CN111653473B - Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation - Google Patents
Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation Download PDFInfo
- Publication number
- CN111653473B CN111653473B CN202010339245.2A CN202010339245A CN111653473B CN 111653473 B CN111653473 B CN 111653473B CN 202010339245 A CN202010339245 A CN 202010339245A CN 111653473 B CN111653473 B CN 111653473B
- Authority
- CN
- China
- Prior art keywords
- layer
- gallium nitride
- silicon
- wafer
- microwave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 161
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 139
- 239000010703 silicon Substances 0.000 title claims abstract description 133
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 132
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 239000000463 material Substances 0.000 title claims abstract description 66
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 55
- 230000004888 barrier function Effects 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000002131 composite material Substances 0.000 claims abstract description 16
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 238000002955 isolation Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 20
- 235000012239 silicon dioxide Nutrition 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 18
- 230000006911 nucleation Effects 0.000 claims description 16
- 238000010899 nucleation Methods 0.000 claims description 16
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 13
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- -1 indium aluminum nitrogen Chemical compound 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 150000003376 silicon Chemical class 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 238000003631 wet chemical etching Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000006249 magnetic particle Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011112 process operation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
The invention discloses a silicon-based gallium nitride microwave device material structure with enhanced heat dissipation, which is characterized by comprising the following components: a silicon substrate layer; the high-heat-conductivity dielectric layer is positioned on the upper surface of the silicon substrate layer; the buffer layer is positioned on the upper surface of the high-heat-conductivity medium layer; a channel layer located on the upper surface of the buffer layer; the composite barrier layer is positioned on the upper surface of the channel layer to form a silicon-based gallium nitride microwave device material structure with enhanced heat dissipation. According to the material structure of the silicon-based gallium nitride microwave device with enhanced heat dissipation, the high-heat-conductivity dielectric layer is adopted to realize the bonding between the silicon substrate layer and the buffer layer, so that the high bonding strength, the high mechanical strength and the high stability are maintained, the heat resistance of the device is reduced, and the heat dissipation performance of the silicon-based gallium nitride microwave device is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a material structure of a silicon-based gallium nitride microwave device with enhanced heat dissipation.
Background
With the development of microelectronic technology, the third generation wide bandgap semiconductor material represented by gallium nitride has larger bandgap, higher critical breakdown electric field, higher electron saturation drift velocity, stable chemical performance, high temperature resistance, radiation resistance and other physical properties, and the manufacturing of electronic devices by using gallium nitride materials can further reduce the chip area, improve the working frequency, improve the working temperature, reduce the on-resistance, improve the breakdown voltage and the like, so that the gallium nitride materials have great potential in the aspect of preparing microwave devices.
Gallium nitride, aluminum gallium nitride, indium aluminum nitrogen and the like which have high polarization coefficients and are in the same material system with the gallium nitride, a heterostructure formed by the gallium nitride and the aluminum gallium nitride or indium aluminum nitrogen with a forbidden band width larger than that of the gallium nitride can form two-dimensional electron gas, and the two-dimensional electron gas can be obtained at room temperature to be higher than 1500cm 2 Electron mobility of/V.s up to 1.5X10 cm 7 Saturated electron velocity sum of/s is higher than 1×10 13 cm -2 A high-speed schottky diode (SBD) and a high electron mobility transistor (High Electron Mobility Transistor HEMT) device developed based on a gallium nitride material can have a lower on-resistance and a higher output current. In addition, the higher critical breakdown electric field strength of the gallium nitride material can enable the electronic device to have higher breakdown voltage, so that the device can work under higher working voltage, and the device has higher microwave output power density. Gallium nitride devices have higher power added efficiency and thus lower energy loss than silicon or gallium arsenide microwave electronic devices of equal output power.
Because of the immaturity of gallium nitride self-supporting substrate technology, gallium nitride based materials are mainly deposited on heterogeneous substrates in gallium nitride microwave devices. Substrates used so far for the growth of gallium nitride materials have mainly been silicon carbide and silicon. The silicon carbide-based gallium nitride device benefits from smaller lattice mismatch of silicon carbide and gallium nitride, higher heat conduction performance of silicon carbide, lower thermal resistance and higher output power density, and is relatively early in research and development and relatively mature in technology. Silicon carbide-based gallium nitride microwave devices have been widely used in the fields of military radars, satellites, communication base stations, and the like. However, silicon carbide-based gallium nitride devices are relatively expensive due to the relatively high price and small size of silicon carbide substrates. And the silicon-based gallium nitride device has lower cost and higher cost performance due to the large size and low cost of the silicon substrate wafer and the mass production advantage of a silicon production line. The silicon-based gallium nitride microwave device is expected to be applied to mobile communication terminals such as 5G communication base stations and mobile phones in a large scale.
However, an important disadvantage of silicon-based gallium nitride devices, compared to silicon-based gallium nitride devices, is the relatively high thermal resistance and thus the relatively poor heat dissipation, thus limiting the output power density and efficiency of silicon-based gallium nitride microwave devices. There are two physical mechanisms of poor heat dissipation. Firstly, the thermal conductivity of a silicon substrate is relatively poor, the room temperature thermal conductivity value of a typical silicon carbide substrate is 4.0W/cm.K, and the silicon substrate is only 1.5W/cm.K; secondly, the external delay of gallium nitride-based materials is carried out on a silicon substrate, and because the lattice mismatch ratio of silicon and gallium nitride crystal materials is large, a very thick nucleation layer and transition layer, such as aluminum gallium nitride materials with gradual change of aluminum components or aluminum nitride/gallium nitride superlattice materials, are required to be inserted between the active structure of the gallium nitride device and the silicon substrate, and the crystal materials of the nucleation layer and the transition layer have poor quality, more defects and poor heat conductivity. Therefore, it is necessary to solve the two problems to improve the heat dissipation performance of the silicon-based gallium nitride microwave device.
The current method for improving the heat dissipation performance of the silicon-based gallium nitride microwave device mainly comprises several technical routes:
1. after the device bare chip process is finished, the silicon substrate is thinned as much as possible, and then the thinned device is diced and then transferred to a heat sink with high heat conductivity. Most of the current silicon-based gallium nitride microwave devices are manufactured by thinning a silicon substrate to 100 μm, and the technology in development is to thin the silicon substrate to 50 μm. For example, "A.Pantellini, A.Nanni, C.Lanzieri," Thermal behavior of AlGaN/GaN HEMT on silicon Microstrip technology, "6th European Microwave Integrated Circuit Conference,Oct.2011" proposes a method for improving the heat dissipation performance of a device by thinning a silicon substrate, which has the disadvantage that the difficulty of the process operation after the thinning of the silicon substrate is increased, thereby resulting in a reduction in the yield of the device.
2. A method for depositing a layer of high thermal conductivity dielectric material on the surface of a silicon-based gallium nitride microwave device, such as "N.Tsurumi, H.Ueno, T.Murata, H.Ishida, Y.Uemoto, T.Ueda, K.Inoue, T.Tanaka," AlN Passivation Over AlGaN/GaN HFETs for Surface Heat Spreading, "IEEE Transactions on Electron Devices, vol.57, no.5, pp.980-985, may 2010," proposes to deposit a layer of aluminum nitride on the surface of a gallium nitride microwave device, "Z.Lin, C.Liu, C.Zhou, Y.Chai, M.Zhou and y.pei," Improved performance of HEMTs with BN as heat dissipation, "2016IEEE International Nanoelectronics Conference (INEC), chengdu,2016, pp.1-2," proposes to deposit a layer of boron nitride on the surface of a silicon-based gallium nitride microwave device, "Marko j. Tadjer, travis j. Anderson, karl d. Hobart, tatyana i. Feygelson, joshua d. Caldwell, charles r.eddy, jr., fritz j. Kub, james e. Buter, bradford pad, 95," 97 self-spin-69 "proposes to deposit a layer of boron nitride on the surface of a silicon-based gallium nitride microwave device," microwave material on the surface of a silicon-based gallium nitride microwave device, "microwave device is a high thermal conductivity dielectric material such as" magnetic nitride crystalline particles deposited on the surface of a silicon-based gallium nitride microwave device, "magnetic material such as" magnetic particles "are deposited on the surface of high thermal conductivity dielectric material," characterized by the microwave device such as "magnetic particles deposited on the surface of silicon nitride microwave device, wherein" comprises: these high thermal conductivity materials tend to introduce additional stress, affect the performance of the device, or cause a reduction in the long term reliability of the device.
3. Optimizing layout designs of silicon-based gallium nitride microwave devices, such as "K.Belkacemi and R.hocine," efficiency 3D-TLM Modeling and Simulation for theThermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA, "Journal ofLow Power Electronics and Applications, vol.8, no.23,1-19,2018," proposes a method for increasing gate finger spacing and reducing gate density to reduce heat generation source density, which has the disadvantages of increasing the area of the device and not having high heat dissipation effect.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a silicon-based gallium nitride microwave device material structure with enhanced heat dissipation.
One embodiment of the present invention provides a heat-dissipation enhanced silicon-based gallium nitride microwave device material structure, comprising:
a silicon substrate layer;
the high-heat-conductivity dielectric layer is positioned on the upper surface of the silicon substrate layer;
the buffer layer is positioned on the upper surface of the high-heat-conductivity medium layer;
a channel layer located on the upper surface of the buffer layer;
the composite barrier layer is positioned on the upper surface of the channel layer to form a silicon-based gallium nitride microwave device; the silicon-based gallium nitride microwave device material structure is prepared by the following method: epitaxially growing an aluminum nitride nucleation layer on a high-resistance silicon substrate layer; epitaxially growing an aluminum nitride/gallium nitride superlattice transition layer on the aluminum nitride nucleation layer; epitaxially growing a gallium nitride buffer layer on the transition layer of the aluminum nitride/gallium nitride superlattice by adopting an MOCVD method; epitaxially growing a gallium nitride channel layer on the gallium nitride buffer layer; epitaxially growing an aluminum nitride isolation layer on the gallium nitride channel layer; epitaxially growing an AlGaN core barrier layer on the AlGaN isolation layer; epitaxially growing a gallium nitride cap layer on the core barrier layer to make and form a first wafer; depositing a first silicon dioxide layer on the upper surface of the first wafer by adopting a PECVD method to form a second wafer; depositing a second silicon dioxide layer on the upper surface of a silicon wafer by adopting a PECVD method to form a third wafer; reversing the second wafer by adopting a wafer chemical bonding technology, and bonding the surface of the first silicon dioxide layer and the surface of the second silicon dioxide layer together to form a fourth wafer; removing the high-resistance silicon substrate layer in the fourth wafer to form a sixth wafer; removing the aluminum nitride nucleation layer in the sixth wafer to form a seventh wafer; removing the aluminum nitride/gallium nitride superlattice transition layer in the seventh wafer to form an eighth wafer; depositing a first aluminum nitride layer on the upper surface of the eighth wafer to form a ninth wafer; depositing a second aluminum nitride layer on the surface of a silicon substrate layer to form a tenth wafer; bonding the surface of the first aluminum nitride layer and the surface of the second aluminum nitride layer together to form an eleventh wafer; removing the silicon wafer layer in the eleventh wafer to form a twelfth wafer; and removing the first silicon dioxide layer and the second silicon dioxide layer in the twelfth wafer to obtain the silicon-based gallium nitride microwave device structure, wherein the high-heat-conductivity dielectric layer comprises a first aluminum nitride layer and a second aluminum nitride layer.
In one embodiment of the present invention, the thickness of the high thermal conductivity dielectric layer is 20 to 20000nm.
In one embodiment of the present invention, the buffer layer comprises gallium nitride, aluminum gallium nitride or aluminum nitride, and has a thickness of 100 to 5000nm.
In one embodiment of the present invention, the channel layer is gallium nitride, and the thickness is 10-1000 nm.
In one embodiment of the invention, the composite barrier layer comprises an isolation layer and a core barrier layer, wherein,
the isolation layer is positioned on the upper surface of the channel layer;
the core barrier layer is positioned on the upper surface of the isolation layer.
In one embodiment of the invention, the composite barrier layer comprises a core barrier layer and a cap layer, wherein,
the core barrier layer is positioned on the upper surface of the channel layer;
the cap layer is located on the upper surface of the core barrier layer.
In one embodiment of the invention, the composite barrier layer comprises an isolation layer, a core barrier layer, and a cap layer, wherein,
the isolation layer is positioned on the upper surface of the channel layer;
the core barrier layer is positioned on the upper surface of the isolation layer;
the cap layer is located on the upper surface of the core barrier layer.
In an embodiment of the present invention, according to any one of the foregoing heat dissipation enhanced silicon-based gallium nitride microwave device material structures, the isolation layer is aluminum nitride, and the thickness is 0.5-1.5 nm.
In one embodiment of the present invention, according to any one of the above-mentioned heat dissipation enhanced silicon-based gallium nitride microwave device material structures, the core barrier layer is aluminum gallium nitride, wherein the composition of aluminum is 0.2-0.4, and the thickness is 10-30 nm;
or indium aluminum nitrogen, wherein the composition of indium is 0.1-0.2, and the thickness is 5-30 nm;
or aluminum nitride with the thickness of 2-10 nm.
In one embodiment of the present invention, according to any one of the above-mentioned heat dissipation enhanced silicon-based gallium nitride microwave device material structures, the cap layer is gallium nitride, and the thickness is 1-3 nm;
or silicon nitride with a thickness of 1-10 nm.
Compared with the prior art, the invention has the beneficial effects that:
according to the material structure of the silicon-based gallium nitride microwave device with enhanced heat dissipation, the high-heat-conductivity dielectric layer is adopted to realize the bonding between the silicon substrate layer and the buffer layer, so that the high bonding strength, the high mechanical strength and the high stability are maintained, the heat resistance of the device is reduced, and the heat dissipation performance of the silicon-based gallium nitride microwave device is improved.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a material structure of a silicon-based gallium nitride microwave device with enhanced heat dissipation according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another material structure of a heat dissipation enhanced silicon-based gallium nitride microwave device according to an embodiment of the invention;
FIG. 3 is a schematic diagram of a structure of a material of a GaN-based microwave device with enhanced heat dissipation according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a structure of a material of a GaN-based microwave device with enhanced heat dissipation according to an embodiment of the invention;
fig. 5a to 5l are schematic flow diagrams of a method for preparing a material structure of a silicon-based gallium nitride microwave device with enhanced heat dissipation according to an embodiment of the present invention.
Reference numerals illustrate:
1-a silicon substrate layer; 2-a high thermal conductivity dielectric layer; 3-a buffer layer; 4-a channel layer; a 5-composite barrier layer; 51-isolating layer; 52-a core barrier layer; 53-cap layer; 10-a first wafer; 20-a second wafer; 30-a third wafer; 40-a fourth wafer; 60-sixth wafer; 70-seventh wafer; 80-eighth wafer; 90-ninth wafer; 100-tenth wafer; 110-eleventh wafer; 120-twelfth wafer; 11-a high-resistance silicon substrate layer; 12-a nucleation layer; 13-a transition layer; 21-a first silicon dioxide layer; 31-silicon wafer; 32-a second silicon dioxide layer; 91-a first aluminum nitride layer; 101-a second aluminum nitride layer.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Example 1
The current method for improving the heat dissipation performance of the silicon-based gallium nitride microwave device comprises the following steps: 1. after the device bare chip process is finished, thinning the silicon substrate as much as possible, wherein the process operation difficulty after the silicon substrate is thinned is increased, so that the yield of the device is reduced; 2. a layer of high-heat-conductivity dielectric material is deposited on the surface of the silicon-based gallium nitride microwave device, and the method has the defects that the high-heat-conductivity material often brings extra stress to influence the performance of the device or reduce the long-term reliability of the device; 3. the layout design of the silicon-based gallium nitride microwave device is optimized, and the method has the defects that the area of the device can be increased, and the heat dissipation effect is not high. Based on the above-mentioned problems, in order to reduce the channel temperature of the device operation and improve the performance of the device, please refer to fig. 1, fig. 1 is a schematic structural diagram of a material structure of a silicon-based gallium nitride microwave device with enhanced heat dissipation, which is provided in an embodiment of the present invention, the embodiment provides a material structure of a silicon-based gallium nitride microwave device with enhanced heat dissipation, which includes:
a silicon substrate layer 1;
a high thermal conductivity dielectric layer 2 positioned on the upper surface of the silicon substrate layer 1;
the buffer layer 3 is positioned on the upper surface of the high-heat-conductivity medium layer 2;
a channel layer 4 located on the upper surface of the buffer layer 3;
and the composite barrier layer 5 is positioned on the upper surface of the channel layer 4 to form a silicon-based gallium nitride microwave device material structure with enhanced heat dissipation.
Preferably, the silicon substrate layer 1 is high-resistance silicon, the doping type is n-type or p-type, the resistivity is 3000-30000 Ω -cm, and the crystal orientation of the silicon substrate is [111]. More preferably, the resistivity is 5000 Ω·cm.
Preferably, the thickness of the high thermal conductivity dielectric layer 2 is 20 to 20000nm. More preferably, the high thermal conductivity dielectric layer 2 is aluminum nitride with a thickness of 1000nm.
Preferably, the buffer layer 3 comprises gallium nitride, aluminum gallium nitride or aluminum nitride, and has a thickness of 100 to 5000nm. More preferably, the buffer layer 3 is gallium nitride with a thickness of 1000nm.
Preferably, the channel layer 4 is gallium nitride and has a thickness of 10 to 1000nm. More preferably, the channel layer 4 is gallium nitride with a thickness of 300nm.
Further, referring to fig. 2, fig. 2 is a schematic structural diagram of another material structure of a silicon-based gallium nitride microwave device with enhanced heat dissipation according to an embodiment of the invention, where the composite barrier layer 5 includes an isolation layer 51 and a core barrier layer 52, and in this embodiment,
an isolation layer 51 located on the upper surface of the channel layer 4;
and a core barrier layer 52 on the upper surface of the isolation layer 51.
Preferably, the isolation layer 51 is aluminum nitride with a thickness of 0.5-1.5 nm. More preferably, the isolation layer 51 is aluminum nitride with a thickness of 1nm.
Preferably, the core barrier layer 52 is aluminum gallium nitride, wherein the composition of aluminum is 0.2-0.4, and the thickness is 10-30 nm; or indium aluminum nitrogen, wherein the composition of indium is 0.1-0.2, and the thickness is 5-30 nm; or aluminum nitride with the thickness of 2-10 nm. More preferably, the core barrier layer 52 is aluminum gallium nitride, wherein the composition of aluminum is 0.25 and the thickness is 20nm.
Alternatively, referring to fig. 3, fig. 3 is a schematic structural diagram of a material structure of another silicon-based gallium nitride microwave device with enhanced heat dissipation according to an embodiment of the invention, where the composite barrier layer 5 includes a core barrier layer 52 and a cap layer 53, and in this embodiment,
a core barrier layer 52 located on the upper surface of the channel layer 4;
the cap layer 53 is located on the upper surface of the core barrier layer 52.
Preferably, the core barrier layer 52 is aluminum gallium nitride, wherein the composition of aluminum is 0.2-0.4, and the thickness is 10-30 nm; or indium aluminum nitrogen, wherein the composition of indium is 0.1-0.2, and the thickness is 5-30 nm; or aluminum nitride with the thickness of 2-10 nm. More preferably, the core barrier layer 52 is aluminum gallium nitride, wherein the composition of aluminum is 0.25 and the thickness is 20nm.
Preferably, the cap layer 53 is gallium nitride with a thickness of 1-3 nm; or silicon nitride with a thickness of 1-10 nm. More preferably, the cap layer 53 is gallium nitride, with a thickness of 3nm.
Alternatively, referring to fig. 4, fig. 4 is a schematic structural diagram of a material structure of another silicon-based gallium nitride microwave device with enhanced heat dissipation according to an embodiment of the invention, where the composite barrier layer 5 includes an isolation layer 51, a core barrier layer 52 and a cap layer 53, and in this embodiment,
an isolation layer 51 located on the upper surface of the channel layer 4;
a core barrier layer 52 located on the upper surface of the isolation layer 51;
the cap layer 53 is located on the upper surface of the core barrier layer 52.
Preferably, the isolation layer 51 is aluminum nitride with a thickness of 0.5-1.5 nm. More preferably, the isolation layer 51 is aluminum nitride with a thickness of 1nm.
Preferably, the core barrier layer 52 is aluminum gallium nitride, wherein the composition of aluminum is 0.2-0.4, and the thickness is 10-30 nm; or indium aluminum nitrogen, wherein the composition of indium is 0.1-0.2, and the thickness is 5-30 nm; or aluminum nitride with the thickness of 2-10 nm. More preferably, the core barrier layer 52 is aluminum gallium nitride, wherein the composition of aluminum is 0.25 and the thickness is 20nm.
Preferably, the cap layer 53 is gallium nitride with a thickness of 1-3 nm; or silicon nitride with a thickness of 1-10 nm. More preferably, the cap layer 53 is gallium nitride, with a thickness of 3nm.
In the material structure of the conventional silicon-based gallium nitride, because of larger lattice constant mismatch between the silicon substrate layer and the gallium nitride buffer layer, an aluminum nitride nucleation layer and a transition layer are introduced, and the transition layer can be aluminum gallium nitride or aluminum nitride/gallium nitride superlattice. But the aluminum nitride nucleation layer and the transition layer have poor crystal quality, high dislocation density and poor thermal conductivity, and seriously affect the heat radiation performance of the silicon-based gallium nitride microwave device. According to the material structure of the silicon-based gallium nitride microwave device with enhanced heat dissipation, an aluminum nitride nucleation layer and a transition layer are not arranged between the silicon substrate layer 1 and the buffer layer 3, so that the thermal resistance of the device is reduced, the heat conductivity of the device is improved, the working channel temperature of the device is reduced, and the performance of the device is improved.
Meanwhile, in the material structure of the conventional silicon-based gallium nitride, because of larger lattice mismatch between the silicon substrate layer and the gallium nitride buffer layer, the two materials are difficult to directly bond, and a stable silicon-based gallium nitride microwave device material structure is formed. The bonding between the silicon substrate layer 1 and the buffer layer 3 is realized by adopting the high-heat-conductivity dielectric layer 2, so that the high bonding strength, the high mechanical strength and the high stability are maintained, and the heat resistance of the device is reduced, thereby improving the heat dissipation performance of the silicon-based gallium nitride microwave device, reducing the working channel temperature of the device and improving the performance of the device.
In summary, the structure of the material for the silicon-based gallium nitride microwave device with enhanced heat dissipation provided in this embodiment is as follows: the high-heat-conductivity dielectric layer 2 is manufactured on the upper surface of the silicon substrate layer 1, so that the mechanical strength, stability and heat-conducting property between the III-nitride buffer layer 3 and the silicon substrate layer 1 are improved; the buffer layer 3 is manufactured on the upper surface of the high-heat-conductivity dielectric layer 2, and a nucleation layer or a transition layer with relatively high dislocation density and relatively poor heat conductivity is not arranged between the buffer layer and the high-heat-conductivity dielectric layer 2, so that the heat resistance of the device is reduced and the heat conductivity of the device is improved; the channel layer 4 is manufactured on the upper surface of the buffer layer 3 and is used for improving a conductive channel for the device; the composite barrier layer 5 is manufactured on the upper surface of the channel layer 4, two-dimensional electron gas is formed at the interface between the composite barrier layer 5 and the channel layer 4 and is used as a conductive channel of the device, and the electrical characteristics of the silicon-based gallium nitride microwave device are further improved through the isolation layer 51 or the cap layer 53. The material structure of the silicon-based gallium nitride microwave device with enhanced heat dissipation provided by the embodiment also has the advantages of compatibility with the existing silicon production line, mass production, high yield and high reliability. The silicon-based gallium nitride microwave device material structure with enhanced heat dissipation provided by the embodiment can be applied to the fields of chips, systems and the like of radio frequency, microwaves and millimeter waves.
Example two
On the basis of the first embodiment, please refer to fig. 5a to 5l, fig. 5a to 5l are schematic flow diagrams of a method for preparing a material structure of a heat dissipation enhanced silicon-based gallium nitride microwave device according to an embodiment of the present invention, and the embodiment provides a method for preparing a material structure of a heat dissipation enhanced silicon-based gallium nitride microwave device according to the material structure of a heat dissipation enhanced silicon-based gallium nitride microwave device shown in fig. 4 in the first embodiment, which comprises the following steps:
referring to fig. 5a again, the apparatus and technique of Metal-organic chemical vapor deposition (Metal-Organic Chemical Vapor Deposition, abbreviated as MOCVD) are used to realize epitaxial growth of a group III gallium nitride material on a silicon substrate, and the specific manufacturing steps of the first wafer 10 of the silicon-based gallium nitride microwave device are as follows:
step 11, epitaxially growing an aluminum nitride nucleation layer 12 with the thickness of 200nm on a high-resistance silicon substrate layer 11 by adopting MOCVD equipment and technology, wherein the high-resistance silicon substrate layer 11 has the size of 8 inches, the thickness of 725 mu m, the resistivity of 5000 omega cm and the crystal orientation of [111];
step 12, epitaxially growing an aluminum nitride/gallium nitride superlattice transition layer 13 with the thickness of 1000nm on the aluminum nitride nucleation layer 12 by adopting MOCVD equipment and technology;
step 13, epitaxially growing a 1000nm thick GaN buffer layer 3 on the transition layer 13 of the aluminum nitride/GaN superlattice by MOCVD equipment and technique, wherein the transition layer is a silicon nitride filmIn the gallium nitride buffer layer 3, dislocation density 1e9cm -2 Fe doping is carried out, and the resistivity is 1MΩ·cm;
step 14, epitaxially growing a gallium nitride channel layer 4 with the thickness of 300nm on the gallium nitride buffer layer 3 by adopting MOCVD equipment and technology, wherein the gallium nitride channel layer 4 is unintentionally doped;
step 15, epitaxially growing an aluminum nitride isolation layer 51 with the thickness of 1nm on the gallium nitride channel layer 4 by adopting MOCVD equipment and technology;
step 16, epitaxially growing an AlGaN core barrier layer 52 with an Al component of 0.25 and a thickness of 20nm on the aluminum nitride isolation layer 51 by adopting MOCVD equipment and technology;
in step 17, a gallium nitride cap layer 53 with a thickness of 3nm is epitaxially grown on the core barrier layer 52 by using MOCVD equipment and technique to form the first wafer 10.
Referring to fig. 5b again, a first silicon dioxide layer 21 with a thickness of 250nm is deposited on the upper surface of the wafer 10 of the silicon-based gallium nitride microwave device manufactured in step 1 by using equipment and technology of a plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, abbreviated as PECVD) method, so as to manufacture a second wafer 20.
Referring to FIG. 5c, a second silicon dioxide layer 32 with a thickness of 250nm is deposited on the upper surface of a silicon wafer 31 by PECVD apparatus and technique to form a third wafer 30, wherein the silicon wafer 31 has a dimension of 8 inches, a thickness of 725 μm, a resistivity of 10Ω cm, and a crystal orientation of [100].
Step 4, please refer to fig. 5d again, the second wafer 20 manufactured in step 2 is inverted by using the wafer chemical bonding technology, and the surface of the first silicon dioxide layer 21 in the second wafer 20 and the surface of the second silicon dioxide layer 32 in the third wafer 30 manufactured in step 3 are bonded together to manufacture the fourth wafer 40;
step 5, please refer to fig. 5e again, a wet chemical etching technique, or a plasma etching technique is adopted to remove the high-resistance silicon substrate layer 11 in the fourth wafer 40 manufactured in step 4, so as to manufacture a sixth wafer 60;
step 6, please refer to fig. 5f again, wherein the aluminum nitride nucleation layer 12 in the sixth wafer 60 manufactured in step 5 is removed by wet chemical etching or plasma etching to manufacture a seventh wafer 70;
step 7, please refer to fig. 5g again, the aluminum nitride/gallium nitride superlattice transition layer 13 in the seventh wafer 70 manufactured in step 6 is removed by wet chemical etching technology or plasma etching technology, so as to manufacture an eighth wafer 80;
step 8, please refer to fig. 5h again, a magnetron sputtering technique is adopted to deposit a first aluminum nitride layer 91 with a thickness of 500nm on the upper surface of the eighth wafer 80 manufactured in step 7, so as to manufacture and form a ninth wafer 90;
step 9, please refer to fig. 5i again, a second aluminum nitride layer 101 with a thickness of 500nm is deposited on the surface of a silicon substrate layer 1 by using a magnetron sputtering technique to form a tenth wafer 100, wherein the silicon substrate layer 1 has a dimension of 8 inches, a thickness of 725 μm, a resistivity of 5000 Ω·cm, and a crystal orientation of [111];
step 10, please refer to fig. 5j again, using a wafer chemical bonding technique to bond the surface of the first aluminum nitride layer 91 of the ninth wafer 90 manufactured in step 8 with the surface of the second aluminum nitride layer 101 of the tenth wafer 100 manufactured in step 9, so as to manufacture an eleventh wafer 110;
step 11, please refer to fig. 5k again, the silicon wafer 31 layer in the eleventh wafer 110 manufactured in step 10 is removed by wet chemical etching technology or plasma etching technology, so as to manufacture a tenth wafer 120;
in step 12, referring to fig. 5l again, the first silicon dioxide layer 21 and the second silicon dioxide layer 32 in the tenth wafer 120 manufactured in step 11 are removed by wet chemical etching technology or plasma etching technology, so as to finally form the silicon-based gallium nitride microwave device structure of the embodiment, wherein the high thermal conductivity dielectric layer 2 includes the first aluminum nitride layer 91 and the second aluminum nitride layer 101.
It should be noted that, in this embodiment, the preparation processes of fig. 2, 3 and 4 are similar, and are not repeated here.
The preparation method of the material structure of the silicon-based gallium nitride microwave device with enhanced heat dissipation provided in this embodiment may implement the embodiment of the material structure of the silicon-based gallium nitride microwave device with enhanced heat dissipation described in the above embodiment, and its implementation principle and technical effects are similar and will not be described here again.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (10)
1. A heat dissipation enhanced silicon-based gallium nitride microwave device material structure, comprising:
a silicon substrate layer (1);
the high-heat-conductivity dielectric layer (2) is positioned on the upper surface of the silicon substrate layer (1);
the buffer layer (3) is positioned on the upper surface of the high-heat-conductivity dielectric layer (2);
a channel layer (4) located on the upper surface of the buffer layer (3);
the composite barrier layer (5) is positioned on the upper surface of the channel layer (4) to form the material structure of the silicon-based gallium nitride microwave device with enhanced heat dissipation; the silicon-based gallium nitride microwave device material structure is prepared by the following method: epitaxially growing an aluminum nitride nucleation layer (12) on a high-resistance silicon substrate layer (11); epitaxially growing an aluminum nitride/gallium nitride superlattice transition layer (13) on the aluminum nitride nucleation layer (12); epitaxially growing a gallium nitride buffer layer (3) on the transition layer (13) of the aluminum nitride/gallium nitride superlattice by adopting an MOCVD method; epitaxially growing a gallium nitride channel layer (4) on the gallium nitride buffer layer (3); epitaxially growing an aluminum nitride isolation layer (51) on the gallium nitride channel layer (4); epitaxially growing an AlGaN core barrier layer (52) on the AlGaN isolation layer (51); epitaxially growing a gallium nitride cap layer (53) on the core barrier layer (52) to make and form a first wafer (10); depositing a first silicon dioxide layer (21) on the upper surface of the first wafer (10) by adopting a PECVD method to form a second wafer (20); depositing a second silicon dioxide layer (32) on the upper surface of a silicon wafer (31) by adopting a PECVD method to form a third wafer (30); reversing the second wafer (20) by adopting a wafer chemical bonding technology, and bonding the surface of the first silicon dioxide layer (21) and the surface of the second silicon dioxide layer (32) together to form a fourth wafer (40); removing the high-resistance silicon substrate layer (11) in the fourth wafer (40) to form a sixth wafer (60); removing the aluminum nitride nucleation layer (12) from the sixth wafer (60) to form a seventh wafer (70); removing the aluminum nitride/gallium nitride superlattice transition layer (13) in the seventh wafer (70) to form an eighth wafer (80); depositing a first aluminum nitride layer (91) on the upper surface of the eighth wafer (80) to form a ninth wafer (90); depositing a second aluminum nitride layer (101) on the surface of a silicon substrate layer (1) to form a tenth wafer (100); bonding the surface of the first aluminum nitride layer (91) and the surface of the second aluminum nitride layer (101) together to form an eleventh wafer (110); removing the silicon wafer (31) layer in the eleventh wafer (110) to form a twelfth wafer (120); and removing the first silicon dioxide layer (21) and the second silicon dioxide layer (32) in the twelfth wafer (120) to obtain the silicon-based gallium nitride microwave device structure, wherein the high-heat-conductivity medium layer (2) comprises a first aluminum nitride layer (91) and a second aluminum nitride layer (101).
2. The material structure of the silicon-based gallium nitride microwave device with enhanced heat dissipation according to claim 1, wherein the thickness of the high thermal conductivity dielectric layer (2) is 20-20000 nm.
3. The heat dissipation enhanced silicon-based gallium nitride microwave device material structure according to claim 1, wherein the buffer layer (3) comprises gallium nitride, aluminum gallium nitride or aluminum nitride, and has a thickness of 100-5000 nm.
4. The heat dissipation enhanced silicon-based gallium nitride microwave device material structure according to claim 1, wherein the channel layer (4) is gallium nitride and has a thickness of 10-1000 nm.
5. The heat dissipation enhanced silicon-based gallium nitride microwave device material structure according to claim 1, wherein the composite barrier layer (5) comprises an isolation layer (51) and a core barrier layer (52), wherein,
the isolation layer (51) is positioned on the upper surface of the channel layer (4);
the core barrier layer (52) is positioned on the upper surface of the isolation layer (51).
6. The heat dissipation enhanced silicon-based gallium nitride microwave device material structure according to claim 1, wherein the composite barrier layer (5) comprises a core barrier layer (52) and a cap layer (53), wherein,
the core barrier layer (52) is positioned on the upper surface of the channel layer (4);
the cap layer (53) is located on the upper surface of the core barrier layer (52).
7. The heat dissipation enhanced silicon-based gallium nitride microwave device material structure according to claim 1, wherein the composite barrier layer (5) comprises an isolation layer (51), a core barrier layer (52) and a cap layer (53), wherein,
the isolation layer (51) is positioned on the upper surface of the channel layer (4);
the core barrier layer (52) is positioned on the upper surface of the isolation layer (51);
the cap layer (53) is located on the upper surface of the core barrier layer (52).
8. The heat dissipation enhanced silicon-based gallium nitride microwave device material structure according to any one of claims 5 or 7, wherein the isolation layer (51) is aluminum nitride, and the thickness is 0.5-1.5 nm.
9. The heat dissipation enhanced silicon-based gallium nitride microwave device material structure according to any one of claims 5-7, wherein the core barrier layer (52) is aluminum gallium nitride, wherein the composition of aluminum is 0.2-0.4, and the thickness is 10-30 nm;
or indium aluminum nitrogen, wherein the composition of indium is 0.1-0.2, and the thickness is 5-30 nm;
or aluminum nitride with the thickness of 2-10 nm.
10. The heat dissipation enhanced silicon-based gallium nitride microwave device material structure according to any one of claims 6 or 7, wherein the cap layer (53) is gallium nitride with a thickness of 1-3 nm;
or silicon nitride with a thickness of 1-10 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010339245.2A CN111653473B (en) | 2020-04-26 | 2020-04-26 | Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010339245.2A CN111653473B (en) | 2020-04-26 | 2020-04-26 | Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111653473A CN111653473A (en) | 2020-09-11 |
| CN111653473B true CN111653473B (en) | 2023-10-13 |
Family
ID=72344722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010339245.2A Active CN111653473B (en) | 2020-04-26 | 2020-04-26 | Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111653473B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113981444A (en) * | 2021-10-18 | 2022-01-28 | 北京大学东莞光电研究院 | Thin-layer device and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272104A (en) * | 1993-03-11 | 1993-12-21 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
| CN102064255A (en) * | 2010-12-10 | 2011-05-18 | 西安神光安瑞光电科技有限公司 | LED (Light Emitting Diode) and manufacturing method thereof |
| CN102569390A (en) * | 2010-12-24 | 2012-07-11 | 中国科学院微电子研究所 | High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof |
| CN104143567A (en) * | 2013-05-09 | 2014-11-12 | Lg伊诺特有限公司 | Semiconductor device and method of manufacturing the same |
| CN105140122A (en) * | 2015-08-10 | 2015-12-09 | 中国电子科技集团公司第五十五研究所 | Method for improving cooling performance of GaN high-electron mobility transistor (HEMT) device |
| CN107482032A (en) * | 2017-08-10 | 2017-12-15 | 佛山市国星半导体技术有限公司 | A kind of MicroLED chips for full-color display and preparation method thereof |
| CN108389903A (en) * | 2018-03-01 | 2018-08-10 | 中国科学院微电子研究所 | AlGaN/GaN high electron mobility transistor and preparation method with graphene heat dissipating layer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9142448B2 (en) * | 2011-11-04 | 2015-09-22 | The Silanna Group Pty Ltd | Method of producing a silicon-on-insulator article |
| CN108695341B (en) * | 2017-03-31 | 2021-01-26 | 环球晶圆股份有限公司 | Epitaxial substrate and method for manufacturing same |
-
2020
- 2020-04-26 CN CN202010339245.2A patent/CN111653473B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5272104A (en) * | 1993-03-11 | 1993-12-21 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
| CN102064255A (en) * | 2010-12-10 | 2011-05-18 | 西安神光安瑞光电科技有限公司 | LED (Light Emitting Diode) and manufacturing method thereof |
| CN102569390A (en) * | 2010-12-24 | 2012-07-11 | 中国科学院微电子研究所 | High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof |
| CN104143567A (en) * | 2013-05-09 | 2014-11-12 | Lg伊诺特有限公司 | Semiconductor device and method of manufacturing the same |
| CN105140122A (en) * | 2015-08-10 | 2015-12-09 | 中国电子科技集团公司第五十五研究所 | Method for improving cooling performance of GaN high-electron mobility transistor (HEMT) device |
| CN107482032A (en) * | 2017-08-10 | 2017-12-15 | 佛山市国星半导体技术有限公司 | A kind of MicroLED chips for full-color display and preparation method thereof |
| CN108389903A (en) * | 2018-03-01 | 2018-08-10 | 中国科学院微电子研究所 | AlGaN/GaN high electron mobility transistor and preparation method with graphene heat dissipating layer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111653473A (en) | 2020-09-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103715242B (en) | Semiconductor device | |
| Alomari et al. | AlGaN/GaN HEMT on (111) single crystalline diamond | |
| US7863624B2 (en) | Silicon carbide on diamond substrates and related devices and methods | |
| US11942518B2 (en) | Reduced interfacial area III-nitride material semiconductor structures | |
| Micovic et al. | AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy | |
| CN103066103B (en) | The substrate breakdown voltage of the group III-nitride on silicon substrate is improved one's methods | |
| US8558285B2 (en) | Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials | |
| US8878248B2 (en) | Semiconductor device and fabrication method | |
| US20150123139A1 (en) | High electron mobility transistor and method of manufacturing the same | |
| US20230402525A1 (en) | Manufacturing method for n-polar gan transistor structure and semiconductor structure | |
| CN100418199C (en) | Method for fabricating transistor of aluminum-gallium-nitrogen/gallium nitride with high electron mobility | |
| EP3764402A1 (en) | High electron mobility transistor and method of manufacturing the same | |
| US20220310796A1 (en) | Material structure for low thermal resistance silicon-based gallium nitride microwave and millimeter-wave devices and manufacturing method thereof | |
| US20140197462A1 (en) | III-Nitride Transistor with High Resistivity Substrate | |
| CN111653473B (en) | Silicon-based gallium nitride microwave device material structure with enhanced heat dissipation | |
| TWI523148B (en) | Method for increasing breakdown voltage of hemt device | |
| CN111863957A (en) | Normally-off high electron mobility transistor and manufacturing method thereof | |
| CN113555330A (en) | Gallium nitride material structure with back through hole for enhancing heat dissipation and preparation method thereof | |
| CN108493111B (en) | Method, semi-conductor device manufacturing method | |
| JP2022016950A (en) | Semiconductor device | |
| CN220233200U (en) | Gallium nitride epitaxial structure | |
| GB2504613A (en) | Integrated diamond p-channel FETs and GaN n-channel FETs | |
| US20230216471A1 (en) | Suppression of parasitic acoustic waves in integrated circuit devices | |
| JP2003133320A (en) | Thin film semiconductor epitaxial substrate and manufacturing method therefor | |
| TWI709242B (en) | Semiconductor devices and methods for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |