CN106449912A - GaN-based composite substrate with stress balance structural layer and method for preparing GaN-based composite substrate - Google Patents
GaN-based composite substrate with stress balance structural layer and method for preparing GaN-based composite substrate Download PDFInfo
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- CN106449912A CN106449912A CN201611061521.3A CN201611061521A CN106449912A CN 106449912 A CN106449912 A CN 106449912A CN 201611061521 A CN201611061521 A CN 201611061521A CN 106449912 A CN106449912 A CN 106449912A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
The invention discloses a GaN-based composite substrate with a stress balance structural layer and a method for preparing the GaN-based composite substrate. The GaN-based composite substrate comprises a heat conduction and electric conduction transfer substrate, bonding medium layers, a GaN-based epitaxial thin film and the stress balance structural layer. The stress balance structural layer is arranged between the heat conduction and electric conduction transfer substrate and the corresponding bonding medium layer or on the back surface of the heat conduction and electric conduction transfer substrate or between the bonding medium layers or inside the GaN-based epitaxial thin film or between the corresponding bonding medium layer and the GaN-based epitaxial thin film. The GaN-based composite substrate and the method have the advantages that the GaN-based composite substrate comprises the stress balance structural layer, accordingly, internal residual stress and warping deformation of the substrate can be effectively reduced, various properties and the GaN homoepitaxy quality of the transfer implementation GaN-based composite substrate can be obviously improved, late-period chip process difficulty can be lowered, and the cost can be effectively controlled.
Description
Technical field
The present invention relates to a kind of GaN base compound substrate with stress equilibrium structure sheaf and preparation method thereof.
Background technology
GaN, as the main representative of third generation semi-conducting material, has and realizes high temperature, high power, high frequency and high speed device
The excellent performance of part, and can apply to prepare high-end microelectronic component needed for Aero-Space, have become as international photoelectron neck
The study hotspot in domain.At present, because preparing of GaN body monocrystalline is extremely difficult, large size single crystal GaN is difficult to directly obtain, and valency
Lattice are expensive, and the epitaxial growth of GaN material system is mainly based upon the heterogeneous epitaxial technology of big mismatch.In view of sapphire is chemically and thermally
Stability preferably, low price it is easy to cleaning treatment, can large scale steady production the advantages of, what current industry was commonly used is blue precious
Two-step growth method extension GaN material is adopted on stone lining bottom.This achieve larger one-tenth based on the heterogeneous epitaxial technology of cushion
Work(, wherein blue and green light LED have been carried out commercialization, but this technique could not give full play to the excellent of GaN base semi-conducting material
More performance, is mainly reflected in：Sapphire electric conductivity is poor, leads to related device cannot realize vertical stratification, reduces material
Utilization rate；Sapphire heat conductivility is bad, and heat dissipation problem projects, and limits its application on high temperature and high power device；Blue
Gem hardness is higher, and is difficult cleavage it is impossible to obtain the Cavity surface of GaN base device by the method for cleavage.
Silicon substrate has that thermal and electric conductivity properties are excellent, cost is relatively low, the advantages of easy of integration, becomes GaN base LED neck in recent years
One of problem of domain research, but the dislocation density that there are still epitaxial layer in extension GaN technology on existing Si substrate is higher etc. asks
Topic.Carborundum is the ideal substrate of extension GaN, and its lattice mismatch and between GaN and thermal mismatching are less, and possess good heat conduction
Electric conductivity, can greatly simplify processing technology, but SiC substrate is expensive, there is adhesiveness etc. between epitaxial layer and substrate
Problem, should not carry out industrialized production.Therefore, the difficulty growing high-quality GaN epitaxial film on Si and SiC substrate is higher.
Existing a part of research institution begins to focus on the technology that medium bonding and laser lift-off combine, and will have SQW
Isostructural GaN epitaxial layer or chip are transferred on the substrate of high heat conductance high conductivity by Sapphire Substrate, prepare vertical junction
Structure device, to eliminate the adverse effect of Sapphire Substrate, this does not fundamentally solve the big mismatch of hetero-epitaxy and causes crystal
Second-rate problem, and it is bonded serious to quantum well structure infringement with substrate desquamation process.For these reasons, had one
Part research institution begins to focus on the technology that medium bonding and laser lift-off combine, and GaN epitaxy single crystalline layer is transferred to hyperpyrexia
On the substrate of conductance high conductivity, which solve Sapphire Substrate insulation and not Heat Conduction Problems, possess excellent heat-conductivity conducting
Can, can be directly used for preparing light emitting diode (LED) chip with vertical structure, greatly simplify production technology, improve the utilization rate of backing material, reduce
Cost, and with respect to conventional light emitting diode (LED) chip with vertical structure preparation method, solve the former reflecting mirror and yield issues.This
Outward, transfer process, before preparing quantum well structure, will not be damaged quantum well structure and corresponding optical property, and its cost is notable
Less than SiC base GaN compound substrate.
As Patent No. 201210068033.0, a kind of entitled preparation method of the compound substrate for GaN growth, and
Number of patent application is 201210068026.0, a kind of entitled formerly patent of the compound substrate for GaN growth, to based on Jie
Matter bonding and laser lift-off technique are prepared compound substrate for GaN growth and preparation method thereof and are described.But make at present
Prepare heat-conductivity conducting GaN compound substrate with medium bonding and laser lift-off, there are the following problems：1. main, most critical
Technical problem：In the heat-conductivity conducting GaN compound substrate of medium bonding and laser lift-off realization, residual stress is larger, makes
Become substrate warpage serious, some substrates even can form crackle, fold and backspace key and close phenomenon, affect yields, significantly improve
Cost；2. peripheral issue：1) substrate warpage is serious, affects follow-up homoepitaxy effect, and infringement luminescent properties and wavelength are uniform
Property and the yields of chip.2) in substrate, residual stress is larger, increased the difficulty of follow-up homoepitaxy it is easier to outside homogeneity
Crackle, fold, backspace key is caused to close phenomenon, the crystal mass that impact homoepitaxy obtains during prolonging.3) substrate warpage is serious, meeting
Impact chip technology, is unfavorable for preparing photoetching and the para-position preparing electrode process in chip processes, the performance of reduction product with become
Product rate.
Content of the invention
The technical problem to be solved in the present invention is to provide a kind of GaN base compound substrate with stress equilibrium structure sheaf and its system
Preparation Method, can effectively reduce the residual stress in substrate and buckling deformation, significantly improve each of the GaN compound substrate that transfer is realized
Item performance, GaN homoepitaxy quality and later stage chip technology difficulty, effective control cost.
In order to solve above-mentioned technical problem, the present invention takes below scheme：
A kind of GaN base compound substrate with stress equilibrium structure sheaf, what described substrate included setting gradually from lower to upper leads
Thermal conductivity electrotransfer substrate, bonding medium layer and GaN base epitaxial film, and it is arranged on heat-conductivity conducting transfer substrate and bonding medium
Stress equilibrium structure sheaf between layer.
A kind of GaN base compound substrate with stress equilibrium structure sheaf, what described substrate included setting gradually from lower to upper leads
Thermal conductivity electrotransfer substrate, bonding medium layer and GaN base epitaxial film, and it is arranged on the stress that heat-conductivity conducting shifts substrate back
Balanced structure layer.
A kind of GaN base compound substrate with stress equilibrium structure sheaf, what described substrate included setting gradually from lower to upper leads
Thermal conductivity electrotransfer substrate, bonding medium layer and GaN base epitaxial film, and it is arranged on the stress equilibrium knot in the middle of bonding medium layer
Structure layer.
A kind of GaN base compound substrate with stress equilibrium structure sheaf, what described substrate included setting gradually from lower to upper leads
Thermal conductivity electrotransfer substrate, bonding medium layer and GaN base epitaxial film, and the stress being arranged within GaN base epitaxial film is flat
Weighing apparatus structure sheaf.
A kind of GaN base compound substrate with stress equilibrium structure sheaf, what described substrate included setting gradually from lower to upper leads
Thermal conductivity electrotransfer substrate, bonding medium layer and GaN base epitaxial film, and it is arranged on GaN base epitaxial film and bonding medium layer
Between stress equilibrium structure sheaf
Described stress equilibrium structure sheaf is one of GaN film, AlN thin film and InN thin film or wherein any two
Plant or three kinds of alloy firms combining；
Or stress equilibrium structure sheaf is Al2O3、ZnO、SiO2、ITO、MgO、La2O3And Y2O3One of；
Or stress equilibrium structure sheaf is in molybdenum, gold, titanium, copper, palladium, tungsten, nickel, chromium, platinum, tantalum, niobium, vanadium, zirconium, rhenium and hafnium
A kind of elemental metals or any two kinds or arbitrarily two or more combined alloy；
Or stress equilibrium structure sheaf be silicon, aluminum, nickel, chromium, platinum, molybdenum, gold, palladium, copper, tungsten, tantalum, niobium, vanadium, zirconium, titanium, rhenium and
One of hafnium or any two kinds or the arbitrarily two or more compound generating with carbon, nitrogen, silicon or boron；
Or stress equilibrium structure sheaf be resin matrix and conducting particles silver, gold, copper, aluminum, zinc, ferrum, nickel, titanium, molybdenum, palladium,
One of chromium, copper, tungsten and graphite or the conducting polymer of any two kinds or arbitrarily two or more composition；
Or stress equilibrium structure sheaf be conducting particles silver, gold, copper, aluminum, zinc, ferrum, nickel, titanium, molybdenum, palladium, chromium, copper, tungsten and
The electrocondution slurry that in graphite, the microgranule of any one is formed with binding agent, solvent or auxiliary agent；
Or stress equilibrium structure sheaf is silicate-base high-temperature electric conduction glue；
Or stress equilibrium structure sheaf is the high temperature alloy slurry that nickel, chromium, silicon and boron are formed.
A kind of preparation method of the GaN base compound substrate with stress equilibrium structure sheaf, for preparing nitrogen polar surface upward
GaN base compound substrate, comprises the following steps：
Epitaxial growth GaN base epitaxial film obtains sapphire GaN base compound substrate on a sapphire substrate；
Stress equilibrium structure sheaf is prepared on relevant position；
Preparation bonding on the GaN base epitaxial film surface of sapphire GaN base compound substrate and heat-conductivity conducting transfer substrate
Then GaN base epitaxial film and heat-conductivity conducting are shifted substrate by this bonding medium layer and are bonded, realize GaN by dielectric layer
Base epitaxial film shifts being bonded of substrate with heat-conductivity conducting, and the temperature adopting during bonding is 0 DEG C -2000 DEG C, and pressure is 20 kilograms
Power/square inch is to 20 tons/square inch；
Remove Sapphire Substrate, surface clean carried out to the compound substrate being obtained, obtain with stress equilibrium structure and
Nitrogen polar surface GaN base epitaxial film upward shifts the GaN base compound substrate together with substrate bonding with heat-conductivity conducting.
A kind of preparation method of the GaN base compound substrate with stress equilibrium structure sheaf, is used for preparing gallium polarity face-up
GaN compound substrate, comprises the following steps：
Epitaxial growth GaN base epitaxial film obtains sapphire GaN base compound substrate on a sapphire substrate, using bonding agent
GaN base epitaxial film is connected on interim transfer substrate, removes former Sapphire Substrate；
Prepare stress equilibrium structure sheaf in relevant position；
GaN base epitaxial film on bonding to interim transfer substrate and heat-conductivity conducting transfer substrate surface prepare key respectively
Close dielectric layer, then the bonding medium layer on GaN base epitaxial film surface and heat-conductivity conducting are shifted the bonding medium of substrate surface
Layer is bonded, and realizes GaN base epitaxial film and heat-conductivity conducting and shifts being bonded of substrate, the temperature adopting during bonding for 0 DEG C-
2000 DEG C, pressure is 20 kgfs/square inch to 20 tons/square inch；
In bonding process, bonding agent carbonization at high temperature, interim transfer substrate takes off automatically from GaN base epitaxial film surface
Fall, surface clean is carried out to the compound substrate being obtained, obtain with stress equilibrium structure sheaf and the face-up GaN base of gallium polarity
Epitaxial film shifts the GaN base compound substrate together with substrate bonding with heat-conductivity conducting.
The present invention inserts stress equilibrium structure sheaf in GaN base compound substrate, to balance or to offset residual in compound substrate
Residue stress.Obtained compound substrate it is adaptable to homoepitaxy and directly prepare vertical structure LED device, be provided simultaneously with low should
Power and little warped state, can significantly improve transfer realize the properties of GaN base compound substrate, GaN homoepitaxy quality with
And later stage chip technology difficulty, larger development potentiality and market prospect can be had with effective control cost.
Brief description
Accompanying drawing 1 is embodiment one generalized section of substrate of the present invention；
Accompanying drawing 2 is embodiment two generalized section of substrate of the present invention；
Accompanying drawing 3 is embodiment three generalized section of substrate of the present invention；
Accompanying drawing 4 is the example IV generalized section of substrate of the present invention；
Accompanying drawing 5 is embodiment five generalized section of substrate of the present invention；
Accompanying drawing 6-1 is the preparation process schematic diagram of preparation method embodiment one of the present invention；
Accompanying drawing 6-2 is the preparation process schematic diagram of preparation method embodiment one of the present invention；
Accompanying drawing 6-3 is the preparation process schematic diagram of preparation method embodiment one of the present invention；
Accompanying drawing 6-4 is the preparation process schematic diagram of preparation method embodiment one of the present invention；
Accompanying drawing 6-5 is that the preparation of preparation method embodiment one of the present invention completes schematic diagram；
Accompanying drawing 7-1 is the preparation process schematic diagram of preparation method embodiment two of the present invention；
Accompanying drawing 7-2 is the preparation process schematic diagram of preparation method embodiment two of the present invention；
Accompanying drawing 7-3 is the preparation process schematic diagram of preparation method embodiment two of the present invention；
Accompanying drawing 7-4 is that the preparation of preparation method embodiment two of the present invention completes schematic diagram；
Accompanying drawing 8 is the preparing processes schematic diagram of preparation method embodiment three of the present invention；
Accompanying drawing 9 is the preparing processes schematic diagram of preparation method example IV of the present invention；
Accompanying drawing 10 is the preparing processes schematic diagram of preparation method embodiment five of the present invention.
Specific embodiment
For the ease of the understanding of those skilled in the art, the invention will be further described below in conjunction with the accompanying drawings.
Present invention is disclosed a kind of GaN base compound substrate with stress equilibrium structure sheaf, this substrate includes heat-conductivity conducting and turns
Move substrate, bonding medium layer, GaN base epitaxial film and stress equilibrium structure sheaf, this heat-conductivity conducting transfer substrate, bonding are situated between
The annexation of matter layer, GaN base epitaxial film and stress equilibrium structure sheaf and position relationship, have following five kinds preferably to implement
Example.
Embodiment one, as shown in Figure 1, a kind of GaN base compound substrate with stress equilibrium structure sheaf, described substrate includes
Heat-conductivity conducting transfer substrate 101, bonding medium layer 103 and the GaN base epitaxial film 104, Yi Jishe setting gradually from lower to upper
Put the stress equilibrium structure sheaf 102 shifting between substrate and bonding medium layer in heat-conductivity conducting.
Embodiment two, as shown in Figure 2, a kind of GaN base compound substrate with stress equilibrium structure sheaf, described substrate includes
Heat-conductivity conducting transfer substrate 202, bonding medium layer 203 and the GaN base epitaxial film 204, Yi Jishe setting gradually from lower to upper
Put the stress equilibrium structure sheaf 201 shifting substrate back in heat-conductivity conducting.
Embodiment three, as shown in Figure 3, a kind of GaN base compound substrate with stress equilibrium structure sheaf, described substrate includes
Heat-conductivity conducting transfer substrate 301, bonding medium layer 302 and the GaN base epitaxial film 304, Yi Jishe setting gradually from lower to upper
Put the stress equilibrium structure sheaf 303 in the middle of bonding medium layer 302.Can be that the bonding that setting two links together is situated between herein
Matter layer, then stress equilibrium structure sheaf be arranged on the centre of this two bonding medium layers.
Example IV, as shown in Figure 4, a kind of GaN base compound substrate with stress equilibrium structure sheaf, described substrate includes
Heat-conductivity conducting transfer substrate 401, bonding medium layer 402 and the GaN base epitaxial film 404, Yi Jishe setting gradually from lower to upper
Put the stress equilibrium structure sheaf 403 within GaN base epitaxial film 404.
Embodiment five, as shown in Figure 5, a kind of GaN base compound substrate with stress equilibrium structure sheaf, described substrate includes
Heat-conductivity conducting transfer substrate 501, bonding medium layer 502 and the GaN base epitaxial film 504, Yi Jishe setting gradually from lower to upper
Put the stress equilibrium structure sheaf 503 between GaN base epitaxial film 504 and bonding medium layer 502.
Stress equilibrium structure sheaf can by one of GaN film, AlN thin film and InN thin film or wherein any two
Or three kinds combination alloy firms make；Or stress equilibrium structure sheaf is SiO2、Al2O3、ZnO、ITO、MgO、La2O3With
Y2O3One of make；Or stress equilibrium structure sheaf be molybdenum (Mo), golden (Au), titanium (Ti), copper (Cu), palladium (Pd), tungsten (W),
One of nickel (Ni), chromium (Cr), platinum (Pt), tantalum (Ta), niobium (Ne), vanadium (V), zirconium (Zr), rhenium (Re) and hafnium (Hf) elemental gold
Belong to or any two kinds or arbitrarily two or more combined alloy are made；Or stress equilibrium structure sheaf be silicon, aluminum, molybdenum (Mo),
Golden (Au), palladium (Pd), copper (Cu), tungsten (W), nickel (Ni), chromium (Cr), platinum (Pt), tantalum (Ta), niobium (Ne), vanadium (V), zirconium (Zr), titanium
And the compound that generates with carbon, nitrogen, silicon or boron of rhenium (Re) or hafnium (Hf) (Ti)；Or stress equilibrium structure sheaf be resin matrix and
Conducting particles silver (Ag), golden (Au), copper (Cu), aluminum (Al), zinc (Zn), ferrum (Fe), nickel (Ni), titanium (Ti), molybdenum (Mo), palladium
(Pd), the conduction of one of chromium (Cr), copper (Cu), tungsten (W) and graphite (C) or any two kinds or arbitrarily two or more composition is gathered
Compound；Or stress equilibrium structure sheaf is conducting particles silver, gold, copper, aluminum, zinc, ferrum, nickel, titanium, molybdenum, palladium, chromium, copper, tungsten and graphite
Microgranule and binding agent, the electrocondution slurry that formed of solvent or auxiliary agent；Or stress equilibrium structure sheaf is that silicate-base high temperature is led
Electric glue；Or stress equilibrium structure sheaf is the high temperature alloy slurry that nickel (Ni), chromium (Cr), silicon (Si) and boron (B) are formed.
Described bonding medium layer is molybdenum (Mo), gold (Au), palladium (Pd), copper (Cu), tungsten (W), titanium (Ti), nickel (Ni), chromium
And one of silver-colored (Ag) elemental metals or any two kinds or arbitrarily two or more combined alloy (Cr)；Or bonding medium layer
Be resin matrix and conducting particles silver (Ag), golden (Au), copper (Cu), aluminum (Al), zinc (Zn), ferrum (Fe), nickel (Ni), titanium (Ti),
One of molybdenum (Mo), palladium (Pd), chromium (Cr), copper (Cu), tungsten (W) and graphite (C) or any two kinds or arbitrarily two or more structure
The conducting polymer becoming；Or bonding medium layer is conducting particles silver (Ag), golden (Au), copper (Cu), aluminum (Al), zinc (Zn), ferrum
(Fe), one of nickel (Ni), titanium (Ti), molybdenum (Mo), palladium (Pd), chromium (Cr), copper (Cu), tungsten (W) and graphite (C) or any two
The electrocondution slurry that kind or arbitrarily two or more micropartical and binding agent, solvent or auxiliary agent are formed；Or bonding medium layer is
Silicate-base high-temperature electric conduction glue；Or the high temperature alloy slurry that nickel (Ni), chromium (Cr), silicon (Si) and boron (B) are formed；Or key
Closing dielectric layer is SiO2.
Heat-conductivity conducting transfer substrate is in molybdenum (Mo), copper (Cu), tungsten (W), titanium (Ti), palladium (Pd), nickel (Ni) and chromium (Cr)
A kind of elemental metals or any two kinds or arbitrarily two or more combined alloy, or silicon crystal, carborundum crystals, AlSi
Crystal or metal glass.
The thickness of bonding medium layer is 1 nanometer to 100 microns, preferably 500 nanometers to 20 microns；Heat-conductivity conducting transfer lining
The thickness at bottom is 1 nanometer to 3000 microns, preferably 50 microns to 1000 microns；The thickness of stress equilibrium structure sheaf is 1 nanometer
To 500 microns, preferably 10 microns to 100 microns.And this bonding medium layer and stress equilibrium structure sheaf are monolayer, two-layer
Or the structure in two-layer, or composition gradual change Rotating fields.
Additionally, stress equilibrium structure sheaf may be selected using magnetron sputtering, ald, physical vapour deposition (PVD), chemical gas
Mutually deposition, plating, molecular beam epitaxy, plasma enhanced chemical vapor deposition, medium bonding, Direct Bonding, spin coating, metal have
, in relevant position, also including deposition should for chemical machine vapour deposition, hydride gas-phase epitaxy or the preparation of vacuum thermal evaporation technology
The aftertreatment technologys such as the thermal annealing after dynamic balance structure sheaf.
Described stress equilibrium structure sheaf, if preparation is between bonding medium layer and GaN base epitaxial film, can be in GaN
Before base epitaxial growth, first prefabricated stress equilibrium structure sheaf, then extension GaN base epitaxial film, carry out substrate transfer process, or
Stress equilibrium structure sheaf, redeposited bonding medium layer are prepared in the surface of GaN base epitaxial film, carry out substrate transfer process.
Described stress equilibrium structure sheaf, may be selected to prepare before using substrate transfer technology preparation GaN base compound substrate, or
Person is during substrate transfer technology preparation GaN base compound substrate, or is combined using substrate transfer technology preparation GaN
After substrate.
Described stress equilibrium structure sheaf, can be membrane structure, or carries cylinder, cone, triangular pyramidal, four sides
The structure of the shapes such as shape, triangle, striated and annular, to reach more preferable stress equilibrium, release and the effect reducing warpage
Really.
Above-mentioned heat-conductivity conducting bonding medium layer, then utilize magnetron sputtering, plating, vacuum thermal evaporation, PECVD or wet method work
Skill, preparation is on the surface of GaN base epitaxial film and heat-conductivity conducting substrate.
In addition, present invention further teaches a kind of preparation method of the GaN base compound substrate with stress equilibrium structure sheaf, taking off altogether
Show two kinds of preparation methoies, be respectively used to prepare the nitrogen polar surface face-up compound substrate with gallium polarity upward.Wherein prepare nitrogen
Polarity face-up compound substrate method specifically includes following steps：
S1, on a sapphire substrate epitaxial growth GaN base epitaxial film obtain sapphire GaN base compound substrate.
S2, prepares stress equilibrium structure sheaf in relevant position；
S3, prepares key on the GaN base epitaxial film surface of sapphire GaN base compound substrate and heat-conductivity conducting transfer substrate
Close dielectric layer, then GaN base epitaxial film and heat-conductivity conducting are shifted by substrate by this bonding medium layer and be bonded, realize
GaN base epitaxial film shifts being bonded of substrate with heat-conductivity conducting, and the temperature adopting during bonding is 0 DEG C -2000 DEG C, and pressure is 20 public affairs
Jin power/square inch is to 20 tons/square inch；
S4, removes Sapphire Substrate, carries out surface clean to the compound substrate being obtained, obtain with stress equilibrium structure
And nitrogen polar surface GaN base epitaxial film upward shifts the GaN base compound substrate together with substrate bonding with heat-conductivity conducting.
Prepare gallium polarity face-up compound substrate method and specifically include following steps：
S11, on a sapphire substrate epitaxial growth GaN base epitaxial film obtain sapphire GaN base compound substrate, using viscous
Connect agent GaN base epitaxial film is connected on interim transfer substrate, remove former Sapphire Substrate；
S22, prepares stress equilibrium structure sheaf in relevant position；
S33, the GaN base epitaxial film on bonding to interim transfer substrate and heat-conductivity conducting transfer substrate surface are made respectively
Then the bonding medium layer on GaN base epitaxial film surface is shifted being bonded of substrate surface with heat-conductivity conducting by standby bonding medium layer
Dielectric layer is bonded, and realizes GaN base epitaxial film and shifts being bonded of substrate with heat-conductivity conducting, and the temperature adopting during bonding is 0
DEG C -2000 DEG C, pressure is 20 kgfs/square inch to 20 tons/square inch；
S44, in bonding process, bonding agent carbonization at high temperature, interim transfer substrate is from GaN base epitaxial film surface certainly
Move and come off, surface clean is carried out to the compound substrate being obtained, obtains with stress equilibrium structure and the face-up GaN of gallium polarity
Base epitaxial film shifts the GaN base compound substrate together with substrate bonding with heat-conductivity conducting.
Lower noodle producing method is to be embodied as being described in detail
Embodiment one
It is used AlN as stress equilibrium structure sheaf, Ni/Pd bonding Si substrate and GaN base film epitaxial layer, obtain gallium polarity
The low stress facing outwardly and the GaN base compound substrate of warped state, concrete preparation method is as follows：
(1) prepare the sapphire GaN base compound substrate of gluing transfer：In 2 inches 430 microns thick flat board Sapphire Substrate
On, first 4 microns of thick GaN single crystal layers of epitaxial growth, then in HVPE room, growth thickeies GaN epitaxy film thickness to 30 microns,
Then using 502 glue, this GaN epitaxy film is bonded on 2 inches 500 microns thick pottery temporary substrates, ceramic substrate is as turning
Move support substrate, using laser lift-off, former extension Sapphire Substrate is removed afterwards, that is, obtain the GaN being bonded in ceramic substrate
Single crystalline layer, as in Figure 6-1.
(2) on a si substrate by the surface being bonded, the AlN layer of extension 50nm, as stress equilibrium structure sheaf, such as scheme
Shown in 6-2.
(3) the GaN face of GaN epitaxy film on a ceramic substrate and Si substrate AlN layer surface in bonding, respectively using magnetic control
The Ni layer of 500nm and the Pd layer of 2um are prepared in sputtering, as the bonding medium layer of heat-conductivity conducting, then in 600 DEG C of temperature, pressure
For, under 10T, carrying out the bonding of 60 minutes, realize being bonded of GaN epitaxy film and Si substrate, as shown in Fig. 6-3.
(4) in bonding process, the carbonization at high temperature of 502 glue, ceramic substrate is from GaN epitaxy film surface Automatic-falling, right
The compound substrate being obtained carries out the surface clean technique such as hydrochloric acid, acetone, then obtain Ni/Pd bonding, device architecture be from toward
Under the compound substrate of GaN/Ni/Pd/Pd/Ni/AlN/Si that is arranged in order, as shown in Fig. 6-4.
(5) this compound substrate comprises one layer 300 microns thick Si substrates, by a thickness adjustable Ni/Pd bonding medium
The layer GaN epitaxy film thick with 30 microns is bonded together, and is used AlN thin film on Si substrate for the extension in advance to put down as stress
Weighing apparatus structure sheaf offsets the most of residual stress in substrate, as shown in Fig. 6-5.Obtained compound substrate is good except having
Outside high-temperature stability, residual stress and substrate warpage situation have and significantly improve, and are more suitable for GaN isoepitaxial growth and chip
Technique.
Embodiment two
AlGaN composition graded bedding is used as stress equilibrium structure sheaf, high temperature alloy slurry (NiCrSiB) bonding MoCu lining
Bottom and GaN epitaxial layer, obtain the GaN base compound substrate of nitrogen polar surface low stress outwardly and warped state, concrete preparation method
As follows：
(1) Sapphire Substrate Epitaxial growth GaN single crystal layer obtains process for sapphire-based GaN compound substrate：Micro- at 2 inch 430
In the thick flat board Sapphire Substrate of rice, first 1 micron of thick GaN single crystal layer of epitaxial growth, then one layer of 500 nanometer thickness of extension
As stress equilibrium structure sheaf, then in HVPE, growth thickeies GaN layer thickness to 25 microns to AlGaN composition graded bedding, such as attached
Shown in Fig. 7-1.
(2) in GaN face and the MoCu substrate surface of above-mentioned sapphire GaN compound substrate, rotary coating thick layer respectively
Spend the NiCrSiB high temperature alloy slurry for 10 microns, as conductive bond dielectric layer, as shown in Fig. 4-1, then in temperature 1500
DEG C, pressure is under 15T, carries out the bonding of 60 minutes, realizes being bonded of GaN single crystal layer and MoCu metal substrate, as Fig. 7-2 institute
Show.
(3) adopt laser lift-off to remove Sapphire Substrate, hydrochloric acid, acetone etc. are carried out to the compound substrate being obtained and carries out table
Face is cleaned, then obtain NiCrSiB high temperature alloy slurry bonding, device architecture (comprises AlGaN composition gradual change stress equilibrium for GaN
Structure sheaf)/NiCrSiB/NiCrSiB/MoCu compound substrate, as shown in Fig. 7-3.
(4) this compound substrate comprises one layer 150 microns thick MoCu substrates, and the wherein mass percent of Mo and Cu is respectively
20% to 80%, it is bonded in one by a thickness adjustable NiCrSiB high temperature alloy pulp layer and 25 microns of thick GaN epitaxial layer
Rise, and offset by prefabricated AlGaN composition gradual change stress equilibrium structure sheaf in GaN single crystal layer most of remaining in substrate
Stress, as shown in Fig. 7-4.In addition to having good high-temperature stability, residual stress and substrate stick up obtained compound substrate
Bent situation has and significantly improves, and is more suitable for GaN isoepitaxial growth and chip technology.
Embodiment three
With GaN/AlGaN as stress compensation layer, Ni/Cu bonding W metal substrate and GaN epitaxial layer, obtain nitrogen polar surface
Low stress outwardly and the GaN compound substrate of warped state, concrete preparation method is as follows：
(1) epitaxial growth GaN single crystal layer obtains GaN base sapphire compound substrate on a sapphire substrate：At 2 inch 430
In the thick flat board Sapphire Substrate of micron, first 4.5 microns of thick GaN single crystal layers of epitaxial growth, then growth thickeies GaN in HVPE
Thickness degree is to 25 microns.
(2) MOCVD epitaxy is used to grow 5 microns of thick GaN film and 3 microns of thick AlGaN at the back side of W metal substrate
Thin film, as stress equilibrium structure sheaf.
(3) in the GaN face of above-mentioned sapphire GaN base compound substrate, Ni and 5 using plating preparation 500 nanometer thickness are micro-
The thick Cu conductive bond dielectric layer of rice, then in 500 DEG C of temperature, pressure is under 12T, carries out the bonding of 30 minutes, realizes outside GaN
Prolong being bonded of layer and W metal substrate.
(4) Sapphire Substrate is removed using laser lift-off mode, the tables such as hydrochloric acid, acetone are carried out to the compound substrate being obtained
Face cleaning, then obtain Ni/Cu bonding, device architecture is by the GaN/Ni/Cu/W/GaN/AlGaN being arranged in order under working
Compound substrate.
(5) this compound substrate comprises one layer 500 microns thick W substrates, wherein degree >=99.95% of W, passes through
The one thickness adjustable Ni/Cu bonding medium layer GaN single crystal epitaxial layer thick with 25 microns is bonded together, and using extension in advance
GaN the and AlGaN thin film of growth offsets the most of residual stress in substrate as stress equilibrium structure sheaf, as shown in Figure 8.Institute
In addition to having good high-temperature stability, residual stress and substrate warpage situation have and significantly improve the compound substrate obtaining,
It is more suitable for GaN isoepitaxial growth and chip technology.
Example IV
Use SiO2As stress equilibrium structure sheaf, Cr/Cr bonding AlSi substrate and AlGaN epitaxial layer, obtain nitrogen polar surface
Low stress outwardly and the AlGaN compound substrate of warped state, concrete preparation method is as follows：
(1) epitaxial growth AlGaN thin film obtains sapphire AlGaN base compound substrate on a sapphire substrate：At 2 inches
In 430 microns of thick flat board Sapphire Substrate, the thick AlGaN thin film of 4 microns of epitaxial growth.
(2) in the above-mentioned AlGaN face of sapphire AlGaN base compound substrate and the front of AlSi substrate, splashed using magnetic control
Penetrate and prepare 1 micron of thick Cr conductive bond dielectric layer respectively, then deposit 1 micron of SiO in Cr layer surface respectively using PECVD2,
Then in 1200 DEG C of temperature, pressure is under 7T, carries out the bonding of 40 minutes, realizes AlGaN epitaxial layer and AlSi metal substrate
Bonding.
(4) Sapphire Substrate is removed using laser lift-off mode, hydrochloric acid, acetone are carried out to the metal composite substrate being obtained
Etc. carrying out surface clean, then obtain Cr/Cr bonding medium layer, device architecture is the AlGaN/Cr/ being arranged in order from top to bottom
SiO2/SiO2The compound substrate of/Cr/AlSi.
(5) this compound substrate comprises one layer 150 microns thick AlSi substrates, and the wherein group of Al is divided into the component of 30%, Si
For 70%, it is bonded together by a thickness adjustable Cr bonding medium layer AlGaN epitaxial single crystal layer thick with 4 microns, and makes
Use SiO2Offset the most of residual stress in substrate as stress equilibrium structure sheaf, as shown in Figure 9,.Obtained is compound
In addition to having good high-temperature stability, residual stress and substrate warpage situation have and significantly improve substrate, are more suitable for making
Standby uv-LED device.
Implement five
With AlGaN and AlN/AlGaN as two stress equilibrium structure sheafs, cosputtering AgCu/Au bonding CuW substrate and
GaN epitaxial layer, obtains the GaN compound substrate of low stress that gallium polarity faces outwardly and warped state, and concrete preparation method is as follows：
(1) prepare ZnO as the sapphire GaN base compound substrate of sacrificial release layers：In 2 inches of 430 microns of thick flat boards
200 nanometers of ZnO sacrificial release layers in Sapphire Substrate, are first deposited using magnetron sputtering technique, then epitaxial growth in MOCVD
1 micron of thick GaN single crystal layer, then the AlN/AlGaN thin film of 300 nanometers of extension is as stress equilibrium structure sheaf, then extension 3
The thick GaN single crystal layer of micron, finally in HVPE, growth thickeies GaN layer thickness to 30 microns.Then using 502 glue by this GaN
Epitaxial film bonds on 2 inch of 430 micron thick glass substrate, and glass substrate, as transfer support substrate, is shelled using chemistry afterwards
From technology, corroding ZnO sacrificial release layers using chemical reagent, thus peeling off Sapphire Substrate, that is, obtaining being bonded in glass lined
GaN single crystal layer on bottom.
(2) at the back side of 200 microns of thick CuW substrates, the AlGaN thin film of 10 microns of extension, as another stress equilibrium
Structure sheaf.
(3) in the front of CuW substrate, using 2 microns of AgCu of magnetron sputtering cosputtering, more respectively in CuW substrate and GaN
The surface of thin film sputters 1 micron of Au layer respectively, and as heat-conductivity conducting bonding medium layer, then in 380 DEG C of temperature, pressure is
Under 15T, carry out the bonding of 120 minutes, realize being bonded of GaN epitaxial layer and CuW substrate.
(4) in bonding process, the carbonization at high temperature of 502 glue, Sapphire Substrate from GaN epitaxy film surface Automatic-falling,
Hydrochloric acid, acetone etc. are carried out to the compound substrate being obtained and carries out surface clean, then obtain Au/Au bonding, device architecture is GaN
The compound substrate of (containing AlN/AlGaN stress equilibrium structure sheaf)/Au/Au/AgCu/CuW/AlGaN, as shown in Figure 7.
(5) this compound substrate comprises one layer 200 microns thick CuW substrates, and the wherein mass percent of W and Cu is respectively
20% to 80%, there is AlN/AlGaN thin film to make by a thickness adjustable AgCu and Au/Au bonding medium layer and 30 microns of thicker strip
GaN single crystal epitaxial layer for stress equilibrium structure sheaf is bonded together, and uses AlGaN stress to put down in CuW substrate back simultaneously
Weighing apparatus structure sheaf.Using two stress equilibrium structure sheafs, residual stress and substrate warpage situation have and more significantly improve, and are more suitable for
GaN homoepitaxy and chip technology.
It should be noted that the above is not limited to the present invention, in the creation design without departing from the present invention
Under the premise of, any obvious replacement is all within protection scope of the present invention.
Claims (8)
1. a kind of GaN base compound substrate with stress equilibrium structure sheaf is it is characterised in that described substrate is included from lower to upper successively
The heat-conductivity conducting transfer substrate of setting, bonding medium layer and GaN base epitaxial film, and be arranged on heat-conductivity conducting transfer substrate with
Stress equilibrium structure sheaf between bonding medium layer.
2. a kind of GaN base compound substrate with stress equilibrium structure sheaf is it is characterised in that described substrate is included from lower to upper successively
The heat-conductivity conducting transfer substrate of setting, bonding medium layer and GaN base epitaxial film, and it is arranged on the heat-conductivity conducting transfer substrate back of the body
The stress equilibrium structure sheaf in face.
3. a kind of GaN base compound substrate with stress equilibrium structure sheaf is it is characterised in that described substrate is included from lower to upper successively
The heat-conductivity conducting transfer substrate of setting, bonding medium layer and GaN base epitaxial film, and it is arranged on answering in the middle of bonding medium layer
Dynamic balance structure sheaf.
4. a kind of GaN base compound substrate with stress equilibrium structure sheaf is it is characterised in that described substrate is included from lower to upper successively
The heat-conductivity conducting transfer substrate of setting, bonding medium layer and GaN base epitaxial film, and be arranged on inside GaN base epitaxial film
Stress equilibrium structure sheaf.
5. a kind of GaN base compound substrate with stress equilibrium structure sheaf is it is characterised in that described substrate is included from lower to upper successively
The heat-conductivity conducting transfer substrate of setting, bonding medium layer and GaN base epitaxial film, and it is arranged on GaN base epitaxial film and key
Close the stress equilibrium structure sheaf between dielectric layer.
6. the GaN base compound substrate with stress equilibrium structure sheaf according to any one of claim 1-5, its feature exists
In, described stress equilibrium structure sheaf be one of GaN film, AlN thin film and InN thin film or wherein any two or
It is the alloy firm of three kinds of combinations；
Or stress equilibrium structure sheaf is Al2O3、ZnO、SiO2、ITO、MgO、La2O3And Y2O3One of；
Or stress equilibrium structure sheaf is one of molybdenum, gold, titanium, copper, palladium, tungsten, nickel, chromium, platinum, tantalum, niobium, vanadium, zirconium, rhenium and hafnium
Elemental metals or any two kinds or arbitrarily two or more alloys；
Or stress equilibrium structure sheaf is in silicon, aluminum, nickel, chromium, platinum, molybdenum, gold, palladium, copper, tungsten, tantalum, niobium, vanadium, zirconium, titanium, rhenium and hafnium
A kind of or any two kinds or arbitrarily two or more with carbon, the compound that generates of nitrogen, silicon or boron；
Or stress equilibrium structure sheaf be resin matrix and conducting particles silver, gold, copper, aluminum, zinc, ferrum, nickel, titanium, molybdenum, palladium, chromium,
One of copper, tungsten and graphite or the conducting polymer of any two kinds or arbitrarily two or more composition；
Or stress equilibrium structure sheaf is conducting particles silver, gold, copper, aluminum, zinc, ferrum, nickel, titanium, molybdenum, palladium, chromium, copper, tungsten and graphite
In the electrocondution slurry that formed of the microgranule of any one and binding agent, solvent or auxiliary agent；
Or stress equilibrium structure sheaf is silicate-base high-temperature electric conduction glue；
Or stress equilibrium structure sheaf is the high temperature alloy slurry that nickel, chromium, silicon and boron are formed.
7. a kind of preparation of the GaN base compound substrate with stress equilibrium structure sheaf according to any one of claim 1-6
Method, for preparing nitrogen polar surface GaN base compound substrate upward, comprises the following steps：
Epitaxial growth GaN base epitaxial film obtains sapphire GaN base compound substrate on a sapphire substrate；
Stress equilibrium structure sheaf is prepared on relevant position；
Prepare bonding medium on the GaN base epitaxial film surface of sapphire GaN base compound substrate and heat-conductivity conducting transfer substrate
Then GaN base epitaxial film and heat-conductivity conducting are shifted substrate by this bonding medium layer and are bonded, realize outside GaN base by layer
Prolong thin film and heat-conductivity conducting and shift being bonded of substrate, the temperature adopting during bonding is 0 DEG C -2000 DEG C, pressure is 20 kgfs/flat
Square inch is to 20 tons/square inch；
Remove Sapphire Substrate, surface clean is carried out to the compound substrate being obtained, obtains with stress equilibrium structure and nitrogen pole
Property face-up GaN base epitaxial film and heat-conductivity conducting shift substrate bonding together with GaN base compound substrate.
8. a kind of preparation of the GaN base compound substrate with stress equilibrium structure sheaf according to any one of claim 1-9
Method, is used for preparing gallium polarity face-up GaN compound substrate, comprises the following steps：
Epitaxial growth GaN base epitaxial film obtains sapphire GaN base compound substrate on a sapphire substrate, will using bonding agent
GaN base epitaxial film is connected on interim transfer substrate, removes former Sapphire Substrate；
Prepare stress equilibrium structure sheaf in relevant position；
GaN base epitaxial film on bonding to interim transfer substrate and heat-conductivity conducting transfer substrate surface are prepared bonding respectively and are situated between
Matter layer, the bonding medium layer then with heat-conductivity conducting, the bonding medium layer on GaN base epitaxial film surface being shifted substrate surface enters
Line unit closes, and realizes GaN base epitaxial film and shifts being bonded of substrate with heat-conductivity conducting, the temperature adopting during bonding is 0 DEG C -2000
DEG C, pressure is 20 kgfs/square inch to 20 tons/square inch；
In bonding process, bonding agent carbonization at high temperature, shift substrate from GaN base epitaxial film surface Automatic-falling temporarily,
Surface clean is carried out to the compound substrate being obtained, obtain with stress equilibrium structure sheaf and the face-up GaN base of gallium polarity outside
Prolong thin film and shift the GaN base compound substrate together with substrate bonding with heat-conductivity conducting.
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