CN107482032A - A kind of MicroLED chips for full-color display and preparation method thereof - Google Patents
A kind of MicroLED chips for full-color display and preparation method thereof Download PDFInfo
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- CN107482032A CN107482032A CN201710681775.3A CN201710681775A CN107482032A CN 107482032 A CN107482032 A CN 107482032A CN 201710681775 A CN201710681775 A CN 201710681775A CN 107482032 A CN107482032 A CN 107482032A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 146
- 239000000758 substrate Substances 0.000 claims description 85
- 235000012431 wafers Nutrition 0.000 claims description 82
- 229910002601 GaN Inorganic materials 0.000 claims description 78
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 78
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 74
- 239000000377 silicon dioxide Substances 0.000 claims description 72
- 235000012239 silicon dioxide Nutrition 0.000 claims description 62
- 238000005498 polishing Methods 0.000 claims description 30
- 238000005516 engineering process Methods 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 23
- 238000002161 passivation Methods 0.000 claims description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 206010040844 Skin exfoliation Diseases 0.000 claims description 6
- 230000035618 desquamation Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 241001062009 Indigofera Species 0.000 claims description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000007771 core particle Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
A kind of MicroLED chips for full-color display provided by the invention and preparation method thereof, red bluish-green ray structure is formed on single led chip, RGB array and lenticule need not be set, single MicroLED chip can complete full-color light-emitting, pel spacing is small, high resolution, further, using wafer bond techniques, by blue light wafer, together with green glow wafer and feux rouges wafer bonding, form single chip, save wafer area, in addition, need to only a testing, sorting and encapsulation be carried out to single chip, use manpower and material resources sparingly, so as to be advantageous to scale of mass production.
Description
Technical field
The present invention relates to a kind of LED technology field, more particularly to a kind of MicroLED cores for full-color display
Piece and preparation method thereof.
Background technology
Micro- light-emittingdiode (Micro-light emitting diodes, MicroLED) is a kind of transmitting Display Technique,
High-contrast, high refresh rate and wide viewing angle can be provided.In addition, MicroLED can also provide the bright of broader colour gamut and Geng Gao
Degree, and there is low energy consumption, long lifespan, durability and environmental stability.In addition, MicroLED also support sensor and
Integrated, the ultra-thin display of the embedded sensing function of realization of circuit, such as fingerprint recognition and gesture control.
At present, MicroLED is in order to realize true color and wavelength homogeneity, it is necessary to enter respectively to the color core particles of red, green, blue three
Row divides Bin, and RGB array also needs to be posted the core particles of red, blue, green three colors by several times, it is also necessary to which the core particles of red, blue, green three colors are distinguished
Test analysis and encapsulation are carried out, workload is big, and production cost is high, hinders large-scale production, and each pixel is by RGB
Array forms, and resolution ratio is relatively low.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of MicroLED chips and its system for full-color display
Make method, improve resolution ratio, reduce cost.
In order to solve the above-mentioned technical problem, the invention provides a kind of making of the MicroLED chips for full-color display
Method, including：
Blue light wafer, green glow wafer and feux rouges wafer are provided, wherein, the blue light wafer includes the first substrate, outside blue light
Prolong layer, the first indium tin oxide layer and the first silicon dioxide layer, the green glow wafer includes the second substrate, green glow epitaxial layer, second
Indium tin oxide layer and the second silicon dioxide layer, the feux rouges wafer include the 3rd substrate, feux rouges epitaxial layer, the 3rd indium tin oxide layer
With the 3rd silicon dioxide layer；
First silicon dioxide layer and the second silicon dioxide layer are bonded together to form into one using wafer bond techniques, obtained
Blue green light wafer；
The second substrate is removed, and the 4th silicon dioxide layer is formed in the green glow epi-layer surface；
The 4th silicon dioxide layer and the 3rd silicon dioxide layer are bonded together to form into one using wafer bond techniques, obtained
Bluish-green feux rouges wafer；
The 3rd substrate is removed, forms MicroLED wafers；
Electrode is formed, wherein, the electrode includes being located at first electrode on the 3rd indium tin oxide layer, located at the second indium oxide
Second electrode in tin layers, the 3rd electrode on the first indium tin oxide layer and the 4th electrode on blue light epitaxial layer.
As the improvement of such scheme, the preparation method of the blue light wafer includes：
First substrate is provided；
Blue light epitaxial layer is formed on first substrate, the blue light epitaxial layer includes being sequentially arranged in the first substrate surface
Blue light n type gallium nitride layer, located at the blue light active layer of the blue light n type gallium nitride layer surface, located at the blue light active layer
The blue light p-type gallium nitride layer on surface；
The first indium tin oxide layer and the first silicon dioxide layer are sequentially formed in the blue light epi-layer surface；
The first silica layer surface is polished using polishing technology；
The preparation method of the green glow wafer includes：
Second substrate is provided；
Green glow epitaxial layer is formed on second substrate, the green glow epitaxial layer includes being sequentially arranged in the second substrate surface
Green glow n type gallium nitride layer, located at the green glow active layer of the green glow n type gallium nitride layer surface, located at the green glow active layer
The green glow p-type gallium nitride layer on surface；
The second indium tin oxide layer and the second silicon dioxide layer are sequentially formed in the green glow epi-layer surface；
The second silica layer surface is polished using polishing technology；
The preparation method of the feux rouges wafer includes：
3rd substrate is provided；
Feux rouges epitaxial layer is formed on the 3rd substrate, the feux rouges epitaxial layer includes being sequentially arranged in the 3rd substrate surface
Feux rouges n type gallium nitride layer, located at the feux rouges active layer of the feux rouges n type gallium nitride layer surface, located at the feux rouges active layer
The feux rouges p-type gallium nitride layer on surface；
The 3rd indium tin oxide layer and the 3rd silicon dioxide layer are sequentially formed in the feux rouges epi-layer surface；
The 3rd silica layer surface is polished using polishing technology.
As the improvement of such scheme, the preparation method of the electrode, including：
The MicroLED wafers are performed etching, through the feux rouges n type gallium nitride layer and are etched to the 3rd indium oxide
Tin layers, the first hole is formed, through the feux rouges n type gallium nitride layer and is etched to the second indium tin oxide layer, form the second hole,
Through the feux rouges n type gallium nitride layer and the first indium tin oxide layer is etched to, the 3rd hole is formed, through the feux rouges
N type gallium nitride layer is simultaneously etched to blue light n type gallium nitride layer, forms the 4th hole；
The MicroLED crystal column surfaces, in the first hole, in the second hole, shape in the 3rd hole and in the 4th hole
Into passivation layer；
The passivation layer is performed etching, through the passivation layer and correspondingly in the first hole, the second hole, the 3rd hole
With the 4th hole formation first electrode hole, second electrode hole, the 3rd electrode hole and the 4th electrode hole；
The deposited metal in the first electrode hole, second electrode hole, the 3rd electrode hole and the 4th electrode hole
Layer is correspondingly formed first electrode, second electrode, the 3rd electrode and the 4th electrode.
As the improvement of such scheme, the polishing technology is chemical polishing technology or mechanical polishing technology；Wherein,
The chemical polishing technology uses HF, NH4F、HNO3, one or more in NaOH, KOH
Solution is polished, and the mechanical polishing technology is polished using polishing powder and polishing fluid.
As the improvement of such scheme, first silicon dioxide layer and the second silicon dioxide layer are bonded together to form integral
Method includes：Blue light wafer and green glow wafer are dried first, room temperature is cooled to, then in 200-500 DEG C and 0.5-
Under conditions of 2.5Mpa, gaseous state NH is passed through4OH is bonded.
As the improvement of such scheme, the 4th silicon dioxide layer and the 3rd silicon dioxide layer are bonded together to form integral
Method includes：Blue green light wafer and feux rouges wafer are dried first, room temperature is cooled to, then in 200-500 DEG C and 0.5-
Under conditions of 2.5Mpa, gaseous state NH is passed through4OH is bonded.
As the improvement of such scheme, using laser lift-off technique or chemistry etch techniques by the green glow epitaxial layer and institute
State the second substrate desquamation；Wherein, the laser lift-off technique is peeled off using ultraviolet laser to the second substrate, the chemistry
Lithographic technique uses HF, HNO3、CH3COOH、NH4The KOH solution of one or more of solution or heat in OH is carried out to the second substrate
Peel off.
As the improvement of such scheme, using laser lift-off technique or chemistry etch techniques by the feux rouges n type gallium nitride
Layer and the 3rd substrate desquamation；Wherein, the laser lift-off technique is peeled off using ultraviolet laser to the 3rd substrate, institute
State chemistry etch techniques and use HF, HNO3、CH3COOH、NH4The KOH solution of one or more of solution or heat in OH serves as a contrast to the 3rd
Peeled off at bottom.
As the improvement of such scheme, first hole, the second hole, the preparation method of the 3rd hole and the 4th hole
Including：
The MicroLED wafers are performed etching, formation runs through the feux rouges n type gallium nitride layer, and extends to described the
The first reserved area, the second reserved area, the 3rd reserved area and the 4th reserved area of three indium tin oxide layers；
The 3rd indium tin oxide layer is carved along second reserved area, the 3rd reserved area and the 4th reserved area
Erosion, is etched to green glow n type gallium nitride layer, is correspondingly formed the 5th reserved area, the 6th reserved area and the 7th reserved area；
Green glow n type gallium nitride layer is carried out along the 5th reserved area, the 6th reserved area and the 7th reserved area
Etching, is etched to the second indium tin oxide layer, is correspondingly formed the 8th reserved area, the 9th reserved area and the tenth reserved area；
The second indium tin oxide layer is performed etching along the 9th reserved area and the tenth reserved area, is etched to first
Indium tin oxide layer, it is correspondingly formed the 11st reserved area and the 12nd reserved area；
The first indium tin oxide layer is performed etching along the 12nd reserved area, is etched to blue light n type gallium nitride layer,
It is correspondingly formed the 13rd reserved area；
First reserved area forms the first hole, and second reserved area, the 5th reserved area and the 8th are reserved
Region forms the second hole, the 3rd reserved area, the 6th reserved area, the 9th reserved area and the 11st reserved area group
Into the 3rd hole, the 4th reserved area, the 7th reserved area, the tenth reserved area, the 12nd reserved area and the 13rd
Reserved area forms the 4th hole.
Accordingly, present invention also offers a kind of MicroLED chips for full-color display, including：
First substrate, it is sequentially arranged in the blue light epitaxial layer, green glow epitaxial layer and feux rouges epitaxial layer of the first substrate surface；Its
In,
It is sequentially provided with from lower to upper between the blue light epitaxial layer and the green glow epitaxial layer positioned at the blue light epitaxial layer
First indium tin oxide layer, the first silicon dioxide layer, the second silicon dioxide layer and second indium tin oxide layer on surface；
It is sequentially provided with from lower to upper between the green glow epitaxial layer and the feux rouges epitaxial layer positioned at the green glow epitaxial layer
4th silicon dioxide layer, the 3rd silicon dioxide layer and the 3rd indium tin oxide layer on surface；
3rd indium tin oxide layer is provided with first electrode, and second indium tin oxide layer is provided with second electrode, institute
State the first indium tin oxide layer and be provided with the 3rd electrode, the blue light epitaxial layer is provided with the 4th electrode.
Implement the present invention, have the advantages that：
1st, a kind of MicroLED chips for full-color display provided by the invention and preparation method thereof, in single led core
Red bluish-green ray structure is formed on piece, without setting RGB array and lenticule, single MicroLED chip can be completed full-color
Luminous, pel spacing is small, high resolution.
2nd, a kind of MicroLED chips for full-color display provided by the invention and preparation method thereof, using wafer bonding
Technology, together with blue light wafer, green glow wafer and feux rouges wafer bonding, single chip is formed, saves wafer area, in addition,
Need to only a testing, sorting and encapsulation be carried out to single chip, used manpower and material resources sparingly, so as to be advantageous to scale of mass production.
Brief description of the drawings
Fig. 1 is a kind of preparation method flow chart of MicroLED chips for full-color display of the embodiment of the present invention；
Fig. 2 a are that a kind of MicroLED chips for full-color display of the embodiment of the present invention form blue light wafer, green glow crystalline substance
The structural representation of circle and feux rouges wafer；
Fig. 2 b are that a kind of MicroLED chips for full-color display of the embodiment of the present invention form the knot of blue green light wafer
Structure schematic diagram；
Fig. 2 c are that a kind of MicroLED chips for full-color display of the embodiment of the present invention form the 4th silicon dioxide layer
Structural representation；
Fig. 2 d are that a kind of MicroLED chips for full-color display of the embodiment of the present invention form bluish-green feux rouges wafer
Structural representation；
Fig. 2 e are that a kind of MicroLED chips for full-color display of the embodiment of the present invention form MicroLED wafers
Structural representation；
Fig. 2 f are that a kind of MicroLED chips for full-color display of the embodiment of the present invention form the first hole, the second hole
The structural representation in hole, the 3rd hole and the 4th hole；
Fig. 2 g are the schematic top plan view of Fig. 2 f MicroLED chips；
Fig. 2 h are that a kind of structure of MicroLED chips formation passivation layer for full-color display of the embodiment of the present invention is shown
It is intended to；
Fig. 2 i are a kind of MicroLED chips formation first electrode hole for full-color display of the embodiment of the present invention, the
The structural representation of two electrode holes, the 3rd electrode hole and the 4th electrode hole；
Fig. 2 j are the schematic top plan view of Fig. 2 i MicroLED chips；
Fig. 2 k are that a kind of MicroLED chips for full-color display of the embodiment of the present invention form first electrode, the second electricity
The structural representation of pole, the 3rd electrode and the 4th electrode；
Fig. 2 l are the schematic top plan view of Fig. 2 k MicroLED chips；
Fig. 3 is a kind of structural representation of MicroLED chips for full-color display of the embodiment of the present invention；
Fig. 4 is the schematic top plan view of Fig. 3 MicroLED chips.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
It is described in detail on step ground.
A kind of preparation method of MicroLED chips for full-color display
Present embodiments provide a kind of preparation method of the MicroLED chips for full-color display, its flow chart such as Fig. 1
It is shown, comprise the following steps：
S1：Blue light wafer, green glow wafer and feux rouges wafer are provided；
Wherein, the blue light wafer includes the first substrate, blue light epitaxial layer, the first indium tin oxide layer and the first silica
Layer, the green glow wafer includes the second substrate, green glow epitaxial layer, the second indium tin oxide layer and the second silicon dioxide layer, described red
Light wafer includes the 3rd substrate, feux rouges epitaxial layer, the 3rd indium tin oxide layer and the 3rd silicon dioxide layer.
As shown in Figure 2 a, blue light wafer 1 include the first substrate 101, the blue light epitaxial layer located at the surface of the first substrate 101,
The first indium tin oxide layer 105 located at blue light epi-layer surface and the first titanium dioxide located at the surface of the first indium tin oxide layer 105
Silicon layer 106.Wherein, shown blue light epitaxial layer includes the blue light n type gallium nitride layer 102 located at the surface of the first substrate 101, located at indigo plant
The blue light active layer 103 on the surface of light n type gallium nitride layer 102, the blue light p-type gallium nitride layer located at the surface of blue light active layer 103
104。
Green glow wafer 2 includes the second substrate 201, the green glow epitaxial layer located at the surface of the second substrate 201, located at green glow extension
Second indium tin oxide layer 205 of layer surface, the second silicon dioxide layer 206 located at the surface of the second indium tin oxide layer 205.Wherein,
The green glow epitaxial layer includes the green glow n type gallium nitride layer 202 located at the surface of the second substrate 201, located at green glow n type gallium nitride layer
The green glow active layer 203 on 202 surfaces, the green glow p-type gallium nitride layer 204 located at the surface of green glow active layer 203.
Blue light wafer 3 includes the 3rd substrate 301, the feux rouges epitaxial layer located at the surface of the 3rd substrate 301, located at feux rouges extension
3rd indium tin oxide layer 305 of layer surface, the 3rd silicon dioxide layer 306 located at the surface of the 3rd indium tin oxide layer 305.Wherein,
Shown 3rd epitaxial layer includes the feux rouges n type gallium nitride layer 302 located at the surface of the 3rd substrate 301, located at feux rouges n type gallium nitride layer
The feux rouges active layer 303 on 302 surfaces, the feux rouges p-type gallium nitride layer 304 located at the surface of feux rouges active layer 303.
Specifically, the preparation method for the blue light wafer that the embodiment of the present application provides, comprises the following steps：
First substrate is provided；
Blue light epitaxial layer is formed on first substrate, the blue light epitaxial layer includes being sequentially arranged in the first substrate surface
Blue light n type gallium nitride layer, located at the blue light active layer of the blue light n type gallium nitride layer surface, located at the blue light active layer
The blue light p-type gallium nitride layer on surface；
The first indium tin oxide layer and the first silicon dioxide layer are sequentially formed in the blue light epi-layer surface；
The first silica layer surface is polished using polishing technology；
The preparation method of the preparation method for the green glow wafer that the embodiment of the present application provides, comprises the following steps：
Second substrate is provided；
Green glow epitaxial layer is formed on second substrate, the green glow epitaxial layer includes being sequentially arranged in the second substrate surface
Green glow n type gallium nitride layer, located at the green glow active layer of the green glow n type gallium nitride layer surface, located at the green glow active layer
The green glow p-type gallium nitride layer on surface；
The second indium tin oxide layer and the second silicon dioxide layer are sequentially formed in the green glow epi-layer surface；
The second silica layer surface is polished using polishing technology；
The preparation method of the preparation method for the feux rouges wafer that the embodiment of the present application provides, comprises the following steps：
3rd substrate is provided；
Feux rouges epitaxial layer is formed on the 3rd substrate, the feux rouges epitaxial layer includes being sequentially arranged in the 3rd substrate surface
Feux rouges n type gallium nitride layer, located at the feux rouges active layer of the feux rouges n type gallium nitride layer surface, located at the feux rouges active layer
The feux rouges p-type gallium nitride layer on surface；
The 3rd indium tin oxide layer and the 3rd silicon dioxide layer are sequentially formed in the feux rouges epi-layer surface；
The 3rd silica layer surface is polished using polishing technology.
It should be noted that first substrate and the second substrate are Sapphire Substrate or silicon substrate, the 3rd substrate
For GaAs substrates.
It should be noted that the polishing technology is chemical polishing technology or mechanical polishing technology.Wherein, the chemistry is thrown
Light technology uses HF, NH4F、HNO3, one or more of solution in NaOH, KOH are polished.The mechanical polishing technology uses
Polishing powder and polishing fluid are polished.
S2：First silicon dioxide layer and the second silicon dioxide layer are bonded together to form into one, obtain blue green light wafer；
As shown in Figure 2 b, using wafer bond techniques by the silicon dioxide layer 206 of the first silicon dioxide layer 106 and second
One is bonded together to form, obtains blue green light wafer.
Specifically, the embodiment of the present application bonds together to form the silicon dioxide layer 206 of the first silicon dioxide layer 106 and second
The method of one includes：Blue light wafer 1 and green glow wafer 2 are dried first, room temperature is cooled to, then at 200-500 DEG C
Under conditions of 0.5-2.5Mpa, gaseous state NH is passed through4OH is bonded.
S3：The second substrate is removed, and the 4th silicon dioxide layer is formed in the green glow epi-layer surface；
As shown in Figure 2 c, by the green glow n type gallium nitride layer 202 and second substrate desquamation 201, the second substrate is removed
201, and form the 4th silicon dioxide layer 406 on the green glow epi-layer surface, the i.e. surface of green glow n type gallium nitride layer 202.
It should be noted that using laser lift-off technique or chemistry etch techniques by the green glow n type gallium nitride layer 202 with
Second substrate desquamation 201.Wherein, the laser lift-off technique is peeled off using ultraviolet laser to the second substrate 201,
The chemistry etch techniques use HF, HNO3、CH3COOH、NH4The KOH solution of one or more of solution or heat in OH is to second
Substrate 201 is peeled off.
S4：4th silicon dioxide layer and the 3rd silicon dioxide layer are bonded together to form into one, obtain bluish-green feux rouges wafer；
As shown in Figure 2 d, using wafer bond techniques by the 4th silicon dioxide layer 406 and the 3rd silicon dioxide layer 306
One is bonded together to form, obtains bluish-green feux rouges wafer.
Specifically, the embodiment of the present application bonds together to form the 4th silicon dioxide layer 406 and the 3rd silicon dioxide layer 306
The method of one includes：Blue green light wafer and feux rouges wafer 3 are dried first, room temperature is cooled to, then at 200-500 DEG C
Under conditions of 0.5-2.5Mpa, gaseous state NH is passed through4OH is bonded.
S5：The 3rd substrate is removed, forms MicroLED wafers；
As shown in Figure 2 e, the feux rouges n type gallium nitride layer 302 is peeled off with the 3rd substrate 301, removes the 3rd substrate
301, form MicroLED wafers.
It should be noted that using laser lift-off technique or chemistry etch techniques by the feux rouges n type gallium nitride layer 302 with
3rd substrate 301.Wherein, the laser lift-off technique is peeled off using ultraviolet laser to the 3rd substrate 301, described
Chemistry etch techniques use HF, HNO3、CH3COOH、NH4The KOH solution of one or more of solution or heat in OH is to the 3rd substrate
301 are peeled off.
S6：Form electrode；
Wherein, the electrode includes being located at first electrode on the 3rd indium tin oxide layer, on the second indium tin oxide layer
Second electrode, the 3rd electrode on the first indium tin oxide layer and the 4th electrode on blue light epitaxial layer.
As shown in Fig. 2 f and 2g, the preparation method of the electrode of the application, including：
S61：The MicroLED wafers are performed etching, through the feux rouges n type gallium nitride layer 302 and are etched to the 3rd
Indium tin oxide layer 305, the first hole 51 is formed, through the feux rouges n type gallium nitride layer 302 and is etched to the second indium tin oxide layer
205, the second hole 52 is formed, through the feux rouges n type gallium nitride layer 302 and is etched to the first indium tin oxide layer 105,
The 3rd hole 53 is formed, through the feux rouges n type gallium nitride layer 302 and is etched to blue light n type gallium nitride layer 102, forms the 4th
Hole 54.
Specifically, the making side for the first hole, the second hole, the 3rd hole and the 4th hole that the embodiment of the present application provides
Method, comprise the following steps：
S611：The MicroLED wafers are performed etching, formation runs through the feux rouges n type gallium nitride layer, and extends to
The first reserved area, the second reserved area, the 3rd reserved area and the 4th reserved area of 3rd indium tin oxide layer；
S612：Along second reserved area, the 3rd reserved area and the 4th reserved area to the 3rd indium tin oxide layer
Perform etching, be etched to green glow n type gallium nitride layer, be correspondingly formed the 5th reserved area, the 6th reserved area and the 7th trough
Domain；
S613：Along the 5th reserved area, the 6th reserved area and the 7th reserved area to green glow n type gallium nitride layer
Perform etching, be etched to the second indium tin oxide layer, be correspondingly formed the 8th reserved area, the 9th reserved area and the tenth trough
Domain；
S614：The second indium tin oxide layer is performed etching along the 9th reserved area and the tenth reserved area, etched
To the first indium tin oxide layer, the 11st reserved area and the 12nd reserved area are correspondingly formed；
S615：The first indium tin oxide layer is performed etching along the 12nd reserved area, is etched to the nitridation of blue light N-type
Gallium layer, it is correspondingly formed the 13rd reserved area；
First reserved area forms the first hole, and second reserved area and the 5th reserved area form the second hole
Hole, the 3rd reserved area, the 6th reserved area and the 8th reserved area the 3rd hole of composition, the 4th reserved area,
7th reserved area, the 9th reserved area and the tenth reserved area form the 4th hole.
It should be noted that in order to improve etching yield and easy to operation, the 5th reserved area area is less than second
Reserved area, the 6th reserved area area are less than the 3rd reserved area, and it is pre- that the 7th reserved area area is equal to the 4th
Stay region.In order to increase light-emitting area or save wafer area or be easy to technique to make, the 8th reserved area area is equal to
5th reserved area, the 9th reserved area area are equal to the 6th reserved area, and the tenth reserved area area is equal to institute
State the 7th reserved area.In order to improve etching yield and easy to operation, it is reserved that the 11st reserved area area is less than the 9th
Region, the 12nd reserved area area are less than the tenth reserved area.The 13rd reserved area area is equal to the 12nd
Reserved area.
S62：In the MicroLED crystal column surfaces, in the first hole, in the second hole, in the 3rd hole and the 4th hole
Interior formation passivation layer；
As shown in fig. 2h, using plasma enhancing chemical vapor deposition method, in the MicroLED crystal column surfaces, the
One hole, 51 interior, 52 interior, 53 interior and 54 interior formation passivation layer 6 of the 4th hole of the 3rd hole of the second hole；
Wherein, the passivation layer 6 is covered in MicroLED crystal column surfaces, including be covered in first hole 51, the
In two holes 52, in the 3rd hole 53 and in the 4th hole 54.Specifically, the passivation layer 6 is by SiOx、SiNx、Si(ON)x、
Al2O3、TiO2In one or more be made.The passivation layer 6 is in order that first electrode, second electrode, the 3rd electrode and
Mutually insulated between four electrodes.
S63：The passivation layer is performed etching, through the passivation layer and forms first electrode hole, second electrode hole
Hole, the 3rd electrode hole and the 4th electrode hole；
As shown in Figure 2 i and 2j, using inductively coupled plasma or reactive ion etching process, the passivation layer 6 is carried out
Etching, is formed through the passivation layer 6 and correspondingly in the first hole 51, the second hole 52, the 3rd hole 53 and the 4th hole 54
First electrode hole 61, second electrode hole 62, the 3rd electrode hole 63 and the 4th electrode hole 64.
S64：Form first electrode, second electrode, the 3rd electrode and the 4th electrode；
As shown in Fig. 2 k and 2l, using electron beam evaporation plating, magnetron sputtering, plating or chemical plating process, in the described first electricity
Deposited metal layer is correspondingly formed in pole hole 61, second electrode hole 62, the 3rd electrode hole 63 and the 4th electrode hole 64
One electrode 71, second electrode 72, the 3rd electrode 73 and the 4th electrode 74.
Referring to Fig. 3 and Fig. 4, the invention provides a kind of MicroLED chips for full-color display, including：
First substrate 101, it is sequentially arranged in the blue light epitaxial layer 100 on the surface of the first substrate 101, green glow epitaxial layer 200 and red
Light epitaxial layer 300；Wherein,
It is sequentially provided with from lower to upper positioned at the blue light between the blue light epitaxial layer 100 and the green glow epitaxial layer 200
First indium tin oxide layer 105, the first silicon dioxide layer 106, the second silicon dioxide layer 206 and second oxygen on the surface of epitaxial layer 100
Change indium tin layer 205；
It is sequentially provided with from lower to upper positioned at the green glow between the green glow epitaxial layer 200 and the feux rouges epitaxial layer 300
4th silicon dioxide layer 406, the 3rd silicon dioxide layer 306 and the 3rd indium tin oxide layer 305 on the surface of epitaxial layer 200；
3rd indium tin oxide layer 305 is provided with first electrode 71, and second indium tin oxide layer 205 is provided with second electrode
72, first indium tin oxide layer 105 is provided with the 3rd electrode 73, and the blue light epitaxial layer 100 is provided with the 4th electrode 74.
The blue light epitaxial layer 100 includes：Located at the blue light n type gallium nitride layer 102 of first substrate surface 101, if
Blue light active layer 103 in the surface of blue light n type gallium nitride layer 102, the blue light p-type gallium nitride located at the surface of blue light active layer 103
Layer 104.Specifically, the 4th electrode 74 is arranged on blue light n type gallium nitride layer 102.
The green glow epitaxial layer 200 includes：Green glow p-type gallium nitride layer 204 located at the surface of the second indium tin oxide layer 205,
Green glow active layer 203 located at the surface of green glow p-type gallium nitride layer 204, the green glow N-type located at the surface of green glow active layer 203 nitrogenize
Gallium layer 202.
The feux rouges epitaxial layer 300 includes：Feux rouges p-type gallium nitride layer 304 located at the surface of the 3rd indium tin oxide layer 305,
Feux rouges active layer 303 located at the surface of feux rouges p-type gallium nitride layer 304, the feux rouges N-type located at the surface of feux rouges active layer 303 nitrogenize
Gallium layer 302.
It should be noted that in order to protect MicroLED chips, short circuit between electrode, the feux rouges n type gallium nitride are prevented
302 surface of layer, the both sides of first electrode 71, the both sides of second electrode 72, the both sides of the 3rd electrode 73 and the both sides of the 4th electrode 74 are provided with blunt
Change layer 6.Preferably, the passivation layer 6 is by SiOx、SiNx、Si(ON)x、Al2O3、TiO2In one or more be made.
It should be noted that the single side size of first substrate is not more than 200 microns.
It should be noted that the first electrode 71, second electrode 72, the 3rd electrode 73 and the 4th electrode 74 by Cr, Ti,
One or more in Ni, Al, Au, Pt, Pd, Rh, W, Ag are made.
Implement the present invention, have the advantages that：
1st, a kind of MicroLED chips for full-color display provided by the invention and preparation method thereof, in single led core
Red bluish-green ray structure is formed on piece, without setting RGB array and lenticule, single MicroLED chip can be completed full-color
Luminous, pel spacing is small, high resolution.
2nd, a kind of MicroLED chips for full-color display provided by the invention and preparation method thereof, using wafer bonding
Technology, together with blue light wafer, green glow wafer and feux rouges wafer bonding, single chip is formed, saves wafer area, in addition,
Need to only a testing, sorting and encapsulation be carried out to single chip, used manpower and material resources sparingly, so as to be advantageous to scale of mass production.
The above disclosed power for being only a kind of preferred embodiment of the present invention, the present invention can not being limited with this certainly
Sharp scope, therefore the equivalent variations made according to the claims in the present invention, still belong to the scope that the present invention is covered.
Claims (10)
1. a kind of preparation method of MicroLED chips for full-color display, including：
Blue light wafer, green glow wafer and feux rouges wafer are provided, wherein, the blue light wafer include the first substrate, blue light epitaxial layer,
First indium tin oxide layer and the first silicon dioxide layer, the green glow wafer include the second substrate, green glow epitaxial layer, the second indium oxide
Tin layers and the second silicon dioxide layer, the feux rouges wafer include the 3rd substrate, feux rouges epitaxial layer, the 3rd indium tin oxide layer and the 3rd
Silicon dioxide layer；
First silicon dioxide layer and the second silicon dioxide layer are bonded together to form into one using wafer bond techniques, obtained bluish-green
Light wafer；
The second substrate is removed, and the 4th silicon dioxide layer is formed in the green glow epi-layer surface；
The 4th silicon dioxide layer and the 3rd silicon dioxide layer are bonded together to form into one using wafer bond techniques, obtained bluish-green
Feux rouges wafer；
The 3rd substrate is removed, forms MicroLED wafers；
Electrode is formed, wherein, the electrode includes being located at first electrode on the 3rd indium tin oxide layer, located at the second indium tin oxide layer
On second electrode, the 3rd electrode on the first indium tin oxide layer and the 4th electrode on blue light epitaxial layer.
2. preparation method according to claim 1, it is characterised in that the preparation method of the blue light wafer includes：
First substrate is provided；
Blue light epitaxial layer is formed on first substrate, the blue light epitaxial layer includes being sequentially arranged in the indigo plant of the first substrate surface
Light n type gallium nitride layer, located at the blue light active layer of the blue light n type gallium nitride layer surface, located at the blue light active layer surface
Blue light p-type gallium nitride layer；
The first indium tin oxide layer and the first silicon dioxide layer are sequentially formed in the blue light epi-layer surface；
The first silica layer surface is polished using polishing technology；
The preparation method of the green glow wafer includes：
Second substrate is provided；
Green glow epitaxial layer is formed on second substrate, the green glow epitaxial layer includes being sequentially arranged in the green of the second substrate surface
Light n type gallium nitride layer, located at the green glow active layer of the green glow n type gallium nitride layer surface, located at the green glow active layer surface
Green glow p-type gallium nitride layer；
The second indium tin oxide layer and the second silicon dioxide layer are sequentially formed in the green glow epi-layer surface；
The second silica layer surface is polished using polishing technology；
The preparation method of the feux rouges wafer includes：
3rd substrate is provided；
Feux rouges epitaxial layer is formed on the 3rd substrate, the feux rouges epitaxial layer includes being sequentially arranged in the red of the 3rd substrate surface
Light n type gallium nitride layer, located at the feux rouges active layer of the feux rouges n type gallium nitride layer surface, located at the feux rouges active layer surface
Feux rouges p-type gallium nitride layer；
The 3rd indium tin oxide layer and the 3rd silicon dioxide layer are sequentially formed in the feux rouges epi-layer surface；
The 3rd silica layer surface is polished using polishing technology.
3. preparation method according to claim 2, it is characterised in that the preparation method of the electrode, including：
The MicroLED wafers are performed etching, through the feux rouges n type gallium nitride layer and are etched to the 3rd indium tin oxide layer,
The first hole is formed, through the feux rouges n type gallium nitride layer and is etched to the second indium tin oxide layer, the second hole is formed, runs through
The feux rouges n type gallium nitride layer is simultaneously etched to the first indium tin oxide layer, the 3rd hole is formed, through the feux rouges N-type
Gallium nitride layer is simultaneously etched to blue light n type gallium nitride layer, forms the 4th hole；
The MicroLED crystal column surfaces, formed in the first hole, in the second hole, in the 3rd hole and in the 4th hole it is blunt
Change layer；
The passivation layer is performed etching, through the passivation layer and correspondingly in the first hole, the second hole, the 3rd hole and
Four hole formation first electrode holes, second electrode hole, the 3rd electrode hole and the 4th electrode hole；
Deposited metal layer is right in the first electrode hole, second electrode hole, the 3rd electrode hole and the 4th electrode hole
First electrode, second electrode, the 3rd electrode and the 4th electrode should be formed.
4. preparation method according to claim 2, it is characterised in that the polishing technology is chemical polishing technology or machinery
Polishing technology；Wherein, the chemical polishing technology uses HF, NH4F、HNO3, one or more of solution in NaOH, KOH carry out
Polishing, the mechanical polishing technology are polished using polishing powder and polishing fluid.
5. preparation method according to claim 1, it is characterised in that by first silicon dioxide layer and the second titanium dioxide
Silicon layer, which bonds together to form integral method, to be included：Blue light wafer and green glow wafer are dried first, are cooled to room temperature, Ran Hou
Under conditions of 200-500 DEG C and 0.5-2.5Mpa, gaseous state NH is passed through4OH is bonded.
6. preparation method according to claim 1, it is characterised in that by the 4th silicon dioxide layer and the 3rd titanium dioxide
Silicon layer, which bonds together to form integral method, to be included：Blue green light wafer and feux rouges wafer are dried first, are cooled to room temperature, then
Under conditions of 200-500 DEG C and 0.5-2.5Mpa, gaseous state NH is passed through4OH is bonded.
7. preparation method according to claim 1, it is characterised in that will using laser lift-off technique or chemistry etch techniques
The green glow epitaxial layer and second substrate desquamation；Wherein, the laser lift-off technique is served as a contrast using ultraviolet laser to second
Bottom is peeled off, and the chemistry etch techniques use HF, HNO3、CH3COOH、NH4One or more of solution in OH or heat
KOH solution is peeled off to the second substrate.
8. preparation method according to claim 1, it is characterised in that will using laser lift-off technique or chemistry etch techniques
The feux rouges n type gallium nitride layer and the 3rd substrate desquamation；Wherein, the laser lift-off technique using ultraviolet laser to the
Three substrates are peeled off, and the chemistry etch techniques use HF, HNO3、CH3COOH、NH4One or more of solution or heat in OH
KOH solution the 3rd substrate is peeled off.
9. preparation method according to claim 3, it is characterised in that first hole, the second hole, the 3rd hole and
The preparation method of 4th hole includes：
The MicroLED wafers are performed etching, formation runs through the feux rouges n type gallium nitride layer, and extends to the 3rd oxygen
Change the first reserved area, the second reserved area, the 3rd reserved area and the 4th reserved area of indium tin layer；
The 3rd indium tin oxide layer is performed etching along second reserved area, the 3rd reserved area and the 4th reserved area,
Green glow n type gallium nitride layer is etched to, is correspondingly formed the 5th reserved area, the 6th reserved area and the 7th reserved area；
Green glow n type gallium nitride layer is performed etching along the 5th reserved area, the 6th reserved area and the 7th reserved area,
The second indium tin oxide layer is etched to, is correspondingly formed the 8th reserved area, the 9th reserved area and the tenth reserved area；
The second indium tin oxide layer is performed etching along the 9th reserved area and the tenth reserved area, is etched to the first oxidation
Indium tin layer, it is correspondingly formed the 11st reserved area and the 12nd reserved area；
The first indium tin oxide layer is performed etching along the 12nd reserved area, is etched to blue light n type gallium nitride layer, it is corresponding
Form the 13rd reserved area；
First reserved area forms the first hole, second reserved area, the 5th reserved area and the 8th reserved area
Form the second hole, the 3rd reserved area, the 6th reserved area, the 9th reserved area and the 11st reserved area composition the
Three holes, the 4th reserved area, the 7th reserved area, the tenth reserved area, the 12nd reserved area and the 13rd are reserved
Region forms the 4th hole.
10. a kind of MicroLED chips for full-color display, including：First substrate, it is sequentially arranged in the indigo plant of the first substrate surface
Light epitaxial layer, green glow epitaxial layer and feux rouges epitaxial layer；Wherein,
It is sequentially provided with from lower to upper between the blue light epitaxial layer and the green glow epitaxial layer positioned at the blue light epi-layer surface
The first indium tin oxide layer, the first silicon dioxide layer, the second silicon dioxide layer and the second indium tin oxide layer；
It is sequentially provided with from lower to upper between the green glow epitaxial layer and the feux rouges epitaxial layer positioned at the green glow epi-layer surface
The 4th silicon dioxide layer, the 3rd silicon dioxide layer and the 3rd indium tin oxide layer；
3rd indium tin oxide layer is provided with first electrode, and second indium tin oxide layer is provided with second electrode, and described
One indium tin oxide layer is provided with the 3rd electrode, and the blue light epitaxial layer is provided with the 4th electrode.
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