CN204834620U - Two carrier LED drive circuit packaging parts of heat sink structure - Google Patents
Two carrier LED drive circuit packaging parts of heat sink structure Download PDFInfo
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- CN204834620U CN204834620U CN201520567423.1U CN201520567423U CN204834620U CN 204834620 U CN204834620 U CN 204834620U CN 201520567423 U CN201520567423 U CN 201520567423U CN 204834620 U CN204834620 U CN 204834620U
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- dao
- power device
- drive circuit
- led drive
- heat sink
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a two carrier LED drive circuit packaging parts of heat sink structure, including pasting power device and the control chip on ji dao, control chip links to each other with power device and interior pin respectively, the power device passes through the bonding line and links to each other with interior pin, interior pin links to each other with outer pin, the last plastic envelope of ji dao has the adhesive body, ji dao is two discontiguous jidao each other, the power device bonds on a ji dao through electrically conductive glued membrane, the bottom surface that this ji dao deviates from the power device lies in outside the adhesive body, IC control chip bonds on another ji dao through insulating glued membrane. Coating insulating cement in the wafer back is cut into single crystalline grain, pastes on ji dao, and the power device glues on another jidao, present technology pressure welding, plastic envelope, solidification and measuring, outside bottom surface that first ji dao does not paste the device lies in the adhesive body, two carrier LED drive circuit packaging parts of heat sink structure. This packaging part is a large amount of heats of dissipation fast, and the insulating cement is difficult to punctured, and insulating cement and conducting resin can not the interpenetrations.
Description
Technical field
The utility model belongs to electronic device and manufactures technical field of semiconductor encapsulation, relates to a kind of LED drive circuit packaging part, is specifically related to a kind of heat sink structure complex carries LED drive circuit packaging part.
Background technology
Light-emitting diode (Light-EmittingDiode, be called for short LED) be a kind of can be the semiconductor electronic component of luminous energy by electric energy conversion, be called as forth generation light source, there are energy-saving and environmental protection, safety, life-span length, low-power consumption, low-heat, high brightness, waterproof, miniature, shockproof, easy light modulation, light beam are concentrated, the feature such as easy maintenance, are widely used in the fields such as various instruction, display, decoration, backlight, general lighting.Due to the semiconductor device that LED is characteristic sensitivity, again there is negative temperature characteristic, thus need to carry out stablizing and protecting to its operating state, so create the concept of LED drive circuit in application process.LED is the low voltage drive of 2 ~ 3 volts, unlike common incandescent lamp bulb, directly can connect the electric main of 220V, and LED component near harshness, must design complicated translation circuit to the requirement of driving power.The LED of different purposes, be equipped with different power supply adaptors.Along with electronic product is to standard-required that is energy-efficient, green power supply, and high integration drives the demand of development, and market requires also very high to the encapsulation of LED drive circuit power supply.Adopt the MCP(multi-chip package of IC circuit and MOSEFT power device assembled package, MultiChipPackaging) become one of development trend of LED drive circuit encapsulation.
The LED drive circuit of built-in MOSFET element adopts single carrier lead framework encapsulating structure usually.When being applied under condition of high voltage, the amount of heat that the MOSFET power device in LED drive circuit gives out is difficult to effectively be shed by the conduction of lead frame.Meanwhile, due to the effect of HTHP, the insulating cement of IC chip bottom is easy to breakdown and leaks electricity; In addition, because lead frame is single carrier structure, the insulating cement of carrier surface and conducting resinl are easy to interpenetrate, and cause electric leakage.
Summary of the invention
The purpose of this utility model is to provide a kind of heat sink structure complex carries LED drive circuit packaging part, has good heat dispersion, effectively can solve the heat dissipation problem of MOSFET power device.
For achieving the above object, the technical scheme that the utility model adopts is: a kind of heat sink structure complex carries LED drive circuit packaging part, comprise and be pasted on MOSFET power device on Ji Dao and IC control chip, IC control chip is connected with interior pin with MOSFET power device respectively by bonding line, MOSFET power device is connected with interior pin by bonding line, interior pin is connected with outer pin, the upper plastic packaging of Ji Dao has adhesive body, lead frame in this packaging part adopts double-basis island structure, Liang Geji island in this double-basis island is mutually non-touching first Ji Dao and the second Ji Dao, MOSFET power device is adhered on the first Ji Dao by conductive adhesive film, IC control chip is adhered on the second Ji Dao by insulated rubber film, the bottom surface that first Ji Dao deviates from MOSFET power device is positioned at outside adhesive body.
The thermal conductivity of plastic packaging material is about 1.0W/m DEG C, and the thermal conductivity of copper is 397W/m DEG C.In the utility model packaging part, the second base island lower surface of copper alloy lead wire frame is exposed to plastic-sealed body and directly contacts with air outward, can make the quick dissipation of the amount of heat sent of MOSFET power device, and rate of heat dissipation can be made to improve more than 50%.Meanwhile, lead frame adopts double-basis island structure, and the insulating cement solving IC chip bottom is easily breakdown and electric leakage and single carrier lead frame carrier surface insulating cement and the easy interpenetrative problem of conducting resinl occur.WBC technique and WBC combine with some glue the use of technology, add insulating cement thickness, further enhancing the high pressure resistant anti-leak source ability of IC control chip.The IC+MOSFET integrated drive electronics encapsulating products of existing single base island frame structure, be applicable to the encapsulation of below input voltage 150V, adopt the packaging technology that double-basis island frame structure, WBC technique and WBC combine with some glue, input voltage is the highest meets 800V.
Accompanying drawing explanation
Fig. 1 is existing single carrier lead framework LED drive circuit encapsulation profile.
Fig. 2 is the profile of the first embodiment of the utility model packaging part.
Fig. 3 is the profile of the utility model packaging part the second embodiment.
In figure: 1. carrier, 2.IC control chip, 3.MOSFET power device, 4. adhesive body, 5. conductive adhesive film, 6. insulated rubber film, pin 7., 8. outer pin, 9. the first Ji Dao, 10. the second Ji Dao, 11. insulation paste layers.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail.
For the LED drive circuit of built-in MOSFET element, usually single carrier package is as shown in Figure 1 adopted in prior art, this packaging part comprises carrier 1, carrier 1 is pasted with side by side IC control chip 2 and MOSFET power device 3, IC control chip 2 is adhered on carrier 1 by insulated rubber film 6, MOSFET power device 3 is adhered on carrier 1 by conductive adhesive film 5, IC control chip 2 is connected with interior pin 7 with MOSFET power device 3 respectively by bonding line, MOSFET power device 3 is connected with interior pin 7 by bonding line, interior pin 7 is connected with outer pin 8, carrier 1, IC control chip 2, MOSFET power device 3, all interior pins 7 and all bonding lines are all packaged in adhesive body 4.This encapsulating structure, for application LED drive circuit under elevated pressure conditions, the amount of heat that MOSFET power device 3 gives out is difficult to effectively be shed by the conduction of lead frame.Meanwhile, due to the effect of HTHP, the insulated rubber film 6 bottom IC control chip 2 is easy to breakdown and leaks electricity; In addition, because lead frame is single carrier structure, insulating cement and the conducting resinl on carrier 1 surface are easy to interpenetrate, thus cause electric leakage.In order to overcome problems of the prior art, the utility model provides a kind of structure the first embodiment of heat sink structure complex carries LED drive circuit packaging part as shown in Figure 2, the amount of heat that MOSFET power device 3 gives out effectively can be shed by lead frame, and can prevent insulating cement and conducting resinl from interpenetrating, stop electric leakage.Lead frame in this complex carries LED drive circuit packaging part adopts double-basis island structure, and this Liang Geji island is the height and position of height and position lower than the second base island 10 on the first base island 9 and the second base island 9, base island 10, first do not contacted with each other; First base island 9 is bonded with MOSFET power device 3 by conductive adhesive film 5, second base island 10 is bonded with IC control chip 2 by insulated rubber film 6, the thickness of insulated rubber film 6 is 20 ~ 100 μm, IC control chip 2 is connected with interior pin 7 with MOSFET power device 3 respectively by bonding line, MOSFET power device 3 is connected with interior pin 7 by bonding line, and interior pin 7 is connected with outer pin 8; On first base island 9 and the second base island 10, plastic packaging has adhesive body 4, IC control chip 2, MOSFET power device 3, second base island 10, insulated rubber film 6, conductive adhesive film 5, first base island 9 are pasted with the surface of MOSFET power device 3, all interior pins 7 and all bonding lines and are all packaged in adhesive body 4, and the first base island 9 does not have the bottom surface of bonding MOSFET power device 3 to be positioned at outside adhesive body 4.
The first embodiment packaging part of the utility model, the first base island 9 do not have the bottom surface of adhering chip to be exposed to adhesive body 4 is outer directly contacts with air, quick dissipation MOSFET power device 3 evolution of heat of energy; Efficiently solve the problem that sheds of the amount of heat that MOSFET power device 3 produces, solve insulated rubber film 6 bottom IC control chip 2 easily breakdown and the problem of electric leakage occurs simultaneously, make packaging part high pressure resistant, anticreep, and solve lead frame carrier surface insulation glue and the easy interpenetrative problem of conducting resinl.
For strengthening the high pressure resistant anti-leak source ability of IC control chip 2 further, adopt wafer rear coating (WBC, i.e. WaferBackCoating) with the mode that combines of some glue to the thickness of control IC control chip 2 bottom insulation glue-line, form the second embodiment of the utility model packaging part as shown in Figure 3, the structure of this second embodiment is substantially identical with the structure of the first embodiment shown in Fig. 1, difference between two kinds is: in the second embodiment, is provided with the insulation paste layer 11 that thickness is 5 ~ 35 μm between the second base island 10 and insulated rubber film 6.Thickness of insulating layer between IC control chip 2 and the second base island 10 is increased, strengthens the high pressure resistant anti-leak source ability of IC control chip 2.
The utility model packaging part obtains by the following method:
Step 1: adopt wafer rear coating processes (WBC) that insulating cement is coated on wafer rear, namely adopts the techniques such as silk screen printing insulating cement to be coated on wafer rear, forms the insulated rubber film 6 that thickness is 20 ~ 100 μm; Then wafer is cut into single crystal grain, obtain IC control chip 2, then IC control chip 2 is pasted on the upper surface on the second base island 10;
Or, adopt wafer rear coating processes (WBC) that insulating cement is coated on wafer rear, namely adopt the techniques such as silk screen printing insulating cement to be coated on wafer rear; Form the insulated rubber film 6 that thickness is 20 ~ 100 μm; Then wafer is cut into single crystal grain, obtain IC control chip 2; Then the technique that WBC combines with some glue is adopted, specifically refer to that first adopting gluing process to be dripped by insulation paste is coated in the second base island 10 upper surface, after insulation paste solidification, forming thickness is the insulation paste layer of 5 ~ 35 μm, then the IC control chip 2 of insulation glue-line 6 is pasted on the upper surface on the second base island 10 by backside coating;
Step 2: upper surface MOSFET power device 3 being pasted on the first base island 9;
Step 3: adopt the production technology of the LED drive circuit of existing built-in MOSFET element to carry out pressure welding, plastic packaging, solidification and detection; In plastic packaging process, the bottom surface making the first base island 9 not paste device is positioned at outside adhesive body 4, obtained heat sink structure complex carries LED drive circuit packaging part.
Claims (5)
1. a heat sink structure complex carries LED drive circuit packaging part, comprise and be pasted on MOSFET power device (3) on Ji Dao and IC control chip (2), IC control chip (2) is connected with interior pin (7) with MOSFET power device (3) respectively by bonding line, MOSFET power device (3) is connected with interior pin (7) by bonding line, interior pin (7) is connected with outer pin (8), the upper plastic packaging of Ji Dao has adhesive body (4), it is characterized in that, lead frame in this packaging part adopts double-basis island structure, Liang Geji island in this double-basis island is mutually non-touching first Ji Dao (9) and the second Ji Dao (10), MOSFET power device (3) is adhered on the first Ji Dao (9) by conductive adhesive film (5), IC control chip (2) is adhered on the second Ji Dao (10) by insulated rubber film (6), the bottom surface that first Ji Dao (9) deviates from MOSFET power device (3) is positioned at adhesive body (4) outward.
2. heat sink structure complex carries LED drive circuit packaging part according to claim 1, is characterized in that, the height and position of described first Ji Dao (9) is lower than the height and position of the second Ji Dao (10).
3. heat sink structure complex carries LED drive circuit packaging part according to claim 1, is characterized in that, be provided with insulation paste layer (11) between insulated rubber film (6) and the second Ji Dao (10).
4. heat sink structure complex carries LED drive circuit packaging part according to claim 3, is characterized in that, the thickness of described insulation paste layer (11) is 5 ~ 35 μm.
5. the heat sink structure complex carries LED drive circuit packaging part according to claim 1 or 3, is characterized in that, the thickness of described insulated rubber film (6) is 20 ~ 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520567423.1U CN204834620U (en) | 2015-07-31 | 2015-07-31 | Two carrier LED drive circuit packaging parts of heat sink structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520567423.1U CN204834620U (en) | 2015-07-31 | 2015-07-31 | Two carrier LED drive circuit packaging parts of heat sink structure |
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| CN204834620U true CN204834620U (en) | 2015-12-02 |
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| CN201520567423.1U Active CN204834620U (en) | 2015-07-31 | 2015-07-31 | Two carrier LED drive circuit packaging parts of heat sink structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023922A (en) * | 2015-07-31 | 2015-11-04 | 天水华天科技股份有限公司 | Heat sink structure double-carrier LED drive circuit package and manufacturing method thereof |
| US11063495B2 (en) | 2019-07-01 | 2021-07-13 | Nidec Motor Corporation | Heatsink clamp for multiple electronic components |
-
2015
- 2015-07-31 CN CN201520567423.1U patent/CN204834620U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023922A (en) * | 2015-07-31 | 2015-11-04 | 天水华天科技股份有限公司 | Heat sink structure double-carrier LED drive circuit package and manufacturing method thereof |
| US11063495B2 (en) | 2019-07-01 | 2021-07-13 | Nidec Motor Corporation | Heatsink clamp for multiple electronic components |
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