CN110867419A - 一种全桥功率模块 - Google Patents
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Abstract
一种全桥功率模块,主要包括注塑外壳及设置在注塑外壳内的功率模块主体,所述功率模块主体包括散热基板、电路模块以及固定电路模块的支架;所述电路模块包括绝缘陶瓷基板、IGBT芯片、二极管芯片、功率端子及信号端子,且电路模块的各元件通过全桥电路连接,所述绝缘陶瓷基板固定设置在散热基板上,所述IGBT芯片及二极管芯片固定设置在所述绝缘陶瓷基板上,且所述IGBT芯片、二极管芯片、绝缘陶瓷基板之间通过铝线相互连接,所述功率端子及信号端子的底部分别穿过所述支架与绝缘陶瓷基板固定连接,功率端子及信号端子的顶部分别穿过注塑外壳上穿设的通孔并向注塑外壳的外侧延伸。
Description
技术领域
本发明属于电力电子学领域,涉及一种功率模块,具体涉及一种全桥功率模块。
背景技术
功率半导体模块主要应用于电能转换的应用场合,如:电机驱动、电源、输变电等,功率半导体模块包括:IGBT(绝缘栅双极型晶体管)、功率MOSFET(场效应晶体管)、晶闸管以及功率二极管等,功率半导体模块是将以上功率半导体芯片封装成各种电路基本单元,应用于电力电子系统功率回路。目前电力电子行业有采用45mm宽度封装结构的功率模板,不过都是3个功率端子,模块内部集成的电路结构主要为半桥电路、斩波电路等,这种封装无法制作全桥电路。
然而很多应用背景例如焊机行业需要使用H桥电路结构。目前比较通用的方式是使用分立器件搭建成H桥的电路结构,或者使用两个半桥的功率模块搭建成H桥的电路结构,这种搭建的方式不仅成本高、方案复杂,同时搭建后的系统整体杂散电感无法做到最优化。
发明内容
本发明要解决的技术问题在于,针对现有技术的上述缺陷,提供一种结构简单、占用面积小、杂散电感低的全桥功率模块。
本发明的目的是通过如下技术方案来完成的,一种全桥功率模块,主要包括注塑外壳及设置在注塑外壳内的功率模块主体,所述功率模块主体包括散热基板、电路模块以及固定电路模块的支架;所述电路模块包括绝缘陶瓷基板、IGBT芯片、二极管芯片、功率端子及信号端子,且电路模块的各元件通过全桥电路连接,所述绝缘陶瓷基板固定设置在散热基板上,所述IGBT芯片及二极管芯片固定设置在所述绝缘陶瓷基板上,且所述IGBT芯片、二极管芯片、绝缘陶瓷基板之间通过铝线相互连接,所述功率端子及信号端子的底部分别穿过所述支架与绝缘陶瓷基板固定连接,功率端子及信号端子的顶部分别穿过注塑外壳上穿设的通孔并向注塑外壳的外侧延伸。
进一步地,所述注塑外壳的顶部外表面上设置有外凸部,外凸部上设置有4个大小相同的凸块,相邻凸块之间的间隔为5-10mm,且每个所述凸块上均穿设有供功率端子的顶部穿过的通孔,所述功率端子露出在注塑外壳的部分设置有带安装孔的弯折边,所述注塑外壳对应于弯折边上安装孔的位置嵌设有安装螺母。
进一步地,所述功率端子的底部一体设置有U形缓冲边,U形缓冲边远离功率端子的一侧设置有固定边,所述功率端子通过U形缓冲边的固定边与所述绝缘陶瓷基板固定连接。
进一步地,所述电路模块内设置有2块绝缘陶瓷基板,且每块所述绝缘陶瓷基板均包括Al2O3或AlN陶瓷层材料制成的中间层及设置在中间层上下两侧的无氧铜层。
进一步地,所述绝缘陶瓷基板通过高温回流焊接到所述散热基板上,所述IGBT芯片及二极管芯片通过高温回流焊接到所述绝缘陶瓷基板上。
进一步地,所述注塑外壳通过环氧密封胶与所述散热基板的外侧部分粘结在一起,所述功率模块主体与注塑外壳的相对空间内灌装有硅凝胶。
本发明的有益技术效果在于:本发明可以在宽度为45—55mm封装的功率模块中,制作全桥电路,相较于目前使用分立器件搭建成H桥的电路结构,或者使用两个半桥的功率模块搭建成H桥的电路结构,安装方便快捷、占用面积小、杂散电感低、成本便宜等优势。
附图说明
图1为本发明所述全桥功率模块的整体结构示意图;
图2为本发明所述全桥功率模块的内部结构示意图;
图3为本发明所述全桥功率模块的电路原理图;
图4为本发明所述的功率端子的结构示意图。
具体实施方式
为使本领域的普通技术人员更加清楚地理解本发明的目的、技术方案和优点,以下结合附图和实施例对本发明做进一步的阐述。
如图1-4所示,本发明所述的一种全桥功率模块,主要包括注塑外壳1及设置在注塑外壳1内的功率模块主体,所述功率模块主体包括散热基板4、电路模块以及固定电路模块的支架5;所述电路模块包括绝缘陶瓷基板8、IGBT芯片6、二极管芯片7、功率端子3及信号端子2,且电路模块的各元件通过全桥电路连接,所述绝缘陶瓷基板8固定设置在散热基板上4,所述IGBT芯片6及二极管芯片7固定设置在所述绝缘陶瓷基板8上,且所述IGBT芯片6、二极管芯片7、绝缘陶瓷基板8之间通过铝线相互连接,所述功率端子3及信号端子2的底部分别穿过所述支架5与绝缘陶瓷基板8固定连接,功率端子3及信号端子2的顶部分别穿过注塑外壳1上穿设的通孔并向注塑外壳1的外侧延伸。所述信号端子2和绝缘陶瓷基板8之间通过信号引线连接,所述绝缘陶瓷基板8上焊接有信号引线,信号引线另一端焊接在对应的信号端子2上并引出到电路模块外部。
参照图1所示,所述注塑外壳1的顶部外表面上设置有外凸部9,外凸部9上设置有4个大小相同的凸块10,相邻凸块10之间的间隔为5-10mm,最佳宽度为7mm,且每个所述凸块10上均穿设有供功率端子3的顶部穿过的通孔,所述功率端子3露出在注塑外壳1的部分设置有带安装孔的弯折边,所述注塑外壳1对应于弯折边上安装孔的位置嵌设有安装螺母,这样可以将外部电路与该功率端子通过螺丝紧固的方式连接在一起。
参照图4所示,所述功率端子3的底部一体设置有U形缓冲边11,U形缓冲边11远离功率端子3的一侧设置有固定边12,所述功率端子3通过U形缓冲边11的固定边12与所述绝缘陶瓷基板8固定连接,U形缓冲边11有利于底部焊接部位的缓冲,有效避免了外界在安装等过程中所施加的力传递到功率端子的焊接部位,影响功率端子3的可靠性。
参照图2所示,所述电路模块内设置有2块绝缘陶瓷基板8,且每块所述绝缘陶瓷基板8均包括Al2O3或AlN陶瓷层材料制成的中间层及设置在中间层上下两侧的无氧铜层。
参照图2所示,所述绝缘陶瓷基板8通过高温回流焊接到所述散热基板4上,所述IGBT芯片6及二极管芯片7通过高温回流焊接到所述绝缘陶瓷基板8上。
参照图1所示,所述注塑外壳1通过环氧密封胶与所述散热基板4的外侧部分粘结在一起,所述功率模块主体与注塑外壳1的相对空间内灌装有硅凝胶,硅凝胶固化后对模块内部的功率芯片提供保护作用,可有效避免来自外界环境的污染。
本文中所描述的具体实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,但凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (6)
1.一种全桥功率模块,主要包括注塑外壳及设置在注塑外壳内的功率模块主体,其特征在于:所述功率模块主体包括散热基板、电路模块以及固定电路模块的支架;所述电路模块包括绝缘陶瓷基板、IGBT芯片、二极管芯片、功率端子及信号端子,且电路模块的各元件通过全桥电路连接,所述绝缘陶瓷基板固定设置在散热基板上,所述IGBT芯片及二极管芯片固定设置在所述绝缘陶瓷基板上,且所述IGBT芯片、二极管芯片、绝缘陶瓷基板之间通过铝线相互连接,所述功率端子及信号端子的底部分别穿过所述支架与绝缘陶瓷基板固定连接,功率端子及信号端子的顶部分别穿过注塑外壳上穿设的通孔并向注塑外壳的外侧延伸。
2.根据权利要求1所述的全桥功率模块,其特征在于:所述注塑外壳宽度为45-55mm,所述注塑外壳的顶部外表面上设置有外凸部,外凸部上设置有4个大小相同的凸块,相邻凸块之间的间隔为5-10mm,且每个所述凸块上均穿设有供功率端子的顶部穿过的通孔,所述功率端子露出在注塑外壳的部分设置有带安装孔的弯折边,所述注塑外壳对应于弯折边上安装孔的位置嵌设有安装螺母。
3.根据权利要求1或2所述的全桥功率模块,其特征在于:所述功率端子的底部一体设置有U形缓冲边,U形缓冲边远离功率端子的一侧设置有固定边,所述功率端子通过U形缓冲边的固定边与所述绝缘陶瓷基板固定连接。
4.根据权利要求3所述的全桥功率模块,其特征在于:所述电路模块内设置有2块绝缘陶瓷基板,且每块所述绝缘陶瓷基板均包括Al2O3或AlN陶瓷层材料制成的中间层及设置在中间层上下两侧的无氧铜层。
5.根据权利要求4所述的全桥功率模块,其特征在于:所述绝缘陶瓷基板通过高温回流焊接到所述散热基板上,所述IGBT芯片及二极管芯片通过高温回流焊接到所述绝缘陶瓷基板上。
6.根据权利要求5所述的全桥功率模块,其特征在于:所述注塑外壳通过环氧密封胶与所述散热基板的外侧部分粘结在一起,所述功率模块主体与注塑外壳的相对空间内灌装有硅凝胶。
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EP4243070A1 (en) | 2022-03-11 | 2023-09-13 | Hitachi Energy Switzerland AG | Power module and method for manufacturing a power module |
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WO2023170268A1 (en) | 2022-03-11 | 2023-09-14 | Hitachi Energy Switzerland Ag | Power module and method for manufacturing a power module |
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