CN105152689A - Manufacturing method for ceramic-based copper-clad plate - Google Patents
Manufacturing method for ceramic-based copper-clad plate Download PDFInfo
- Publication number
- CN105152689A CN105152689A CN201510346890.6A CN201510346890A CN105152689A CN 105152689 A CN105152689 A CN 105152689A CN 201510346890 A CN201510346890 A CN 201510346890A CN 105152689 A CN105152689 A CN 105152689A
- Authority
- CN
- China
- Prior art keywords
- ceramic
- copper
- metal
- clad plate
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a manufacturing method for a ceramic-based copper-clad plate. The method comprises the following steps: cleaning of a ceramic substrate; ion beam cleaning and activation; metal ion implantation; vacuum coating; and thickening of a copper film through electroplating. The following two film systems can be adopted: (1) metal sedimentary deposit/copper sedimentary deposit; and (2) metal oxide sedimentary deposit/metal sedimentary deposit/copper sedimentary deposit. The manufacturing method has the advantages of high production efficiency, stable quality and low cost; and the manufactured ceramic-based copper-clad plate has the characteristics of low porosity, high thermal conductivity, high peeling strength, good stability, etc.
Description
Technical field
The invention belongs to ceramic base copper-clad plate manufacturing technology field, be specifically related to a kind of manufacture method of ceramic base copper-clad plate.
Background technology
Ceramic base copper-clad plate had both had the features such as the high thermal conductivity coefficient of pottery, high heat-resisting, high electrical insulating properties, high mechanical strength, the thermal expansivity close with silicon and low dielectric loss, there is again high conductivity and the excellent welding performance of oxygen free copper, be current field of power electronics power module package, the critical material connecting chip and heat radiation substrate, be widely used in all kinds of electric installation and electronic product.
At present, the manufacture method of ceramic base copper-clad plate mainly contains two kinds: (1) Direct Bonding copper technology (DBC), (2) direct copper plating technology (DPC).
DBC is by Al
2o
3or after the single or double of AlN ceramic is covered with Cu plate, then heat via the environment of high temperature 1065 ~ 1085 DEG C, make Cu plate surface because of high temperature oxidation, diffusion and Al
2o
3substrate produces Cu-Cu
2o eutectic phase, makes copper coin and ceramic substrate bind, and forms ceramic base copper-clad plate.DBC is very harsh to the control overflow of technological temperature, must, under extremely stable 1065 ~ 1085 DEG C of temperature ranges of temperature, layers of copper surface melting just can be made to be eutectic phase, realizes and the combining closely of ceramic substrate, and its manufacturing cost is high and not easily solve Al
2o
3and the problems such as the micro-pore existed between Cu plate or hole, make the production capacity of this product and yield rate be subject to extreme influence.Because of the restriction of technological ability, the lower thickness limit of Cu plate is between 150 ~ 300um, this makes the resolution upper limit of its metallic circuit also be only (with depth-to-width ratio 1:1 for standard) between 150 ~ 300um, then must adopt special processing mode that copper layer thickness is thinning to make fine rule road, but this can cause again the problems such as the not good and cost increase of its surface finish, the copper-clad plate of DBC ceramic base is made to be unsuitable for requiring the eutectic of elevated track precision and high-flatness/cover brilliant technique to use.
DPC is a kind of copper-clad plate manufacturing technology that vacuum plating and electroplating technology are combined, and its principle first utilizes vacuum coating technology at Al
2o
3or AlN ceramic deposits one deck copper film, then carry out thickening of copper film with electroplating technology.The technological temperature of DPC, generally lower than 400 DEG C, avoids the phenomenon of destruction that high temperature causes for material or size variation.The copper-clad plate of DPC ceramic base has the advantages such as high heat radiation, high-reliability, high accurancy and precision and low cost of manufacture.The metallic circuit resolution upper limit (with depth-to-width ratio 1:1 for standard) between 10 ~ 50um of DPC ceramic base copper-clad plate, even can be thinner, and surface finish is high, be therefore very suitable for requiring that the crystalline substance/eutectic technology that covers of elevated track precision and high-flatness uses.
The copper-clad plate of DPC ceramic base is the ceramic base copper-clad plate the most generally used now, but its integration ability to Technology requires higher, this makes to stride into DPC ceramic base copper-clad plate industry and the technical threshold of energy stably manufactured is relatively high, and the greatest problem that industrialization exists in producing is that the bonding force of ceramic substrate and Copper Foil is difficult to ensure.
Summary of the invention
The object of the invention is to propose a kind of brand-new ceramic base copper-clad plate manufacture method, the ceramic species be applicable to has: alumina-ceramic, aluminium nitride ceramics, beryllium oxide ceramics, silicon nitride ceramics, silicon carbide ceramics, boron nitride ceramics, titanium dioxide ceramic, zirconia ceramics, calcium titanate pottery, barium titanate ceramics, mullite ceramic, steatite ceramic or glass-ceramic, production efficiency is high, steady quality, cost are low, and the ceramic base copper-clad plate of manufacture has the advantages that porosity is low, thermal conductivity is high, stripping strength is high.
The manufacture method of described ceramic base copper-clad plate comprises:
(1) ceramic substrate cleaning
Ceramic substrate cleaning adopts existing current techique, and general step is: the ultrasonic oil removing of organic solvent → deionized water ultrasonic cleaning → pressurized air dries up.
(2) the ion beam cleaning activation of ceramic substrate
Adopt gas ion source to carry out ion beam cleaning activation to ceramic base plate surface, working gas can be Ar, N
2, O
2, other rare gas element or their gas mixture, vacuum tightness is 0.01 ~ 10Pa, is preferably 0.1 ~ 0.3Pa.The technological temperature of cleaning activation is normal temperature ~ 400 DEG C, is preferably 200 DEG C.
(3) metal ion implantation of ceramic substrate
When vacuum tightness is better than 0.1Pa, metal ion implantation is carried out to ceramic substrate, form the ion implanted layer (see Fig. 1, Fig. 2) of a few nano thickness at ceramic base plate surface.Metal ion can be one or more in the metal ions such as Ag, Au, Al, Be, Co, Cr, Cu, Fe, Mg, Mo, Mn, Nb, Ni, Pt, Ta, W, Zr in the periodic table of elements, and ion implantation technological temperature is normal temperature ~ 400 DEG C.Ion implantation acceleration voltage is 5 ~ 100kV, and implantation dosage is 1.0 × 10
12~ 1.0 × 10
18ion/cm
2, be preferably acceleration voltage 30kV, implantation dosage 3.0 × 10
15ion/cm
2.
(4) vacuum plating of ceramic substrate
Vacuum plating adopts vacuum cathode arc depositional mode.Working gas can be Ar gas or O
2gas, vacuum tightness is 0.01 ~ 10Pa, is preferably 0.1 ~ 0.2Pa.Adopt and carry out metallic diaphragm deposition with the same material of metal ion implantation or other material, rete can be metal and their binary, ternary and the quad alloys such as Ag, Au, Al, Be, Co, Cr, Cu, Fe, Mg, Mo, Mn, Nb, Ni, Pt, Ta, W, Zr in the periodic table of elements.
Rete system, according to the requirement of product, can adopt two kinds of film systems: 1. metal deposition layer/copper deposits (see Fig. 1); 2. metal oxide settled layer/metal deposition layer/copper deposits (see Fig. 2).Metal deposition layer thickness is 5 ~ 2000nm, is preferably 50 ~ 100nm; Metal oxide deposit thickness is 5 ~ 2000nm, is preferably 10 ~ 50nm; Copper deposits thickness is 5 ~ 2000nm, is preferably 50 ~ 100nm.The technological temperature of vacuum plating is normal temperature ~ 400 DEG C.
(5) plating thickens copper film
Plating thickens one or more that copper film can adopt in the different sorts copper electroplating methods such as vitriol bright copper plating, pyrophosphate copper plating, electroless copper, and the thickness of its copper plate is at 2 ~ 1000 μm.
Accompanying drawing explanation
Fig. 1 is the schema of the inventive method;
Fig. 2 is first embodiment of the invention---there is the ceramic base copper-clad plate schematic diagram of metal deposition layer/copper deposits film structure;
Fig. 3 is second embodiment of the invention---there is the ceramic base copper-clad plate schematic diagram of metal oxide settled layer/metal deposition layer/copper deposits film structure.
Embodiment
For making the technical solution used in the present invention and the technique effect reached clearly, below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.Also it should be noted that in addition, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
First embodiment
Fig. 1 is first embodiment of the invention---have the ceramic base copper-clad plate schematic diagram of metal deposition layer/copper deposits film structure, manufacture method comprises following operation:
(1) ceramic substrate cleaning
1.1) specification of aluminum oxide 96 ceramic plate is 100mm × 100mm × 0.38mm;
1.2) clean: the ultrasonic oil removing of alcohol → deionized water ultrasonic cleaning → pressurized air dries up.
(2) the ion beam cleaning activation of ceramic substrate
2.1) ceramic plate after cleaning loads the work rest in Magnetic filter scanning vacuum cathode arc filming equipment vacuum chamber;
2.2) vacuumize, start and the revolution of ceramic plate work rest is housed, 200 DEG C of temperature control heating are set;
2.3) when vacuum tightness is better than 0.01Pa, pass into Ar gas to 0.2Pa, start Hall gas ion source and ion beam cleaning activation is carried out to ceramic base plate surface.
(3) ceramic substrate is ion implantation
3.1) Ar gas is closed;
3.2) when vacuum tightness is better than 0.1Pa, Ni ion implantation is carried out to ceramic plate, source metal acceleration voltage is 30kV, implantation dosage is 3.0 × 10
15ion/cm
2.
(4) vacuum plating of ceramic substrate
4.1) Ar gas is passed into 0.2Pa;
4.2) Magnetic filter scanning vacuum cathode arc nickel arc source is started, at the nickel film of ceramic plate surface deposition 54nm;
4.3) Magnetic filter scanning vacuum cathode arc copper arc source is started, at the copper film of ceramic plate surface deposition 86nm.
(5) plating thickens copper film
Copper film 103 μm is thickened by vitriol bright copper plating method.
Second embodiment
Fig. 2 is second embodiment of the invention---have the ceramic base copper-clad plate schematic diagram of metal oxide settled layer/metal deposition layer/copper deposits film structure, manufacture method comprises following operation:
(1) ceramic substrate cleaning
1.1) specification of aluminum oxide 96 ceramic plate is 100mm × 100mm × 0.38mm;
1.2) clean: the ultrasonic oil removing of alcohol → deionized water ultrasonic cleaning → pressurized air dries up.
(2) the ion beam cleaning activation of ceramic substrate
2.1) ceramic plate after cleaning loads the work rest in Magnetic filter scanning vacuum cathode arc filming equipment vacuum chamber;
2.2) vacuumize, start and the revolution of ceramic plate work rest is housed, 200 DEG C of temperature control heating are set;
2.3), when vacuum tightness is better than 0.01Pa, O is passed into
2gas, to 0.2Pa, starts Hall gas ion source and carries out ion beam cleaning activation to ceramic base plate surface.
(3) ceramic substrate is ion implantation
3.1) O is reduced
2airshed is better than 0.1Pa to vacuum tightness;
3.2) Ni ion implantation is carried out to ceramic plate, source metal acceleration voltage is 30kV, implantation dosage is 3.0 × 10
15ion/cm
2.
(4) vacuum plating of ceramic substrate
4.1) O is passed into
2airshed is to 0.2Pa;
4.2) Magnetic filter scanning vacuum cathode arc nickel arc source is started, at the nickel oxide film of ceramic plate surface deposition 14nm thickness;
4.3) O is closed
2gas, passes into Ar airshed to 0.2Pa;
4.4) start Magnetic filter scanning vacuum cathode arc nickel arc source, continue the nickel film of deposition 41nm thickness on ceramic plate nickel oxide film surface;
4.5) Magnetic filter scanning vacuum cathode arc copper arc source is started, at the copper film of ceramic plate nickel film surface deposition 86nm thickness.
(5) plating thickens copper film
Copper film 103 μm is thickened with the plating of vitriol bright copper plating method.
The difference of the first embodiment of the present invention and the second embodiment is that the second embodiment adds in the vacuum plating stage nickel oxide film that one deck thickness is 14nm, and test result confirms that nickel oxide film can strengthen the film-substrate cohesion on nickel film and aluminum oxide 96 ceramic plate surface.
Test result
Test result shows, the aluminum oxide 96 porcelain copper-clad plate stripping strength adopting the inventive method to manufacture, thermal conductivity are all very high, and porosity detects.
Foregoing is only preferred embodiment of the present invention.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (5)
1. a manufacture method for ceramic base copper-clad plate, is characterized in that comprising following operation:
(1) ceramic substrate cleaning;
(2) the ion beam cleaning activation of ceramic substrate;
(3) metal ion implantation of ceramic substrate;
(4) vacuum plating of ceramic substrate;
(5) plating thickens copper film.
2. the manufacture method of ceramic base copper-clad plate according to claim 1, it is characterized in that the ion beam cleaning activation described in operation (2) carries out ion beam cleaning activation for adopting gas ion source to ceramic base plate surface, working gas can be Ar, N
2, O
2, other rare gas element or their gas mixture, vacuum tightness is 0.01 ~ 10Pa, and the technological temperature of cleaning activation is normal temperature ~ 400 DEG C.
3. the manufacture method of ceramic base copper-clad plate according to claim 1, it is characterized in that one or more that the metal ion implantation described in operation (3) can be in the metal ions such as Ag, Au, Al, Be, Co, Cr, Cu, Fe, Mg, Mo, Mn, Nb, Ni, Pt, Ta, W, Zr in the periodic table of elements, during injection, vacuum tightness is better than 0.1Pa, acceleration voltage 5 ~ 100kV, implantation dosage 1.0 × 10
12~ 1.0 × 10
18ion/cm
2, technological temperature is normal temperature ~ 400 DEG C.
4. the manufacture method of ceramic base copper-clad plate according to claim 1, is characterized in that the vacuum plating described in operation (4) is vacuum cathode arc depositional mode.Adopt and carry out metallic diaphragm deposition with the same material of metal ion implantation or other material, rete can be metal and their binary, ternary and the quad alloys such as Ag, Au, Al, Be, Co, Cr, Cu, Fe, Mg, Mo, Mn, Nb, Ni, Pt, Ta, W, Zr in the periodic table of elements.
Rete system, according to the requirement of product, can adopt two kinds of film systems: 1. metal deposition layer/copper deposits; 2. metal oxide settled layer/metal deposition layer/copper deposits, metal deposition layer thickness is 5 ~ 2000nm; Metal oxide deposit thickness is 5 ~ 2000nm; Copper deposits thickness is 5 ~ 2000nm, and the technological temperature of vacuum plating is normal temperature ~ 400 DEG C.
5. according to the ceramic base copper-clad plate in claim 1-4 described in any one, wherein, described ceramic substrate material is alumina-ceramic, aluminium nitride ceramics, beryllium oxide ceramics, silicon nitride ceramics, silicon carbide ceramics, boron nitride ceramics, titanium dioxide ceramic, zirconia ceramics, calcium titanate pottery, barium titanate ceramics, mullite ceramic, steatite ceramic or glass-ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510346890.6A CN105152689A (en) | 2015-06-23 | 2015-06-23 | Manufacturing method for ceramic-based copper-clad plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510346890.6A CN105152689A (en) | 2015-06-23 | 2015-06-23 | Manufacturing method for ceramic-based copper-clad plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105152689A true CN105152689A (en) | 2015-12-16 |
Family
ID=54793812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510346890.6A Pending CN105152689A (en) | 2015-06-23 | 2015-06-23 | Manufacturing method for ceramic-based copper-clad plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105152689A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107032817A (en) * | 2017-05-27 | 2017-08-11 | 烟台柳鑫新材料科技有限公司 | A kind of new ceramics base copper-clad plate and preparation method thereof |
| CN107459370A (en) * | 2017-08-15 | 2017-12-12 | 上海双石钛金有限公司 | A kind of colorful coating of ceramic base and preparation method thereof |
| CN108966517A (en) * | 2017-05-19 | 2018-12-07 | 北大方正集团有限公司 | The electro-plating method of circuit board |
| CN109137035A (en) * | 2018-08-29 | 2019-01-04 | 谢新林 | A kind of preparation method of aluminum-based copper-clad plate |
| CN109251054A (en) * | 2018-09-30 | 2019-01-22 | 深圳嘉龙微电子有限公司 | A kind of ceramic copper-clad base plate and its manufacturing method |
| CN111848226A (en) * | 2019-04-24 | 2020-10-30 | 成都大学 | Nano metal layer ceramic substrate and manufacturing method thereof |
| CN112323034A (en) * | 2019-08-05 | 2021-02-05 | 武汉光谷创元电子有限公司 | Vacuum processing apparatus |
| CN113278934A (en) * | 2021-04-26 | 2021-08-20 | 深圳市新邦薄膜科技有限公司 | Method for continuously depositing copper plating film by vacuum sputtering |
| CN114592176A (en) * | 2021-12-31 | 2022-06-07 | 核工业西南物理研究院 | Ion implantation method for replacing metal transition connection layer |
| CN117510097A (en) * | 2023-12-29 | 2024-02-06 | 核工业西南物理研究院 | Silicon-based ceramic surface metallization method and application |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1084903A (en) * | 1992-09-28 | 1994-04-06 | 大连理工大学 | Full element ion beam material surface modifying technology |
| CN101003439A (en) * | 2006-11-09 | 2007-07-25 | 中国矿业大学 | Ion implantation of cupper, nickel as pretreatment technique for electroless copper on surface of ceramics |
| CN102896832A (en) * | 2011-07-28 | 2013-01-30 | 中国科学院金属研究所 | Power module metalized ceramic substrate and metallization method thereof |
-
2015
- 2015-06-23 CN CN201510346890.6A patent/CN105152689A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1084903A (en) * | 1992-09-28 | 1994-04-06 | 大连理工大学 | Full element ion beam material surface modifying technology |
| CN101003439A (en) * | 2006-11-09 | 2007-07-25 | 中国矿业大学 | Ion implantation of cupper, nickel as pretreatment technique for electroless copper on surface of ceramics |
| CN102896832A (en) * | 2011-07-28 | 2013-01-30 | 中国科学院金属研究所 | Power module metalized ceramic substrate and metallization method thereof |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108966517A (en) * | 2017-05-19 | 2018-12-07 | 北大方正集团有限公司 | The electro-plating method of circuit board |
| CN107032817A (en) * | 2017-05-27 | 2017-08-11 | 烟台柳鑫新材料科技有限公司 | A kind of new ceramics base copper-clad plate and preparation method thereof |
| CN107459370A (en) * | 2017-08-15 | 2017-12-12 | 上海双石钛金有限公司 | A kind of colorful coating of ceramic base and preparation method thereof |
| CN109137035A (en) * | 2018-08-29 | 2019-01-04 | 谢新林 | A kind of preparation method of aluminum-based copper-clad plate |
| CN109251054A (en) * | 2018-09-30 | 2019-01-22 | 深圳嘉龙微电子有限公司 | A kind of ceramic copper-clad base plate and its manufacturing method |
| CN111848226A (en) * | 2019-04-24 | 2020-10-30 | 成都大学 | Nano metal layer ceramic substrate and manufacturing method thereof |
| CN112323034A (en) * | 2019-08-05 | 2021-02-05 | 武汉光谷创元电子有限公司 | Vacuum processing apparatus |
| CN112323034B (en) * | 2019-08-05 | 2023-10-17 | 武汉光谷创元电子有限公司 | Vacuum processing apparatus |
| CN113278934A (en) * | 2021-04-26 | 2021-08-20 | 深圳市新邦薄膜科技有限公司 | Method for continuously depositing copper plating film by vacuum sputtering |
| CN114592176A (en) * | 2021-12-31 | 2022-06-07 | 核工业西南物理研究院 | Ion implantation method for replacing metal transition connection layer |
| CN114592176B (en) * | 2021-12-31 | 2023-02-21 | 核工业西南物理研究院 | Ion implantation method for replacing metal transition connection layer |
| CN117510097A (en) * | 2023-12-29 | 2024-02-06 | 核工业西南物理研究院 | Silicon-based ceramic surface metallization method and application |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105152689A (en) | Manufacturing method for ceramic-based copper-clad plate | |
| US20160014878A1 (en) | Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom | |
| US8130485B2 (en) | Ceramic electronic component and method for manufacturing the same | |
| CN105777210B (en) | A kind of aluminium nitride ceramics copper-clad plate and preparation method thereof | |
| JPWO2013111625A1 (en) | Electronic component and manufacturing method thereof | |
| CN106537580B (en) | Ceramic circuit board and method for manufacturing the same | |
| CN108715992A (en) | A kind of integrated circuit ceramic circuit plate surface copper-graphite alkene composite coating and preparation method thereof | |
| CN101003439A (en) | Ion implantation of cupper, nickel as pretreatment technique for electroless copper on surface of ceramics | |
| JP2008518447A (en) | High energy density condenser | |
| CN113795091A (en) | Method for preparing ceramic circuit board by low-temperature sintering | |
| CN109354512A (en) | A kind of preparation method of high thermal conductivity silicon nitride ceramics Electroless copper | |
| JPWO2002045470A1 (en) | Substrate and method of manufacturing the same | |
| JP5324247B2 (en) | Multilayer ceramic capacitor | |
| CN108305838B (en) | Low-temperature chip mounting method and chip mounting structure without organic matters | |
| JP4665866B2 (en) | Manufacturing method of valve metal composite electrode foil | |
| KR101961123B1 (en) | Ceramic metalizing substrate and manufacturing method thereof | |
| KR102212836B1 (en) | Method of manufacturing ceramic circuit board | |
| EP4015486B1 (en) | Ceramic substrate, circuit board and method for producing same, and power module | |
| EP3302010A1 (en) | Circuit board and method for producing a circuit board | |
| JP2008252019A (en) | Method for manufacturing thin-film capacitor | |
| JPH0785495B2 (en) | Method of forming copper electrode on oxide ceramics | |
| JPH0745957A (en) | Aluminum nitride multilayer wiring board provided with high-dielectric layer and its manufacture | |
| Yoon et al. | Growth of batio3–ag hybrid composite films at room temperature by aerosol deposition | |
| Mou et al. | A novel copper-coated ceramic substrate prepared by nano thermocompression bonding | |
| JP2008198794A (en) | Solid-state electrolytic capacitor and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151216 |
|
| RJ01 | Rejection of invention patent application after publication |