WO2017024686A1 - 一种平面型整流二极管 - Google Patents

一种平面型整流二极管 Download PDF

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Publication number
WO2017024686A1
WO2017024686A1 PCT/CN2015/095043 CN2015095043W WO2017024686A1 WO 2017024686 A1 WO2017024686 A1 WO 2017024686A1 CN 2015095043 W CN2015095043 W CN 2015095043W WO 2017024686 A1 WO2017024686 A1 WO 2017024686A1
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WO
WIPO (PCT)
Prior art keywords
silicon dioxide
protective layer
anode lead
lead wire
dioxide protective
Prior art date
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PCT/CN2015/095043
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English (en)
French (fr)
Inventor
周明
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南通明芯微电子有限公司
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Publication date
Application filed by 南通明芯微电子有限公司 filed Critical 南通明芯微电子有限公司
Publication of WO2017024686A1 publication Critical patent/WO2017024686A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Definitions

  • the invention relates to a planar rectifier diode and belongs to the technical field of semiconductors.
  • Diode is one of the most commonly used electronic components. Its biggest characteristic is unidirectional conduction, that is, current can only flow from one direction of the diode.
  • the function of the diode is rectifier circuit, detection circuit, voltage regulator circuit, various modulation circuits. It is mainly composed of diodes. The principle is very simple. It is because of the invention of diodes and other components that we have the birth of our colorful electronic information world.
  • the planar rectifier diode of the present invention comprises an anode lead (1), a cathode lead (2), a silicon dioxide protective layer (3) and a PN junction (4), said anode lead (1) and a silicon dioxide protective layer (3) connected, the silicon dioxide protective layer (3) is connected to the PN junction (4), and the outer portions of the anode lead (1) and the cathode lead (2) are sequentially coated with an adhesive layer (5) and Copper-nickel alloy layer (6).
  • a positioning block (7) is disposed on the anode lead (1) and the cathode lead (2).
  • FIG. 1 is a schematic view showing the structure of a planar rectifier diode of the present invention.
  • 1 is an anode lead
  • 2 is a cathode lead
  • 3 is a silicon dioxide protective layer
  • 4 is a PN junction
  • 5 is an adhesive layer
  • 6 is a copper-nickel alloy layer
  • 7 is a positioning block.
  • the planar rectifier diode of the present invention comprises an anode lead (1), a cathode lead (2), a silicon dioxide protective layer (3) and a PN junction (4), and the anode lead (1) Connected to the silicon dioxide protective layer (3), the silicon dioxide protective layer (3) is connected to the PN junction (4), and the outer portions of the anode lead (1) and the cathode lead (2) are sequentially coated with glue.
  • a positioning block (7) is disposed on the anode lead (1) and the cathode lead (2).

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Rectifiers (AREA)

Abstract

本发明提供了一种平面型整流二极管，包括阳极引线(1)、阴极引线(2)、二氧化硅保护层(3)和PN结(4)，所述的阳极引线(1)与二氧化硅保护层(3)相连，所述的二氧化硅保护层(3)与PN结(4)相连，所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(5)和铜镍合金层(6)。本发明的平面型整流二极管具有如下技术效果：1)引脚不容易被折弯或折断；2)引脚在镶嵌时不容易插入过深，不会导致焊接不稳固。

Description

一种平面型整流二极管 技术领域
本发明涉及一种平面型整流二极管，属于半导体技术领域。
背景技术
二极管是最常用的电子元件之一，它最大的特性就是单向导电，也就是电流只可以从二极管的一个方向流过，二极管的作用有整流电路，检波电路，稳压电路，各种调制电路，主要都是由二极管来构成的，其原理都很简单，正是由于二极管等元件的发明，才有我们现在丰富多彩的电子信息世界的诞生。
现有的二极管存在如下不足之处：
1)引脚容易被折弯或折断；
2)引脚在镶嵌时容易插入过深，导致焊接不稳固。
这些不足之处都严重影响了二极管的使用寿命。
发明内容
本发明的目的是克服现有技术的不足之处，提供一种平面型整流二极管。
本发明的平面型整流二极管，包括阳极引线(1)、阴极引线(2)、二氧化硅保护层(3)和PN结(4)，所述的阳极引线(1)与二氧化硅保护层(3)相连，所述的二氧化硅保护层(3)与PN结(4)相连，所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(5)和铜镍合金层(6)。
优选地，
所述的阳极引线(1)和阴极引线(2)上设有定位块(7)。
本发明的平面型整流二极管具有如下技术效果：
1)引脚不容易被折弯或折断；
2)引脚在镶嵌时不容易插入过深，不会导致焊接不稳固。
附图说明
图1是本发明的平面型整流二极管的结构示意图。
其中，1为阳极引线，2为阴极引线，3为二氧化硅保护层，4为PN结，5为胶粘层，6为铜镍合金层，7为定位块。
具体实施方式
如图1所示，本发明的平面型整流二极管，包括阳极引线(1)、阴极引线(2)、二氧化硅保护层(3)和PN结(4)，所述的阳极引线(1)与二氧化硅保护层(3)相连，所述的二氧化硅保护层(3)与PN结(4)相连，所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(5)和铜镍合金层(6)。所述的阳极引线(1)和阴极引线(2)上设有定位块(7)。

Claims (2)

  1. 一种平面型整流二极管，包括阳极引线(1)、阴极引线(2)、二氧化硅保护层(3)和PN结(4)，所述的阳极引线(1)与二氧化硅保护层(3)相连，所述的二氧化硅保护层(3)与PN结(4)相连，其特征在于，所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(5)和铜镍合金层(6)。
  2. 根据权利要求1所述的平面型整流二极管，其特征在于，所述的阳极引线(1)和阴极引线(2)上设有定位块(7)。
PCT/CN2015/095043 2015-08-07 2015-11-19 一种平面型整流二极管 WO2017024686A1 (zh)

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CN201510479633.X 2015-08-07
CN201510479633.XA CN105023955A (zh) 2015-08-07 2015-08-07 一种平面型整流二极管

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Publication number Priority date Publication date Assignee Title
CN105023955A (zh) * 2015-08-07 2015-11-04 南通明芯微电子有限公司 一种平面型整流二极管
CN105655412A (zh) * 2016-03-30 2016-06-08 南通明芯微电子有限公司 一种肖特基二极管

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JP2001244273A (ja) * 2000-02-29 2001-09-07 Hitachi Ltd ダイオード及びその製造方法
EP1323194A1 (de) * 2000-09-11 2003-07-02 Siemens Aktiengesellschaft Organischer gleichrichter, schaltung, rfid-tag und verwendung eines organischen gleichrichters
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CN102709333A (zh) * 2012-06-16 2012-10-03 中国振华集团永光电子有限公司 低电容玻璃实体封装硅瞬态电压抑制二极管及其制造方法
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US6037653A (en) * 1997-03-25 2000-03-14 Samsung Aerospace Industries, Ltd. Semiconductor lead frame having multi-layered plating layer including copper-nickel plating layer
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CN104218071A (zh) * 2014-09-30 2014-12-17 夏洪贵 一种平面型二极管
CN204946909U (zh) * 2015-08-07 2016-01-06 南通明芯微电子有限公司 一种平面型整流二极管

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244273A (ja) * 2000-02-29 2001-09-07 Hitachi Ltd ダイオード及びその製造方法
EP1323194A1 (de) * 2000-09-11 2003-07-02 Siemens Aktiengesellschaft Organischer gleichrichter, schaltung, rfid-tag und verwendung eines organischen gleichrichters
CN102117840A (zh) * 2010-12-15 2011-07-06 杭州杭鑫电子工业有限公司 一种多重金属扩散快恢复二极管及其制备方法
CN102709333A (zh) * 2012-06-16 2012-10-03 中国振华集团永光电子有限公司 低电容玻璃实体封装硅瞬态电压抑制二极管及其制造方法
CN105023955A (zh) * 2015-08-07 2015-11-04 南通明芯微电子有限公司 一种平面型整流二极管

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