CN105374869B - AlGaN/GaN heterojunction devices with gate medium in situ and preparation method thereof - Google Patents
AlGaN/GaN heterojunction devices with gate medium in situ and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of AlGaN/GaN heterojunction devices and its manufacturing method with gate medium in situ.The device includes AlGaN/GaN heterojunction structures and source formed on substrate, leakage and grid, and also original position epitaxial growth has BN films or BAlN films as gate medium on the heterojunction structure.The manufacturing method is included in the operation that Grown forms AlGaN/GaN heterojunction structures, and the heterojunction structure is placed in epitaxial growth equipment, and nitrogen source and boron source and the silicon source as optional raw material are inputted, so as to which growth in situ forms the operation of BN films or BAlN films as gate medium on the heterojunction structure.The present invention is in the case that undamaged to device architecture, it can be delayed outside device material and form high quality BN or BAlN gate medium, the gate medium has high dielectric constant, big energy gap, the performance of the semi-conductor electronic device with GaN/AlGaN dielectric structures can be improved using this gate medium, gate leak current is reduced, inhibits current collapse effect and hysteresis phenomenon, improves the overall performance of device.
Description
Technical field
The present invention relates to Group III nitride semiconductor devices, especially have the AlGaN/GaN hetero-junctions of gate medium in situ
Device and preparation method thereof belongs to field of semiconductor.
Technical background
Since six the seventies of twentieth century, Group III-V compound semiconductor electronic device becomes the weight of people's research
Point, since finding to realize the extension of p-type GaN material using Mg doping particularly to the nineties, even more GaN broad stopbands
Brand-new conceptual phase has been pushed in the research of semi-conducting material and device to, remains international to current GaN associated materials and device
On research hotspot.The energy gap of GaN body materials is two that 3.4eV, disruptive field intensity 3.3MV/cm, with AlGaN are formed
Dimensional electron gas mobility is more than 2000cm2/ V s, carrier face concentration can reach 1.0E1013cm-2, thus with AlGaN/GaN
The semiconductor devices of heterojunction structure is more suitable for the application in terms of high-frequency high-power.
First GaN HEMT devices birth in the world in 1993, GaN HEMT in 1996 have obtained microwave power spy for the first time
Property, subsequent output power improves 32.2W/mm@4GHz and 30.6W/mm@8GHz with initial 1.1W/mm@2GHz, to 2011
The device cutoff frequency that year is reported is that 343GHz and W-waveband output power density have reached 1.7W/mm 95GHz.
Although AlGaN/GaN heterojunction devices have such superior performance, it still has problems, as electric current collapses
Phenomenon of collapsing seriously restricts device performance performance, is generally passivated in technique using dielectric layer inhibits current collapse at present, but band
The problem of coming is that the leakage current after being passivated in device gate increases.In order to reduce the leakage current in device gate, reduce interfacial state,
Improve breakdown voltage, it is therefore necessary to introduce interface state under device gate, insulated gate is made in the dielectric layer of high breakdown field strength
Medium.
The using plasmas such as K.han in 2000 enhancing chemical vapor deposition (PECVD) method is prepared for AlGaN/GaN
The SiO of HEMT2Insulated gate, the same year Hu et al. equally uses PECVD deposit silicon nitrides (SiNx) insulated gate make AlGaN/GaN
HEMT has also obtained good device performance.Ye in 2005 et al. is being grown using atomic layer deposition technology by MOCVD
One layer of Al is deposited on AlGaN/GaN heterojunction materials2O3Dielectric layer, then anneal 60s under 600 DEG C, oxygen atmosphere again, forms grid
Dielectric layer enhances device property.
SiO is whether used at present2Or SiNxOr Al2O3The grid that can serve as AlGaN/GaN heterojunction devices are situated between
Matter passivation layer, and show some superior functions, but the shortcomings that have its own due to each method and deficiency, for example grow this
A little dielectric layers generally need to take out AlGaN/GaN heterojunction materials from epitaxial device reative cell, then with PECVD or
The equipment such as ALD are grown, this results in material interface aoxidize, stain, interfacial state increase, so as to the leakage in device gate after being passivated
Electric current increases.
Invention content
In view of the deficiencies of the prior art, the object of the present invention is to provide a kind of AlGaN/GaN with gate medium in situ is different
Matter junction device and preparation method thereof.
In order to achieve the above object, present invention employs technical solutions as described below：
A kind of AlGaN/GaN heterojunction devices with gate medium in situ, it is different including AlGaN/GaN formed on substrate
Matter structure and source electrode, drain and gate, wherein, also original position epitaxial growth has as grid Jie on the AlGaN/GaN heterojunction structures
The BN films of matter or BAlN films.
A kind of manufacturing method of the AlGaN/GaN heterojunction devices with gate medium in situ, is included in Grown shape
Into the operation of AlGaN/GaN heterojunction structures, and further include following operation：By AlGaN/GaN heterojunction structures merging extension life
Long equipment, and inputted in epitaxial growth equipment through carrier gas using nitrogen source and boron source and as the silicon source of optional raw material, so as in institute
It states growth on AlGaN/GaN heterojunction structures and is formed and be used as the BN films of gate medium or BAlN films.
Compared with the prior art, advantages of the present invention includes：Provide a kind of device with high quality gate medium and formation
The method of the high quality gate medium, and Group III nitride semiconductor device structure is not damaged, it can be effectively in device
BN BAlN film gate mediums are formed during material epitaxy, which has high dielectric constant, and big energy gap utilizes
This gate medium can improve the performance of the semi-conductor electronic device with GaN/AlGaN dielectric structures, reduce gate leak current, inhibit
Current collapse effect and hysteresis phenomenon improve the overall performance of device.
Description of the drawings
Fig. 1 is a kind of structure diagram of AlGaN/GaN heterojunction semiconductor devices in an exemplary embodiments of the invention；
Fig. 2 is a kind of AlGaN/GaN heterojunction semiconductor devices preparation technology flow chart in an exemplary embodiments of the invention.
Specific embodiment
One aspect of the present invention provides a kind of AlGaN/GaN heterojunction devices with gate medium in situ, including shape
Into in AlGaN/GaN heterojunction structures and source electrode, drain and gate on substrate, wherein, on the AlGaN/GaN heterojunction structures also
Epitaxial growth in situ has BN films or BAlN films as gate medium.
Further, the AlGaN/GaN heterojunction structures include being sequentially formed in along direction initialization buffer layer on substrate,
High resistant GaN layer, non-impurity-doped GaN layer, AlGaN layer and GaN cap, in the GaN cap epitaxial growth in situ have BN films
Or BAlN films.
In a more specific case study on implementation, it is 300 μm~1500 μm that the substrate, which can be selected from, but not limited to, thickness,
Si, SiC or Sapphire Substrate.
In a more specific case study on implementation, the buffer layer can be selected from, but not limited to, AlN, AlGaN or AlN/
AlGaN superlattice structures.
In a more specific case study on implementation, the thickness of the high resistant GaN layer is preferably 2~4 μm.
In a more specific case study on implementation, the electron mobility in the non-impurity-doped GaN layer is preferably greater than 500.
In a more specific case study on implementation, the thickness of the AlGaN layer is preferably 25~30nm, and Al components are preferred
It is 20~30%（Atomic molar compares content）.
In a more specific case study on implementation, the thickness of the GaN cap is preferably 1~2nm.
In a more specific case study on implementation, the thickness of the BN films or BAlN films is preferably 1~20nm.
Another aspect of the present invention provides a kind of manufacture of the AlGaN/GaN heterojunction devices with gate medium in situ
Method is included in Grown and forms the operation of AlGaN/GaN heterojunction structures, and further further includes：By described in
AlGaN/GaN heterojunction structures are placed in epitaxial growth equipment, and using nitrogen source and boron source and as the silicon source of optional raw material through carrier gas
Input epitaxial growth equipment in, so as on the AlGaN/GaN heterojunction structures growth formed as gate medium BN films or
Person's BAlN films.
Further, in a more typical case study on implementation, which may include steps of：
（1）Substrate is placed in epitaxial growth equipment, and the buffer layer of one layer of extension or more, then extension high resistant on substrate
GaN layer and the non-impurity-doped GaN layer that thickness is 20~100nm；
（2）The GaN lids of 1~2nm of AlGaN layer and thickness of 20~30nm of epitaxial thickness on the non-impurity-doped GaN layer
Cap layers；
（3）The BN films of one layer of extension in original position or more or BAlN films in the GaN cap；
（4）To step（3）Region on obtained device surface corresponding to source electrode, drain electrode, grid is processed, and is then made
The source electrode of the AlGaN/GaN heterojunction devices and drain electrode and grid, and after annealing is respectively formed Ohmic contact and Schottky
Contact.
Further, the boron source can be selected but be not limited to gas phase or high-purity solid is containing boron material, for example, the gas phase
It can be selected containing boron material but be not limited to trimethyl borine（TMB）, boron triethyl（TEB）、BCl3Or borine.
Further, in one more specifically case study on implementation, step（4）It may also include：
To step（3）Obtained device surface gluing, photoetching, expose region corresponding with source electrode and drain electrode, and stop with
The corresponding region of grid etches source, the drain electrode corresponding region of the device with III-V ICP techniques, and depth is 100~200nm；
And using PVD process in the source of the device, drain electrode corresponding region depositing Ti/Al/Ti/Au or Ti/Al/Ni/
Au deposits Ni/Au or Cr/Au in grid corresponding region, forms Ohmic contact and Schottky contacts by annealing process respectively.
The semiconductor devices with AlGaN/GaN heterojunction structures of the present invention includes HEMT（High-velocity electrons mobility crystal
Pipe）, HFET（Heterojunction field effect transistor）, MOSFET（Mos field effect transistor）Deng, and do not limit to
In this.
The present invention passes through the growth in situ BN or BAlN in the reaction chamber when growing AlGaN/GaN heterojunction device materials
As the gate medium of such device, can together be completed in material epitaxy, there is no gate medium passivation layer and device architecture it
Between oxidation, stain, the problems such as interfacial state increase, and be nitride, so being more suitable for group III-nitride heterojunction device
Gate medium.
Below in conjunction with attached drawing and more specifically embodiment is further explained present disclosure.
Referring to Fig. 1, involved by the present embodiment there is the AlGaN/GaN heterojunction devices of gate medium in situ to include being formed
In AlGaN/GaN heterojunction structures and source electrode, drain and gate on substrate, wherein, which includes edge and sets
Determine buffer layer, high resistant GaN layer, non-impurity-doped GaN layer, AlGaN layer and GaN cap that direction is sequentially formed on substrate, it is described
Original position epitaxial growth has BN films or BAlN films in GaN cap.
And its typical preparation process can include step as follows：
（1）One or more layers buffer layer of first extension on substrate is fitted with alleviating the lattice of substrate and GaN adaptation and stress
Match, then electrical resistivity of epitaxy is more than 1 × 106The high resistant GaN layer of Ω cm and the non-impurity-doped of 20~100nm or intrinsic GaN layer；
（2）The AlGaN layer of 25~30nm of extension and the GaN cap of 1~2nm on GaN layer；
（3）Then original position one layer of BN film of extension or BAlN films in GaN cap；
（4）Gluing, photoetching, expose device source（source）And leakage（drain）Region, barrier grid（gate）Region is used
The source of technique etched features that III-V ICP techniques or other industries are commonly used（source）And leakage（drain）Region, depth are
100~200nm；
（5）In the source of sample surfaces corresponding region making devices（source）, leakage（drain）, grid（gate）Electrode, annealing
Obtain Ohmic contact and Schottky contacts.
Abovementioned steps（1）In, which is preferably 300 μm of Si, SiC or sapphire to 1500 μ m-thicks of thickness
（sapphire）Substrate, buffer layer are preferably AlN and AlGaN or AlN/AlGaN superlattice structures, then again extension 2~
4 μm of high resistant GaN is finally the GaN layer that defect concentration is low and electron concentration is high, it is desirable that its mobility is more than 500.
Abovementioned steps（2）In, the GaN blocks of the AlGaN layer of 20~30nm of extension and 1~2nm preferably on GaN layer
Layer, wherein AlGaN thickness is preferably 20~30nm, and Al components are preferably 20~30%.
Abovementioned steps（1）-（2）Epitaxy technique operation, process conditions and raw material that industry notes can be used to carry out, therefore
It need not repeat herein.
Abovementioned steps（3）In, it is preferably in situ in the reaction chamber to generate one layer of BN or BAlN in GaN cap surface in situ
Passivation film, can be with TMB, TEB, BCl3, borine, high-purity solid boron material etc. as boron source, with TMA, pure solid boron material
Material is as silicon source, NH3、N2Deng as nitrogen source, H2Or N2As transporting the carrier gas of reaction source, but it is not limited to cited object
Matter.
Further, in abovementioned steps（3）In, BN films or BAlN film growth temperatures are preferably 800~1400 DEG C,
Thickness is preferably 1~20nm, and B atomic molar ratios are preferably 20~100%.
This has a series of excellent physics by BN or BAlN (Boron Nitride) film being epitaxially formed in situ
Chemical property, for example, hardness is high, thermal conductivity is high, and thermal stability and chemical stability are high, and rapid heat dissipation, band gap is wide, electric insulating quality
Good, dielectric constant is big, non-toxic and safe etc., particularly with high dielectric constant, between big energy gap, with device architecture not
Aoxidized, stain, the characteristics of low surface state, can effective suppression device current collapse and echo effect.
It more specifically says, such boron nitride pellicle electrical insulating property is 10 at 25 DEG C14Ω-cm, 2000 DEG C may also reach up
103Ω-cm, breakdown voltage be 3 kV/mm, energy gap be 6.6 eV, dielectric constant 4.5, more than SiO2, not by temperature and
The influence of electric field frequency variation, these electrical properties meet the requirement that semiconductor devices selects gate dielectric material, are consequently adapted to
As the gate dielectric layer of GaN related devices, and it can effectively reduce grid leakage current.
Step（5）In, other techniques for being commonly used using PVD process or industry, for example, the techniques such as sputtering, atomic deposition
In metals superimposed layers such as source and drain regions the preferred deposition Ti/Al/Ti/Au or Ti/Al/Ni/Au of device, in gate
Region preferred deposition Ni/Au or Cr/Au form Ohmic contact and Schottky contacts by annealing process respectively.
By testing the AlGaN/GaN heterojunction devices obtained by previous process, it can be found that growth in situ
BN BAlN films can effectively reduce surface state/interface state density, breakdown voltage is improved, compared with existing use
SiO2、SiNx(0.5≤x≤1)、Al2O3The performance of AlGaN/GaN heterojunction devices as gate medium passivation layer has industry
Fail completely it is expecting, be obviously improved.
It should be noted that term " comprising ", "comprising" or its any other variant are intended in the present specification
Non-exclusive inclusion, so that process, method, article or equipment including a series of elements not only will including those
Element, but also including other elements that are not explicitly listed or further include as this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence " including one ... ", it is not excluded that wrapping
Include in process, method, article or the equipment of the element that also there are other identical elements.
It should be appreciated that in addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent replacement or wait
Effect transformation formed technical solution, all fall within the present invention claims protection domain.
Claims (19)
1. a kind of AlGaN/GaN heterojunction devices with gate medium in situ, heterogeneous including AlGaN/GaN formed on substrate
Structure and source electrode, drain and gate, which is characterized in that there is epitaxial growth also in situ on the AlGaN/GaN heterojunction structures is used as
The BAlN films of gate medium, and the forming process of the BAlN films includes：AlGaN/GaN is completed in epitaxial growth equipment
After the growth of heterojunction structure, directly nitrogen source and boron source and silicon source are inputted through carrier gas in the epitaxial growth equipment, thus
Growth in situ forms BAlN films on the AlGaN/GaN heterojunction structures, and wherein BAlN films growth temperature is 800~1400
DEG C, thickness is 1~20nm, and B atomic molars ratio is 20~100%.
2. the AlGaN/GaN heterojunction devices with gate medium in situ according to claim 1, which is characterized in that described
AlGaN/GaN heterojunction structures include the buffer layer, high resistant GaN layer, the non-impurity-doped GaN that are sequentially formed in along direction initialization on substrate
Layer, AlGaN layer and GaN cap, in the GaN cap epitaxial growth in situ have BAlN films.
3. the AlGaN/GaN heterojunction devices with gate medium in situ according to claim 2, it is characterised in that：It is described
Substrate includes Si, SiC or Sapphire Substrate that thickness is 300 μm~1500 μm.
4. the AlGaN/GaN heterojunction devices with gate medium in situ according to claim 2, which is characterized in that described
Buffer layer includes AlN, AlGaN or AlN/AlGaN superlattice structure.
5. the AlGaN/GaN heterojunction devices with gate medium in situ according to claim 2, which is characterized in that described
The thickness of high resistant GaN layer is 2~4 μm.
6. the AlGaN/GaN heterojunction devices with gate medium in situ according to claim 2, which is characterized in that described
Electron mobility in non-impurity-doped GaN layer is more than 500.
7. the AlGaN/GaN heterojunction devices with gate medium in situ according to claim 2, which is characterized in that described
The thickness of AlGaN layer is 20~30nm, and Al components are 20~30%.
8. the AlGaN/GaN heterojunction devices with gate medium in situ according to claim 2, which is characterized in that described
The thickness of GaN cap is 1~2nm.
9. the AlGaN/GaN heterojunction devices with gate medium in situ according to claim 1, which is characterized in that described
Boron source includes gas phase or high-purity solid containing boron material, and the gas phase includes TMB, TEB, BCl containing boron material3Or borine.
10. a kind of manufacturing method of the AlGaN/GaN heterojunction devices with gate medium in situ, including in epitaxial growth equipment
The operation of AlGaN/GaN heterojunction structures is formed in Grown, it is characterised in that is further included：In AlGaN/GaN heterojunction structures
After, directly nitrogen source and boron source and silicon source are inputted through carrier gas in the epitaxial growth equipment, so as in the AlGaN/
Growth forms the BAlN films as gate medium on GaN heterojunction structures, and wherein BAlN films growth temperature is 800~1400 DEG C,
Thickness is 1~20nm, and B atomic molars ratio is 20~100%.
11. there is the manufacturing method of the AlGaN/GaN heterojunction devices of gate medium in situ, feature according to claim 10
It is to include the following steps：
(1) substrate is placed in epitaxial growth equipment, and the buffer layer of one layer of extension or more on substrate, then extension high resistant GaN layer
With the non-impurity-doped GaN layer that thickness is 20~100nm；
(2) on the non-impurity-doped GaN layer 1~2nm of AlGaN layer and thickness of 25~30nm of epitaxial thickness GaN cap；
(3) in the GaN cap in situ one layer of extension or more BAlN films；
(4) step (3) is obtained and is processed on device surface corresponding to the region of source electrode, drain electrode, grid, then described in making
The source electrode of AlGaN/GaN heterojunction devices and drain electrode and grid, and after annealing is respectively formed Ohmic contact and Schottky contacts.
12. the manufacturing method of the AlGaN/GaN heterojunction devices according to claim 11 with gate medium in situ, special
Sign is：The substrate includes Si, SiC or Sapphire Substrate that thickness is 300 μm~1500 μm.
13. the manufacturing method of the AlGaN/GaN heterojunction devices according to claim 11 with gate medium in situ, special
Sign is：The buffer layer includes AlN, AlGaN or AlN/AlGaN superlattice structure.
14. the manufacturing method of the AlGaN/GaN heterojunction devices according to claim 11 with gate medium in situ, special
Sign is：The thickness of the high resistant GaN layer is 2~4 μm.
15. the manufacturing method of the AlGaN/GaN heterojunction devices according to claim 11 with gate medium in situ, special
Sign is：Electron mobility in the non-impurity-doped GaN layer is more than 500.
16. the manufacturing method of the AlGaN/GaN heterojunction devices according to claim 11 with gate medium in situ, special
Sign is：The thickness of the AlGaN layer is 25~30nm, and Al components are 25~30%.
17. the manufacturing method of the AlGaN/GaN heterojunction devices according to claim 11 with gate medium in situ, special
Sign is：The thickness of the GaN cap is 1~2nm.
18. the system of the AlGaN/GaN heterojunction devices with gate medium in situ according to any one of claim 10-11
Make method, which is characterized in that the boron source includes gas phase or high-purity solid containing boron material, and the gas phase includes three containing boron material
Methyl boron, boron triethyl, BCl3Or borine.
19. the manufacturing method of the AlGaN/GaN heterojunction devices according to claim 11 with gate medium in situ, special
Sign is that step (4) includes：
Device surface gluing, photoetching are obtained to step (3), expose region corresponding with source electrode and drain electrode, and is stopped and grid
Corresponding region etches source, the drain electrode corresponding region of the device with III-V ICP techniques, and depth is 100~200nm；
And using PVD process in the source of the device, drain electrode corresponding region depositing Ti/Al/Ti/Au or Ti/Al/Ni/Au,
Ni/Au or Cr/Au is deposited in grid corresponding region, forms Ohmic contact and Schottky contacts by annealing process respectively.
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| CN110221369B (en) * | 2019-06-26 | 2020-10-27 | 西安交通大学 | Bragg reflector based on BN (Al) film and preparation method |
| CN113540231B (en) * | 2021-06-15 | 2022-10-18 | 西安电子科技大学 | P-GaN high electron mobility transistor based on in-situ growth MIS structure and preparation method |
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| CN101136432A (en) * | 2006-09-01 | 2008-03-05 | 中国科学院半导体研究所 | Wideband gap gallium nitride radical heterojunction field effect transistor structure and method for making |
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| AlGaN/GaN MISHEMT with hBN as gate dielectric;J.-C.Gerbedoen;《Diamond and Related Materials》;20090224;第18卷(第5-8期);第1039-1042页 * |
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