WO2008138182A1 - Chip type light-emitting diode - Google Patents

Chip type light-emitting diode Download PDF

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Publication number
WO2008138182A1
WO2008138182A1 PCT/CN2007/002948 CN2007002948W WO2008138182A1 WO 2008138182 A1 WO2008138182 A1 WO 2008138182A1 CN 2007002948 W CN2007002948 W CN 2007002948W WO 2008138182 A1 WO2008138182 A1 WO 2008138182A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal substrate
emitting diode
type light
chip type
light emitting
Prior art date
Application number
PCT/CN2007/002948
Other languages
French (fr)
Chinese (zh)
Inventor
Binhai Yu
Junzheng Li
Xunli Xia
Libing Pan
Xufeng Li
Original Assignee
Foshan Nationstar Optoelectronics Limited Liability Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foshan Nationstar Optoelectronics Limited Liability Company filed Critical Foshan Nationstar Optoelectronics Limited Liability Company
Publication of WO2008138182A1 publication Critical patent/WO2008138182A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the present invention relates to the field of light emitting diodes, and more particularly to a chip type light emitting diode.
  • the invention name is a chip light-emitting diode and a manufacturing method thereof, including the installation on the main printed circuit board.
  • the base is mounted to the back side of the main printed circuit board, the light emitting portion is arranged so as to coincide with the light guiding direction of the liquid crystal backlight disposed on the main printed circuit board.
  • a plurality of chip type light-emitting diodes are formed on a single integrated circuit substrate through a plurality of processes, and the integrated circuit board is divided in a final process to form a single chip type light-emitting diode.
  • the current method for improving the brightness can only change the LED die and increase the input current of the LED, which increases the production cost, and the heat dissipation problem of the LED does not have an effective solution, and the problem cannot be solved fundamentally.
  • An object of the present invention is to provide a chip type light emitting diode which is excellent in heat radiation effect, high in light extraction efficiency, stable in photoelectric characteristics, large in carrying current, and low in production cost, in order to solve the deficiencies of the prior art.
  • a chip type light emitting diode comprising a device holder, a die, a bonding wire, and an encapsulant
  • the device holder is made of a metal substrate material
  • the metal substrate is divided into Two electrodes are formed for the two parts insulated from each other, the die is placed on the metal substrate, the bonding wires are respectively connected to the die electrode and the other electrode of the metal substrate, and the encapsulant encapsulates the electrode lead of the die, the bonding wire and the metal substrate Together, the two parts of the metal substrate are insulated from each other.
  • the die is placed on a metal substrate by an adhesive, and the metal substrate is a copper substrate.
  • the adhesive is a conductive paste, an insulating paste or an auxiliary solder material.
  • One or more dies are disposed in the same encapsulant on the metal substrate.
  • the surface of the metal substrate is provided with a metal plating layer having reflective properties.
  • the metal plating layer is silver, palladium or gold.
  • the upper surface of the package of the encapsulant is a planar type, a concave lens type or a convex lens type.
  • the encapsulant is a colorless transparent, scattering glue or fluorescent glue.
  • One or more of the die, the bonding wire and the metal substrate in the same encapsulant form a unit, and the metal substrate of the plurality of cells is an integral structure to form an array of metal substrate assembly units of M rows and N columns, wherein M 1, ⁇ Lo
  • the invention adopts a metal substrate material instead of a conventional main printed circuit board as a main device bracket, effectively solves the problem of heat aging attenuation, overcomes the conventional viewpoint of using a printed circuit board, and at the same time, uses a silver with a high reflection coefficient as a surface of the metal substrate.
  • the plating layer effectively improves the light extraction efficiency of the device.
  • the present invention places a plurality of dies on corresponding positions on the metal substrate, and after the wire bonding is completed, the dies are encapsulated by the encapsulant, and finally the entire metal substrate is separated into independent junctions.
  • the chip light-emitting diode with the structure and the electric characteristics further improves the brightness of the product, improves the heat dissipation capability of the device itself, saves the production cost, and can be applied to various slices on the basis of maintaining the excellent characteristics of the conventional chip type light-emitting diode.
  • the manufacture of light-emitting diode products has a wide range of applications.
  • Figure 1 is a top plan view of the present invention
  • Figure 2 is a cross-sectional view of the present invention
  • Figure 3 is a structural view of the final separation of the present invention.
  • Figure 4 is a structural view of the final separation in the practice of the present invention.
  • the chip type light emitting diode frame of the present invention comprises a die 1, an adhesive, a bonding wire 2, an encapsulant 3, and a metal substrate 4 is used as a device holder.
  • a copper substrate and a metal are used.
  • the substrate 4 is fabricated into an LED bracket having electrical connection by etching or die-cutting.
  • the metal substrate is divided into two parts which are insulated from each other to form two electrodes, and the die is placed in the cavity of the metal substrate, and the bonding wires 2 are respectively connected to the tube.
  • the core electrode and another part of the metal substrate, the encapsulant encapsulates the die 1, the bonding leads 2, the electrode pins 5 of the metal substrate, and connects the two portions of the metal substrate.
  • the adhesive is a conductive paste, an insulating paste or an auxiliary solder material.
  • the upper surface of the package of the encapsulant 3 is a flat type, a concave lens plough or a convex lens type. In this embodiment, the upper surface of the encapsulant 1 has a planar shape, and the number of dies in the same encapsulant on the metal substrate 4 is 1 to N, wherein N 1.
  • One or more dies, bond wires and metal substrates in the same encapsulant form a unit, and the metal substrates of the plurality of units form a monolithic structure to form a matrix of metal substrate assembly units of M rows and N columns, wherein M 1, N ⁇ lo
  • the surface of the metal substrate is plated with silver, palladium or gold.
  • the encapsulant is colorless, transparent, scattering or fluorescent.
  • the metal substrate is first processed by chemical etching to facilitate the placement of the die, and the device has independent structure and complete electrical characteristics after molding.
  • the main process route is as follows: Material preparation, plate making, substrate coating, sensitizing oil, exposure After etching and cleaning, the LED chip is placed on the designated position of the metal substrate, and the die electrode is connected to the electrode lead by the gold wire; then, the semi-finished product of the wire bonding is packaged, and the resin is solidified; finally, The chip type LED metal substrate combination is separated into a single device, and the photoelectric parameter test of the product is carried out, and the product is divided into different grades, and the inspection qualified product is packaged and stored.
  • the chip type light emitting diode of the invention has higher brightness and stable photoelectric characteristics than the conventional chip type light emitting diode, and the main characteristic parameter test data is compared as follows:

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

A chip type light-emitting diode comprises a frame, a die (1), a binder, a bonding wire (2), and sealant (3). The chip type light-emitting diode uses a metal substrate (4) as the frame. The metal substrate (4) is divided into two electrodes insulated each other. Binder mounts the die on one electrode of the metal substrate. Another electrode (5) of the metal substrate is connected to a electrode of the die (1) by the bonding wire (2). The sealant (3) encapsulates the die (1), the bonding wire (2), and the metal substrate (4).

Description

一种片式发光二极管  Chip type light emitting diode
技术领域 Technical field
本发明涉及发光二极管领域， 更具体地说是涉及一种片式发光二极 管。  The present invention relates to the field of light emitting diodes, and more particularly to a chip type light emitting diode.
背景技术 Background technique
随着 LED生产技术的不断提高， LED应用范围不断扩大， 使得 LED 的亮度及光电稳定特性要求不断提升。目前片式发光二极管生产技术已经 相当成熟， 如中国专利申请号为 01131330.7， 申请日为 2002年 04月 10 日，发明名称为片式发光二极管及其制造方法，包括具备安装在主印刷电 路板的一个面一侧的底座，从上述底座延伸并且贯通设置在主印刷电路板 上的孔而配置的本体部分，设置在该本体部分上而且在主印刷电路板的另 一个面一侧发光的发光部分，在底座上设置与发光部分电连接的一对外部 连接用电极， 发光部分用树脂密封块密封。在把底座安装到主印刷电路板 的背面一侧时，配置发光部分使得与配置在主印刷电路板上的液晶背照光 的导光方向一致。片式发光二极管的制造方法是在一片集合电路基板上经 过多个工序形成多个片式发光二极管，在最终的工序中分割集合电路基板 使得制作一个个片式发光二极管。  With the continuous improvement of LED production technology, the range of LED applications continues to expand, making LED brightness and photoelectric stability characteristics increasingly demanding. At present, the production technology of chip light-emitting diodes is quite mature, such as the Chinese patent application number is 01131330.7, and the application date is April 10, 2002. The invention name is a chip light-emitting diode and a manufacturing method thereof, including the installation on the main printed circuit board. a base side of one side, a body portion extending from the base and penetrating through a hole provided in the main printed circuit board, and a light emitting portion disposed on the body portion and emitting light on the other side of the main printed circuit board A pair of external connection electrodes electrically connected to the light-emitting portion are provided on the base, and the light-emitting portion is sealed with a resin sealing block. When the base is mounted to the back side of the main printed circuit board, the light emitting portion is arranged so as to coincide with the light guiding direction of the liquid crystal backlight disposed on the main printed circuit board. In the method of manufacturing a chip type light-emitting diode, a plurality of chip type light-emitting diodes are formed on a single integrated circuit substrate through a plurality of processes, and the integrated circuit board is divided in a final process to form a single chip type light-emitting diode.
当前提高亮度所采用的方法只能是改变发光二极管管芯和加大发光 二极管输入电流，增加了生产成本，而发光二极管的散热问题无有效解决 途径， 并不能从根本上解决问题。  The current method for improving the brightness can only change the LED die and increase the input current of the LED, which increases the production cost, and the heat dissipation problem of the LED does not have an effective solution, and the problem cannot be solved fundamentally.
发明内容 Summary of the invention
本发明的目的就是为了解决现有技术之不足而提供的一种不仅散热 效果好、 出光效率高、光电特性稳定、可承载电流大， 而且生产成本低的 片式发光二极管。  SUMMARY OF THE INVENTION An object of the present invention is to provide a chip type light emitting diode which is excellent in heat radiation effect, high in light extraction efficiency, stable in photoelectric characteristics, large in carrying current, and low in production cost, in order to solve the deficiencies of the prior art.
1 1
确认本 本发明是采用如下技术解决方案来实现上述目的：一种片式发光二极 管， 包括器件支架、 管芯、键合线、 封装胶体， 其特征在于， 所述器件支 架采用金属基板材料，金属基板分为相互绝缘的两部分形成两电极，管芯 安放于金属基板上，键合线分别连接管芯电极与金属基板另一电极，封装 胶体将管芯、键合线、金属基板的电极引脚封装起来， 并将金属基板相互 绝缘的两部分连接在一起。 Confirmation The present invention achieves the above object by using the following technical solutions: a chip type light emitting diode comprising a device holder, a die, a bonding wire, and an encapsulant, wherein the device holder is made of a metal substrate material, and the metal substrate is divided into Two electrodes are formed for the two parts insulated from each other, the die is placed on the metal substrate, the bonding wires are respectively connected to the die electrode and the other electrode of the metal substrate, and the encapsulant encapsulates the electrode lead of the die, the bonding wire and the metal substrate Together, the two parts of the metal substrate are insulated from each other.
作为上述方案的进一步说明，所述管芯通过粘合剂安放于金属基板上, 金属基板采用铜基板。  As further illustrated in the above scheme, the die is placed on a metal substrate by an adhesive, and the metal substrate is a copper substrate.
所述粘合剂为导电胶、 绝缘胶或辅助焊接材料。  The adhesive is a conductive paste, an insulating paste or an auxiliary solder material.
所述金属基板上同一封装胶体内设有一个或多个管芯。  One or more dies are disposed in the same encapsulant on the metal substrate.
所述金属基板表面设置有具有反射性能的金属镀层。  The surface of the metal substrate is provided with a metal plating layer having reflective properties.
所述金属镀层为银、 钯或金。  The metal plating layer is silver, palladium or gold.
所述封装胶体的封装上表面为平面型、 凹透镜型或凸透镜型。  The upper surface of the package of the encapsulant is a planar type, a concave lens type or a convex lens type.
所述封装胶体为无色透明、 散射胶或荧光胶。  The encapsulant is a colorless transparent, scattering glue or fluorescent glue.
所述同一封装胶体内的一个或多个管芯、键合线和金属基板构成一个 单元， 若干单元的金属基板为一个整体结构形成 M行 N列的金属基板组 合单元阵列， 其中 M 1， ^ l o  One or more of the die, the bonding wire and the metal substrate in the same encapsulant form a unit, and the metal substrate of the plurality of cells is an integral structure to form an array of metal substrate assembly units of M rows and N columns, wherein M 1, ^ Lo
本发明采用上述技术解决方案所能达到的有益效果是：  The beneficial effects that the present invention can achieve by using the above technical solutions are:
1、 本发明采用金属基板材料替代传统主印刷电路板作为主要器件支 架， 有效解决热老化衰减问题， 克服了传统的采用印刷电路基板的观点； 同时， 由于金属基板表面采用高反射系数的银作为镀层，有效提高了器件 的出光效率。  1. The invention adopts a metal substrate material instead of a conventional main printed circuit board as a main device bracket, effectively solves the problem of heat aging attenuation, overcomes the conventional viewpoint of using a printed circuit board, and at the same time, uses a silver with a high reflection coefficient as a surface of the metal substrate. The plating layer effectively improves the light extraction efficiency of the device.
2、 本发明将若干个管芯安放于金属基板上相应的位置， 引线键合完 成后用封装胶体将管芯封装起来，最后将整个金属基板分离为具有独立结 构和电 ^特性的片式发光二极管，在保持传统片式发光二极管优良特性的 基础上， 进一步提高了产品发光亮度、提高器件本身的散热能力、节约生 产成本， 并可应用于各种片式发光二极管产品的生产制造， 适用范围广。 附图说明 2. The present invention places a plurality of dies on corresponding positions on the metal substrate, and after the wire bonding is completed, the dies are encapsulated by the encapsulant, and finally the entire metal substrate is separated into independent junctions. The chip light-emitting diode with the structure and the electric characteristics further improves the brightness of the product, improves the heat dissipation capability of the device itself, saves the production cost, and can be applied to various slices on the basis of maintaining the excellent characteristics of the conventional chip type light-emitting diode. The manufacture of light-emitting diode products has a wide range of applications. DRAWINGS
图 1是本发明俯视结构图；  Figure 1 is a top plan view of the present invention;
图 2是本发明剖视图；  Figure 2 is a cross-sectional view of the present invention;
图 3是本发明最终分离后的结构图； 、  Figure 3 is a structural view of the final separation of the present invention;
图 4是本发明实施中最终分离后的结构图。  Figure 4 is a structural view of the final separation in the practice of the present invention.
附图标记说明： 1、 管芯 2、 键合引线 3、 封装胶体 4、 金属基板 5、 电极引脚  DESCRIPTION OF REFERENCE NUMERALS: 1. Die 2, bonding wire 3, encapsulant 4, metal substrate 5, electrode lead
具体实施方式 detailed description
如图 1〜4所示， 本发明的片式发光二极管架包括管芯 1、 粘合剂、 键 合引线 2、 封装胶体 3， 采用金属基板 4作为器件支架， 本实施例采用铜 基板，金属基板 4通过蚀刻或冲切成型工艺制作成为具有电气连接的发光 二极管支架，金属基板分为相互绝缘的两部分形成两电极， 管芯安放于金 属基板的腔体内， 键合引线 2分别连接管芯电极与金属基板另一部分电 极， 封装胶体将管芯 1、 键合引线 2、 金属基板的电极引脚 5封装起来， 并将金属基板间隔的两部分连接在一起。粘合剂为导电胶、绝缘胶或辅助 焊接材料。封装胶体 3的封装上表面为平面型、 凹透镜犁或凸透镜型， 本 实施例中，封装胶体 1上表面形状为平面，金属基板 4上同一封装胶体内 的管芯数目为 1〜N个， 其中 N 1。 同一封装胶体内的一个或多个管芯、 键合线和金属基板构成一个单元，若干单元的金属基板为一个整体结构形 成 M行 N列的金属基板组合单元阵列， 其中 M 1， N^l o 金属基板表 面镀层为银、 钯或金。 封装胶体为无色透明、 散射胶或荧光胶。 制造过程中， 先将金属基板通过化学蚀刻方式加工成型， 方便管芯安 放， 保证器件成型后具备独立结构和完整电气特性， 主要工艺路线如下： 材料准备一制版—基板涂布感光油一曝光一腐蚀一清洗 然后，将发光二极管芯片安放于金属基板指定位置， 并将管芯电极用金线 与电极引脚相连； 然后， 将引线键合完成的半制品进行封装， 树脂固化成 型； 最后， 将片式发光二极管金属基板组合分离为单个器件， 对产品进行 光电参数测试， 分为不同等级， 并对检验合格品进行包装入库。 As shown in FIG. 1 to FIG. 4, the chip type light emitting diode frame of the present invention comprises a die 1, an adhesive, a bonding wire 2, an encapsulant 3, and a metal substrate 4 is used as a device holder. In this embodiment, a copper substrate and a metal are used. The substrate 4 is fabricated into an LED bracket having electrical connection by etching or die-cutting. The metal substrate is divided into two parts which are insulated from each other to form two electrodes, and the die is placed in the cavity of the metal substrate, and the bonding wires 2 are respectively connected to the tube. The core electrode and another part of the metal substrate, the encapsulant encapsulates the die 1, the bonding leads 2, the electrode pins 5 of the metal substrate, and connects the two portions of the metal substrate. The adhesive is a conductive paste, an insulating paste or an auxiliary solder material. The upper surface of the package of the encapsulant 3 is a flat type, a concave lens plough or a convex lens type. In this embodiment, the upper surface of the encapsulant 1 has a planar shape, and the number of dies in the same encapsulant on the metal substrate 4 is 1 to N, wherein N 1. One or more dies, bond wires and metal substrates in the same encapsulant form a unit, and the metal substrates of the plurality of units form a monolithic structure to form a matrix of metal substrate assembly units of M rows and N columns, wherein M 1, N^lo The surface of the metal substrate is plated with silver, palladium or gold. The encapsulant is colorless, transparent, scattering or fluorescent. In the manufacturing process, the metal substrate is first processed by chemical etching to facilitate the placement of the die, and the device has independent structure and complete electrical characteristics after molding. The main process route is as follows: Material preparation, plate making, substrate coating, sensitizing oil, exposure After etching and cleaning, the LED chip is placed on the designated position of the metal substrate, and the die electrode is connected to the electrode lead by the gold wire; then, the semi-finished product of the wire bonding is packaged, and the resin is solidified; finally, The chip type LED metal substrate combination is separated into a single device, and the photoelectric parameter test of the product is carried out, and the product is divided into different grades, and the inspection qualified product is packaged and stored.
另外， 本发明片式发光二极管与传统片式发光二极管相比， 亮度高， 光电特性稳定， 主要特性参数测试数据对比如下：  In addition, the chip type light emitting diode of the invention has higher brightness and stable photoelectric characteristics than the conventional chip type light emitting diode, and the main characteristic parameter test data is compared as follows:
Figure imgf000006_0001
Figure imgf000006_0001
测试条件： Ta=25°C RH=65%  Test conditions: Ta=25°C RH=65%
如以上所述， 仅是本发明的优选实例而已， 并非用来限定本发明的范 围， 本领域技术人员还可做多种修改和变化， 在不脱离发明的精神下， 都 在本发明所要求保护范围。  As described above, the preferred embodiments of the present invention are not intended to limit the scope of the present invention, and various modifications and changes can be made by those skilled in the art without departing from the spirit of the invention. protected range.

Claims

权利要求 Rights request
' 1、 一种片式发光二极管， 包括器件支架、 管芯、 键合线、 封装胶体， 其特征在于，所述器件支架采用金属基板材料，金属基板分为相互绝缘的 两部分形成两电极， 管芯安放于金属基板上，键合线分别连接管芯电极与 金属基板另一电极， 封装胶体将管芯、键合线、金属基板的电极引脚封装 起来， 并将金属基板相互绝缘的两部分连接在一起。  A chip type light emitting diode comprising a device holder, a die, a bonding wire, and an encapsulant, wherein the device holder is made of a metal substrate material, and the metal substrate is divided into two parts which are insulated from each other to form two electrodes. The die is placed on the metal substrate, and the bonding wires are respectively connected to the die electrode and the other electrode of the metal substrate, and the encapsulant encapsulates the electrode pins of the die, the bonding wires and the metal substrate, and insulates the metal substrates from each other. Partially connected together.
2、 根据权利要求 1所述的一种片式发光二极管， 其特征在于， 所述 管芯通过粘合剂安放于金属基板上， 金属基板采用铜基板。  2. A chip type light emitting diode according to claim 1, wherein the die is placed on a metal substrate by an adhesive, and the metal substrate is a copper substrate.
3、 根据权利要求 2所述的一种片式发光二极管， 其特征在于， 所述 粘合剂为导电胶、 绝缘胶或辅助焊接材料。  3. A chip type light emitting diode according to claim 2, wherein the adhesive is a conductive paste, an insulating paste or an auxiliary solder material.
4、 根据权利要求 1或 2所述的一种片式发光二极管， 其特征在于， 所述金属基板上同一封装胶体内设有一个或多个管芯。  The chip type light emitting diode according to claim 1 or 2, wherein one or more dies are disposed in the same encapsulant on the metal substrate.
5、 根据权利要求 1或 2所述的一种片式发光二极管， 其特征在于， 所述金属基板表面设置有具有反射性能的金属镀层。  The chip type light emitting diode according to claim 1 or 2, wherein the metal substrate surface is provided with a metal plating layer having reflective properties.
6、 根据权利要求 5所述的一种片式发光二极管， 其特征在于， 所述 金属镀层为银、 钯或金。  6. A chip type light emitting diode according to claim 5, wherein the metal plating layer is silver, palladium or gold.
7、 根据权利要求 1所述的一种片式发光二极管， 其特征在于， 所述 封装胶体的封装上表面为平面型、 凹透镜型或凸透镜型。  7. A chip type light emitting diode according to claim 1, wherein the package upper surface of the encapsulant is a planar type, a concave lens type or a convex lens type.
8、 根据权利要求 1所述的一种片式发光二极管， 其特征在于， 所述 封装胶体为无色透明、 散射胶或荧光胶 p  8. A chip type light emitting diode according to claim 1, wherein the encapsulant is colorless transparent, scattering glue or fluorescent glue p
9、 根据权利要求 4所述的一种片式发光二极管， 其特征在于， 同一 封装胶体内的一个或多个管芯、键合线和金属基板构成一个单元，若干单 元的金属基板为一个整体结构形成 M行 N列的金属基板组合单元阵列， 其中 M 1， N^ l o  9. A chip type light emitting diode according to claim 4, wherein one or more of the die, the bonding wire and the metal substrate in the same encapsulant form a unit, and the metal substrate of the plurality of units is a whole The structure forms an array of metal substrate assembly units of M rows and N columns, wherein M 1, N^ lo
PCT/CN2007/002948 2007-05-15 2007-10-15 Chip type light-emitting diode WO2008138182A1 (en)

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