WO2018024043A1 - 大功率整流桥结构 - Google Patents

大功率整流桥结构 Download PDF

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WO2018024043A1
WO2018024043A1 PCT/CN2017/089463 CN2017089463W WO2018024043A1 WO 2018024043 A1 WO2018024043 A1 WO 2018024043A1 CN 2017089463 W CN2017089463 W CN 2017089463W WO 2018024043 A1 WO2018024043 A1 WO 2018024043A1
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connecting piece
shaped connecting
strip
shaped
diode chip
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PCT/CN2017/089463
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English (en)
French (fr)
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何洪运
程琳
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苏州固锝电子股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

Definitions

  • the present invention relates to a rectifying semiconductor device, and more particularly to a high power rectifier bridge structure.
  • the rectifier bridge device is a bridge structure composed of six rectifier diodes, which uses the unidirectional conduction characteristics of the diode to rectify the alternating current. Since the bridge rectifier uses the input sine wave twice as efficiently as the wave rectification, it is A significant improvement in diode half-wave rectification is widely used in circuits where AC power is converted to DC.
  • the existing similar product structure is chip three-in-three-reverse placement, two long strip connection piece structure, mainly has the following drawbacks: the product structure is complex, it is difficult to achieve automation and less humanized production, the production process is highly dependent on manual operation, and the production efficiency is low. The material needs to be fed into the furnace together with the graphite ship during the welding process, and the energy utilization efficiency is low.
  • the object of the invention is to provide a high-power rectifier bridge structure, which is a frame-type structure, which minimizes the dependence on manual work from the process design, and the production artificial efficiency is improved by 8 to 10 times, and the lead wire is improved.
  • the frame utilization rate has been increased by 10%.
  • the graphite boat is not used in the welding process of the structure, which improves the energy utilization efficiency of the welding furnace.
  • a high-power rectifier bridge structure comprising: first, second, third, fourth, fifth, sixth poles covered by an epoxy package a tube chip, a T-shaped connecting piece, a first L-shaped connecting piece, a second L-shaped connecting piece, a first strip-shaped connecting piece and a second strip-shaped connecting piece, wherein the T-shaped connecting piece is located at the first L-shaped connecting piece, Between the second L-shaped connecting pieces, the first strip-shaped connecting piece and the second strip-shaped connecting piece are respectively located on two sides of the first L-shaped connecting piece and the second L-shaped connecting piece;
  • the pin areas at the respective ends of the T-shaped connecting piece, the first L-shaped connecting piece and the second L-shaped connecting piece respectively serve as an AC input terminal, and are located at the respective ends of the first strip-shaped connecting piece and the second strip-shaped connecting piece.
  • the zones serve as a positive input and a negative input, respectively.
  • the AC input terminal is located between the positive input terminal and the negative input terminal.
  • the high-power rectifier bridge structure of the invention is a frame-type structure, and the dependence on manual work is minimized from the process design, the production labor efficiency is improved by 8 to 10 times, and the lead frame utilization rate is increased by 10%, the structure
  • the graphite boat is not used in the welding process, which improves the energy efficiency of the welding furnace.
  • Figure 3 is a schematic view showing a partial structure of a high-power rectifier bridge structure of the present invention.
  • Embodiment 2 A high-power rectifier bridge structure, comprising: first, second, third, fourth, fifth, and sixth diode chips 2, 3, 4 covered by an epoxy package 1 5, 6, 7, T-shaped connecting piece 8, first L-shaped connecting piece 9, second L-shaped connecting piece 10, first strip-shaped connecting piece 11 and second strip-shaped connecting piece 12, said T-shaped connecting piece 8 is located between the first L-shaped connecting piece 9 and the second L-shaped connecting piece 10, wherein the first strip-shaped connecting piece 11 and the second strip-shaped connecting piece 12 are respectively located on the first L-shaped connecting piece 9 and the second L Both sides of the connecting piece 10;
  • the high-power rectifier bridge structure When the above-mentioned high-power rectifier bridge structure is adopted, it is a frame structure, and the dependence on manual work is minimized from the process design, the production labor efficiency is improved by 8 to 10 times, and the lead frame utilization rate is increased by 10%.
  • the graphite ship is not used in the structural welding process, which improves the energy efficiency of the welding furnace.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Rectifiers (AREA)

Abstract

一种大功率整流桥结构，包括：由环氧封装体（1）包覆的第一、第二、第三、第四、第五、第六二极管芯片（2、3、4、5、6、7）、T形连接片（8）、第一L形连接片（9）、第二L形连接片（10）、第一条形连接片（11）和第二条形连接片（12），T形连接片（8）位于第一L形连接片（9）、第二L形连接片（10）之间，第一条形连接片（11）、第二条形连接片（12）分别位于第一L形连接片（9）、第二L形连接片（10）两侧，第一、第三、第五二极管芯片（2、4、6）安装于第一条形连接片（11）的支撑区上，第二、第四、第六二极管芯片（3、5、7）分别安装于第一L形连接片（9）、第二L形连接片（10）和T形连接片（8）各自的支撑区。该大功率整流桥结构生产人工效率提升了8~10倍，引线框利用率提升了10%，该结构焊接过程中不使用石墨船，提升了焊接炉能源利用效率。

Description

大功率整流桥结构 技术领域
本发明涉及一种整流半导体器件，尤其涉及一种大功率整流桥结构。
背景技术
整流桥器件是由六个整流二极管组成的一个桥式结构，它利用二极管的单向导电特性对交流电进行整流，由于桥式整流器对输入正正弦波的利用效率比波整流高一倍，是对二极管半波整流的一种显著改进，故被广泛应用于交流电转换成直流电的电路中。
现有同类产品结构为芯片三正三反放置，两颗长条连接片结构，主要存在如下弊端：产品结构复杂，难以实现自动化少人化生产，生产工艺对手工作业依赖程度高，生产效率低，焊接过程中材料需要与石墨船一起进炉，能源利用效率低。
发明内容
本发明目的是提供一种大功率整流桥结构，该大功率整流桥结构为框架式结构，从工艺设计上最大限度的减少了对手工作业的依赖，生产人工效率提升了8～10倍，引线框利用率提升了10％，该结构焊接过程中不使用石墨船，提升了焊接炉能源利用效率。
为达到上述目的，本发明采用的技术方案是：一种大功率整流桥结构，包括：由环氧封装体包覆的第一、第二、第三、第四、第五、第六二极管芯片、T形连接片、第一L形连接片、第二L形连接片、第一条形连接片和第二条形连接片，所述T形连接片位于第一L形连接片、第二L形连接片之间，所述第一条形连接片、第二条形连接片分别位于第一L形连接片、第二L形连接片两侧；
所述第一、第三、第五二极管芯片安装于第一条形连接片的支撑区上，所述第二、第四、第六二极管芯片分别安装于第一L形连接片、第二L形连接片和T形连接片各自的支撑区；
一第一连接片连接第一二极管芯片和第一L形连接片，一第二连接片连接第二二极管芯片和第二条形连接片，一第三连接片连接第三二极管芯片和第二L 形连接片，一第四连接片连接第四二极管芯片和第二条形连接片，一第五连接片连接第五二极管芯片和T形连接片，一第六连接片连接第六二极管芯片和第二条形连接片；
位于T形连接片、第一L形连接片、第二L形连接片各自末端的引脚区分别作为交流输入端，位于第一条形连接片和第二条形连接片各自末端的引脚区分别作为正极输入端和负极输入端。
上述技术方案中进一步改进的方案如下：
上述方案中，所述交流输入端位于正极输入端和负极输入端之间。
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：
本发明大功率整流桥结构，其为框架式结构，从工艺设计上最大限度的减少了对手工作业的依赖，生产人工效率提升了8～10倍，引线框利用率提升了10％，该结构焊接过程中不使用石墨船，提升了焊接炉能源利用效率。
附图说明
附图1为现有整流桥器件结构示意图；
附图2为本发明大功率整流桥结构结构示意图；
附图3为本发明大功率整流桥结构局部结构示意图一；
附图4为本发明大功率整流桥结构局部结构示意图二。
以上附图中：1、环氧封装体；2、第一二极管芯片；3、第二二极管芯片；4、第三二极管芯片；5、第四二极管芯片；6、第五二极管芯片；7、第六二极管芯片；8、T形连接片；9、第一L形连接片；10、第二L形连接片；11、第一条形连接片；12、第二条形连接片；13、第一连接片；14、第二连接片；15、第三连接片；16、第四连接片；17、第五连接片；18、第六连接片。
具体实施方式
下面结合附图及实施例对本发明作进一步描述：
实施例1：一种大功率整流桥结构，包括：由环氧封装体1包覆的第一、第二、第三、第四、第五、第六二极管芯片2、3、4、5、6、7、T形连接片8、第一L形连接片9、第二L形连接片10、第一条形连接片11和第二条形连接片 12，所述T形连接片8位于第一L形连接片9、第二L形连接片10之间，所述第一条形连接片11、第二条形连接片12分别位于第一L形连接片9、第二L形连接片10两侧；
所述第一、第三、第五二极管芯片2、4、6安装于第一条形连接片11的支撑区上，所述第二、第四、第六二极管芯片3、5、7分别安装于第一L形连接片9、第二L形连接片10和T形连接片8各自的支撑区；
一第一连接片13连接第一二极管芯片2和第一L形连接片9，一第二连接片14连接第二二极管芯片3和第二条形连接片12，一第三连接片15连接第三二极管芯片4和第二L形连接片10，一第四连接片16连接第四二极管芯片5和第二条形连接片12，一第五连接片17连接第五二极管芯片6和T形连接片8，一第六连接片18连接第六二极管芯片7和第二条形连接片12；
位于T形连接片8、第一L形连接片9、第二L形连接片10各自末端的引脚区分别作为交流输入端，位于第一条形连接片11和第二条形连接片12各自末端的引脚区分别作为正极输入端和负极输入端。
实施例2：一种大功率整流桥结构，包括：由环氧封装体1包覆的第一、第二、第三、第四、第五、第六二极管芯片2、3、4、5、6、7、T形连接片8、第一L形连接片9、第二L形连接片10、第一条形连接片11和第二条形连接片12，所述T形连接片8位于第一L形连接片9、第二L形连接片10之间，所述第一条形连接片11、第二条形连接片12分别位于第一L形连接片9、第二L形连接片10两侧；
所述第一、第三、第五二极管芯片2、4、6安装于第一条形连接片11的支撑区上，所述第二、第四、第六二极管芯片3、5、7分别安装于第一L形连接片9、第二L形连接片10和T形连接片8各自的支撑区；
一第一连接片13连接第一二极管芯片2和第一L形连接片9，一第二连接片14连接第二二极管芯片3和第二条形连接片12，一第三连接片15连接第三二极管芯片4和第二L形连接片10，一第四连接片16连接第四二极管芯片5和第二条形连接片12，一第五连接片17连接第五二极管芯片6和T形连接片8， 一第六连接片18连接第六二极管芯片7和第二条形连接片12；
位于T形连接片8、第一L形连接片9、第二L形连接片10各自末端的引脚区分别作为交流输入端，位于第一条形连接片11和第二条形连接片12各自末端的引脚区分别作为正极输入端和负极输入端。
采用上述大功率整流桥结构时，其为框架式结构，从工艺设计上最大限度的减少了对手工作业的依赖，生产人工效率提升了8～10倍，引线框利用率提升了10％，该结构焊接过程中不使用石墨船，提升了焊接炉能源利用效率。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。

Claims (2)

  1. 一种大功率整流桥结构，其特征在于：包括：由环氧封装体(1)包覆的第一、第二、第三、第四、第五、第六二极管芯片(2、3、4、5、6、7)、T形连接片(8)、第一L形连接片(9)、第二L形连接片(10)、第一条形连接片(11)和第二条形连接片(12)，所述T形连接片(8)位于第一L形连接片(9)、第二L形连接片(10)之间，所述第一条形连接片(11)、第二条形连接片(12)分别位于第一L形连接片(9)、第二L形连接片(10)两侧；
    所述第一、第三、第五二极管芯片(2、4、6)安装于第一条形连接片(11)的支撑区上，所述第二、第四、第六二极管芯片(3、5、7)分别安装于第一L形连接片(9)、第二L形连接片(10)和T形连接片(8)各自的支撑区；
    一第一连接片(13)连接第一二极管芯片(2)和第一L形连接片(9)，一第二连接片(14)连接第二二极管芯片(3)和第二条形连接片(12)，一第三连接片(15)连接第三二极管芯片(4)和第二L形连接片(10)，一第四连接片(16)连接第四二极管芯片(5)和第二条形连接片(12)，一第五连接片(17)连接第五二极管芯片(6)和T形连接片(8)，一第六连接片(18)连接第六二极管芯片(7)和第二条形连接片(12)；
    位于T形连接片(8)、第一L形连接片(9)、第二L形连接片(10)各自末端的引脚区分别作为交流输入端，位于第一条形连接片(11)和第二条形连接片(12)各自末端的引脚区分别作为正极输入端和负极输入端。
  2. 根据权利要求1所述的大功率整流桥结构，其特征在于：所述交流输入端位于正极输入端和负极输入端之间。
PCT/CN2017/089463 2016-08-05 2017-06-22 大功率整流桥结构 WO2018024043A1 (zh)

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