CN105023955A - 一种平面型整流二极管 - Google Patents

一种平面型整流二极管 Download PDF

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Publication number
CN105023955A
CN105023955A CN201510479633.XA CN201510479633A CN105023955A CN 105023955 A CN105023955 A CN 105023955A CN 201510479633 A CN201510479633 A CN 201510479633A CN 105023955 A CN105023955 A CN 105023955A
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China
Prior art keywords
silicon dioxide
leading wire
junction
rectification diode
layer
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Pending
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CN201510479633.XA
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English (en)
Inventor
周明
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NANTONG MINGXIN MICROELECTRONICS CO Ltd
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NANTONG MINGXIN MICROELECTRONICS CO Ltd
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Application filed by NANTONG MINGXIN MICROELECTRONICS CO Ltd filed Critical NANTONG MINGXIN MICROELECTRONICS CO Ltd
Priority to CN201510479633.XA priority Critical patent/CN105023955A/zh
Publication of CN105023955A publication Critical patent/CN105023955A/zh
Priority to PCT/CN2015/095043 priority patent/WO2017024686A1/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Rectifiers (AREA)

Abstract

本发明提供了一种平面型整流二极管，包括阳极引线（1）、阴极引线（2）、二氧化硅保护层（3）和PN结（4），所述的阳极引线（1）与二氧化硅保护层（3）相连，所述的二氧化硅保护层（3）与PN结（4）相连，所述的阳极引线（1）和阴极引线（2）的外部依次覆有胶粘层（5）和铜镍合金层（6）。本发明的平面型整流二极管具有如下技术效果：1）引脚不容易被折弯或折断；2）引脚在镶嵌时不容易插入过深，不会导致焊接不稳固。

Description

一种平面型整流二极管
技术领域
    本发明涉及一种平面型整流二极管，属于半导体技术领域。
背景技术
    二极管是最常用的电子元件之一，它最大的特性就是单向导电，也就是电流只可以从二极管的一个方向流过，二极管的作用有整流电路，检波电路，稳压电路，各种调制电路，主要都是由二极管来构成的，其原理都很简单，正是由于二极管等元件的发明，才有我们现在丰富多彩的电子信息世界的诞生。
    现有的二极管存在如下不足之处：
    1）引脚容易被折弯或折断；
2）引脚在镶嵌时容易插入过深，导致焊接不稳固。
    这些不足之处都严重影响了二极管的使用寿命。
发明内容
    本发明的目的是克服现有技术的不足之处，提供一种平面型整流二极管。
    本发明的平面型整流二极管，包括阳极引线（1）、阴极引线（2）、二氧化硅保护层（3）和PN结（4），所述的阳极引线（1）与二氧化硅保护层（3）相连，所述的二氧化硅保护层（3）与PN结（4）相连，所述的阳极引线（1）和阴极引线（2）的外部依次覆有胶粘层（5）和铜镍合金层（6）。
    优选地，
    所述的阳极引线（1）和阴极引线（2）上设有定位块(7)。
    本发明的平面型整流二极管具有如下技术效果：
    1）引脚不容易被折弯或折断；
2）引脚在镶嵌时不容易插入过深，不会导致焊接不稳固。
附图说明
图1是本发明的平面型整流二极管的结构示意图。
其中，1为阳极引线，2为阴极引线，3为二氧化硅保护层，4为PN结，5为胶粘层，6为铜镍合金层，7为定位块。
具体实施方式
     如图1所示，本发明的平面型整流二极管，包括阳极引线（1）、阴极引线（2）、二氧化硅保护层（3）和PN结（4），所述的阳极引线（1）与二氧化硅保护层（3）相连，所述的二氧化硅保护层（3）与PN结（4）相连，所述的阳极引线（1）和阴极引线（2）的外部依次覆有胶粘层（5）和铜镍合金层（6）。所述的阳极引线（1）和阴极引线（2）上设有定位块(7)。

Claims (2)

1.一种平面型整流二极管，包括阳极引线（1）、阴极引线（2）、二氧化硅保护层（3）和PN结（4），所述的阳极引线（1）与二氧化硅保护层（3）相连，所述的二氧化硅保护层（3）与PN结（4）相连，其特征在于，所述的阳极引线（1）和阴极引线（2）的外部依次覆有胶粘层（5）和铜镍合金层（6）。
2.根据权利要求1所述的平面型整流二极管，其特征在于，所述的阳极引线（1）和阴极引线（2）上设有定位块(7)。
CN201510479633.XA 2015-08-07 2015-08-07 一种平面型整流二极管 Pending CN105023955A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201510479633.XA CN105023955A (zh) 2015-08-07 2015-08-07 一种平面型整流二极管
PCT/CN2015/095043 WO2017024686A1 (zh) 2015-08-07 2015-11-19 一种平面型整流二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510479633.XA CN105023955A (zh) 2015-08-07 2015-08-07 一种平面型整流二极管

Publications (1)

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CN105023955A true CN105023955A (zh) 2015-11-04

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CN (1) CN105023955A (zh)
WO (1) WO2017024686A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655412A (zh) * 2016-03-30 2016-06-08 南通明芯微电子有限公司 一种肖特基二极管
WO2017024686A1 (zh) * 2015-08-07 2017-02-16 南通明芯微电子有限公司 一种平面型整流二极管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240147A (ja) * 1984-05-14 1985-11-29 Nec Corp 半導体装置
CN1194463A (zh) * 1997-03-25 1998-09-30 三星航空产业株式会社 具有多层镀层的半导体引线框架及其制造方法
CN202094127U (zh) * 2011-05-31 2011-12-28 常州佳讯光电产业发展有限公司 新型三角片二极管
CN104218071A (zh) * 2014-09-30 2014-12-17 夏洪贵 一种平面型二极管
CN204946909U (zh) * 2015-08-07 2016-01-06 南通明芯微电子有限公司 一种平面型整流二极管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001244273A (ja) * 2000-02-29 2001-09-07 Hitachi Ltd ダイオード及びその製造方法
DE10044842A1 (de) * 2000-09-11 2002-04-04 Siemens Ag Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters
CN102117840B (zh) * 2010-12-15 2012-04-25 杭州杭鑫电子工业有限公司 一种多重金属扩散快恢复二极管及其制备方法
CN102709333B (zh) * 2012-06-16 2014-11-12 中国振华集团永光电子有限公司 低电容玻璃实体封装硅瞬态电压抑制二极管的制造方法
CN105023955A (zh) * 2015-08-07 2015-11-04 南通明芯微电子有限公司 一种平面型整流二极管

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240147A (ja) * 1984-05-14 1985-11-29 Nec Corp 半導体装置
CN1194463A (zh) * 1997-03-25 1998-09-30 三星航空产业株式会社 具有多层镀层的半导体引线框架及其制造方法
CN202094127U (zh) * 2011-05-31 2011-12-28 常州佳讯光电产业发展有限公司 新型三角片二极管
CN104218071A (zh) * 2014-09-30 2014-12-17 夏洪贵 一种平面型二极管
CN204946909U (zh) * 2015-08-07 2016-01-06 南通明芯微电子有限公司 一种平面型整流二极管

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017024686A1 (zh) * 2015-08-07 2017-02-16 南通明芯微电子有限公司 一种平面型整流二极管
CN105655412A (zh) * 2016-03-30 2016-06-08 南通明芯微电子有限公司 一种肖特基二极管

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Application publication date: 20151104