epitaxial quality.
(6) High temperature diffusion bonding and stress compensation technology are combined, high-temperature stable is finally obtained and is in low-stress state
GaN compound substrate can be good at the homoepitaxy and chip preparing process that adapt to subsequent GaN at high temperature.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of low-stress state compound substrate for GaN growth.
Fig. 2 is a kind of preparation method schematic diagram of the low-stress state compound substrate for GaN growth of the present invention.
Fig. 3 be it is a kind of without stress compensation layer for GaN growth and the structure of the lesser compound substrate of residual stress is shown
It is intended to.
Fig. 4, which is embodiment 1., to be made thermal conductivity substrate using CuMo, is mended using Ni and conduction Ag paste as stress
It repays layer and bonding medium layer obtains the preparation flow figure of the low-stress state compound substrate for GaN growth.Wherein, (a) be
The schematic diagram of deposition stress compensation layer on CuMo thermal conductivity substrate；It (b) is made using spin coating proceeding preparation conduction Ag paste
For the schematic diagram of bonding medium layer；It (c) is to be bonded showing for GaN epitaxial layer and thermal conductivity substrate using High temperature diffusion bonding method
It is intended to；It (d) is the schematic diagram that Sapphire Substrate is removed using laser lift-off technique；It (e) is that being made with CuMo of finally obtaining is thermally conductive
Conductive substrates are illustrated using Ni and conduction Ag paste respectively as the composite substrate structure of stress compensation layer and bonding medium layer
Figure.
Fig. 5, which is embodiment 2., makees thermal conductivity substrate using Si, using Au/Pd and Ti/Pd as stress compensation layer and
Bonding medium layer obtains the preparation flow figure of the low-stress state compound substrate for GaN growth.Wherein, (a) uses UV anaerobism
GaN epitaxial layer is transferred to the schematic diagram of sapphire temporary substrates by glue；It (b) is to make to deposit Au/Pd on thermal conductivity substrate in Si
The schematic diagram of double-layer structure stress compensation layer；It (c) is that magnetron sputtering is used to prepare Ti/Pd as the schematic diagram of bonding medium layer；
It (d) is after being bonded GaN epitaxial layer and thermal conductivity substrate using High temperature diffusion bonding method, to peel sapphire signal off
Figure；(e) be finally obtain thermal conductivity substrate is made using Si substrate, using Au/Pd and Ti/Pd as stress compensation layer and
The composite substrate structure schematic diagram of bonding medium layer.
Fig. 6 is that embodiment 3. with AlSi makees thermal conductivity substrate, using SiNxWith Au respectively as stress compensation layer and key
It closes dielectric layer and obtains the preparation flow figure of the low-stress state compound substrate for GaN growth.
Fig. 7, which is embodiment 4., makees thermal conductivity substrate using CuW, using GaN and Pd as stress compensation layer and bonding
Dielectric layer, the preparation flow figure that low-stress state compound substrate for GaN growth is obtained using ZnO as sacrificial release layers.
Fig. 8 is the preparation section that example 5. saves stress compensation layer, makees thermal conductivity substrate with W, high temperature alloy slurry is made
The preparation flow figure of the smaller compound substrate of high-temperature stable and residual stress for GaN growth is obtained for diffusion interlinked dielectric layer.
Wherein, (a) is that spin coating proceeding is used to prepare high temperature alloy slurry as the schematic diagram of bonding medium layer；It (b) is expanded using high temperature
Dissipate the schematic diagram of bonding method bonding GaN epitaxial layer and thermal conductivity substrate；It (c) is to remove sapphire using laser lift-off technique
The schematic diagram of substrate；(d) be finally obtain without stress compensation layer W substrate high temperature alloy slurry bonding composite lining bear building-up
Structure schematic diagram.
Specific embodiment
Below with reference to attached drawing of the invention, a kind of low-stress state compound substrate for GaN growth is described in detail.First
It should be noted that those skilled in the art's basic thought according to the present invention, can make various modifications or improvements, without departing from
Basic thought of the invention, is all within the scope of the present invention.
Embodiment 1: it uses Ni as stress compensation layer, conduction Ag paste bonding CuMo metal substrate and GaN epitaxial layer, obtains
To the low-stress state compound substrate for GaN growth, it is specific the preparation method is as follows:
(1) epitaxial growth GaN single crystal layer on a sapphire substrate: in 2 inches 430 microns thick of plate Sapphire Substrate
On, GaN single crystal layer first thick using 4 microns of MOCVD technology epitaxial growth, then growth thickeies GaN layer thickness to 15 in HVPE
Micron.
(2) the Ni thin layer for the use of magnetron sputtering deposition thickness being 500 nanometers at the back side of CuMo metal substrate, as stress
Compensation layer, as shown in Fig. 4 (a).
(3) face GaN in above-mentioned process for sapphire-based GaN compound substrate and 300 microns thick of CuMo substrate face, revolve respectively
The conductive Ag paste for turning 10 microns of coating layer, as bonding medium layer, as shown in Fig. 4 (b), then in temperature 1100
DEG C, pressure is the High temperature diffusion bonding carried out under 1.5T 30 minutes, and realization GaN epitaxial layer is bonded with CuMo metal substrate, such as
Shown in Fig. 4 (c).
(4) laser lift-off technique is used, Sapphire Substrate is removed, hydrochloric acid, third are carried out to metal composite substrate obtained
The surface cleans technique such as ketone then obtains conductive Ag paste bonding, device architecture is the compound of GaN/Ag Paste/CuMo/Ni
Substrate, as shown in Fig. 4 (d) and 4 (e).
(5) compound substrate includes one layer 300 microns thick of CuMo substrate, and wherein the mass percent of Mo and Cu is respectively
20% to 80%, pass through the adjustable conduction Ag paste bonding medium layer of a thickness and 15 microns thick of GaN single crystal epitaxial layer key
It is combined, and Ni is used to offset most of residual stress in substrate, finally obtained composite lining as stress compensation layer
Bottom has good high-temperature stability and low-stress state, is suitable for GaN isoepitaxial growth.
Embodiment 2: Au/Pd is used to obtain as the GaN epitaxial layer of stress compensation layer, Ti/Pd bonding Si substrate and gluing transfer
To the outward-facing low-stress state compound substrate for GaN growth of gallium polarity, it is specific the preparation method is as follows:
(1) the process for sapphire-based GaN compound substrate of preparation gluing transfer: in 2 inches 430 microns thick of plate Sapphire Substrate
On, GaN single crystal layer first thick using 4 microns of MOCVD technology epitaxial growth, then growth thickeies GaN layer thickness extremely in HVPE
15 microns, then the GaN epitaxy film is adhered on 2 inches 430 microns thick sapphire temporary substrates using UV anaerobic adhesive, new
Sapphire Substrate is later removed former extension Sapphire Substrate to get arriving using laser lift-off technique as transfer support substrate
The GaN single crystal layer being bonded in new Sapphire Substrate, as shown in Fig. 5 a).
(2) at the back side of Si substrate, 3 microns of Au layer and 10 microns of Pd layer are prepared using magnetron sputtering, as stress
Compensation layer.
(3) face GaN of the GaN single crystal in bonding on a sapphire substrate and 300 microns thick of Si substrate face, make respectively
50 nanometers of Ti layer and 500 nanometers of Pd layer are prepared with magnetron sputtering, as thermal conductivity bonding medium layer, then in temperature
1000 DEG C, pressure is the High temperature diffusion bonding carried out under 2.5T 20 minutes, and realization GaN epitaxial layer is bonded with Si substrate.
(4) in bonding process, UV anaerobic adhesive is carbonized at high temperature, and Sapphire Substrate takes off automatically from GaN epitaxy film surface
It falls, the surface cleans techniques such as hydrochloric acid, acetone is carried out to compound substrate obtained, then obtain Ti/Pd bonding, device architecture is
The compound substrate of GaN/Ti/Pd/Pd/Ti/Si/Au/Pd, as shown in Figure 5.
(5) compound substrate includes one layer 300 microns thick of Si substrate, passes through the adjustable Ti/Pd bonding medium of a thickness
Layer is bonded together with 15 microns thick of GaN single crystal epitaxial layer, and uses Au/Pd as big in stress compensation layer counteracting substrate
Portion of residual stress, obtained compound substrate have good high-temperature stability and low-stress state, are suitable for outside GaN homogeneity
Prolong growth.Further, since GaN epitaxial layer have passed through gluing and Ti/Pd metal medium is overturn twice, finally obtained is gallium polarity
Outward-facing GaN compound substrate is more conducive to improving GaN epitaxy quality.
Embodiment 3: SiN is usedxIt is used for as stress compensation layer, AuAu bonding AlSi metal substrate and GaN epitaxial layer
The low-stress state compound substrate of GaN growth, specific process step are following (as shown in Figure 6):
(1) epitaxial growth GaN single crystal layer on a sapphire substrate: in 2 inches 430 microns thick of plate Sapphire Substrate
On, GaN single crystal layer first thick using 4 microns of MOCVD technology epitaxial growth, then growth thickeies GaN layer thickness to 15 in HVPE
Micron.
(2) it is prepared at the back side of AlSi metal substrate using plasma enhanced chemical vapor deposition with a thickness of 5 microns
SiNxThin layer, as stress compensation layer.
(3) in the face GaN of above-mentioned process for sapphire-based GaN compound substrate, the Au for preparing 1 micron thick using magnetron sputtering is conductive
Bonding medium layer, then at 950 DEG C of temperature, pressure is the High temperature diffusion bonding carried out under 2T 20 minutes, realizes GaN epitaxial layer
With being bonded for AlSi metal substrate.
(4) laser lift-off technique is used, Sapphire Substrate is removed, hydrochloric acid, third are carried out to metal composite substrate obtained
The surface cleans technique such as ketone then obtains AuAu bonding, device architecture GaN/Au/AlSi/SiNxCompound substrate.
(5) compound substrate includes one layer 150 microns thick of AlSi substrate, and wherein the group of Al is divided into the component of 30%, Si
It is 70%, is bonded together by the adjustable Au bonding medium layer of a thickness with 15 microns thick of GaN single crystal epitaxial layer, and use
SiNxMost of residual stress in substrate is offset as stress compensation layer, finally obtained compound substrate has good height
Temperature stability and low-stress state are suitable for GaN isoepitaxial growth.
Embodiment 4: it uses GaN as stress compensation layer, Pd bonding CuW substrate and GaN epitaxial layer, obtains for GaN growth
Low-stress state compound substrate, specific preparation method is following (as shown in Figure 7):
(1) process for sapphire-based GaN compound substrate of the ZnO as sacrificial release layers is prepared: in 2 inches of 430 microns of thick plates
In Sapphire Substrate, ZnO sacrificial release layers first are deposited using magnetron sputtering technique, then 4 microns of epitaxial growth thick in MOCVD
GaN single crystal layer, then growth thickeies GaN layer thickness to 15 microns in HVPE.
(2) at the back side of 200 microns of thickness CuW substrates, using 15 microns of HVPE technology extension of more days layers of GaN, as answering
Force compensating layer.
(3) in the front of CuW substrate, 1000 nanometers of Pd layer is prepared using magnetron sputtering, is bonded and is situated between as thermal conductivity
Matter layer, then at 1200 DEG C of temperature, pressure is the High temperature diffusion bonding carried out under 3.5T 20 minutes, realize GaN epitaxial layer with
The bonding of CuW substrate.
(4) chemical stripping technology is used, i.e., corrodes ZnO sacrificial release layers using chemical reagent, to remove sapphire lining
Bottom carries out the surface cleans techniques such as hydrochloric acid, acetone to compound substrate obtained, obtains PdPd bonding, device architecture GaN/
The compound substrate of Pd/CuW/GaN.
(5) compound substrate includes one layer 200 microns thick of CuW substrate, and wherein the mass percent of W and Cu is respectively
20% to 80%, it is bonded together by the adjustable Pd bonding medium layer of a thickness with 15 microns thick of GaN single crystal epitaxial layer, and
GaN is used to offset most of residual stress in substrate as stress compensation layer, finally obtained compound substrate has good
High-temperature stability and low-stress state, be suitable for GaN isoepitaxial growth.
Embodiment 5: weigh performance and cost and save stress compensation layer structure, only use high temperature alloy slurry
(NiCrSiB) it is bonded W metal substrate and GaN epitaxial layer, obtains unstressed compensation layer and the lesser compound substrate of residual stress:
(1) epitaxial growth GaN single crystal layer in Sapphire Substrate: in 2 inches 430 microns thick of plate Sapphire Substrate,
First using the thick GaN single crystal layer of 4 microns of MOCVD technology epitaxial growth, then growth thickeies GaN layer thickness to 15 micro- in HVPE
Rice.
(2) face GaN in above-mentioned process for sapphire-based GaN compound substrate and 150 microns thick of W substrate surface, rotate respectively
It is coated with the NiCrSiB high temperature alloy slurry that a layer thickness is 5 microns, as conductive bond dielectric layer, as shown in Fig. 8 (a), then
At 1200 DEG C of temperature, pressure is the High temperature diffusion bonding carried out under 2T 20 minutes, realizes the key of GaN epitaxial layer and W metal substrate
It closes, as shown in Fig. 8 (b).
(3) Sapphire Substrate is removed using laser lift-off technique, the tables such as hydrochloric acid, acetone is carried out to compound substrate obtained
Face cleaning process then obtains the bonding of NiCrSiB high temperature alloy slurry, device architecture is answering for GaN/NiCrSiB/NiCrSiB/W
Substrate is closed, as shown in Fig. 8 (c).
(4) compound substrate includes one layer 150 microns thick of W substrate, and wherein degree >=99.95% of W, passes through
The adjustable NiCrSiB high temperature alloy pulp layer of one thickness is bonded together with 15 microns thick of GaN single crystal epitaxial layer, finally obtains
Compound substrate it is stable at high temperature and residual stress is smaller, can be used for GaN isoepitaxial growth, as shown in Fig. 8 (d).
Claims (6)
1. a kind of low-stress state compound substrate for GaN growth, which is characterized in that including thermal conductivity substrate, be located at and be somebody's turn to do
Thermal conductivity bonding medium layer, GaN single crystal epitaxial layer on substrate and the stress compensation in the preparation of thermal conductivity substrate back
Layer；The stress compensation layer material melting point is higher than 1000 DEG C and has thermal conductivity, is the nitride materials such as GaN, SiNx,
Either one of molybdenum (Mo), titanium (Ti), palladium (Pd), golden (Au), copper (Cu), tungsten (W), nickel (Ni), chromium (Cr) elemental metals
Or several alloy.
2. a kind of low-stress state compound substrate for GaN growth according to claim 1, which is characterized in that described
Thermal conductivity bonding medium layer material fusing point is higher than 1000 DEG C and has thermal conductivity, is molybdenum (Mo), titanium (Ti), palladium
(Pd), one of golden (Au), copper (Cu), tungsten (W), nickel (Ni), chromium (Cr) elemental metals or several alloy or resin
Matrix and conducting particles silver-colored (Ag), golden (Au), copper (Cu), aluminium (Al), zinc (Zn), iron (Fe), nickel (Ni), one in graphite (C)
Kind or a variety of compositions conducting polymer or one of the above or a variety of conducting particles particle and adhesive, solvent, help
Electrocondution slurry silicate-base high-temperature electric conduction glue (HSQ) or nickel (Ni) composed by agent, chromium (Cr), silicon (Si),
The high temperature alloy slurry that the metals such as boron (B) are formed.
3. a kind of low-stress state compound substrate for GaN growth according to claim 1, which is characterized in that described
Thermal conductivity substrate material fusing point is higher than 1000 DEG C and has thermal conductivity, is molybdenum (Mo), titanium (Ti), palladium (Pd), copper
(Cu), one of tungsten (W), nickel (Ni), chromium (Cr) elemental metals or several alloys or silicon (Si) crystal, silicon carbide
(SiC) crystal or AlSi crystal.
4. a kind of low-stress state compound substrate for GaN growth according to claim 1, which is characterized in that described
GaN epitaxial layer with a thickness of 1 micron to 100 microns；The stress compensation layer with a thickness of 0.1 micron to 300 microns；It is described to lead
Thermal conducting bonding medium layer with a thickness of 10 nanometers to 100 microns；Thermal conductivity transfer substrate with a thickness of 10 microns extremely
3000 microns.
5. a kind of low-stress state compound substrate for GaN growth according to claim 1, which is characterized in that described
Thermal conductivity substrate and GaN single crystal layer are to be bonded in one using High temperature diffusion bonding techniques by thermal conductivity bonding medium layer
It rises.
6. a kind of low-stress state compound substrate for GaN growth according to claim 1, which is characterized in that wherein
Smaller stress state compound substrate including saving stress compensation layer structure.
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| CN106531862B (en) * | 2016-12-20 | 2019-03-29 | 东莞市中镓半导体科技有限公司 | A kind of preparation method of GaN base compound substrate |
| CN112186079A (en) * | 2020-09-28 | 2021-01-05 | 厦门士兰明镓化合物半导体有限公司 | Preparation method of LED chip with vertical structure |
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