CN112967936B - Packaging structure and preparation method thereof - Google Patents
Packaging structure and preparation method thereof Download PDFInfo
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- CN112967936B CN112967936B CN202110177876.3A CN202110177876A CN112967936B CN 112967936 B CN112967936 B CN 112967936B CN 202110177876 A CN202110177876 A CN 202110177876A CN 112967936 B CN112967936 B CN 112967936B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
Abstract
The application discloses a packaging structure and a preparation method thereof. The preparation method of the packaging structure comprises the following steps: providing a substrate, wherein the substrate is provided with a first surface and a second surface which are opposite; the first surface of base plate sets up the box dam, the box dam includes inlayer dam body and outer dam body, the inlayer dam body cover is established in the outer dam body, the inlayer dam body is the metal material. According to the packaging structure obtained by the method, the box dam is arranged to comprise the inner layer dam body and the outer layer dam body, the inner layer dam body is made of metal materials, the defects of the existing box dam can be overcome, and the stability of the whole packaging structure can be improved.
Description
Technical Field
The present disclosure relates to the field of packaging technologies, and in particular, to a package structure and a method for manufacturing the same.
Background
The sensor, the crystal oscillator, the resonator, the laser, the camera device, the LED module and other devices generally adopt a ceramic substrate packaging mode, a common packaging structure is that a dam is arranged on a ceramic substrate with a circuit layer, a cover plate is arranged on the dam, the cover plate, the dam and the ceramic substrate are surrounded to form a sealed cavity, devices such as various chips are placed in the sealed cavity, and the sealed cavity is filled with packaging glue, inert gas or directly vacuumized to realize the airtight packaging of the devices.
At present, the box dams are roughly divided into three types, namely 1 ceramic box dam, 2 metal box dam and 3 plastic box dam. The ceramic box dam is generally formed by sintering an LTCC (Low Temperature co-fired ceramic) technology, so that the resolution of the circuit of the ceramic box dam is not high, and the cost of the circuit formed by high-Temperature sintering is high. The first method is that the metal box dam is formed by punching a single metal or alloy, and then the metal box dam is bonded on a ceramic substrate, in the method, the metal box dam and the ceramic substrate are organically connected, and the air tightness is poor; the second mode is to weld the metal box dam on the ceramic substrate through the metal kovar ring, and the mode requires high welding process, so that the product yield is low and the cost is high; the third mode is to adopt an electroplating mode to manufacture the box dam on the ceramic substrate, and the width size of the box dam is limited and the process is complex. The plastic dam (including epoxy resin) has poor UV (ultraviolet) irradiation resistance, and the cover plate can not be welded.
Therefore, research and development of a packaging technology with high reliability and good cost performance are of great significance for semiconductor packaging.
Disclosure of Invention
The application aims to provide a packaging structure and a preparation method thereof, which can overcome the defects of the existing box dam.
The purpose of the application is realized by adopting the following technical scheme:
a method for manufacturing a package structure includes:
providing a substrate, wherein the substrate is provided with a first surface and a second surface which are opposite;
the first surface of base plate sets up the box dam, the box dam includes inlayer dam body and outer dam body, the inlayer dam body cover is established in the outer dam body, the inlayer dam body is the metal material.
Preferably, the method for disposing the inner dam on the first surface of the substrate includes: and adhering the inner-layer dam body to the first surface of the substrate, or manufacturing the inner-layer dam body on the first surface of the substrate in a vacuum coating mode firstly and then in an electroplating mode.
Preferably, the outer-layer dam body is made of metal.
Preferably, the method for arranging the outer dam on the first surface of the substrate comprises the following steps: and adhering the outer-layer dam body to the first surface of the substrate, or manufacturing the outer-layer dam body on the first surface of the substrate in a vacuum coating mode, or manufacturing the outer-layer dam body on the outer side surface of the inner-layer dam body in an electroplating mode, or manufacturing the outer-layer dam body on the first surface of the substrate in a vacuum coating mode firstly and then in an electroplating mode.
Preferably, the outer-layer dam body is made of plastic materials.
Preferably, the method for providing the outer dam on the first surface of the substrate comprises: and adhering the outer-layer dam body to the inner-layer dam body, or using the inner-layer dam body as a part of a mold for manufacturing the outer-layer dam body, and manufacturing the outer-layer dam body on the first surface of the substrate in an injection molding mode, or embedding the inner-layer dam body into the mold for manufacturing the outer-layer dam body, manufacturing the inner-layer dam body and the outer-layer dam body which are integrally connected in an injection molding mode, and arranging the inner-layer dam body and the outer-layer dam body which are integrally connected on the first surface of the substrate.
Preferably, the substrate is a ceramic substrate.
Preferably, the substrate has a via hole penetrating the first surface and the second surface;
the preparation method further comprises the following steps:
forming a conductor in the through hole of the substrate, arranging a first conductive layer on the first surface of the substrate, arranging a second conductive layer on the second surface of the substrate, and conducting the first conductive layer and the second conductive layer through the conductor;
providing an electronic element, arranging the electronic element on the first surface of the substrate and electrically connecting the electronic element with the first conductive layer;
and providing a cover body, and arranging the cover body on the inner layer dam body to encapsulate the electronic element.
Preferably, the method for disposing the cover body on the inner dam body comprises the following steps: and welding the cover body and the part on the top surface of the inner-layer dam body together.
A packaging structure is obtained according to the preparation method.
Compared with the prior art, the technical effects of the application at least comprise:
the dam of the packaging structure obtained by the preparation method comprises an inner-layer dam body and an outer-layer dam body, wherein the inner-layer dam body is made of metal materials. Compared with a ceramic dam, the inner-layer dam body made of the metal material can avoid a high-temperature sintering step during preparation. Compare the metal box dam, the box dam of this application adopts the theory of modular design, divide into inlayer dam body and outer dam body two parts with the box dam, can be according to the demand among the practical application, adopt the inlayer dam body and the outer dam body of the multiple size of the same or different technology preparation separately, the inlayer dam body can be through gluing agent adhesion on the medial surface and the base plate of outer dam body, can avoid passing through metal kovar ring welding step, make the preparation process of box dam more nimble, and intensity is the same or is equivalent with the metal box dam basically. Compare the plastic dam, when packaging structure need weld the lid on the dam, can be with the lid welding on the inlayer dam body, the gas tightness is better, and when packaging structure produced UV light, the inlayer dam body of metal material can effectively tolerate the UV and shine, and in addition, the inlayer dam body of metal material is higher than the intensity of plastic dam, can improve whole packaging structure's stability.
Drawings
The present application is further described below with reference to the drawings and examples.
Fig. 1 is a schematic cross-sectional view of a substrate according to an embodiment of the present application.
Fig. 2 is a schematic cross-sectional view of the substrate of fig. 1 after forming an electrical conductor, a first conductive layer, and a second conductive layer.
Fig. 3 is a schematic cross-sectional view of a package structure according to an embodiment of the present application.
Fig. 4 is a schematic flow chart of a method for manufacturing a package structure provided in embodiment 2 of the present application.
Fig. 5 is a schematic flow chart of another method for manufacturing a package structure provided in embodiment 2 of the present application.
In the figure: 10. a substrate; 11. an electrical conductor; 12. conducting holes; 13. a first conductive layer; 14. a second conductive layer; 20. a box dam; 21. an inner-layer dam body; 22. an outer layer dam body; 30. an electronic component; 40. a cover body.
Detailed Description
The present application is further described with reference to the accompanying drawings and the detailed description, and it should be noted that, in the present application, the embodiments or technical features described below may be arbitrarily combined to form a new embodiment without conflict.
The words used in this application to describe positions and orientations, such as "upper", "lower", "inner" and "outer", are used for illustration, but may be modified as required and are intended to be encompassed by the present application. The drawings in the present application are only for illustrating the relative positional relationship, and the layer thicknesses in some portions are exaggerated in the drawing for easy understanding, and the layer thicknesses in the drawings do not represent the proportional relationship of the actual layer thicknesses.
Example 1
Referring to fig. 1 to 3, embodiment 1 of the present application provides a package structure, including: the substrate 10 and the dam 20 may further include an electronic component 30 and a cover 40.
The substrate 10 is preferably a ceramic substrate having good high temperature resistance, corrosion resistance, high thermal conductivity, high mechanical strength, and thermal expansion coefficient matching with the chip material. The substrate 10 has a first surface and a second surface opposite to the first surface, the first surface being, for example, an upper surface of the substrate 10, and the second surface being, for example, a lower surface of the substrate 10.
In some embodiments of the present application, the substrate 10 is provided with a conductive body 11 penetrating through the substrate 10 and connecting the first surface and the second surface, the substrate 10 may have a via hole 12 penetrating through the first surface and the second surface, the via hole 12 may be a straight hole, an inclined hole, a bent hole or a hole with other shapes, the conductive body 11 is located in the via hole 12, and the conductive body 11 may be a copper material. The first surface of the substrate 10 may be provided with a first conductive layer 13, the second surface of the substrate 10 may be provided with a second conductive layer 14, the first conductive layer 13 and the second conductive layer 14 are electrically connected through the conductive body 11, and the first conductive layer 13 and the second conductive layer 14 may be circuit layers made of copper. The substrate 10 may be a single-layer substrate or a multi-layer substrate, and when the substrate 10 is a multi-layer substrate, the conductive layers on two adjacent layers of the substrate 10 may be connected.
The dam 20 is disposed on the first surface of the substrate 10, and the dam 20 may be formed in a ring shape or a frame shape as a whole, and the dam 20 may be formed in other shapes as needed. The dam 20 comprises an inner layer dam body 21 and an outer layer dam body 22, the inner layer dam body 21 and the outer layer dam body 22 can be respectively and independently annular, and the inner layer dam body 21 and the outer layer dam body 22 can be arranged into other shapes according to requirements. The thickness of the dam 20 and the thickness ratio of the inner layer dam 21 and the outer layer dam 22 can be set according to requirements, and the thickness ratio of the inner layer dam 21 and the outer layer dam 22 is 1:1, 1:2, 1:3, 1:4, 1:5, 2:1, 3:1, 4:1, 5:1, 2:3, 2:5, 3:4, 4:3, 5:2, for example.
The inner-layer dam body 21 is sleeved in the outer-layer dam body 22, the inner-layer dam body 21 is provided with a top surface, an opposite inner side surface and an outer side surface, and the outer-layer dam body 22 is provided with a top surface, an opposite inner side surface and an outer side surface. The inner dam 21 and the outer dam 22 may be adjacent or not, preferably, the inner dam 21 and the outer dam 22 are adjacent, and when the inner dam 21 and the outer dam 22 are adjacent, the outer side surface of the inner dam 21 is attached to the inner side surface of the outer dam 22, so that the strength and the air tightness of the dam are improved. In some embodiments of the present application, the outer side surface of the inner-layer dam 21 is adhered to the inner side surface of the outer-layer dam 22 by an adhesive, and the adhering connection mode has a simple process, low cost and convenient popularization.
In some embodiments of the present application, the top surface of the inner dam 21 is lower than the top surface of the outer dam 22 and forms a stepped structure, when the enclosure 20 of the stepped structure is packaged, the cover 40 may be disposed on the top surface of the inner dam 21, in the prior art, the cover 40 is often mounted on the whole enclosure, the cover 40 is easy to loosen and may shift or even fall off on the enclosure 20, the package structure provides a better mounting condition for the cover 40 by disposing the stepped enclosure 20, the cover 40 for packaging may be mounted on the top surface of the inner dam 21, the movement of the cover 40 in the plane direction is limited by the outer dam 22, so the cover 40 is not easy to move relative to the enclosure 20, the stepped enclosure 20 makes the connection between the cover 40 and the enclosure 20 more stable, and can resist greater impact, improve the stability and the service life of the package structure, and the airtightness is good.
In some embodiments, the cross-sectional shape of the portion of the dam 20 below the top surface of the inner dam body 21 along the direction perpendicular to the extending direction of the dam 20 is trapezoidal or rectangular, which can effectively improve the stability of the package structure.
The inner dam 21 is made of metal, the outer dam 22 can be made of gold, silver, copper, aluminum or alloy as an example, the inner dam 21 made of metal not only facilitates welding of the cover 40, but also can withstand UV irradiation, and the inner dam 21 made of metal can improve strength of the enclosure dam 20.
Compared with the existing ceramic dam, metal dam and plastic dam, the dam 20 of the packaging structure of the embodiment of the application comprises an inner layer dam body 21 and an outer layer dam body 22, and the inner layer dam body 21 is made of metal. Compared with a ceramic dam, the inner-layer dam body 21 made of the metal material can avoid a high-temperature sintering step during preparation. Compare the metal box dam, box dam 20 of this application adopts the theory of modular design, divide into inner dam body 21 and outer dam body 22 two parts with box dam 20, can be according to the demand among the practical application, adopt the same or different technology to make the inner dam body 21 and the outer dam body 22 of multiple size separately, inner dam body 21 can be through gluing agent adhesion on outer dam body 22's medial surface and base plate 10, can avoid passing through metal kovar ring welding step, make box dam 20's preparation process more nimble, and intensity is the same or is equivalent with the metal box dam basically. Compare the plastic box dam, when packaging structure need weld lid 40 on box dam 20, can weld lid 40 on inlayer dam body 21, the gas tightness is better, and when packaging structure produced UV light, the inlayer dam body 21 of metal material can effectively tolerate the UV and shine, and in addition, the inlayer dam body 21 of metal material is higher than the intensity of plastic box dam, can improve whole packaging structure's stability. Therefore, the packaging structure of the embodiment of the application can overcome the defects of the existing box dam and meet the packaging requirements.
In some embodiments of the present application, the outer dam 22 is made of metal or plastic, the metal can improve the strength of the outer dam 22, the outer dam 22 made of plastic can reduce the manufacturing cost of the dam 20, and the material of the outer dam 22 can be flexibly selected according to the packaging requirement. The outer dam 22 may be made of gold, silver, copper, aluminum, or alloy, and the outer dam 22 made of plastic material may be made of synthetic resin or natural resin, for example.
Referring to fig. 3, the package structure may further include an electronic component 30 and a cover 40, the electronic component 30 is disposed on the first surface of the substrate 10 and electrically connected to the first conductive layer 13, the electronic component 30 may be electrically connected to the first conductive layer 13 by a wire or a soldering method, and the cover 40 is disposed on the inner dam 21 to encapsulate the electronic component 30. The cover body 40 can be adhered to the box dam 20 through an adhesive, preferably adhered to the inner-layer dam body 21, as an optimal mode, the cover body 40 is welded with the part on the top surface of the inner-layer dam body 21, airtight packaging of a packaging structure is achieved through welding, and the air tightness of a product is better.
The electronic component 30 may be a front-mounted chip, a flip chip, a vertical chip, or other functional components, for example, when the product corresponding to the package structure is an image sensor, the electronic component 30 in the package structure may be one or more of functional components such as a sensor chip and a sensing component, and the cover 40 may be a transparent cover glass; when the product corresponding to the package structure is a laser, the electronic component 30 in the package structure may be a laser chip, and the cover 40 may be a lens; when the product corresponding to the package structure is an LED module, the electronic component 30 in the package structure may be an LED chip, and the cover 40 may be a transparent cover glass.
Example 2
Referring to fig. 1 to 5, embodiment 2 of the present application provides a package structure, where the package structure is obtained by using a preparation method, where the preparation method includes steps S101 to S102, and may further include steps S103 to S105.
Step S101: a substrate 10 is provided, the substrate 10 having a first surface and a second surface opposite to each other.
The substrate 10 of the present embodiment may be the same as the substrate 10 of embodiment 1, and is not described herein again.
Step S102: the first surface of the substrate 10 is provided with a surrounding dam 20, the surrounding dam 20 comprises an inner-layer dam 21 and an outer-layer dam 22, the inner-layer dam 21 is sleeved in the outer-layer dam 22, and the inner-layer dam 21 is made of metal materials.
The dam 20 of this embodiment may be the same as the dam 20 in embodiment 1, the inner-layer dam 21 of this embodiment may be the same as the inner-layer dam 21 in embodiment 1, and the outer-layer dam 22 of this embodiment may be the same as the outer-layer dam 22 in embodiment 1, which is not described herein again.
In some embodiments of the present application, a method of disposing the inner dam 21 on the first surface of the substrate 10 includes: the inner layer dam 21 is adhered to the first surface of the substrate 10, or the inner layer dam 21 is manufactured on the first surface of the substrate 10 by adopting a vacuum coating mode firstly and then an electroplating mode. Specifically, the inner-layer dam body 21 may be manufactured first, for example, the inner-layer dam body 21 is manufactured in advance by a punch forming method, the inner-layer dam body 21 is adhered to the first surface of the substrate 10 and/or the inner side surface of the outer-layer dam body 22 by an adhesive, or a thick film is manufactured on the first surface of the substrate 10 by a vacuum coating method such as magnetron sputtering, and the obtained thick film is the inner-layer dam body 21, or a metal base layer is manufactured on the first surface of the substrate 10 by a vacuum coating method such as magnetron sputtering, and then a metal thickening layer is manufactured on the metal base layer by an electroplating method, and the manufactured metal base layer and metal thickening layer are the inner-layer dam body 21.
Compared with the existing ceramic dam, metal dam and plastic dam, in the packaging structure obtained by the preparation method of the embodiment of the application, the dam 20 comprises an inner layer dam body 21 and an outer layer dam body 22, and the inner layer dam body 21 is made of metal. Compared with a ceramic dam, the inner-layer dam body 21 made of the metal material can avoid a high-temperature sintering step during preparation. Compare the metal box dam, box dam 20 of this application adopts the theory of modular design, divide into inner dam body 21 and outer dam body 22 two parts with box dam 20, can be according to the demand among the practical application, adopt the same or different technology to make the inner dam body 21 and the outer dam body 22 of multiple size separately, inner dam body 21 can be through gluing agent adhesion on outer dam body 22's medial surface and base plate 10, can avoid passing through metal kovar ring welding step, make box dam 20's preparation process more nimble, and intensity is the same or is equivalent with the metal box dam basically. Compare the plastic box dam, when packaging structure need weld lid 40 on box dam 20, can weld lid 40 on inlayer dam body 21, the gas tightness is better, and when packaging structure produced UV light, the inlayer dam body 21 of metal material can effectively tolerate the UV and shine, and in addition, the inlayer dam body 21 of metal material is higher than the intensity of plastic box dam, can improve whole packaging structure's stability.
In some embodiments of the present application, the outer dam 22 is made of a metal material, which can improve the strength of the outer dam 22, and the material of the outer dam 22 can be gold, silver, copper, aluminum or alloy. The method for providing the outer dam 22 on the first surface of the substrate 10 comprises the following steps: the outer-layer dam 22 is adhered to the first surface of the substrate 10, or the outer-layer dam 22 is manufactured on the first surface of the substrate 10 by adopting a vacuum coating mode, or the outer-layer dam 22 is manufactured on the outer side surface of the inner-layer dam 21 by adopting an electroplating mode, or the outer-layer dam 22 is manufactured on the first surface of the substrate 10 by adopting a vacuum coating mode firstly and then adopting an electroplating mode. The vacuum coating method is, for example, magnetron sputtering. The preparation method of the outer dam 22 made of metal material may be the same as or similar to that of the inner dam 21, and is not described herein again.
In some embodiments of the present application, the outer dam 22 is made of plastic, the outer dam 22 made of plastic can reduce the manufacturing cost of the dam 20, and the outer dam 22 made of plastic is made of synthetic resin or natural resin, for example. When the outer dam 22 is made of plastic material, the following method may be adopted to dispose the outer dam 22 on the first surface of the substrate 10: the outer-layer dam 22 is adhered to the inner-layer dam 21, or the inner-layer dam 21 is used as a part of a mold for manufacturing the outer-layer dam 22, the outer-layer dam 22 is manufactured on the first surface of the base plate 10 in an injection molding mode, or the inner-layer dam 21 is embedded in the mold for manufacturing the outer-layer dam 22, the inner-layer dam 21 and the outer-layer dam 22 which are connected into a whole are manufactured in an injection molding mode, and the inner-layer dam 21 and the outer-layer dam 22 which are connected into a whole are arranged on the first surface of the base plate 10. Specifically, the outer-layer dam 22 is adhered to the first surface of the substrate 10 by an adhesive, or the inner-layer dam 21 made of a metal material is arranged on the first surface of the substrate 10, the other half mold for manufacturing the outer-layer dam 22 is placed on the first surface of the substrate 10, the half mold is combined with the inner-layer dam 21 and part of the first surface of the substrate 10 to form a mold for manufacturing the outer-layer dam 22, molten plastic is injected into the mold, the outer-layer dam 22 is formed after cooling, the other half mold is removed, the outer-layer dam 22 is integrally connected with the first surface of the substrate 10 and the inner-layer dam 21, the inner-layer dam 21 and the outer-layer dam 22 are embedded and molded to form the dam 20, or in the injection molding process of the outer-layer dam 22, the inner-layer dam 21 is embedded into the mold for manufacturing the outer-layer dam 22, molten plastic is injected into the mold, the inner-layer dam 21 and the outer-layer dam 22 are integrally connected after cooling, the mold is removed, the dam 20 is obtained, and the integrally connected inner-layer dam 21 and the outer-layer dam 22 is arranged on the first surface of the substrate 10. The method can effectively utilize the manufactured inner-layer dam body 21, compared with a mode of manufacturing the outer-layer dam body 22 first and then adhering, the manufacturing process is simplified, and the adhesiveness between the outer-layer dam body 22 and the inner-layer dam body 21 and between the outer-layer dam body 22 and the substrate 10 is better.
In some embodiments of the present application, the substrate 10 has a plurality of via holes 12 penetrating through the first surface and the second surface, the number of the via holes 12 of the substrate 10 may be multiple, and the via holes 12 may be formed on the substrate 10 by laser drilling or drilling.
Referring to fig. 1 to 3 and 5, the method for manufacturing a package structure further includes steps S103 to S105.
Step S103: a conductor 11 is formed in a via hole 12 of a substrate 10, a first conductive layer 13 is provided on a first surface of the substrate 10, a second conductive layer 14 is provided on a second surface of the substrate 10, and the first conductive layer 13 and the second conductive layer 14 are electrically connected through the conductor 11.
The conductor 11 may be made of copper, and the conductor 11 may be formed by filling or pouring a metal paste into the via hole 12 in the substrate 10 to form the conductor 11 in the via hole 12. The first conductive layer 13 and the second conductive layer 14 may be formed by a DPC (Direct Plating Copper) process.
Step S104: an electronic component 30 is provided, and the electronic component 30 is disposed on the first surface of the substrate 10 and electrically connected to the first conductive layer 13.
The electronic component 30 of this embodiment may be the same as the electronic component 30 of embodiment 1, and is not described herein again. The electronic component 30 may be electrically connected to the first conductive layer 13 by a wire or by soldering.
Step S105: a cover 40 is provided, and the cover 40 is disposed on the inner dam 21 to encapsulate the electronic component 30.
The cover 40 of the present embodiment may be the same as the cover 40 of embodiment 1, and is not described herein again. The cover body 40 can be adhered to the dam 20 by an adhesive, and as a preferable mode, the following method is adopted to arrange the cover body 40 on the inner-layer dam body 21: the cover body 40 is welded to the portion on the top surface of the inner dam 21. Compared with an adhesion mode, the airtight packaging of the packaging structure is realized through welding, and the product airtightness is better.
While the present application is described in terms of various aspects, including exemplary embodiments, the principles of the invention should not be limited to the disclosed embodiments, but are also intended to cover various modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
Claims (5)
1. A method for manufacturing a package structure, comprising:
providing a substrate, wherein the substrate is a ceramic substrate and is provided with a first surface and a second surface which are opposite;
arranging a surrounding dam on the first surface of the substrate, wherein the surrounding dam comprises an inner-layer dam body and an outer-layer dam body, the inner-layer dam body is sleeved in the outer-layer dam body, the outer side surface of the inner-layer dam body is attached to the inner side surface of the outer-layer dam body to form the inner-layer dam body and the outer-layer dam body which are arranged adjacently, the inner-layer dam body and the outer-layer dam body are made of metal materials, the inner-layer dam body is made of copper materials, the outer-layer dam body is made of aluminum materials, and the top surface of the inner-layer dam body is lower than that of the outer-layer dam body and forms a stepped structure;
the method for arranging the inner layer dam body on the first surface of the substrate comprises the following steps: manufacturing a thick film on the first surface of the substrate in a vacuum coating mode, wherein the obtained thick film is the inner-layer dam body;
the method for arranging the outer layer dam body on the first surface of the substrate comprises the following steps: and manufacturing the outer-layer dam body on the first surface of the substrate by adopting a vacuum coating mode and then an electroplating mode.
2. The method for manufacturing the package structure according to claim 1, wherein a cross-sectional shape of a portion of the dam below the top surface of the inner dam along a direction perpendicular to an extending direction of the dam is a trapezoid or a rectangle.
3. The method for manufacturing the package structure according to claim 1, wherein the substrate has a via hole penetrating through the first surface and the second surface;
the preparation method further comprises the following steps:
forming a conductor in the through hole of the substrate, arranging a first conductive layer on the first surface of the substrate, arranging a second conductive layer on the second surface of the substrate, and conducting the first conductive layer and the second conductive layer through the conductor;
providing an electronic element, arranging the electronic element on the first surface of the substrate and electrically connecting the electronic element with the first conductive layer;
and providing a cover body, and arranging the cover body on the inner layer dam body to encapsulate the electronic element.
4. The method for manufacturing the package structure according to claim 3, wherein the step of disposing the cover on the inner dam comprises: and welding the cover body and the part on the top surface of the inner-layer dam body together.
5. A package structure obtained by the method according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110177876.3A CN112967936B (en) | 2021-02-09 | 2021-02-09 | Packaging structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110177876.3A CN112967936B (en) | 2021-02-09 | 2021-02-09 | Packaging structure and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN112967936A CN112967936A (en) | 2021-06-15 |
| CN112967936B true CN112967936B (en) | 2022-11-01 |
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| CN108598072A (en) * | 2018-07-02 | 2018-09-28 | 江西科技师范大学 | A kind of UV-LED light source module preparation methods based on integrated bracket |
| CN209804706U (en) * | 2019-11-12 | 2019-12-17 | 南昌易美光电科技有限公司 | LED ceramic support structure |
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| KR100506738B1 (en) * | 2003-11-03 | 2005-08-08 | 삼성전기주식회사 | Leak-free sealing structure of a ceramic package, leak-free ceramic package and fabrication method of the ceramic package |
| TWI239655B (en) * | 2004-02-23 | 2005-09-11 | Siliconware Precision Industries Co Ltd | Photosensitive semiconductor package with support member and method for fabricating the same |
| JP2005311144A (en) * | 2004-04-23 | 2005-11-04 | Kyocera Corp | Package for housing electronic component, and the electronic equipment |
| US20070075236A1 (en) * | 2005-09-30 | 2007-04-05 | Po-Hung Chen | Packaging method of a light-sensing semiconductor device and packaging structure thereof |
| US7750449B2 (en) * | 2007-03-13 | 2010-07-06 | Micron Technology, Inc. | Packaged semiconductor components having substantially rigid support members and methods of packaging semiconductor components |
| US8508036B2 (en) * | 2007-05-11 | 2013-08-13 | Tessera, Inc. | Ultra-thin near-hermetic package based on rainier |
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| CN108598072A (en) * | 2018-07-02 | 2018-09-28 | 江西科技师范大学 | A kind of UV-LED light source module preparation methods based on integrated bracket |
| CN209804706U (en) * | 2019-11-12 | 2019-12-17 | 南昌易美光电科技有限公司 | LED ceramic support structure |
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