CN105336834A - Circuit-structure-contained mirror-metal-based LED module, production method thereof, and application thereof - Google Patents
Circuit-structure-contained mirror-metal-based LED module, production method thereof, and application thereof Download PDFInfo
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- CN105336834A CN105336834A CN201510779029.9A CN201510779029A CN105336834A CN 105336834 A CN105336834 A CN 105336834A CN 201510779029 A CN201510779029 A CN 201510779029A CN 105336834 A CN105336834 A CN 105336834A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention discloses a circuit-structure-contained mirror-metal-based LED module, a production method thereof, and application thereof. The module comprises a mirror metal substrate or a metal-nano reflective coating structure, gaskets, and LED chips. The high-reflection metal substrate has a reflection cup array with a trapezoidal cross section; and packaging electrodes and reflection circuits are pasted to upper surfaces of the parts, at the two sides of all reflection cups, of the metal substrate. The gaskets are fixed at the bottoms of the reflection cups and are connected with the packaging electrodes by circuits. The LED chips are connected with the upper surfaces of the gaskets. Packaging protection layers coating connection parts of the LED chips, the gaskets, and the circuits are arranged in the reflection cups. According to the invention, on the basis of innovation of the circuit board preparation process with the first-forming second-pasting technique, the circuit structure can be prepared on the high-reflection-metal-based packaging support to form the circuit-structure-contained high-reflection-metal-based packaging support. Because the LED chips are arranged in the reflection cups, the mutual interference is avoided, thereby improving the luminous efficiency of the LED and the utilization rate of the LED lamp.
Description
Technical field
The invention belongs to LED lamp technical field, particularly a kind of with circuit structure and high heat-conducting double-sided metallized ceramic pad, the LED module of mirror metal base or nanometer highly-reflective coating Metal Substrate, application and production method thereof.
Background technology
Current traditional LED support mainly LED particle is sealed in the support of reflector and plastics that cross section is inverted trapezoidal structure or pottery+metal electrode composition, as shown in Figure 1, has 2 electrode pins to extend outside support about LED particle.This traditional solution process is complicated, and owing to using plastics to be reflectorized material, causes reflector efficiency low on the one hand, and on the other hand because sheathing material is plastics, its thermal conductivity is poor, and dispel the heat right 2 electrode pins that only keep left, so cause integral heat sink poor effect.And the packaging of pottery+metal structure, though its heat conductivility promotes to some extent, its optical efficiency, heat transfer efficiency and integrated cost, be all in a disadvantageous position.What is more important, when these devices are applied to light fixture, need the corresponding circuit board of supporting preparation and carries out corresponding paster, welding processing with SMT equipment to LED particle, thus adding complexity and the cost of industrial chain.In addition, because of the use of the circuit board of common metal base circuit board or other type, LED heat dissipation path is extended, or can not shed smoothly because of heat energy when the extremely low conductive coefficient of custom circuit plate insulating layer (high-grade, price is high again for PVD diamond like carbon height heat-conduction circuit board) allows LED work, thus reduce light efficiency, the reliability of LED.
Another Metal Substrate COB packaging, as shown in Figure 2, because of its at silver coated aluminum substrate even in mirror-surface aluminum base board, the mode of thermoelectricity separation and COB is adopted to carry out packaged LED device, make the light of LED, hot property promotes to some extent, but be apply design targetedly mostly, dissimilar light fixture can not be applied to simultaneously; Metal Substrate COB encapsulates mostly in the plane, makes to produce mutual luminous interference problem between LED chip, causes the waste of silica gel/phosphor material powder and increases its coating difficulty and affect its luminescent properties.In fact the product light efficiency of common metal base COB encapsulation is adopted, even also low than the SMDLED light efficiency of above-mentioned individual packages.
Although common metal base COB product solves the routing problem that LED heating directly can be diffused into metal substrate, but it is when light fixture Application and preparation, need to fill out heat-conducting cream to be fixed on metal heat sink with screw pressurization again, and because this increasing corresponding cost and thermal resistance, its radiating effect obviously reduces.
One is also had to exempt from packaged LED, add in chip-scale that applied fluorescent material man-hour and left can welding electrode, but it still needs good optical, electrical, a hot integrated environment when light fixture product manufacturing is applied, conventional die and the final productsization application of exempting from packaged LED can not be met simultaneously.
Summary of the invention
For there is the technical problem that light efficiency is low, cost is high in prior art, the invention provides a kind of high reflecting metal base LED module with circuit structure, application and production method thereof, can thoroughly solve the problems of the technologies described above.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
The LED mould of a kind of mirror metal base with circuit structure or nanometer high reflecting metal base
Block, comprises
High reflecting metal substrate, it is trapezoidal reflector array that described high reflecting metal substrate has cross section, and the upper surface of the metal substrate of each reflector both sides is all fitted with encapsulated electrode and reflective circuit;
Pad, described pad is fixed on the bottom surface of described reflector, and is connected with described encapsulated electrode by circuit; Described pad upper and lower surface through metalized, upper surface can fit formal dress, vertical, inverted structure all kinds of in, the die bond form such as silver slurry, eutectic, backflow tin cream of high-power LED chip;
LED chip, described LED chip is connected with the upper surface of described pad;
The packaging protection layer of coated LED chip, pad and circuit junction is provided with in described reflector;
Described LED chip is used for vertical or inverted structure, with the method for eutectic or soldering, by the high heat conductive insulating gasket for transition of two-sided metallization, is fixed on mirror metal reflector or the packing forms at the bottom of metal+nanometer highly-reflective coating cup.
Further, described high reflecting metal substrate has the upper surface that process can be welded or all can be welded in local, and has the lower surface for welding coating.
Further, the base material of described pad is high heat conductive insulating ceramic layer, and described high heat conductive insulating ceramic layer has the two-layer surface for welding through metalized up and down.
Further, during for inverted structure chip, the exhausted groove of the divisible edge of upper surface of described pad.
Further, described pad passes through bottom surface eutectic or the reflow soldering of its lower surface and reflector.
Further, the upper surface of described pad has the eutectic that can be used for forming electrical connection between described LED chip and encapsulated electrode and to weld or tin cream weld layer is held concurrently spun gold (or filamentary silver or copper wire or aluminum steel) bonded layer.
Further, described LED chip is welded to connect by the eutectic cream/elargol/tin cream of high heat conduction and the upper surface of pad.
Further, described module can cut into square, circular, rectangle or abnormity forms the shape finally meeting LED illumination lamp design ap-plication.
With a production method for the mirror metal base LED module of circuit structure, comprise the steps:
(1) high heat conduction mirror metal thin plate can weld coating process through upper surface local, the back side, stamps out and has the array that cross sectional shape is the reflector of trapezoidal (or bowl-type); Or after high-thermal conductive metal thin plate upper and lower surface does solderability process, first stamp out and there is the array that cross sectional shape is the reflector of trapezoidal (or bowl-type), then do the high reflective nano coating process in local, form package module body;
(2) by the process of thin film circuit base material conductor layer electroplate, be prefabricated into encapsulated electrode and circuitry shapes, then circuit and encapsulated electrode be fitted on the precalculated position of metal substrate upper surface;
(3) high heat conductive insulating ceramic layer is prefabricated into a certain size pad, two surfaces up and down of described pad can weld metal process, and can eutectic or reflow soldering by the bottom surface of its lower surface and reflector;
(4) upper surface of described pad and LED chip are welded to connect, and form electrical connection, then carry out packaging protection to it between LED chip and encapsulated electrode.
Further, the described LED module prepared carries out insulating coating for secondary electic protection or the process of Parylene coating.
Compared with prior art, the beneficial effect that the present invention has is:
1. modularization and carry circuit, design, use, easy for installation.
2. adopt thermoelectric integral technology, LED chip is welded and fixed by high heat conductive insulating pad and is packaged in the layer on surface of metal of high reflecting metal substrate 1, be connected with radiator with metal layer in conjunction with body, dispel the heat effectively unobstructed, without heat radiation bottleneck effect, thus reduce junction temperature, improve the utilization ratio of light efficiency and LED.
3. independent high reflecting mirror surface reflector, significantly improves the light extraction efficiency of LED; Fluorescent material/silica gel materials are even all, save, reliable in quality (temperature rise of LED chip and fluorescent material is low, occur that sex change degeneration variable color is drifted about hardly, and optical attenuation).
4., after this module is loaded into light fixture, Modular surface is distributed with the minute surface of larger area and the silver plated circuits surface of local, therefore absorbs the light that LED sends hardly; Add peripheral reflectorized material configuration and use, can the luminous efficiency of larger lifting light fixture entirety.
5. light fixture manufacture does not relate to SMT equipment, SMDLED package support material, simplifies the structure of industrial chain and reduces cost.
6. the present invention is specially adapted to high-power high heat density light fixture, and reduce the middle low power light fixture that junction temperature improves light efficiency, comparatively SMDLED and COBLED, when using equal LED chip and phosphor material powder, light efficiency can improve 20%, and temperature rise reduces by 25 degrees Celsius, cost savings more than 15%.
7, the present invention compared with welding the production mode of vertical or flip LED device in ordinary circuit board, can effectively improve LED radiating effect, and can obtain and higher encapsulation light efficiency;
Accompanying drawing explanation
Fig. 1 is the mirror metal base LED module perspective view with circuit structure of the present invention;
Fig. 2 is Fig. 1 cross-sectional cut-away structural representation;
Fig. 3 is the structural representation that the mirror metal base LED module with circuit structure of the present invention is applied to light fixture;
Fig. 4 is the pad perspective view of applicable flip-chip.
In Fig. 1-Fig. 4,1. mirror metal substrate; 11. reflectors; 12. encapsulated electrodes; 2. pad; 21. high heat conductive insulating ceramic layers; 22. flip-chip insulation tanks; 3.LED chip; 4. packaging protection layer; 5. radiator; 6. metal layer.
Embodiment
For making those skilled in the art better understand technical scheme of the present invention, below in conjunction with the drawings and specific embodiments, the present invention is elaborated.
As depicted in figs. 1 and 2, a kind of high reflecting metal base LED module with circuit structure, comprises
Mirror metal substrate (or common metal+nanometer reflecting coating substrate) 1, it is trapezoidal reflector array that mirror metal substrate has cross section, and the upper surface of the mirror metal substrate of each reflector 11 both sides is all fitted with encapsulated electrode 12 and reflective circuit;
Pad 2, pad 2 is fixed on the bottom surface of reflector 11, and is connected with encapsulated electrode 12 by circuit;
LED chip 3, LED chip 3 is connected with the upper surface of pad 2;
The packaging protection layer 4 of coated LED chip 3, pad 2 and circuit junction is provided with in reflector 11.
When above-mentioned LED module is applied to LED lamp, the light sent, the minute surface in mirror metal substrate 1 upper surface and reflector 11, the reflective top layer of silver plated circuits, and design is at the light fixture cavity reflecting surface of modular peripheral, after this series comprehensive optical design process, improve light efficiency.
Mirror metal substrate 1 has the upper surface that process can be welded or all can be welded in local, and the lower surface had for welding coating, such as plating/chemical nickel plating, tin etc. can in soldered coating so that weld with weldability metal heat sink, be conducive to heat radiation.
The consistency of thickness of mirror metal substrate 1, it takes the form of, and the bottom surface of reflector 11 protrudes from the lower surface of mirror metal substrate 1 downwards.
The base material of pad 2 is high heat conductive insulating ceramic layer, and high heat conductive insulating ceramic layer has the two-layer surface for welding through metalized up and down.
As shown in Figure 4, the upper surface of 21 is tackled in formal dress or thin-film LED; In order to be applicable to flip-chip, the upper surface of pad 2 is divided into two parts by insulation tank 22, and the bottom surface of elongated slot 22 is the upper surface of high heat conductive insulating ceramic layer 21.
Pad 2 passes through bottom surface eutectic or the reflow soldering of its lower surface and reflector 11.
The upper surface of pad 2 with can be used for LED chip 3 carry out eutectic die bond (or silver slurry or soldering die bond) and and encapsulated electrode 12 between formed be electrically connected beat pompon layer (gold, silver, aluminium, copper wire).
LED chip 3 is welded to connect by the eutectic cream/elargol/tin cream of high heat conduction and the upper surface of pad 2.
With an application for the high reflecting metal base LED module of circuit structure, this module can cut into square, circular, rectangle or abnormity forms the shape finally meeting LED illumination lamp design ap-plication.
With a production method for the high reflecting metal base LED module of circuit structure, it comprises the steps:
(1) high-thermal conductive metal thin plate through front reflective and local or all can weld process, after coating process can be welded in the back side, form mirror metal substrate 1, then on mirror metal substrate 1, stamp out multiple cross sectional shape is trapezoidal reflector 11, multiple light cup 11 arrayed, rectangular array is illustrated in figure 1 in the present embodiment, to form package module body, thermoelectricity can be realized be separated, good heat conductive, maximize bright dipping and cost optimization function, and light interference mutual between LED chip can be avoided, improve the use amount (relative COB) of LED fluorescent powder and silica gel, improve efficiency, save encapsulating material and use circuit board carries out mounting welding all process steps and material (relative SMDLED) for LED component can be exempted.
(2) by thin film circuit base material, (its upper surface is " can beat silk bonding " and can soldering, and with the combination electrode material of dielectric adhesive layer) conductor layer surface carries out silver-plated process, make it in the welding possessing custom circuit plate, while conducting (insulation) function, meet the ball bonding requirement of LED, and required light reflection function when simultaneously realizing lamp applications, then (cross cutting is cut with cold cut, punching press, low temperature laser etc.) method such as cross cutting or punching press, thin film circuit base material conductor layer after silver-plated process is prefabricated into the shape needed for encapsulated electrode 12 and circuit, located by chip mounter again, hot pressing adds intermediate temperature setting technique, circuit and encapsulated electrode 12 are accurately also fitted on the precalculated position of mirror metal substrate 1 upper surface securely.
(3) with laser cutting or numerical control scribing processing, by high heat conductive insulating ceramic layer (as aluminium nitride, aluminium oxide etc.) be prefabricated into a certain size pad 2, two surfaces up and down of pad 2 carry out can weld metal process (as: silver-plated, nickel plating etc.), form surface conductance can weld, the Novel gasket of intermediate insulation high heat conduction, and can eutectic or reflow soldering by the bottom surface of the lower surface of pad 2 and reflector 11;
(4) upper surface of pad 2 is welded to connect by the eutectic cream/of high heat conduction or elargol or tin cream and LED chip 3, is formed and be electrically connected between LED chip 3 and encapsulated electrode 12; Also can reserving certain live width interval for beating spun gold or filamentary silver in the future in the top surface edge of pad 2, forming ball bonding layer, being electrically connected for being formed between LED chip 3 and encapsulated electrode 12.
(5) finally silica gel is mixed with fluorescent material again or remote fluorescence film carries out packaging protection to it.
To the above-mentioned LED illumination module prepared; can according to the class of insulation requirement of dissimilar LED illumination product; if desired by insulating coating or Parylene coating; carry out the process of secondary electic protection; under guarantee has good bright dipping, reflection function prerequisite, improve withstand voltage, the antistatic grade of product.
Above-mentioned or after conservation treatment, mirror metal base LED module containing conducting channel structure; also available V-CUT groover and board separator; or other cutting apparatus; be cut to the shape that square, circular, rectangle or abnormity etc. meet final LED illumination lamp design ap-plication, assembling LED illumination lamp carries out commercialization application.
The circuit board preparation technology innovation of first shaping, rear laminating, circuit structure can be prepared on above-mentioned mirror metal base package support simultaneously, form a kind of mirror metal base package support with circuit structure, its upper surface is prefabricated and be integrated with LED conducting channel, compared with traditional use SMTLED packaging, when preparing LED illumination lamp, do not need the circuit board using aluminum base circuit board or other type, do not need to carry out paster processing with SMT equipment, and do not need other material of this link.
When LED module in the present invention is applied to LED lamp, carry the structural design of the compound circuits such as connection in series-parallel because of it, the output of the power work module of LED lamp, circuit the two poles of the earth can be directly welded in respectively and LED module is driven.
Can welded encapsulation high heat conductive insulating composite ceramic material, multi-functional compound circuit base material, referring to can welded encapsulation requirement for meeting, and to having glue or glue-free polyimides copper (aluminium, stainless steel) paper tinsel base material, covers resin copper (aluminium, stainless steel) paper tinsel circuit substrate and carries out surface-treated innovation and application such as silver-plated (gold, nickel, titaniums etc.); Multi-functional refer to weldability, can conducting, insulation, high heat conduction, can be bonding etc. a series of circuit, the prerequisite function of encapsulated electrode.
As shown in Figure 3, the heat energy that in module, LED chip is operationally produced, can directly be dispelled the heat by the mirror metal material of high heat conduction and its back side metal heat sink 5 that metal layer 6 connects, namely LED chip eutectic welding manner thermal resistance is very little, makes the more common package application of LED junction temperature lower.
The present invention collect LED photovoltaic thermal environment optimization, can the applied packaging circuit substrate of modular manufacturing and use, light fixture manufacture can be directly used in make it; And fully simplify industrial chain operation---to ban in traditional SMDLED, COB package application process required package support material, for mounting process, link and the materials such as the circuit board of LED component, SMT technique and material, heat-radiation fixed structure part and heat-conducting silicone grease, by developing the application technology of whole industry, the aspect such as product cost optimization, create important and active influence.
Above embodiment is only exemplary embodiment of the present invention, and be not used in restriction the present invention, protection scope of the present invention is defined by the claims.Those skilled in the art can in essence of the present invention and protection range, and make various amendment or equivalent replacement to the present invention, this amendment or equivalent replacement also should be considered as dropping in protection scope of the present invention.
Claims (10)
1., with a high reflecting metal base LED module for circuit structure, it is characterized in that, comprise
Described high reflecting metal substrate has the reflector array that cross section is trapezoidal (or bowl-type), and the upper surface of the metal substrate of each reflector both sides is all fitted with encapsulated electrode and reflective circuit;
Pad, described pad is fixed on the bottom surface of described reflector, and is connected with described encapsulated electrode by circuit;
LED chip, described LED chip is connected with the upper surface of described pad;
The packaging protection layer of coated LED chip, pad and circuit junction is provided with in described reflector.
2. the high reflecting metal base LED module with circuit structure according to claim 1, is characterized in that, described high reflecting metal substrate has the upper surface that process can be welded or all can be welded in local, and has the lower surface for welding coating; The consistency of thickness of described high reflecting metal substrate.
3. the high reflecting metal base LED module with circuit structure according to claim 1, it is characterized in that, the base material of described pad is high heat conductive insulating ceramic layer, and described high heat conductive insulating ceramic layer has the two-layer surface for welding through metalized up and down.
4. the high reflecting metal base LED module with circuit structure according to claim 3, is characterized in that, the upper surface of described pad, when it is when encapsulating the LED chip of vertical stratification or vertical thin-film structure, is the whole piece electrode of connected state; When encapsulating inverted structure LED chip, its upper surface forms two electrodes be electrically separated from each other by fluting.
5. the high reflecting metal base LED module with circuit structure according to claim 1, is characterized in that, described pad passes through bottom surface eutectic or the reflow soldering of its lower surface and reflector.
6. the high reflecting metal base LED module with circuit structure according to claim 1, it is characterized in that, the top surface edge of described pad has the spun gold, filamentary silver or the copper that can be used for forming electrical connection between described LED chip and encapsulated electrode/aluminium wire ball bonding layer.
7. the high reflecting metal base LED module with circuit structure according to claim 1, is characterized in that, described LED chip is welded to connect by the eutectic cream/elargol/tin cream of high heat conduction and the upper surface of pad.
8. with an application for the high reflecting metal base LED module of circuit structure, it is characterized in that, described module can cut into square, circular, rectangle or abnormity forms the shape finally meeting LED illumination lamp design ap-plication.
9. a production method for LED module according to claim 1, is characterized in that, comprises the steps:
(1) high heat conduction mirror metal thin plate can weld coating process through upper surface local, the back side, stamps out and has the array that cross sectional shape is the reflector of trapezoidal (or bowl-type); Or after high-thermal conductive metal thin plate upper and lower surface does solderability process, first stamp out and there is the array that cross sectional shape is the reflector of trapezoidal (or bowl-type), then do the high reflective nano coating process in local, form package module body;
(2) by thin film circuit base material conductor layer electroplate (or gold, nickel) process, be prefabricated into encapsulated electrode (bonding spun gold, filamentary silver or copper wire aluminium wire) and circuitry shapes, then circuit and encapsulated electrode be fitted on the precalculated position of mirror metal upper surface of base plate;
(3) high heat conductive insulating ceramic layer is prefabricated into a certain size pad, two surfaces up and down of described pad can weld metal process, and can eutectic or reflow soldering by the bottom surface of its lower surface and reflector;
(4) upper surface of described pad and LED chip are welded to connect, and form electrical connection, then carry out packaging protection to it between LED chip and encapsulated electrode.
10. the mirror metal base LED module with circuit structure according to claim 9, is characterized in that, the described LED module prepared carries out insulating coating for secondary electic protection or the process of Parylene coating.
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| CN201510779029.9A CN105336834A (en) | 2015-07-17 | 2015-11-13 | Circuit-structure-contained mirror-metal-based LED module, production method thereof, and application thereof |
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| CN201510425401 | 2015-07-17 | ||
| CN2015104254016 | 2015-07-17 | ||
| CN201510779029.9A CN105336834A (en) | 2015-07-17 | 2015-11-13 | Circuit-structure-contained mirror-metal-based LED module, production method thereof, and application thereof |
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Application publication date: 20160217 |