CN106611809B - A kind of compound substrate preparation method with isolated protective layer for GaN growth - Google Patents
A kind of compound substrate preparation method with isolated protective layer for GaN growth Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Abstract
A kind of compound substrate preparation method with isolated protective layer for GaN growth includes the following steps：Epitaxial growth GaN epitaxial layer obtains process for sapphire-based GaN compound substrates on a sapphire substrate；GaN epitaxial layer surface in process for sapphire-based GaN compound substrates prepares isolated protective layer, and isolated protective layer is connected on interim transfer substrate using bonding agent, removes former Sapphire Substrate；Bonding medium layer is prepared respectively in GaN epitaxial layer and thermal conductivity transfer substrate, and GaN epitaxial layer and thermal conductivity, which are then shifted substrate, by the bonding medium layer is bonded, and realizes that being bonded for substrate is shifted in GaN epitaxial layer surface with thermal conductivity；Substrate is shifted in bonding process temporarily to fall off, retains or remove isolated protective layer, to obtain corresponding GaN base compound substrate.The present invention avoids the surface damage of GaN epitaxial layer in technical process, improves yields and homoepitaxy quality by the way that isolated protective layer is arranged.
Description
Technical field
The present invention relates to a kind of compound substrates and preparation method with isolated protective layer for GaN growth.
Background technology
For crystalline epitaxial, no matter from epitaxial growth theoretically or the developing history of semiconductor epitaxial technology,
All verified homoepitaxy is optimal selection.Since preparing for GaN body monocrystalline is extremely difficult, large size single crystal GaN is difficult to directly
It obtains, and expensive, the epitaxial growth of GaN material system is mainly based upon the heterogeneous epitaxial technology of big mismatch.In the recent period,
GaN substrate technology of preparing has large increase so that GaN epitaxy has returned homoepitaxy, can effectively improve GaN later stage extensions
Crystal quality, but GaN single crystal substrate holds at high price, and becomes the main problem for limiting its overall application.
Homoepitaxy advantage and control cost in order to balance, some research institution has begun to focus on is turned using substrate
GaN epitaxy single crystalline layer is transferred on the substrate of high heat conductance high conductivity by shifting technology, prepares the GaN composite linings of thermal conductivity
Bottom.Number of patent application is：201210068033.0 being with number of patent application：201210068026.0 first patent disclosure one
Kind is new to be prepared with micro-processing technology in conjunction with MOCVD epitaxy technology, HVPE epitaxy technologies, laser lift-off technique, bonding techniques
The compound lining material product and preparation method of type.The compound substrate had both taken into account the required homoepitaxy of GaN epitaxy, improved
Crystal quality, and vertical structure LED can be directly prepared, but exist when preparing compound substrate of the gallium polarity for GaN growth
Following problem：1) medium bonding and laser lift-off certain damage can be caused to GaN film, dramatically increase dislocation density and
The crystal defects such as point defect, the final performance and stability for influencing device；2) in bonding process, bonding agent is in GaN surface high-temps
The pollutants such as carbon particle can be formed after carbonization so that GaN film easy tos produce the gross imperfections such as crackle and bubbling, destroys its surface
Pattern, increases the difficulty of homoepitaxy, and pollutant can diffuse to form crystal defect with pyroprocess to crystals, increase
Add device creepage, seriously affects the performance and yield rate of device；3) in bonding process, bonding agent generates in carbonisation
Very big stress can cause residual stress in substrate larger, to influence crystal quality and follow-up homoepitaxy effect.
Invention content
The technical problem to be solved in the present invention is to provide a kind of compound substrates with isolated protective layer for GaN growth
Preparation method avoids the surface damage of GaN epitaxial layer in technical process, improves yields and homoepitaxy quality.
In order to solve the above-mentioned technical problem, the present invention takes following technical scheme：
A kind of compound substrate preparation method with isolated protective layer for GaN growth includes the following steps：
S11, on a sapphire substrate epitaxial growth GaN epitaxial layer obtain process for sapphire-based GaN compound substrates；
S12, the GaN epitaxial layer surface in process for sapphire-based GaN compound substrates prepare isolated protective layer, will using bonding agent
Isolated protective layer is connected on interim transfer substrate, removes former Sapphire Substrate；
S13 prepares bonding medium layer in GaN epitaxial layer and thermal conductivity transfer substrate, then passes through the bonding respectively
GaN epitaxial layer and thermal conductivity transfer substrate are bonded by dielectric layer, realize that GaN epitaxial layer surface is served as a contrast with thermal conductivity transfer
The bonding at bottom；
S14 shifts substrate in bonding process and falls off temporarily, to the GaN epitaxial layer surface in the compound substrate that is obtained
Isolated protective layer is prepared into graphical periodic structure using dry or wet etch technique, obtains the GaN with isolated protective layer
Base compound substrate.
A kind of compound substrate preparation method with isolated protective layer for GaN growth includes the following steps：
S21, on a sapphire substrate epitaxial growth GaN epitaxial layer obtain process for sapphire-based GaN compound substrates；
S22, the GaN epitaxial layer surface in process for sapphire-based GaN compound substrates prepare isolated protective layer, will using bonding agent
Isolated protective layer is connected on interim transfer substrate, removes former Sapphire Substrate；
S23 prepares bonding medium layer in GaN epitaxial layer and thermal conductivity transfer substrate, then passes through the bonding respectively
GaN epitaxial layer and thermal conductivity transfer substrate are bonded by dielectric layer, realize that GaN epitaxial layer surface is served as a contrast with thermal conductivity transfer
The bonding at bottom；
S24 shifts substrate in bonding process and falls off temporarily, is carried out to the GaN composite substrate epi-layer surface obtained rotten
Etching off removes isolated protective layer, obtains the GaN base compound substrate of removal isolated protective layer.
The isolated protective layer is single layer, bilayer, multilayer or composition graded bedding structure or patterned stratiform
The multilayered structure that structure or layer structure be combined with each other with graphic structure.
The isolated protective layer is to be patterned before substrate transfer or later processing, the figure of the isolated protective layer
Shape turns to cone, cylinder, trapezoidal truncated cone-shaped, yurt shape, triangular pyramidal, square taper, square column type, triangle fang platform type, ladder
Shape fang platform type, five taper, hexagonal column shape, trapezoidal six side platforms shape, 12 sides cone in taper, five side column shapes, trapezoidal five side platforms shape, six
Shape, 12 side column shapes, the polygonal cone of trapezoidal 12 side platform shape or Polygonal column shape or trapezoidal polygon shape periodic shapes.
The dry etch process such as ICP, HVPE, MOCVD can be used in the graphical of the isolated protective layer, can also be to use
The wet-etching technologies such as conventional soln burn into photoelectrochemical etching, electrodeless corrosion.
The insulation blocking layer material is AlN, ZnO, SiO2、SiNx, any one in SiC, TiC and InN, either
Any one elemental metals in Mo, Au, Ti, Cu, Pd, W, Ni, Cr, In, Sn or two or more alloy.
The thickness of the isolated protective layer is 1 nanometer to 100 microns, preferably 10-2000 nanometers.
The isolated protective layer is steamed using HVPE, MOCVD, PECVD, electron beam evaporation, magnetron sputtering, plating, Vacuum Heat
Hair or wet processing are prepared on the surface of GaN epitaxial layer.
The thickness of the GaN epitaxial layer is 10 nanometers to 100 microns, and preferably 3 microns to 50 microns.
The GaN epitaxial layer is any one either arbitrary two kinds or three in GaN film, AlN films and InN films
The alloy firm of kind.
The bonding medium layer thickness is 10 nanometers to 100 microns, which is molybdenum (Mo), golden (Au), titanium
(Ti), copper (Cu), palladium (Pd), platinum (Pt), tungsten (W), nickel (Ni) and any one elemental metals in chromium (Cr) or two kinds or
Two or more alloys or bonding medium layer be resin matrix and conducting particles silver-colored (Ag), golden (Au), copper (Cu), aluminium (Al),
The conducting polymer of one or both of zinc (Zn), iron (Fe), nickel (Ni) and graphite (C) or two or more compositions, Huo Zhejian
Close dielectric layer be silver-colored (Ag), golden (Au), copper (Cu), aluminium (Al), zinc (Zn), iron (Fe), nickel (Ni) and one kind in graphite (C) or
The electrocondution slurry or bonding medium that the particle of two or more conducting particles is formed with adhesive, solvent, auxiliary agent
Layer is silicate-base high-temperature electric conduction glue or bonding medium layer is that the metals such as nickel (Ni), chromium (Cr), silicon (Si) and boron (B) are formed
High temperature alloy slurry.
The thermal conductivity bonding medium layer then utilizes magnetron sputtering, plating, vacuum thermal evaporation or wet processing, prepares
On the surface of GaN epitaxial layer and thermal conductivity substrate.
The thickness of the thermal conductivity transfer substrate is 10 microns to 3000 microns, and fusing point is higher than 1000 DEG C and with good
Thermal conductivity, it is molybdenum (Mo), copper (Cu), titanium (Ti), tungsten (W), palladium (Pd), platinum (Pt) nickel which, which shifts substrate,
(Ni) and any one elemental metals in chromium (Cr) or two or more alloy or thermal conductivity transfer substrate are
Si crystal, SiC crystal or AlSi crystal.
For the present invention by introducing isolated protective layer between GaN epitaxial layer and bonding agent, this isolated protective layer can be effective
Prevent damage of the substrate transfer process to GaN film, improve yields and homoepitaxy quality, and can balanced residue stress and
Light extraction efficiency, the pollutant that isolated-adhesive generates during high temperature cabonization are improved, and can effectively alleviate bonding agent solid
To the harmful stress of the application of GaN single crystal layer during change.Isolated protective layer can remove after the completion of underlay producing technique, or
Person, finally can also be in the substrate eventually as the speculum knot of compound substrate by being patterned design to isolated protective layer
Structure, or serve as the buffer layer structure of compound substrate secondary epitaxy growth.
The present invention is that isolated protective layer, protection are used in substrate transfer process after Sapphire Substrate epitaxial growth
GaN epitaxial layer is not damaged by substrate transfer process, and the compound substrate being prepared is suitable for high quality homoepitaxy and directly
Vertical structure LED device is prepared, low stress and small warped state are provided simultaneously with, the GaN composite linings that transfer is realized can be significantly improved
Properties, GaN homoepitaxies quality and the later stage chip technology difficulty at bottom, can effective control cost, have it is larger
Development potentiality and market prospects.
Description of the drawings
Attached drawing 1 is that the present invention prepares the composite substrate structure schematic diagram for retaining isolated protective layer；
Attached drawing 2 is that the present invention prepares the composite substrate structure schematic diagram for removing isolated protective layer；
Attached drawing 3-1 is one preparation process schematic diagram of the embodiment of the present invention；Attached drawing 3-2 is one preparation process of the embodiment of the present invention
Schematic diagram；Attached drawing 3-3 is one preparation process schematic diagram of the embodiment of the present invention；Attached drawing 3-4 is one preparation process of the embodiment of the present invention
Schematic diagram；Attached drawing 3-5 is one preparation process schematic diagram of the embodiment of the present invention；
Attached drawing 4-1 is two preparation process schematic diagram of the embodiment of the present invention；Attached drawing 4-2 is two preparation process of the embodiment of the present invention
Schematic diagram；Attached drawing 4-3 is two preparation process schematic diagram of the embodiment of the present invention；
Attached drawing 5 is three structural schematic diagram of the embodiment of the present invention；
Attached drawing 6 is four structural schematic diagram of the embodiment of the present invention.
Specific implementation mode
For the ease of the understanding of those skilled in the art, the invention will be further described below in conjunction with the accompanying drawings.
A kind of compound substrate preparation method with isolated protective layer for GaN growth includes the following steps：
S11, on a sapphire substrate epitaxial growth GaN epitaxial layer obtain process for sapphire-based GaN compound substrates；
S12, the GaN epitaxial layer surface in process for sapphire-based GaN compound substrates prepare isolated protective layer, will using bonding agent
Isolated protective layer is connected on interim transfer substrate, removes former Sapphire Substrate；
S13 prepares bonding medium layer in GaN epitaxial layer and thermal conductivity transfer substrate, then passes through the bonding respectively
GaN epitaxial layer and thermal conductivity transfer substrate are bonded by dielectric layer, realize that GaN epitaxial layer surface is served as a contrast with thermal conductivity transfer
The bonding at bottom；
S14 shifts substrate in bonding process and falls off temporarily, to the GaN epitaxial layer surface in the compound substrate that is obtained
Isolated protective layer is prepared into graphical periodic structure using dry or wet etch technique, obtains the GaN with isolated protective layer
Base compound substrate, as shown in Fig. 1.
A kind of compound substrate preparation method with isolated protective layer for GaN growth includes the following steps：
S21, on a sapphire substrate epitaxial growth GaN epitaxial layer obtain process for sapphire-based GaN compound substrates；
S22, the GaN epitaxial layer surface in process for sapphire-based GaN compound substrates prepare isolated protective layer, will using bonding agent
Isolated protective layer is connected on interim transfer substrate, removes former Sapphire Substrate；
S23 prepares bonding medium layer in GaN epitaxial layer and thermal conductivity transfer substrate, then passes through the bonding respectively
GaN epitaxial layer and thermal conductivity transfer substrate are bonded by dielectric layer, realize that GaN epitaxial layer surface is served as a contrast with thermal conductivity transfer
The bonding at bottom；
S24 shifts substrate in bonding process and falls off temporarily, is carried out to the GaN composite substrate epi-layer surface obtained rotten
Etching off removes isolated protective layer, obtains the GaN base compound substrate of removal isolated protective layer, as shown in Fig. 2.
By both the above preparation method, after the completion of preparation, optionally retain or remove isolated protective layer.
The isolated protective layer is single layer, bilayer, multilayer or composition graded bedding structure or patterned stratiform
The multilayered structure that structure or layer structure be combined with each other with graphic structure.
The isolated protective layer can be that substrate transfer process is patterned processing, the isolated protective layer before or later
Be patterned into cone, yurt shape, cylinder, trapezoidal truncated cone-shaped, triangular pyramidal, square taper, square column type, triangle fang platform
Type, trapezoidal fang platform type, five in taper, five side column shapes, trapezoidal five side platforms shape, six taper, hexagonal column shape, trapezoidal six side platforms shape,
12 side tapers, 12 side column shapes, the polygonal cone of trapezoidal 12 side platform shape or Polygonal column shape or trapezoidal polygon shape periodic shapes, or
Person is other shapes, be will not enumerate herein, it should be noted that it is listed above not be limit, actual production when
It waits, flexibly selection setting can be carried out according to actual use situation.
The graphical of the isolated protective layer can be using dry etch process such as ICP, HVPE, MOCVD, can also be to make
With wet-etching technologies such as conventional soln burn into photoelectrochemical etching, electrodeless corrosion.
The insulation blocking layer material is AlN, ZnO, SiO2、SiNx, any one in SiC, TiC and InN, either
Any one elemental metals in Mo, Au, Ti, Cu, Pd, W, Ni, Cr, In, Sn or two or more alloy.
The thickness of the isolated protective layer is 1 nanometer to 100 microns, and preferably 10-2000 nanometers.Isolated protective layer
Using HVPE, MOCVD, PECVD, electron beam evaporation, magnetron sputtering, plating, vacuum thermal evaporation or wet processing, prepare in GaN
The surface of epitaxial layer.
The thickness of the GaN epitaxial layer is 10 nanometers to 100 microns, and preferably 3 microns to 50 microns.GaN epitaxy
Layer is any one either arbitrary two kinds or three kinds alloy firm in GaN film, AlN films and InN films.
In addition, bonding medium layer thickness is 10 nanometers to 100 microns, which is molybdenum (Mo), golden (Au), titanium
(Ti), copper (Cu), palladium (Pd), platinum (Pt), tungsten (W), nickel (Ni) and any one elemental metals in chromium (Cr) or two kinds or
Two or more alloys or bonding medium layer be resin matrix and conducting particles silver-colored (Ag), golden (Au), copper (Cu), aluminium (Al),
The conducting polymer of one or both of zinc (Zn), iron (Fe), nickel (Ni) and graphite (C) or two or more compositions, Huo Zhejian
Close dielectric layer be silver-colored (Ag), golden (Au), copper (Cu), aluminium (Al), zinc (Zn), iron (Fe), nickel (Ni) and one kind in graphite (C) or
The electrocondution slurry or bonding medium that the particle of two or more conducting particles is formed with adhesive, solvent, auxiliary agent
Layer is silicate-base high-temperature electric conduction glue or bonding medium layer is that the metals such as nickel (Ni), chromium (Cr), silicon (Si) and boron (B) are formed
High temperature alloy slurry.
Thermal conductivity bonding medium layer then utilizes magnetron sputtering, plating, vacuum thermal evaporation or wet processing, prepares in GaN
The surface of epitaxial layer and thermal conductivity substrate.The thickness that thermal conductivity shifts substrate is 10 microns to 3000 microns, and fusing point is higher than
1000 DEG C and have good heat conductive electric conductivity, the thermal conductivity shift substrate be molybdenum (Mo), palladium (Pd), platinum (Pt), copper (Cu),
Titanium (Ti), tungsten (W), nickel (Ni) and any one elemental metals in chromium (Cr) or two or more alloy, or lead
Thermal conductivity electrotransfer substrate is Si crystal, SiC crystal or AlSi crystal.
Make supplement below with specific embodiment to illustrate.
Embodiment one
Use SiNXFor film as isolated protective layer, thermal conductivity shifts substrate using WCu alloy substrates, bonding medium layer
It is made of Au materials, is used to prepare GaN base compound substrate.
S21 utilizes 1.5 microns thick of MOCVD technology growths using 2 inches 430 microns thick of tablet Sapphire Substrate
GaN epitaxial layer.
S22 grows one layer of 1 micron of thick SiO using PECVD technique on the GaN epitaxial layer surface of above-mentioned growth2Film,
And utilize photoetching and dry etching technology by SiO2Thin layer be prepared into the period be 3 microns, it is 2.6 microns of bottom diameter, 1.8 microns high
Conical periodic structure.As shown in figure 3-1.To expose GaN epitaxial layer surface at circular cone figure spacing.This periodic structure is
It can be used as reflecting layer.
Above-mentioned GaN epitaxial layer is continued to thicken to 4.5um in MOCVD by S23, and reusing HVPE technology growths will be outside GaN
Prolong layer to thicken to 25 microns, as shown in figure 3-2.
The good GaN epitaxial layer surface of above-mentioned growth is continued with PECVD technique and grows one layer 10 microns thick by S24
SiNXFilm is adhered to using 502 Instant cements 2 inches 400 microns of monocrystalline as isolated protective layer, by this insulation blocking level
On Si substrates, substrate is shifted using Si substrates as interim, then Sapphire Substrate is peeled off by laser lift-off technique, it is only surplus
Lower GaN epitaxial layer and the 10 microns of thick SiN being bonded on a si substrateXFilm, as shown in attached drawing 3-3 and 3-4.
The Au bondings of S25, GaN epitaxial layer surface and WCu alloy substrates surface while 1 micron of vapor deposition on a si substrate are situated between
Matter layer.Then under 300 degree, 10 tons of pressure, Si substrates and GaN epitaxial layer are bonded together by 120 minutes.Bonding finishes
Afterwards, 502 Instant cements can be carbonized at high temperature, and therefore, the connection of Si substrates and GaN/WCu compound substrates can be automatically separated.
S26 passes through the above-mentioned compound substrate surface SiN of HF erosion removalsxIsolated protective layer, the compound substrate include one layer
The mass ratio of 150 microns thick of WCu alloy substrates, W and Cu are 20% to 80%, pass through AuAu bondings and one layer 25 microns thick
GaN epitaxial layer is bonded together, and after suitably cleaning, obtains using SiNXFilm is completed as isolated protective layer and in technique
It removes afterwards, the GaN base compound substrate of the WCu metal substrates AuAu bondings with DBR mirror structures, as in Figure 3-5.
Embodiment two
Use band graphic structure SiO2As isolated protective layer, thermal conductivity shifts substrate and uses MoCu metal substrates, key
It closes dielectric layer and uses NiPt alloy.
S11 utilizes 4.5 microns thick of MOCVD technology growths using 4 inches 430 microns thick of tablet Sapphire Substrate
GaN epitaxial layer.
Above-mentioned GaN epitaxial layer is continuing with HVPE technology growths and thickened to 30 microns, as shown in Fig. 4-1 by S12.
The good GaN epitaxial layer of above-mentioned growth is continued with magnetron sputtering technique and grows one layer of 2 microns of thick SiO by S132
Film is as isolated protective layer, as shown in the Fig. 4-2.This insulation blocking level is adhered to 4 inch 800 using 502 Instant cements again
On the AlN ceramic substrate of micron.Sapphire Substrate is peeled off by laser lift-off technique again, it is only remaining to be bonded in AlN ceramic
GaN epitaxial layer on piece substrate and 1 micron of SiO2Film.
S14, the faces GaN of the GaN epitaxial layer on AlN ceramic substrate and MoCu metal substrate surfaces steam 500 nanometers simultaneously
Ni and 3 micron of Pt as bonding medium layer.Then it under 600 DEG C, 8 tons of pressure, was bonded together by 2 hours.Bonding
In the process, 502 Instant cements can be carbonized at high temperature, and therefore, the connection of AlN ceramic substrate and GaN/MoCu compound substrates can be automatic
Separation.
S15 recycles photoetching and dry etching technology by SiO2Thin layer be prepared into the period be 3.5 microns, bottom diameter 3 is micro-
Rice, high 2 microns of conical periodic structure will expose the surfaces GaN as reflection layer structure at circular cone figure spacing.This is compound
Substrate includes one layer 250 microns thick of MoCu alloy substrates, and the mass ratio of Mo and Cu are 20% to 80%.By NiPt bonding and
One layer of 30 microns of thick GaN epitaxial layer are bonded together, and after suitably cleaning, obtain using SiO2As isolated protective layer and
It is graphical mirror structure to be etched after the completion of technique, the GaN base compound substrate of MoCu metal substrates NiPt bondings, such as Fig. 4-
Shown in 3.
Embodiment three
Use band graphic structure SiNxWith AlN as double-layer structure isolated protective layer, thermal conductivity shifts substrate and uses SiC
Substrate, bonding medium layer use Pd materials.
S21 utilizes 4.5 microns thick of MOCVD technology growths using 2 inches 430 microns thick of tablet Sapphire Substrate
GaN epitaxial layer, and continue one layer of 300 nano-aluminum nitride thin layer of low-temperature epitaxy on surface.
The good AlN thin layer surfaces of above-mentioned growth are continued with PECVD technique and grow one layer of 1 micron of thick SiN by S22xIt is thin
Film is as isolated protective layer, then this insulation blocking level is adhered to using 502 Instant cements to 2 inches 400 microns of quartz glass
On substrate.Sapphire Substrate is peeled off by laser lift-off technique again, it is only remaining to be bonded in outside the GaN on quartzy coloured glaze substrate
Prolong layer, 300 nanometers of AlN thin layers and 1 micron of thick SiNxFilm.
2 microns of metal Pd conduct is deposited in S23, GaN epitaxial layer and SiC substrate surface on quartzy coloured glaze substrate simultaneously
Bonding medium layer.Then it under 1200 DEG C, 8 tons of pressure, is bonded together within logical 40 minutes.After bonding, 502 Instant cements can be
It is carbonized under high temperature, therefore, the connection of quartzy coloured glaze substrate and GaN/SiC compound substrates can be automatically separated.
S24 passes through the above-mentioned compound substrate surface SiN of HF erosion removalsxIsolated protective layer.The compound substrate includes one layer
200 microns of thick SiC substrates are bonded one layer of GaN epitaxial layer by PdPd and AlN thin layers use SiN after suitably cleaningx
With AlN as double-layer structure isolated protective layer and SiNxLayer erosion removal after the completion of technique, SiC substrate PdPd are bonded GaN layer
Compound substrate, as shown in Figure 5.Wherein, AlN buffer layers and SiN in technical processxThe double-layer structure isolation of membrane structure composition
Protective layer can not only protect GaN epitaxy film in bonding process, but also can effectively improve secondary epitaxy growth GaN single crystal layer
Crystal quality.
Example IV
Use SiO2With SiC as double-layer structure isolated protective layer, thermal conductivity shifts substrate and Si substrates, bonding is used to be situated between
Matter layer uses Ni materials.
S11, it is micro- using MOCVD combination HVPE technology growths 25 using 2 inches 430 microns thick of tablet Sapphire Substrate
Then the thick GaN epitaxial layer of rice grows one layer 10 microns in the thick GaN single crystal epitaxial wafer surface low-temperature of 25 microns grown
SiC buffer layers.
The good GaN epitaxial layer of above-mentioned growth is continued with PECVD technique and grows one layer of 20 microns of thick SiO by S122It is thin
Film is as isolated protective layer, then this insulation blocking level is adhered to using organic silica gel to 2 inches 400 microns of single crystal Si substrate
On, do interim transfer substrate using single crystal Si substrate.Sapphire Substrate is peeled off by laser lift-off technique again, it is only remaining viscous
Meet GaN epitaxial layer, 10 microns of SiC thin layers and 20 microns of SiO on a si substrate2Film.
S13, the Ni of 5 microns of GaN epitaxial layer surface hot evaporation on a si substrate is as bonding medium layer, Si substrate surfaces
The Ni of 5 microns of vapor deposition simultaneously.Then it under 400 DEG C, 12 tons of pressure, was bonded together by 120 minutes.After bonding, have
Machine silica gel can be carbonized at high temperature, and therefore, the connection of Si substrates and GaN/Si compound substrates can be automatically separated.
S14, using photoetching and dry etching technology by SiO2Film preparation is 3 microns at the period, 2.6 microns of bottom diameter,
High 1.8 microns of conical periodic structure.To expose surface of SiC at circular cone figure spacing, this periodic structure can be made
It is used for reflecting layer.The substrate includes one layer 400 microns thick of Si substrates, is bonded outside one layer of 25 microns of thick GaN by NiNi
Prolong layer, 100 nano SiC buffer layers and 100 microns of SiO2, after suitably cleaning, obtain using SiO in technical process2With
SiC is as SiO after the completion of double-layer structure isolated protective layer and technique2Layer is etched into periodic pattern structure, Si substrates NiNi
The GaN base compound substrate of bonding, as shown in Figure 6.
In addition, growing extension for above-mentioned involved laser lift-off, HVPE technology growths epitaxial layer, PECVD technique
Layer, MOCVD technology growths epitaxial layer, photoetching and dry etching technology HF corrosion etc., are well known to the skilled person
Known technology, be not therefore present invention main points are herein no longer described in detail it.
It should be noted that described above is not the restriction to technical solution of the present invention, in the wound for not departing from the present invention
Under the premise of making design, any obvious replacement is within protection scope of the present invention.
Claims (7)
1. a kind of compound substrate preparation method with isolated protective layer for GaN growth includes the following steps：
S11, on a sapphire substrate epitaxial growth GaN epitaxial layer obtain process for sapphire-based GaN compound substrates；
S12, the GaN epitaxial layer surface in process for sapphire-based GaN compound substrates prepare isolated protective layer, will be isolated using bonding agent
Protective layer is connected on interim transfer substrate, removes former Sapphire Substrate；
S13 prepares bonding medium layer in GaN epitaxial layer and thermal conductivity transfer substrate, then passes through the bonding medium respectively
GaN epitaxial layer and thermal conductivity transfer substrate are bonded by layer, realize GaN epitaxial layer surface and thermal conductivity transfer substrate
Bonding；
S14 shifts substrate in bonding process and falls off temporarily, the isolation to the GaN epitaxial layer surface in the compound substrate that is obtained
Protective layer is prepared into graphical periodic structure using dry or wet etch technique, obtains having the GaN base of isolated protective layer multiple
Close substrate.
2. a kind of compound substrate preparation method with isolated protective layer for GaN growth includes the following steps：
S21, on a sapphire substrate epitaxial growth GaN epitaxial layer obtain process for sapphire-based GaN compound substrates；
S22, the GaN epitaxial layer surface in process for sapphire-based GaN compound substrates prepare isolated protective layer, will be isolated using bonding agent
Protective layer is connected on interim transfer substrate, removes former Sapphire Substrate；
S23 prepares bonding medium layer in GaN epitaxial layer and thermal conductivity transfer substrate, then passes through the bonding medium respectively
GaN epitaxial layer and thermal conductivity transfer substrate are bonded by layer, realize GaN epitaxial layer surface and thermal conductivity transfer substrate
Bonding；
S24 shifts substrate in bonding process and falls off temporarily, and corrosion is carried out to the GaN composite substrate epi-layer surface obtained
Except isolated protective layer, the GaN base compound substrate of removal isolated protective layer is obtained.
3. the compound substrate preparation method with isolated protective layer according to claim 1 or 2 for GaN growth,
It is characterized in that, the isolated protective layer is single layer, bilayer, multilayer or composition graded bedding structure or patterned layer
The multilayered structure that shape structure or layer structure be combined with each other with graphic structure.
4. the compound substrate preparation method with isolated protective layer according to claim 3 for GaN growth, feature
It is, the isolated protective layer is to be patterned before substrate transfer or later processing, the figure of the isolated protective layer
Turn to cone, cylinder, triangular pyramidal, square taper or square column type.
5. the compound substrate preparation method with isolated protective layer according to claim 4 for GaN growth, feature
Be, the insulation blocking layer material be any one or Mo in AlN, ZnO, SiO2, SiNx, SiC, TiC and InN,
Any one elemental metals in Au, Ti, Cu, Pd, W, Ni, Cr, Sn, In or two or more alloy.
6. the compound substrate preparation method with isolated protective layer according to claim 5 for GaN growth, feature
It is, the thickness of the isolated protective layer is 1 nanometer to 100 microns.
7. the compound substrate preparation method with isolated protective layer according to claim 6 for GaN growth, feature
It is, the isolated protective layer is to utilize HVPE, MOCVD, PECVD, electron beam evaporation, magnetron sputtering, plating, vacuum thermal evaporation
Or wet processing, it prepares on the surface of GaN epitaxial layer.
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| CN103305908A (en) * | 2012-03-14 | 2013-09-18 | 东莞市中镓半导体科技有限公司 | Composite substrate for GaN growth |
| CN103579471A (en) * | 2012-07-23 | 2014-02-12 | 东莞市中镓半导体科技有限公司 | Composite substrate with protection layer preventing metal from diffusion |
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