CN117410818A - Packaging heat sink, laser device and preparation method of packaging heat sink - Google Patents
Packaging heat sink, laser device and preparation method of packaging heat sink Download PDFInfo
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- CN117410818A CN117410818A CN202311359676.5A CN202311359676A CN117410818A CN 117410818 A CN117410818 A CN 117410818A CN 202311359676 A CN202311359676 A CN 202311359676A CN 117410818 A CN117410818 A CN 117410818A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 48
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 33
- 238000001465 metallisation Methods 0.000 claims abstract description 29
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052802 copper Inorganic materials 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 22
- 229910018487 Ni—Cr Inorganic materials 0.000 claims abstract description 21
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims abstract description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims description 44
- 230000008021 deposition Effects 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 19
- 238000003466 welding Methods 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 7
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 104
- 238000005476 soldering Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a packaging heat sink, a laser device and a preparation method of the packaging heat sink, wherein the packaging heat sink comprises a substrate, the substrate is made of silicon carbide, the purity of the silicon carbide is 98.5-100%, and the silicon carbide is 4H-SiC; a metallization layer is formed on at least one side surface of the substrate, and comprises a titanium tungsten layer, a copper layer, a nickel chromium layer and a platinum layer which are sequentially stacked, wherein the titanium tungsten layer is close to the substrate; the laser device includes a package heat sink and a laser chip. The packaging heat sink disclosed by the invention conducts heat energy of the laser chip by utilizing the heat transfer effect of the 4H-SiC and the metallization layer, improves the heat dissipation efficiency of the laser, can meet the requirements of the laser chip on high reliability and stable functions, prolongs the service life of the laser, has stable performance and environmental protection, is easy for large-scale industrialized mass production, and has wide application prospect.
Description
Technical Field
The present disclosure relates to the field of semiconductors, and in particular, to a packaging heat sink, a laser device, and a method of manufacturing a packaging heat sink.
Background
With the arrival of the 5G age and the continuous development of information technology, the laser power is increased from 1W8W to more than 15W, even to more than 30W, but the current radiating substrate for receiving the ultra-high power radiating problem, such as aluminum nitride heat sink, is only imported from abroad and is expensive, and becomes a domestic high-power radiating neck product, and a more effective domestic alternative scheme is urgently needed in China, 4H-high-purity silicon carbide is taken as one of core materials of a third-generation wide-bandgap semiconductor, and compared with the traditional semiconductor materials such as silicon and aluminum nitride, the high-purity silicon carbide has a plurality of excellent properties such as large bandgap, high carrier saturation migration speed, high thermal conductivity, critical breakdown, high field intensity and the like, and the good performance can meet the new requirements of modern electronic technology; 4H-high purity silicon carbide is used as a novel material of a radiation-resistant device in an ultra-high temperature environment, and the application of the material to a high-power laser radiating material is still blank; in addition, in the use process of the high-power laser, along with the improvement of power, high temperature can be generated, and the high-power laser cannot be effectively scattered, but the heat dissipation efficiency of the existing high-power laser heat dissipation material is low, and the working performance of the high-power laser is influenced.
Disclosure of Invention
The disclosure aims to provide a packaging heat sink, a laser device and a preparation method of the packaging heat sink so as to improve the heat dissipation efficiency of a laser.
In order to achieve the above object, a first aspect of the present disclosure provides a packaging heat sink, the packaging heat sink including a substrate, wherein the substrate is made of silicon carbide, the purity of the silicon carbide is 98.5% -100%, and the silicon carbide is 4H-SiC; a metallization layer is formed on at least one side surface of the substrate; the metallization layer comprises a titanium tungsten layer, a copper layer, a nickel chromium layer and a platinum layer which are sequentially stacked, wherein the titanium tungsten layer is close to the substrate.
Optionally, the thickness of the titanium tungsten layer is 0.05-0.08 mu m; the thickness of the copper layer is 40-60 mu m; the thickness of the nickel-chromium layer is 0.1-0.5 mu m; the thickness of the platinum layer is 0.2-0.3 mu m.
Optionally, the packaging heat sink further comprises a welding layer, wherein the welding layer is formed on at least part of the surface, far away from the substrate, of the metallization layer, the welding layer is made of gold-tin alloy, and the thickness of the welding layer is 5-7 μm.
Optionally, the gold-tin alloy is an Au20Sn80 alloy.
Optionally, the thickness of the substrate is 0.35 mm-0.5 mm, the TTV value is 3-5 μm, and the roughness is 0.2-0.3 nm.
A second aspect of the present disclosure provides a method of preparing a packaged heatsink, the method comprising the steps of:
(1) Pretreating a substrate to obtain a pretreated substrate;
(2) And sequentially carrying out tungsten layer deposition, copper layer deposition, nickel-chromium layer deposition and platinum layer deposition on at least one side surface of the pretreated substrate to obtain the substrate on which the metallization layer is deposited.
Optionally, the pretreatment comprises grinding, polishing and cleaning which are sequentially carried out;
the polishing is performed by using a polishing solution which is SiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The cleaning liquid used for cleaning comprises H 2 SO 4 And H 2 O 2 The H is 2 SO 4 And H 2 O 2 The weight ratio of (1) is 1.5-4; the cleaning time is 12-15 min.
Optionally, the titanium tungsten layer is deposited as a magnetic layerAnd (3) performing controlled sputtering deposition, wherein the conditions for depositing the titanium tungsten layer comprise: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 torr, tiW target power is 1100W-1300W, ar flow is 160 sccm-180 sccm;
the copper layer is deposited by electroplating, and the conditions for depositing the copper layer comprise: the ambient temperature is-10 ℃ to 60 ℃; the input voltage is 200V-230V; the working noise of the water treatment equipment is not more than 80dB (A); a Relative Humidity (RH) of not more than 85%; the COD content of the raw water is 100 mg/L-150000 mg/L;
the nickel-chromium layer is deposited by magnetron sputtering, and the conditions for depositing the nickel-chromium layer include: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 torr, niCr target power is 1500W-1650W, ar flow is 185 sccm-205 sccm;
the platinum layer is deposited by magnetron sputtering, and the conditions for depositing the platinum layer include: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 the torr, pt target power is 1450W-1550W, ar flow is 210sccm-230 sccm.
Optionally, the method further comprises: exposing the substrate on which the metallization layer is deposited, and then depositing a welding layer on at least part of the surface of the metallization layer;
wherein, the exposure treatment is carried out by a photoetching machine with the wavelength of 300 nm-400 nm and the resolution less than 1 mu m, and the exposure treatment time is 10 s-30 s;
the welding layer is deposited by evaporation, and the conditions for depositing the welding layer comprise: vacuum pressure is less than 2.2X10 -5 torr, chamber temperature is 1600-2200 ℃.
A third aspect of the present disclosure provides a laser device comprising a laser chip and the package heatsink provided in the first aspect of the present disclosure.
Through the technical scheme, the packaging heat sink, the laser device and the preparation method of the packaging heat sink are provided, the packaging heat sink comprises a substrate, the substrate is made of silicon carbide, the purity of the silicon carbide is 98.5% -100%, and the silicon carbide is 4H-SiC; a metallization layer is formed on at least one side surface of the substrate, and comprises a titanium tungsten layer, a copper layer, a nickel-chromium layer and a platinum layer which are sequentially laminated; the laser device includes a package heat sink and a laser chip. The packaging heat sink disclosed by the invention conducts heat energy of the laser chip by utilizing the heat transfer effect of the 4H-SiC and the metallization layer, improves the heat dissipation efficiency of the laser, can meet the requirements of the laser chip on high reliability and stable functions, prolongs the service life of the laser, has stable performance and environmental protection, is easy for large-scale industrialized mass production, and has wide application prospect.
Additional features and advantages of the present disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification, illustrate the disclosure and together with the description serve to explain, but do not limit the disclosure. In the drawings:
fig. 1 is a schematic diagram of the structure of a laser device in embodiment 1.
Fig. 2 is a schematic structural diagram of a packaged heat sink in embodiment 1.
Fig. 3 is a cross-sectional view of the metallization layer of the laser device of example 1.
Description of the reference numerals
S1-laser chip S2-soldering layer S3-metallization layer S4-substrate a 1-TiW layer a 2-copper layer a 3-NiCr layer a 4-platinum layer
Detailed Description
Specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the disclosure, are not intended to limit the disclosure.
A first aspect of the present disclosure provides a packaging heatsink, as shown in fig. 2, where the packaging heatsink includes a substrate made of silicon carbide, and the purity of the silicon carbide is 98.5% -100%, preferably 99% -100%, and the purity of the silicon carbide is measured by using an inductively coupled plasma mass spectrometer, where the apparatus can accurately measure the type and concentration of impurities and dopants based on mass-to-charge ratio analysis technology. The comprehensive analysis of the polysilicon sample can be realized by utilizing an inductively coupled plasma mass spectrometer, so that the purity of the polysilicon sample can be estimated; the silicon carbide is 4H-SiC; a metallization layer is formed on at least one side surface of the substrate, preferably on both side surfaces of the substrate; as shown in fig. 3, the metallization layer includes a titanium tungsten layer, a copper layer, a nickel chromium layer, and a platinum layer that are sequentially stacked, wherein the titanium tungsten layer is adjacent to the substrate. The 4H-SiC has excellent heat dissipation performance, radiation resistance and mechanical strength, and can provide mechanical support, protection and heat dissipation for components as a packaging heat sink. The copper layer has high heat conductivity, and the nickel-chromium layer is used as a functional layer, so that the copper layer has high density, high bonding strength and excellent heat conduction efficiency; but also can improve the hardness, wear resistance, corrosion resistance, bearing capacity and thermal oxidation resistance of the workpiece; the platinum layer prevents diffusion of substances between each layer due to heat under high temperature environments, particularly when soldering is performed. The combination of the 4H-SiC substrate and the metallization layer can improve the heat dissipation performance of the laser.
The packaging heat sink can conduct out the heat energy of the laser chip by utilizing the heat transfer effect of the 4H-SiC and the metallization layer, so that the heat dissipation efficiency of the laser is improved.
According to one embodiment of the present disclosure, the thickness of the titanium tungsten layer is 0.05 μm to 0.08 μm, preferably 0.06 μm to 0.07 μm; the thickness of the copper layer is 40-60 μm, preferably 50-55 μm; the thickness of the nickel-chromium layer is 0.1-0.5 mu m, preferably 0.3-0.4 mu m; the thickness of the platinum layer is 0.2 μm to 0.3 μm, preferably 0.22 μm to 0.25 μm.
According to one embodiment of the disclosure, the packaging heat sink further comprises a soldering layer, the soldering layer is formed on at least part of the surface of the metallization layer, which is far away from the substrate, the soldering layer is made of gold-tin alloy, and the thickness of the soldering layer is 5-7 μm, preferably 5.5-6 μm. The welding layer is used for connecting the chip, and the shape and the position of the welding layer are deposited according to actual needs.
According to one embodiment of the present disclosure, the gold-tin alloy is an Au20Sn80 alloy. The gold-tin alloy has low melting point, good compactness and high thermal conductivity, does not need soldering flux, and can directly realize good flip-chip bonding of the packaging material.
According to one embodiment of the present disclosure, the substrate has a thickness of 0.35mm to 0.5mm, preferably 0.4mm to 0.45mm, a TTV value (difference between maximum thickness and minimum thickness in thickness measurement) of 3 μm to 5 μm, preferably 3.5 μm to 4.5mm, and a roughness of 0.2nm to 0.3nm, preferably 0.2nm to 0.25nm. The substrate can ensure good heat dissipation effect.
A second aspect of the present disclosure provides a method of preparing a packaged heatsink, the method comprising the steps of:
(1) Pretreating a substrate to obtain a pretreated substrate;
(2) And sequentially carrying out tungsten layer deposition, copper layer deposition, nickel-chromium layer deposition and platinum layer deposition on at least one side surface of the pretreated substrate to obtain the substrate on which the metallization layer is deposited.
According to one embodiment of the present disclosure, the pretreatment includes sequentially performing grinding, polishing, and cleaning;
the polishing is performed by using a polishing solution which is SiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The cleaning liquid used for cleaning comprises H 2 SO 4 And H 2 O 2 The H is 2 SO 4 And H 2 O 2 The weight ratio of (1) is 1.5-4; the cleaning time is 12-15 min. The purpose of the cleaning is to remove organic contaminants and particulate matter from the surface. Spin-drying is carried out by a spin-dryer after cleaning, the rotating speed of the spin-dryer is 600-850 r/min, and the spin-drying time is 450-550 s.
According to one embodiment of the present disclosure, the titanium tungsten layer deposition is a magnetron sputtering deposition, and the conditions of the titanium tungsten layer deposition include: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 torr, preferably 0.1X10 -5 torr～2.1×10 - 5 the power of the TiW target is 1100-1300W, preferably 1150-1250w, and the Ar flow is 160-180 sccm, preferably 170-180 sccm;
the copper layer is deposited by electroplating, and the conditions for depositing the copper layer comprise: the ambient temperature is-10 ℃ to 60 ℃, preferably 0 ℃ to 50 ℃; the input voltage is 200V-230V, preferably 210V-220V; the working noise of the water treatment equipment is not more than 80dB (A), preferably 10dB (A) to 78dB (A); the Relative Humidity (RH) is not more than 85%, preferably 30-80%; the COD content of the raw water is 100mg/L to 150000mg/L, preferably 200mg/L to 140000mg/L;
the nickel-chromium layer is deposited by magnetron sputtering, and the conditions for depositing the nickel-chromium layer include: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 torr, preferably 0.1X10 -5 torr～2.1×10 -5 the torr, the NiCr target power is 1500-1650W, preferably 1550-160W, the Ar flow is 185-205 sccm, preferably 190-200 sccm;
the platinum layer is deposited by magnetron sputtering, and the conditions for depositing the platinum layer include: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 torr, preferably 0.1X10 -5 torr～2.1×10 -5 the torr, pt target power is 1450W-1550W, preferably 1480W-1500W, ar flow is 210sccm-230sccm, preferably 215 sccm-220 sccm.
According to one embodiment of the present disclosure, the method further comprises: exposing the substrate on which the metallization layer is deposited, and then depositing a welding layer on at least part of the surface of the metallization layer; then sequentially ultrasonically cleaning and spin-drying in acetone, absolute ethyl alcohol and deionized water;
wherein, the exposure treatment is carried out by a photoetching machine with the wavelength of 300 nm-400 nm and the resolution less than 1 mu m, and the exposure treatment time is 10 s-30 s;
the welding layer is deposited by evaporation, and the conditions for depositing the welding layer comprise: vacuum pressure is less than 2.2X10 -5 torr, preferably 0.1X10 -5 torr～2.1×10 -5 torr; the chamber temperature is 1600 ℃ to 2200 ℃, preferably 1700 ℃ to 2000 ℃.
A third aspect of the present disclosure provides a laser device, as shown in fig. 1, where the laser device includes a laser chip and the packaging heat sink provided in the first aspect of the present disclosure, and 4H-SiC in the packaging heat sink is connected to the laser chip, so that a good conductive effect can be achieved. The power of the laser device is 15W-80W.
The present disclosure is further illustrated by the following examples, but the present disclosure is not limited thereby. In the following examples of the present disclosure, all of the products used are commercially available products.
In the following examples and comparative examples, the method for measuring the TTV value of the substrate was a capacitance method.
The method for measuring the roughness of the substrate is a template comparison method.
The model of the used Japan Aifa department magnetron sputtering machine is ei-501z; the model deposited by the Japanese Evaporation machine in Aifa department is ei-5z; the model of the photoetching machine is I10, and the manufacturer is Nikon Japan.
Example 1
The preparation method of the packaging heat sink comprises the following steps: the 4H-SiC substrate was ground, wherein the purity of 4H-SiC was 99%, the thickness was 0.4mm, the TTV value was 4 μm, the roughness was 0.2nm, and then SiO was used 2 Cleaning with cleaning solution H for 15min after polishing 2 SO 4 And H 2 O 2 1, the method comprises the following steps: 4, spin-drying the mixture for 500s (the rotating speed is 750 r/min) by a spin dryer after cleaning; metallization layer deposition (a cross-sectional view of the metallization layer is shown in fig. 3) is performed on both surfaces of the substrate, i.e., titanium tungsten layer deposition, copper layer deposition, nickel-chromium layer deposition, and platinum layer deposition are sequentially performed. The deposition of the titanium tungsten layer is carried out by using a magnetron sputtering machine of the Japan Aifa department, and the conditions are as follows: the vacuum pressure of the reaction cavity is 1.8X10 -5 torr, tiW target power is 1200W, ar flow is 180sccm; copper deposition was performed using electroplating techniques under the following conditions: the ambient temperature is 45 ℃; the input voltage is 220V; the working noise of the water treatment equipment is 75dB (A); relative Humidity (RH) 80%; the COD content of the raw water is 2000mg/L; the nickel-chromium layer deposition is carried out by using a magnetron sputtering machine of the department of loviaceae, and the conditions are as follows: the vacuum pressure of the reaction cavity is 1.8X10 -5 torr, niCr target power 160W, ar flow 200sccm; the platinum layer deposition is carried out by adopting a Japan Aifa magnetron sputtering machine, and the conditions are as follows: the vacuum pressure of the reaction cavity is 1.8X10 -5 torr, pt target power 1500W and Ar flow 220sccm; the thickness of the titanium tungsten layer is 0.065 mu m; the thickness of the copper layer was 52 μm; the thickness of the nickel-chromium layer is 0.35 mu m; thickness of platinum layerThe degree is 0.24 μm;
then, the exposure treatment is carried out for 15 seconds by a photoetching machine with the wavelength of 365nm and the resolution of 0.65 mu m; the upper surface of the above product was subjected to solder layer (Au 20Sn 80) deposition using an evaporator of japan afida under the following conditions: vacuum pressure 1.8X10 - 5 torr; the chamber temperature is 2000 ℃; thickness is 5.5 μm; and then sequentially ultrasonically cleaning and spin-drying in acetone, absolute ethyl alcohol and deionized water to obtain the packaging heat sink, as shown in figure 2.
The structure diagram of the laser device shown in fig. 1 comprises the packaging heat sink and the laser chip, the packaging heat sink conducts heat energy of the laser chip by utilizing the heat transfer effect of the 4H-SiC and the metallization layer, the heat dissipation efficiency of the laser is improved, the requirements of the laser chip on high reliability and stable functions can be met, the service life of the laser is prolonged, the performance is stable and environment-friendly, the large-scale industrial mass production is easy, and the application prospect is wide.
The preferred embodiments of the present disclosure have been described in detail above, but the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solutions of the present disclosure within the scope of the technical concept of the present disclosure, and all the simple modifications belong to the protection scope of the present disclosure.
In addition, the specific features described in the above embodiments may be combined in any suitable manner without contradiction. The various possible combinations are not described further in this disclosure in order to avoid unnecessary repetition.
Moreover, any combination between the various embodiments of the present disclosure is possible as long as it does not depart from the spirit of the present disclosure, which should also be construed as the disclosure of the present disclosure.
Claims (10)
1. The packaging heat sink is characterized by comprising a substrate, wherein the substrate is made of silicon carbide, the purity of the silicon carbide is 98.5% -100%, and the silicon carbide is 4H-SiC; a metallization layer is formed on at least one side surface of the substrate; the metallization layer comprises a titanium tungsten layer, a copper layer, a nickel chromium layer and a platinum layer which are sequentially stacked, wherein the titanium tungsten layer is close to the substrate.
2. The packaged heat sink of claim 1 wherein the titanium tungsten layer has a thickness of 0.05 μm to 0.08 μm; the thickness of the copper layer is 40-60 mu m; the thickness of the nickel-chromium layer is 0.1-0.5 mu m; the thickness of the platinum layer is 0.2-0.3 mu m.
3. The package heat sink of claim 1, further comprising a solder layer formed on at least a portion of a surface of the metallization layer remote from the substrate, the solder layer being a gold-tin alloy, the solder layer having a thickness of 5 μm to 7 μm.
4. A packaged heat sink according to claim 3 wherein said gold-tin alloy is Au20Sn80 alloy.
5. The packaged heat sink of claim 1 wherein the substrate has a thickness of 0.35mm to 0.5mm, a ttv value of 3 μm to 5 μm, and a roughness of 0.2nm to 0.3nm.
6. A method of preparing the encapsulated heat sink of any one of claims 1 to 5, comprising the steps of:
(1) Pretreating a substrate to obtain a pretreated substrate;
(2) And sequentially carrying out tungsten layer deposition, copper layer deposition, nickel-chromium layer deposition and platinum layer deposition on at least one side surface of the pretreated substrate to obtain the substrate on which the metallization layer is deposited.
7. The method of claim 6, wherein the pretreatment comprises grinding, polishing, and cleaning performed sequentially;
the polishing is performed with a polishing liquid, and the polishingThe liquid is SiO 2 The method comprises the steps of carrying out a first treatment on the surface of the The cleaning liquid used for cleaning comprises H 2 SO 4 And H 2 O 2 The H is 2 SO 4 And H 2 O 2 The weight ratio of (1) is 1.5-4; the cleaning time is 12-15 min.
8. The method of claim 6, wherein the depositing of the titanium tungsten layer is a magnetron sputter deposition, and wherein the conditions of the depositing of the titanium tungsten layer include: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 torr, wherein the power of the TiW target is 1100-1300W, and the Ar flow is 160-180 sccm;
the copper layer is deposited by electroplating, and the conditions for depositing the copper layer comprise: the ambient temperature is-10 ℃ to 60 ℃; the input voltage is 200V-230V; the working noise of the water treatment equipment is not more than 80dB (A); a Relative Humidity (RH) of not more than 85%; the COD content of the raw water is 100 mg/L-150000 mg/L;
the nickel-chromium layer is deposited by magnetron sputtering, and the conditions for depositing the nickel-chromium layer include: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 the torr, the NiCr target power is 1500W-1650W, and the Ar flow is 185 sccm-205 sccm;
the platinum layer is deposited by magnetron sputtering, and the conditions for depositing the platinum layer include: the vacuum pressure of the reaction cavity is less than 2.2 multiplied by 10 -5 the torr, pt target power is 1450W-1550W, ar flow is 210sccm-230 sccm.
9. The method of claim 6, wherein the method further comprises:
exposing the substrate on which the metallization layer is deposited, and then depositing a welding layer on at least part of the surface of the metallization layer;
wherein, the exposure treatment is carried out by a photoetching machine with the wavelength of 300 nm-400 nm and the resolution less than 1 mu m, and the exposure treatment time is 10 s-30 s;
the welding layer is deposited by evaporation, and the conditions for depositing the welding layer comprise: vacuum pressure is less than 2.2X10 - 5 torr, chamber temperature 1600℃～2200℃。
10. A laser device comprising a laser chip and the package heat sink of any one of claims 1-5.
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| CN117650053A (en) * | 2024-01-30 | 2024-03-05 | 天津正新光电科技有限公司 | Preparation method of silicon carbide packaging heat sink |
| CN117650053B (en) * | 2024-01-30 | 2024-05-17 | 天津正新光电科技有限公司 | Preparation method of silicon carbide packaging heat sink |
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