CN201479030U - 薄型三相桥式整流器 - Google Patents

薄型三相桥式整流器 Download PDF

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CN201479030U
CN201479030U CN200920234119XU CN200920234119U CN201479030U CN 201479030 U CN201479030 U CN 201479030U CN 200920234119X U CN200920234119X U CN 200920234119XU CN 200920234119 U CN200920234119 U CN 200920234119U CN 201479030 U CN201479030 U CN 201479030U
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backlight unit
diode chip
circuit board
welding
phase bridge
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吴念博
李志军
葛永明
刘玉龙
何耀喜
邹锋
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Suzhou Good Ark Electronics Co Ltd
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    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
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    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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Abstract

一种薄型三相桥式整流器，包括：电路板、用于支持该电路板的基板、六个二极管芯片、六个连接片、五个接线端子，该电路板上表面印有三相桥式电路的金属层，六个二极管芯片各自的N极与所述电路板的金属层焊接，该六个二极管芯片各自的P极与所述六个连接片另一端焊接，所述接线端子与所述金属层的连接处由环氧封装体固定，二极管芯片与电路板和连接片的连接处由硅胶封装体固定，该硅胶上表面覆盖环氧封装体，这样的结构设计省去了铜粒，且降低封装体的厚度，从而降低了整流器的整体厚度，同时简化了生产工艺。

Description

薄型三相桥式整流器
技术领域
本实用新型涉及一种整流器，具体涉及一种三相桥式整流器。
背景技术
三相桥式整流器是主要由六个二极管组成桥式结构的整流器，它利用二极管的单向导电特性对交流电进行整流，三相桥式整流器可实现对输入三相交流电的全波整流作用，故被广泛应用于交流电转换成直流电的电路中，例如：直流电源、直流电机、开关电源、电焊机、电池充电、PWM变频器整流等。
现有的三相桥式整流器，采用将二极管芯片的P极与电路板连接，由于二极管芯片的P极表面存在凸状钝化保护层，往往采用铜粒垫高二极管芯片，导致了三相桥式整流器的厚度大且工艺步骤较多，其次，为了减少应力，采用硅胶封装整流器的电路板区域，从而现有硅胶封装区覆盖了接线端子，如附图5所示，为了承受电气连接的安装扭力，往往需要增加环氧封装体的高度，因此，现有三相桥式整流器的厚度高达30mm，但随着电子产品向小型化方向发展，要求半导体电子器件的外形做得又小又薄，且与三相桥式整流器配合使用的绝缘栅双极型晶体管IGBT产品已向薄型发展，目前厚度已达17mm，因此，存在三相桥式整流器厚度大的瓶颈。
发明内容
本发明目的是提供一种薄型三相桥式整流器，其目的是要解决现有三相桥式整流器厚度大的技术问题。
为达到上述目的，本实用新型采用的技术方案是：
一种薄型三相桥式整流器，包括：电路板、用于支撑该电路板的基板、六个二极管芯片、六个连接片、五个接线端子，该电路板上表面印有三相桥式电路的金属层，所述六个连接片一端与该金属层焊接，所述六个二极管芯片均为N型衬底，五个接线端子一端与所述金属层焊接，五个接线端子另一端中有三个接线端子做为该整流器的输入端，其余两个接线端子做为该整流器的输出端，所述六个二极管芯片各自的N极与所述电路板的金属层焊接，该六个二极管芯片各自的P极分别与所述六个连接片另一端焊接，所述五个接线端子与所述金属层的连接处由环氧封装体固定，所述六个二极管芯片与所述电路板的金属层和所述六个连接片的连接处由硅胶封装体固定，该硅胶封装体上表面覆盖环氧封装体。
本实用新型的设计构思是：本实用新型采用将二极管芯片的P极与连接片焊接，省去了铜粒，且接线端子区由环氧封装，有效的降低了三相桥式整流器的厚度，同时简化了生产工艺。
由于上述技术方案运用，本实用新型与现有技术相比具有下列优点：
1、本实用新型将二极管芯片的P极与连接片焊接，省去了铜粒，从而减少了占用空间，为整机缩小体积创造条件，满足与绝缘栅双极型晶体管IGBT配合使用和其他有高度要求的场合。
2、本实用新型电路板上二极管区由硅胶封装，接线端子区由环氧封装，从而增加接线端子的安装扭力，便于减小封装厚度。
3、本实用新型简化了生产工艺且节省原料用量，从而降低了成本。
附图说明
附图1为本实用新型电路原理示意图；
附图2为本实用新型垂直方向结构示意图；
附图3为本实用新型结构立体图；
附图4为本实用新型器印有三相桥式电路的金属层示意图；
附图5为现有封装结构示意图；
附图6为本实用新型封装结构示意图。
以上附图中：1、电路板；2、基板；3、第一二极管芯片；4、第二二极管芯片；5、第三二极管芯片；6、第四二极管芯片；7、第五二极管芯片；8、第六二极管芯片；9、第一连接片；10、第二连接片；11、第三连接片；12、第四连接片；13、第五连接片；14、第六连接片；15、第一接线端子；16、第二接线端子；17、第三接线端子；18、第四接线端子；19、第五接线端子；20、金属层；21、绝缘层；22、焊片；23、P极；24、N极；25、钝化保护层；26、第一导电区；27、第二导电区；28、第三导电区；29、第四导电区；30、第五导电区；31、硅胶封装体；32、环氧封装体。
具体实施方式
下面结合附图及实施例对本发明作进一步描述：
实施例：一种薄型三相桥式整流器
如附图2、3所示，该整流器的环氧封装体内部由电路板1、六个二极管芯片、六个连接片、五个接线端子、基板2组成，电路板1位于基板2上，电路板1中设有绝缘层21和金属层20，该金属层20上具有五个导电区，所述六个二极管芯片均为N型衬底。
如附图1、4所示，第一二极管芯片3的N极24与第一导电区26焊接，该焊接通过使用焊片22将第一二极管芯片3的N极24与第一导电区26连接在一起，形成导电通路；第一二极管芯片3的P极23与第一连接片9一端焊接，该焊接方式通过使用焊片22将第一二极管芯片3的P极23与第一连接片9连接在一起，第一连接片9一端焊接位置为钝化保护层25内侧的第一二极管芯片3的P极23，第一连接片9另一端与第三导电区28焊接；第二二极管芯片4的N极24与第三导电区28焊接，第二二极管芯片4的P极23与第二连接片10一端焊接，第二连接片10另一端与第二导电区27焊接，构成第一支路。
第三二极管芯片5的N极与第一导电区26焊接，第三二极管芯片5的P极与第三连接片11一端焊接，第三连接片11另一端与第四导电区29焊接；第四二极管芯片6的N极与第四导电区29焊接，第四二极管芯片6的P极与第四连接片12一端焊接，第四连接片12另一端与第二导电区27焊接，构成第二支路。
第五二极管芯片7的N极与第一导电区26焊接，第五二极管芯片7的P极与第五连接片13一端焊接，第五连接片13另一端与第五导电区30焊接，第六二极管芯片8的N极与第五导电区30焊接，第六二极管芯片8的P极与第六连接片14一端焊接，第六连接片14另一端与第二导电区27焊接，构成第三支路。
第一接线端子15与第五导电区30焊接，第二接线端子16与第三导电区28焊接，第三接线端子17与第四导电区29焊接，第四接线端子18与第二导电区27焊接，第五接线端子19与第一导电区26焊接，其中，第一接线端子15、第二接线端子16和第三接线端子17分别从环氧封装体中引出并作为三相交流电的三个输入端，第四接线端子18和第五接线端子19分别从环氧封装体中引出并作为整流的负极端和正极端。
如附图6所示，五个接线端子15、16、17、18、19与所述金属层20的连接处由环氧封装体32固定，所述六个二极管芯片3、4、5、6、7、8与所述电路板1的金属层20和所述六个连接片9、10、11、12、13、14的连接处由硅胶封装体31固定，该硅胶封装体31上表面覆盖环氧封装体32。
上述实施例只为说明本实用新型的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施，并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰，都应涵盖在本实用新型的保护范围之内。

Claims (1)

1.一种薄型三相桥式整流器，包括：电路板(1)、用于支撑电路板(1)的基板(2)、六个二极管芯片(3、4、5、6、7、8)、六个连接片(9、10、11、12、13、14)、五个接线端子(15、16、17、18、19)，该电路板(1)上表面印有三相桥式电路的金属层(20)，所述六个二极管芯片均为N型衬底，所述六个连接片一端与该金属层(20)焊接，所述五个接线端子一端与所述金属层(20)焊接，五个接线端子另一端中有三个接线端子(15、16、17)做为该整流器的输入端，其余两个接线端子(18、19)做为该整流器的输出端，其特征在于：所述六个二极管芯片各自的N极与所述电路板(1)的金属层(20)焊接，该六个二极管芯片各自的P极分别与所述六个连接片另一端焊接，所述五个接线端子(15、16、17、18、19)与所述金属层(20)的连接处由环氧封装体(32)固定，所述六个二极管芯片(3、4、5、6、7、8)与所述电路板(1)的金属层(20)和所述六个连接片(9、10、11、12、13、14)的连接处由硅胶封装体(31)固定，该硅胶封装体(31)上表面覆盖环氧封装体(32)。
CN200920234119XU 2009-07-30 2009-07-30 薄型三相桥式整流器 Expired - Fee Related CN201479030U (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103795272A (zh) * 2014-01-25 2014-05-14 嘉兴斯达半导体股份有限公司 一种三相整流桥功率模块
CN106449586A (zh) * 2016-08-05 2017-02-22 苏州固锝电子股份有限公司 大功率整流桥结构
CN109494210A (zh) * 2018-12-25 2019-03-19 山东晶导微电子股份有限公司 一种半桥封装结构
CN111884528A (zh) * 2020-07-29 2020-11-03 成都洱威迪科商贸有限公司 一种三相桥式整流器

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103795272A (zh) * 2014-01-25 2014-05-14 嘉兴斯达半导体股份有限公司 一种三相整流桥功率模块
CN106449586A (zh) * 2016-08-05 2017-02-22 苏州固锝电子股份有限公司 大功率整流桥结构
CN109494210A (zh) * 2018-12-25 2019-03-19 山东晶导微电子股份有限公司 一种半桥封装结构
CN111884528A (zh) * 2020-07-29 2020-11-03 成都洱威迪科商贸有限公司 一种三相桥式整流器
CN111884528B (zh) * 2020-07-29 2021-09-07 嘉兴欣晟电机股份有限公司 一种三相桥式整流器

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