CN109390452A - A kind of great power LED ferromagnetic composite ceramic-based heat-radiating substrate of carbon fiber coining - Google Patents
A kind of great power LED ferromagnetic composite ceramic-based heat-radiating substrate of carbon fiber coining Download PDFInfo
- Publication number
- CN109390452A CN109390452A CN201811214767.9A CN201811214767A CN109390452A CN 109390452 A CN109390452 A CN 109390452A CN 201811214767 A CN201811214767 A CN 201811214767A CN 109390452 A CN109390452 A CN 109390452A
- Authority
- CN
- China
- Prior art keywords
- carbon fiber
- nano
- multiple combinations
- led
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 229920000049 Carbon (fiber) Polymers 0.000 title claims abstract description 29
- 239000004917 carbon fiber Substances 0.000 title claims abstract description 29
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 239000002131 composite material Substances 0.000 title claims abstract description 22
- 239000000919 ceramic Substances 0.000 title claims abstract description 20
- 230000005294 ferromagnetic effect Effects 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 15
- 239000010408 film Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 5
- 239000002120 nanofilm Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000005855 radiation Effects 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910020039 NbSe2 Inorganic materials 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 235000019441 ethanol Nutrition 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000004381 surface treatment Methods 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910002899 Bi2Te3 Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 229910052573 porcelain Inorganic materials 0.000 claims description 2
- 238000012545 processing Methods 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 239000002887 superconductor Substances 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 150000002825 nitriles Chemical class 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 7
- 229910017083 AlN Inorganic materials 0.000 abstract description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 2
- 238000010344 co-firing Methods 0.000 abstract description 2
- 239000010949 copper Substances 0.000 description 8
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- 229910016001 MoSe Inorganic materials 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000011415 microwave curing Methods 0.000 description 1
- 238000009768 microwave sintering Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Luminescent Compositions (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
The preparation method proposed by the present invention for imprinting ferromagnetic composite ceramic-based heat-radiating substrate with carbon fiber for great power LED, it is combined together using the low-expansion coefficient of aluminium nitride ceramics and the high thermal conductivity of metal, makes heat-radiating substrate that there are a series of excellent characteristics such as low-density, low thermal coefficient of expansion, high heat conductance, high rigidity.Using semiconductor preparing process, preparation temperature is lower, avoids high temperature co-firing.The composite ceramic material of preparation carries out LED chip encapsulation, can increase substantially LED chip luminous efficiency and luminescent lifetime.Particularly suitable for high-precision, high power, highly integrated LED chip encapsulation.
Description
Technical field
The present invention relates to the high-power preparations that ferromagnetic composite ceramic-based heat-radiating substrate material is imprinted with LED carbon fiber, belong to
It shines and photo technology field.
Background technique
With the continuous development of technology, the application of great power LED will be more and more extensive.Simultaneously with the increasing of LED power
Greatly, heat dissipation problem also becomes more prominent.Under normal conditions, with the raising of LED junction temperature, the light efficiency of LED component and use
Service life can decline, and when junction temperature is more than 125 DEG C, LED even will appear failure.Due to the limitation of technical conditions, at this stage
The luminance conversion efficiency of LED only 20%~30% or so, remaining energy are largely all converted to thermal energy and are dissipated.To big
For power LED, if these heats are gathered in chip interior and export not in time, the reduction of LED luminous efficiency can be made, more sternly
In the service life that also will affect LED of weight, therefore, the most important approach that substrate heat dissipation is radiated as LED chip is current LED encapsulation
The research and development of key in system, the heat-radiating substrate of the function admirables such as low thermal resistance, high thermal conductivity will be particularly important.
LED heat radiation substrate mainly utilizes its heat-radiating substrate material itself to have preferable heat conductivity, by heat source from LED
Crystal grain export.Therefore, we, can be other by LED heat radiation substrate subdivision two major classes from the narration of LED sinking path, and respectively LED is brilliant
Grain substrate and system circuit board, this two different heat-radiating substrate carries LED grain respectively and LED wafer sends out LED grain
Thermal energy caused by light time is then absorbed by atmospheric environment via LED grain heat-radiating substrate to system circuit board, to reach heat
Scattered effect.The heat-radiating substrate of heat-radiating substrate, especially great power LED, main function are to absorb heat caused by LED chip
It must take into account following performance: thermal conductivity when measuring and carry out heat with the external world and exchange, therefore using power LED heat dissipating substrate material
Rate is high, stability is high, the ability of excellent insulation performance and good matching chip thermal expansion coefficient.At this stage using most
Baseplate material be resin, metal (aluminum bronze etc.), silicon, ceramics and sandwich etc.
Epoxy resin copper-clad base plate (FR-4) is applied and most popular substrate in conditional electronic encapsulation, it will usually be made
For the main material of printed circuit board (PCB), but (0.2~0.3W/ (mK) is lower, and heat resistance is poor, is only applicable in for its thermal conductivity
In the very low LED component encapsulation of small-power or integrated level.Silicon semiconductor substrate material, have thermal conductivity it is high, it is at low cost, and
The features such as LED chip thermal mismatching is small, cutting easy to process, can be used as the heat-radiating substrate material of great power LED, still, use
Silicon as baseplate material, there are still material fragilities it is big, insulating properties is bad the disadvantages of, and the technology of conductive through hole is immature.Mesh
Preceding using the good mechanical performance for being preferably at most metal (aluminum bronze etc.) Al and Cu, thermal conductivity is high, and easy to process, is well suited as
The material of metal substrate.Due to having used epoxy resin as filler, keep its thermal conductivity usually lower, and the heat of aluminium and copper is swollen
Swollen coefficient and chip mismatch, and easily make chip cracks.
Summary of the invention
In order to overcome the disadvantages mentioned above and deficiency of the prior art, it is an object of the invention to propose that a kind of great power LED is used
Carbon fiber imprints the preparation of ferromagnetic composite ceramic-based heat-radiating substrate, improves the chemical stabilization of LED heat radiation substrate thermal conductivity, improvement
Property, adjust thermal expansion coefficient, enhancing mechanical performance, reduce LED junction temperature, improve high-capacity LED thermal diffusivity, improve LED light effect with
Service life.
The purpose of the present invention, the LED heat radiation substrate material of production include that structural ceramics substrate, metal buffer layer, nanometer are super
Lead plated film, carbon fiber composition, structural formula AlN/M/nano-film/CF.
The purpose of the present invention is realized by technical solution once, comprising the following steps:
1) alumimium nitride ceramic sheet cleans, shows that processing is modified；
2) metal buffer layer is prepared in aluminum-nitride-based on piece；
3) carbon fiber complex superconducting nano ink is prepared；
4) carbon fiber complex superconducting nano thin-film is prepared on metal buffer layer
Acetone, ethyl alcohol, the tert-butyl alcohol, deionized water, acetonitrile, tetrahydro furan can be selected in above-mentioned alumimium nitride ceramic sheet cleaning solvent
It one of mutters or multiple combinations.
Above-mentioned surface treatment mode, it is characterised in that high pure nitrogen purging, ozone treatment can be taken, in plasma treatment
One or more combinations.
Above-mentioned metal buffer layer, it is characterised in that optional vacuum evaporation, magnetron sputtering, electrochemical deposition, pulse are heavy
One of product, vacuum vapor deposition, chemical vapor deposition, atomic layer deposition or multiple combinations.
Above-mentioned metal buffer layer, it is characterised in that can prepare metallic diaphragm Cu, Al, Zn, Ni, Ti, Au, Fe, Mo, Mg,
One of Cr, Zr, Sn, Sb, Bi, Si or multiple combinations.
Above-mentioned superconducting thin film, it is characterised in that wherein superconducting material at room temp selects (NH3)yLixMoSe、(NH3)
yNaxMoSe,(NH3)yKxMoSe,(NH3)yCsxMoSe,(PbSe)x(NbSe2)y,(ZnS)x(NbSe2)y,(YBa2Cu2O2)
x/(LaCaMnO3)y,Bi2Te3/Fe1+y Te,KxNayNbO3One of or multiple combinations；Wherein 0 < x <, 1,0 < y < 1.
Above-mentioned superconducting thin film, it is characterised in that superconduction composite material nano-scale is 10nm~100nm, and film is thick
Spend 1 μm~1mm.
Above-mentioned carbon fiber composite membrane, it is characterised in that the carbon fiber can be selected T300, T400, T600, in T800
One or more combinations
Above-mentioned carbon fiber composite membrane, it is characterised in that the mass ratio of used carbon fiber and superconductor is selected as
0.01%~0.5%, preferably 0.05~0.1%.
Above-mentioned carbon fiber complex superconducting ink, it is characterised in that used silicon oxygen inorganic ceramic resin is used as filling,
Its volume accounting is 10%~30%.
Above-mentioned carbon fiber complex superconducting ink, it is characterised in that used curing mode has thermosetting, and UV solidification is infrared
Line solidification, one of microwave curing or multiple combinations.
The preparation side proposed by the present invention for imprinting ferromagnetic composite ceramic-based heat-radiating substrate with carbon fiber for great power LED
Method, its advantage is that, compared with the background technology, the present invention have apparent superiority, using aluminium nitride ceramics low-expansion coefficient and
The high thermal conductivity of metal is combined together, and heat-radiating substrate is made to have low-density, low thermal coefficient of expansion, high heat conductance, high rigidity etc.
A series of excellent characteristics.
The preparation side proposed by the present invention for imprinting ferromagnetic composite ceramic-based heat-radiating substrate with carbon fiber for great power LED
Method, it the advantage is that and introduce nano superconductive film layer, reduce LED heat dissipation thermal resistance, improve phonon conduction rate, it is normal to improve dielectric
Several and dielectric loss.Carbon fiber composite film is introduced simultaneously and improves heat sink material rigidity, improves substrate elasticity modulus and wearability
Deng.
Great power LED proposed by the present invention imprints the preparation method of ferromagnetic composite ceramic-based heat-radiating substrate with carbon fiber,
Advantage is that preparation temperature is lower, avoids high temperature co-firing using semiconductor preparing process.The composite ceramic material of preparation carries out
LED chip encapsulation, can increase substantially LED chip luminous efficiency and luminescent lifetime.Particularly suitable for high-precision, high power, height collection
It is encapsulated at LED chip.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of carbon fiber complex superconducting cermet heat-radiating substrate prepared by the present invention.
Fig. 2 is the SEM figure of metal buffer layer prepared by present example 1-3.
Fig. 3 is the figure of superconducting nano film layer HRTEM prepared by present example 1-3
Specific embodiment
Example 1
The first step, by aluminium nitride chip as being cleaned by ultrasonic 10min in ethanol solution, then by substrate as deionization
10min is rinsed in water.It is dried up with High Purity Nitrogen air gun substrate, then with ozone machine 10min, it is spare.
Second step, by the substrate pre-processed as vacuum evaporation room, vacuum is evacuated to 8x10-4Pa, target select Ti purity
99.999%, film thickness monitoring at 0.8 micron,.The magnetron sputtering that metacoxal plate carries out copper metal layer again is deposited, vacuum degree is evacuated to
1.0x10-3300V is arranged in Pa, current density 20mA/cm, acceleration voltage, and deposition rate 200nm/min finally obtains thickness
For the copper metal film layer of 0.01mm thickness.
Third step, by the room temperature superconductive composite material (NH of preparation3)0.3Li0.7MoSe, carbon fiber T600, silicon oxygen pottery
Porcelain polymer, which premixes by a certain percentage and forms granularity, is the nano ink of 100nm, then is coated with by the way of blade coating,
Infrared ray is sintered 30min, prepares the superconduction composite nano film with a thickness of 200nm.
Example 2
The first step, by aluminium nitride chip as being cleaned by ultrasonic 10min in acetone soln, then by substrate as in deionized water
Rinse 10min.It is dried up with High Purity Nitrogen air gun substrate, is handling 10min with Surface Treatment with Plasma machine, it is spare.
The substrate pre-processed is placed in vacuum evaporation room by second step, and vacuum is evacuated to 6x10-4Pa, target select Ni purity
99.9999%, film thickness monitoring is preparing nanometer column Ni by dry etching, size Control is in 100nm width at 1 micron.Afterwards
Cu nano wire is prepared using electrochemical deposition, diameter is wide than being 1000:1.
Third step, by the room temperature superconductive composite material (NH of preparation3)0.5K0.5MoSe, carbon fiber T400, silicon oxygen ceramics
Polymer premixes by a certain percentage and is formed the nano ink that granularity is 50nm, adjusts viscosity, then the side using ultrasound spraying
Formula prepares laminated film, and UV is sintered 30min, then hot gas sintering 30min, prepares thin with a thickness of the superconduction composite Nano of 180nm
Film.
Example 3
Aluminium nitride chip is placed in supersonic cleaning machine by the first step, is successively cleaned in ethyl alcohol, acetone, acetonitrile solution
30min, then by substrate as rinsing 10min in deionized water.It is dried up with High Purity Nitrogen air gun substrate, with Surface Treatment with Plasma
Machine handles 15min, spare.
Second step, by the substrate pre-processed as vacuum evaporation room, vacuum is evacuated to 1x10-5Pa, target select Ti purity
99.999%, Mg purity 99.999%, Au purity 99.9999%, successively vapor deposition forms the sandwich composition metal buffering of Ti/Mg/Au
Layer.With a thickness of 100nm/160nm/300nm.
Third step, by the room temperature superconductive composite material (YBa of preparation2Cu2O2)0.35/(LaCaMnO3) 0.65, carbon fiber
T600 is tieed up, silicon oxygen ceramics polymer premixes by a certain percentage and formed the nano ink that granularity is 50nm, adjusts viscosity, then adopt
Laminated film is prepared with the mode of ultrasound spraying, UV is sintered 30min, then microwave sintering 10min, prepares with a thickness of 350nm's
Superconduction composite nano film.
Claims (10)
1. the purpose of the present invention, the LED heat radiation substrate material of production includes structural ceramics substrate, metal buffer layer, nano superconductive
Plated film, carbon fiber composition, structural formula AlN/M/nano-film/CF.
2. the purpose of the present invention is realized by technical solution once, comprising the following steps:
1) alumimium nitride ceramic sheet cleans, shows that processing is modified；
2) metal buffer layer is prepared in aluminum-nitride-based on piece；
3) carbon fiber complex superconducting nano ink is prepared；
4) carbon fiber complex superconducting nano thin-film is prepared on metal buffer layer.
3. acetone, ethyl alcohol, the tert-butyl alcohol, deionized water, second can be selected in alumimium nitride ceramic sheet cleaning solvent as described in requiring right 2
One of nitrile, tetrahydrofuran or multiple combinations.
4. as described in requiring right 2, substrate surface treatment mode, it is characterised in that can take high pure nitrogen purging, ozone treatment,
One of plasma treatment or multiple combinations.
5. as described in requiring right 2, metal buffer layer it is characterized in that can be selected vacuum evaporation, magnetron sputtering, electrochemical deposition,
One of pulsed deposition, vacuum vapor deposition, chemical vapor deposition, atomic layer deposition or multiple combinations.
6. as described in requiring right 2, above-mentioned metal buffer layer, it is characterised in that can prepare metallic diaphragm Cu, Al, Zn, Ni,
One of Ti, Au, Fe, Mo, Mg, Cr, Zr, Sn, Sb, Bi, Si or multiple combinations.
7. as described in requiring right 2, above-mentioned superconducting thin film, it is characterised in that wherein superconducting material at room temp selects (NH3)
yLixMoSe、(NH3)yNaxMoSe,(NH3)yKxMoSe,(NH3)yCsxMoSe,(PbSe)x(NbSe2)y,(ZnS)x(NbSe2)
y,(YBa2Cu2O2)x/(LaCaMnO3)y,Bi2Te3/Fe1+yTe,KxNayNbO3One of or multiple combinations；Wherein 0 < x <
1,0 < y < 1.
8. as described in requiring right 2, above-mentioned superconducting thin film, it is characterised in that superconduction composite material nano-scale is 10nm
~100nm, 1 μm~1mm of film thickness.
9. as described in requiring right 2, above-mentioned carbon fiber composite membrane, it is characterised in that T300 can be selected in the carbon fiber,
One of T400, T600, T800 or multiple combinations；Wherein the mass ratio of used carbon fiber and superconductor is selected as
0.01%~0.5%, preferably 0.05~0.1%.
10. as described in requiring right 2, above-mentioned carbon fiber complex superconducting ink, it is characterised in that the used inorganic pottery of silicon oxygen
For porcelain resin as filling, volume accounting is 10%~30%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811214767.9A CN109390452A (en) | 2018-10-17 | 2018-10-17 | A kind of great power LED ferromagnetic composite ceramic-based heat-radiating substrate of carbon fiber coining |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811214767.9A CN109390452A (en) | 2018-10-17 | 2018-10-17 | A kind of great power LED ferromagnetic composite ceramic-based heat-radiating substrate of carbon fiber coining |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109390452A true CN109390452A (en) | 2019-02-26 |
Family
ID=65426782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811214767.9A Pending CN109390452A (en) | 2018-10-17 | 2018-10-17 | A kind of great power LED ferromagnetic composite ceramic-based heat-radiating substrate of carbon fiber coining |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109390452A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102635203B1 (en) * | 2023-07-06 | 2024-02-13 | 호서대학교 산학협력단 | High heat dissipation metal member and high heat dissipation die casting part with the same |
Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1038722A (en) * | 1988-04-22 | 1990-01-10 | 国家研究发展公司 | Epitaxial deposition |
| CN1059349A (en) * | 1987-05-08 | 1992-03-11 | 富士通株式会社 | A kind of coating that is used to form superconducting ceramic film |
| CN1755923A (en) * | 2004-09-29 | 2006-04-05 | 富士通株式会社 | Fin and manufacture method thereof |
| CN101232774A (en) * | 2007-01-24 | 2008-07-30 | 南京汉德森科技股份有限公司 | High heat conductivity ceramic base printed circuit board and method for making the same |
| CN101948673A (en) * | 2010-08-17 | 2011-01-19 | 南京钛威科技有限公司 | Copper-free ceramic type friction material and preparation method thereof |
| CN102192669A (en) * | 2010-03-05 | 2011-09-21 | 厦门格绿能光电有限公司 | Nanometer carbon fiber vacuum superconducting heat pipe and manufacturing method thereof |
| CN102414874A (en) * | 2009-04-13 | 2012-04-11 | 应用材料公司 | Composite materials containing metallized carbon nanotubes and nanofibers |
| CN202562127U (en) * | 2012-04-23 | 2012-11-28 | 林义民 | Cold-heat exchange device with refrigeration chip with high thermal conductivity |
| CN103187131A (en) * | 2011-12-28 | 2013-07-03 | 北京有色金属研究总院 | High heat conductivity insulation composite and preparation method thereof |
| CN103196172A (en) * | 2013-04-11 | 2013-07-10 | 孙刚 | Efficient-conduction carbon crystal heating radiating device |
| CN203177297U (en) * | 2013-04-11 | 2013-09-04 | 孙刚 | Carbon crystal heating and radiating device with high conduction efficiency |
| CN104708868A (en) * | 2015-03-27 | 2015-06-17 | 东莞市闻誉实业有限公司 | Heat radiating material and LED lamp |
| CN105722375A (en) * | 2016-01-29 | 2016-06-29 | 白德旭 | Graphene radiating apparatus and preparation method therefor |
| CN105741971A (en) * | 2016-03-01 | 2016-07-06 | 河北大学 | Nanostructures superconducting composite film and preparation method thereof |
| CN106220183A (en) * | 2016-07-20 | 2016-12-14 | 合肥毅创钣金科技有限公司 | A kind of great power LED cooling aluminum nitride ceramic substrate toughness reinforcing containing carbon nano-fiber |
| CN107175324A (en) * | 2017-04-14 | 2017-09-19 | 洛阳鹏飞耐磨材料股份有限公司 | A kind of preparation method of metal composite ceramal plate |
| CN107287463A (en) * | 2016-03-30 | 2017-10-24 | 西安法迪复合材料有限公司 | A kind of metal matrix ceramic composites |
| CN107790677A (en) * | 2017-10-19 | 2018-03-13 | 苏州方卓材料科技有限公司 | A kind of ceramic-metal composite |
| CN207124772U (en) * | 2017-06-06 | 2018-03-20 | 山东圣泉新材料股份有限公司 | A kind of graphene Electric radiant Heating Film and the equipment containing graphene Electric radiant Heating Film |
| CN107937838A (en) * | 2017-11-24 | 2018-04-20 | 江苏瑞博光电科技有限公司 | A kind of New LED ceramic heat emission material |
| CN108033810A (en) * | 2017-12-12 | 2018-05-15 | 北京科技大学 | A kind of preparation method of aluminium nitride ceramics copper-clad plate |
| CN108135081A (en) * | 2017-12-21 | 2018-06-08 | 昆山福烨电子有限公司 | A kind of ceramic substrate circuit board |
| CN103730431B (en) * | 2014-01-07 | 2018-08-17 | 宝钢金属有限公司 | A kind of high-power array LED chip surface radiator structure and production method |
-
2018
- 2018-10-17 CN CN201811214767.9A patent/CN109390452A/en active Pending
Patent Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1059349A (en) * | 1987-05-08 | 1992-03-11 | 富士通株式会社 | A kind of coating that is used to form superconducting ceramic film |
| CN1038722A (en) * | 1988-04-22 | 1990-01-10 | 国家研究发展公司 | Epitaxial deposition |
| CN1755923A (en) * | 2004-09-29 | 2006-04-05 | 富士通株式会社 | Fin and manufacture method thereof |
| CN101232774A (en) * | 2007-01-24 | 2008-07-30 | 南京汉德森科技股份有限公司 | High heat conductivity ceramic base printed circuit board and method for making the same |
| CN102414874A (en) * | 2009-04-13 | 2012-04-11 | 应用材料公司 | Composite materials containing metallized carbon nanotubes and nanofibers |
| CN102192669A (en) * | 2010-03-05 | 2011-09-21 | 厦门格绿能光电有限公司 | Nanometer carbon fiber vacuum superconducting heat pipe and manufacturing method thereof |
| CN101948673A (en) * | 2010-08-17 | 2011-01-19 | 南京钛威科技有限公司 | Copper-free ceramic type friction material and preparation method thereof |
| CN103187131A (en) * | 2011-12-28 | 2013-07-03 | 北京有色金属研究总院 | High heat conductivity insulation composite and preparation method thereof |
| CN202562127U (en) * | 2012-04-23 | 2012-11-28 | 林义民 | Cold-heat exchange device with refrigeration chip with high thermal conductivity |
| CN203177297U (en) * | 2013-04-11 | 2013-09-04 | 孙刚 | Carbon crystal heating and radiating device with high conduction efficiency |
| CN103196172A (en) * | 2013-04-11 | 2013-07-10 | 孙刚 | Efficient-conduction carbon crystal heating radiating device |
| CN103730431B (en) * | 2014-01-07 | 2018-08-17 | 宝钢金属有限公司 | A kind of high-power array LED chip surface radiator structure and production method |
| CN104708868A (en) * | 2015-03-27 | 2015-06-17 | 东莞市闻誉实业有限公司 | Heat radiating material and LED lamp |
| CN105722375A (en) * | 2016-01-29 | 2016-06-29 | 白德旭 | Graphene radiating apparatus and preparation method therefor |
| CN105741971A (en) * | 2016-03-01 | 2016-07-06 | 河北大学 | Nanostructures superconducting composite film and preparation method thereof |
| CN107287463A (en) * | 2016-03-30 | 2017-10-24 | 西安法迪复合材料有限公司 | A kind of metal matrix ceramic composites |
| CN106220183A (en) * | 2016-07-20 | 2016-12-14 | 合肥毅创钣金科技有限公司 | A kind of great power LED cooling aluminum nitride ceramic substrate toughness reinforcing containing carbon nano-fiber |
| CN107175324A (en) * | 2017-04-14 | 2017-09-19 | 洛阳鹏飞耐磨材料股份有限公司 | A kind of preparation method of metal composite ceramal plate |
| CN207124772U (en) * | 2017-06-06 | 2018-03-20 | 山东圣泉新材料股份有限公司 | A kind of graphene Electric radiant Heating Film and the equipment containing graphene Electric radiant Heating Film |
| CN107790677A (en) * | 2017-10-19 | 2018-03-13 | 苏州方卓材料科技有限公司 | A kind of ceramic-metal composite |
| CN107937838A (en) * | 2017-11-24 | 2018-04-20 | 江苏瑞博光电科技有限公司 | A kind of New LED ceramic heat emission material |
| CN108033810A (en) * | 2017-12-12 | 2018-05-15 | 北京科技大学 | A kind of preparation method of aluminium nitride ceramics copper-clad plate |
| CN108135081A (en) * | 2017-12-21 | 2018-06-08 | 昆山福烨电子有限公司 | A kind of ceramic substrate circuit board |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102635203B1 (en) * | 2023-07-06 | 2024-02-13 | 호서대학교 산학협력단 | High heat dissipation metal member and high heat dissipation die casting part with the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhang et al. | Carbon nanotube thermal interface material for high-brightness light-emitting-diode cooling | |
| CN102760749B (en) | Luminescent device and preparation method thereof | |
| CN102339758B (en) | Method for manufacturing copper-ceramic substrate by adopting low-temperature bonding | |
| CN103187131B (en) | A kind of high heat conductivity insulation composite and preparation method thereof | |
| CN105198491B (en) | A kind of ceramic substrate preparation method containing conduction copper column | |
| TW201121371A (en) | Electronic substrate having low current leakage and high thermal conductivity and associated methods | |
| CN100454525C (en) | Composite material, electrical circuit or electric module | |
| CN105803241A (en) | Spiral-body-enhanced metal-based or polymer-based composite and preparation method | |
| CN101609802B (en) | Preparation method of low thermal resistance thermal interface | |
| CN108715992A (en) | A kind of integrated circuit ceramic circuit plate surface copper-graphite alkene composite coating and preparation method thereof | |
| CN105304593B (en) | High efficiency and heat radiation substrate for photoelectric device | |
| CN105152689A (en) | Manufacturing method for ceramic-based copper-clad plate | |
| CN113795091A (en) | Method for preparing ceramic circuit board by low-temperature sintering | |
| KR100934476B1 (en) | Circuit board and method of manufacturing the same | |
| KR101101709B1 (en) | Led array heat-radiating module and manufacturing method thereof | |
| CN103917043B (en) | Patterned multi-insulating-material circuit substrate | |
| CN101887942A (en) | Metal baseplate provided with LED and manufacturing method thereof | |
| CN109390452A (en) | A kind of great power LED ferromagnetic composite ceramic-based heat-radiating substrate of carbon fiber coining | |
| CN207678068U (en) | A kind of ultra-high conducting heat type ceramic substrate | |
| CN108486568B (en) | Large-scale graphene/metal heterojunction composite film for heat conduction and preparation method thereof | |
| CN117410818A (en) | Packaging heat sink, laser device and preparation method of packaging heat sink | |
| JPH0852835A (en) | Heat transfer element available especially in electronics aselectronic part or printed circuit board and its production | |
| CN107473774A (en) | The preparation method of copper ceramic substrate | |
| CN107642767A (en) | LED heat radiating materials surface is without viscose glue heat superconducting composite coating, LED heat radiation substrate and preparation method thereof | |
| CN105420679A (en) | Device and method for preparing copper-clad ceramic substrate based on twin-target magnetron sputtering |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190226 |