CN108598072A - A kind of UV-LED light source module preparation methods based on integrated bracket - Google Patents
A kind of UV-LED light source module preparation methods based on integrated bracket Download PDFInfo
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- CN108598072A CN108598072A CN201810710216.5A CN201810710216A CN108598072A CN 108598072 A CN108598072 A CN 108598072A CN 201810710216 A CN201810710216 A CN 201810710216A CN 108598072 A CN108598072 A CN 108598072A
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- plate
- light source
- integrated bracket
- metal box
- box dam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The UV LED light source module preparation methods based on integrated bracket that the invention discloses a kind of, include the following steps：Large scale silicon plate is prepared first, then integrated bracket is prepared, UV LED chips are fixedly mounted on by high heat-conductivity conducting glue on large scale silicon plate again, and the positive pole zone of the upper surface of large scale silicon plate and metal box dam is electrically connected by gold thread, the negative regions of the cathode of UV LED chips and metal box dam are electrically connected, finally glass cover-plate is covered on the metal box dam of both sides, completes the encapsulation of light source module.The present invention is by designing a kind of integrated bracket combined with high heat conductive insulating plate and metal box dam using large scale silicon plate, pass through die bond, electrical connection, realize the full-inorganic encapsulating structure of high-power UV LED light source modules, improve the reliability of device, improve optical power density, preparation process is simple, highly practical.
Description
Technical field
The present invention relates to UV-LED chip encapsulation technologies field more particularly to a kind of UV-LED light based on integrated bracket
Source module preparation method.
Background technology
Ultra-violet curing technology in many industries now in occupation of bigger proportion, make by UV LED (UV-LED)
For a kind of novel green light source, traditional UV sources are gradually replaced in commercial Application.However, curing technology is to ultraviolet source
It is required that being also increasingly stringenter, highly reliable, energy-efficient high power light source is not only needed, and also has certain want to power density
It asks, therefore, single chip can no longer meet the demand of practical cure applications, design a kind of highly reliable large power UV-LED light
Source module, it appears particularly important.
With the increase of UV-LED power densities, heat dissipation problem becomes the crucial barrier for restricting high-power UV-LED integrated products
One of hinder.Heat dissipation can seriously affect the photoelectric properties of LED not in time, and therefore, it is to need to solve in research LED encapsulation to improve heat dissipation
Matter of utmost importance.Moreover, existing UV-LED products have also continued the encapsulation technology of visible LED, envelope is simplified using filling gel
Dress technique, but UV-LED is in use for some time, since heat problem can make silica gel showing for yellow even blackening occur
As the light extraction of LED having been seriously affected, so that it, which cannot meet, normally applies needs.Therefore, avoid ultraviolet radioactive to organic material
Yellow problem caused by material is the trend of present ultraviolet LED encapsulation using full-inorganic encapsulation.
LED chip structure is mainly horizontal structure, vertical structure and inverted structure at present, relative to horizontal and upside-down mounting knot
The chip of structure, vertical structure has single side light extraction, and directive property is good, and the p-type of chip and N-type electrode are the two of LED epitaxial layers
Side so that uniform current density solves the problems, such as current crowding existing for homonymy electrode chip；Meanwhile thin-film LED has
There is good thermal diffusivity, therefore, be widely used in preparing high power LED device.It is used in existing LED encapsulation technologies
Printed circuit board make circuit frequently with copper foil, but copper foil sectional area is small, therefore limits current load ability, simultaneously
Also limit the power density of LED lamp.
Invention content
The purpose of the present invention is overcome the deficiencies of the prior art and provide a kind of UV-LED light source dies based on integrated bracket
Block preparation method, to realize above-mentioned light source module, design is a kind of to be enclosed using large scale silicon plate with high heat conductive insulating plate and metal
The integrated bracket that dam combines；By die bond, electrical connection, the full-inorganic encapsulation knot of high-power UV-LED light source modules is realized
Structure improves the reliability of device, improves optical power density, and preparation process is simple, highly practical.
To solve the above problems, technical scheme is as follows：A kind of UV-LED light source dies based on integrated bracket
Block preparation method, includes the following steps：
S1. first by the silicon polishing surface plate of a high resistant, upper photoresist is coated on silicon plate, using the side of exposure imaging
Formula so that the place that need not be deposited on silicon plate retains photoresist, and 3000 are deposited on the good silicon plate of photoetching by evaporated device
The metal gold, silver or platinum of angstrom left and right thickness after the completion of vapor deposition, using remaining photoresist on glue removal silicon plate is removed, finally lead to
It crosses cutting equipment and the silicon plate after the completion of above-mentioned steps is cut into required size, complete the preparation of large scale silicon plate；
S2. integrated bracket then is prepared, using high heat conductive insulating plate as support plate, high heat conductive insulating plate both sides are equipped with gold
Belong to the positive and negative anodes that box dam is connected respectively as circuit, large scale silicon is equipped between the metal box dam of both sides on high heat conductive insulating plate
Plate, metal box dam and large scale silicon plate are pressed with high heat conductive insulating plate by high heat-conductivity conducting gluing knot；
S3. UV-LED chips are fixedly mounted on by high heat-conductivity conducting glue on large scale silicon plate, and will be big by gold thread
The upper surface of size silicon plate and the positive pole zone of metal box dam are electrically connected, by the negative of the cathode of UV-LED chips and metal box dam
Polar region domain is electrically connected；
S4. finally glass cover-plate is covered on the metal box dam of both sides, completes the encapsulation of light source module.
Preferably, the high heat conductive insulating plate on the integrated bracket is that high heat conduction aluminum nitride ceramic substrate or aluminium oxide are made pottery
Porcelain substrate.
Preferably, the metal box dam material on the integrated bracket is copper or aluminium, and the inner surface of metal box dam can steam
Plate the preferable metallic silver of reflectance or platinum.
Preferably, the high heat-conductivity conducting glue is that height leads elargol or solder.
Preferably, the UV-LED chips use vertical structure.
Preferably, the glass cover-plate is made of silica glass material, can be passed through between glass cover-plate and metal box dam
Brazing metal is fixed or UV glue stickings, and the brazing metal is heating and curing by Reflow Soldering or warm table, and the UV glue can lead to
Cross ultraviolet lighting solidification.
Preferably, UV-LED chips linear array by the way of full parallel connection forms a module, and multiple modules pass through
Series connection and combination in parallel are combined into the module of bigger.
The technique effect and advantage of the present invention：
1, present invention design is a kind of using the integrated of large scale silicon plate and high heat conductive insulating plate and the combination of metal box dam
Holder realizes the integrated encapsulation structure of high-power UV-LED.
2, reflecting metal is deposited using the large scale silicon plate and metal box dam surface used in integrated bracket in the present invention,
Substantially increase the optical power density of UV-LED.
3, the positive and negative anodes that the present invention connects the metal box dam in integrated bracket directly as circuit, substantially increase electricity
Current load ability solves the current-carrying restricted problem of printed circuit board, unit area encapsulation power is improved, moreover, this structure
Without doing circuit design on the supporting plate, package fabrication process is simplified.
4, for the present invention by the way of block coupled in series and combination in parallel, several UV-LED chips linear arrays first form one
High-power package module, multiple modules reconstruct the module of bigger, by the combination side in parallel and serial for changing chip and module
Formula can neatly design the electric current and voltage of UV-LED, can not only realize high-power, high voltage UV-LED modules envelope
Dress, and also reduce the design requirement of driving power.
5, the present invention improves the anti-of UV-LED by accessing the large scale silicon plate parallel connection in integrated bracket in circuit
Electrostatic capacity, the combination of chip bottom large scale silicon plate and high heat conductive insulating plate, improves the heat dissipation performance of UV-LED, improves
The reliability of module adds the full-inorganic encapsulating structure of glass cover-plate using metal box dam, and it is unfavorable existing for organic gel to avoid
Factor further improves the reliability of UV-LED modules.
Description of the drawings
Fig. 1 is the side structure schematic view of integrated bracket in UV-LED light source modules preparation method embodiment of the present invention.
Fig. 2 is the side structure schematic view of UV-LED light source modules preparation method embodiment of the present invention.
Fig. 3 is the overlooking structure diagram of UV-LED light source modules preparation method embodiment of the present invention.
Fig. 4 is the overlooking structure diagram that UV-LED light source modules preparation method of the present invention realizes module.
In figure：1 integrated bracket, 2 high heat conductive insulating plates, 3 metal box dams, 4 large scale silicon plates, 5 high heat-conductivity conducting glue,
6UV-LED chips, 7 gold threads, 8 glass cover-plates.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1 please refers to Fig.1 and Fig. 2, a kind of UV-LED light source module preparation methods based on integrated bracket, packet
Include following steps：First by the silicon polishing surface plate of a high resistant, upper photoresist is coated on silicon plate, using the side of exposure imaging
Formula so that the place that need not be deposited on silicon plate retains photoresist, and 3000 are deposited on the good silicon plate of photoetching by evaporated device
The metal gold, silver or platinum of angstrom left and right thickness after the completion of vapor deposition, using remaining photoresist on glue removal silicon plate is removed, finally lead to
It crosses cutting equipment and the silicon plate after the completion of above-mentioned steps is cut into required size, complete the preparation of large scale silicon plate 4；
Then integrated bracket 1 is prepared, using high heat conductive insulating plate 2 as support plate, 2 both sides of high heat conductive insulating plate are equipped with gold
Belong to the positive and negative anodes that box dam 3 is connected respectively as circuit, big ruler is equipped between both sides metal box dam 3 on high heat conductive insulating plate 2
Very little silicon plate 4, metal box dam 3 and large scale silicon plate 4 are bonded by high heat-conductivity conducting glue 5 with high heat conductive insulating plate 2 and are pressed；
UV-LED chips 6 are fixedly mounted on by high heat-conductivity conducting glue 5 on large scale silicon plate 4 again, and will by gold thread 7
The upper surface of large scale silicon plate 4 is electrically connected with the positive pole zone of metal box dam 3, and the cathode of UV-LED chips 6 is enclosed with metal
The negative regions on dam 3 are electrically connected；
Finally glass cover-plate 8 is covered on both sides metal box dam 3, completes the encapsulation of light source module.
Embodiment 2, the high heat conductive insulating plate 2 on integrated bracket 1 are that high heat conduction aluminum nitride ceramic substrate or aluminium oxide are made pottery
Porcelain substrate.Remaining is the same as embodiment 1.
Embodiment 3,3 material of metal box dam on integrated bracket 1 is copper or aluminium, and the inner surface of metal box dam 3 can steam
The preferable metallic silver of reflectance or platinum are plated, the optical power density of UV-LED is substantially increased.Remaining is the same as embodiment 1.
Embodiment 4, high heat-conductivity conducting glue 5 are that height leads elargol or solder.Remaining is the same as embodiment 1.
Embodiment 5, UV-LED chips 6 use vertical structure so that single side light extraction directive property is good, uniform current density, together
When have good thermal diffusivity.Remaining is the same as embodiment 1.
Embodiment 6, glass cover-plate 8 are made of silica glass material；It can pass through between glass cover-plate 8 and metal box dam 3
Brazing metal is fixed or UV glue stickings, brazing metal are heating and curing by Reflow Soldering or warm table, and UV glue can pass through ultraviolet light
According to solidification.Remaining is the same as embodiment 1.
Embodiment 7 please participate in Fig. 3 and Fig. 4, and the linear array by the way of full parallel connection of UV-LED chips 6 forms a module,
Multiple modules are combined into the module of bigger by connecting with combination in parallel, can neatly design the electric current of UV-LED
And voltage, it can not only realize high-power, high voltage UV-LED module packagings, and the design for also reducing driving power is wanted
It asks.Remaining is the same as embodiment 1.
The design focal point of the present invention is：It designs a kind of using large scale silicon plate and high heat conductive insulating plate and metal box dam
In conjunction with integrated bracket, by die bond, electrical connection, realize high-power UV-LED light source modules full-inorganic encapsulation knot
Structure improves the reliability of device, improves optical power density, and preparation process is simple, highly practical.
Claims (7)
1. a kind of UV-LED light source module preparation methods based on integrated bracket, which is characterized in that include the following steps：
S1. first by the silicon polishing surface plate of a high resistant, upper photoresist is coated on silicon plate, by the way of exposure imaging,
So that the place that need not be deposited on silicon plate retains photoresist, 3000 Izods are deposited on the good silicon plate of photoetching by evaporated device
The metal gold, silver or platinum of right thickness, after the completion of vapor deposition, using removing remaining photoresist on glue removal silicon plate, finally by cutting
It cuts equipment and the silicon plate after the completion of above-mentioned steps is cut into required size, complete the preparation of large scale silicon plate (4)；
S2. integrated bracket (1) then is prepared, using high heat conductive insulating plate (2) as support plate, high heat conductive insulating plate (2) both sides
Equipped with the positive and negative anodes that metal box dam (3) is connected respectively as circuit, it is located at both sides metal box dam (3) on high heat conductive insulating plate (2)
Between be equipped with large scale silicon plate (4), metal box dam (3) and large scale silicon plate (4) pass through high heat conduction with high heat conductive insulating plate (2)
Conducting resinl (5) bonds pressing；
S3. UV-LED chips (6) are fixedly mounted on by high heat-conductivity conducting glue (5) on large scale silicon plate (4), and pass through gold thread
(7) positive pole zone of the upper surface of large scale silicon plate (4) and metal box dam (3) is electrically connected, by the negative of UV-LED chips (6)
Pole and the negative regions of metal box dam (3) are electrically connected；
S4. finally glass cover-plate (8) is covered on both sides metal box dam (3), completes the encapsulation of light source module.
2. a kind of UV-LED light source module preparation methods based on integrated bracket according to claim 1, feature exist
In：High heat conductive insulating plate (2) on the integrated bracket (1) is high heat conduction aluminum nitride ceramic substrate or alumina ceramic-base
Plate.
3. a kind of UV-LED light source module preparation methods based on integrated bracket according to claim 1, feature exist
In：Metal box dam (3) material on the integrated bracket (1) is copper or aluminium, and the inner surface of metal box dam (3) can be deposited instead
The preferable metallic silver of luminosity or platinum.
4. a kind of UV-LED light source module preparation methods based on integrated bracket according to claim 1, feature exist
In：The high heat-conductivity conducting glue (5) is that height leads elargol or solder.
5. a kind of UV-LED light source module preparation methods based on integrated bracket according to claim 1, feature exist
In：The UV-LED chips (6) use vertical structure.
6. a kind of UV-LED light source module preparation methods based on integrated bracket according to claim 1, feature exist
In：The glass cover-plate (8) is made of silica glass material；Metal can be passed through between glass cover-plate (8) and metal box dam (3)
Solder is fixed or UV glue stickings.
7. a kind of UV-LED light source module preparation methods based on integrated bracket according to claim 1, feature exist
In：The UV-LED chips (6) linear array by the way of full parallel connection forms a module, and multiple modules pass through series connection and parallel connection
Combination be combined into the module of bigger.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810710216.5A CN108598072A (en) | 2018-07-02 | 2018-07-02 | A kind of UV-LED light source module preparation methods based on integrated bracket |
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| CN201810710216.5A CN108598072A (en) | 2018-07-02 | 2018-07-02 | A kind of UV-LED light source module preparation methods based on integrated bracket |
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Cited By (7)
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| CN109713092A (en) * | 2018-12-29 | 2019-05-03 | 中山市奥利安光电科技有限公司 | The encapsulating structure of UV LED and the packaging method of UV LED |
| CN109860161A (en) * | 2018-11-06 | 2019-06-07 | 惠州市华星光电技术有限公司 | The preparation method and display device of display component, display component |
| CN111969096A (en) * | 2020-08-31 | 2020-11-20 | 福建天电光电有限公司 | Chip packaging structure |
| CN112967936A (en) * | 2021-02-09 | 2021-06-15 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN113054076A (en) * | 2021-03-10 | 2021-06-29 | 池州昀冢电子科技有限公司 | Glass circuit board and preparation method thereof, and packaging structure and preparation method thereof |
| CN113784539A (en) * | 2021-09-08 | 2021-12-10 | 深圳市鸿利泰光电科技有限公司 | PCB paster receiving head process structure |
| CN115547939A (en) * | 2022-12-02 | 2022-12-30 | 合肥圣达电子科技实业有限公司 | Small-size large-current power type ceramic integrated shell and preparation method thereof |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112967936A (en) * | 2021-02-09 | 2021-06-15 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN112967936B (en) * | 2021-02-09 | 2022-11-01 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN113054076A (en) * | 2021-03-10 | 2021-06-29 | 池州昀冢电子科技有限公司 | Glass circuit board and preparation method thereof, and packaging structure and preparation method thereof |
| CN113054076B (en) * | 2021-03-10 | 2022-09-02 | 池州昀冢电子科技有限公司 | Glass circuit board and preparation method thereof, and packaging structure and preparation method thereof |
| CN113784539A (en) * | 2021-09-08 | 2021-12-10 | 深圳市鸿利泰光电科技有限公司 | PCB paster receiving head process structure |
| CN115547939A (en) * | 2022-12-02 | 2022-12-30 | 合肥圣达电子科技实业有限公司 | Small-size large-current power type ceramic integrated shell and preparation method thereof |
| CN115547939B (en) * | 2022-12-02 | 2023-03-17 | 合肥圣达电子科技实业有限公司 | Small-volume large-current power type ceramic integrated shell and preparation method thereof |
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Application publication date: 20180928 |