CN104538303A - Method for manufacturing gallium-nitride-based high-electronic-mobility transistor of transferring substrate - Google Patents
Method for manufacturing gallium-nitride-based high-electronic-mobility transistor of transferring substrate Download PDFInfo
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- CN104538303A CN104538303A CN201410816561.9A CN201410816561A CN104538303A CN 104538303 A CN104538303 A CN 104538303A CN 201410816561 A CN201410816561 A CN 201410816561A CN 104538303 A CN104538303 A CN 104538303A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 title claims abstract description 93
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 24
- 239000010949 copper Substances 0.000 claims abstract description 24
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000004888 barrier function Effects 0.000 claims abstract description 6
- 238000009713 electroplating Methods 0.000 claims abstract description 6
- 238000012546 transfer Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 24
- 229910017083 AlN Inorganic materials 0.000 claims description 23
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 23
- 229910052594 sapphire Inorganic materials 0.000 claims description 20
- 239000010980 sapphire Substances 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 230000006911 nucleation Effects 0.000 claims description 5
- 238000010899 nucleation Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 230000008901 benefit Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000035800 maturation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
A method for manufacturing a gallium-nitride-based high-electronic-mobility transistor of a transferring substrate comprises the steps that a low-temperature nucleating layer, a gallium nitride high-resistance layer, a high-mobility gallium nitride layer, an aluminum nitride inserting layer, an aluminum gallium nitrogen barrier layer and a gallium nitride cap layer sequentially grow on the substrate; a first conducting substrate made of silicon or copper or aluminum nitride is prepared on the surface of the gallium nitride cap layer; the substrate is separated from the low-temperature nucleating layer; the surface of the gallium nitride high-resistance layer is ground and flattened; a second conducting substrate made of silicon or copper or aluminum nitride is prepared on the surface of the gallium nitride high-resistance layer, and the gallium-nitride-based high-electronic-mobility transistor is transferred to the second conducting substrate made of silicon or copper or aluminum nitride; the first conducting substrate on the gallium nitride cap layer is removed through thermal compression bonding or electroplating; source and drain Ohm contact electrodes are manufactured at the two sides of the upper face of the gallium nitride cap layer; a Schottky contact electrode of a grid electrode is manufactured in the middle of the upper face of the gallium nitride cap layer, and preparing is finished.
Description
Technical field
The present invention relates to technical field of semiconductors, refer to the method that the GaN base transistor with high electronic transfer rate of translate substrate makes especially.The method adopts the method for laser lift-off, extension on a sapphire substrate GaN base transistor with high electronic transfer rate and Sapphire Substrate peel off, the method such as High Electron Mobility Transistor bonding, plating after peeling off is transferred on the excellent substrate of the conductions such as silicon, copper, aluminium nitride, heat conductivility simultaneously.
Background technology
The main devices type of microwave transistor has homojunction bipolar transistor (BJT), heterojunction bipolar transistor (HBT), metal-semiconductor field effect transistor (MESFET), mos field effect transistor (MOSFET) and High Electron Mobility Transistor (HEMT) etc.
The energy gap large (Eg=3.4eV) of GaN material, critical breakdown strength (3.3MV/cm) is comparatively large, makes electronic device and has feature that is high temperature resistant, high pressure; Its electronics saturation drift velocity reaches 2.5 × 107cm/s, is suitable for making high-frequency electron device; In the heterostructure that it and AlGaN material are formed can forming surface density up to 10
13cm
-2above two-dimensional electron gas (2DEG), and interface electron mobility is close to 2000cm
2/ Vs, meets the power device requirement worked under current state completely; And its thermal conductivity > 1.3W/cmK, the more for the benefit of heat radiation of power device.GaN material prepares the preferred material of high frequency, high power microwave transistor.
Because GaN lacks homo-substrate, GaN material mainly adopts heteroepitaxy method to grow.The most frequently used substrate of current growing GaN base device material is sapphire, Si and SiC.Sapphire Substrate is the substrate being widely used in epitaxial nitride gallium based material at present most, is optimum result between the crystal mass and production cost of material.The thermal conductivity (0.5W/cmK) that sapphire is extremely low limits the heat radiation of device, thus constrains the power output of device and the Stability and dependability of devices function.Although SiC has excellent thermal conductivity (4.49W/cmK), its cost is very expensive, and substrate dimension is also not fully up to expectations.Si substrate heteroepitaxial growth GaN material is adopted to have the following advantages: (1) is cheap.The market price of current 2 inches of Si sheets is only sapphire 1/3rd, compares SiC cheap especially.(2) substrate of large-area high-quality is easily obtained.(3) compared with Sapphire Substrate, Si substrate has superior heat dispersion, its thermal conductivity and GaN close, work under high temperature, high frequency condition and will show more superiority.(4) Si base GaN microelectronic component can be made on same wafer with the Si device of maturation, realizes device integrated.Ripe Si device technology can be stable carry out the steps such as thinning, upside-down mounting, encapsulation, improve the reliability of devices function simultaneously.(5) compare with SiC substrate with sapphire, the processing technology such as thinning, cutting, cleavage of Si substrate is simple, can greatly reduce device cost of manufacture.(6) relative to sapphire insulating properties, Si then easily obtains N-shaped or the p-type material of different resistance values.Adopt the GaN base device of low-resistance Si substrate development can make heteropleural electrode device, reduce process complexity, and add the quantity making tube core.
Although epitaxial growth GaN material on a si substrate has above-mentioned many advantages, but owing to having larger lattice mismatch and thermal expansion coefficient difference between Si substrate and GaN, Si base GaN heteroepitaxial growth is than much more difficult on sapphire and SiC substrate: the topmost problem of Si substrate Epitaxial growth GaN is the crack problem that stress causes.In temperature-fall period after high growth temperature, because coefficient of thermal expansion mismatch (56%) high between Si substrate and GaN epitaxial layer can cause GaN film to be subject to very large tensile stress, this is the main cause that crackle produces.Lattice mismatch (17%) in addition between GaN and Si makes GaN epitaxial layer in growth course, bear very large tensile stress, and crackle can be caused equally to produce.Cannot making devices in the GaN material of high crack density.Next is crystal mass problem.Excessive lattice mismatch not only can make GaN epitaxial layer be in tensile strain state, and causes producing a large amount of misfit dislocation in GaN layer, and its density is up to 10
10cm
-2the order of magnitude, has had a strong impact on the crystal mass of GaN material, thus the raising of limiting device performance.In addition, in substrate, the diffusion of Si atom is also a major issue.Comparatively sapphire is poor for the thermal stability of Si substrate, and in higher temperature growth processes, the diffusion aggravation of Si atom, makes in GaN epitaxial layer containing a certain amount of Si atom.These Si atoms can form Si with the ammonia gas react in growth room
xn
ynoncrystal membrane, affects the crystal mass of GaN epitaxial layer.Meanwhile, the Si atom generation melt back corrosion reaction of Ga atom and substrate surface, makes material interface become coarse, also can reduce the crystal mass of GaN.
Summary of the invention
A kind of method that the object of patent of the present invention is to provide GaN base transistor with high electronic transfer rate of translate substrate to make, extension GaN base transistor with high electronic transfer rate device is on a sapphire substrate separated GaN base transistor with high electronic transfer rate by the way of laser lift-off with non-conductive, that heat conductivility is poor Sapphire Substrate, and GaN base transistor with high electronic transfer rate is transferred on the substrates such as silicon, copper, aluminium nitride ceramics by thermocompression bonding or electric plating method.The method the high-quality GaN base transistor with high electronic transfer rate of extension in Sapphire Substrate with conduction, be easy to integrated with current si-substrate integrated circuit, the substrate such as silicon, copper, aluminium nitride ceramics of good heat conductivity combines.Can on the basis of high-quality GaN base transistor with high electronic transfer rate epitaxial material, in conjunction with substrate perfect heat-dissipatings such as silicon, copper, aluminium nitride ceramicss, be easy to be made on same wafer with the silicon integrated circuit device of maturation, realize the advantages such as device is integrated and combine.
The invention provides a kind of manufacture method of GaN base transistor with high electronic transfer rate of translate substrate, comprise the steps:
Step 1: growing low temperature nucleating layer, gallium nitride resistive formation, high mobility gallium nitride layer, aln inserting layer, aluminum gallium nitride barrier layer and gallium nitride cap layers successively on substrate, forms GaN base transistor with high electronic transfer rate;
Step 2: the first conductive substrates being prepared silicon, copper or aluminium nitride by thermocompression bonding or plating on the surface of gallium nitride cap layers;
Step 3: by laser lift-off, is separated substrate with low temperature nucleation layer;
Step 4: by the method for Mechanical polishing, will with substrate separation after, the surperficial grinding and polishing of the gallium nitride resistive formation of exposure is smooth;
Step 5: the second conductive substrates being prepared silicon, copper, aluminium nitride by thermocompression bonding or electroplating technology on the surface of gallium nitride resistive formation, transfers in the second conductive substrates of silicon, copper, aluminium nitride by GaN base transistor with high electronic transfer rate;
Step 6: by the method for Mechanical polishing or chemical corrosion, by thermocompression bonding or plating the first conductive substrates in gallium nitride cap layers get rid of;
Step 7: the making source, both sides on gallium nitride cap layers, the Ohm contact electrode of leakage;
Step 8: the Schottky contact electrode of the intermediate fabrication grid on gallium nitride cap layers completes preparation.
The invention has the beneficial effects as follows, its can the high-quality GaN base transistor with high electronic transfer rate of extension in Sapphire Substrate with conduction, be easy to integrated with current si-substrate integrated circuit, the substrate such as silicon, copper, aluminium nitride ceramics of good heat conductivity combines.Can on the basis of high-quality GaN base transistor with high electronic transfer rate epitaxial material, in conjunction with substrate perfect heat-dissipatings such as silicon, copper, aluminium nitride ceramicss, be easy to be made on same wafer with the silicon integrated circuit device of maturation, realizing the advantages such as device is integrated to combine, is the effective ways of preparation high-performance GaN base transistor with high electronic transfer rate.
Accompanying drawing explanation
For further illustrating content of the present invention, below in conjunction with embodiment, a detailed description is done to the present invention, wherein:
Fig. 1 is method flow diagram of the present invention;
Fig. 2 is extension GaN base transistor with high electronic transfer rate on a sapphire substrate;
Fig. 3 prepares the transfer transition substrates such as silicon, copper, aluminium nitride by thermocompression bonding or plating on the surface of gallium nitride cap layers;
Fig. 4 is by laser lift-off, Sapphire Substrate is separated with gallium nitride resistive formation.And by the method for Mechanical polishing, by smooth for the surperficial grinding and polishing of the gallium nitride resistive formation be separated with Sapphire Substrate;
Fig. 5 prepares the translate substrate such as silicon, copper, aluminium nitride by thermocompression bonding or plating on the surface of gallium nitride resistive formation, is transferred to by GaN base transistor with high electronic transfer rate in the translate substrate such as silicon, copper, aluminium nitride;
Fig. 6 is the way by Mechanical polishing or chemical corrosion, and the transfer such as silicon, copper, the aluminium nitride transition substrate prepared on the surface of gallium nitride cap layers by thermocompression bonding or plating is got rid of.Leave the GaN base transistor with high electronic transfer rate in the translate substrate such as silicon, copper, aluminium nitride prepared on the surface of gallium nitride resistive formation by thermocompression bonding or plating;
Fig. 7 is the Ohm contact electrode of making source, surface in gallium nitride cap layers, leakage; The Schottky contact electrode of grid is made on the surface of gallium nitride cap layers.
Embodiment
Refer to Fig. 1, and combination is consulted shown in Fig. 2 Fig. 7, the invention provides a kind of manufacture method of GaN base transistor with high electronic transfer rate of translate substrate, comprises the steps:
Step 1: growing low temperature nucleating layer 20, gallium nitride resistive formation 30, high mobility gallium nitride layer 40, aln inserting layer 50, aluminum gallium nitride barrier layer 60 and gallium nitride cap layers 70 (consulting Fig. 2) successively over the substrate 10, form GaN base transistor with high electronic transfer rate, the material of described substrate 10 is sapphire, the material of described low temperature nucleation layer 20 is gallium nitride, aluminium nitride or aluminum gallium nitride, thickness is 20-100nm, and epitaxially grown temperature is between 500 DEG C-700 DEG C.The thickness of described gallium nitride resistive formation 30 is 500-5000nm, and epitaxially grown temperature is between 900 DEG C-1050 DEG C.The thickness of described high mobility gallium nitride layer 40 is 10-300nm, and epitaxially grown temperature is between 1000 DEG C-1100 DEG C.The thickness of described aln inserting layer 50 is 0-5nm, and epitaxially grown temperature is between 1000 DEG C-1100 DEG C.The thickness of described aluminum gallium nitride barrier layer 60 is 15-30nm, and the thickness of described gallium nitride cap layers 70 is 1-10nm, and epitaxially grown temperature is between 1000 DEG C-1100 DEG C;
Step 2: the first conductive substrates 80 (consulting Fig. 3) being prepared silicon, copper or aluminium nitride by thermocompression bonding or plating on the surface of gallium nitride cap layers 70, as the substrate of transfer transition, its thickness is 100-500 μm;
Step 3: by laser lift-off, is separated substrate 10 with low temperature nucleation layer 20 (consulting Fig. 4), thus the gallium nitride layer 30 of high resistant is come out;
Step 4: by the method for Mechanical polishing, by smooth for the surperficial grinding and polishing of the gallium nitride resistive formation 30 be separated with substrate 10 (consulting Fig. 4), is conducive to thermocompression bonding or the electroplating technology of subsequent transfer substrate;
Step 5: the second conductive substrates 90 being prepared silicon, copper, aluminium nitride by thermocompression bonding or electroplating technology on the surface of the smooth gallium nitride resistive formation 30 of grinding and polishing, in the second conductive substrates 90 GaN base transistor with high electronic transfer rate being transferred to silicon, copper, aluminium nitride (consulting Fig. 5), its thickness is 100-500 μm;
Step 6: by the method for Mechanical polishing or chemical corrosion, get rid of (consulting Fig. 6) by thermocompression bonding or first conductive substrates 80 of electroplating in gallium nitride cap layers 70, leave the GaN base transistor with high electronic transfer rate in the translate substrate 90 such as silicon, copper, aluminium nitride.Through twice translate substrate, GaN high electron mobility transistor is transferred in the translate substrate 90 of excellent thermal conductivity;
Step 7: the making source, both sides on gallium nitride cap layers 70, the Ohm contact electrode 11,12 (consulting Fig. 7) of leakage, the material of the Ohm contact electrode 11,12 of described source, leakage is Ti/Al/Ti/Au.This Ohm contact electrode 11,12 is through the high temperature anneal of 700 DEG C to 900 DEG C;
Step 8: the Schottky contact electrode 13 (consulting Fig. 7) of the intermediate fabrication grid on gallium nitride cap layers 70, the material of the Schottky contact electrode 13 of described grid is Ni/Au.This Schottky contact electrode 13 is through the high temperature anneal of 700 DEG C to 900 DEG C
This patent is for GaN base transistor with high electronic transfer rate, but be not only confined to GaN base transistor with high electronic transfer rate, be equally applicable to the power electronic device such as homojunction bipolar transistor (BJT), heterojunction bipolar transistor (HBT), metal-semiconductor field effect transistor (MESFET), mos field effect transistor (MOSFET) and High Electron Mobility Transistor (HEMT).
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a manufacture method for the GaN base transistor with high electronic transfer rate of translate substrate, comprises the steps:
Step 1: growing low temperature nucleating layer, gallium nitride resistive formation, high mobility gallium nitride layer, aln inserting layer, aluminum gallium nitride barrier layer and gallium nitride cap layers successively on substrate, forms GaN base transistor with high electronic transfer rate;
Step 2: the first conductive substrates being prepared silicon, copper or aluminium nitride by thermocompression bonding or plating on the surface of gallium nitride cap layers;
Step 3: by laser lift-off, is separated substrate with low temperature nucleation layer;
Step 4: by the method for Mechanical polishing, will with substrate separation after, the surperficial grinding and polishing of the gallium nitride resistive formation of exposure is smooth;
Step 5: the second conductive substrates being prepared silicon, copper, aluminium nitride by thermocompression bonding or electroplating technology on the surface of gallium nitride resistive formation, transfers in the second conductive substrates of silicon, copper, aluminium nitride by GaN base transistor with high electronic transfer rate;
Step 6: by the method for Mechanical polishing or chemical corrosion, by thermocompression bonding or plating the first conductive substrates in gallium nitride cap layers get rid of;
Step 7: the making source, both sides on gallium nitride cap layers, the Ohm contact electrode of leakage;
Step 8: the Schottky contact electrode of the intermediate fabrication grid on gallium nitride cap layers completes preparation.
2. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, the material of wherein said substrate is sapphire.
3. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, the material of wherein said low temperature nucleation layer is gallium nitride, aluminium nitride or aluminum gallium nitride, and thickness is 20-100nm.
4. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, the thickness of wherein said gallium nitride resistive formation is 500-5000nm.
5. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, the thickness of wherein said high mobility gallium nitride layer is 10-300nm.
6. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, the thickness of wherein said aln inserting layer is 0-5nm.
7. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, the thickness of wherein said aluminum gallium nitride barrier layer is 15-30nm.
8. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, the thickness of wherein said gallium nitride cap layers is 1-10nm.
9. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, the material of the Ohm contact electrode of Qi Zhongyuan, leakage is Ti/Al/Ti/Au.
10. the manufacture method of the GaN base transistor with high electronic transfer rate of translate substrate according to claim 1, wherein the material of the Schottky contact electrode of grid is Ni/Au.
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| CN106298456A (en) * | 2016-09-19 | 2017-01-04 | 成都海威华芯科技有限公司 | The substrate transfer method of vertical stratification power semiconductor |
| CN106711194A (en) * | 2016-12-28 | 2017-05-24 | 中国科学院微电子研究所 | Ring gate field effect transistor and preparation method thereof |
| CN113555330A (en) * | 2021-06-04 | 2021-10-26 | 西安电子科技大学 | Gallium nitride material structure with back through hole for enhancing heat dissipation and preparation method thereof |
| CN114023825A (en) * | 2021-10-24 | 2022-02-08 | 南京中电芯谷高频器件产业技术研究院有限公司 | High-power amplitude limiter and preparation method thereof |
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| CN106711194B (en) * | 2016-12-28 | 2019-08-20 | 中国科学院微电子研究所 | A kind of ring grid field effect transistor and preparation method thereof |
| CN113555330A (en) * | 2021-06-04 | 2021-10-26 | 西安电子科技大学 | Gallium nitride material structure with back through hole for enhancing heat dissipation and preparation method thereof |
| CN114023825A (en) * | 2021-10-24 | 2022-02-08 | 南京中电芯谷高频器件产业技术研究院有限公司 | High-power amplitude limiter and preparation method thereof |
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