CN202307889U - High-power LED (Light Emitting Diode) integrated package structure - Google Patents
High-power LED (Light Emitting Diode) integrated package structure Download PDFInfo
- Publication number
- CN202307889U CN202307889U CN 201120421380 CN201120421380U CN202307889U CN 202307889 U CN202307889 U CN 202307889U CN 201120421380 CN201120421380 CN 201120421380 CN 201120421380 U CN201120421380 U CN 201120421380U CN 202307889 U CN202307889 U CN 202307889U
- Authority
- CN
- China
- Prior art keywords
- layer
- power led
- integrated package
- chip
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Led Device Packages (AREA)
Abstract
The utility model discloses a high-power LED (Light Emitting Diode) integrated package structure, which comprises a layer of bracket copper base plate, and is characterized in that: the bracket copper base plate is covered by a silicon substrate layer; the silicon substrate layer is also covered by an insulating layer; the insulating layer is covered by a silver plating layer; the silver plating layer is provided with a circuit board and is provided with a plurality of chips; positive and negative electrodes of the chips are connected with the circuit board on the silver plating layer through metal wires and the chips are covered by silica gel layers; and the chips and air are isolated and sealed by the silica gel layers. The high-power LED integrated package structure is mainly applied to the LED package technology, so that the problem of arrangement of the chips during high-power LED integrated package is solved; and according to the high-power LED integrated package structure, the direct application of the metal wires for connecting the chips in series during the integrated package can be avoided, so that the service life and the stability of the high-power LED integrated package of an LED are improved.
Description
[technical field]
The utility model relates to a kind of great power LED integrated encapsulation structure.
[background technology]
The integrated encapsulation of original high-power LED chip; All be to adopt gold thread directly the both positive and negative polarity of two different chips to be linked together when chip is connected; Like this because gold thread binding machine pressure when cutting off gold thread is bigger; Act directly on the chip, can certain damage be arranged to chip, said defective value must improve.
[utility model content]
The purpose of the utility model is to the above-mentioned defective of telling; A kind of great power LED integrated encapsulation structure is provided; The utility model is mainly used in the LED encapsulation technology; The arrangement problems of chip when mainly solving the integrated encapsulation of great power LED, the utility model purpose are to avoid chip chip series connection when integrated encapsulation directly to use gold thread to connect, thereby reach useful life and the stability that improves the integrated encapsulation of LED great power LED.
The technical scheme of the utility model is following: a kind of great power LED integrated encapsulation structure; Comprise one deck support copper base, it is characterized in that, cover one deck layer-of-substrate silicon on the described support copper base; Cover a layer insulating on the described layer-of-substrate silicon again; Described coated insulating layer lid layer silver coating, described silver coating are provided with circuit board and are arranged with several chips, and described chip links together the both positive and negative polarity of chip and the circuit board on the silver coating through gold thread; Be coated with silica gel layer on the described chip, described silica gel layer seals described chip and air insulated.
Described support copper base is a pure Cu substrate, the electroplating surface silver lustre, and main effect is to be used for heat conduction, fixing silicon chip, also is the thematic structure spare of support;
Described silica gel layer adopts two component height, light transmittance, high temperature resistant, silica gel that cementability is good, fills up support after the mixing, and chip and air insulated are guaranteed that the useful life of chip and gold thread do not receive ectocine;
Described gold thread uses automatic wire bonding machine, and the both positive and negative polarity of chip and the circuit of product are welded together, and makes the circuit of chip and pcb board form path, makes chip light emitting thereby when adding voltage for the pcb board circuit, can pressure drop be passed to chip;
Described chip is the luminous component of product, adopts the bonding mode of elargol with the center of die bonding on the guide pillar surface;
Described silver coating adopts electroplating technology, on the insulating barrier of its silicon chip surface, plates silver lustre, and effect improves the effect of reflectivity and conduction;
Described insulating barrier adopts more advanced high heat conductive insulating layer at present, adopts the mode of pressing or coating that insulating barrier is fixed on the silicon chip;
Described silicon substrate is to adopt high purity silicon to have a conductive force as what material formed.
According to above-mentioned structure; The utility model is mainly used in the LED encapsulation technology; The arrangement problems of chip when having solved the integrated encapsulation of great power LED; The utility model can avoid chip chip series connection when integrated encapsulation directly to use gold thread to connect, thereby reaches useful life and the stability that improves the integrated encapsulation of LED great power LED.
[description of drawings]
Accompanying drawing 1 is the structural representation of the utility model;
Accompanying drawing 2 is the structural representation of the utility model vertical section after amplifying.
Support copper base in the drawings, 1; 2, silica gel layer; 4, gold thread; 5, chip; 6, silver coating; 7, insulating barrier; 8, substrate layer.
[embodiment]
Below in conjunction with accompanying drawing and execution mode the utility model is further described:
Like Fig. 1, shown in Figure 2, a kind of great power LED integrated encapsulation structure comprises one deck support copper base 1; It is characterized in that; Cover one deck layer-of-substrate silicon 8 on the described support copper base 1, cover a layer insulating 7 on the described layer-of-substrate silicon 8 again, cover one deck silver coating 6 on the described insulating barrier 7; Described silver coating 6 is provided with circuit board and is arranged with several chips 5; Described chip 5 links together the both positive and negative polarity of chip and the circuit board on the silver coating 6 through gold thread 4, is coated with silica gel layer 2 on the described chip 5, and described silica gel layer 2 seals described chip 5 with air insulated.
In a word; The described execution mode of the foregoing description is not represented all implementations of the utility model, and above embodiment is not the concrete qualification to the utility model; All and the similar structure of the utility model technical scheme all should belong to the protection range of the utility model.
Claims (1)
1. great power LED integrated encapsulation structure; Comprise one deck support copper base, it is characterized in that, cover one deck layer-of-substrate silicon on the described support copper base; Cover a layer insulating on the described layer-of-substrate silicon again; Described coated insulating layer lid layer silver coating, described silver coating are provided with circuit board and are arranged with several chips, and described chip links together the both positive and negative polarity of chip and the circuit board on the silver coating through gold thread; Be coated with silica gel layer on the described chip, described silica gel layer seals described chip and air insulated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120421380 CN202307889U (en) | 2011-10-25 | 2011-10-25 | High-power LED (Light Emitting Diode) integrated package structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120421380 CN202307889U (en) | 2011-10-25 | 2011-10-25 | High-power LED (Light Emitting Diode) integrated package structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202307889U true CN202307889U (en) | 2012-07-04 |
Family
ID=46376729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120421380 Expired - Lifetime CN202307889U (en) | 2011-10-25 | 2011-10-25 | High-power LED (Light Emitting Diode) integrated package structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202307889U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103118487A (en) * | 2013-01-28 | 2013-05-22 | 苏州热驰光电科技有限公司 | Metal-based circuit board with ultrahigh heat-conducting property and preparation method thereof |
| CN108598072A (en) * | 2018-07-02 | 2018-09-28 | 江西科技师范大学 | A kind of UV-LED light source module preparation methods based on integrated bracket |
-
2011
- 2011-10-25 CN CN 201120421380 patent/CN202307889U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103118487A (en) * | 2013-01-28 | 2013-05-22 | 苏州热驰光电科技有限公司 | Metal-based circuit board with ultrahigh heat-conducting property and preparation method thereof |
| CN103118487B (en) * | 2013-01-28 | 2016-02-17 | 苏州热驰光电科技有限公司 | Super-high heat-conductive metal base circuit board and preparation method thereof |
| CN108598072A (en) * | 2018-07-02 | 2018-09-28 | 江西科技师范大学 | A kind of UV-LED light source module preparation methods based on integrated bracket |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120704 |
|
| CX01 | Expiry of patent term |