CN105023954A - 一种面接触型整流二极管 - Google Patents

一种面接触型整流二极管 Download PDF

Info

Publication number
CN105023954A
CN105023954A CN201510478994.2A CN201510478994A CN105023954A CN 105023954 A CN105023954 A CN 105023954A CN 201510478994 A CN201510478994 A CN 201510478994A CN 105023954 A CN105023954 A CN 105023954A
Authority
CN
China
Prior art keywords
junction
silicon
aluminum alloy
type crystal
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510478994.2A
Other languages
English (en)
Inventor
周明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NANTONG MINGXIN MICROELECTRONICS CO Ltd
Original Assignee
NANTONG MINGXIN MICROELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NANTONG MINGXIN MICROELECTRONICS CO Ltd filed Critical NANTONG MINGXIN MICROELECTRONICS CO Ltd
Priority to CN201510478994.2A priority Critical patent/CN105023954A/zh
Publication of CN105023954A publication Critical patent/CN105023954A/zh
Priority to PCT/CN2015/095042 priority patent/WO2017024685A1/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

本发明提供了一种面接触型整流二极管,包括阳极引线(1)、阴极引线(2)、铝合金电极(3)、PN结(4)、硅N型晶体(5)、金锑合金层(6)和支架(7),所述的阳极引线(1)与铝合金电极(3)相连,所述的铝合金电极(3)与PN结(4)相连,所述的PN结(4)与硅N型晶体(5)相连,所述的硅N型晶体(5)与金锑合金层(6)相连,所述的金锑合金层(6)连在支架(7)上,所述的阴极引线(2)也连在支架(7)上,所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(8)和铜镍合金层(9)。本发明具有如下技术效果:1)引脚不容易被折弯或折断;2)引脚在镶嵌时不容易插入过深,不会导致焊接不稳固。<b />

Description

一种面接触型整流二极管
技术领域
    本发明涉及一种面接触型整流二极管,属于半导体技术领域。
背景技术
    二极管是最常用的电子元件之一,它最大的特性就是单向导电,也就是电流只可以从二极管的一个方向流过,二极管的作用有整流电路,检波电路,稳压电路,各种调制电路,主要都是由二极管来构成的,其原理都很简单,正是由于二极管等元件的发明,才有我们现在丰富多彩的电子信息世界的诞生。
    现有的二极管存在如下不足之处:
    1)引脚容易被折弯或折断;
2)引脚在镶嵌时容易插入过深,导致焊接不稳固。
    这些不足之处都严重影响了二极管的使用寿命。
发明内容
    本发明的目的是克服现有技术的不足之处,提供一种面接触型整流二极管。
    本发明的面接触型整流二极管,包括阳极引线(1)、阴极引线(2)、铝合金电极(3)、PN结(4)、硅N型晶体(5)、金锑合金层(6)和支架(7),所述的阳极引线(1)与铝合金电极(3)相连,所述的铝合金电极(3)与PN结(4)相连,所述的PN结(4)与硅N型晶体(5)相连,所述的硅N型晶体(5)与金锑合金层(6)相连,所述的金锑合金层(6)连在支架(7)上,所述的阴极引线(2)也连在支架(7)上,所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(8)和铜镍合金层(9)。
    优选地,
    所述的阳极引线(1)和阴极引线(2)上设有定位块(10)。
    本发明的面接触型整流二极管具有如下技术效果:
    1)引脚不容易被折弯或折断;
2)引脚在镶嵌时不容易插入过深,不会导致焊接不稳固。
附图说明
图1是本发明的面接触型整流二极管的结构示意图。
其中,1为阳极引线,2为阴极引线,3为铝合金电极,4为PN结,5为硅N型晶体,6为金锑合金层,7为支架,8为胶粘层,9为铜镍合金层,10为定位块。
具体实施方式
     如图1所示,本发明的面接触型整流二极管,包括阳极引线(1)、阴极引线(2)、铝合金电极(3)、PN结(4)、硅N型晶体(5)、金锑合金层(6)和支架(7),所述的阳极引线(1)与铝合金电极(3)相连,所述的铝合金电极(3)与PN结(4)相连,所述的PN结(4)与硅N型晶体(5)相连,所述的硅N型晶体(5)与金锑合金层(6)相连,所述的金锑合金层(6)连在支架(7)上,所述的阴极引线(2)也连在支架(7)上,所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(8)和铜镍合金层(9)。所述的阳极引线(1)和阴极引线(2)上设有定位块(10)。

Claims (2)

1.一种面接触型整流二极管,包括阳极引线(1)、阴极引线(2)、铝合金电极(3)、PN结(4)、硅N型晶体(5)、金锑合金层(6)和支架(7),所述的阳极引线(1)与铝合金电极(3)相连,所述的铝合金电极(3)与PN结(4)相连,所述的PN结(4)与硅N型晶体(5)相连,所述的硅N型晶体(5)与金锑合金层(6)相连,所述的金锑合金层(6)连在支架(7)上,所述的阴极引线(2)也连在支架(7)上,其特征在于,所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(8)和铜镍合金层(9)。
2.根据权利要求1所述的面接触型整流二极管,其特征在于,所述的阳极引线(1)和阴极引线(2)上设有定位块(10)。
CN201510478994.2A 2015-08-07 2015-08-07 一种面接触型整流二极管 Pending CN105023954A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201510478994.2A CN105023954A (zh) 2015-08-07 2015-08-07 一种面接触型整流二极管
PCT/CN2015/095042 WO2017024685A1 (zh) 2015-08-07 2015-11-19 一种面接触型整流二极管

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510478994.2A CN105023954A (zh) 2015-08-07 2015-08-07 一种面接触型整流二极管

Publications (1)

Publication Number Publication Date
CN105023954A true CN105023954A (zh) 2015-11-04

Family

ID=54413780

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510478994.2A Pending CN105023954A (zh) 2015-08-07 2015-08-07 一种面接触型整流二极管

Country Status (2)

Country Link
CN (1) CN105023954A (zh)
WO (1) WO2017024685A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017024685A1 (zh) * 2015-08-07 2017-02-16 南通明芯微电子有限公司 一种面接触型整流二极管
CN107623045A (zh) * 2017-09-30 2018-01-23 绍兴上虞欧菲光电科技有限公司 一种二极管
CN112582280A (zh) * 2020-12-10 2021-03-30 深圳市冠禹半导体有限公司 一种半导体器件的制备方法和半导体器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240147A (ja) * 1984-05-14 1985-11-29 Nec Corp 半導体装置
CN1194463A (zh) * 1997-03-25 1998-09-30 三星航空产业株式会社 具有多层镀层的半导体引线框架及其制造方法
CN202094127U (zh) * 2011-05-31 2011-12-28 常州佳讯光电产业发展有限公司 新型三角片二极管
CN104218072A (zh) * 2014-09-30 2014-12-17 夏洪贵 一种面接触型二极管
CN204927299U (zh) * 2015-08-07 2015-12-30 南通明芯微电子有限公司 一种面接触型整流二极管

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102446977B (zh) * 2010-12-23 2013-12-11 南通星河电子有限公司 一种轴向整流二极管
CN203503695U (zh) * 2013-09-27 2014-03-26 长兴科迪光电有限公司 一种直插式led的新式结构
CN104659111A (zh) * 2015-02-11 2015-05-27 中国振华集团永光电子有限公司(国营第八七三厂) 一种微型玻璃钝化封装整流二极管
CN105023954A (zh) * 2015-08-07 2015-11-04 南通明芯微电子有限公司 一种面接触型整流二极管

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240147A (ja) * 1984-05-14 1985-11-29 Nec Corp 半導体装置
CN1194463A (zh) * 1997-03-25 1998-09-30 三星航空产业株式会社 具有多层镀层的半导体引线框架及其制造方法
CN202094127U (zh) * 2011-05-31 2011-12-28 常州佳讯光电产业发展有限公司 新型三角片二极管
CN104218072A (zh) * 2014-09-30 2014-12-17 夏洪贵 一种面接触型二极管
CN204927299U (zh) * 2015-08-07 2015-12-30 南通明芯微电子有限公司 一种面接触型整流二极管

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017024685A1 (zh) * 2015-08-07 2017-02-16 南通明芯微电子有限公司 一种面接触型整流二极管
CN107623045A (zh) * 2017-09-30 2018-01-23 绍兴上虞欧菲光电科技有限公司 一种二极管
CN112582280A (zh) * 2020-12-10 2021-03-30 深圳市冠禹半导体有限公司 一种半导体器件的制备方法和半导体器件
CN112582280B (zh) * 2020-12-10 2021-07-30 深圳市冠禹半导体有限公司 一种半导体器件的制备装置

Also Published As

Publication number Publication date
WO2017024685A1 (zh) 2017-02-16

Similar Documents

Publication Publication Date Title
EP2787542A3 (en) Light emitting diode
CN105023954A (zh) 一种面接触型整流二极管
TW200618349A (en) Transparent electrode for semiconductor light-emitting device
CN103325759B (zh) 半导体模块
CN104733598A (zh) 半导体发光结构及半导体封装结构
EP3035384A3 (en) Power semiconductor package having reduced form factor and increased current carrying capability
PH22016000060Y1 (en) A packaging structure for a laser diode
CN105006491A (zh) 一种点接触型整流二极管
CN204834632U (zh) 一种点接触型整流二极管
CN204927299U (zh) 一种面接触型整流二极管
CN105023955A (zh) 一种平面型整流二极管
CN204946909U (zh) 一种平面型整流二极管
CN209150121U (zh) 一种快恢复二极管
CN207381409U (zh) 倒置栅极结构的功率mosfet
CN213752680U (zh) 一种引脚可调的肖特基整流管
CN204946941U (zh) 一种发光二极管
CN204966489U (zh) 超薄型贴片式整流器
CN203733805U (zh) 低功耗整流器件
CN205582914U (zh) 一种新型整流桥封装
CN203733806U (zh) 轴向型贴片二极管器件
CN205159312U (zh) 平面二极管的快速安装结构
CN205723499U (zh) 抗浪涌型表面贴装半导体器件
CN203733807U (zh) 高可靠性表面贴装二极管
CN203733808U (zh) 整流二极管器件
CN203071080U (zh) 具有温度补偿的二极管元件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: 226600, Jiangsu province Nantong city Haian county old dam Town Industrial Park

Applicant after: Jiangsu Ming core microelectronic Limited by Share Ltd

Address before: 226600 Jiangsu city of Nantong province Haian County Binhai port old dam old dam District Town Industrial Park

Applicant before: Nantong Mingxin Microelectronics Co., Ltd.

CB02 Change of applicant information
RJ01 Rejection of invention patent application after publication

Application publication date: 20151104

RJ01 Rejection of invention patent application after publication