CN105198491B - A kind of ceramic substrate preparation method containing conduction copper column - Google Patents
A kind of ceramic substrate preparation method containing conduction copper column Download PDFInfo
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- CN105198491B CN105198491B CN201510583151.9A CN201510583151A CN105198491B CN 105198491 B CN105198491 B CN 105198491B CN 201510583151 A CN201510583151 A CN 201510583151A CN 105198491 B CN105198491 B CN 105198491B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 23
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- 238000001802 infusion Methods 0.000 claims description 3
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Landscapes
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention provides a kind of ceramic substrate preparation method containing conduction copper column.Through hole is prepared using laser drilling on a ceramic substrate first；Again by sputtering technology in substrate surface deposited metal Seed Layer, and by electroplating increase seed layer thickness；Then substrate is immersed in the solid wall liquid of nano-carbon material preparation, by ultrasound or jet-action in hole wall formation conducting film；Finally by graphic plating and etching process, surface is prepared containing metallic circuit, the internal ceramic substrate containing conduction copper column.Because nano-carbon material electrical and thermal conductivity performance is excellent, make a concerted effort by force, to improve ceramic substrate performance and reliability with ceramic junction.Meanwhile, conduction copper column is prepared using nano-sized carbon wall bracing technology, compared with existing chemical plating and conducting polymer hole filling technology, with technique is simple, material environment friendly, low cost and other advantages are adapted to batch production.
Description
Technical field
The invention belongs to electronic manufacturing field, more particularly to a kind of ceramic substrate preparation method containing conduction copper column.
Background technology
It is double with large-power light-emitting diodes (LED), insulated gate as three-dimensional packaging technology development and level of integrated system are improved
Gated transistors (IGBT), laser diode (LD) etc. for representative power device manufacturing process in, the preparation and choosing of heat-radiating substrate
With as crucial sport technique segment, and directly influence the performance and reliability of device.By taking high power LED device as an example,
Because the 70%-80% of input electric power is changed into heat (only about 20%-30% is converted into luminous energy), and LED core is unilateral
Product is small, and device power density is very big (to be more than 100W/cm2), therefore radiating turns into the crucial skill that high-power LED encapsulation must be solved
Art.Export and dissipate if chip can not generate heat in time, amount of heat will accumulate in inside LED, and junction temperature of chip will progressively rise
Height, on the one hand makes LED performances reduction (such as luminous efficiency reduction, red shift of wavelength), on the other hand will be produced in LED package
Thermal stress, triggers a series of integrity problems (such as service life reduction, colour temperature change).
For power electronic device encapsulation, substrate will also in addition to possessing basic support, wiring (electrical interconnection) function
Ask with higher heat conduction, insulation, high temperature resistant, proof voltage ability and thermal matching energy.Conventional heat-radiating substrate is TFC at present
(thick film ceramic substrate), DBC (Direct Bonding ceramic substrate) and DPC (Direct Electroplating ceramic substrate).Wherein, TFC uses silk screen
Printing is prepared with high-sintering process, and cost is relatively low, but circuit low precision (being more than 0.2mm), and is difficult to prepare conduction copper column knot
Structure；And DBC is by copper foil and potsherd that eutectic sintering is formed at high temperature, finally according to cabling requirement, formed mutually with etching mode
Line road.High with interface bond strength, electric current leads to the advantages of loading capability is big, is especially suitable for IGBT device encapsulation requirement.But by
The eutectic reaction that make use of under high temperature in preparation process and (be more than 1000 DEG C), it is higher to equipment and process control needs, it is produced into
This is higher, can not also prepare conduction copper column structure.
DPC substrate preparation technology flows are as shown in figure 1, be characterized in the kind electroplated using sputter coating as ceramic surface
Sublayer, the Seed Layer electroplated in ceramic hole is used as using electroless copper.The technique is first with laser drilling in ceramic base
Through hole is formed on piece, then using sputter coating mode in ceramic substrate surface deposited metal Seed Layer, then with chemical plating reality
Existing the via hole, completes graphic making by photoetching, developing process, increases copper layer thickness and filling perforation with plating mode, finally
Made by removing photoresist and corroding Seed Layer completing substrate.Semiconductor fabrication is employed because prepared by DPC, with technological temperature
It is low, the advantages of circuit is fine, and conductive and heat-conductive copper post can be prepared on ceramic substrate, be especially suitable for that alignment precision is high, collection
Into the high high-power LED encapsulation demand of density.
Existing DPC (conductive paste filling perforation) preparation technology flows are as shown in Fig. 2 it is directly filled in ceramics using conductive paste
Hole, is prepared by graphic plating completing substrate.
Key prepared by DPC substrates is prepared by conduction copper column.It is general to be formed on a ceramic substrate using laser drilling
Through hole, is then filled using electro-coppering, realizes the interconnection and interflow (conductive and heat conduction) of ceramic substrate upper and lower surface.But due to
Ceramics are insulator, it is necessary to make that plating filling perforation could be realized after hole wall is conductive.Conventional technical scheme includes at present：1) magnetic is used
Sputtering technology is controlled in hole wall Direct precipitation metal.But for the straight hole that aperture is smaller, aspect ratio is larger, it is impossible to realize hole wall metal
The all standing of layer, makes to electroplate that steel structure is discontinuous, be difficult to interconnect in the hole in；2) hole wall metal is realized using electroless plating technology
Change, as shown in Figure 1.Shortcoming is that chemical plating process is complicated, and three-waste pollution is serious (reducing agent formaldehyde is harmful to), using by very big
Limitation；3) through hole, such as Fig. 2 are directly filled using conducting polymer (such as conductive paste or conducting resinl).Shortcoming is that filling small hole is stranded
Needed after difficulty, filling perforation be heating and curing (sintering), and the electrical and thermal conductivity performance of filler is poor.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art, a kind of ceramic substrate preparation side containing conduction copper column is proposed
Method, the characteristics of ceramic substrate has high yield rate and be highly reliable.
A kind of ceramic substrate preparation method containing conduction copper column that the present invention is provided, be first by laser boring and prepare have
The ceramic substrate of Seed Layer is placed in the solid wall liquid of nano-carbon material preparation, is taken out and is dried after time of infusion under ultrasonication
It is dry, form conducting film on ceramic hole wall；Finally by graphic plating and etching process, surface is prepared containing metallic circuit, it is interior
Ceramic substrate of the portion containing conduction copper column.
The present invention substitutes traditional chemical-copper-plating process using nano-carbon material wall bracing technology, is formed using physical action
Conducting film is directly electroplated, and prepares the ceramic substrate containing conduction copper column.Due to leading for nano-carbon material wall bracing technology formation
Electrolemma function admirable, makes a concerted effort by force, to improve ceramic substrate yield rate and reliability with ceramic junction, and technique is simple, material environment friendly,
Cost is low.
Brief description of the drawings
Fig. 1 is existing DPC substrates preparation technology flow chart (chemical plating filling perforation).
Fig. 2 is existing DPC substrates preparation technology flow chart (conductive paste filling perforation).
Fig. 3 is DPC ceramic substrates preparation technology flow chart of the present invention (nano-sized carbon Gu Bi processing).
Fig. 4 is the solid wall process chart of nano-carbon material of the present invention.
Fig. 5 is nano-carbon material wall bracing technology schematic diagram of the present invention.Wherein 51 be ceramic substrate, and 52 be ceramic through hole, 53
It is nano-carbon layer (conducting film) for metal seed layer, 54,55 be metallic circuit layer, and 56 be plating copper post.
Embodiment
The embodiment to the present invention is described further below in conjunction with the accompanying drawings.Herein it should be noted that for
The explanation of these embodiments is used to help understand the present invention, but does not constitute limitation of the invention.In addition, disclosed below
As long as each of the invention embodiment in involved technical characteristic do not constitute conflict each other and can just be mutually combined.
As shown in figure 3, the DPC ceramic substrate preparation method flows that the present invention is provided are as follows：Laser boring skill is used first
Art prepares through hole and is cleaned by ultrasonic on a ceramic substrate, then by sputtering technology in substrate surface and aperture deposited metal kind
Sublayer, and by electroplating increase seed layer thickness to 2-5 microns；Then Gu Bi processing is carried out in hole wall shape using nano-carbon material
Into conducting film (such as Figure 4 and 5)；Obtain the ceramic substrate with conducting film through hole；(paste dry film, photoetching finally by graphic plating, show
Shadow with plating) and etching process (etching Seed Layer) prepare the ceramic substrate containing metallic circuit and conduction copper column.
Process by nano-carbon material wall bracing technology in hole wall formation conducting film is described as follows：
In the solid wall liquid that ceramic substrate after laser boring is placed in nano-carbon material preparation, one is impregnated under ultrasonication
Drying is taken out after the section time, conducting film is formed on ceramic hole wall.
The nano-carbon material is graphene, nano graphite flakes, nano-carbon powder or its mixture etc.；The spy of nano-carbon material
Size (sheet thickness or particle diameter) is levied less than or equal to 300nm, preferred scope is 1.0-100.0nm；The solid wall liquid is by receiving
Rice carbon material, deionized water and surfactant composition, the wherein quality of nano-carbon material are 1.0-5.0% than content；It is described
Gu wall liquid pH value is 9.5-10.5, it is adjusted by sodium hydroxide or ammoniacal liquor；The surfactant can select dodecyl
Benzene sulfonic acid sodium salt, alkyl phosphorus carboxylate or calgon etc., its volume ratio content are 0.1-1.0%；The ultrasonic immersing time
For 3-5 minutes, drying temperature was 50-70 DEG C.
The Ceramic Substrate Material is aluminum oxide, aluminium nitride, beryllium oxide, carborundum etc.；The through-hole diameter is 50-
200um。
Example：
Embodiment 1
The present embodiment process step is：
1) punch：Laser is used to prepare a diameter of 100um array on alumina ceramic substrate (thickness is 0.5mm)
Through hole；
2) pre-treatment：Ceramic substrate is cleaned by ultrasonic 5 minutes in deionized water, acetone, ethanol solution successively, after drying
Dry (100 DEG C, 30 minutes)；
3) sputter coating：Ceramic substrate is placed in coating machine, 200nm is sequentially depositing in substrate surface by sputtering technology
Titanium (Ti) and 200nm copper (Cu) are used as Seed Layer；
4) plating is thickened：Using electric plating of whole board copper technology, it is 3 μm to make seed layer thickness increase；
5) solid wall liquid is configured：1 gram of graphene, 100 grams of deionized waters, 1ml calgons are uniformly mixed, passed through
Potassium hydroxide regulation solution pH value is 10.0；
6) Gu Bi：Ceramic substrate is put into solid wall liquid, taken out under ultrasonication after room temperature immersion 3min, 50~60
Dried at DEG C；
7) microcorrosion：Ceramic substrate is placed in 5% sodium peroxydisulfate solution, gone by the injection and corrosiveness of solution
Except the graphene adsorbed on ceramic surface copper film；
8) graphic plating and filling perforation：By thickness for 50um dry film laminating on a ceramic substrate, pass through exposure, developing process
Realize graphically, then copper layer thickness is increased to 35um by plating, and realize filling perforation；
9) remove photoresist and corrode：Remaining dry film glue is removed using 10% potassium hydroxide solution, and corrodes residual using sulfuric acid solution
The Seed Layer stayed；
10) it is surface-treated：3um silver layers are deposited on layers of copper surface using Electroless Silver Plating, substrate is finally placed in 1% and resisted
Soak 3 minutes, dry rear standby in oxidation solution.
Embodiment 2：
The present embodiment process step is：
1) punch：Laser is used to prepare a diameter of 200um array on aluminium nitride ceramic substrate (thickness is 1.0mm)
Through hole；
2) pre-treatment：Ceramic substrate is cleaned by ultrasonic 5 minutes in deionized water, acetone, ethanol solution successively, after drying
Dry (100 DEG C, 30 minutes)；
3) sputter coating：Ceramic substrate is placed in coating machine, 100nm is sequentially depositing in substrate surface by sputtering technology
Titanium (Ti) and 200nm copper (Cu) are used as Seed Layer；
4) plating is thickened：Using electric plating of whole board copper technology, seed layer thickness is set to increase to 5 μm；
5) solid wall liquid is configured：3 grams of nano graphite flakes, 100 grams of deionized waters, the stirring mixing of 2ml alkyl phosphorus carboxylic acid sodium are equal
Even, it is 10.5 to adjust solution pH value by ammoniacal liquor；
6) Gu Bi：Ceramic substrate is put into solid wall liquid, taken out under ultrasonication after room temperature immersion 5min, 50~60
Dried at DEG C；
7) microcorrosion：Ceramic substrate is placed in 10.0% sodium peroxydisulfate solution, made by the injection and corrosion of solution
The graphite flake adsorbed with removing on ceramic surface copper film；
8) graphic plating and filling perforation：By thickness for 100um dry film laminating on a ceramic substrate, pass through exposure, development work
Skill is realized graphically, then copper layer thickness is increased to 80um by plating, and realizes filling perforation；
9) remove photoresist and corrode：Remaining dry film glue is removed using 10% potassium hydroxide solution, and corrodes residual using sulfuric acid solution
The Seed Layer stayed；
10) it is surface-treated：3um nickel dams and 0.1um gold are deposited on layers of copper surface using chemical nickel and gold (NiAu) technique successively
Layer, it is standby after rinsing drying.
Embodiment 3：
The present embodiment process step is：
1) punch：Laser is used to prepare a diameter of 50um array on beryllium oxide ceramics substrate (thickness is 0.38mm)
Through hole；
2) pre-treatment：Ceramic substrate is cleaned by ultrasonic 5 minutes in deionized water, acetone, ethanol solution successively, after drying
Dry (100 DEG C, 30 minutes)；
3) sputter coating：Ceramic substrate is placed in coating machine, 100nm is sequentially depositing in substrate surface by sputtering technology
Titanium (Ti) and 200nm copper (Cu) are used as Seed Layer；
4) plating is thickened：Using electric plating of whole board copper technology, seed layer thickness is set to increase to 2 μm；
5) solid wall liquid is configured：By 5 grams of nano-carbon powders, 100 grams of deionized waters, the stirring mixing of 3ml neopelexes
Uniformly, it is 9.5 to adjust solution pH value by potassium hydroxide；
6) Gu Bi：Ceramic substrate is put into solid wall liquid, taken out under ultrasonication after room temperature immersion 3min, 50~60
Dried at DEG C；
7) microcorrosion：Ceramic substrate is placed in 10.0% sodium peroxydisulfate solution, made by the injection and corrosion of solution
The nano-carbon powder adsorbed with removing on ceramic surface copper film；
8) graphic plating and filling perforation：By thickness for 60um dry film laminating on a ceramic substrate, pass through exposure, developing process
Realize graphically, then copper layer thickness is increased to 30um by plating, and realize filling perforation；
9) remove photoresist and corrode：Remaining dry film glue is removed using 10% potassium hydroxide solution, and corrodes residual using sulfuric acid solution
The Seed Layer stayed；
10) it is surface-treated：2um silver layers are deposited on layers of copper surface using Electroless Silver Plating, substrate is finally placed in 1% and resisted
Soak 3 minutes, dry rear standby in oxidation solution.
Described above is presently preferred embodiments of the present invention, but the present invention should not be limited to the embodiment and accompanying drawing institute
Disclosure.So every do not depart from the lower equivalent or modification completed of spirit disclosed in this invention, guarantor of the present invention is both fallen within
The scope of shield.
Claims (8)
1. a kind of prepare the method with conducting film through hole on a ceramic substrate, this method is by laser boring and preparation has Seed Layer
Ceramic substrate be placed in nano-carbon material preparation solid wall liquid in, after time of infusion under ultrasonication take out drying,
Conducting film is formed on ceramic hole wall,
The solid wall liquid is made up of nano-carbon material, deionized water and surfactant, is existed using nano-carbon material wall bracing technology
Hole wall formation conducting film,
The mass content of nano-carbon material is 1.0-5.0% in the solid wall liquid, and the volume ratio content of surfactant is 0.1-
1.0%,
The solid wall liquid pH value is 9.5-10.5, is adjusted by sodium hydroxide or ammoniacal liquor.
2. a kind of as claimed in claim 1 prepare the method with conducting film through hole on a ceramic substrate, it is characterised in that described
Nano-carbon material is graphene, nano graphite flakes, nano-carbon powder or its mixture, and its characteristic size is less than or equal to 300nm.
3. a kind of as claimed in claim 2 prepare the method with conducting film through hole on a ceramic substrate, it is characterised in that described
The ultrasonic immersing time is 3-5 minutes, and drying temperature is 50-70 DEG C, and the seed layer thickness is 2.0-5.0 μm.
4. a kind of as claimed in claim 3 prepare the method with conducting film through hole on a ceramic substrate, it is characterised in that described
Surfactant is neopelex, alkyl phosphorus carboxylate or calgon.
5. a kind of as claimed in claim 1 prepare the method with conducting film through hole on a ceramic substrate, it is characterised in that described
Nano-carbon material is graphene, nano graphite flakes, nano-carbon powder or its mixture, and its optimal characteristics size is 1.0nm-
100.0nm。
6. a kind of ceramic substrate preparation method containing conduction copper column, gets through hole by laser first and prepares the ceramic base for having Seed Layer
Piece is placed in the solid wall liquid of nano-carbon material preparation, drying is taken out after time of infusion under ultrasonication, in ceramic hole wall
Upper formation conducting film；Finally by graphic plating and etching process, surface is prepared containing metallic circuit, inside is containing conduction copper column
Ceramic substrate,
The solid wall liquid is made up of nano-carbon material, deionized water and surfactant, wherein the mass content of nano-carbon material
For 1.0-5.0%, the volume ratio content of surfactant is 0.1-1.0%, and the solid wall liquid pH value is 9.5-10.5, passes through hydrogen
Sodium oxide molybdena or ammoniacal liquor are adjusted.
7. a kind of ceramic substrate preparation method containing conduction copper column as claimed in claim 6, it is characterised in that the ceramic base
Sheet material is aluminum oxide, aluminium nitride, beryllium oxide or carborundum, and the through-hole diameter is 50-200 μm.
8. a kind of ceramic substrate preparation method containing conduction copper column as claimed in claim 7, it is characterised in that live on the surface
Property agent be neopelex, alkyl phosphorus carboxylate or calgon, the ultrasonic immersing time be 3-5 minute, baking
Dry temperature is 50-70 DEG C, and the seed layer thickness is 2.0-5.0 μm.
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| CN106129240B (en) * | 2016-08-05 | 2019-04-16 | 江苏新宝玛光电制造有限公司 | High-power LED chip and its COB packaging method based on graphene material |
| TWI618821B (en) * | 2017-04-21 | 2018-03-21 | 萬億股份有限公司 | Method for manufacturing traces of pcb |
| CN108323003A (en) * | 2018-01-24 | 2018-07-24 | 深圳市牧泰莱电路技术有限公司 | A kind of ceramic circuit-board and its manufacturing method with plated-through hole |
| CN108774052B (en) * | 2018-06-11 | 2020-11-20 | 三峡大学 | Graphene-containing graphite/ceramic conductive composite material and preparation method thereof |
| CN108950496A (en) * | 2018-08-22 | 2018-12-07 | 广州鸿葳科技股份有限公司 | A kind of surface treatment method and its application based on the 5G communication technology with ceramic resonance body |
| CN113161738B (en) * | 2021-05-25 | 2021-08-31 | 中国电子科技集团公司第二十九研究所 | Preparation method of low-frequency broadband curved surface circuit |
| CN114434894A (en) * | 2022-02-21 | 2022-05-06 | 江西柔顺科技有限公司 | Copper foil graphite film and preparation method thereof |
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