CN105006491A - 一种点接触型整流二极管 - Google Patents

一种点接触型整流二极管 Download PDF

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Publication number
CN105006491A
CN105006491A CN201510478992.3A CN201510478992A CN105006491A CN 105006491 A CN105006491 A CN 105006491A CN 201510478992 A CN201510478992 A CN 201510478992A CN 105006491 A CN105006491 A CN 105006491A
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China
Prior art keywords
junction
rectifier diode
lead wire
type germanium
contact type
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CN201510478992.3A
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English (en)
Inventor
周明
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NANTONG MINGXIN MICROELECTRONICS CO Ltd
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NANTONG MINGXIN MICROELECTRONICS CO Ltd
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Priority to CN201510478992.3A priority Critical patent/CN105006491A/zh
Publication of CN105006491A publication Critical patent/CN105006491A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/862—Point contact diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8613—Mesa PN junction diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

本发明提供了一种点接触型整流二极管，包括阳极引线（1）、阴极引线（2）、PN结（3）、N型锗片（4）、支架（5）、金属触丝（6）和外壳（7），所述的阳极引线（1）和N型锗片（4）连在金属触丝（6）的两端，所述的N型锗片（4）和支架（5）连在PN结（3）的两端，所述的阴极引线（2）与支架（5）相连，所述的PN结（3）、N型锗片（4）、支架（5）和金属触丝（6）均设在外壳（7）内，所述的阳极引线（1）和阴极引线（2）的外部依次覆有胶粘层（8）和铜镍合金层（9）。本发明的点接触型整流二极管具有如下技术效果：1）引脚不容易被折弯或折断；2）引脚在镶嵌时不容易插入过深，不会导致焊接不稳固。

Description

一种点接触型整流二极管
技术领域
    本发明涉及一种点接触型整流二极管，属于半导体技术领域。
背景技术
二极管是最常用的电子元件之一，它最大的特性就是单向导电，也就是电流只可以从二极管的一个方向流过，二极管的作用有整流电路，检波电路，稳压电路，各种调制电路，主要都是由二极管来构成的，其原理都很简单，正是由于二极管等元件的发明，才有我们现在丰富多彩的电子信息世界的诞生。
现有的二极管存在如下不足之处：
    1）引脚容易被折弯或折断；
2）引脚在镶嵌时容易插入过深，导致焊接不稳固。
    这些不足之处都严重影响了二极管的使用寿命。
发明内容
    本发明的目的是克服现有技术的不足之处，提供一种点接触型整流二极管。
    本发明的点接触型整流二极管，包括阳极引线（1）、阴极引线（2）、PN结（3）、N型锗片（4）、支架（5）、金属触丝（6）和外壳（7），所述的阳极引线（1）和N型锗片（4）连在金属触丝（6）的两端，所述的N型锗片（4）和支架（5）连在PN结（3）的两端，所述的阴极引线（2）与支架（5）相连，所述的PN结（3）、N型锗片（4）、支架（5）和金属触丝（6）均设在外壳（7）内，所述的阳极引线（1）和阴极引线（2）的外部依次覆有胶粘层（8）和铜镍合金层（9）。
    优选地，
    所述的阳极引线（1）和阴极引线（2）上设有定位块（10）。
    本发明的点接触型整流二极管具有如下技术效果：
    1）引脚不容易被折弯或折断；
2）引脚在镶嵌时不容易插入过深，不会导致焊接不稳固。
附图说明
图1是本发明的点接触型整流二极管的结构示意图。
其中，1为阳极引线，2为阴极引线，3为PN结，4为N型锗片，5为支架，6为金属触丝，7为外壳，8为胶粘层，9为铜镍合金层，10为定位块。
具体实施方式
如图1所示，本发明的点接触型整流二极管，包括阳极引线（1）、阴极引线（2）、PN结（3）、N型锗片（4）、支架（5）、金属触丝（6）和外壳（7），所述的阳极引线（1）和N型锗片（4）连在金属触丝（6）的两端，所述的N型锗片（4）和支架（5）连在PN结（3）的两端，所述的阴极引线（2）与支架（5）相连，所述的PN结（3）、N型锗片（4）、支架（5）和金属触丝（6）均设在外壳（7）内，所述的阳极引线（1）和阴极引线（2）的外部依次覆有胶粘层（8）和铜镍合金层（9）。所述的阳极引线（1）和阴极引线（2）上设有定位块（10）。

Claims (2)

1.一种点接触型整流二极管，包括阳极引线（1）、阴极引线（2）、PN结（3）、N型锗片（4）、支架（5）、金属触丝（6）和外壳（7），所述的阳极引线（1）和N型锗片（4）连在金属触丝（6）的两端，所述的N型锗片（4）和支架（5）连在PN结（3）的两端，所述的阴极引线（2）与支架（5）相连，所述的PN结（3）、N型锗片（4）、支架（5）和金属触丝（6）均设在外壳（7）内，其特征在于，所述的阳极引线（1）和阴极引线（2）的外部依次覆有胶粘层（8）和铜镍合金层（9）。
2. 根据权利要求1所述的点接触型整流二极管，其特征在于，所述的阳极引线（1）和阴极引线（2）上设有定位块（10）。
CN201510478992.3A 2015-08-07 2015-08-07 一种点接触型整流二极管 Pending CN105006491A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655412A (zh) * 2016-03-30 2016-06-08 南通明芯微电子有限公司 一种肖特基二极管
CN105762126A (zh) * 2016-03-30 2016-07-13 南通明芯微电子有限公司 一种激光二极管
CN112510098A (zh) * 2020-12-22 2021-03-16 昆山晨伊半导体有限公司 一种高效大功率轴向型二极管及电子设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240147A (ja) * 1984-05-14 1985-11-29 Nec Corp 半導体装置
CN201570498U (zh) * 2009-03-24 2010-09-01 徐州奥尼克电气有限公司 单臂桥式汽车整流二极管
CN204045599U (zh) * 2014-09-04 2014-12-24 山东沂光电子股份有限公司 一种双芯片高反压塑封功率二极管
CN104241399A (zh) * 2014-09-30 2014-12-24 夏洪贵 一种点接触型二极管
CN204834632U (zh) * 2015-08-07 2015-12-02 南通明芯微电子有限公司 一种点接触型整流二极管

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240147A (ja) * 1984-05-14 1985-11-29 Nec Corp 半導体装置
CN201570498U (zh) * 2009-03-24 2010-09-01 徐州奥尼克电气有限公司 单臂桥式汽车整流二极管
CN204045599U (zh) * 2014-09-04 2014-12-24 山东沂光电子股份有限公司 一种双芯片高反压塑封功率二极管
CN104241399A (zh) * 2014-09-30 2014-12-24 夏洪贵 一种点接触型二极管
CN204834632U (zh) * 2015-08-07 2015-12-02 南通明芯微电子有限公司 一种点接触型整流二极管

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105655412A (zh) * 2016-03-30 2016-06-08 南通明芯微电子有限公司 一种肖特基二极管
CN105762126A (zh) * 2016-03-30 2016-07-13 南通明芯微电子有限公司 一种激光二极管
CN112510098A (zh) * 2020-12-22 2021-03-16 昆山晨伊半导体有限公司 一种高效大功率轴向型二极管及电子设备

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