CN103151326B - 一种半波可控全波桥式整流器 - Google Patents

一种半波可控全波桥式整流器 Download PDF

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CN103151326B
CN103151326B CN201310062623.7A CN201310062623A CN103151326B CN 103151326 B CN103151326 B CN 103151326B CN 201310062623 A CN201310062623 A CN 201310062623A CN 103151326 B CN103151326 B CN 103151326B
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邓爱民
张槐金
谢晓东
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ZHEJIANG MINGDE MICROELECTRONIC Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

本发明公开一种半波可控全波桥式整流器，属于半导体器件领域。包括塑封体、整流芯片、以及设置在塑封体内的焊盘和设置在塑封体外的电极端子等，所述整流芯片包括1个晶闸管芯片和3个二极管芯片。上述整流器输出电流半波可控，应用范围广；而且，只需要4个整流芯片即可达到可控半波整流的目的，大大减小了整流器的体积小，有利于电路的微型化，且降低了制造成本。

Description

一种半波可控全波桥式整流器
技术领域
本发明涉及一种半波可控全波桥式整流器，属于半导体器件领域。
背景技术
单相桥式全波整流电路可分为不控整流电路、半控整流电路和全控整流电路，不控整流电路完全由普通整流二极管组成，其中每个二极管在工作时的导通角由外电路决定；半控整流电路由晶闸管和二极管混合组成，其中每个二极管、晶闸管在工作时的导通角由晶闸管的控制电路决定，在这种电路中，流过负载的电流不仅取决于负载的大小、种类，而且也依赖于其中的控制电路。这为相当多的应用（例如调速、调温等）提供了极大的方便；全控整流电路全部由晶闸管组成，输出的电流均可通过控制电路实现可控。无论是全控整流还是半控整流均可调节每个输入半波的导通角度。然而当只需调节一个桥臂上的导通角度使其输出只为可控半波与不控半波的叠加时，无论是一般意义上的半控整流电路还是全控整流电路都显得过于复杂，以至于必须耗费很高的成本。目前可实现这种半波可控全波整流的电路主要由整流二极管和晶闸管或继电器组成，需要用到的元器件较多，成本高，不可靠，也不利于电路的微型化。
有鉴于此，本发明人对此进行研究，专门开发出一种半波可控全波桥式整流器，本案由此产生。
发明内容
本发明的目的是提供一种输出电流半波可控、体积小且成本低的半波可控全波桥式整流器。
为了实现上述目的，本发明的解决方案是：
一种半波可控全波桥式整流器，包括塑封体、整流芯片、以及设置在塑封体内的焊盘和设置在塑封体外的电极端子等，所述整流芯片包括1个晶闸管芯片和3个二极管芯片，其中，晶闸管芯片的P极和1个二极管芯片的P极焊接在第一焊盘上；另两个二极管芯片的N极焊接在第三焊盘上，晶闸管芯片的门极通过跳线与第四焊盘相连，晶闸管芯片的N极、第二焊盘，以及设置在第三焊盘上的其中一个二极管芯片的P极通过跳线相互连接；第一焊盘上的二极管芯片N极、第五焊盘，以及设置在第三焊盘上的另一个二极管芯片的P极也通过跳线相互连接；第一焊盘与负极输出端子相连，第二焊盘和第五焊盘各连接一个交流输入端子，第三焊盘与正极输出端子相连，第四焊盘与控制信号输入端子相连。
上述塑封体上还设置有塑封体凸台，可增强安装抗应力强度。
第一焊盘和第三焊盘焊接整流芯片的位置上设有网格状定位区，防止焊料的滑移，便于焊料的附着和芯片的精确定位。
上述半波可控全波桥式整流器的工作原理：当与第二焊盘相连的交流输入端子输入正向电压时，所输出的负载电流是不可调节的；当与第五焊盘相连的交流输入端子输入正向电压时，通过控制与第四焊盘相连的控制信号输入端子的输入信号，进而控制晶闸管芯片的导通角θ，实现对晶闸管的导通与关闭进行控制调节，即可改变负载输出电流的平均值，从而达到半波可控整流的目的。
与现有技术相比，本发明具有如下有益效果：（一）输出电流半波可控，应用范围广；（二）只需要4个整流芯片即可达到可控半波整流的目的，大大减小了整流器的体积，有利于电路的微型化，且降低了制造成本。
以下结合附图及具体实施例对本发明做进一步详细描述。
附图说明
图1为本实施例的半波可控全波桥式整流器外观主视图；
图2为本实施例的半波可控全波桥式整流器外观左视图；
图3为本实施例的半波可控全波桥式整流器内部结构剖视图；
图4为图3的左视图；
图5为本实施例的半波可控全波桥式整流器电路原理图；
图6为本实施例的半波可控全波桥式整流器整流工作原理图。
标号说明
塑封体1；塑封体凸台2；
焊盘3；第一焊盘31；第二焊盘32；第三焊盘33；第四焊盘34；第五焊盘35；
电极端子4；控制信号输入端子41；正极输出端子42；交流输入端子43；交流输入端子44；负极输出端子45；
跳线51；跳线52；跳线53；
晶闸管芯片61；二极管芯片62；二极管芯片63；二极管芯片64。
具体实施方式
如图1-4所示，一种半波可控全波桥式整流器，包括塑封体1、整流芯片、以及设置在塑封体内的焊盘3和设置在塑封体外的电极端子4等，所述整流芯片包括1个晶闸管芯片61和3个二极管芯片62~64，其中，晶闸管芯片61的P极和二极管芯片64的P极焊接在第一焊盘31上；另两个二极管芯片62和63的N极焊接在第三焊盘33上，晶闸管芯片61的门极通过跳线51与第四焊盘34相连，晶闸管芯片61的N极、第二焊盘32，以及设置在第三焊盘33上的二极管芯片63的P极通过跳线52相互连接；第一焊盘31上的二极管芯片64的N极、第五焊盘35，以及设置在第三焊盘33上的二极管芯片62的P极通过跳线53相互连接；第一焊盘31与负极输出端子45相连，第二焊盘32连接交流输入端子43，,第五焊盘35连接交流输入端子44，第三焊盘33与正极输出端子42相连，第四焊盘34与控制信号输入端子41相连。
在本实施例中，晶闸管芯片61和二极管芯片62~64可根据负载电路额定电流来选择相应规格的芯片。
上述塑封体上还设置有塑封体凸台2，可增强安装抗应力强度。
第一焊盘31和第三焊盘33焊接整流芯片的位置上均设有网格状定位区，网格状定位区与焊盘3是一体的，在焊盘3成型过程中形成，在焊盘3设计时，由于焊3可放置芯片的区域较宽，如果不设置定位区的话芯片会滑移，因此设置网格状定位区可以防止焊料的滑移，便于焊料的附着和芯片的精确定位。
如图5-6所示，上述半波可控全波桥式整流器的工作原理：当与第二焊盘32相连的交流输入端子43输入正向电压时，所输出的负载电流是不可调节的；当与第五焊盘35相连的交流输入端子44输入正向电压时，通过控制与第四焊盘34相连的控制信号输入端子41的输入信号，进而控制晶闸管芯片61的导通角θ，对晶闸管61的导通与关闭进行控制调节，即可改变负载输出电流的平均值，从而达到半波可控整流的目的。
上述实施例和图式并非限定本发明的产品形态和式样，任何所属技术领域的普通技术人员对其所做的适当变化或修饰，皆应视为不脱离本发明的专利范畴。

Claims (2)

1.一种半波可控全波桥式整流器，其特征在于：包括塑封体、整流芯片、以及设置在塑封体内的焊盘和设置在塑封体外的电极端子，所述整流芯片包括1个晶闸管芯片和3个二极管芯片，其中，晶闸管芯片的P极和1个二极管芯片的P极焊接在第一焊盘上；另两个二极管芯片的N极焊接在第三焊盘上，晶闸管芯片的门极通过跳线与第四焊盘相连，晶闸管芯片的N极、第二焊盘，以及设置在第三焊盘上的其中一个二极管芯片的P极通过跳线相互连接；第一焊盘上的二极管芯片N极、第五焊盘，以及设置在第三焊盘上的另一个二极管芯片的P极也通过跳线相互连接；第一焊盘与负极输出端子相连，第二焊盘和第五焊盘各连接一个交流输入端子，第三焊盘与正极输出端子相连，第四焊盘与控制信号输入端子相连；
第一焊盘和第三焊盘焊接整流芯片的位置上设有网格状定位区。
2.如权利要求1所述的一种半波可控全波桥式整流器，其特征在于：上述塑封体上还设置有塑封体凸台。
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3178467A (en) * 1968-11-22 1970-05-28 Improvements in voltage regulated d.c. power supplies
CN2609188Y (zh) * 2003-03-18 2004-03-31 常州迪柯电子有限公司 扁平封装结构的功率模块
CN201392836Y (zh) * 2009-03-25 2010-01-27 沈富德 扁平式封装半控桥臂器件

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU3178467A (en) * 1968-11-22 1970-05-28 Improvements in voltage regulated d.c. power supplies
CN2609188Y (zh) * 2003-03-18 2004-03-31 常州迪柯电子有限公司 扁平封装结构的功率模块
CN201392836Y (zh) * 2009-03-25 2010-01-27 沈富德 扁平式封装半控桥臂器件

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