CN204577454U - A kind of GaN base compound substrate containing diffusion impervious layer - Google Patents
A kind of GaN base compound substrate containing diffusion impervious layer Download PDFInfo
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- CN204577454U CN204577454U CN201520264359.XU CN201520264359U CN204577454U CN 204577454 U CN204577454 U CN 204577454U CN 201520264359 U CN201520264359 U CN 201520264359U CN 204577454 U CN204577454 U CN 204577454U
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Abstract
The utility model relates to a kind of GaN base compound substrate containing diffusion impervious layer, comprise [heat-conductivity conducting] translate substrate, be positioned at the diffusion impervious layer in this translate substrate and [heat-conductivity conducting] bonding medium layer on diffusion impervious layer and [after transfer] GaN base epitaxial film.The utility model compound substrate, what the compound substrate taking into account translate substrate technology realization in the past possessed is applicable to GaN homoepitaxy and directly can prepares the advantage of vertical structure LED device, Simplified flowsheet, reduce costs, wherein diffusion impervious layer effectively can suppress substrate-transfer again, backing material in epitaxial chip structure and chip preparing process process, violent chemical reaction and atoms permeating between bonding medium material and GaN base film three, thus avoid bubbling, fold, the generation of micro-crack, reduce foreign atom to the doping of GaN, reduce the leakage current in compound substrate and chip, thus improve the performance of GaN base compound substrate and prepared chip.
Description
Technical field
The utility model relates to semiconductor photoelectronic device technical field, particularly a kind of GaN base compound substrate containing diffusion impervious layer.
Background technology
Broad stopband GaN base semi-conducting material has excellent photoelectric characteristic, be widely used in making light-emitting diode, laser, ultraviolet detector and high temperature, high frequency, high power electronic device, and high-end microelectronic component needed for preparation Aero-Space can be applied to, as high mobility transistor (HEMT) and HFET (HFET), become the study hotspot of international optoelectronic areas.
Because the preparation of GaN body monocrystalline is very difficult, large size single crystal GaN is difficult to direct acquisition, and expensive, and the epitaxial growth of GaN material system is mainly based on the heterogeneous epitaxial technology of large mismatch.At present, what industry was commonly used is in the Sapphire Substrate of the better relative low price of stability, adopt two-step growth method extension GaN material, this heterogeneous epitaxial technology based on resilient coating achieves huge success, wherein blue light, green light LED realizes commercialization, but process for sapphire-based GaN compound substrate has shown larger limitation, problem is mainly reflected in: (1) sapphire is insulating material, related device is caused to realize vertical stratification, homonymy step electrode structure can only be adopted, electric current is that side direction is injected, cause the current unevenness flowing through active layer even, electric current is caused to cluster round effect, reduce stock utilization, add photoetching and etching technics in device preparation simultaneously, remarkable increase cost, (2) sapphire heat conductivility is bad, and 1000 DEG C time, thermal conductivity is about 0.25W/cmK, and heat dissipation problem is given prominence to, and have impact on the electricity of GaN base device, optical characteristics and long-range functional reliability, and limits its application on high temperature and high power device, (3) sapphire hardness is higher, and there is the angle of 30 ° between sapphire lattice and GaN lattice, so not easily cleavage, does not obtain the face, chamber of GaN base device by the method for cleavage.
Silicon substrate has heat-conductivity conducting excellent performance, cost is lower, be easy to realize large scale and the advantage such as integrated, become one of important subject of GaN base LED field in recent years, but lattice mismatch between silicon and GaN and thermal mismatching serious, the technology of growing GaN epitaxial loayer also prematurity on current silicon substrate, compound substrate Dislocations density is higher, even occurs be full of cracks and crackle.Carborundum is the desirable substrate of extension GaN, the lattice mismatch between it and GaN and thermal mismatching less, and possess good heat-conductivity conducting performance, greatly can simplify manufacture craft, but silicon carbide substrates is expensive, and there is the problems such as adhesiveness between epitaxial loayer and substrate, suitability for industrialized production should not be carried out.
Along with going deep into of research, people more and more recognize that homoepitaxy is the optimal selection obtaining high-performance GaN substrate.In view of the high price of GaN single crystalline substrate, some research institution starts to pay close attention to the technology that medium bonding and laser lift-off combine, and GaN epitaxial layer is transferred on the substrate of high heat conductance high conductivity, to eliminate the adverse effect of Sapphire Substrate.But, all pyroprocess is related in substrate-transfer, epitaxial chip structure and chip preparing process process, violent chemical reaction can be produced between translate substrate material, bonding medium material and GaN base epitaxial film three, to melt back be produced to translate substrate and destroy interface, form bubbling, fold and micro-crack, even backspace key is closed, and significantly reduces epitaxial loayer crystal mass.In addition, shift in technical process backing material, bonding medium material and the triangular atoms permeating of GaN base epitaxial film too violent time, also bonding medium layer can be caused to loosen, bond strength declines, and serious doping is formed to GaN base film, leakage current in obvious increase substrate and prepared chip, impact obtain GaN base compound substrate and on prepare the performance of chip.
Summary of the invention
The utility model provides a kind of GaN base compound substrate containing diffusion impervious layer as shown in Figure 1, comprise [heat-conductivity conducting] translate substrate 1, the diffusion impervious layer 2 be positioned in this translate substrate 1, and [heat-conductivity conducting] bonding medium layer on diffusion impervious layer 23 and [after transfer] GaN base epitaxial film 4.The utility model adopts medium bonding and laser lift-off technique to realize GaN base compound substrate, there is the advantage being applicable to GaN homoepitaxy and directly can preparing vertical structure LED device, Simplified flowsheet, reduce costs, wherein use diffusion impervious layer effectively can suppress substrate-transfer again, backing material in epitaxial chip structure and chip preparing process process, violent chemical reaction and atoms permeating between bonding medium material and GaN base film three, thus avoid bubbling, fold, the generation of micro-crack, reduce foreign atom to the doping of GaN, reduce the leakage current in compound substrate and chip, thus improve the performance of GaN base compound substrate and prepared chip.
The thickness of the GaN base epitaxial film 4 after described transfer is 1 micron to 100 microns, is preferably 3 microns to 50 microns; The thickness of described heat-conductivity conducting bonding medium layer 3 is 10 nanometers to 100 micron, is preferably 500 nanometers to 20 micron; The thickness of described diffusion impervious layer 2 is 1 nanometer to 20 micron, is preferably 10 nanometers to 1 micron; The thickness of described heat-conductivity conducting substrate 1 is 10 microns to 3000 microns, is preferably 50 microns to 1000 microns.
Described diffusion impervious layer 2, its material can be Al
2o
3, AlN, ZnO, MgO, SiO
2, La
2o
3, Y
2o
3in one, or a kind of elemental metals in the refractory metal such as W, Ni, Pt, Mo or the alloy of more than one metals.
Described diffusion impervious layer 2, it can be single or multiple lift structure, its position can between translate substrate 1 and bonding medium layer 3, or between bonding medium layer 3 and GaN base epitaxial film 4, or there is diffusion impervious layer described both sides, or in bonding medium layer, contain layer of material as diffusion impervious layer above.
Described diffusion impervious layer 2, available multiple distinct methods preparation, as ald, molecular beam epitaxy, Metalorganic chemical vapor deposition etc., also comprises the aftertreatment technologys such as the annealing in process after deposit diffusion barriers.
Described [heat-conductivity conducting] bonding medium layer 3 and [heat-conductivity conducting] translate substrate 1, all require to have following characteristic: (1) is high temperature resistant, fusing point more than 1000 DEG C, and at said high temperatures without violent diffusion phenomena; (2) heat-conductivity conducting performance is possessed.
Described [heat-conductivity conducting] bonding medium layer 3, its material melting point is higher than 1000 DEG C and have heat-conductivity conducting performance, molybdenum (Mo) can be selected, titanium (Ti), palladium (Pd), gold (Au), copper (Cu), tungsten (W), nickel (Ni), a kind of elemental metals in chromium (Cr) or the alloy of more than one metals, or resin matrix and conducting particles silver (Ag), gold (Au), copper (Cu), aluminium (Al), zinc (Zn), iron (Fe), nickel (Ni), the conducting polymer that one or more elements in graphite (C) are formed, or one or more conducting particless above particulate and adhesive, solvent, the electrocondution slurry that auxiliary agent forms, or silicate-base high-temperature electric conduction glue (HSQ), or nickel (Ni), chromium (Cr), silicon (Si), the high temperature alloy slurry that the metals such as boron (B) are formed,
Described [heat-conductivity conducting] bonding medium layer 3 can be single or multiple lift structure, and magnetron sputtering or vacuum thermal evaporation or wet processing can be utilized to prepare.
Described [heat-conductivity conducting] translate substrate 1, its material melting point is higher than 1000 DEG C and have heat-conductivity conducting performance, the alloy of a kind of elemental metals in molybdenum (Mo), titanium (Ti), palladium (Pd), copper (Cu), tungsten (W), nickel (Ni), chromium (Cr) or more than one metals can be selected, or silicon (Si) crystal, carborundum (SiC) crystal or AlSi crystal.
Described GaN base epitaxial film 4, can be GaN film, AlN film, InN film or wherein the two, the alloy firm of three.
Between described [heat-conductivity conducting] translate substrate 1 and GaN base epitaxial film 4, it is the diffusion by [heat-conductivity conducting] bonding medium layer 3, will the front of [before transfer] GaN base epitaxial film 41 and [heat-conductivity conducting] translate substrate 1, carry out tight bonding; Its diffusion interlinked condition is: temperature >=0 DEG C, pressure 100 kgf/square inch to 4 ton/square inch.
A kind of GaN base compound substrate containing diffusion impervious layer of the utility model, compared with the GaN base compound substrate realized, has the advantage of many uniquenesses with relatively traditional substrate transfer technology:
1) diffusion impervious layer can effectively reduce in substrate-transfer, epitaxial chip structure and chip preparing process process the chemical reaction shifted between backing material, bonding medium layer material and GaN base epitaxial film three, avoid producing melt back to substrate and destroying interface, thus suppress the generation of bubbling, fold and micro-crack, improve bond strength, ensure GaN epitaxial layer crystal mass after whole technological process.
2) diffusion impervious layer can suppress the atoms permeating that shifts in substrate-transfer, epitaxial chip structure and chip preparing process process between backing material, bonding medium layer material and GaN base epitaxial film three, the bonding medium layer avoiding too violent diffusion phenomena to cause loosens, improve bond strength, and the foreign atom reduced from translate substrate and bonding medium layer is to the doping of GaN, thus the leakage current reduced in compound substrate and chip, final raising GaN compound substrate and prepared chip performance.
3) by selecting diffusion barrier material, the lattice mismatch between translate substrate and GaN and thermal mismatching can be alleviated, namely alleviating the stress in film simultaneously to a certain extent.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of GaN base compound substrate containing diffusion impervious layer of the utility model;
Fig. 2 (a), 2 (b), 2 (c) are that embodiment 1. uses Ni/Cr/Ni as bonding medium layer, and AlN, as diffusion impervious layer, prepares the schematic flow sheet of the substrate GaN-based compound substrate of Si;
Fig. 3 is that embodiment 2. uses conduction Ag glue as bonding medium layer, W (tungsten) as diffusion impervious layer, the substrate GaN-based composite substrate structure schematic diagram of MoCu of preparation.
Description of reference numerals:
1:[heat-conductivity conducting] translate substrate; 2: diffusion impervious layer; 3:[heat-conductivity conducting] bonding medium layer; After 4:[transfer] GaN base epitaxial film; 11:Si substrate; 21:AlN diffusion impervious layer; 31:Ni/Cr/Ni bonding medium layer; Before 41:[transfer] GaN base epitaxial film; 5: Sapphire Substrate; 12:MoCu substrate; 22:W diffusion impervious layer; 32: conduction Ag glue bonding medium layer.
Embodiment
Below with reference to accompanying drawing of the present utility model, describe a kind of GaN base compound substrate containing diffusion impervious layer in detail.First should illustrate, those skilled in the art, according to basic thought of the present utility model, can make various amendment or improvement, only otherwise depart from basic thought of the present utility model, all within scope of the present utility model.
Embodiment 1: use Ni/Cr/Ni as bonding medium layer, AlN is as diffusion impervious layer, and prepare the substrate GaN-based compound substrate of Si, its preparation process is as follows:
(1) at Sapphire Substrate 5 Epitaxial growth GaN single crystalline layer: in the dull and stereotyped Sapphire Substrate of 2 inch of 430 micron thickness, first use the GaN single crystalline layer of MOCVD technology epitaxial growth 4 micron thickness, then growth adds thick gan layer thickness to 15 micron in HVPE;
(2) on Si substrate 11 surface of 300 microns, use MOCVD technology epitaxial growth 20 nano-aluminum nitride as diffusion impervious layer 21; On [before transfer] GaN epitaxial film 41 surface of process for sapphire-based, magnetron sputtering is used to deposit the Ni of the Ni of 100 nanometers, the Cr of 1 micron and 100 nanometers successively, as Ni/Pd/Ni bonding medium layer 31, as shown in Fig. 2 (a);
(3) then temperature 900 DEG C, under 3Torr pressure, carry out 30 minutes bondings, realize the tight bonding of [before transfer] GaN epitaxial film 41 and Si substrate 11, as shown in Fig. 2 (b);
(4) laser lift-off technique is adopted, while removing Sapphire Substrate 5, will [before transfer] GaN base epitaxial film 41, transfer to Si substrate 11 from Sapphire Substrate 5, obtain [after transfer] GaN base epitaxial film 4.To obtained compound substrate surface, carry out surface clean with hydrochloric acid, acetone etc., then obtain the GaN/Ni/Cr/Ni/AlN/Si compound substrate that displaced, as shown in Fig. 2 (c).
(5) this compound substrate of gained, comprise the AlN diffusion impervious layer 21 of Si substrate 11,20 nanometer thickness of one deck 300 micron thickness, Ni/Cr/Ni bonding medium layer 31,15 micron thickness that its thickness is adjustable [after transfer] GaN base epitaxial film 4, four tightening keys are combined, and finally obtain the Si base GaN compound substrate of AlN as diffusion impervious layer.
Embodiment 2: use conduction Ag glue as bonding medium layer, W (tungsten) is as diffusion impervious layer, and prepare the substrate GaN-based compound substrate of MoCu, its preparation process is as follows:
(1) at Sapphire Substrate 5 Epitaxial growth GaN single crystalline layer: in the dull and stereotyped Sapphire Substrate of 2 inch of 430 micron thickness, first use the GaN single crystalline layer of MOCVD technology epitaxial growth 4 micron thickness, then growth adds thick gan layer thickness to 15 micron in HVPE;
(2) on MoCu substrate 12 surface of 200 microns, spin coating proceeding is used to prepare the conduction Ag glue of 1 micron as bonding medium layer 32; On [before transfer] GaN epitaxial film 41 surface of process for sapphire-based, magnetron sputtering 200 nanometer W is as diffusion impervious layer 22;
(3) then temperature 1000 DEG C, under 4Torr pressure, carry out 30 minutes bondings, realize the tight bonding of [before transfer] GaN base epitaxial film 41 and MoCu substrate 12;
(4) laser lift-off technique is adopted, while removing Sapphire Substrate 5, will [before transfer] GaN base epitaxial film 41, transfer to above MoCu substrate 12 from Sapphire Substrate 5, obtain [after transfer] GaN base epitaxial film 4.Surface clean is carried out to obtained compound substrate surface hydrochloric acid, acetone etc., then obtain [after transfer] GaN/W/ conduction Ag glue/MoCu compound substrate.
(5) this compound substrate of gained, comprise the W diffusion impervious layer 22 of MoCu substrate 12,200 nanometer thickness of one deck 200 micron thickness, and adjustable conduction Ag glue bonding medium layer 32,15 micron thickness of thickness [after transfer] GaN base epitaxial film 4, four tightening keys are combined, finally obtain the MoCu base GaN compound substrate of W as diffusion impervious layer, as shown in Figure 3.
Claims (3)
1. the GaN base compound substrate containing diffusion impervious layer, is characterized in that, comprising: heat-conductivity conducting translate substrate (1); Be positioned at the diffusion impervious layer (2) in translate substrate (1); And the GaN base epitaxial film (4) after heat-conductivity conducting bonding medium layer (3) on diffusion impervious layer (2) and transfer.
2. a kind of GaN base compound substrate containing diffusion impervious layer according to claim 1, is characterized in that, described heat-conductivity conducting translate substrate (1) and bonding medium layer (3), and its fusing point is higher than 1000 DEG C and have heat-conductivity conducting performance.
3. a kind of GaN base compound substrate containing diffusion impervious layer according to claim 1, it is characterized in that, the thickness of the GaN base epitaxial film (4) after described transfer is 1 micron to 100 microns, is preferably 3 microns to 50 microns; The thickness of described heat-conductivity conducting bonding medium layer (3) is 10 nanometers to 100 micron, is preferably 500 nanometers to 20 micron; The thickness of described diffusion impervious layer (2) is 1 nanometer to 20 micron, is preferably 10 nanometers to 1 micron; The thickness of described translate substrate (1) is 10 microns to 3000 microns, is preferably 50 microns to 1000 microns.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298456A (en) * | 2016-09-19 | 2017-01-04 | 成都海威华芯科技有限公司 | The substrate transfer method of vertical stratification power semiconductor |
| CN106449912A (en) * | 2016-11-28 | 2017-02-22 | 东莞市中镓半导体科技有限公司 | GaN-based composite substrate with stress balance structural layer and method for preparing GaN-based composite substrate |
| CN106611809A (en) * | 2017-01-11 | 2017-05-03 | 东莞市中镓半导体科技有限公司 | Preparing method for GaN growth composite substrate with isolation protection layer |
| CN111900200A (en) * | 2020-06-24 | 2020-11-06 | 西安交通大学 | Diamond-based gallium nitride composite wafer and bonding preparation method thereof |
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2015
- 2015-04-28 CN CN201520264359.XU patent/CN204577454U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298456A (en) * | 2016-09-19 | 2017-01-04 | 成都海威华芯科技有限公司 | The substrate transfer method of vertical stratification power semiconductor |
| CN106449912A (en) * | 2016-11-28 | 2017-02-22 | 东莞市中镓半导体科技有限公司 | GaN-based composite substrate with stress balance structural layer and method for preparing GaN-based composite substrate |
| CN106611809A (en) * | 2017-01-11 | 2017-05-03 | 东莞市中镓半导体科技有限公司 | Preparing method for GaN growth composite substrate with isolation protection layer |
| CN111900200A (en) * | 2020-06-24 | 2020-11-06 | 西安交通大学 | Diamond-based gallium nitride composite wafer and bonding preparation method thereof |
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Effective date of registration: 20210105 Address after: No.4, Gongye North 2nd Road, Songshanhu high tech Industrial Development Zone, Dongguan, Guangdong 523000 Patentee after: Guangdong Zhongtu Semiconductor Technology Co., Ltd Address before: 523518 Science and Technology Industrial Park of Qishi Town, Dongguan City, Guangdong Province Patentee before: Sino Nitride Semiconductor Co.,Ltd. |