CN116207044B - Laser stripping method, equipment and medium for gallium nitride material - Google Patents
Laser stripping method, equipment and medium for gallium nitride material Download PDFInfo
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- CN116207044B CN116207044B CN202310445602.7A CN202310445602A CN116207044B CN 116207044 B CN116207044 B CN 116207044B CN 202310445602 A CN202310445602 A CN 202310445602A CN 116207044 B CN116207044 B CN 116207044B
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 359
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 238
- 239000000463 material Substances 0.000 title claims abstract description 191
- 238000000034 method Methods 0.000 title claims abstract description 74
- 229910052751 metal Inorganic materials 0.000 claims abstract description 128
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- 239000010410 layer Substances 0.000 claims description 138
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- 238000004528 spin coating Methods 0.000 claims description 22
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
The invention belongs to the field of semiconductors, and particularly relates to a laser stripping method, equipment and medium for gallium nitride materials. The method comprises the following steps: depositing a metal layer on the surface of the deposited gallium nitride heterostructure material to form a gallium nitride complex; and in response to the completion of the metal layer deposition, stripping the substrate on the gallium nitride composite body by laser, and washing the metal layer on the gallium nitride composite body by a preset mode to obtain the gallium nitride material. According to the laser stripping method of the gallium nitride material, provided by the invention, after a layer of metal layer is added on the Fe-doped gallium nitride material, laser stripping is carried out on the substrate on the gallium nitride material, and the high ductility of the metal layer can effectively absorb GaN to be thermally decomposed to generate N in the laser stripping process 2 The generated pressure and the larger stress generated by the internal stress relaxation of the Fe doped GaN material. Greatly improves the forming yield of the gallium nitride material and the quality of the gallium nitride material.
Description
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a laser stripping method, equipment and medium for gallium nitride materials.
Background
The GaN material has the excellent characteristics of large forbidden bandwidth, high electron saturation rate, high critical breakdown electric field, strong radiation resistance and the like, so that the GaN-material-based high electron mobility transistor, in particular to an AlGaN/GaN HEMT, is widely applied to the manufacture of a new generation of high-power and high-frequency solid-state microwave power devices, and has important significance for the development of the fields of satellite communication, 5G and the like. Theoretically, a GaN HEMT device has excellent power output capability, but the output power density of the conventional GaN-based microwave power device reported at present can only reach 3-5W/mm. The research shows that the actual output capacity of the GaN-based microwave power device is mainly limited by the self-heating effect, the heat conduction performance of the substrate material is critical to the heat dissipation of the device, so that the GaN-based microwave power device is prepared on or transferred to the high-heat-conduction substrate to weaken the self-heating effect to the maximum extent and avoid the heat accumulation of an active area, and the GaN-based microwave power device is an important research direction for the development of the GaN-based microwave power device at the present stage.
The sapphire substrate has low cost, the technology of growing GaN structural materials on the sapphire is mature, and the GaN materials and devices are obtained from the sapphire by adopting the laser stripping technology, so that the GaN structural materials and devices are the main technical means for transferring the GaN devices onto the high-heat-conductivity substrate. In a GaN device, a high-resistance GaN buffer layer is critical to inhibiting the leakage of the device, and the room-temperature resistivity of the GaN high-resistance layer needs to reach 10 6 The Fe acceptor impurity compensation is an important method for realizing high-resistance GaN at present until the impurity concentration is higher than omega cm, and the resistivity of the prepared high-resistance layer can reach 10 9 Omega/sq. The Fe-doped AlGaN/GaN HEMT material is stripped by laser, microcracks appear on the surface of GaN after laser irradiation, the Fe-doped AlGaN/GaN HEMT material film is damaged, the GaN quality and the material performance are reduced, and the reduction of the laser damage threshold energy density of GaN is mainly caused by Fe doping. On the one hand, the introduction of Fe impurity levels adds an extra laser absorption center compared to the intrinsic absorption of GaN into the laser, resulting in a locally instantaneous large temperature gradient. Therefore, when the laser peels off the Fe-doped GaN film, the generated thermal stress may be larger than that of the unintentionally doped GaN film. On the other hand, in the Fe doped GaN material, because Fe atoms replace Ga atoms, the residual compressive stress of the grown Fe doped GaN layer is larger, and the four times of that of an undoped GaN sample can be achieved. Therefore, in the laser lift-off process, the residual stress in the GaN film is relaxed, and particularly, the higher residual stress in the Fe-doped GaN film is suddenly released, so that the possibility of microcrack generation in the laser lift-off process is greatly increased.
Aiming at the phenomenon that microcracks appear after laser stripping of Fe-doped GaN HEMT materials, an effective method is needed to relieve the phenomenon that microcracks appear due to larger stress release in the laser stripping process of an Fe-doped GaN HEMT material system, improve the performance of the Fe-doped GaN HEMT materials after laser stripping, and realize the transfer of high-quality Fee-doped GaN HEMT materials and devices to a substrate with high thermal conductivity.
Disclosure of Invention
In order to solve the above problems, the present invention provides a laser lift-off method of gallium nitride material, comprising:
depositing a metal layer on the surface of the deposited gallium nitride heterostructure material to form a gallium nitride complex;
and in response to the completion of the metal layer deposition, stripping the substrate on the gallium nitride composite body by laser, and washing the metal layer on the gallium nitride composite body by a preset mode to obtain the gallium nitride material.
In some embodiments of the invention, the method further comprises:
and migrating the gallium nitride material to a target substrate in a preset mode to form a target device.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
preparing an electrode of a target gallium nitride device on the surface of the gallium nitride heterostructure material formed by deposition, and further depositing a protective layer on the surface of the gallium nitride device forming the electrode;
and in response to the completion of the deposition of the protective layer, depositing a metal layer on the protective layer to form a gallium nitride composite.
In some embodiments of the invention, the method further comprises:
and responding to the metal layer on the gallium nitride compound body to be washed by a preset mode, and selecting a corresponding dissolving agent according to the used material of the protective layer to dissolve the protective layer to obtain the gallium nitride material.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
and depositing and growing one or more metal layers with preset thickness of preset materials on the surface of the gallium nitride heterostructure material through a magnetron sputtering device.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
spin-coating an adhesive material on the surface of the temporary slide, controlling the spin-coating rotation speed in spin-coating to a predetermined range and maintaining the spin-coating rotation speed for a first predetermined time.
In some embodiments of the invention, the method further comprises:
in response to the spin coating of the adhesive material being completed, the temporary slide spin coated with the adhesive material is baked in stages.
In some embodiments of the invention, the staged baking of the temporary carrier sheet spin coated with adhesive material comprises:
baking at a first predetermined temperature and for a second predetermined time in a first stage;
in response to the first stage bake being completed, the bake is performed at a second predetermined temperature and for a third predetermined time.
In some embodiments of the invention, the method further comprises:
the temporary carrier sheet is bonded to the gallium nitride composite by the bonding material in response to completion of the staged baking of the temporary carrier sheet and bonding material.
In some embodiments of the invention, bonding the temporary carrier with the gallium nitride composite by the bonding material comprises:
and (3) attaching one surface of the temporary slide glass, which is coated with an adhesive material, to the metal layer of the gallium nitride composite body, applying a preset pressure in a direction penetrating through the temporary slide glass and the gallium nitride composite body, and controlling the bonding temperature to be a third preset temperature to naturally cool to form the gallium nitride composite body containing the temporary slide glass.
In some embodiments of the invention, in response to the metal layer deposition being completed, the stripping of the substrate on the gallium nitride composite by the laser comprises:
irradiating a laser of a predetermined wavelength, a predetermined pulse width, a predetermined frequency and a predetermined power at the substrate according to a predetermined trend to detach the substrate on the gallium nitride composite body.
In some embodiments of the invention, the method further comprises:
and bonding the gallium nitride compound separated from the substrate with the target substrate, and placing the gallium nitride compound containing the target substrate into a preset photoresist removing solution to soak for a fourth preset time so as to remove the temporary slide on the surface of the gallium nitride compound.
In some embodiments of the invention, washing the metal layer on the gallium nitride composite in a predetermined manner to obtain a gallium nitride material comprises:
and placing the metal layer of the gallium nitride composite body containing the target substrate and removing the temporary slide according to the metal used by the metal layer into a solution capable of dissolving the metal, and soaking to remove the metal layer to obtain the gallium nitride material.
Yet another aspect of the present invention is directed to a computer device comprising:
at least one processor; and
a memory storing computer instructions executable on the processor, which when executed by the processor, perform the steps of the method of any of the above embodiments.
Yet another aspect of the invention also proposes a computer-readable storage medium storing a computer program which, when executed by a processor, implements the steps of the method of any of the above embodiments.
According to the laser stripping method of the gallium nitride material, provided by the invention, after a layer of metal layer is added on the Fe-doped gallium nitride material, laser stripping is carried out on the substrate on the gallium nitride material, and the high ductility of the metal layer can effectively absorb GaN to be thermally decomposed to generate N in the laser stripping process 2 The generated pressure and the larger stress generated by the internal stress relaxation of the Fe doped GaN material. Greatly improves the forming yield of the gallium nitride material and the quality of the gallium nitride material.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a laser lift-off method of a gallium nitride material according to an embodiment of the present invention;
fig. 2 is an enlarged schematic diagram of a scanning path of a laser beam on a sapphire substrate in a laser lift-off method of a gallium nitride material according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a computer device according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a computer readable storage medium according to an embodiment of the present invention;
fig. 5 is a schematic diagram of an embodiment of a method for laser lift-off of a Fe-doped gallium nitride HEMT structure material according to an embodiment of the present invention;
fig. 6 is a schematic diagram showing stress distribution and crack generation of a gallium nitride material in the laser lift-off process according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
It should be noted that, in the embodiments of the present invention, all the expressions "first" and "second" are used to distinguish two entities with the same name but different entities or different parameters, and it is noted that the "first" and "second" are only used for convenience of expression, and should not be construed as limiting the embodiments of the present invention, and the following embodiments are not described one by one.
The invention aims to solve the problem that micro cracks appear after laser stripping of Fe doped GaN HEMT (high electron mobility transistor) materials, and as mentioned above, in Fe doped GaN materials, the residual compressive stress of a grown Fe doped GaN layer is larger due to the substitution of Ga atoms by Fe atoms, thus being four times of that of undoped GaN samples. Therefore, in the laser lift-off process, the residual stress in the GaN film is relaxed, and particularly, the higher residual stress in the Fe-doped GaN film is suddenly released, so that the possibility of microcrack generation in the laser lift-off process is greatly increased, the yield of the yield is greatly reduced, and the cost is increased.
As shown in fig. 1, in order to solve the above-mentioned problems, the present invention provides a laser lift-off method of gallium nitride material, comprising:
s1, depositing a metal layer on the surface of a deposited gallium nitride heterostructure material to form a gallium nitride complex;
and step S2, in response to the completion of the deposition of the metal layer, stripping the substrate on the gallium nitride composite body by laser, and washing the metal layer on the gallium nitride composite body in a preset mode to obtain the gallium nitride material.
In this embodiment, the gallium nitride heterostructure material formed by deposition includes a GaN HEMT (high electron mobility transistor) material of a substrate, a metal organic chemical vapor deposition method is required to be used in manufacturing the gallium nitride material, and in a corresponding metal organic chemical vapor deposition apparatus, a GaN nucleation layer, a Fe doped GaN high-resistance layer, a GaN high-transition layer, an AlN insertion layer, an AlGaN barrier layer, and a GaN cap layer are sequentially deposited on the substrate by using the substrate as a base material, wherein the substrate is typically a sapphire substrate.
In some embodiments of the present invention, the gallium nitride material in the gallium nitride heterostructure material is not limited to the AlGaN/AlN/GaN heterostructure, but may be InGaN/GaN, inAlN/GaN, inAlGaN/GaN, or scann/GaN heterostructures, or a heterojunction composed of a AlGaN, inGaN, inAlN, inAlGaN, scAlN barrier layer with graded composition, where the GaN high-mobility layer is not limited to the GaN material, but may be an AlN, inN or the like material.
In a conventional implementation, the gallium nitride material is obtained by stripping the substrate, typically directly on the gallium nitride heterostructure material, by a laser lift-off technique.
In the present invention, however, in step S1, a metal layer is deposited on the surface of the gallium nitride heterostructure material, i.e., the surface away from the substrate, to form a gallium nitride composite. The metal layer may be made of a metal having high ductility such as Ni and/or Au.
In step S2, the gallium nitride composite body containing the metal layer is irradiated with laser light from the direction of the substrate to detach the substrate, and then the metal layer on the gallium nitride composite surface is washed away by a strong acid solvent after the detachment of the substrate, thereby obtaining the corresponding gallium nitride material.
Referring to fig. 5 and 6, fig. 5 is a schematic diagram of a process of laser lift-off of a sapphire substrate provided by the present invention, and fig. 6 is a schematic diagram of stress distribution and crack generation of a gallium nitride composite material or gallium nitride during laser lift-off. When laser irradiates the gallium nitride nucleation layer, namely the gallium nitride material, through the sapphire substrate, the gallium nitride compound on the sapphire substrate receives a compressive stress effect, and especially when the laser irradiates the Fe-doped GaN high-resistance layer, the thermal stress generated by the laser is larger than that of the unintentionally-doped GaN film. On the other hand, in the Fe-doped GaN material, since Fe atoms replace Ga atoms, the residual compressive stress of the grown Fe-doped GaN high-resistance layer is larger, and four times as much as that of the undoped GaN sample can be achieved, as the compressive stress relaxation phenomenon shown in fig. 6 is more remarkable. Therefore, the invention provides a metal material with better ductility grown on the upper surface of the GaN HEMT structural material, which can effectively absorb the pressure generated by N2 generated by GaN thermal decomposition and the larger stress generated by internal stress relaxation of the Fe doped GaN material in the laser stripping process, plays a good role in absorbing stress on the upper part (the part of one surface far away from the substrate), also provides a certain support for GaN, and avoids the damage problem of Fe doped GaN laser stripping.
Further, after the substrate is peeled off, a metal layer deposited on the gallium nitride composite material can be dissolved by using a strong acid, and the selection of the strong acid is determined according to the characteristics of the metal deposited on the metal layer and the corrosion resistance of each layer of the gallium nitride material.
In some embodiments of the invention, the method further comprises:
and migrating the gallium nitride material to a target substrate in a preset mode to form a target device.
In this embodiment, further, after the metal layer and substrate on the gallium nitride composite are removed, the remaining gallium nitride material may be transferred to a high thermal conductivity substrate to form the final gallium nitride product.
In some embodiments of the invention, the transfer to the target substrate may be prior to washing the metal layer of the gallium nitride complex with a strong acid. In this case the strong acid is selected taking into account the corrosion resistance of the target substrate.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
preparing an electrode of a target gallium nitride device on the surface of the gallium nitride heterostructure material formed by deposition, and further depositing a protective layer on the surface of the gallium nitride device forming the electrode;
and in response to the completion of the deposition of the protective layer, depositing a metal layer on the protective layer to form a gallium nitride composite.
In this embodiment, before depositing a metal layer onto the gallium nitride heterostructure material, i.e., before forming the gallium nitride composite, an electrode of the target gallium nitride device may be fabricated on the gallium nitride heterostructure material, then a protective layer capable of preventing corrosion of strong acid is deposited on the electrode, and then the metal layer is deposited to form the gallium nitride composite. In some embodiments of the invention, the method further comprises:
and responding to the metal layer on the gallium nitride compound body to be washed by a preset mode, and selecting a corresponding dissolving agent according to the used material of the protective layer to dissolve the protective layer to obtain the gallium nitride material.
Further, in this embodiment, when the gallium nitride composite is formed, the substrate on the gallium nitride composite may be stripped by using a laser, and after the substrate is stripped, the substrate may be further bonded to the target substrate, then the metal layer is washed away by using a strong acid solvent, and then the protective layer is washed away by using a solvent, and in a typical example, the protective layer may be SiO2, and the corresponding target gallium nitride device (gallium nitride device including an electrode) may be directly obtained by washing away the protective layer by using a hydrofluoric acid solution.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
and depositing and growing one or more metal layers with preset thickness of preset materials on the surface of the gallium nitride heterostructure material through a magnetron sputtering device.
In this embodiment, depositing the metal on the surface of the gallium nitride heterostructure material may be achieved by depositing the metal on the surface of the gallium nitride heterostructure material by a magnetron sputtering apparatus, for example, in some embodiments of the invention, the gallium nitride heterostructure material is put into the magnetron sputtering apparatus to grow a Ni/Au metal layer, where the Ni metal thickness is 3-10 nm and the Au thickness is 50-200 nm.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
spin-coating an adhesive material on the surface of the temporary slide, controlling the spin-coating rotation speed in spin-coating to a predetermined range and maintaining the spin-coating rotation speed for a first predetermined time.
In this example, spin coating is used to spin coat the adhesive material on the temporary slide while controlling the rotational speed to 1200-3000 rpm and the time to 30-60 seconds.
In some embodiments of the invention, the method further comprises:
in response to the spin coating of the adhesive material being completed, the temporary slide spin coated with the adhesive material is baked in stages.
In some embodiments of the invention, the method of baking a gallium nitride heterostructure material comprising the bonding material and a metal layer in stages comprises:
baking at a first predetermined temperature and for a second predetermined time in a first stage;
in response to the first stage bake being completed, the bake is performed at a second predetermined temperature and for a third predetermined time.
In this embodiment, the slide coated with the adhesive material is baked in stages to remove most of the gases and volatile solvents in the glue, the first stage: controlling the temperature of a hot plate to 120 ℃ and baking for 3 minutes; the first stage: the hot plate temperature was controlled to 180℃and baked for 4 minutes.
In some embodiments of the invention, the method further comprises:
the temporary carrier sheet is bonded to the gallium nitride composite by the bonding material in response to completion of the staged baking of the temporary carrier sheet and bonding material.
In this embodiment, after the staged baking of the temporary carrier sheet spin coated with the bonding material is completed, the temporary material is bonded to the gallium nitride composite by the bonding material. The gallium nitride composite can be controlled by a temporary slide when the substrate on the gallium nitride composite is peeled by a laser.
In some embodiments of the invention, bonding the temporary carrier with the gallium nitride composite by the bonding material comprises:
and (3) attaching one surface of the temporary slide glass, which is coated with an adhesive material, to the metal layer of the gallium nitride composite body, applying a preset pressure in a direction penetrating through the temporary slide glass and the gallium nitride composite body, and controlling the bonding temperature to be a third preset temperature to naturally cool to form the gallium nitride composite body containing the temporary slide glass.
Further, in this example, the surface of the gallium nitride composite body containing the metal layer is bonded to the surface of the temporary carrier sheet on which the adhesive material is spin-coated, and the bonding temperature is controlled to be 200 to 350 ℃, the bonding pressure is controlled to be 1000 to 2000N, and the temporary bonding process is completed by cooling the gallium nitride composite body to room temperature. The pose of the gallium nitride composite can be controlled by a temporary slide when the substrate is subsequently subjected to laser lift-off.
In some embodiments of the invention, in response to the metal layer deposition being completed, the stripping of the substrate on the gallium nitride composite by the laser comprises:
irradiating a laser of a predetermined wavelength, a predetermined pulse width, a predetermined frequency and a predetermined power at the substrate according to a predetermined trend to detach the substrate on the gallium nitride composite body.
In this embodiment, as shown in fig. 2. The preset trend is a moving mode of irradiating the substrate by laser, which is Z-shaped in the embodiment (the enlarged schematic diagram is shown in the figure, but the mode is similar to a progressive scanning mode in a macroscopic view, and the line-by-line reciprocating irradiation is realized), a gallium nitride compound containing a temporary slide is placed into a KrF excimer laser stripping system cavity by taking the temporary slide as a support, the bottom surface of the sapphire substrate is upward, excimer laser irradiates a GaN sample through the sapphire substrate, a laser scanning track is set, the laser power, the laser spot size and shape, the laser stepping and other technological parameters are adjusted, and then a laser scanning process is started by a software control system; the laser scanning track is Z-shaped; the wavelength of the laser is 193/248nm, the pulse width is 25s, the frequency is 50Hz, and the laser power is 0.49W; the laser power has a large influence on laser stripping, proper laser power is selected to be important to realize the stripping of high-quality GaN materials, and when the laser power is 0.45W, gaN separation is incomplete in a single light spot; when the laser power is 0.48W, interference fringes are generated at the edge of the light spot, and stripping is not realized here; when the laser power was 0.49W, the GaN film was completely separated; when the laser power was 0.52W, cracks were generated on the GaN surface.
In some embodiments of the invention, the method further comprises:
and bonding the gallium nitride compound separated from the substrate with the target substrate, and placing the gallium nitride compound containing the target substrate into a preset photoresist removing solution to soak for a fourth preset time so as to remove the temporary slide on the surface of the gallium nitride compound.
In this embodiment, the temporary carrier is used as a support to bond the gallium nitride composite separated from the substrate with the target substrate, and then the gallium nitride composite containing the target substrate is placed in the photoresist stripping solution and soaked for a period of time, so that the adhesive material between the temporary carrier and the metal layer of the gallium nitride composite is dissolved in the photoresist stripping solution, and further the gallium nitride composite containing the target substrate is separated from the temporary carrier.
In some embodiments of the invention, washing the metal layer on the gallium nitride composite in a predetermined manner to obtain a gallium nitride material comprises:
and placing the metal layer of the gallium nitride composite body containing the target substrate and removing the temporary slide according to the metal used by the metal layer into a solution capable of dissolving the metal, and soaking to remove the metal layer to obtain the gallium nitride material.
In this embodiment, according to the material of the metal layer on the gallium nitride composite, a strong acid solution capable of dissolving the metal layer is selected to remove the metal layer on the gallium nitride composite, for example, a wafer covered with the metal layer on the surface of the gallium nitride composite is soaked in aqua regia to remove the Ni/Au metal layer on the upper surface of the gallium nitride composite, thereby completing the transfer of the gallium nitride composite from the sapphire substrate to the target substrate.
Example 1:
step 1: adopting MOCVD (metal organic chemical vapor deposition) equipment to epitaxially grow AlGaN/AlN/GaN heterostructure materials on a two-inch sapphire substrate, namely forming a gallium nitride heterostructure material, wherein the gallium nitride heterostructure material comprises a sapphire substrate, a GaN nucleation layer, an Fe-doped GaN high-resistance layer, a GaN high-migration layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer from bottom to top in sequence;
step 2: placing the gallium nitride heterostructure material into magnetron sputtering equipment to grow a Ni/Au metal layer, wherein the thickness of the Ni metal is 3-10 nm, and the thickness of the Au is 50-200 nm, so as to form a gallium nitride complex;
step 3: coating an adhesive material on a first surface (a surface which is adhered to a metal layer of a gallium nitride complex) of the temporary slide by adopting a spin coating method, controlling the rotating speed to be 1200-3000 rpm, and controlling the time to be 30-60 seconds;
step 4: baking the temporary slide coated with the adhesive material in stages to remove most of gas and volatile solvents in the adhesive, wherein in the first stage: controlling the temperature of a hot plate to 120 ℃ and baking for 3 minutes; the first stage: controlling the temperature of a hot plate to 180 ℃ and baking for 4 minutes;
step 5: after baking, bonding the metal layer of the gallium nitride compound body with the first surface of the temporary slide, heating and pressurizing the bonding surface perpendicular to the bonding surface of the gallium nitride compound body and the temporary slide, controlling the bonding temperature to be 200-350 ℃, controlling the bonding pressure to be 1000-2000N, cooling the bonding surface to room temperature, and completing the temporary bonding process;
step 6: placing the temporarily bonded gallium nitride compound into a KrF excimer laser stripping system chamber, enabling the bottom surface of a sapphire substrate to face upwards, enabling excimer laser to irradiate the gallium nitride compound through the sapphire substrate, setting a laser scanning track, adjusting laser power, laser spot size and shape, laser stepping and other technological parameters, and then starting a laser scanning process through a software control system; the laser scanning track is Z-shaped; the wavelength of the laser is 193/248nm, the pulse width is 25s, the frequency is 50Hz, and the laser power is 0.49W; the laser power has a large influence on laser stripping, the selection of proper laser power is important to realize the stripping of high-quality GaN materials, and when the laser power is 0.45W, the gallium nitride complex is incompletely separated from the substrate in a single light spot; when the laser power is 0.48W, interference fringes are generated at the edge of the light spot, and stripping is not realized here; when the laser power was 0.49W, the GaN film was completely separated; when the laser power was 0.52W, cracks were generated on the GaN surface.
Step 7: after the pulse excimer laser covers the whole area of the GaN material according to a set track, the sapphire substrate on the gallium nitride complex is automatically separated, ga metal on the surface of the gallium nitride complex is cleaned, and the peeling of the gallium nitride complex on the sapphire is completed;
step 8: bonding the gallium nitride complex subjected to laser stripping with a target substrate to realize transfer of the gallium nitride complex to other high-heat-conductivity substrates;
step 9: placing the gallium nitride compound containing the target substrate in a special photoresist removing solution, soaking for a period of time to separate the temporary slide glass from the gallium nitride compound, and completely removing the adhesive material, wherein only an excessive metal layer (the target substrate belongs to a useful part needing to be reserved) is left on the gallium nitride compound;
step 10: and immersing the metal layer covered on the upper surface of the gallium nitride complex in aqua regia, removing the Ni/Au metal layer on the upper surface of the gallium nitride complex, and finally, only the product of the combination of the gallium nitride material and the target substrate is remained, thereby completing the transfer of the gallium nitride material from the sapphire substrate to the target substrate. The gallium nitride product can be generated after the electrode is manufactured later, so that the gallium nitride product can be used for commercial use.
It should be noted that, in the embodiment of the present application, the gallium nitride heterostructure material includes a gallium nitride material and a substrate; the gallium nitride compound body is a gallium nitride heterostructure material deposited with a metal layer, namely mainly comprises a gallium nitride material and the metal layer, and also comprises a substrate and a situation without the substrate; the gallium nitride material refers to a multi-layer gallium nitride material except a substrate and a metal layer in fig. 5, and has the excellent characteristics of large forbidden bandwidth, high electron saturation rate, high critical breakdown electric field, strong radiation resistance and the like. The target gallium nitride device refers to a final device formed by bonding gallium nitride material to a target substrate according to the purpose.
Example 2:
step 1: an MOCVD device is adopted to epitaxially grow AlGaN/AlN/GaN heterostructure materials on a two-inch sapphire substrate, and the AlGaN/AlN/GaN heterostructure materials comprise a sapphire substrate, a GaN nucleation layer, an Fe doped GaN high-resistance layer, a GaN high-migration layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer from bottom to top in sequence;
step 2: preparing a grid electrode, a source electrode and a drain electrode on the cap layer to finish the preparation of a gallium nitride HEMT (High Electron Mobility Transistor ) device;
step 3: adopting PECVD (Plasma Enhanced Chemical Vapor Deposition ) equipment to deposit a SiO2 barrier layer on the surface of the gallium nitride heterostructure material, wherein the thickness is 10-100 nm;
step 4: placing a gallium nitride heterostructure material containing SiO2 into a magnetron sputtering device to grow a Ni/Au metal layer, wherein the thickness of the Ni metal is 3-10 nm, and the thickness of the Au is 50-200 nm; forming a gallium nitride complex;
step 5: coating an adhesive material on a first surface (a surface adhered to a metal layer of a subsequent gallium nitride compound) of a temporary slide by adopting a spin coating method, controlling the rotating speed to be 1200-3000 rpm, and controlling the time to be 30-60 seconds;
step 6: baking the temporary slide coated with the adhesive material in stages to remove most of gas and volatile solvents in the adhesive, wherein in the first stage: controlling the temperature of a hot plate to 120 ℃ and baking for 3 minutes; the first stage: controlling the temperature of a hot plate to 180 ℃ and baking for 4 minutes;
step 7: after baking, bonding the surface of the metal layer of the gallium nitride compound body and the first surface of the temporary slide, heating and pressurizing the metal layer, controlling the bonding temperature to be 200-350 ℃, controlling the bonding pressure to be 1000-2000N, cooling the metal layer to room temperature, and completing the temporary bonding process;
step 8: placing the temporarily bonded gallium nitride compound into a KrF excimer laser stripping system chamber, enabling the bottom surface of a sapphire substrate to face upwards, enabling excimer laser to irradiate a gallium nitride compound sample through the sapphire substrate, setting a laser scanning track, adjusting laser power, laser spot size and shape, laser stepping and other technological parameters, and then starting a laser scanning process through a software control system; the laser scanning track is Z-shaped; the wavelength of the laser is 193/248nm, the pulse width is 25s, and the frequency is 50Hz;
step 9: after the pulse excimer laser covers the whole area of the gallium nitride complex according to the set track, the sapphire substrate on the gallium nitride complex is automatically separated, ga metal on the surface of the gallium nitride complex is further cleaned, and stripping of the sapphire substrate and the gallium nitride complex is completed;
step 10: bonding the gallium nitride complex subjected to laser stripping with a target substrate to realize transfer of the gallium nitride complex to other high-heat-conductivity substrates;
step 11: placing the gallium nitride compound containing the target substrate in a special glue removing solution, soaking for a period of time, separating the temporary slide from the gallium nitride compound, and completely removing the adhesive material;
step 12: immersing the metal layer of the gallium nitride complex in aqua regia, and removing the Ni/Au metal layer on the upper surface of the GaN wafer;
step 13: and immersing the wafer with the SiO2 layer covered on the upper surface of the gallium nitride compound in hydrofluoric acid solution, removing the SiO2 layer on the surface of the gallium nitride compound, and completing the transfer of the gallium nitride HEMT device from the sapphire substrate to the target substrate.
In this embodiment, the electrode is directly fabricated on the gallium nitride heterostructure material, and a protective layer for protecting the metal layer from direct contact is deposited when the metal layer is subsequently removed, so that the electrode is also damaged when the metal layer is dissolved. In this embodiment, the gallium nitride composite has more electrodes and protective layers than in the previous embodiment.
The invention has the following beneficial technical effects: aiming at the problem of microcrack in Fe-doped GaN laser stripping, by growing a high-ductility metal material on the surface of a GaN wafer, N generated by GaN thermal decomposition can be effectively absorbed due to the good ductility of a metal layer in the laser stripping process 2 The generated pressure and larger stress generated by internal stress relaxation of the Fe-doped GaN material can avoid the damage problem of Fe-doped GaN laser stripping, improve the quality of Fe-doped GaN laser stripping, and have important significance for transferring the Fe-doped GaN material and the device to a substrate with high thermal conductivity. Further improving the yield of the process and reducing the production cost.
As shown in fig. 3, a further aspect of the present invention further proposes a computer device, including:
at least one processor 21; and
a memory 22, said memory 22 storing computer instructions 23 executable on said processor 21, said instructions 23 when executed by said processor 21 implementing the steps of any of the methods of the above embodiments.
As shown in fig. 4, a further aspect of the present invention also proposes a computer readable storage medium 401, said computer readable storage medium 401 storing a computer program 402, said computer program 402 being implemented when executed by a processor
A laser lift-off method of gallium nitride material, comprising:
depositing a metal layer on the surface of the deposited gallium nitride heterostructure material to form a gallium nitride complex;
and in response to the completion of the metal layer deposition, stripping the substrate on the gallium nitride composite body by laser, and washing the metal layer on the gallium nitride composite body by a preset mode to obtain the gallium nitride material.
In some embodiments of the invention, the method further comprises:
and migrating the gallium nitride material to a target substrate in a preset mode to form a target device.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
preparing an electrode of a target gallium nitride device on the surface of the gallium nitride heterostructure material formed by deposition, and further depositing a protective layer on the surface of the gallium nitride device forming the electrode;
and in response to the completion of the deposition of the protective layer, depositing a metal layer on the protective layer to form a gallium nitride composite.
In some embodiments of the invention, the method further comprises:
and responding to the metal layer on the gallium nitride compound body to be washed by a preset mode, and selecting a corresponding dissolving agent according to the used material of the protective layer to dissolve the protective layer to obtain the gallium nitride material.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
and depositing and growing one or more metal layers with preset thickness of preset materials on the surface of the gallium nitride heterostructure material through a magnetron sputtering device.
In some embodiments of the present invention, depositing a metal layer on a surface of a deposited gallium nitride heterostructure material to form a gallium nitride composite includes:
spin-coating an adhesive material on the surface of the temporary slide, controlling the spin-coating rotation speed in spin-coating to a predetermined range and maintaining the spin-coating rotation speed for a first predetermined time.
In some embodiments of the invention, the method further comprises:
in response to the spin coating of the adhesive material being completed, the temporary slide spin coated with the adhesive material is baked in stages.
In some embodiments of the invention, the staged baking of the temporary carrier sheet spin coated with adhesive material comprises:
baking at a first predetermined temperature and for a second predetermined time in a first stage;
in response to the first stage bake being completed, the bake is performed at a second predetermined temperature and for a third predetermined time.
In some embodiments of the invention, the method further comprises:
the temporary carrier sheet is bonded to the gallium nitride composite by the bonding material in response to completion of the staged baking of the temporary carrier sheet and bonding material.
In some embodiments of the invention, bonding the temporary carrier with the gallium nitride composite by the bonding material comprises:
and (3) attaching one surface of the temporary slide glass, which is coated with an adhesive material, to the metal layer of the gallium nitride composite body, applying a preset pressure in a direction penetrating through the temporary slide glass and the gallium nitride composite body, and controlling the bonding temperature to be a third preset temperature to naturally cool to form the gallium nitride composite body containing the temporary slide glass.
In some embodiments of the invention, in response to the metal layer deposition being completed, the stripping of the substrate on the gallium nitride composite by the laser comprises:
irradiating a laser of a predetermined wavelength, a predetermined pulse width, a predetermined frequency and a predetermined power at the substrate according to a predetermined trend to detach the substrate on the gallium nitride composite body.
In some embodiments of the invention, the method further comprises:
and bonding the gallium nitride compound separated from the substrate with the target substrate, and placing the gallium nitride compound containing the target substrate into a preset photoresist removing solution to soak for a fourth preset time so as to remove the temporary slide on the surface of the gallium nitride compound.
In some embodiments of the invention, washing the metal layer on the gallium nitride composite in a predetermined manner to obtain a gallium nitride material comprises:
and placing the metal layer of the gallium nitride composite body containing the target substrate and removing the temporary slide according to the metal used by the metal layer into a solution capable of dissolving the metal, and soaking to remove the metal layer to obtain the gallium nitride material.
The foregoing is an exemplary embodiment of the present disclosure, but it should be noted that various changes and modifications could be made herein without departing from the scope of the disclosure as defined by the appended claims. The functions, steps and/or actions of the method claims in accordance with the disclosed embodiments described herein need not be performed in any particular order. Furthermore, although elements of the disclosed embodiments may be described or claimed in the singular, the plural is contemplated unless limitation to the singular is explicitly stated.
It should be understood that as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly supports the exception. It should also be understood that "and/or" as used herein is meant to include any and all possible combinations of one or more of the associated listed items.
The foregoing embodiment of the present invention has been disclosed with reference to the number of embodiments for the purpose of description only, and does not represent the advantages or disadvantages of the embodiments.
It will be understood by those skilled in the art that all or part of the steps for implementing the above embodiments may be implemented by hardware, or may be implemented by a program for instructing relevant hardware, where the program may be stored in a computer readable storage medium, and the storage medium may be a read-only memory, a magnetic disk or an optical disk, etc.
Those of ordinary skill in the art will appreciate that: the above discussion of any embodiment is merely exemplary and is not intended to imply that the scope of the disclosure of embodiments of the invention, including the claims, is limited to such examples; combinations of features of the above embodiments or in different embodiments are also possible within the idea of an embodiment of the invention, and there are many other variations of the different aspects of the embodiments of the invention as described above, which are not provided in detail for the sake of brevity. Therefore, any omission, modification, equivalent replacement, improvement, etc. of the embodiments should be included in the protection scope of the embodiments of the present invention.
Claims (16)
1. A laser lift-off method of gallium nitride material, comprising:
depositing a metal layer on the surface of the deposited gallium nitride heterostructure material to form a gallium nitride complex;
in response to the completion of the deposition of the metal layer, peeling the substrate on the gallium nitride composite body by laser, and washing the metal layer on the gallium nitride composite body by a preset mode to obtain a gallium nitride material;
the method for forming the gallium nitride composite by depositing the metal layer on the surface of the deposited gallium nitride heterostructure material comprises the following steps:
spin-coating an adhesive material on the surface of the temporary slide, controlling the spin-coating rotation speed in spin-coating to be in a preset range and maintaining the first preset time;
in response to completion of spin coating of the adhesive material, baking the temporary slide spin coated with the adhesive material in stages;
bonding the temporary carrier sheet with the gallium nitride composite through the bonding material in response to completion of the staged baking of the temporary carrier sheet and the bonding material;
the bonding of the temporary carrier with the gallium nitride composite by the bonding material includes:
and adhering one surface of the temporary slide glass, which is coated with the adhesive material, to the metal layer of the gallium nitride complex.
2. The method as recited in claim 1, further comprising:
and migrating the gallium nitride material to a target substrate in a preset mode to form a target device.
3. The method of claim 1, wherein depositing a metal layer on a surface of the deposited gallium nitride heterostructure material to form a gallium nitride composite comprises:
and preparing an electrode of the target gallium nitride device on the surface of the gallium nitride heterostructure material formed by deposition, and further depositing a protective layer on the surface of the gallium nitride device forming the electrode.
4. The method of claim 3, wherein depositing a metal layer on a surface of the deposited gallium nitride heterostructure material to form a gallium nitride composite further comprises:
and in response to the completion of the deposition of the protective layer, depositing a metal layer on the protective layer to form a gallium nitride composite.
5. The method as recited in claim 4, further comprising:
and responding to the metal layer on the gallium nitride compound body to be washed by a preset mode, and selecting a corresponding dissolving agent according to the used material of the protective layer to dissolve the protective layer to obtain the gallium nitride material.
6. The method of claim 1, wherein depositing a metal layer on a surface of the deposited gallium nitride heterostructure material to form a gallium nitride composite comprises:
and depositing and growing one or more metal layers with preset thickness of preset materials on the surface of the gallium nitride heterostructure material through a magnetron sputtering device.
7. The method of claim 1, wherein the step of baking the temporary slide spin-coated with adhesive material comprises:
the baking is performed at a first predetermined temperature and maintained for a second predetermined time in the first stage.
8. The method of claim 7, wherein the staged baking of the temporary slide spin coated with adhesive material further comprises:
in response to the first stage bake being completed, the bake is performed at a second predetermined temperature and for a third predetermined time.
9. The method of claim 1, wherein bonding the temporary carrier with a gallium nitride composite via the bonding material further comprises:
a pressure of a predetermined magnitude is applied in a direction through the temporary slide and the gallium nitride composite.
10. The method of claim 9, wherein bonding the temporary carrier with a gallium nitride composite via the bonding material further comprises:
and controlling the bonding temperature to be a third preset temperature to be naturally cooled to form the gallium nitride complex containing the temporary slide glass.
11. The method of claim 1, wherein the stripping the substrate on the gallium nitride composite by the laser in response to the metal layer deposition being completed comprises:
irradiating a laser of a predetermined wavelength, a predetermined pulse width, a predetermined frequency and a predetermined power at the substrate according to a predetermined trend to detach the substrate on the gallium nitride composite body.
12. The method as recited in claim 1, further comprising: the gallium nitride composite from the substrate is bonded to the target substrate.
13. The method as recited in claim 12, further comprising:
and placing the gallium nitride compound containing the target substrate into a preset photoresist removing solution to soak for a fourth preset time so as to remove the temporary slide on the surface of the gallium nitride compound.
14. The method of claim 1, wherein washing the metal layer on the gallium nitride composite by a predetermined manner to obtain a gallium nitride material comprises:
and placing the metal layer of the gallium nitride composite body containing the target substrate and removing the temporary slide according to the metal used by the metal layer into a solution capable of dissolving the metal, and soaking to remove the metal layer to obtain the gallium nitride material.
15. A computer device, comprising:
at least one processor; and
a memory storing computer instructions executable on the processor, which when executed by the processor, perform the steps of the method of any one of claims 1-14.
16. A computer readable storage medium storing a computer program which, when executed by a processor, implements the steps of the method of any one of claims 1-14.
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| CN105514224B (en) * | 2014-09-25 | 2019-01-22 | 东莞市中镓半导体科技有限公司 | A kind of preparation method of the low-stress state compound substrate for GaN growth |
| CN109585615B (en) * | 2018-12-04 | 2020-07-24 | 西安赛富乐斯半导体科技有限公司 | Method for stripping gallium nitride epitaxial layer from substrate |
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| CN105514231A (en) * | 2014-09-25 | 2016-04-20 | 东莞市中镓半导体科技有限公司 | Low stress state composite substrate for GaN growth |
| CN106449912A (en) * | 2016-11-28 | 2017-02-22 | 东莞市中镓半导体科技有限公司 | GaN-based composite substrate with stress balance structural layer and method for preparing GaN-based composite substrate |
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