WO2019085442A1 - 高强度整流桥器件 - Google Patents

高强度整流桥器件 Download PDF

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Publication number
WO2019085442A1
WO2019085442A1 PCT/CN2018/087757 CN2018087757W WO2019085442A1 WO 2019085442 A1 WO2019085442 A1 WO 2019085442A1 CN 2018087757 W CN2018087757 W CN 2018087757W WO 2019085442 A1 WO2019085442 A1 WO 2019085442A1
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shaped
input pin
pin
chip
connecting piece
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PCT/CN2018/087757
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English (en)
French (fr)
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何洪运
程琳
刘玉龙
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苏州固锝电子股份有限公司
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Publication of WO2019085442A1 publication Critical patent/WO2019085442A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the utility model relates to a rectifying semiconductor device, in particular to a high-strength rectifier bridge device.
  • the rectifier bridge device is a bridge structure composed of four rectifier diodes, which uses the unidirectional conduction characteristics of the diode to rectify the alternating current. Since the bridge rectifier uses the input sine wave twice as efficiently as the wave rectification, it is A significant improvement in diode half-wave rectification is widely used in circuits where AC power is converted to DC.
  • the structure of the existing rectifier bridge device is limited by the spatial layout, and it is not possible to package a chip of a larger size of 60 mil or more, which cannot meet the requirements of miniaturization of the terminal product, and the product structure stress is large, and it is not suitable for packaging a large-sized chip of 60 mil or more, and the thickness of the product is large. Can not meet the needs of the compact design of the terminal products, the production process determined by the product structure is not high precision.
  • the object of the present invention is to provide a high-intensity rectifier bridge device which increases the external lead area and increases the epoxy strength of the body edge, increases the strength of the edge epoxy, and reduces structural stress and reduces The effect of internal structure impact on the epoxy injection process.
  • a high-strength rectifier bridge device comprising: first, second, third, fourth diode chips covered by an epoxy package and exposed a first Z-shaped input pin, a second Z-shaped input pin, an L-shaped positive input pin, and an L-shaped negative output pin of the epoxy package;
  • the anodes of the first and second diode chips are electrically connected to the upper surface of the L-shaped positive input pin, and the negative electrodes of the third and fourth diode chips are electrically connected to the upper surface of the L-shaped negative output pin, first The anode of the diode chip and the anode of the fourth diode chip are electrically connected to the first Z-shaped input pin through the first connecting piece, and the anode of the second diode chip and the anode of the third diode chip are both Electrically connected to the second Z-shaped input pin through the second connecting piece;
  • the L-shaped positive input pin and the L-shaped negative output pin are respectively composed of a chip support region, a DC output pin portion, and a second bent portion between the chip support region and the DC output pin portion;
  • a first semi-circular hole is defined in each of the first connecting piece and the second connecting piece at a center thereof, and the L-shaped positive input pin and the L-shaped negative output pin respectively have a first outer side of the chip supporting area a notch portion, a second notch portion is formed on both sides of the chip support region of the L-shaped positive input pin and the L-shaped negative output pin;
  • the L-shaped positive input pin and the L-shaped negative output pin respectively have a first through hole in a middle area of the chip supporting area, and the L-shaped positive input pin and the L-shaped negative output pin respectively have a chip supporting area close to the direct current
  • a second through hole is opened in one side of the output pin portion.
  • the first Z-shaped input pin and the second Z-shaped input pin are both a horizontal connection portion, a horizontal input pin portion, and a first position between the horizontal connection portion and the horizontal input pin portion.
  • the bend is composed.
  • the angle between the horizontal connecting portion and the first bent portion is 110 to 150 degrees.
  • the high-strength rectifier bridge device of the present invention has a first semi-circular hole on both sides of a center of each of the first connecting piece and the second connecting piece, the L-shaped positive input pin and the L-shaped negative output pin A first notch portion is opened on the outer side of each chip support region, and a second notch portion is opened on both sides of the chip support region of the L-shaped positive input pin and the L-shaped negative output pin, and the external pin is added.
  • the area and increased epoxy strength of the body edge increase the strength of the edge epoxy and reduce structural stress and reduce the impact on the internal structure during the epoxy injection process.
  • the high-strength rectifier bridge device of the utility model realizes the design requirement of packaging a larger chip size in a smaller product size by optimizing the product structure, and the maximum chip size is increased from 60 mils to 88 mils, and the large size is solved.
  • the structural stress caused by the chip has reduced the thickness of the product to about 40%, and the process efficiency has more than doubled.
  • FIG. 1 is a schematic structural view of a high-intensity rectifier bridge device of the present invention
  • Figure 2 is a schematic cross-sectional view of Figure 1.
  • Embodiment 1 A high-intensity rectifier bridge device comprising: first, second, third, and fourth diode chips 2, 3, 4, and 5 covered by an epoxy package 1 and an exposed epoxy a first Z-shaped input pin 6, a second Z-shaped input pin 7, an L-shaped positive input pin 8 and an L-shaped negative output pin 9 of the package 1;
  • the positive poles of the first and second diode chips 2, 3 are electrically connected to the upper surface of the L-shaped positive input pin 8, and the negative electrodes of the third and fourth diode chips 4, 5 and the L-shaped negative output pin. 9
  • the upper surface is electrically connected.
  • the anode of the first diode chip 2 and the anode of the fourth diode chip 5 are electrically connected to the first Z-shaped input pin 6 through the first connecting piece 14
  • the negative electrode of 2 and the positive electrode of the third diode chip 5 are electrically connected to the second Z-shaped input pin 7 through the second connecting piece 15;
  • the L-shaped positive input pin 8 and the L-shaped negative output pin 9 are both a chip support region 111, a DC output pin portion 112, and a second bend between the chip support region 111 and the DC output pin portion 112. Department 113;
  • a first semi-circular hole 16 is defined in each of the first connecting piece 14 and the second connecting piece 15 at the center thereof, and the chip supporting area of the L-shaped positive input pin 8 and the L-shaped negative output pin 9 are respectively
  • a first notch portion 17 is opened on the outer side of the 111, and a second notch portion 18 is formed on both sides of the chip support region 111 of each of the L-shaped positive input pin 8 and the L-shaped negative output pin 9.
  • the first Z-shaped input pin 6 and the second Z-shaped input pin 7 are each a first fold between the horizontal connection portion 101, the horizontal input pin portion 102, and the horizontal connection portion 101 and the horizontal input pin portion 102.
  • the curved portion 103 is composed.
  • the angle between the horizontal connecting portion 101 and the first bent portion 103 is 130°.
  • Embodiment 2 A high-intensity rectifier bridge device comprising: first, second, third, and fourth diode chips 2, 3, 4, 5 and exposed epoxy covered by an epoxy package 1 a first Z-shaped input pin 6, a second Z-shaped input pin 7, an L-shaped positive input pin 8 and an L-shaped negative output pin 9 of the package 1;
  • the positive poles of the first and second diode chips 2, 3 are electrically connected to the upper surface of the L-shaped positive input pin 8, and the negative electrodes of the third and fourth diode chips 4, 5 and the L-shaped negative output pin. 9
  • the upper surface is electrically connected.
  • the anode of the first diode chip 2 and the anode of the fourth diode chip 5 are electrically connected to the first Z-shaped input pin 6 through the first connecting piece 14
  • the negative electrode of 2 and the positive electrode of the third diode chip 5 are electrically connected to the second Z-shaped input pin 7 through the second connecting piece 15;
  • the L-shaped positive input pin 8 and the L-shaped negative output pin 9 are both a chip support region 111, a DC output pin portion 112, and a second bend between the chip support region 111 and the DC output pin portion 112. Department 113;
  • a first semi-circular hole 16 is defined in each of the first connecting piece 14 and the second connecting piece 15 at the center thereof, and the chip supporting area of the L-shaped positive input pin 8 and the L-shaped negative output pin 9 are respectively
  • a first notch portion 17 is opened on the outer side of the 111, and a second notch portion 18 is formed on both sides of the chip support region 111 of each of the L-shaped positive input pin 8 and the L-shaped negative output pin 9.
  • the angle between the horizontal connecting portion 101 and the first bent portion 103 is 115°.
  • the above high-strength rectifier bridge device When the above high-strength rectifier bridge device is used, it increases the external lead area and increases the epoxy strength of the body edge, increases the strength of the edge epoxy and reduces the structural stress and reduces the impact on the internal structure during the epoxy injection process.
  • the role of force again, through the optimized product structure, the design requirements for packaging larger chip sizes in a smaller product form factor, the maximum chip size increased from 60mil to 88mil, solving the structure brought by the large chip
  • the stress problem has reduced the thickness of the product to about 40%, and the process efficiency has more than doubled.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Rectifiers (AREA)

Abstract

本实用新型公开一种高强度整流桥器件，其第一、第二二极管芯片各自的正极与L形正极输入引脚上表面电连接，第三、第四二极管芯片各自的负极与L形负极输出引脚上表面电连接，第一二极管芯片的负极、第四二极管芯片的正极均通过第一连接片与第一Z形输入引脚电连接，第二二极管芯片的负极、第三二极管芯片的正极均通过第二连接片与第二Z形输入引脚电连接；所述第一连接片、第二连接片各自的中心处两侧均开有一第一半圆孔，所述L形正极输入引脚和L形负极输出引脚各自的芯片支撑区外侧均开有一第一缺口部，所述L形正极输入引脚和L形负极输出引脚各自的芯片支撑区中间处两侧均开有一第二缺口部。本实用新型增加外部引脚面积和增加本体边缘环氧强度的作用，增加了边缘环氧的强度和减小结构应力和减小环氧注胶过程中对内部结构冲击力的作用。

Description

高强度整流桥器件 技术领域
本实用新型涉及一种整流半导体器件，尤其涉及一种高强度整流桥器件。
背景技术
整流桥器件是由四个整流二极管组成的一个桥式结构，它利用二极管的单向导电特性对交流电进行整流，由于桥式整流器对输入正正弦波的利用效率比波整流高一倍，是对二极管半波整流的一种显著改进，故被广泛应用于交流电转换成直流电的电路中。
现有整流桥器件结构受空间布局限制，不能封装60mil以上更大尺寸的芯片，无法满足终端产品小型化的需求，产品结构应力较大，不适合封装60mil以上大尺寸芯片，产品厚度通大，不能满足终端产品紧凑化设计的需求，由产品结构决定的生产工艺精度不高。
发明内容
本实用新型目的是提供一种高强度整流桥器件，该高强度整流桥器件增加外部引脚面积和增加本体边缘环氧强度的作用，增加了边缘环氧的强度和减小结构应力和减小环氧注胶过程中对内部结构冲击力的作用。
为达到上述目的，本实用新型采用的技术方案是：一种高强度整流桥器件，包括：由环氧封装体包覆的第一、第二、第三、第四二极管芯片和裸露出环氧封装体的第一Z形输入引脚、第二Z形输入引脚、L形正极输入引脚和L形负极输出引脚；
第一、第二二极管芯片各自的正极与L形正极输入引脚上表面电连接，第三、第四二极管芯片各自的负极与L形负极输出引脚上表面电连接，第一二极管芯片的负极、第四二极管芯片的正极均通过第一连接片与第一Z形输入引脚电连接，第二二极管芯片的负极、第三二极管芯片的正极均通过第二连接片与第二Z形输入引脚电连接；
所述L形正极输入引脚和L形负极输出引脚均由芯片支撑区、直流输出引 脚部和位于芯片支撑区、直流输出引脚部之间的第二折弯部组成；
所述第一连接片、第二连接片各自的中心处两侧均开有一第一半圆孔，所述L形正极输入引脚和L形负极输出引脚各自的芯片支撑区外侧均开有一第一缺口部，所述L形正极输入引脚和L形负极输出引脚各自的芯片支撑区中间处两侧均开有一第二缺口部；
所述L形正极输入引脚和L形负极输出引脚各自的芯片支撑区中间区域开有第一通孔，所述L形正极输入引脚和L形负极输出引脚各自芯片支撑区靠近直流输出引脚部的一侧开有第二通孔。
上述技术方案中进一步改进的方案如下：
1.上述方案中，所述第一Z形输入引脚、第二Z形输入引脚均由水平连接部、水平输入引脚部和位于水平连接部、水平输入引脚部之间的第一折弯部组成。
2.上述方案中，所述水平连接部与第一折弯部的夹角度数为110°～150°。
由于上述技术方案运用，本实用新型与现有技术相比具有下列优点和效果：
1.本实用新型高强度整流桥器件，其第一连接片、第二连接片各自的中心处两侧均开有一第一半圆孔，所述L形正极输入引脚和L形负极输出引脚各自的芯片支撑区外侧均开有一第一缺口部，所述L形正极输入引脚和L形负极输出引脚各自的芯片支撑区中间处两侧均开有一第二缺口部，增加外部引脚面积和增加本体边缘环氧强度的作用，增加了边缘环氧的强度和减小结构应力和减小环氧注胶过程中对内部结构冲击力的作用。
2.本实用新型高强度整流桥器件，其通过优化的产品结构，实现了在更小的产品外形尺寸中封装更大芯片尺寸的设计需求，最大芯片尺寸由60mil增加到88mil，解决了大尺寸芯片带来的结构应力问题，实现了产品厚度尺寸减小到原来的40％左右，工艺效率提升了1倍以上。
附图说明
附图1为本实用新型高强度整流桥器件结构示意图；
附图2为附图1的剖面结构示意图。
以上附图中：1、环氧封装体；2、第一二极管芯片；3、第二二极管芯片；4、第三二极管芯片；5、第四二极管芯片；6、第一Z形输入引脚；7、第二Z形输入引脚；8、L形正极输入引脚；9、L形负极输出引脚；101、水平连接部；102、水平输入引脚部；103、第一折弯部；111、芯片支撑区；112、直流输出引脚部；113、第二折弯部；14、第一连接片；15、第二连接片；16、第一半圆孔；17、第一缺口部；18、第二缺口部。
具体实施方式
下面结合附图及实施例对本实用新型作进一步描述：
实施例1：一种高强度整流桥器件，包括：由环氧封装体1包覆的第一、第二、第三、第四二极管芯片2、3、4、5和裸露出环氧封装体1的第一Z形输入引脚6、第二Z形输入引脚7、L形正极输入引脚8和L形负极输出引脚9；
第一、第二二极管芯片2、3各自的正极与L形正极输入引脚8上表面电连接，第三、第四二极管芯片4、5各自的负极与L形负极输出引脚9上表面电连接，第一二极管芯片2的负极、第四二极管芯片5的正极均通过第一连接片14与第一Z形输入引脚6电连接，第二二极管芯片2的负极、第三二极管芯片5的正极均通过第二连接片15与第二Z形输入引脚7电连接；
所述L形正极输入引脚8和L形负极输出引脚9均由芯片支撑区111、直流输出引脚部112和位于芯片支撑区111、直流输出引脚部112之间的第二折弯部113组成；
所述第一连接片14、第二连接片15各自的中心处两侧均开有一第一半圆孔16，所述L形正极输入引脚8和L形负极输出引脚9各自的芯片支撑区111外侧均开有一第一缺口部17，所述L形正极输入引脚8和L形负极输出引脚9各自的芯片支撑区111中间处两侧均开有一第二缺口部18。
上述第一Z形输入引脚6、第二Z形输入引脚7均由水平连接部101、水平输入引脚部102和位于水平连接部101、水平输入引脚部102之间的第一折弯部103组成。
上述水平连接部101与第一折弯部103的夹角度数为130°。
实施例2：一种高强度整流桥器件，包括：由环氧封装体1包覆的第一、第二、第三、第四二极管芯片2、3、4、5和裸露出环氧封装体1的第一Z形输入引脚6、第二Z形输入引脚7、L形正极输入引脚8和L形负极输出引脚9；
第一、第二二极管芯片2、3各自的正极与L形正极输入引脚8上表面电连接，第三、第四二极管芯片4、5各自的负极与L形负极输出引脚9上表面电连接，第一二极管芯片2的负极、第四二极管芯片5的正极均通过第一连接片14与第一Z形输入引脚6电连接，第二二极管芯片2的负极、第三二极管芯片5的正极均通过第二连接片15与第二Z形输入引脚7电连接；
所述L形正极输入引脚8和L形负极输出引脚9均由芯片支撑区111、直流输出引脚部112和位于芯片支撑区111、直流输出引脚部112之间的第二折弯部113组成；
所述第一连接片14、第二连接片15各自的中心处两侧均开有一第一半圆孔16，所述L形正极输入引脚8和L形负极输出引脚9各自的芯片支撑区111外侧均开有一第一缺口部17，所述L形正极输入引脚8和L形负极输出引脚9各自的芯片支撑区111中间处两侧均开有一第二缺口部18。
上述水平连接部101与第一折弯部103的夹角度数为115°。
采用上述高强度整流桥器件时，其增加外部引脚面积和增加本体边缘环氧强度的作用，增加了边缘环氧的强度和减小结构应力和减小环氧注胶过程中对内部结构冲击力的作用；再次，其通过优化的产品结构，实现了在更小的产品外形尺寸中封装更大芯片尺寸的设计需求，最大芯片尺寸由60mil增加到88mil，解决了大尺寸芯片带来的结构应力问题，实现了产品厚度尺寸减小到原来的40％左右，工艺效率提升了1倍以上。
上述实施例只为说明本实用新型的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本实用新型的内容并据以实施，并不能以此限制本实用新型的保护范围。凡根据本实用新型精神实质所作的等效变化或修饰，都应涵盖在本实用新型的保护范围之内。

Claims (3)

  1. 一种高强度整流桥器件，其特征在于：包括：由环氧封装体(1)包覆的第一、第二、第三、第四二极管芯片(2、3、4、5)和裸露出环氧封装体(1)的第一Z形输入引脚(6)、第二Z形输入引脚(7)、L形正极输入引脚(8)和L形负极输出引脚(9)；
    第一、第二二极管芯片(2、3)各自的正极与L形正极输入引脚(8)上表面电连接，第三、第四二极管芯片(4、5)各自的负极与L形负极输出引脚(9)上表面电连接，第一二极管芯片(2)的负极、第四二极管芯片(5)的正极均通过第一连接片(14)与第一Z形输入引脚(6)电连接，第二二极管芯片(2)的负极、第三二极管芯片(5)的正极均通过第二连接片(15)与第二Z形输入引脚(7)电连接；
    所述L形正极输入引脚(8)和L形负极输出引脚(9)均由芯片支撑区(111)、直流输出引脚部(112)和位于芯片支撑区(111)、直流输出引脚部(112)之间的第二折弯部(113)组成；
    所述第一连接片(14)、第二连接片(15)各自的中心处两侧均开有一第一半圆孔(16)，所述L形正极输入引脚(8)和L形负极输出引脚(9)各自的芯片支撑区(111)外侧均开有一第一缺口部(17)，所述L形正极输入引脚(8)和L形负极输出引脚(9)各自的芯片支撑区(111)中间处两侧均开有一第二缺口部(18)。
  2. 根据权利要求1所述的高强度整流桥器件，其特征在于：所述第一Z形输入引脚(6)、第二Z形输入引脚(7)均由水平连接部(101)、水平输入引脚部(102)和位于水平连接部(101)、水平输入引脚部(102)之间的第一折弯部(103)组成。
  3. 根据权利要求1或2所述的高强度整流桥器件，其特征在于：所述水平连接部(101)与第一折弯部(103)的夹角度数为110°～150°。
PCT/CN2018/087757 2017-10-31 2018-05-22 高强度整流桥器件 WO2019085442A1 (zh)

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