CN201392836Y - 扁平式封装半控桥臂器件 - Google Patents

扁平式封装半控桥臂器件 Download PDF

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CN201392836Y
CN201392836Y CN200920042167U CN200920042167U CN201392836Y CN 201392836 Y CN201392836 Y CN 201392836Y CN 200920042167 U CN200920042167 U CN 200920042167U CN 200920042167 U CN200920042167 U CN 200920042167U CN 201392836 Y CN201392836 Y CN 201392836Y
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沈富德
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

本实用新型涉及一种扁平式封装半控桥臂器件，包括电极、连接片、可控硅芯片、整流二极管芯片、门极引线、环氧树脂封装体，其特征在于：所述电极为四个电极，它们分别是第一电极、第二电极、第三电极、第四电极，所述可控硅芯片和整流二极管芯片设置在第一电极的电极片上，并且可控硅芯片的负极和整流二极管芯片的正极分别与该电极片电连接，上述可控硅芯片的正极与第三电极的电极片通过连接片电连接，整流二极管芯片的负极与第四电极的电极片通过连接片电连接，可控硅芯片的门极与第二电极的电极片通过门极引线电连接。本产品的优点：体积小、生产工艺简单、成本低、性能稳定可靠。

Description

扁平式封装半控桥臂器件
技术领域
本实用新型涉及一种半控桥臂器件，尤其是一种扁平式封装半控桥臂器件。
背景技术
目前市场上同等功率的半控桥臂器件都体积较大，因此在使用场合往往占据了相当大的使用空间，并且很不适合在线路板上安装使用，使得整机的外形尺寸也就相对偏大，并且相应的制作成本也就大幅度提高。
实用新型内容
本实用新型要解决的技术问题是：提供一种扁平式封装半控桥臂器件，使其体积小，成本低。
为了克服背景技术中存在的缺陷，本实用新型解决其技术问题所采用的技术方案是：一种扁平式封装半控桥臂器件，包括电极、连接片、可控硅芯片、整流二极管芯片、门极引线、环氧树脂封装体，每个电极由一个电极片和一个电极引脚组成，各电极片分开设置且排列在同一平面内，电极片、连接片、可控硅芯片、整流二级管芯片、门极引线均封装在环氧树脂封装体内，各电极引脚由环氧树脂封装体的同一侧伸出，所述电极为四个电极，所述可控硅芯片和整流二极管芯片设置在第一电极的电极片上，并且可控硅芯片的负极和整流二极管芯片的正极分别与该电极片电连接，上述可控硅芯片的正极与第三电极的电极片通过连接片电连接，整流二极管芯片的负极与第四电极的电极片通过连接片电连片电连接，整流二极管芯片的负极与第四电极的电极片通过连接片电连接，可控硅芯片的门极与第二电极的电极片通过门极引线电连接。
所述连接片和电极片之间设有隔离陶瓷片。
所述环氧树脂封装体的外形呈扁平状且其长为(35±3)mm、宽为(23±3)mm、厚为(3±2)mm。
所述环氧树脂封装体的中间留有安装孔。
有益效果：采用本实用新型的技术方案，能减小产品体积而且生产工艺简化、成本降低、使用方便，适合大批量生产，特别针对线路板使用来说，安装空间大大减小，性能稳定可靠。
附图说明
下面结合附图和具体实施方式对本实用新型作进一步详细地说明。
图1是本实用新型的主视结构示意图；
图2是图1的左视局部剖视图；
图3是不带有环氧树脂封装体的本实用新型内部结构示意图；
图4是本实用新型组成的扁平式封装半控桥臂器件电路的电路示意图。
其中：1为第一电极、2为第二电极、3为第三电极、4为第四电极、1-1为第一电极片、2-1为第二电极片、3-1为第三电极片、4-1为第四电极片、1-2为第一电极引脚、2-2为第二电极引脚、3-2为第三电极引脚、4-2为第四电极引脚，5为连接片、5-1为第一连接片、5-2为第二连接片、6为可控硅芯片、7为整流二极管芯片、8为门极引线、9为环氧树脂封装体、10为隔离陶瓷片、11为安装孔、12为倒角。
具体实施方式
如图1、2、3所示的扁平式封装半控桥臂器件包括电极、连接片5、可控硅芯片6、整流二极管芯片7、门极引线8、环氧树脂封装体9，所述电极为四个电极，它们分别是第一电极1、第二电极2、第三电极3和第四电极4，连接片5为两片，它们分别是第一连接片5-1和第二连接片5-2，每个电极由一个电极片和一个电极引脚组成，四个电极片1-1、2-1、3-1、4-1分开设置且排列在同一平面内，各电极、连接片5、可控硅芯片6、整流二级管芯片7、门极引线8均封装在环氧树脂封装体9内，四个电极引脚1-2、2-2、3-2、4-2由环氧树脂封装体9的同一侧伸出，环氧树脂封装体9的外形呈矩形且为扁平状，其长为(35±3)mm、宽为(23±3)mm、厚为(3±2)mm，其四角中有一角处设置有起识别作用的倒角12，环氧树脂封装体9的中间留有安装孔11，可控硅芯片6和整流二极管芯片7设置在第一电极1的电极片1-1上，并且可控硅芯片6的负极和整流二极管芯片7的正极分别与该电极片1-1电连接，上述可控硅芯片6的正极与第三电极3的电极片3-1通过连接片5-1电连接，整流二极管芯片7的负极与第四电极4的电极片4-1通过连接片5-2电连接，为确保连接片与电极片不接触，所述连接片5和电极片之间设有隔离陶瓷片10，可控硅芯片6的门极与第二电极2的电极片2-1通过门极引线8电连接。这样组成如图4所示的扁平式封装半控桥臂器件电路。
本产品使用时将四个引脚分别焊接于线路板四个功能孔，其中第一引脚1-2作为可控硅芯片的正极与整流二极管芯片的负极，第三引脚3-2作为可控硅芯片的阴极，第二引脚2-2作为可控硅芯片的门极，第四引脚4-2作为二极管芯片的阳极。

Claims (4)

1、一种扁平式封装半控桥臂器件，包括电极、连接片(5)、可控硅芯片(6)、整流二极管芯片(7)、门极引线(8)、环氧树脂封装体(9)，每个电极由一个电极片和一个电极引脚组成，各电极片分开设置且排列在同一平面内，电极、连接片(5)、可控硅芯片(6)、整流二级管芯片(7)、门极引线(8)均封装在环氧树脂封装体(9)内，各电极引脚由环氧树脂封装体(9)的同一侧伸出，其特征在于：所述电极为四个电极(1、2、3、4)，所述可控硅芯片(6)和整流二极管芯片(7)设置在第一电极(1)的电极片(1-1)上，并且可控硅芯片(6)的负极和整流二极管芯片(7)的正极分别与该电极片(1-1)电连接，上述可控硅芯片(6)的正极与第三电极(3)的电极片(3-1)通过连接片(5)电连接，整流二极管芯片(7)的负极与第四电极(4)的电极片(4-1)通过连接片(5)电连接，可控硅芯片(6)的门极与第二电极(2)的电极片(2-1)通过门极引线(8)电连接。
2、根据权利要求1所述的扁平式封装半控桥臂器件，其特征在于：所述连接片(5)和电极片之间设有隔离陶瓷片(10)。
3、根据权利要求1所述的扁平式封装半控桥臂器件，其特征在于：所述环氧树脂封装体(9)的外形呈扁平状且其长为(35±3)mm、宽为(23±3)mm、厚为(3±2)mm。
4、根据权利要求1所述的扁平式封装半控桥臂器件，其特征在于：所述环氧树脂封装体(9)的中间留有安装孔(11)。
CN200920042167U 2009-03-25 2009-03-25 扁平式封装半控桥臂器件 Expired - Fee Related CN201392836Y (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101982875A (zh) * 2010-09-02 2011-03-02 徐永才 N基材二极管共阳半桥在to-220中的封装结构
CN103151326A (zh) * 2013-02-28 2013-06-12 绍兴旭昌科技企业有限公司 一种半波可控全波桥式整流器
CN104347574B (zh) * 2014-10-10 2017-04-26 苏州技泰精密部件有限公司 引线框架电路及其制作方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101982875A (zh) * 2010-09-02 2011-03-02 徐永才 N基材二极管共阳半桥在to-220中的封装结构
CN103151326A (zh) * 2013-02-28 2013-06-12 绍兴旭昌科技企业有限公司 一种半波可控全波桥式整流器
CN103151326B (zh) * 2013-02-28 2015-12-09 浙江明德微电子股份有限公司 一种半波可控全波桥式整流器
CN104347574B (zh) * 2014-10-10 2017-04-26 苏州技泰精密部件有限公司 引线框架电路及其制作方法

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