CN202042523U - Copper particles and crystal particles combined prewelding plate for manufacturing diode - Google Patents
Copper particles and crystal particles combined prewelding plate for manufacturing diode Download PDFInfo
- Publication number
- CN202042523U CN202042523U CN2011201532159U CN201120153215U CN202042523U CN 202042523 U CN202042523 U CN 202042523U CN 2011201532159 U CN2011201532159 U CN 2011201532159U CN 201120153215 U CN201120153215 U CN 201120153215U CN 202042523 U CN202042523 U CN 202042523U
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- plate
- lead
- prewelding
- wire
- hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Abstract
A copper particles and crystal particles combined prewelding plate for manufacturing a diode belongs to the packaging field of semiconductor devices. The combined prewelding plate comprises a prewelding plate (1) and a lead loading plate (6), wherein a plurality of rows of concentric GPP crystal particles loading holes (2) and concentric copper particles loading holes (3) both are uniformly distributed on the prewelding plate (1); a locating pin (4) and a locating hole (5) are formed at the middle parts of two ends of the prewelding plate (1); a plurality of rows of lead filling holes (7), corresponding to the concentric copper particles loading holes (3) and the concentric GPP crystal particles loading holes (2), are formed on the lead loading plate (6); a locating pin (8) and a locating hole (9) are formed at the middle parts of two ends of the lead loading plate (6); and the prewelding plate (1) and the lead loading plate (6) are combined by buckling the locating pin (4) on the prewelding plate (1) and the locating hole (9) on the lead loading plate (6)as well as the locating hole (5) on the prewelding plate (1) and the locating pin (8) on the lead loading plate (6) together. The combined prewelding plate for manufacturing the diode has the advantages that the welding efficiency is high, the rate of good products is improved by 20%, and the material cost is lowered.
Description
Technical field
Make diode with composite type shot copper and crystal grain prewelding plate, belong to the semiconductor packages field, be specifically related to twin crystal grain stack solder technology.
Background technology
Welding is an important procedure in diode packaging technology, particularly the welding process of two crystal grain stacks.At present, the welding of two crystal grain is main, and what adopt is that two GPP intergranules are directly put into the weld tabs welding, and the window side that scolding tin is easily crossed GPP crystal grain in this welding manner produces Xi Qiao, causes the material short circuit, greatly reduces the yields of material.
The utility model content
Problem to be solved in the utility model is: overcome the deficiency that prior art exists, design and a kind ofly avoid crystal grain scolding tin too much to overflow window side causing Xi Qiao and cause short circuit, improve the making diode usefulness composite type shot copper and the crystal grain prewelding plate of yields.
The technical scheme that its technical problem that solves the utility model adopts is: this making diode composite type shot copper and crystal grain prewelding plate, it is characterized in that: comprise that prewelding plate and lead-in wire load plate, the concentric GPP crystal grain of uniform many rows loads hole and shot copper loading hole on the described prewelding plate, and the middle part, two ends of prewelding plate is provided with alignment pin and location hole;
Described lead-in wire loads uniform many rows and the concentric corresponding lead-in wire filling hole in shot copper loading hole and GPP crystal grain loading hole on the plate, the middle part, two ends of lead-in wire loading plate is provided with lead-in wire and loads plate alignment pin and lead-in wire loading plate location hole, alignment pin on the prewelding plate is loaded the plate alignment pin with go between loading plate location hole and location hole and lead-in wire fasten, prewelding plate and lead-in wire loading plate are connected combine.
The diameter that described top GPP crystal grain loads the hole loads the diameter in hole greater than the bottom shot copper.
The upper diameter of described lead-in wire filling hole is greater than the diameter of selected lead-in wire ailhead, and the middle part diameter is greater than the diameter of selected lead-in wire and less than the diameter of lead-in wire ailhead, and the bottom is a through hole.
The top lead angle that described GPP crystal grain loads the hole is 120 °.
Use this crystal grain shot copper prewelding plate, in welding process,, more non-window side is welded on the shot copper earlier with the window side and the shot copper welding of GPP crystal grain.We weld a shot copper with two intergranules this process, shot copper is cylindrical, diameter is less than the window side length of side of GPP crystal grain, and the distance of two intergranules is strengthened, and unnecessary scolding tin can gather and avoid the too much and Xi Qiao of window side scolding tin on the shot copper in the welding process like this.
Compared with prior art, the utility model is made diode: will increase a shot copper in the twin crystal grain material welding process, avoid crystal grain window side scolding tin to assemble too much and short circuit has improved yields.Adopt this prewelding plate and lead-in wire to load the welding fabrication that plate makes things convenient for shot copper, crystal grain, weld tabs and end lead-in wire, improved welding efficiency, improved 20% yields, reduced cost of material.
Description of drawings
Fig. 1 is a crystal grain shot copper prewelding plate master TV structure schematic diagram;
Fig. 2 is the right TV structure schematic diagram of Fig. 1;
Fig. 3 is that lead-in wire loads plate master TV structure schematic diagram;
Fig. 4 is the right TV structure schematic diagram of Fig. 3;
Fig. 5 is a welding back diode structure schematic diagram.
Fig. 1-the 5th, most preferred embodiment of the present utility model.Wherein:
1, prewelding plate 2, GPP crystal grain load hole 3, shot copper loading hole 4, alignment pin 5, location hole 6, lead-in wire loading plate 7, lead-in wire filling hole 8, lead-in wire loading plate alignment pin 9, lead-in wire loading plate location hole 10, first copper conductor 11, first weld tabs 12, a GPP crystal grain 13, shot copper 14, the 2nd GPP crystal grain 15, second weld tabs 16, the 3rd weld tabs 17, the 4th weld tabs 18, second copper conductor.
Embodiment
Below in conjunction with accompanying drawing 1-5 the utility model being made diode is described further with composite type shot copper and crystal grain prewelding plate:
With reference to Fig. 1-2
This makes diode with composite type shot copper and crystal grain prewelding plate, mainly loads plate 6 by prewelding plate 1 and lead-in wire and forms;
Described prewelding plate 1 material is a high purity graphite, profile is a rectangle, the concentric GPP crystal grain of uniform many rows loads hole 2 and shot copper loading hole 3 on the prewelding plate 1, GPP crystal grain loads 2 tops, hole one 120 ° chamfering, make crystal grain be lower than the suitable for reading of hole, be convenient to the filling of GPP crystal grain, shot copper loads hole 2 is loaded in hole 3 at GPP crystal grain bottom, total hole depth is less than the thickness of prewelding plate 1, and the aperture in GPP crystal grain loading hole 2 is greater than the crystal grain diagonal of the prewelding of wanting.The diameter that top GPP crystal grain loads hole 2 loads the diameter in hole 3 greater than the bottom shot copper, and shot copper loads 3 bottoms, hole and connects lead-in wire.The middle part, two ends of prewelding plate 1 is provided with alignment pin 4 and location hole 5.
With reference to Fig. 3-4
It is high purity graphite that described lead-in wire loads plate 6 materials, the profile size is identical with described crystal grain prewelding plate, uniform arrange with concentric shot copper loading hole 3 and GPP crystal grain loaded hole 2 corresponding lead-in wire filling holes 7 more on the lead-in wire loading plate 6, the upper diameter of lead-in wire filling hole 7 is greater than the diameter of selected lead-in wire ailhead, the middle part diameter is greater than the diameter of selected lead-in wire and less than the diameter of lead-in wire ailhead, and the bottom is a through hole.The middle part, two ends of lead-in wire loading plate 6 is provided with lead-in wire and loads plate alignment pin 8 and lead-in wire loading plate location hole 9.
Alignment pin on the prewelding plate 14 and lead-in wire are loaded plate location hole 9 and location hole 5 load plate alignment pin 8 with lead-in wire and fasten, prewelding plate 1 is connected with lead-in wire loading plate 6 combines.
Welding process is as follows:
With reference to Fig. 5
1, shot copper 13 fillings: use special sucker shot copper 13 to be picked up, and by alignment pin 4 and location hole 5 location shot copper 13 is put into shot copper and load hole 3 with pull of vacuum.
2, second weld tabs, 15 fillings: use special sucker second weld tabs 15 to be picked up, and by alignment pin 4 and location hole 5 location second weld tabs 15 is put into GPP crystal grain and load hole 2 with pull of vacuum.
3, a GPP crystal grain 12 fillings: use special sucker the one GPP crystal grain 12 to be picked up, and by alignment pin 4 and location hole 5 location the one GPP crystal grain 12 is put into GPP crystal grain and load hole 2 with pull of vacuum.
4, first weld tabs, 11 fillings: use special sucker first weld tabs 11 to be picked up, and by alignment pin 4 and location hole 5 location first weld tabs 11 is put into GPP crystal grain and load hole 2 with pull of vacuum.
5, first copper conductor, 10 fillings: use the lead-in wire of Fig. 3 to load plate 6 fillings first copper conductor 10.
6, prewelding plate 1 prewelding: alignment pin on the prewelding plate 14 and lead-in wire are loaded plate location hole 9 and location hole 5 load plate alignment pin 8 with lead-in wire and fasten, prewelding plate 1 is connected with lead-in wire loading plate 6 combines, first copper conductor 10 is contacted with first weld tabs 11; The prewelding plate 1 that combines is loaded plate 6 with lead-in wire advance soldering furnace welding (welding temperature is about 300 degrees centigrade).
7, pre-first copper conductor 10, first weld tabs 11, a GPP crystal grain 12, second weld tabs 15, shot copper 13 and the 3rd weld tabs 16, the 2nd GPP crystal grain 14, the 4th weld tabs 17, second copper conductor 18 welded together advanced soldering furnace welding, the same prior art of welding manner.
The above, it only is preferred embodiment of the present utility model, be not to be the restriction of the utility model being made other form, any those skilled in the art may utilize the technology contents of above-mentioned announcement to be changed or be modified as the equivalent embodiment of equivalent variations.But every technical solutions of the utility model content that do not break away to any simple modification, equivalent variations and remodeling that above embodiment did, still belongs to the protection range of technical solutions of the utility model according to technical spirit of the present utility model.
Claims (4)
1. make diode composite type shot copper and crystal grain prewelding plate for one kind, it is characterized in that: comprise that prewelding plate (1) and lead-in wire load plate (6), described prewelding plate (1) is gone up the concentric GPP crystal grain of uniform many rows and is loaded hole (2) and shot copper loading hole (3), and the middle part, two ends of prewelding plate (1) is provided with alignment pin (4) and location hole (5);
Described lead-in wire loads upward uniform arrange with concentric shot copper loading hole (3) and GPP crystal grain of plate (6) more and loads hole (2) corresponding lead-in wire filling holes (7), the middle part, two ends of lead-in wire loading plate (6) is provided with lead-in wire loading plate alignment pin (8) and lead-in wire loads plate location hole (9), alignment pin (4) on the prewelding plate (1) and lead-in wire are loaded plate location hole (9) and location hole (5) load plate alignment pin (8) with lead-in wire and fasten, prewelding plate (1) is connected with lead-in wire loading plate (6) combines.
2. making diode according to claim 1 composite type shot copper and crystal grain prewelding plate is characterized in that: the diameter that described top GPP crystal grain loads hole (2) loads the diameter in hole (3) greater than the bottom shot copper.
3. making diode according to claim 1 composite type shot copper and crystal grain prewelding plate, it is characterized in that: the upper diameter of described lead-in wire filling hole (7) is greater than the diameter of selected lead-in wire ailhead, the middle part diameter is greater than the diameter of selected lead-in wire and less than the diameter of lead-in wire ailhead, and the bottom is a through hole.
4. making diode according to claim 1 and 2 composite type shot copper and crystal grain prewelding plate is characterized in that: the top lead angle that described GPP crystal grain loads hole (2) is 120 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201532159U CN202042523U (en) | 2011-05-13 | 2011-05-13 | Copper particles and crystal particles combined prewelding plate for manufacturing diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011201532159U CN202042523U (en) | 2011-05-13 | 2011-05-13 | Copper particles and crystal particles combined prewelding plate for manufacturing diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202042523U true CN202042523U (en) | 2011-11-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011201532159U Expired - Fee Related CN202042523U (en) | 2011-05-13 | 2011-05-13 | Copper particles and crystal particles combined prewelding plate for manufacturing diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202042523U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474377A (en) * | 2013-09-12 | 2013-12-25 | 扬州扬杰电子科技股份有限公司 | Pre-soldering jig for GPP chips and using method thereof |
| CN111730161B (en) * | 2020-06-30 | 2021-06-22 | 安徽安美半导体有限公司 | Copper particle double-side pre-welding device and welding method |
-
2011
- 2011-05-13 CN CN2011201532159U patent/CN202042523U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103474377A (en) * | 2013-09-12 | 2013-12-25 | 扬州扬杰电子科技股份有限公司 | Pre-soldering jig for GPP chips and using method thereof |
| CN103474377B (en) * | 2013-09-12 | 2016-04-06 | 扬州扬杰电子科技股份有限公司 | A kind of prewelding tool of GPP chip and using method thereof |
| CN111730161B (en) * | 2020-06-30 | 2021-06-22 | 安徽安美半导体有限公司 | Copper particle double-side pre-welding device and welding method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20111116 Termination date: 20140513 |