CN201011657Y - 三相整流桥式扁平封装功率模块 - Google Patents

三相整流桥式扁平封装功率模块 Download PDF

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CN201011657Y
CN201011657Y CNU2006201690471U CN200620169047U CN201011657Y CN 201011657 Y CN201011657 Y CN 201011657Y CN U2006201690471 U CNU2006201690471 U CN U2006201690471U CN 200620169047 U CN200620169047 U CN 200620169047U CN 201011657 Y CN201011657 Y CN 201011657Y
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chip
electrode
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沈富德
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

本实用新型特别涉及一种三相整流桥式扁平封装功率模块。它包括电极、连接片(6)、芯片(7)、绝缘树脂封装体(8)，每个电极由一个电极片和一个电极脚组成，所述电极为五个电极(1、2、3、4、5)，芯片(7)为六片，芯片(71、72、73)设置在电极片(11)上，芯片(74、75、76)设置在电极片(51)上，芯片(71)与芯片(74)另一端通过与电级片(41)相连的连接片(6)电连接，芯片(72)与芯片(75)另一端通过与电级片(31)相连的连接片(6)电连接，芯片(73)与芯片(76)另一端通过与电级片(21)相连的连接片(6)电连接。本实用新型好处：接点多，使用范围广；成本少；工作稳定性好。

Description

三相整流桥式扁平封装功率模块
技术领域
本实用新型涉及一种扁平封装功率模块，特别涉及一种三相整流桥式扁平封装功率模块。
背景技术
目前，公知的扁平封装功率模块包括有电极、连接片、芯片、绝缘树脂封装体，每个电极由一个电极片和一个电极脚组成，各电极片分开设置且排列在同一平面内，电极片、连接片、芯片均封装在绝缘树脂封装体内，电极脚由绝缘树脂封装体的同一侧伸出，封装时选用不同的芯片以及相应的连接方式，可以得出不同的功率模块。目前公知的这些扁平封装功率模块有四个电极，也就是说从绝缘树脂封装体的同一侧伸出的电极脚也均为四个脚，这样就使现有的扁平封装功率存在着以下缺陷：由于只有四个电极脚，电极脚少，因此造成功率模块的接点过少，使用范围受到限制；同时由于电极脚少，完成连接需要增加功率模块的数量，这就造成了成本的增加和占用空间大等问题。
发明内容
本实用新型的目的是克服现有技术的不足，提供一种有五个电极、三相整流桥式连接的三相整流桥式扁平封装功率模块。
实现上述目的的技术方案是：一种三相整流桥式扁平封装功率模块，包括电极、连接片、芯片、绝缘树脂封装体，每个电极由一个电极片和一个电极脚组成，各电极片分开设置且排列在同一平面内，电极片、连接片、芯片均封装在绝缘树脂封装体内，电极脚由绝缘树脂封装体的同一侧伸出，所述的电极为五个电极，芯片为六片芯片，第一至第三片芯片设置在第一个电极的电极片上，并且第一至第三片芯片的一端分别与这个电极片电连接，第四至第六片芯片设置在第五个电极的电极片上，并且第四至第六片芯片的一端分别与这个电极片电连接，第一片芯片的另一端与第四片芯片的另一端通过与第四个电极的电级片相连接的连接片电连接，第二片芯片的另一端与第五片芯片的另一端通过与第三个电极的电级片相连接的连接片电连接，第三片芯片的另一端与第六片芯片的另一端通过与第二个电极的电级片相连接的连接片电连接。
采用上述技术方案后，带来的好处是：(1)接点多，使用范围广。由于有五个电极，增加了电极的个数，因此接点多，使用范围广；(2)、成本少。由于电极脚增多，完成与四个电极相同的连接需要的功率模块的数量就少，因此成本降低，并且占用空间也小，便于电子类产品向小型化、规模化发展；(3)、工作稳定性好。本实用新型提供的三相整流桥式功率模块，可以控制输出电压的大小，且工作稳定性好，干扰小。
附图说明
图1为本实用新型的主视结构示意图；
图2为图1的左视局部剖视图；
图3为不带有绝缘树脂封装体的本实用新型内部结构示意图；
图4为本实用新型组成的三相整流桥式电路的电路示意图。
具体实施方式
下面结合附图和实施例对本实用新型作进一步详细的说明。
如图1、2、3所示，  一种三相整流桥式扁平封装功率模块，包括电极、连接片6、芯片7、绝缘树脂封装体8，所述的电极为五个电极1、2、3、4、5，连接片6为六片连接片61、62、63、64、65、66，芯片7为六片芯片71、72、73、74、75、76，且均为二极管。每个电极由一个电极片和一个电极脚组成，各电极片分开设置且排列在同一平面内，电极片、连接片6、芯片7均封装在绝缘树脂封装体8内，绝缘树脂封装体8呈矩形，其四角中有一角处设置有起识别方面作用的倒角10，绝缘树脂封装体8的中部开有一个起安装作用的通孔9，五个电极脚12、22、32、42、52由绝缘树脂封装体8的同一侧伸出，第一至第三片芯片71、72、73固接在第一个电极1的电极片11上，并且第一至第三片芯片71、72、73的一端分别与这个电极片11电连接，第四至第六片芯片74、75、76固接在第五个电极5的电极片51上，并且第四至第六片芯片74、75、76的一端分别与这个电极片51电连接，第一片连接片61的一端与第一片芯片71的另一端电连接，第一片连接片61的另一端与第四个电极4的电极片41电连接，第四片连接片64的一端与第四片芯片74的另一端电连接，第四片连接片64的另一端与第四个电极4的电极片41电连接，第二片连接片62的一端与第二片芯片72的另一端电连接，第二片连接片62的另一端与第三个电极3的电极片31电连接，第五片连接片65的一端与第五片芯片75的另一端电连接，第五片连接片65的另一端与第三个电极3的电极片31电连接，第三片连接片63的一端与第三片芯片73的另一端电连接，第三片连接片63的另一端与第二个电极2的电极片21电连接，第六片连接片66的一端与第六片芯片76的另一端电连接，第六片连接片66的另一端与第二个电极2的电极片21电连接。这样组成如图4所示的三相整流桥式电路。
本实用新型的芯片7根据需要也可以选用可控硅、三极管、IGBT、MOSFET、电阻、电容、压敏元件、热敏元件等不同芯片，从而得到不同的三相整流桥式扁平封装功率模块。

Claims (2)

1.一种三相整流桥式扁平封装功率模块，包括电极、连接片(6)、芯片(7)、绝缘树脂封装体(8)，每个电极由一个电极片和一个电极脚组成，各电极片分开设置且排列在同一平面内，电极片、连接片(6)、芯片(7)均封装在绝缘树脂封装体(8)内，电极脚由绝缘树脂封装体(8)的同一侧伸出，其特征在于：所述的电极为五个电极(1、2、3、4、5)，芯片(7)为六片芯片(71、72、73、74、75、76)，第一至第三片芯片(71、72、73)设置在第一个电极(1)的电极片(11)上，并且第一至第三片芯片(71、72、73)的一端分别与这个电极片(11)电连接，第四至第六片芯片(74、75、76)设置在第五个电极(5)的电极片(51)上，并且第四至第六片芯片(74、75、76)的一端分别与这个电极片(51)电连接，第一片芯片(71)的另一端与第四片芯片(74)的另一端通过与第四个电极(4)的电级片(41)相连接的连接片(6)电连接，第二片芯片(72)的另一端与第五片芯片(75)的另一端通过与第三个电极(3)的电级片(31)相连接的连接片(6)电连接，第三片芯片(73)的另一端与第六片芯片(76)的另一端通过与第二个电极(2)的电级片(21)相连接的连接片(6)电连接。
2.根据权利要求1所述的三相整流桥式扁平封装功率模块，其特征在于：所述的芯片(71、72、73、74、75、76)均为二极管。
CNU2006201690471U 2006-12-28 2006-12-28 三相整流桥式扁平封装功率模块 Expired - Fee Related CN201011657Y (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894834A (zh) * 2010-07-06 2010-11-24 日银Imp微电子有限公司 一种桥式驱动电路芯片
CN102332832A (zh) * 2010-07-12 2012-01-25 昆山巩诚电器有限公司 车用整流调节器及其制作工艺
CN106449586A (zh) * 2016-08-05 2017-02-22 苏州固锝电子股份有限公司 大功率整流桥结构

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101894834A (zh) * 2010-07-06 2010-11-24 日银Imp微电子有限公司 一种桥式驱动电路芯片
CN102332832A (zh) * 2010-07-12 2012-01-25 昆山巩诚电器有限公司 车用整流调节器及其制作工艺
CN106449586A (zh) * 2016-08-05 2017-02-22 苏州固锝电子股份有限公司 大功率整流桥结构
WO2018024043A1 (zh) * 2016-08-05 2018-02-08 苏州固锝电子股份有限公司 大功率整流桥结构

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